JPH10283685A - Method for recording and reproducing information and device therefor - Google Patents

Method for recording and reproducing information and device therefor

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Publication number
JPH10283685A
JPH10283685A JP9977197A JP9977197A JPH10283685A JP H10283685 A JPH10283685 A JP H10283685A JP 9977197 A JP9977197 A JP 9977197A JP 9977197 A JP9977197 A JP 9977197A JP H10283685 A JPH10283685 A JP H10283685A
Authority
JP
Japan
Prior art keywords
recording
recording medium
probe
reproducing
work function
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9977197A
Other languages
Japanese (ja)
Inventor
Junji Oyama
淳史 大山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP9977197A priority Critical patent/JPH10283685A/en
Publication of JPH10283685A publication Critical patent/JPH10283685A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To enable recording and reproducing in a high S/N ratio even at a low DC voltage by constituting the electrode layer of a recording medium and the electroconductive part of a recording and reproducing probe in combination of their different work functions and using either of them to be of its smaller work function at the recording time or to be of its larger work function at the reproducing time as a positive voltage respectively. SOLUTION: The recording medium 13 is formed by applying the thin film of a specific organic compound capable of emitting light with an impressed voltage on an electroconductive substrate 11 in a printing method, etc. The electroconductive probe 14 is covered with an electroconductive coat having a different material in work function from the material of the electrode substrate 11. At the time of recording, the smaller work function, for example, the electrode substrate 11 is regarded as the positive electrode, and the pulse voltage of a waveheight value of lower than the voltage of emitting light of the recording medium 13 is impressed upon the recording medium 13 to write information thereon. At the time of reproducing, the larger work function, for example, the electroconductive probe is regarded as the positive electrode, a DC voltage is impressed upon the recording medium 13 to perform the reproducing. An impressed DC voltage value at this time is set lower than a half of the voltage value required for light emission of the recording medium 13, thus enabling detection of a large current in a recording part.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、電圧印加により発
光する材料からなる記録媒体を用いた情報の記録再生方
法及び記録再生装置に関する。
[0001] 1. Field of the Invention [0002] The present invention relates to a method and apparatus for recording and reproducing information using a recording medium made of a material which emits light when a voltage is applied.

【0002】[0002]

【従来の技術】近年メモリ材料の用途は、コンピュータ
及びその関連機器、ビデオディスク、デジタルオーディ
オディスク等のエレクトロニクス産業の中枢をなすもの
であり、情報の記録再生は各種製品に応用されている。
現在においては勿論のこと今後においても、メモリに要
求されるのは、より一層(1)高密度で記録容量が大き
いこと、(2)記録再生の応答速度が速いこと、(3)
生産性が高く価格が安いこと、(4)消費電力が少ない
こと、等の仕様である。その中で最近、導体の表面原子
の電子構造を直接観察できる走査型トンネル顕微鏡(S
TM)が開発され[G.Binnig et al,P
hys.Rev.Lett.,49,57(198
2)]、これは面内方向の分解能が1Å以下程度でかつ
非破壊で試料表面の実空間像を観察できる特徴を有して
いることにより、広範囲な応用が期待されている。例え
ば上記のメモリー技術の観点から考えると分子オーダー
以下(nm)から原子オーダー(数Å)で情報の高密度
記録再生を行なうことが可能になる。実際、電子線・イ
オン線等の粒子線、或いはX線等の高エネルギー電磁波
及び可視・紫外光等のエネルギー線を用いて適当な記録
層の表面状態を変化させて記録しSTMで再生する方法
や、記録層として電圧電流のスイッチング特性に対して
メモリ効果を持つ材料からなる薄膜層を用いて、情報の
記録再生をSTMを用いて行なう方法等が提案されてい
る。
2. Description of the Related Art In recent years, memory materials are used at the center of the electronics industry such as computers and related equipment, video disks, digital audio disks, and the like, and information recording and reproduction are applied to various products.
At present and in the future, memories will be required to have (1) high density and large recording capacity, (2) fast response time for recording and reproduction, and (3) memory.
The specifications are high productivity and low price, and (4) low power consumption. Recently, a scanning tunneling microscope (S) that can directly observe the electronic structure of surface atoms of a conductor
TM) was developed [G. Binnig et al, P
hys. Rev .. Lett. , 49, 57 (198
2)], which has a feature that the resolution in the in-plane direction is about 1 ° or less and that it can observe a real space image of the sample surface in a non-destructive manner, so that it is expected to be widely applied. For example, from the viewpoint of the memory technology described above, it is possible to perform high-density recording and reproduction of information in a molecular order (nm) or less (nm) to an atomic order (several Å). Actually, a method of changing the surface state of an appropriate recording layer using a high energy electromagnetic wave such as an electron beam or an ion beam, or a high energy electromagnetic wave such as an X-ray, or an energy beam such as visible light or ultraviolet light, and recording and reproducing by an STM. Also, there has been proposed a method of recording and reproducing information using an STM using a thin film layer made of a material having a memory effect on switching characteristics of voltage and current as a recording layer.

【0003】また試料と先端径の小さな探針(プロー
ブ)間に働く原子間力を検出し試料表面の凹凸形状を観
察する手段として原子間力顕微鏡(AFM)が開発され
[G.Binnig et al,Phys.Rev.
Lett.,56,930(1986)]、観察試料が
導体のみならず絶縁体の場合でも表面形状の直接観察が
可能となっている。AFMによる分解能は試料面内方向
で1nm以下であるので、例えば試料表面に10nm程
度の間隔で微細な凹凸を形成し、それをAFMを用いて
読み出すことによって、1012ビット/cm2に近い高
密度メモリを作製することも可能である。
Further, an atomic force microscope (AFM) has been developed as a means for detecting an atomic force acting between a sample and a probe having a small tip diameter and observing the uneven shape of the sample surface [G. Binnig et al, Phys. Rev ..
Lett. , 56, 930 (1986)], enabling direct observation of the surface shape even when the observation sample is not only a conductor but also an insulator. Since the resolution by AFM is 1 nm or less in the in-plane direction of the sample, fine irregularities are formed at intervals of, for example, about 10 nm on the surface of the sample, and are read out by using the AFM to obtain a high resolution close to 10 12 bits / cm 2. It is also possible to make a density memory.

【0004】更に前記STMによる試料の導電性情報と
前記AFMによる試料面内の凹凸情報を同時に計測する
ことで、より厳密に試料の表面状態を観察する装置が開
示されている(特開平3−277903号公報、以下こ
れをAFM/STMという)。この装置は、導電性探針
(プローブ電極)を用い、該探針を試料表面に接近させ
た際に該探針と該試料表面との間に発生する原子間力に
よってもたらされるカンチレバーの変位を検出し(AF
M像)、同時に該探針と試料との間に電圧を加えて両者
間を流れる電流を検出(STM像)する装置である。従
って、例えばAFM像で試料の微小部分の凹凸を観察し
ながら該微小部分の導電性情報をSTM像によって同時
に得ることができる。その他、電圧パルスを印加するこ
とで記録層上に分子を捕捉し、選択的にデータビットを
記録し、またそれを再生し、消去を行なう方法、装置の
提案がある(特開平1−196751号公報)。
Further, there has been disclosed an apparatus for observing the surface state of a sample more strictly by simultaneously measuring the conductivity information of the sample by the STM and the unevenness information in the sample surface by the AFM (Japanese Unexamined Patent Application Publication No. Hei. 277903, hereinafter referred to as AFM / STM). This apparatus uses a conductive probe (probe electrode) to detect the displacement of a cantilever caused by an atomic force generated between the probe and the sample surface when the probe approaches the sample surface. Detection (AF
M image), and a device that simultaneously applies a voltage between the probe and the sample to detect a current flowing between the two (STM image). Therefore, for example, while observing the unevenness of the minute portion of the sample with the AFM image, the conductivity information of the minute portion can be simultaneously obtained by the STM image. In addition, there is a proposal of a method and an apparatus for capturing molecules on a recording layer by applying a voltage pulse, selectively recording data bits, and reproducing and erasing the data bits (Japanese Patent Laid-Open No. 1-196551). Gazette).

【0005】[0005]

【発明が解決しようとする課題】上記の記録再生方法に
おいて、例えば記録情報を再生する場合には記録媒体に
DC電圧を印加する必要があるが、該DC電圧印加は記
録媒体からの漏れ電流・記録媒体の損傷等を防ぐために
もなるべく低いDC電圧を印加することが好ましい。ま
た、記録情報を確実に再生するため、記録部分からの出
力信号と非記録部分(バックグラウンドも含めて)から
の出力信号の差をより大きくして、S/N比を一層向上
させることが望まれる。
In the above-mentioned recording / reproducing method, for example, when reproducing recorded information, it is necessary to apply a DC voltage to the recording medium. It is preferable to apply as low a DC voltage as possible to prevent damage to the recording medium and the like. Further, in order to reliably reproduce the recorded information, the difference between the output signal from the recorded portion and the output signal from the non-recorded portion (including the background) can be further increased to further improve the S / N ratio. desired.

【0006】そこで、本発明は、上記した課題を解決す
るため、低いDC電圧の印加のもとにおいても、記録部
分からの出力信号と非記録部分からの出力信号の差をよ
り大きくしてS/N比の一層の向上を図ることのできる
情報の記録再生方法及び記録再生装置を提供することを
目的としている。
In order to solve the above-mentioned problems, the present invention increases the difference between the output signal from the recording portion and the output signal from the non-recording portion even when a low DC voltage is applied, thereby increasing S It is an object of the present invention to provide an information recording / reproducing method and a recording / reproducing apparatus capable of further improving the / N ratio.

【0007】[0007]

【課題を解決するための手段】本発明は、上記課題を解
決するため、情報の記録再生方法及び記録再生装置をつ
ぎのように構成したことを特徴とするものである。すな
わち、本発明の情報の記録再生方法は、電極層上に電圧
印加により発光する有機化合物からなる記録媒体層が形
成された記録媒体と、該記録媒体層に導電部を有する探
針を近接させて記録再生を行う情報の記録再方法におい
て、該記録媒体の電極層と該探針の導電部とが仕事関数
の異なる組み合わせからなり、いずれか一方の仕事関数
の小さい方を正電圧として該記録媒体の任意の位置でパ
ルス電圧を印加して記録を行い、該記録された情報の再
生をいずれか一方の仕事関数の大きい方を正電圧として
行うことを特徴としている。また、本発明の情報の記録
再生装置は、電極層上に電圧印加により発光する有機化
合物からなる記録媒体層が形成された記録媒体と、該記
録媒体層に導電部を有する探針を近接させて記録再生を
行う情報の記録再生装置において、該記録媒体の電極層
と該探針の導電部とを仕事関数の異なる組み合わせによ
って構成したことを特徴としている。また、本発明の情
報の記録再生方法または装置は、前記有機化合物が高分
子化合物を含むことを特徴としている。また、本発明の
情報の記録再生方法または装置は、前記電極層もしくは
前記探針導電部のいずれか一方の仕事関数の大きい部分
に接合して、正孔輸送能の高い層を介在させたことを特
徴としている。また、本発明の情報の記録再生方法また
は装置は、前記電極層もしくは前記探針導電部のいずれ
か一方の仕事関数の小さい部分に接合して、電子輸送能
の高い層を介在させたことを特徴としている。また、本
発明の情報の記録再生方法または装置は、前記電極層も
しくは前記探針導電部のいずれか一方の仕事関数の大き
い部分に接合して正孔輸送能の高い層を介在させ、同時
に、前記電極層もしくは前記探針導電部のいずれか一方
の仕事関数の小さい部分に接合して電子輸送能の高い層
を介在させたことを特徴としている。
In order to solve the above-mentioned problems, the present invention is characterized in that an information recording / reproducing method and a recording / reproducing apparatus are configured as follows. That is, in the information recording / reproducing method of the present invention, a recording medium in which a recording medium layer made of an organic compound emitting light by voltage application is formed on an electrode layer, and a probe having a conductive portion in the recording medium layer are brought close to each other. In the method of recording / reproducing information for recording / reproducing, the electrode layer of the recording medium and the conductive portion of the probe are formed of different combinations of work functions, and one of the work functions having a smaller work function is set as a positive voltage and the recording is performed. Recording is performed by applying a pulse voltage at an arbitrary position on the medium, and the recorded information is reproduced by using one of the larger work functions as a positive voltage. Further, the information recording / reproducing apparatus of the present invention brings a recording medium in which a recording medium layer made of an organic compound which emits light by voltage application on an electrode layer and a probe having a conductive portion close to the recording medium layer close to each other. In an information recording / reproducing apparatus for recording / reproducing information, the electrode layer of the recording medium and the conductive portion of the probe are configured by different combinations of work functions. Further, the information recording method and apparatus of the present invention is characterized in that the organic compound includes a polymer compound. Further, in the information recording / reproducing method or apparatus according to the present invention, the information recording / reproducing method is preferably such that a layer having a high hole-transporting property is interposed between the electrode layer and the probe conductive portion in a portion having a large work function. It is characterized by. Further, the information recording / reproducing method or apparatus of the present invention is characterized in that a layer having a high electron transporting ability is interposed by bonding to a portion having a small work function of either the electrode layer or the probe conductive portion. Features. Further, the information recording and reproducing method or apparatus of the present invention is a method for bonding to a portion having a large work function of any one of the electrode layer or the probe conductive portion, intervening a layer having a high hole transporting ability, It is characterized in that a layer having a high electron transporting ability is interposed by being joined to a portion having a small work function of either the electrode layer or the probe conductive portion.

【0008】[0008]

【発明の実施の形態】本発明は、上記したように記録媒
体の電極層と探針の導電部とを、仕事関数の異なる組み
合わせにより構成し、いずれか一方の仕事関数の小さい
方を正電圧として該記録媒体の任意の位置でパルス電圧
を印加して記録を行い、該記録された情報の再生をいず
れか一方の仕事関数の大きい方を正電圧として行うこと
によって、記録情報の再生に際して、非記録部分(バッ
クグラウンドも含めて)からの出力信号と記録部分から
の出力信号とがクロストークすることなく記録信号を再
生することができ、S/N比の向上を図ることが可能と
なる。また、このような本発明の構成によると、記録情
報を再生する場合のDC電圧は、記録媒体の発光に必要
な電圧値の半分以下の低電圧の印加で、例えば、2Vの
ような低電圧の印加で記録情報の再生を行うことがで
き、システムの消費電力の低減化を図ることが可能とな
る。
According to the present invention, as described above, the electrode layer of the recording medium and the conductive portion of the probe are constituted by combinations having different work functions, and one of the work functions having the smaller work function is determined by the positive voltage. By applying a pulse voltage at an arbitrary position on the recording medium to perform recording, and by performing the reproduction of the recorded information as a positive voltage of one of the larger work functions, when reproducing the recorded information, The recorded signal can be reproduced without crosstalk between the output signal from the non-recorded portion (including the background) and the output signal from the recorded portion, and the S / N ratio can be improved. . According to the configuration of the present invention, the DC voltage for reproducing the recorded information is set to a low voltage such as 2 V by applying a low voltage that is half or less of a voltage value necessary for light emission of the recording medium. , The recorded information can be reproduced, and the power consumption of the system can be reduced.

【0009】つぎに、本発明の内容を図に基づいて更に
詳細に説明する。図1aは本発明の記録再生方法を表わ
す一例である。10はガラス・石英・非ドープ型シリコ
ンウエハ等の絶縁性基板である。11はその上に記録媒
体13を直接に形成するための電極基板であり、該基板
はその表面が導電性であり平滑なものであればどのよう
な材料を用いてもよく、例えば金、白金、銀、銅、パラ
ジウム、アルミニウム、インジウム、タングステン、ス
ズ、鉛などの金属もしくはこれらの合金、更にはグラフ
ァイトやシリサイド、またさらにはITO等の導電性酸
化物、nまたはp−ドープシリコン等数多くの材料が挙
げられる。該基板11の一部に上記と同様の導電性材料
からなる引き出し電極12を形成しておき、後述のよう
に記録媒体13に電圧を印加できるようにする。上記1
1及び12の作製方法としては真空蒸着法、スパッタリ
ング法、印刷法などを用いることができる。なお、該基
板11表面に必要に応じてその表面を一様に疎水性もし
くは親水性を付与する。方法は特に限定しないが、上記
に掲げた導電性基板11の種類によって最適な方法を選
択することが好ましい。疎水性付与の場合、例えば貴金
属や金属酸化物材料に対しては該基板表面を適当な方法
で洗浄した後に後述のラングミュア・ブロジェット(以
下LB)法により脂肪酸もしくはその誘導体などの両親
媒性物質を積層することで達成される。特に金の場合、
チオール基やアミノ基を末端に有する炭化水素化合物と
反応させることも可能である。またシリコンを用いる場
合、該基板表面を適当な方法で洗浄した後に上記のLB
法で両親媒性物質またはフッ化水素酸もしくは同塩を含
む溶液で処理する、もしくは前記洗浄後にシランカップ
リング剤で処理する方法等がある。親水性付与の場合、
オゾンアッシング処理・クロム酸混液浸漬等を行う。
Next, the contents of the present invention will be described in more detail with reference to the drawings. FIG. 1a is an example showing the recording / reproducing method of the present invention. Reference numeral 10 denotes an insulating substrate such as a glass / quartz / undoped silicon wafer. Reference numeral 11 denotes an electrode substrate for directly forming the recording medium 13 thereon. The substrate may be made of any material as long as its surface is conductive and smooth. Metals such as silver, copper, palladium, aluminum, indium, tungsten, tin, lead or alloys thereof; furthermore, graphite or silicide, or even conductive oxides such as ITO, n- or p-doped silicon, etc. Materials. A lead electrode 12 made of the same conductive material as described above is formed on a part of the substrate 11 so that a voltage can be applied to the recording medium 13 as described later. 1 above
As a manufacturing method of 1 and 12, a vacuum evaporation method, a sputtering method, a printing method, or the like can be used. In addition, the surface of the substrate 11 is provided with hydrophobicity or hydrophilicity as required evenly. The method is not particularly limited, but it is preferable to select an optimal method according to the type of the conductive substrate 11 listed above. In the case of imparting hydrophobicity, for example, for a noble metal or metal oxide material, the substrate surface is washed by an appropriate method, and then an amphiphilic substance such as a fatty acid or a derivative thereof is obtained by a Langmuir-Blodgett (LB) method described later. It is achieved by laminating. Especially for gold,
It is also possible to react with a hydrocarbon compound having a thiol group or an amino group at the terminal. When silicon is used, the above LB is used after cleaning the substrate surface by an appropriate method.
There is a method of treating with an amphiphilic substance or a solution containing hydrofluoric acid or the same salt by a method, or treating with a silane coupling agent after the washing. In the case of imparting hydrophilicity,
Ozone ashing, chromic acid mixed solution immersion, etc. are performed.

【0010】該基板11上に記録媒体13として電圧印
加により発光する有機化合物を薄膜として塗布する。本
来、該記録媒体13の材料は電圧印加により発光する有
機化合物であればその種類を特に制限をしないが、後述
の薄膜化の際に該薄腹が上記電極形状の端面で断裂した
り、該薄膜中にピンホール等の欠陥が生じにくいよう高
分子化合物を使用するのが好ましい。例えば[J.Ch
em.Soc.,Chem.Commun.,101
4,1988]に開示されているところのポリ(p−フ
ェニレンビニレン)をはじめ、溶媒に可溶な各種高分子
化合物[Appl.Phys.Lett.,58,19
82(1991)、Macromol.Chem.Ph
ys.,195,1933(1994)]を用いること
もできる。塗布法は該材料の溶液または混合液を使用し
て印刷法、スピンコーティング法、キャスティング法、
ディッピング法、バーコート法、ロールコート法、LB
法等を用いることが出来る。LB法は、得られる累積膜
の均一性が高く、また膜厚を1分子のオーダーで制御で
きるという特徴があり、さらに単位面積当たりの材料密
度が高く、かつ均一であり、累積膜作成時の条件が温和
であって、公知の方法もしくは装置を使用することがで
き特別な改造を必要としない等の特徴がある。前記記録
媒体13の膜厚としては1nm〜1μmが好ましく、さ
らに好ましくは1〜500nmである。また、前記引き
出し部12等、薄膜が不要の部分は溶剤で拭き取る等の
処理をしておく。
On the substrate 11, an organic compound which emits light when a voltage is applied as a recording medium 13 is applied as a thin film. Originally, the material of the recording medium 13 is not particularly limited as long as it is an organic compound that emits light when a voltage is applied, but the thin layer breaks at the end face of the electrode shape, or It is preferable to use a polymer compound so that defects such as pinholes do not easily occur in the thin film. For example, [J. Ch
em. Soc. Chem. Commun. , 101
4,1988], and various polymer compounds soluble in a solvent [Appl. Phys. Lett. , 58 , 19
82 (1991), Macromol. Chem. Ph
ys. , 195 , 1933 (1994)]. The coating method is a printing method, a spin coating method, a casting method using a solution or a mixed solution of the material,
Dipping method, bar coating method, roll coating method, LB
Method or the like can be used. The LB method is characterized in that the obtained accumulated film has high uniformity, and that the film thickness can be controlled on the order of one molecule. Further, the material density per unit area is high and uniform. The conditions are mild, a known method or apparatus can be used, and no special modification is required. The thickness of the recording medium 13 is preferably 1 nm to 1 μm, more preferably 1 to 500 nm. In addition, a portion where the thin film is unnecessary such as the drawer portion 12 is subjected to processing such as wiping with a solvent.

【0011】図1aにおいて導電性を有する探針14
は、蒸着・スパッタリング等の方法で導電性被覆15を
形成するが、該導電性被覆15は上記の電極基板11に
用いる材料の仕事関数と異なる値の仕事関数を有する材
料を用いる。即ち前記電極基板11にITO、Pt、A
uの如く仕事関数の大きな材料を用いた場合、該導電性
材料は仕事関数の小さなAl、Mg、Ag等の材料を単
独もしくは混合して用いることが好ましい。また、前記
電極基板に仕事関数の小さな前記材料を用いた場合は前
記探針を被覆する導電性材料は仕事関数の大きな前記材
料を用いることが好ましい。次に前記記録媒体13表面
に前記導電性探針14を近接させる。該近接の方法は金
属の探針(プローブ電極)を、該探針と導電性物質との
間に流れるトンネル電流をモニターしながら走査して実
空間の表面構造を描くことができる走査型トンネル顕微
鏡(STM、前出のG.Binnig et al,1
982)、試料と探針間に働く原子間力を検出して試料
表面の形状を観察する原子間力顕微鏡(AFM、前出の
Binnig et al,1986)、またそれらの
複合装置(AFM/STM、特開平3−277903号
公報)等の原理を直接応用することでナノメーターオー
ダーの位置分解能が得られる。
In FIG. 1a, a conductive probe 14 is shown.
Forms a conductive coating 15 by a method such as vapor deposition and sputtering. The conductive coating 15 is formed of a material having a work function different from the work function of the material used for the electrode substrate 11. That is, ITO, Pt, A
When a material having a large work function such as u is used, it is preferable to use a material having a small work function, such as Al, Mg, or Ag, alone or as a mixture. Further, when the material having a small work function is used for the electrode substrate, it is preferable to use the material having a large work function as the conductive material covering the probe. Next, the conductive probe 14 is brought close to the surface of the recording medium 13. The proximity method scans a metal probe (probe electrode) while monitoring a tunnel current flowing between the probe and a conductive substance, and can draw a surface structure in a real space. (STM, G. Binnig et al, 1 supra.
982), an atomic force microscope (AFM, Binnig et al., 1986, supra) for observing the shape of the sample surface by detecting the atomic force acting between the sample and the probe, and a composite device (AFM / STM) The direct application of the principle such as that described in Japanese Patent Application Laid-Open No. 3-277903) can provide a positional resolution on the order of nanometers.

【0012】引き続き、該導電性探針14を通じ記録媒
体13上の任意の位置においてパルス電圧を印加する。
この際、例えば前記電極11の仕事関数が前記導電性探
針14の仕事関数より大きい場合、仕事関数の小さい方
を+として該記録媒体13に電圧を印加する。その電圧
値は例えば該記録媒体13の発光電圧と同等もしくはそ
の半分程度の波高値でよい。以上の操作により該電圧印
加部分で該探針先端の直径10nm以下程度の範囲で導
通状態となり情報が書き込まれることになる(記録、図
1の16)。引き続き前記探針13をx及びy方向に試
料表面で走査し、同様の電圧印加を行う。このように、
該パルス電圧印加を適当な領域で行った後、今度は前記
電極11の材料と該導電性探針14の導電部とで仕事関
数の大きい方を+として該記録媒体13にDC電圧を印
加し、出力電流を検出しながら該領域を再走査する。そ
の際のDC印加電圧値は前記記録媒体13の発光に必要
な電圧値の半分以下でよい。この時、前記パルス電圧を
印加した部分では大電流を検出するが、それ以外の記録
媒体部分では微少な電流が検出され、上記で情報記録さ
れた部分、すなわち図1において示された16の部分を
良好なS/N比によって検出し、再生を行うことができ
る。
Subsequently, a pulse voltage is applied to an arbitrary position on the recording medium 13 through the conductive probe 14.
At this time, for example, when the work function of the electrode 11 is larger than the work function of the conductive probe 14, a voltage is applied to the recording medium 13 with the smaller work function as +. The voltage value may be, for example, a peak value that is equal to or half the emission voltage of the recording medium 13. With the above operation, the voltage application portion becomes conductive in a range of about 10 nm or less in diameter of the tip of the probe, and information is written (recording, 16 in FIG. 1). Subsequently, the probe 13 is scanned on the sample surface in the x and y directions, and the same voltage is applied. in this way,
After the application of the pulse voltage is performed in an appropriate region, a DC voltage is applied to the recording medium 13 by setting the larger work function of the material of the electrode 11 and the conductive portion of the conductive probe 14 to +. The area is rescanned while detecting the output current. The DC applied voltage value at that time may be half or less of the voltage value required for light emission of the recording medium 13. At this time, a large current is detected in the portion where the pulse voltage is applied, but a small current is detected in other recording medium portions, and the portion where information is recorded as described above, that is, the portion 16 shown in FIG. Can be detected with a good S / N ratio, and reproduction can be performed.

【0013】次に、本発明の作製方法で作製した記録媒
体を用いる記録・再生装置を図5のブロック図を用いて
説明する。探針54の先端には導電性被覆56が施され
ている。該探針54の原点位置を、探針変位検出手段5
6を用いて設定する。測定したい原子間力の範囲を設定
するために、カンチレバー55の持つ既知のばね定数か
ら見積もった探針54の原点からの変位量を設定する。
この時の変位量が探針54と記録媒体53の間に作用す
る原子間力に相当する。次に記録媒体53と探針54の
間隔を近付けて測定を開始すると、探針54の先端と記
録媒体53表面との間で原子間力が生じ、この力によっ
てカンチレバー55全体がたわみにより変位する。即
ち、記録媒体53をxy方向に走査したときに探針変位
検出手段56(例えば「光てこ」法)からの出力信号及
び圧電アクチュエータ58に印加されるフィードバック
信号を走査信号に合わせて記録し、これらの信号に基づ
いて表面凹凸像(AFM像)をコンピュータ511を通
して表示装置510に表示する。この信号はサーボ制御
手段57にフィードバックされる。サーボ制御手段57
では設定した探針54の変位量を保つように3次元方向
に駆動自在な圧電アクチュエータ58にドライブ電圧が
印加されフィードバック動作を行なう。
Next, a recording / reproducing apparatus using a recording medium manufactured by the manufacturing method of the present invention will be described with reference to the block diagram of FIG. The tip of the probe 54 is provided with a conductive coating 56. The origin position of the probe 54 is determined by the probe displacement detecting means 5.
6 is set. In order to set the range of the atomic force to be measured, the amount of displacement of the probe 54 from the origin estimated from the known spring constant of the cantilever 55 is set.
The amount of displacement at this time corresponds to the atomic force acting between the probe 54 and the recording medium 53. Next, when the measurement is started with the distance between the recording medium 53 and the probe 54 approached, an atomic force is generated between the tip of the probe 54 and the surface of the recording medium 53, and this force causes the entire cantilever 55 to be displaced by bending. . That is, when the recording medium 53 is scanned in the xy directions, an output signal from the probe displacement detecting means 56 (for example, an “optical lever” method) and a feedback signal applied to the piezoelectric actuator 58 are recorded in accordance with the scanning signal. A surface unevenness image (AFM image) is displayed on the display device 510 through the computer 511 based on these signals. This signal is fed back to the servo control means 57. Servo control means 57
In, a drive voltage is applied to a piezoelectric actuator 58 that can be driven in a three-dimensional direction so as to maintain the set displacement amount of the probe, and a feedback operation is performed.

【0014】実際の記録再生は次のように実施される。
まず探針54を記録媒体53のxy面内を走査させる。
この際得られるAFM信号と同期してコンピュータ51
1より電圧印加電源512を通して記録媒体53上の任
意の位置においてパルス印加信号を出力し、記録媒体5
4上に情報を記録する。記録された情報を再生する場合
は、電圧印加電源512より探針54と導電性基板52
間にバイアスDC電圧を印加しながら記録動作を行なっ
た領域を走査し、前記の記録操作によって情報が記録さ
れた局所部分(記録ビット)の電流を探針54を通して
電流検出手段59により検出する。該検出された電流値
をコンピュータ511により探針54の位置情報とあわ
せて再構成し、微小出力を適宜カットオフして表示装置
510に前記AFM像と同時に表示される。
The actual recording / reproduction is performed as follows.
First, the probe 54 scans the xy plane of the recording medium 53.
The computer 51 synchronizes with the AFM signal obtained at this time.
1 to output a pulse application signal at an arbitrary position on the recording medium 53 through a voltage application power supply 512,
Record the information on 4. When reproducing the recorded information, the probe 54 and the conductive substrate 52 are supplied from the voltage application power supply 512.
The area where the recording operation has been performed is scanned while applying a bias DC voltage in between, and the current in the local portion (recording bit) where information has been recorded by the above-described recording operation is detected by the current detecting means 59 through the probe 54. The detected current value is reconstructed by the computer 511 in accordance with the position information of the probe 54, and the minute output is appropriately cut off and displayed on the display device 510 simultaneously with the AFM image.

【0015】本発明による記録媒体13には、例えば電
極21が探針24の導電部25に比較して大きな仕事関
数を有する場合、図2aの如く記録媒体23と電極21
との間に正孔輸送材料を含有する正孔輸送層27を設け
ることも可能である。また、電極21が探針24の導電
部25に比較して小さな仕事関数を有する場合、図2b
の如く該記録媒体23と該探針24との間に正孔輸送材
料を含有する正孔輸送層27を設けることも可能であ
る。更に、例えば電極31が探針34の導電部35に比
較して大きな仕事関数を有する場合、図3aの如く記録
媒体33と該探針34との間に電子輸送材料を含有する
電子輸送層37を設けることも可能である。また、前記
電極31が前記探針34の導電部35に比較して小さな
仕事関数を有する場合、図3bの如く該電極31と該記
録媒体33との間に電子輪送材料を含有する正孔輪送層
37を設けることも可能である。更に、例えば電極41
が探針44の導電部45に比較して大きな仕事関数を有
する場合、図4aの如く記録媒体43と電極41との間
に正孔輸送材料を含有する正孔輸送層47を設け、同時
に該記録媒体43と前記探針44との間に電子輸送材料
を含有する電子輸送層48を設けることも可能である。
また、前記電極41が前記探針44の導電部45に比較
して小さな仕事関数を有する場合、図4bの如く該電極
41と該記録媒体43との間に電子輪送材料を含有する
電子輸送層48を設け、同時に該記録媒体43と前記探
針44との間に正孔輪送材料を含有する正孔輸送層47
を設けることも可能である。
In the recording medium 13 according to the present invention, for example, when the electrode 21 has a larger work function than the conductive portion 25 of the probe 24, as shown in FIG.
It is also possible to provide a hole transport layer 27 containing a hole transport material between. When the electrode 21 has a smaller work function than the conductive part 25 of the probe 24, FIG.
As described above, a hole transport layer 27 containing a hole transport material can be provided between the recording medium 23 and the probe 24. Further, for example, when the electrode 31 has a large work function as compared with the conductive portion 35 of the probe 34, the electron transport layer 37 containing an electron transport material between the recording medium 33 and the probe 34 as shown in FIG. It is also possible to provide. When the electrode 31 has a smaller work function than the conductive portion 35 of the probe 34, a hole containing an electron transport material is provided between the electrode 31 and the recording medium 33 as shown in FIG. It is also possible to provide a transport layer 37. Further, for example, the electrode 41
Has a larger work function than the conductive portion 45 of the probe 44, a hole transport layer 47 containing a hole transport material is provided between the recording medium 43 and the electrode 41 as shown in FIG. An electron transport layer 48 containing an electron transport material can be provided between the recording medium 43 and the probe 44.
When the electrode 41 has a smaller work function than the conductive portion 45 of the probe 44, the electron transport containing an electron transport material between the electrode 41 and the recording medium 43 as shown in FIG. A hole transport layer 47 containing a hole transport material between the recording medium 43 and the probe 44 at the same time.
It is also possible to provide.

【0016】上記の電子輸送材料または正孔輸送材料と
しては公知のものが使用でき特に限定されないが、正孔
輸送材料の例としてピラゾリン誘導体、アリールアミン
誘導体、スチルベン誘導体、トリフェニルジアミン誘導
体等が挙げられる。また、電子輸送材料の例としてはオ
キサジアゾール誘導体、アントラキノジメタンおよびそ
の誘導体、ベンゾキノンおよびその誘導体、ナフトキノ
ンおよびその誘導体、アントラキノンおよびその誘導
体、テトラシアノアンスラキノジメタンおよびその誘導
体、フルオレノン誘導体、ジフェニルジシアノエチレン
およびその誘導体、ジフェノキノン誘導体、8−ヒドロ
キシキノリンおよびその誘導体の金属錯体等が挙げられ
る。これらは単独で用いてもよいし、2種類以上を混合
して用いてもよい。上記の正孔輸送層18および電子輸
送層19は該層材料の溶液または混合液を使用して印刷
法、スピンコーティング法、キャスティング法、ディッ
ピング法、バーコート法、ロールコート法、LB法等を
用いて形成することが出来る。
As the above-mentioned electron transporting material or hole transporting material, known materials can be used and are not particularly limited. Examples of the hole transporting material include pyrazoline derivatives, arylamine derivatives, stilbene derivatives, triphenyldiamine derivatives and the like. Can be Examples of the electron transporting material include oxadiazole derivatives, anthraquinodimethane and its derivatives, benzoquinone and its derivatives, naphthoquinone and its derivatives, anthraquinone and its derivatives, tetracyanoanthraquinodimethane and its derivatives, fluorenone derivatives, Examples include diphenyldicyanoethylene and its derivatives, diphenoquinone derivatives, and metal complexes of 8-hydroxyquinoline and its derivatives. These may be used alone or as a mixture of two or more. The hole transporting layer 18 and the electron transporting layer 19 are formed by using a solution or a mixed solution of the layer material, by a printing method, a spin coating method, a casting method, a dipping method, a bar coating method, a roll coating method, an LB method or the like. It can be formed using.

【0017】[0017]

【実施例】以下に、本発明の実施例について説明する
が、これらは本発明の範囲を何ら制限するものではな
い。 [実施例1]本発明の実施例1の基本構成を図1に示
す。本実施例で用いる基板を以下の処方で作成した。基
板10として厚さ0.5mmの非ドープ型シリコンウエ
ハを用い、該基板10にAu/Crを1000Åの厚さ
でパターン蒸着し、電極11及び引き出し部12を形成
した。次に、該基板10をUV−O3洗浄(60℃、3
0分)にて洗浄後、LB膜作製装置の基板駆動機構に電
極面が水面に垂直になるように装着し、直ちに純水水相
中に浸漬した。続いて、オクタデシルアミン(0.3m
g/ml)をクロロホルムに溶解し、それを該水面上に
展開して表面圧20mN/mまで圧縮し、この表面圧を
維持したまま5分間静置した。次に、前記基板駆動機構
33を作動させ、該機構に装着した基板30を速度10
mm/minで上昇させた。この結果、基板にオクタデ
シルアミンが1層疎水基を外側にして転写され、基板最
表面を疎水化できた。
EXAMPLES Examples of the present invention will be described below, but they do not limit the scope of the present invention in any way. Embodiment 1 FIG. 1 shows the basic configuration of Embodiment 1 of the present invention. The substrate used in this example was prepared according to the following recipe. An undoped silicon wafer having a thickness of 0.5 mm was used as the substrate 10, and Au / Cr was pattern-deposited on the substrate 10 at a thickness of 1000 ° to form electrodes 11 and lead portions 12. Next, the substrate 10 was washed with UV-O 3 (60 ° C., 3
(0 min), the substrate was mounted on a substrate drive mechanism of an LB film forming apparatus such that the electrode surface was perpendicular to the water surface, and immediately immersed in a pure water phase. Then, octadecylamine (0.3m
g / ml) was dissolved in chloroform, developed on the water surface, compressed to a surface pressure of 20 mN / m, and allowed to stand for 5 minutes while maintaining the surface pressure. Next, the substrate driving mechanism 33 is operated, and the substrate 30 mounted on the
mm / min. As a result, octadecylamine was transferred to the substrate with one layer of hydrophobic group on the outside, and the outermost surface of the substrate could be made hydrophobic.

【0018】次にポリ(p−フェニレンビニレン)の溶
媒可溶性前駆体を[M.Era et al Che
m.Lett.,1097(1988)]に記載の処方
に従って前記基板30に10層累積した。引き続き該基
板30を200℃2時間、減圧下で加熱し、最終産物と
してポリ(p−フェニレンビニレン)薄膜を得た。
Next, a solvent-soluble precursor of poly (p-phenylenevinylene) was used [M. Era et al Che
m. Lett. , 1097 (1988)], and 10 layers were accumulated on the substrate 30. Subsequently, the substrate 30 was heated at 200 ° C. for 2 hours under reduced pressure to obtain a poly (p-phenylenevinylene) thin film as a final product.

【0019】次に、本発明による装置(図5)に記録媒
体53として本実施例で作成した薄膜付き基板を装着し
た。次に、導電性被覆としてAlを500Å蒸着した探
針54を該記録媒体53に近接させ、10μm□範囲の
表面を走査して凹凸状況を評価したところ、該凹凸は走
査範囲内で1nm以下であった。次に、該探針54を走
査しながら図6に示す電圧パルスを前記探針54側が+
になるよう印加し、記録を行った。該探針54を走査原
点に戻した上で、今度は該記録媒体53−該探針54間
に該記録媒体側+となるよう1VのDC電圧を印加しな
がら該探針54を該記録媒体53表面上で再び走査さ
せ、検出された電流値をコンピュータ511により探針
54の位置情報とあわせて画像として再構成し、検出さ
れた電流値の内10nA(実測値)以下をカットオフし
たところ、上記でパルス印加を行った位置のみにおいて
直径約10nmの領域で少なくとも150nA以上の電
流(実測値)が観測された。また、上記の方法で記録が
行われた記録媒体を常温常圧で保管し、第1回目の再生
から時間の経過と共に再生動作を行ったところ、再生状
態に特に変化を見なかった。
Next, the substrate with the thin film formed in this embodiment was mounted as a recording medium 53 on the apparatus according to the present invention (FIG. 5). Next, a probe 54 on which Al was vapor-deposited at 500 ° as a conductive coating was brought close to the recording medium 53, and the surface in a 10 μm square area was scanned to evaluate the state of the unevenness. there were. Next, while scanning the probe 54, a voltage pulse shown in FIG.
And recording was performed. After returning the probe 54 to the scanning origin, this time the probe 54 is applied with a DC voltage of 1 V between the recording medium 53 and the probe 54 so as to be on the recording medium side +. Scanning is performed again on the surface 53, the detected current value is reconstructed as an image by the computer 511 together with the position information of the probe 54, and a cut-off of 10 nA (actual measurement value) or less of the detected current value is performed. A current (actual value) of at least 150 nA was observed only in the position where the pulse was applied as described above in a region having a diameter of about 10 nm. Further, the recording medium on which recording was performed by the above method was stored at normal temperature and normal pressure, and when the reproducing operation was performed with the passage of time from the first reproduction, no particular change was observed in the reproduction state.

【0020】[実施例2]本発明の実施例2を図1に基
づいて説明する。まず、本実施例で用いる基板を以下の
処方で作成した。基板10として厚さ0.5mmの非ド
ープ型シリコンウエハを用い、該基板10にAlを10
00Åの厚さでパターン蒸着し、電極11及び引き出し
部12を形成した。次に、該基板10の最表面を実施例
1に記載の処方に従って疎水化した。次に、ポリ(p−
フェニレンビニレン)の溶媒可溶性前駆体を実施例1に
記載の処方に従って基板に10層累積し、加熱処理を経
て最終産物としてポリ(p−フェニレンビニレン)薄膜
を得た。次に、本発明による装置(図5)に記録媒体5
3として本実施例で作成した薄膜付き基板を装着した。
次に、導電性被覆としてAuを500Åの厚さで蒸着し
た探針54を該記録媒体53に近接させ、10μm□範
囲の表面を走査して凹凸状況を評価したところ、該凹凸
は走査範囲内で1nm以下であった。
Second Embodiment A second embodiment of the present invention will be described with reference to FIG. First, a substrate used in this example was prepared with the following recipe. An undoped silicon wafer having a thickness of 0.5 mm was used as the substrate 10, and Al was added to the substrate 10.
The electrode 11 and the lead-out part 12 were formed by pattern evaporation with a thickness of 00 °. Next, the outermost surface of the substrate 10 was hydrophobized according to the prescription described in Example 1. Next, poly (p-
A solvent-soluble precursor of phenylene vinylene) was accumulated in 10 layers on the substrate according to the recipe described in Example 1, and a heat treatment was performed to obtain a poly (p-phenylene vinylene) thin film as a final product. Next, the recording medium 5 is added to the apparatus according to the present invention (FIG. 5).
As No. 3, the substrate with a thin film prepared in this example was mounted.
Next, a probe 54 in which Au was deposited as a conductive coating to a thickness of 500 ° was brought close to the recording medium 53, and the surface in a 10 μm square area was scanned to evaluate the unevenness. Was 1 nm or less.

【0021】次に、該探針54を走査しながら図6に示
す電圧パルスを前記記録媒体53側が+になるよう印加
し、記録を行った。該探針54を走査原点に戻した上
で、今度は該記録媒体53−該探針54間に該探針54
側+となるよう1VのDC電圧を印加しながら該探針5
4を該記録媒体53表面上で再び走査させ、検出された
電流値をコンピュータ511により探針54の位置情報
とあわせて画像として再構成したところ、実施例1と同
様の結果を得ることができた。また、上記の方法で記録
が行われた記録媒体を常温常圧で保管し、第1回目の再
生から時間の経過と共に再生動作を行ったところ、再生
状態に特に変化を見なかった。
Next, while scanning the probe 54, a voltage pulse shown in FIG. 6 was applied so that the recording medium 53 side became +, and recording was performed. After returning the probe 54 to the scanning origin, this time the probe 54 is placed between the recording medium 53 and the probe 54.
While applying a DC voltage of 1 V so that the probe 5
4 is rescanned on the surface of the recording medium 53, and the detected current value is reconstructed as an image by the computer 511 together with the position information of the probe 54. As a result, the same result as in the first embodiment can be obtained. Was. Further, the recording medium on which recording was performed by the above method was stored at normal temperature and normal pressure, and when the reproducing operation was performed with the passage of time from the first reproduction, no particular change was observed in the reproduction state.

【0022】[実施例3]実施例3においては、まず、
本実施例で用いる基板を実施例1の記載の処方で作成し
た。次に、ポリイソブチルメタクリレートとN、N’−
ビス(3−メチルフェニル)−1、1’−ビフェニル−
4−4’−ジアミン(TPD)をモル比1:1でクロロ
フォルム中に混合溶解し、実施例1に用いたLB膜作製
装置により、前記基板に20層累積した。次に、ポリ
(p−フェニレンビニレン)の溶媒可溶性前駆体を実施
例1に記載の処方に従って基板に10層累積し、加熱処
理を経て最終産物としてポリ(p−フェニレンビニレ
ン)薄膜を得た。本実施例における基板及び記録媒体の
構成模式図は図2aの様になる。以下、実施例1に記載
の装置に該記録媒体を装着し、実施例1に記載と同様の
方法により記録再生動作を行ったところ、実施例1と同
様の結果を得ることができた。また、上記の方法で記録
が行われた記録媒体を常温常圧で保管し、第1回目の再
生から時間の経過と共に再生動作を行ったところ、再生
状態に特に変化を見なかった。
[Embodiment 3] In Embodiment 3, first,
The substrate used in this example was prepared according to the recipe described in Example 1. Next, polyisobutyl methacrylate and N, N'-
Bis (3-methylphenyl) -1,1'-biphenyl-
4-4′-Diamine (TPD) was mixed and dissolved in chloroform at a molar ratio of 1: 1 and 20 layers were accumulated on the substrate by the LB film forming apparatus used in Example 1. Next, 10 solvent-soluble precursors of poly (p-phenylenevinylene) were accumulated on the substrate according to the recipe described in Example 1, and a heat treatment was performed to obtain a poly (p-phenylenevinylene) thin film as a final product. FIG. 2A is a schematic configuration diagram of the substrate and the recording medium in the present embodiment. Thereafter, the recording medium was mounted on the apparatus described in Example 1, and the recording / reproducing operation was performed by the same method as described in Example 1. As a result, the same result as in Example 1 was obtained. Further, the recording medium on which recording was performed by the above method was stored at normal temperature and normal pressure, and when the reproducing operation was performed with the passage of time from the first reproduction, no particular change was observed in the reproduction state.

【0023】[実施例4]実施例4においては、まず、
本実施例で用いる基板を実施例2に記載の処方で作成し
た。次にポリ(p−フェニレンビニレン)の溶媒可溶性
前駆体を実施例1に記載の処方に従って基板に10層累
積し、加熱処理を経て最終産物としてポリ(p−フェニ
レンビニレン)薄膜を得た。次に、実施例3に記載の処
方でポリイソブチルメタクリレートとN、N’−ビス
(3−メチルフェニル)−1、1’−ビフェニル−4、
4’−ジアミン(TPD)を混合し、既に上記で累積さ
れたポリ(p−フェニレンビニレン)薄膜基板上に20
層重畳累積した。本実施例における基板及び記録媒体の
構成模式図は図2bの様になる。以下、実施例2に記載
の装置に該記録媒体を装着し、実施例2に記載と同様の
方法により記録再生動作を行ったところ、実施例2と同
様の結果を得ることができた。また、上記の方法で記録
が行われた記録媒体を常温常圧で保管し、第1回目の再
生から時間の経過と共に再生動作を行ったところ、再生
状態に特に変化を見なかった。
[Embodiment 4] In Embodiment 4, first,
The substrate used in this example was prepared according to the recipe described in Example 2. Next, 10 solvent-soluble precursors of poly (p-phenylenevinylene) were accumulated on the substrate according to the prescription described in Example 1, and a heat treatment was performed to obtain a poly (p-phenylenevinylene) thin film as a final product. Next, according to the formulation described in Example 3, polyisobutyl methacrylate and N, N′-bis (3-methylphenyl) -1,1′-biphenyl-4,
4′-Diamine (TPD) was mixed and 20 μm was deposited on the poly (p-phenylenevinylene) thin film substrate already accumulated above.
Layer superposition was accumulated. FIG. 2B is a schematic view of the configuration of the substrate and the recording medium in this embodiment. Thereafter, the recording medium was mounted on the apparatus described in Example 2, and the recording and reproducing operation was performed by the same method as described in Example 2. As a result, the same results as in Example 2 could be obtained. Further, the recording medium on which recording was performed by the above method was stored at normal temperature and normal pressure, and when the reproducing operation was performed with the passage of time from the first reproduction, no particular change was observed in the reproduction state.

【0024】[実施例5]実施例5においては、まず、
本実施例で用いる基板を実施例1に記載の処方で作成し
た。次にポリ(p−フェニレンビニレン)の溶媒可溶性
前駆体を実施例1に記載の処方に従って基板に10層累
積し、加熱処理を経て最終産物としてポリ(p−フェニ
レンビニレン)薄膜を得た。次に、ポリイソブチルメタ
クリレートと2−(4−ビフェニリル)−5−(4−t
−ブチルフェニル)−1,3,4−オキサジアゾール
(PBD)をモル比1:1でクロロフォルム中に混合溶
解し、実施例1に用いたLB膜作製装置により、前記薄
膜上に20層重畳累積した。本実施例における基板及び
記録媒体の構成模式図は図3aの様になる。以下、実施
例1に記載の装置に該記録媒体を装着し、実施例1に記
載と同様の方法により記録再生動作を行ったところ、実
施例1と同様の結果を得ることができた。また、上記の
方法で記録が行われた記録媒体を常温常圧で保管し、第
1回目の再生から時間の経過と共に再生動作を行ったと
ころ、再生状態に特に変化を見なかった。
[Embodiment 5] In Embodiment 5, first,
The substrate used in this example was prepared according to the recipe described in Example 1. Next, 10 solvent-soluble precursors of poly (p-phenylenevinylene) were accumulated on the substrate according to the prescription described in Example 1, and a heat treatment was performed to obtain a poly (p-phenylenevinylene) thin film as a final product. Next, polyisobutyl methacrylate and 2- (4-biphenylyl) -5- (4-t
-Butylphenyl) -1,3,4-oxadiazole (PBD) was mixed and dissolved in chloroform at a molar ratio of 1: 1 and 20 layers were superposed on the thin film by the LB film forming apparatus used in Example 1. Cumulative. FIG. 3A is a schematic view of the configuration of the substrate and the recording medium in this embodiment. Thereafter, the recording medium was mounted on the apparatus described in Example 1, and the recording / reproducing operation was performed by the same method as described in Example 1. As a result, the same result as in Example 1 was obtained. Further, the recording medium on which recording was performed by the above method was stored at normal temperature and normal pressure, and when the reproducing operation was performed with the passage of time from the first reproduction, no particular change was observed in the reproduction state.

【0025】[実施例6]実施例6においては、まず、
本実施例で用いる基板を実施例2に記載の処方で作成し
た。次に、実施例5に記載の処方でポリイソブチルメタ
クリレートと2−(4−ビフェニリル)−5−(4−t
−ブチルフェニル)−1,3,4−オキサジアゾール
(PBD)を混合し、上記基板上に20層累積した。次
にポリ(p−フェニレンビニレン)の溶媒可溶性前駆体
を実施例1に記載の処方に従って基板に10層累積し、
加熱処理を経て最終産物としてポリ(p−フェニレンビ
ニレン)薄膜を得た。本実施例における基板及び記録媒
体の構成模式図は図3bの様になる。以下、実施例2に
記載の装置に該記録媒体を装着し、実施例2に記載と同
様の方法により記録再生動作を行ったところ、実施例2
と同様の結果を得ることができた。また、上記の方法で
記録が行われた記録媒体を常温常圧で保管し、第1回目
の再生から時間の経過と共に再生動作を行ったところ、
再生状態に特に変化を見なかった。また、上記の方法で
記録が行われた記録媒体を常温常圧で保管し、第1回目
の再生から時間の経過と共に再生動作を行ったところ、
再生状態に特に変化を見なかった。
[Embodiment 6] In Embodiment 6, first,
The substrate used in this example was prepared according to the recipe described in Example 2. Next, polyisobutyl methacrylate and 2- (4-biphenylyl) -5- (4-t
-Butylphenyl) -1,3,4-oxadiazole (PBD) was mixed, and 20 layers were accumulated on the substrate. Next, 10 layers of a solvent-soluble precursor of poly (p-phenylenevinylene) were accumulated on the substrate according to the formulation described in Example 1,
After the heat treatment, a poly (p-phenylenevinylene) thin film was obtained as a final product. FIG. 3B is a schematic diagram of the configuration of the substrate and the recording medium in this embodiment. Hereinafter, the recording medium was mounted on the device described in the second embodiment, and the recording / reproducing operation was performed in the same manner as in the second embodiment.
The same result as was obtained. Further, the recording medium on which recording was performed by the above method was stored at normal temperature and normal pressure, and the reproducing operation was performed over time after the first reproduction.
There was no particular change in the playback state. Further, the recording medium on which recording was performed by the above method was stored at normal temperature and normal pressure, and the reproducing operation was performed over time after the first reproduction.
There was no particular change in the playback state.

【0026】[実施例7]実施例7においては、まず、
本実施例で用いる基板を実施例1に記載の処方で作成し
た。次に、実施例3に記載の処方でポリイソブチルメタ
クリレートとN、N’−ビス(3−メチルフェニル)−
1、1’−ビフェニル−4、4’−ジアミン(TPD)
を混合し、上記基板上に20層累積した。次に、ポリ
(p−フェニレンビニレン)の溶媒可溶性前駆体を実施
例1に記載の処方に従って基板に10層累積し、加熱処
理を経て最終産物としてポリ(p−フェニレンビニレ
ン)薄膜を得た。次に、実施例5に記載の処方でポリイ
ソブチルメタクリレートと2−(4−ビフェニリル)−
5−(4−t−ブチルフェニル)−1,3,4−オキサ
ジアゾール(PBD)を混合し、前記薄膜上に20層重
畳累積した。本実施例における基板及び記録媒体の構成
模式図は図4aの様になる。以下、実施例1に記載の装
置に該記録媒体を装着し、実施例1に記載と同様の方法
により記録再生動作を行ったところ、実施例1と同様の
結果を得ることができた。また、上記の方法で記録が行
われた記録媒体を常温常圧で保管し、第1回目の再生か
ら時間の経過と共に再生動作を行ったところ、再生状態
に特に変化を見なかった。
[Embodiment 7] In Embodiment 7, first,
The substrate used in this example was prepared according to the recipe described in Example 1. Next, the polyisobutyl methacrylate and N, N'-bis (3-methylphenyl)-
1,1′-biphenyl-4,4′-diamine (TPD)
And 20 layers were accumulated on the substrate. Next, 10 solvent-soluble precursors of poly (p-phenylenevinylene) were accumulated on the substrate according to the recipe described in Example 1, and a heat treatment was performed to obtain a poly (p-phenylenevinylene) thin film as a final product. Next, polyisobutyl methacrylate and 2- (4-biphenylyl)-
5- (4-t-butylphenyl) -1,3,4-oxadiazole (PBD) was mixed, and 20 layers were superposed and accumulated on the thin film. FIG. 4A is a schematic view of the configuration of the substrate and the recording medium in this embodiment. Thereafter, the recording medium was mounted on the apparatus described in Example 1, and the recording / reproducing operation was performed by the same method as described in Example 1. As a result, the same result as in Example 1 was obtained. Further, the recording medium on which recording was performed by the above method was stored at normal temperature and normal pressure, and when the reproducing operation was performed with the passage of time from the first reproduction, no particular change was observed in the reproduction state.

【0027】[実施例8]実施例8においては、まず、
本実施例で用いる基板を実施例2に記載の処方で作成し
た。次に、実施例5に記載の処方でポリイソブチルメタ
クリレートと2−(4−ビフェニリル)−5−(4−t
−ブチルフェニル)−1,3,4−オキサジアゾール
(PBD)を混合し、前記基板上に20層累積した。次
に、ポリ(p−フェニレンビニレン)の溶媒可溶性前駆
体を実施例1に記載の処方に従って基板に10層累積
し、加熱処理を経て最終産物としてポリ(p−フェニレ
ンビニレン)薄膜を得た。次に、実施例3に記載の処方
でポリイソブチルメタクリレートとN、N’−ビス(3
−メチルフェニル)−1、1’−ビフェニル−4、4’
−ジアミン(TPD)を混合し、上記薄膜上に20層重
畳累積した。本実施例における基板及び記録媒体の構成
模式図は図4bの様になる。以下、実施例2に記載の装
置に該記録媒体を装着し、実施例2に記載と同様の方法
により記録再生動作を行ったところ、実施例2と同様の
結果を得ることができた。また、上記の方法で記録が行
われた記録媒体を常温常圧で保管し、第1回目の再生か
ら時間の経過と共に再生動作を行ったところ、再生状態
に特に変化を見なかった。
[Embodiment 8] In the embodiment 8, first,
The substrate used in this example was prepared according to the recipe described in Example 2. Next, polyisobutyl methacrylate and 2- (4-biphenylyl) -5- (4-t
-Butylphenyl) -1,3,4-oxadiazole (PBD) was mixed, and 20 layers were accumulated on the substrate. Next, 10 solvent-soluble precursors of poly (p-phenylenevinylene) were accumulated on the substrate according to the recipe described in Example 1, and a heat treatment was performed to obtain a poly (p-phenylenevinylene) thin film as a final product. Next, polyisobutyl methacrylate and N, N'-bis (3
-Methylphenyl) -1,1'-biphenyl-4,4 '
-Diamine (TPD) was mixed, and 20 layers were superposed and accumulated on the thin film. FIG. 4B is a schematic view of the configuration of the substrate and the recording medium in this embodiment. Thereafter, the recording medium was mounted on the apparatus described in Example 2, and the recording and reproducing operation was performed by the same method as described in Example 2. As a result, the same results as in Example 2 could be obtained. Further, the recording medium on which recording was performed by the above method was stored at normal temperature and normal pressure, and when the reproducing operation was performed with the passage of time from the first reproduction, no particular change was observed in the reproduction state.

【0028】[実施例9]実施例9においては、まず、
本実施例で用いる基板を実施例1に記載の処方で作成し
た。本実施例では他の有機化合物を用いて記録媒体を作
成した。実施例1と同様の処方で作成した基板に[I.
Watanabe,et al.ICSM 1988,
Santa Fe]に記載の処方に基づきポリヘキシル
チオフェンLB膜を10層、記録媒体として作製した。
以下、実施例1に記載の装置に該記録媒体を装着し、実
施例1に記載と同様の方法により記録再生動作を行った
ところ、実施例1と同様の結果を得ることができた。ま
た、上記の方法で記録が行われた記録媒体を常温常圧で
保管し、第1回目の再生から時間の経過と共に再生動作
を行ったところ、再生状態に特に変化を見なかった。
[Embodiment 9] In Embodiment 9, first,
The substrate used in this example was prepared according to the recipe described in Example 1. In this example, a recording medium was prepared using another organic compound. A substrate prepared according to the same formulation as in Example 1 [I.
Watanabe, et al. ICSM 1988,
[Santa Fe], 10 layers of polyhexylthiophene LB films were produced as recording media.
Thereafter, the recording medium was mounted on the apparatus described in Example 1, and the recording / reproducing operation was performed by the same method as described in Example 1. As a result, the same result as in Example 1 was obtained. Further, the recording medium on which recording was performed by the above method was stored at normal temperature and normal pressure, and when the reproducing operation was performed with the passage of time from the first reproduction, no particular change was observed in the reproduction state.

【0029】[実施例10]実施例10においては、ま
ず、本実施例で用いる基板を実施例2に記載の処方で作
成した。次に、実施例9に記載の処方に基づきポリヘキ
シルチオフェンLB膜を10層、記録媒体として作製し
た。以下、実施例2に記載の装置に該記録媒体を装着
し、実施例2に記載と同様の方法により記録再生動作を
行ったところ、実施例2と同様の結果を得ることができ
た。また、上記の方法で記録が行われた記録媒体を常温
常圧で保管し、第1回目の再生から時間の経過と共に再
生動作を行ったところ、再生状態に特に変化を見なかっ
た。また、上記の方法で記録が行われた記録媒体を常温
常圧で保管し、第1回目の再生から時間の経過と共に再
生動作を行ったところ、再生状態に特に変化を見なかっ
た。
Example 10 In Example 10, first, a substrate used in this example was prepared according to the recipe described in Example 2. Next, based on the prescription described in Example 9, 10 layers of polyhexylthiophene LB film were produced as a recording medium. Thereafter, the recording medium was mounted on the apparatus described in Example 2, and the recording and reproducing operation was performed by the same method as described in Example 2. As a result, the same results as in Example 2 could be obtained. Further, the recording medium on which recording was performed by the above method was stored at normal temperature and normal pressure, and when the reproducing operation was performed with the passage of time from the first reproduction, no particular change was observed in the reproduction state. Further, the recording medium on which recording was performed by the above method was stored at normal temperature and normal pressure, and when the reproducing operation was performed with the passage of time from the first reproduction, no particular change was observed in the reproduction state.

【0030】[実施例11]実施例11の基本構成は、
図1に示されるものであり、その基板を以下の処方で作
成した。基板10として厚さ0.5mmの非ドープ型シ
リコンウエハを用い、該基板10にCrを1000Åの
厚さでパターン蒸着し、電極11及び引き出し部12を
形成した。次に該基板10をUV−O3洗浄(60℃、
30分)にて洗浄後、LB膜作製装置の基板駆動機構に
電極面が水面に垂直になるように装着し、直ちに純水水
相中に浸漬した。続いてオクタデシルアミン(0.3m
g/ml)をクロロホルムに溶解し、それを該水面上に
展開して表面圧20mN/mまで圧縮し、この表面圧を
維持したまま5分間静置した。次に前記基板駆動機構3
3を作動させ、該機構に装着した基板30を速度10m
m/minで上昇させた。この結果、基板にオクタデシ
ルアミンが1層疎水基を外側にして転写され、基板最表
面を疎水化できた。
[Embodiment 11] The basic configuration of Embodiment 11 is as follows.
This was shown in FIG. 1, and the substrate was prepared according to the following recipe. An undoped silicon wafer having a thickness of 0.5 mm was used as the substrate 10, and Cr was pattern-deposited on the substrate 10 to a thickness of 1000 ° to form the electrodes 11 and the lead portions 12. Next, the substrate 10 is subjected to UV-O 3 cleaning (60 ° C.,
(30 minutes), the substrate was mounted on a substrate driving mechanism of an LB film forming apparatus so that the electrode surface was perpendicular to the water surface, and immediately immersed in a pure water phase. Then octadecylamine (0.3m
g / ml) was dissolved in chloroform, developed on the water surface, compressed to a surface pressure of 20 mN / m, and allowed to stand for 5 minutes while maintaining the surface pressure. Next, the substrate driving mechanism 3
3 is operated, and the substrate 30 mounted on the mechanism is moved at a speed of 10 m.
m / min. As a result, octadecylamine was transferred to the substrate with one layer of hydrophobic group on the outside, and the outermost surface of the substrate could be made hydrophobic.

【0031】次に、ポリ(p−フェニレンビニレン)の
溶媒可溶性前駆体を実施例1に記載の処方に従って基板
に10層累積し、加熱処理を経て最終産物としてポリ
(p−フェニレンビニレン)薄膜を得た。次に実施例1
で使用した装置に記録媒体として本実施例で作成した薄
膜付き基板を装着した。次に導電性被覆としてTiを5
00Å蒸着した探針を該記録媒体に近接させ、10μm
□範囲の表面を走査して凹凸状況を評価したところ、該
凹凸は走査範囲0.5nm以下であった。引き続き実施
例1と同様の方法により記録再生動作を行ったところ、
実施例1と同様の結果を得ることができた。また、上記
の方法で記録が行われた記録媒体を常温常圧で保管し、
第1回目の再生から時間の経過と共に再生動作を行った
ところ、再生状態に特に変化を見なかった。
Next, 10 solvent-soluble precursors of poly (p-phenylenevinylene) were accumulated on the substrate in accordance with the recipe described in Example 1, and after heating, a poly (p-phenylenevinylene) thin film was obtained as a final product. Obtained. Next, Example 1
The substrate with the thin film prepared in this example was mounted as a recording medium on the apparatus used in the above. Next, as a conductive coating, 5
00Å The deposited probe is brought close to the recording medium and
When the surface of the area was scanned to evaluate the unevenness, the unevenness was 0.5 nm or less in the scanning range. When the recording / reproducing operation was continuously performed in the same manner as in the first embodiment,
The same result as in Example 1 was obtained. Further, the recording medium recorded by the above method is stored at normal temperature and normal pressure,
When the reproducing operation was performed with the passage of time from the first reproduction, no particular change was observed in the reproduction state.

【0032】[実施例12]実施例12においては、ま
ず、本実施例で用いる基板を実施例1に記載の処方で作
成した。次に、ポリフェニレンビニレンのメタノール可
溶性誘導体を[Y−E Kimet al,Apl.P
hys.Lett., 69,599(1996)]に
記載の処方に従って前記基板に70Å、スピンコートに
より塗布した。引き続き該基板を100℃で1時間加熱
し、メタノールを完全に乾燥させた。次に実施例1で使
用した装置に記録媒体として本実施例で作成した薄膜付
き基板を装着し、実施例1と同様の評価を行った。導電
性被覆としてAlを500Å蒸着した探針による記録媒
体の凹凸状況を評価したところ、該凹凸は走査範囲で3
nm以下であり、平滑性という点で他の実施例にあるL
B膜に劣った。引き続き実施例1と同様の方法により記
録再生動作を行ったところ、実施例1と同様の結果を得
ることができた。また、上記の方法で記録が行われた記
録媒体を常温常圧で保管し、第1回目の再生から時間の
経過と共に再生動作を行ったところ、再生状態に特に変
化を見なかった。
Example 12 In Example 12, first, a substrate used in this example was prepared according to the recipe described in Example 1. Next, a methanol-soluble derivative of polyphenylenevinylene was prepared [Y-E Kimetal, Apl. P
hys. Lett. , 69 , 599 (1996)], and the substrate was spin-coated at 70 °. Subsequently, the substrate was heated at 100 ° C. for 1 hour to completely dry the methanol. Next, the substrate with the thin film formed in this example was mounted on the device used in Example 1 as a recording medium, and the same evaluation as in Example 1 was performed. When the unevenness of the recording medium was evaluated by a probe on which Al was deposited at 500 [deg.] As a conductive coating, the unevenness was 3 in the scanning range.
nm or less in other embodiments in terms of smoothness.
Inferior to B film. Subsequently, the recording / reproducing operation was performed in the same manner as in Example 1. As a result, the same result as in Example 1 could be obtained. Further, the recording medium on which recording was performed by the above method was stored at normal temperature and normal pressure, and when the reproducing operation was performed with the passage of time from the first reproduction, no particular change was observed in the reproduction state.

【0033】[0033]

【発明の効果】本発明は、以上のように記録媒体の電極
層と探針の導電部とを、仕事関数の異なる組み合わせに
より構成し、いずれか一方の仕事関数の小さい方を正電
圧として該記録媒体の任意の位置でパルス電圧を印加し
て記録を行い、該記録された情報の再生をいずれか一方
の仕事関数の大きい方を正電圧として行うようにするこ
とによって、記録情報の再生に際して、非記録部分(バ
ックグラウンドも含めて)からの出力信号と記録部分か
らの出力信号とがクロストークすることなく記録信号を
再生し、S/N比のより高い情報の記録再生方法及び記
録再生装置を実現することができる。また、このような
本発明の構成によると、記録情報を再生する場合のDC
電圧は、記録媒体の発光に必要な電圧値の半分以下の低
電圧の印加で、例えば、2Vのような低電圧の印加で、
記録情報の再生を行うことができ、システムの消費電力
の低減化を図ることが可能となる。
As described above, according to the present invention, the electrode layer of the recording medium and the conductive portion of the probe are constituted by combinations having different work functions, and one of the work functions having the smaller work function is defined as a positive voltage. When a pulse voltage is applied at an arbitrary position on the recording medium to perform recording, and the recorded information is reproduced by using one of the work functions having a larger work function as a positive voltage, the reproduction of the recorded information is performed. A method for reproducing a recording signal without crosstalk between an output signal from a non-recording part (including a background) and an output signal from a recording part, and a recording / reproducing method and recording / reproduction of information having a higher S / N ratio. The device can be realized. Further, according to the configuration of the present invention, the DC in reproducing the recorded information is reduced.
The voltage is applied by applying a low voltage equal to or less than half the voltage value required for light emission of the recording medium, for example, by applying a low voltage such as 2V.
The recorded information can be reproduced, and the power consumption of the system can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に用いられる基板及び記録媒体の構成を
示す模式図である。
FIG. 1 is a schematic diagram showing a configuration of a substrate and a recording medium used in the present invention.

【図2】本発明に用いられる基板及び記録媒体の構成を
示す模式図である。
FIG. 2 is a schematic diagram showing a configuration of a substrate and a recording medium used in the present invention.

【図3】本発明に用いられる基板及び記録媒体の構成を
示す模式図である。
FIG. 3 is a schematic diagram showing a configuration of a substrate and a recording medium used in the present invention.

【図4】本発明に用いられる基板及び記録媒体の構成を
示す模式図である。
FIG. 4 is a schematic diagram showing a configuration of a substrate and a recording medium used in the present invention.

【図5】本発明に用いられる記録再生装置のブロック図
である。
FIG. 5 is a block diagram of a recording / reproducing apparatus used in the present invention.

【図6】記録媒体へ情報記録を行うために該記録媒体に
印加されるパルス電圧の波形図である。
FIG. 6 is a waveform diagram of a pulse voltage applied to a recording medium to record information on the recording medium.

【符号の説明】[Explanation of symbols]

10,20,30,40,50…絶縁性基板 11,21,31,41,51…導電性基板 12,22,23,42…引き出し部 13,23,33,43,53…記録媒体 14,24,34,44,54…探針 55…カンチレバー 15,25,35,45…導電性被覆 16,26,36,46,52…記録部 27,47…正孔輸送層 37,48…電子輸送層 56…探針変位検出手段 57…サーボ制御手段 58…圧電アクチュエータ 59…電流検出手段 510…表示装置 511…コンピュータ 512…電圧印加電源 10, 20, 30, 40, 50 ... insulating substrate 11, 21, 31, 41, 51 ... conductive substrate 12, 22, 23, 42 ... lead-out portion 13, 23, 33, 43, 53 ... recording medium 14, 24, 34, 44, 54 ... probe 55 ... cantilever 15, 25, 35, 45 ... conductive coating 16, 26, 36, 46, 52 ... recording part 27, 47 ... hole transport layer 37, 48 ... electron transport Layer 56: Probe displacement detection means 57: Servo control means 58: Piezoelectric actuator 59: Current detection means 510: Display device 511: Computer 512: Voltage application power supply

Claims (10)

【特許請求の範囲】[Claims] 【請求項1】電極層上に電圧印加により発光する有機化
合物からなる記録媒体層が形成された記録媒体と、該記
録媒体層に導電部を有する探針を近接させて記録再生を
行う情報の記録再生方法において、該記録媒体の電極層
と該探針の導電部とが仕事関数の異なる組み合わせから
なり、いずれか一方の仕事関数の小さい方を正電圧とし
て該記録媒体の任意の位置でパルス電圧を印加して記録
を行い、該記録された情報の再生をいずれか一方の仕事
関数の大きい方を正電圧として行うことを特徴とする情
報の記録再生方法。
1. A recording medium in which a recording medium layer made of an organic compound which emits light upon application of a voltage is formed on an electrode layer, and a probe having a conductive portion is brought close to the recording medium layer for recording and reproducing information. In the recording / reproducing method, the electrode layer of the recording medium and the conductive part of the probe are formed of a combination having different work functions, and a pulse having a smaller work function is set as a positive voltage at an arbitrary position on the recording medium as a positive voltage. An information recording / reproducing method, comprising: performing recording by applying a voltage; and reproducing the recorded information by using one of the work functions having a larger work function as a positive voltage.
【請求項2】前記有機化合物が、高分子化合物を含むこ
とを特徴とする請求第1項に記載の情報の記録再生方
法。
2. The information recording / reproducing method according to claim 1, wherein said organic compound includes a polymer compound.
【請求項3】前記電極層もしくは前記探針導電部のいず
れか一方の仕事関数の大きい部分に接合して、正孔輸送
能の高い層を介在させたことを特徴とする請求項1また
は請求項2に記載の情報の記録再生方法。
3. The semiconductor device according to claim 1, wherein a layer having a high hole-transporting ability is interposed between the electrode layer and the conductive portion of the probe in a portion having a large work function. Item 4. A method for recording and reproducing information according to Item 2.
【請求項4】前記電極層もしくは前記探針導電部のいず
れか一方の仕事関数の小さい部分に接合して、電子輸送
能の高い層を介在させたことを特徴とする請求項1また
は請求項2に記載の情報の記録再生方法。
4. The semiconductor device according to claim 1, wherein a portion having a small work function is bonded to one of the electrode layer and the probe conductive portion, and a layer having a high electron transport ability is interposed. 2. A method for recording and reproducing information according to item 2.
【請求項5】前記電極層もしくは前記探針導電部のいず
れか一方の仕事関数の大きい部分に接合して正孔輸送能
の高い層を介在させ、同時に、前記電極層もしくは前記
探針導電部のいずれか一方の仕事関数の小さい部分に接
合して電子輸送能の高い層を介在させたことを特徴とす
る請求項1または請求項2に記載の情報の記録再生方
法。
5. The electrode layer or the probe conductive portion is bonded to a portion having a large work function of either the electrode layer or the probe conductive portion, and a layer having a high hole transport ability is interposed therebetween. 3. The information recording / reproducing method according to claim 1, wherein a layer having a high electron transporting ability is interposed by bonding to a portion having a small work function.
【請求項6】電極層上に電圧印加により発光する有機化
合物からなる記録媒体層が形成された記録媒体と、該記
録媒体層に導電部を有する探針を近接させて記録再生を
行う情報の記録再生装置において、該記録媒体の電極層
と該探針の導電部とを仕事関数の異なる組み合わせによ
って構成したことを特徴とする情報の記録再装置。
6. A recording medium in which a recording medium layer made of an organic compound which emits light by application of a voltage is formed on an electrode layer, and a probe having a conductive portion is brought close to the recording medium layer for recording and reproducing information. An information recording / reproducing apparatus, wherein the electrode layer of the recording medium and the conductive portion of the probe are constituted by combinations having different work functions.
【請求項7】前記有機化合物が、高分子化合物を含むこ
とを特徴とする請求第6項に記載の情報の記録再生装
置。
7. The information recording / reproducing apparatus according to claim 6, wherein said organic compound includes a polymer compound.
【請求項8】前記電極層もしくは前記探針導電部のいず
れか一方の仕事関数の大きい部分に接合して、正孔輸送
能の高い層を介在させたことを特徴とする請求項6また
は請求項7に記載の情報の記録再生装置。
8. The semiconductor device according to claim 6, wherein a layer having a high hole transporting ability is interposed between the electrode layer and the portion having a large work function of one of the probe conductive portions. Item 8. An information recording / reproducing apparatus according to Item 7.
【請求項9】前記電極層もしくは前記探針導電部のいず
れか一方の仕事関数の小さい部分に接合して、電子輸送
能の高い層を介在させたことを特徴とする請求項6また
は請求項7に記載の情報の記録再生装置。
9. The semiconductor device according to claim 6, wherein one of the electrode layer and the probe conductive portion is joined to a portion having a small work function, and a layer having a high electron transport ability is interposed. 8. The information recording / reproducing apparatus according to 7.
【請求項10】前記電極層もしくは前記探針導電部のい
ずれか一方の仕事関数の大きい部分に接合して正孔輸送
能の高い層を介在させ、同時に、前記電極層もしくは前
記探針導電部のいずれか一方の仕事関数の小さい部分に
接合して電子輸送能の高い層を介在させたことを特徴と
する請求項6または請求項7に記載の情報の記録再生装
置。
10. The electrode layer or the probe conductive portion is joined to a portion having a large work function of one of the electrode layer and the probe conductive portion, and a layer having a high hole transport ability is interposed therebetween. 8. The information recording / reproducing apparatus according to claim 6, wherein a layer having a high electron transporting ability is interposed by being joined to a portion having a small work function.
JP9977197A 1997-04-01 1997-04-01 Method for recording and reproducing information and device therefor Pending JPH10283685A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9977197A JPH10283685A (en) 1997-04-01 1997-04-01 Method for recording and reproducing information and device therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9977197A JPH10283685A (en) 1997-04-01 1997-04-01 Method for recording and reproducing information and device therefor

Publications (1)

Publication Number Publication Date
JPH10283685A true JPH10283685A (en) 1998-10-23

Family

ID=14256240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9977197A Pending JPH10283685A (en) 1997-04-01 1997-04-01 Method for recording and reproducing information and device therefor

Country Status (1)

Country Link
JP (1) JPH10283685A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999059147A1 (en) * 1998-05-11 1999-11-18 Seiko Instruments Inc. Near field optical head and reproduction method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999059147A1 (en) * 1998-05-11 1999-11-18 Seiko Instruments Inc. Near field optical head and reproduction method

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