JPH10282145A - Glass wiring board, method of manufacturing glass wiring board and probe card - Google Patents

Abstract

PROBLEM TO BE SOLVED: To mount arbitrary electronic parts on the same surface on which electrodes are formed. SOLUTION: A glass wiring board is constituted by putting wiring 102 and a photosensitive insulating material 103 upon another on a glass substrate 101. The wiring 102 is formed from the outside of the recessed section of the substrate 101 to the inside of the recessed section and the electrode terminals 111a and 11b of discrete parts 111 are connected to the wiring 102. In addition, bumps 121 and 122 are formed on the wiring 102 on the outside of the recessed section. When the wiring board 101 is used as the substrate of a probe card, the inspections of ICs to be inspected can be conducted in a state where the discrete parts 111 are respectively arranged near the ICs.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a glass wiring substrate, a method of manufacturing a glass substrate, and a probe card, and more particularly, to a glass wiring substrate for electrically connecting an integrated circuit.
The present invention relates to a method for manufacturing the glass substrate and a probe card for inspecting an integrated circuit formed on a wafer.

[0002]

2. Description of the Related Art A probe card is used to check the function of an integrated circuit (IC) on a wafer. This probe card has a large number of electrodes (bumps) for contacting electrodes of an IC to be inspected. Then, while the bumps of the probe card are being pressed against the electrodes of the IC, an electric signal is applied from the probe card side to cause
C function can be tested.

However, conventional probe cards have IC
Only one or several bumps are provided. As a result, only one or several ICs can be tested on the wafer at the same time. To test all ICs, reapply the probe card many times and apply test signals and measure output signals. I had to repeat. Therefore, a probe card that can be electrically connected to a large number of IC electrodes in a wide range has been desired in order to improve the efficiency of IC function inspection.

Incidentally, in order to make a probe card which can make contact simultaneously with all the electrodes existing on the entire surface of the wafer, the height of the bumps must be constant. That is, flatness of the surface on which the bump is formed is required. This is because if the flatness is poor, there is a possibility that an electrode that cannot be contacted may be generated. Therefore, it is conceivable to use a glass substrate as a substrate for forming the bumps of the probe card. Since glass easily meets the condition of surface flatness, a probe card having a uniform bump height can be manufactured by forming bumps on a glass substrate.

[0005]

However, even if a glass substrate is used, there remains a problem with respect to a mounting location of a discrete component such as a pass capacitor. That is, in order to improve the reliability of the IC, it is necessary to perform the test using a signal having a frequency substantially equal to the operating frequency when the IC is used. Accordingly, with the recent increase in the operating frequency of ICs, it is necessary to increase the frequency of signals during inspection. In order to support high frequency measurement, discrete components such as pass capacitors must be mounted on the probe card side, and these discrete components must be mounted as close as possible to the IC to be measured. Must. Otherwise, noise is generated and accurate inspection cannot be performed.

However, discrete components can be mounted by a conventional technique on a portion outside a region where a bump of a probe card is arranged or on a back surface of the probe card. Among these, in the method of arranging the discrete components outside the region where the bumps of the probe card are arranged, when measuring the entire wafer at once, the discrete components are mounted on the portion outside the wafer size. . If the discrete component is mounted on a portion outside the wafer size, the distance to the IC to be measured near the center of the wafer becomes long, so that it becomes impossible to cope with high frequencies. In the method of mounting discrete components on the back surface of the probe card, the wiring (v
Although ia) is required, it is not easy to perform such processing on a glass substrate.

Therefore, it is desired to provide a substrate having a flat surface on which electronic components such as discrete components can be mounted at an arbitrary position on the same surface as the surface on which electrodes such as bumps are formed. With such a substrate, a large number of I
It is also possible to make a probe card which is electrically connected to the electrode C and has discrete components arranged near each IC.

[0008] The present invention has been made in view of such a point, and it is an object of the present invention to provide a glass substrate on which an arbitrary electronic component is mounted on the same surface as a surface on which electrodes are formed. Another object of the present invention is to provide a method for manufacturing a glass substrate on which an arbitrary electronic component is mounted on the same surface as the surface on which the electrodes are formed.

Another object of the present invention is to provide a method for electrically connecting a large number of ICs in a wide area on a wafer,
An object of the present invention is to provide a probe card which can connect the electrode C and the discrete component at a short distance.

[0010]

According to the present invention, in order to solve the above-mentioned problems, a glass wiring board for electrically connecting to an integrated circuit includes a glass substrate having a depression at a predetermined position on one surface. An electronic component mounted in the depression of the glass substrate, an electrode formed on the same surface as the depression of the glass substrate, and a wiring for electrically connecting the electronic component and the electrode. A glass wiring substrate is provided.

In this glass wiring board, since the electrodes are formed on the glass substrate, the height of the electrodes is constant. Further, since the electronic component is mounted in the recess provided at a predetermined position on the glass substrate, the electronic component can be mounted near the electrode. Therefore, by electrically connecting the electrodes of the glass wiring board to the electrodes of the integrated circuit, desired electronic components can be arranged near the integrated circuit.

In a method for manufacturing a glass wiring board for making an electrical connection with an integrated circuit, a step of forming a depression at a predetermined position on the glass substrate, the step of forming a depression from the outside of the depression of the glass substrate to the inside of the depression And forming an electrode on the wiring outside the depression of the glass substrate, and mounting an electronic component on the wiring in the depression. A method for manufacturing a substrate is provided.

According to the method for manufacturing a glass wiring board,
An electronic component is mounted at a predetermined position on the same surface as the electrode, and a glass wiring board is created in which the electrode and the electronic component are connected by wiring. Further, in a probe card for inspecting an integrated circuit formed on a wafer, a glass substrate having a plurality of depressions at predetermined positions on a surface to be opposed to a wafer to be inspected, and A plurality of mounted discrete components, a plurality of glass substrate-side electrodes formed at positions to be matched with electrodes of a plurality of integrated circuits on the inspection target wafer, and the discrete components and the glass substrate-side electrodes. A probe card, comprising: a glass wiring substrate including wiring to be electrically connected.

In this probe card, since the glass substrate side electrode is formed on the glass substrate, the height of the glass substrate side electrode is constant. Further, since the discrete component is mounted in the depression on the same surface as the glass substrate side electrode, the discrete component can be mounted near a desired electrode. This allows simultaneous inspection of a wide range of integrated circuits formed on a wafer using this probe card to ensure that the electrodes of the integrated circuit are connected to the electrodes on the glass substrate side, and discrete components are placed near each integrated circuit. In the state in which is disposed, a function test using a high-frequency signal can be performed.

[0015]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 2 is an overall view of the glass wiring board of the present invention. (A) is a top view, (B) is XX sectional drawing of (A). In this figure, the surface that comes into contact with the wafer is the upper surface.

In the glass wiring substrate 100 of the present invention, a discrete component 110 such as a pass capacitor and a bump 120 to be connected to an electrode of each IC are provided on a glass substrate 101. The surface of the glass substrate 101 has sufficient flatness. Discrete parts 1
Numeral 10 is provided corresponding to all the ICs of the wafer to be inspected. As can be seen from the cross-sectional view, a large number of depressions are formed in the glass substrate, and the discrete components 111 to 116 are mounted in the depressions.
On the other hand, the bumps 121 to 129 and 120a to 120c
It is formed in a region other than the depression.

FIG. 1 is a partially enlarged view of a cross section of a glass wiring board of the present invention. A wiring 102 and a photosensitive insulating material 103 are overlaid on a glass substrate 101. Wiring 102
Are formed from portions other than the depression of the glass substrate 101 to the inside of the depression of the glass substrate 101. The electrode terminals 111a and 111b of the discrete component 111
Are connected to the wiring 102. Also, the bump 121,
Reference numeral 122 is formed on the wiring 102 in a region other than the depression.

As a result, the bumps 121 having a uniform height are provided.
122 are formed near the discrete component 11
1 can be implemented. Moreover, since the discrete component 111 is mounted in the depression, each bump 1
When the electrodes 21 to 122 are brought into contact with the electrodes on the wafer side,
The discrete component 111 does not interfere. Therefore, if the glass wiring substrate 100 is used as a substrate of a probe card, an inspection can be performed in a state where discrete components are arranged near each of the ICs to be inspected. Therefore, high-frequency operation tests
This can be performed simultaneously for all the ICs on the wafer. Note that terminals for connection to the inspection device are provided along the outer periphery of the glass wiring board 100.

By the way, for inspection of an IC on a wafer,
There is an inspection (burn-in) performed while applying heat. In order to perform such an inspection with a probe card that can simultaneously contact all the ICs on the wafer, it is necessary that the coefficient of thermal expansion of the probe card be close to that of the wafer.
That is, the thermal expansion coefficient of the probe card is silicon (S
If the wafer is different from the wafer of i), the position of the electrode on the wafer side and the bump on the probe card side are displaced by the difference in expansion coefficient at the time of burn-in, and there is a possibility that contact cannot be made. In particular, this tendency becomes remarkable when the size of the wafer becomes as large as 8 inches or 10 inches. Therefore, it is desirable to use a glass substrate having a thermal expansion coefficient close to that of Si.

Further, chip components for surface mounting are used as discrete components to be embedded. These components are small in size, and some of 1.0 × 0.5 × 0.35mm ^3. By using such a small part, the recess made in the glass can be made small, so that the processing efficiency is improved.

Next, a method for manufacturing a glass wiring board of the present invention will be described. 3 and 4 are diagrams showing a manufacturing process of the glass wiring board. FIG. 3 shows the first half of the manufacturing process (step S
1 to S4), and FIG. 4 shows the latter half of the manufacturing process (Steps S5 to S7). [S1] As the glass used for the substrate, a glass having a coefficient of thermal expansion close to that of Si is selected, and the thickness of the glass is twice or more the thickness of the component in consideration of embedding the discrete component.
For example, NA-35 (a non-alkali glass manufactured by HOYA) having a plate thickness of 3 mm is used. A specific example of glass having a coefficient of thermal expansion close to that of Si will be described later.

After preparing the glass substrate 101, a wiring layer 102a is formed on the surface thereof. A metal film is formed and used for the wiring layer 102a. For that, first, the glass substrate 1
01, a thin film of Cr-Cu is applied by sputtering. Then, a Cu—Ni layer having a thickness of about 5 μm is formed by performing electrolytic plating using the Cr—Cu thin film as an electrode.

Next, a photoresist is coated for patterning, the wiring pattern is exposed with an exposure machine and a photomask, the resist is developed, and the metal film is etched.
Finally, the resist is removed. [S2] A layer of the photosensitive insulating material 103 is formed on the wiring layer 102a. As the photosensitive insulating material 103, a material having a low dielectric constant such as photosensitive polyimide is used. This is because a material having a lower dielectric constant has better high-frequency characteristics of the completed substrate. To this end, a photosensitive insulating material 103 is coated, and a pattern of a via (via) or an opening is exposed using an exposure machine and a photomask, and is developed and cured (hardened). Thereby, an insulating layer can be formed. [S3] Since the glass dent is formed by sandblasting (or etching), a portion where no dent is formed is covered with a sandblasting resist 104 (or etching resist). [S4] A depression 101a is formed in the glass substrate by sandblasting (or etching). The depth of the depression 101a is such that the discrete components mounted in the depression 101a do not protrude from the wiring surface. [S5] The sandblasting resist 104 (or the etching resist) is removed, and a conductor film 102b (Cu or the like) to be the uppermost wiring is formed. Then, the bump forming resist 105 is patterned, and the bumps 121 and 122 are formed by plating. At this time, the conductive film 10
2b is connected to the lower wiring layer 102a. [S6] The bump resist 105 is removed, and the uppermost wiring layer 102c is formed in the same manner as in step S1. At this time, the connection terminals 102d and 102
2e is made at the same time. [S7] The discrete component 111 is mounted in the recess. At this time, the electrode terminal 1 of the discrete component 111
11a and 111b are connected to the connection terminals 102d and 102e with solder or conductive adhesive.

As described above, the glass wiring board of the present invention can be manufactured. In addition, as the material of the glass substrate, glass whose expansion coefficient is approximated to that of silicon is used. Examples of such glass include the following.

As a first example, there is a glass satisfying the following conditions. SiO ₂ , B ₂ O ₃ , Al ₂ O ₃ , MgO,
It contains 95 mol% or more of CaO, SrO, and BaO in total. The content of each component in terms of mol% is 62% or more and 68% or less of SiO ₂ B ₂ O ₃ 8% or more and less than 12% Al ₂ O ₃ 9% or more and 13% or less MgO 1% or more and 5% or less CaO 3% or more and 7% or less SrO 1% or more and less than 3% BaO 1% or more and less than 3% SrO + BaO 2% or more and 5% or less. The reasons for these limitations are as follows.

When the content of SiO ₂ exceeds 68 mol%, the viscosity increases and the meltability decreases. When the content is less than 62 mol%, the strain point of the obtained glass is too low. When the content of B ₂ O ₃ is 12 mol% or more, the strain point of the obtained glass is too low and the nitric acid resistance is lowered. When the content is less than 8 mol%, the viscosity is increased and the melting property is lowered, and the obtained glass is obtained. The hydrofluoric acid resistance of the glass decreases.

When the content of Al ₂ O ₃ exceeds 13 mol%, the glass obtained has reduced devitrification resistance, and when the glass is brought into contact with hydrofluoric acid, the glass surface becomes cloudy due to hydrofluoric acid. Easier to do. On the other hand, if the content of Al ₂ O ₃ is less than 9 mol%, the strain point of the obtained glass is too low.

Since MgO is the most effective component in alkaline earth oxides as a component for lowering the expansion coefficient and viscosity of the obtained glass, it must be contained in an amount of 1 mol% or more. If the content exceeds the above range, the resulting glass will have reduced devitrification resistance.

Since CaO has almost the same action as MgO, it is required to be 3 mol% or more. However, if it exceeds 7 mol%, the devitrification resistance of the obtained glass decreases.

Both SrO and BaO are effective components as components for improving the devitrification resistance of the obtained glass, and increase the viscosity to lower the melting property and lower the strain point of the obtained glass. It is also a component that increases the expansion coefficient. Therefore, the content is appropriately 1 mol% or more and less than 3 mol%, respectively. Further, the total amount of both is limited to 5 mol% or less.

The total amount of these components is 95 mol%
If it is less than 30, desired characteristics cannot be obtained, so that it is limited to 95 mol% or more. With the above components, 1
The average linear expansion coefficient at 00 ° C to 300 ° C is 34 ×
10 ^{−7 to} 39 × 10 ⁻⁷ deg · cm ⁻¹ and a strain point of 630
It is possible to obtain a glass having a temperature of not less than ° C. This glass is excellent in melting property and moldability. Note that SiO ₂ , B ₂ O ₃ , Al ₂ O ₃ , MgO, Ca
In addition to O, SrO, and BaO, ZnO, PbO, La
_At least one of ₂ O ₃ , ZrO ₂ , As ₂ O ₃ and Sb ₂ O ₃ may be contained in a total amount of 5 mol% or less.

The glass as the first example is disclosed in Japanese Patent Laid-Open No. 4-160030. Also, the second
As an example, the content of the following components is expressed in terms of% by weight: SiO ₂ 50 to 65% Al ₂ O ₃ 12 to 28% (however, SiO ₂ + Al ₂ O ₃ 65 to 85%) MgO 0 to 20% ZnO 0 _{~10% B 2 O 3 0~20%} ( _{however, MgO + ZnO + B 2 O} 3 10~30
%) Of glass. The reasons for these limitations are as follows.

SiO ₂ is a basic component of glass.
If the amount is less than 0% by weight, not only the expansion coefficient becomes too large, but also the chemical durability is deteriorated. If the amount exceeds 65% by weight, the viscosity becomes too high and melting becomes difficult, so the amount is limited to 50 to 65% by weight. The optimal range for SiO ₂ is 50-60.
% By weight.

Al ₂ O ₃ is a component essential for obtaining an elongation percentage curve similar to that of a silicon crystal, and is a component providing high heat resistance and excellent chemical durability. However,
If the content is less than 12% by weight, the tendency of phase separation increases and the viscosity in the high-temperature region increases. On the other hand, if it exceeds 28% by weight, the devitrification resistance deteriorates. Optimal range of Al ₂ O ₃ is 18 to 25 wt%.

The total amount of SiO ₂ and Al ₂ O ₃ is 65
~ 85% by weight. If this total amount is less than 65% by weight, the coefficient of thermal expansion becomes too large, and if it exceeds 85% by weight, glass melting becomes difficult.

MgO, ZnO and B ₂ O ₃ are components that provide a stable glass. It is necessary to contain at least one of these components. MgO has the effect of increasing the coefficient of thermal expansion and reducing the viscosity, but if it exceeds 20% by weight, the coefficient of thermal expansion becomes too large. ZnO has the effect of improving the chemical durability, but when it exceeds 10% by weight, the tendency of phase separation increases. B ₂ O ₃ has the effect of improving the meltability and lowering the viscosity, but when it exceeds 20% by weight, the tendency of phase separation increases. MgO, the optimal range of ZnO and B ₂ O _3, respectively 8 to 16 wt%, 1 to 5 wt%, and 1
１２12% by weight. However, MgO, ZnO and B
_The total amount of ₂ O ₃ is in the range of 10 to 30% by weight.

The glass as in the second example is disclosed in Japanese Patent Application Laid-Open No. 7-247134. Note that glass having a thermal expansion coefficient similar to that of silicon is generally commercially available, and the following products are available. (1) SD-1, SD-2 (manufactured by HOYA) These are obtained by matching the expansion curve (curve representing the change in the elongation rate of glass with respect to temperature) with silicon. S
The thermal expansion coefficient of D-1 is 31 × 10 ⁻⁷ / ° C., and the thermal expansion coefficient of SD-2 is 32 × 10 ⁻⁷ / ° C. (30 to 300).
° C). (2) PS-100 (made by HOYA) This is a translucent crystallized glass whose expansion curve matches that of silicon. Anodic bonding can be performed at a lower temperature than SD-2. (3) NA-35 (manufactured by HOYA) This is an aluminoborosilicate glass having an expansion coefficient almost equal to that of silicon, and does not contain alkali. Strain point is 650
° C, and there is almost no dimensional change even after a high temperature processing cycle. The coefficient of thermal expansion of NA-35 is 37 × 10 ^-7 / °
C (30-300 ° C.). (4) NA-40, NA-45 (manufactured by HOYA) Non-alkali glass having an expansion coefficient slightly larger than that of silicon. The coefficient of thermal expansion of NA-40 is 43 × 10 ^-7 / ° C.
(30 to 300 ° C.). The coefficient of thermal expansion of NA-45 is 46 × 10 ⁻⁷ / ° C. (30 to 300 ° C.). (5) LE-30 (manufactured by HOYA) This is a glass whose coefficient of expansion is slightly larger than that of silicon.
Good compatibility with membrane.

In preparing the glass wiring board of the present invention, an appropriate glass may be selected from the above-mentioned glasses according to the intended use. In the above embodiment, the bump-shaped electrode is used. However, the shape of the electrode is not necessarily required to be a bump. That is, a contact portion with an electrode of the IC may be flat like an electrode pad.

[0039]

As described above, in the glass wiring board of the present invention, since the electrodes are formed on the glass substrate, the height of the electrodes becomes constant, and the electronic components are mounted in the depressions of the glass substrate. An electronic component can be arranged at any position on the same surface as the electrodes. Therefore, if the electrodes of the glass substrate are connected to the electrodes of the integrated circuit, the electronic components can be arranged very close to the integrated circuit.

In the method of manufacturing a glass wiring board according to the present invention, a glass wiring board having an arbitrary electronic component disposed on the same surface as an electrode is manufactured in order to provide a depression in the glass substrate and mount an electronic component therein. be able to.

Further, in the probe card of the present invention, since the plurality of electrodes are formed on the glass substrate, the height of the electrodes is constant, and the discrete parts are provided in the depressions provided at predetermined positions on the glass substrate. Is mounted, a discrete component can be mounted near a predetermined electrode. Therefore, by simultaneously inspecting a wide range of integrated circuits formed on a wafer using this probe card, it is possible to perform a functional inspection using a high-frequency signal in a state where discrete components are arranged near the integrated circuit. Moreover, since the height of the electrodes is constant, the electrodes on the wafer can be reliably connected.

[Brief description of the drawings]

FIG. 1 is a partially enlarged view of a cross section of a glass wiring board of the present invention.

FIG. 2 is an overall view of a glass wiring board of the present invention.
(A) is a top view, (B) is XX sectional drawing of (A).

FIG. 3 is a diagram showing the first half of the manufacturing process of the glass wiring board.

FIG. 4 is a view showing the latter half of the manufacturing process of the glass wiring board.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 100 Glass wiring board 101 Glass substrate 102 Wiring 103 Photosensitive insulating material 111 Discrete parts 111a, 111b Electrode terminals 121, 122 Bump

Claims (10)

[Claims] 1. A glass wiring board for making an electrical connection with an integrated circuit, comprising: a glass substrate having a depression at a predetermined position on one surface; and an electronic component mounted in the depression of the glass substrate. A glass wiring substrate, comprising: an electrode formed on the same surface as the depression of the glass substrate; and a wiring for electrically connecting the electronic component and the electrode. 2. The glass wiring board according to claim 1, wherein said electrodes are projected in a bump shape. 3. The glass wiring substrate according to claim 1, wherein the glass substrate has a thermal expansion coefficient similar to that of silicon. 4. The glass wiring board according to claim 1, wherein the electronic component is a discrete component. 5. The glass wiring board according to claim 1, wherein a plurality of the electronic components are provided in the same plane. 6. A method of manufacturing a glass wiring board for making an electrical connection with an integrated circuit, comprising: forming a recess at a predetermined position on a glass substrate; And forming an electrode on the wiring outside the depression of the glass substrate, and mounting an electronic component on the wiring in the depression. Substrate manufacturing method. 7. The method for manufacturing a glass wiring board according to claim 6, wherein, when forming the electrode on the wiring, an electrode protruding in a bump shape is formed. 8. The method according to claim 6, wherein in the step of forming the depression, a substrate having a thermal expansion coefficient similar to that of silicon is used as the glass substrate. 9. A probe card for inspecting an integrated circuit formed on a wafer, comprising: a glass substrate having a plurality of depressions at predetermined positions on a surface to be opposed to a wafer to be inspected; A plurality of discrete components mounted in the recess, a plurality of glass substrate-side electrodes formed at positions to be matched with electrodes of a plurality of integrated circuits on the wafer to be inspected, and the discrete components and the glass substrate side A glass wiring board comprising: a wiring for electrically connecting the electrodes; and a probe card. 10. The glass wiring board according to claim 9, wherein the glass substrate-side electrode projects in a bump shape.