JPH1027951A - Wiring structure - Google Patents

Wiring structure

Info

Publication number
JPH1027951A
JPH1027951A JP18296996A JP18296996A JPH1027951A JP H1027951 A JPH1027951 A JP H1027951A JP 18296996 A JP18296996 A JP 18296996A JP 18296996 A JP18296996 A JP 18296996A JP H1027951 A JPH1027951 A JP H1027951A
Authority
JP
Japan
Prior art keywords
pads
pad
wiring
film substrate
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18296996A
Other languages
Japanese (ja)
Inventor
Kozo Yamanaka
弘三 山中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP18296996A priority Critical patent/JPH1027951A/en
Publication of JPH1027951A publication Critical patent/JPH1027951A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To realize reduction of manufacturing cost by obtaining a wiring structure in which wiring connection between ICs or an IC and I/O terminals can be performed under an optimum condition, so that electric signal characteristics are prevented from deteriorating, the wiring area is prevented from being expanded, the wiring density is prevented from being lowered, and the number of substrate layers is reduced. SOLUTION: In this structure, a plurality of IC pads 5 which are arrayed on optional positions in optional order is connected to a plurality of electrodes (W of IC3/B pad 7) which are arrayed on a predetermined position in a given order. In this case, a thin film substrate 21 which is provided with a plurality of backside pads, which are connected to respective IC pads 5, on the back surface thereof and front side pads 27, which conduct to the backside pads and are arrayed facing the electrodes (W of IC3/ B pad 7) in an optimum condition, on the front surface thereof, is provided, and the backside pad is connected to the IC pad 5, and the thin film substrate 21 is provided to an IC 1, meanwhile, the front side pad 27 of the thin film substrate 21 is connected to the electrode (W of IC3/B pad 7).

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、複数個の汎用IC
を実装した基板の該IC同士、又はICとI/O端子を
接続する配線構造に関するものである。
The present invention relates to a plurality of general-purpose ICs.
And a wiring structure for connecting the ICs or the ICs and I / O terminals of the substrate on which the IC is mounted.

【0002】[0002]

【従来の技術】多ピンの汎用ICを多層基板に複数個実
装し、小型で高密度な機能部品を作る場合がある。この
ような場合の従来の配線構造を図4に基づき説明する。
図4は二つのIC間の接続配線を四本の配線で代表して
表した従来の配線構造の平面図である。それぞれのIC
1、IC3において、ICパッド(電極)5の配列は異
なるものとなっている。IC1のICパッド5(A、
B、C、D)とIC3のICパッド5(A1、B1、C
1、D1)との接続は、それぞれのIC1、IC3にお
いてICパッド5とワイヤボンディング(W/B)パッ
ド7とをワイヤ9で接続し、W/Bパッド7を配線11
により電気的に接続(A−A1、B−B1、C−C1、
D−D1)していた。また、B−B1、C−C1のよう
に交差する接続は、バイアホール13により配線層を変
えることで、配線11間の電気的ショートを防止してい
た。
2. Description of the Related Art There are cases where a plurality of multi-pin general-purpose ICs are mounted on a multi-layer substrate to produce small, high-density functional components. A conventional wiring structure in such a case will be described with reference to FIG.
FIG. 4 is a plan view of a conventional wiring structure in which connection wiring between two ICs is represented by four wirings. Each IC
1. In IC3, the arrangement of IC pads (electrodes) 5 is different. IC pad 5 (A,
B, C, D) and the IC pad 5 of the IC 3 (A1, B1, C
1, D1), the IC pad 5 and the wire bonding (W / B) pad 7 in each of the IC 1 and IC 3 are connected by a wire 9 and the W / B pad 7 is connected to a wiring 11.
(A-A1, B-B1, C-C1,
DD). In addition, the crossing connection like B-B1 and C-C1 prevents the electrical short between the wirings 11 by changing the wiring layer by the via hole 13.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、上述し
た従来の配線構造では、ICパッド5の配列が、IC
1、IC3間の接続を行う配線11に対して、最短長
さ、交差する配線の数が最小(以下、このような条件を
「最適条件」という)でないため、配線11の引回しや
バイアホール13を用いて配線層を変えなければなら
ず、以下に述べる種々の不具合が発生することとなっ
た。即ち、配線長が長くなるため、電気信号の特性(遅
延時間、反射、損失等)が劣化する問題があった。ま
た、配線の引回しにより配線エリアが拡大し、小型化の
障害となった。また、バイアホール13が多用された場
合、バイアホール径が配線幅より大きいため、配線密度
が低下する問題があった。更に、交差する配線の数だけ
基板層数が必要となり、製造コストが高くなる問題があ
った。本発明は上記状況に鑑みてなされたもので、IC
間の配線接続を最適条件で行うことのできる配線構造を
提供し、電気信号特性の劣化防止、配線エリアの拡大防
止、配線密度の低下防止、基板層数の削減による製造コ
ストの低減を図ることを目的とする。
However, in the above-described conventional wiring structure, the arrangement of the IC pads 5 is
1. Since the shortest length and the number of intersecting wirings are not minimum (hereinafter, such conditions are referred to as “optimal conditions”) with respect to the wirings 11 for connection between the ICs 3, the wirings 11 are routed and via holes are not provided. 13, the wiring layer must be changed, and the various problems described below occur. That is, there is a problem that the characteristics (delay time, reflection, loss, etc.) of the electric signal are deteriorated because the wiring length is long. In addition, the wiring area expanded due to the routing of the wiring, which hindered miniaturization. In addition, when the via hole 13 is frequently used, the via hole diameter is larger than the wiring width, so that there is a problem that the wiring density is reduced. Further, there is a problem in that the number of substrate layers is required as many as the number of intersecting wirings, thereby increasing the manufacturing cost. The present invention has been made in view of the above circumstances,
To provide a wiring structure that can perform wiring connection between under optimal conditions, to prevent deterioration of electric signal characteristics, prevent expansion of wiring area, prevent reduction of wiring density, and reduce manufacturing cost by reducing the number of substrate layers. With the goal.

【0004】[0004]

【課題を解決するための手段】上記目的を達成するため
の本発明に係る配線構造の構成は、任意の位置で且つ任
意の順番で配列された複数のICパッドを所定位置で且
つ所定の順番で配列された複数の電極に接続する配線構
造において、それぞれの前記ICパッドに接続される複
数の裏側パッドを裏面に有するとともに該裏側パッドに
導通し前記電極に対して最適条件で配列された表側パッ
ドを表面に有する薄膜基板を具備し、前記裏側パッドを
前記ICパッドに接続して該薄膜基板をICに設ける一
方、該薄膜基板の表側パッドを前記電極に接続したこと
を特徴とするものである。
To achieve the above object, a wiring structure according to the present invention comprises a plurality of IC pads arranged in an arbitrary position and in an arbitrary order at a predetermined position and in a predetermined order. In the wiring structure connected to the plurality of electrodes arranged in the above, a plurality of backside pads connected to the respective IC pads are provided on the backside, and the front side electrically connected to the backside pads and arranged under the optimum condition with respect to the electrodes. A thin film substrate having a pad on the surface, wherein the back side pad is connected to the IC pad and the thin film substrate is provided on the IC, while a front side pad of the thin film substrate is connected to the electrode. is there.

【0005】このように構成した配線構造では、任意の
位置で且つ任意の順番でICパッドが配列されたIC
に、薄膜基板が設けられ、ICパッドが薄膜基板の裏側
パッドに接続されると、この裏側パッドに導通した表側
パッドが所定位置で且つ所定の順番で配列された複数の
電極に対して、それぞれが対向配置されることとなる。
即ち、任意の位置で且つ任意の順番で配列されたICパ
ッドが、薄膜基板を設けることで、所定位置で且つ所定
の順番で配列された複数の電極に対して、最適条件で配
列変更されることとなる。
In the wiring structure configured as described above, an IC in which IC pads are arranged at an arbitrary position and in an arbitrary order is provided.
When a thin film substrate is provided and the IC pad is connected to the back side pad of the thin film substrate, the front side pad electrically connected to the back side pad is placed at a predetermined position and in a predetermined order with respect to a plurality of electrodes, respectively. Are arranged to face each other.
That is, by providing the thin film substrate, the IC pads arranged at an arbitrary position and in an arbitrary order are rearranged under the optimum condition with respect to a plurality of electrodes arranged at a predetermined position and in an arbitrary order. It will be.

【0006】[0006]

【発明の実施の形態】以下、本発明に係る配線構造の好
適な実施の形態を図面を参照して詳細に説明する。図1
は本発明による配線構造の第一実施形態を示す平面図、
図2は図1のX−X断面図である。なお、図4に示した
部材と同一の部材には同一の符号を付し重複する説明は
省略するものとする。IC1(又は、IC3)の表面
(ICパッド5を形成した側の面)には、このIC1と
略同一外形の薄膜基板21をそれぞれ設けてある。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a wiring structure according to the present invention will be described below in detail with reference to the drawings. FIG.
Is a plan view showing a first embodiment of a wiring structure according to the present invention,
FIG. 2 is a sectional view taken along line XX of FIG. Note that the same members as those shown in FIG. 4 are denoted by the same reference numerals, and redundant description will be omitted. On the surface of IC1 (or IC3) (the surface on the side where IC pad 5 is formed), thin film substrates 21 having substantially the same outer shape as IC1 are provided.

【0007】図2に示すように、薄膜基板21の裏面
(ICパッド5と対向する側の面)には複数の裏側パッ
ド23を形成してあり、裏側パッド23はIC1(又
は、IC3)のICパッド5と同一配列で形成してあ
る。薄膜基板21は、裏側パッド23を半田バンプ25
によってICパッド5へ電気的に接続する。なお、裏側
パッド23は必ずしも全てのICパッド5に接続される
ものでなくとも良い。
As shown in FIG. 2, a plurality of back pads 23 are formed on the back surface of the thin film substrate 21 (the surface opposite to the IC pads 5), and the back pads 23 are formed of the IC 1 (or IC 3). It is formed in the same arrangement as the IC pad 5. The thin film substrate 21 is formed such that the back side pad 23 is
To electrically connect to the IC pad 5. The back pad 23 does not necessarily have to be connected to all the IC pads 5.

【0008】薄膜基板21の上面にはIC1とIC3と
を接続する上で、最適条件となる配列の表側パッド27
を形成してあり、この表側パッド27は所定の裏側パッ
ド23に薄膜配線29によってそれぞれ接続してある。
従って、IC1のICパッドAは薄膜基板21のA’、
BはB’、DはD’にそれぞれ接続されている。また、
IC3においては、ICパッドA1は薄膜基板21のA
1’、C1はC1’にそれぞれ接続されている。
On the upper surface of the thin film substrate 21, the front side pads 27 arranged in an optimum condition for connecting IC1 and IC3 are connected.
The front pad 27 is connected to a predetermined rear pad 23 by a thin film wiring 29.
Therefore, the IC pad A of the IC 1 is A ′ of the thin film substrate 21,
B is connected to B 'and D is connected to D'. Also,
In the IC3, the IC pad A1 is connected to the A
1 'and C1 are respectively connected to C1'.

【0009】薄膜基板21の表側パッド27は、ワイヤ
31を介してW/Bパッド7に電気的に接続してある。
従って、W/Bパッド7を介して接続の行われる表側パ
ッド27は、隣接するIC1、3の対向辺において、そ
れぞれ図1の下方側から同一順序でA’、D’、B’、
C’、及びA1’、D1、B1、C1’に配列されたも
のとなる。即ち、薄膜基板21を設けることにより、I
Cパッド5は最適条件で配列が変更されることとなる。
The front side pad 27 of the thin film substrate 21 is electrically connected to the W / B pad 7 via a wire 31.
Therefore, the front side pads 27 connected via the W / B pads 7 are arranged on the opposite sides of the adjacent ICs 1 and 3 in the same order from the lower side in FIG.
C ′, and those arranged in A1 ′, D1, B1, C1 ′. That is, by providing the thin film substrate 21, I
The arrangement of the C pads 5 is changed under optimum conditions.

【0010】上述の配線構造では、ICパッド5を最適
条件で配列変更したIC1とIC3とが、最短距離のW
/Bパッド7同士で、しかも、交差することなく直線配
線33によって電気的に接続(A’−A1’、D’−D
1、B’−B1、C’−C1’)されることとなる。
In the above-mentioned wiring structure, the IC 1 and the IC 3 in which the arrangement of the IC pads 5 has been changed under the optimum condition are the shortest distance W 1.
/ B pads 7 are electrically connected to each other by a straight wiring 33 without intersecting (A'-A1 ', D'-D
1, B'-B1, C'-C1 ').

【0011】このように、上述の配線構造によれば、最
適条件で配線33が行えるように、ICパッド5の配列
を配置変更する薄膜基板21を、IC1、3上に設けた
ので、IC1、3間を最短距離で接続することができ、
電気信号の特性を向上させることができる。また、配線
の引回しが少なくなり、狭い配線エリアでの配線が可能
となる。また、バイアホールの使用箇所を低減できるた
め、バイアパッドによる配線密度の低下を防止すること
ができる。更に、交差する配線数を少なくすることがで
きるため、基板層数が削減でき、製造コストを低減する
ことができる。
As described above, according to the above-described wiring structure, the thin-film substrate 21 for changing the arrangement of the IC pads 5 is provided on the ICs 1 and 3 so that the wirings 33 can be formed under optimum conditions. 3 can be connected with the shortest distance,
The characteristics of the electric signal can be improved. In addition, wiring routing is reduced, and wiring can be performed in a narrow wiring area. Further, since the number of via holes used can be reduced, it is possible to prevent a decrease in wiring density due to via pads. Further, since the number of intersecting wires can be reduced, the number of substrate layers can be reduced, and the manufacturing cost can be reduced.

【0012】次に、本発明による配線構造の第二実施形
態を図3に基づき説明する。図3は本発明による配線構
造の第二実施形態を示す平面図である。上述の第一の実
施形態はIC1、3同士を接続したのに対し、この実施
形態はIC41のICパッド5をI/O端子(電極)4
3に接続するものである。IC41の表面には、このI
C41と略同一外形の薄膜基板43をそれぞれ設けてあ
る。
Next, a second embodiment of the wiring structure according to the present invention will be described with reference to FIG. FIG. 3 is a plan view showing a second embodiment of the wiring structure according to the present invention. In the first embodiment described above, the ICs 1 and 3 are connected to each other. In this embodiment, the IC pad 5 of the IC 41 is connected to the I / O terminal (electrode) 4.
3 is connected. On the surface of the IC 41, this I
Thin film substrates 43 having substantially the same outer shape as C41 are provided.

【0013】薄膜基板43の裏面には複数の裏側パッド
23(図2参照)を形成してあり、裏側パッド23はI
C41のICパッド5と同一配列で形成してある。薄膜
基板43は、裏側パッド23を半田バンプ25(図2参
照)によってICパッド5へ電気的に接続する。
A plurality of back pads 23 (see FIG. 2) are formed on the back of the thin film substrate 43.
It is formed in the same arrangement as the IC pad 5 of C41. The thin film substrate 43 electrically connects the back pad 23 to the IC pad 5 by the solder bump 25 (see FIG. 2).

【0014】薄膜基板43の上面にはIC41とI/O
端子44とを接続する上で、最適条件となる配列の表側
パッド27を形成してあり、この表側パッド27は所定
の裏側パッド23に薄膜配線29によってそれぞれ接続
してある。従って、IC41のICパッドAは薄膜基板
43のA’、CはC’にそれぞれ接続されている。
On the upper surface of the thin film substrate 43, an IC 41 and an I / O
In connection with the terminals 44, front-side pads 27 are formed in an arrangement that satisfies the optimum conditions. The front-side pads 27 are connected to predetermined rear-side pads 23 by thin-film wirings 29, respectively. Therefore, the IC pad A of the IC 41 is connected to A 'of the thin film substrate 43, and the C is connected to C' of the thin film substrate 43, respectively.

【0015】薄膜基板43の表側パッド27は、ワイヤ
31を介してW/Bパッド7に電気的に接続してある。
従って、W/Bパッド7を介して接続の行われる表側パ
ッド27は、対向するI/O端子44(A1、B1、C
1、D1)に対して、A’、B、C’、Dに配列された
ものとなる。即ち、薄膜基板43を設けることにより、
ICパッド5はI/O端子44に対して最適条件で配列
が変更されることとなる。
The front side pad 27 of the thin film substrate 43 is electrically connected to the W / B pad 7 via a wire 31.
Therefore, the front side pad 27 connected via the W / B pad 7 is connected to the opposing I / O terminal 44 (A1, B1, C2).
1, D1), are arranged in A ', B, C', D. That is, by providing the thin film substrate 43,
The arrangement of the IC pads 5 is changed with respect to the I / O terminals 44 under optimum conditions.

【0016】上述の配線構造では、ICパッド5を最適
条件で配列変更したIC41がI/O端子44と最短距
離で、しかも、交差することなく配線45によって電気
的に接続(A’−A1’、B−B1、C’−C1、D−
D1)されることとなる。
In the above-described wiring structure, the IC 41 in which the arrangement of the IC pads 5 is changed under the optimum condition is electrically connected to the I / O terminal 44 by the wiring 45 at the shortest distance and without intersecting (A'-A1 '). , B-B1, C'-C1, D-
D1).

【0017】この実施形態による配線構造によれば、上
述の第一の実施形態による配線構造と同様に、IC41
とI/O端子44との接続において、IC41とI/O
端子44との間を最短距離で接続することができ、電気
信号の特性を向上させることができるとともに、配線の
引回しが少なくなり、狭い配線エリアでの配線が可能と
なる。また、バイアホールの使用箇所を低減できるた
め、配線密度の低下を防止することができるとともに、
交差する配線数を少なくすることができるため、基板層
数が削減でき、製造コストを低減することができる。
According to the wiring structure of this embodiment, the IC 41 is similar to the wiring structure of the first embodiment.
In connection between the IC 41 and the I / O terminal 44,
The connection with the terminal 44 can be made with the shortest distance, the characteristics of the electric signal can be improved, the wiring can be reduced, and the wiring can be performed in a narrow wiring area. Also, since the number of via holes used can be reduced, it is possible to prevent a decrease in wiring density,
Since the number of intersecting wires can be reduced, the number of substrate layers can be reduced, and the manufacturing cost can be reduced.

【0018】[0018]

【発明の効果】以上詳細に説明したように、本発明に係
る配線構造によれば、ICパッドに接続される裏側パッ
ドを裏面に有するとともに、この裏側パッドに導通し電
極に対して最適条件で配列された表側パッドを表面に有
する薄膜基板を具備し、裏側パッドをICパッドに接続
して薄膜基板をICに設けたので、任意の位置で且つ任
意の順番で配列されたICパッドを、所定位置で且つ所
定の順番で配列された複数の電極に対して、最適条件で
配列変更することができる。この結果、ICパッドと電
極との間を最短距離で接続することができ、電気信号の
特性を向上させることができるとともに、狭い配線エリ
アでの配線が可能となる。また、バイアホールの使用箇
所を低減できるため、バイアパッドによる配線密度の低
下を防止することができるとともに、基板層数が削減で
き、製造コストを低減することができる。
As described above in detail, according to the wiring structure of the present invention, the backside pad connected to the IC pad is provided on the backside, and the backside pad is electrically connected to the electrode under the optimum condition. Since the thin-film substrate having the arranged front-side pads on the surface is provided, and the back-side pads are connected to the IC pads and the thin-film substrate is provided on the IC, the IC pads arranged in an arbitrary position and in an arbitrary order can be arranged in a predetermined manner. With respect to a plurality of electrodes arranged at a position and in a predetermined order, the arrangement can be changed under optimum conditions. As a result, the connection between the IC pad and the electrode can be made with the shortest distance, the characteristics of the electric signal can be improved, and the wiring can be performed in a narrow wiring area. In addition, since the number of via holes can be reduced, it is possible to prevent a decrease in wiring density due to via pads, to reduce the number of substrate layers, and to reduce manufacturing costs.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明による配線構造の第一実施形態を示す平
面図である。
FIG. 1 is a plan view showing a first embodiment of a wiring structure according to the present invention.

【図2】図1のX−X断面図である。FIG. 2 is a sectional view taken along line XX of FIG.

【図3】本発明による配線構造の第二実施形態を示す平
面図である。
FIG. 3 is a plan view showing a second embodiment of the wiring structure according to the present invention.

【図4】二つのIC間の接続配線を四本の配線で代表し
て表した従来の配線構造の平面図である。
FIG. 4 is a plan view of a conventional wiring structure in which connection wiring between two ICs is represented by four wirings.

【符号の説明】[Explanation of symbols]

1、3 IC 5 ICパッド
(電極) 21 薄膜基板 23 裏側パッ
ド 27 表側パッド 44 I/O端
子(電極)
1, 3 IC 5 IC pad (electrode) 21 Thin film substrate 23 Back pad 27 Front pad 44 I / O terminal (electrode)

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 任意の位置で且つ任意の順番で配列され
た複数のICパッドを所定位置で且つ所定の順番で配列
された複数の電極に接続する配線構造において、 それぞれの前記ICパッドに接続される複数の裏側パッ
ドを裏面に有するとともに該裏側パッドに導通し前記電
極に対して最適条件で配列された表側パッドを表面に有
する薄膜基板を具備し、 前記裏側パッドを前記ICパッドに接続して該薄膜基板
をICに設ける一方、該薄膜基板の表側パッドを前記電
極に接続したことを特徴とする配線構造。
1. A wiring structure for connecting a plurality of IC pads arranged at an arbitrary position and in an arbitrary order to a plurality of electrodes arranged at a predetermined position and in an predetermined order, wherein each of the IC pads is connected to each of the IC pads. A thin film substrate having a plurality of back side pads on the back side and a front side pad on the front side, which is electrically connected to the back side pads and arranged on the surface under the optimum conditions with respect to the electrodes, wherein the back side pads are connected to the IC pads. Wherein the thin-film substrate is provided on an IC while a front-side pad of the thin-film substrate is connected to the electrode.
【請求項2】 前記電極は、 異なるICのICパッドであることを特徴とする請求項
1記載の配線構造。
2. The wiring structure according to claim 1, wherein said electrodes are IC pads of different ICs.
【請求項3】 前記電極は、 I/O端子であるであることを特徴とする請求項1記載
の配線構造。
3. The wiring structure according to claim 1, wherein said electrode is an I / O terminal.
JP18296996A 1996-07-12 1996-07-12 Wiring structure Pending JPH1027951A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18296996A JPH1027951A (en) 1996-07-12 1996-07-12 Wiring structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18296996A JPH1027951A (en) 1996-07-12 1996-07-12 Wiring structure

Publications (1)

Publication Number Publication Date
JPH1027951A true JPH1027951A (en) 1998-01-27

Family

ID=16127494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18296996A Pending JPH1027951A (en) 1996-07-12 1996-07-12 Wiring structure

Country Status (1)

Country Link
JP (1) JPH1027951A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022522941A (en) * 2019-01-07 2022-04-21 ベイジン・ノースランド・バイオテック・カンパニー・リミテッド Human hepatocyte growth factor mutants and their use

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022522941A (en) * 2019-01-07 2022-04-21 ベイジン・ノースランド・バイオテック・カンパニー・リミテッド Human hepatocyte growth factor mutants and their use

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