JPH1027935A - Semiconductor light emitting device and method of fabricating the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To fabricate a ridge waveguide semiconductor laser by a simple process. SOLUTION: On an n-Inp substrate 101, an n-InGaAsP waveguide layer 102, a multi-quantum well active layer 103 constructed by an InGaAsP well layer and an InGaAsP barrier layer, a p-InGaAsP waveguide layer 104, and a p-InP cap layer 105 are sequentially epitaxial grown by using the metal organic vapor phase epitaxial growth method, thereby forming a semiconductor multilayer structure. An SiO2 film is deposited on the p-InP cap layer 105 by the CVD and is patterned. An insulating film mask 106 is formed by wet etching. On the n-InP substrate 101 provided with the insulating film mask 106, a p-InP cladding layer 107 and a p-InGaAs contact layer 108 are sequentially epitaxial grown. Further, the p-InP cladding layer 107 and the p-InGaAs contact layer 108 are grown only in a region of the opening part of the mask. Consequently, the ridge waveguide semiconductor laser is automatically formed. In the method of fabricating the laser, since the width of the ridge can be accurately specified, ridge formation with high uniformity can be realized.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device and a method for manufacturing the same, and more particularly, to a device and a method for manufacturing the same which can be easily manufactured using selective growth.

[0002]

2. Description of the Related Art In recent years, the demand for semiconductor lasers has increased in the fields of optical communication, laser printers, optical disks, and the like.
Research and development have been actively pursued centering on the system and the InP system. In the optical communication field, the wavelength is especially 155.
Optical communication using light from an InP-based semiconductor laser of 0 nm has been put to practical use, and research and development for ultrahigh-speed and large-capacity optical communication are being actively conducted.

A conventional semiconductor device manufacturing method using selective growth is disclosed in Japanese Patent Application Laid-Open No. 6-260727. According to this method, the thickness of the multiple quantum well layer (MQW layer) grown in the opening region is changed by changing the width of the opening region between the insulating film masks, and the band gap energy is changed by the difference in the width of the opening region. It is to make a difference. Japanese Patent Application Laid-Open No. Hei 8-139417 discloses a method in which the width of an opening region is made constant and MQW layers having different band gaps are formed in regions having different widths of an insulating film mask.

As described above, researches on manufacturing an optical device using selective growth have been actively conducted. In particular, a method for manufacturing a semiconductor laser using this selective growth is described in IEEE P.
HOTONICS TECHNOLOGY LETTERS, VOL8, NO2, pp179〜181,19
96. This method will be described with reference to FIG. p-type InP buffer layer 5 on p-type InP substrate 501
02, a SiO2 mask 506 having an opening having a width of 1.5 microns is formed, and a first InGaAs is formed in the opening.
P light confinement layer 503, InGaAs with compressive strain
MQW comprising P quantum well layer and InGaAsP barrier layer
The layer 504 and the second InGaAsP light confinement layer 505 are selectively grown.

Next, an SiO 2 mask 506 on the buffer layer
Is removed, SiO2507 is further formed on the ridge-shaped optical confinement structure, and p-InP508, n is formed on the buffer layer using this SiO2507 as a mask for selective growth.
After growing a current blocking layer of -InP 509 and p-InP 510 and removing the SiO2 mask 507, n-
An InP cladding layer 511 and an n-InGaAsP cap layer 512 are grown, and finally an n-type electrode 513 is formed.

In this method, a semiconductor crystal is grown using selective growth. However, when a SiO2 film is formed on a ridge, a method as shown in FIG. 6 is used. That is, after forming the SiO2 film 606 on the entire surface including the ridge, the SiO2 film on the side surface of the ridge is first removed. This is because the SiO2 film on the side surface is thinner than the other portions of the film. Thereafter, a photoresist 620 is formed so as to cover the SiO 2 film 607 on the ridge, and a buffer layer 6 is formed.
02 has been removed.

According to this method, a laser can be manufactured without etching a semiconductor layer by using selective growth. However, in order to leave the SiO 2 film 607 only on the ridge, the entire surface of the SiO 2 film 606 is etched to form a side surface of the ridge. S
Only the iO2 film is removed. In this case, it is difficult to control the etching. This is because if the etching time is abbreviated, the SiO2 film on the ridge and the SiO2 on both sides of the ridge are etched away. Therefore, such a method is difficult to control etching and is not suitable for mass production.

Also, when removing the SiO2 film on both sides of the ridge, as shown in FIG. 6C, a resist mask 620 is formed so as to cover the ridge, and the SiO2 film on both sides of the ridge is formed by side etching. Has been removed. In this method, the SiO2 film may remain without being completely removed during the side etching. In this case, no crystal grows on the insulating film at the time of the buried growth of the semiconductor crystal after the etching, so that the buried layer cannot be formed accurately and the laser characteristics are deteriorated.

On the other hand, a ridge waveguide type laser having a loading layer formed on an active layer is disclosed in Japanese Patent Application Laid-Open No. Hei 8-116124. This laser modulates the width of the ridge portion, emits a laser having a widened spot from the end face having the smaller ridge width, and optically couples the laser with the fiber with high efficiency.

[0010]

However, when manufacturing the ridge waveguide type laser, a semiconductor layer serving as a ridge is first grown on the active layer, and then a mask is selectively formed on the semiconductor layer. Then, the semiconductor layer is selectively removed by wet etching to form a stripe-shaped ridge waveguide. In this forming method, since the ridge waveguide is formed by wet etching,
The ridge width is not uniform, and the ridge width varies depending on the device within the wafer surface, so that the laser characteristics also vary.

After the side surfaces of the ridge are further buried with a polyimide resin, SiO2 is formed to form a contact electrode.
Opening the window of the insulation film. For this reason, a process for forming a contact electrode is required, and alignment between the ridge portion and the window is also required, which may cause a decrease in yield.

It is an object of the present invention to provide a semiconductor light emitting device in which a ridge waveguide is formed without using etching and a process for forming a contact electrode is easy, and a method of manufacturing the same.

[0013]

As an optical device of the present invention, a waveguide, a semiconductor laser, an integrated device in which a semiconductor laser and an optical modulator, an optical waveguide are integrally formed, and the like can be considered.

When the optical device of the present invention is a semiconductor laser, the device comprises an active layer and a ridge-shaped semiconductor layer provided on the active layer, and is provided on both sides of the ridge-shaped semiconductor layer on the active layer. The structure is such that an insulating film is formed. With this configuration, since there is an insulating film, the electrodes can be formed in solid,
A device can be manufactured by a simple process without requiring a process for forming an electrode.

When a distributed feedback laser is used as a semiconductor laser, a distributed feedback semiconductor laser having a ridge waveguide structure can be easily formed by providing a diffraction grating on a substrate.

Furthermore, a device in which a ridge waveguide type semiconductor laser and an optical modulator are integrated can be easily manufactured. According to this manufacturing method, the semiconductor layer can be easily formed without etching by using the selective growth twice. In the first selective growth, an insulating film for selective growth is used in a region to be a laser, and a semiconductor multilayer film having a laser structure is grown in an opening region of the insulating film. At that time, since the semiconductor multilayer film is simultaneously grown in a region wider than the opening region in the region to be the optical modulator, the thickness of the multiple quantum well layer of the semiconductor multilayer film differs between the laser region and the modulator region. Since the thickness of the multiple quantum well layer in the laser region is larger than the thickness of the multiple quantum well layer in the optical modulator region and the band gap becomes smaller even with the same composition, light from the laser region is transmitted to the modulator region. Even if propagated, the laser light is hardly absorbed in the modulator region. By applying a reverse bias to the electrode of the optical modulator to modulate the laser light, it can be used as a light source for high-speed optical communication.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS.

(Embodiment 1) A ridge waveguide type semiconductor laser is easier to manufacture than a buried type semiconductor laser, and has no leakage current to a buried layer which is peculiar to a buried type semiconductor laser. It is excellent in high temperature and high output operation. So first,
Examples of the structure of the ridge waveguide type semiconductor laser will be described below.

As shown in FIG. 1A, on an n-InP substrate 101,
500 nm thick n-InGaAsP optical waveguide layer 102, 6 nm thick InGaAs
A multiple quantum well active layer 103 composed of five pairs of a P well layer and a 10 nm thick InGaAsP barrier layer, a 500 nm thick p-InGaAsP optical waveguide layer 104, and a 0.1 μm thick p-InP cap layer 105 are formed of an organic metal. A semiconductor multilayer structure is formed by sequentially performing epitaxial growth using a vapor phase growth method.

In FIG. 1 (b), an insulating film such as SiO2 or SiNx is deposited on the p-InP cap layer 105 by a CVD method, and the insulating film is patterned so that the stripe is oriented in the <011> direction of the n-InP substrate. Then, an insulating film mask 106 is formed by a wet etching process. Here, the width of the mask opening, which is the growth region, is 3 μm. This is because of the low threshold characteristics equivalent to buried semiconductor lasers or n-In
Considering the single mode characteristic when applying to a distributed feedback (DFB) type laser with a diffraction grating on the P substrate 1, 3 μm
And

In FIG. 1C, a 1.5 μm-thick p-InP cladding layer 10 is formed on an n-InP substrate 101 provided with an insulating film mask 106.
7. A p-InGaAs contact layer 108 having a thickness of 0.1 μm is sequentially epitaxially grown by using a metal organic chemical vapor deposition method. Figure
Fig. 2 shows the growth rate characteristics of the growth thickness of InP.The growth rate during the growth of the p-InP cladding layer 7 is about 9 times that of the p-InP cap layer 105. went. Therefore, the growth time can be shortened.

Further, as shown in FIG. 2C, the ridge waveguide type semiconductor laser is automatically formed because the p-InP cladding layer 107 and the p-InGaAs contact layer 108 are grown only in the region of the mask opening. Is formed. In the process of a normal ridge waveguide type semiconductor laser, a ridge waveguide is formed by wet etching.
In the present invention, as shown in FIG. 1C, the p-InP cladding layer 107 and the p-InGaAs contact layer 108 are automatically formed in a shape along the (111) B plane where crystal growth is difficult to be performed. Is done.
That is, since the width of the ridge can be accurately defined by the width of the opening, compared to the formation of the ridge waveguide by wet etching, the ridge can be formed with less variation in the wafer surface and high uniformity.

Furthermore, since the insulating film mask 106 not only forms a ridge waveguide, but also the insulating film mask 6 itself functions as a current blocking layer, there is no need to open an electrode forming window by a photo process. Therefore, the process becomes easy, and at the same time, it is possible to prevent the active region from being exposed to the surface in the process, so that the uniformity of the laser characteristics is further improved, and high yield and high reliability can be expected.

In FIG. 1D, the insulating film mask 106, p-InG
On the aAs contact layer 108, a p-type electrode mainly composed of a Pt layer and a Ti layer is formed. In this case, a metal multilayer film composed of a Pt layer, a Ti layer, and a Pt layer was sequentially deposited to form the p-type electrode 109. However, in consideration of the adhesion between the insulating film mask 106 and the Pt layer, the insulating film mask 106 was used. The structure is such that a Ti layer 110 is sandwiched between the Pt layer and the Pt layer. Further, a metal multilayer film 111 composed of a Ti layer and an Au layer is deposited on the entire surface, and finally, an Au layer, a Sn layer, and a C layer are formed on the n-InP substrate 101.
An n-type electrode 112 composed of an r layer, a Pt layer, and an Au layer is formed.

With the above structure, the p-InP cladding layer 10
7. By using the selective growth technique for growing the p-InGaAs contact layer 108, a semiconductor laser having a ridge waveguide can be automatically manufactured. Further, since the p-InP cladding layer 107 and the p-InGaAs contact layer 108 are automatically formed in a shape along the (111) B plane where crystal growth is difficult to occur, the ridge waveguide is formed by wet etching. The ridge can be formed with better controllability and uniformity.

Further, in FIG. 1D, the insulating film mask 106 is used as a current blocking layer. However, since the quantum well active layer 103 and the insulating film mask 106 are close to each other, the insulating film mask 106 is used.
Is considered to affect the crystallinity of the quantum well active layer 103, and there is a concern that the reliability or the like may deteriorate. For this reason, forming the current blocking layer from a semiconductor rather than an insulating film makes it possible to provide a device with higher reliability. Specific examples are shown in FIGS. 1 (e) and 1 (f).

First, in FIG. 1 (e), an n-InGaAsP optical waveguide layer 102 having a thickness of 500 nm and an
A multiple quantum well active layer 103 composed of five pairs of a GaAsP well layer and a 10 nm thick InGaAsP barrier layer, a 500 nm thick p-InGaAsP optical waveguide layer 104, and a 0.1 μm thick p-InP cap layer 105 are grown. Further, a semi-insulating -InP layer is epitaxially grown thereon. Further, an insulating film mask 106 is formed on the semi-insulating-InP layer 105 in the same manner as in FIG.

In FIG. 1 (f), the semi-insulating-I
Of the nP layer 105, the semi-insulating -InP
The layer 105 is removed by etching, and thereafter, the p-InP cladding layer 107 and the p-InGaAs contact layer 108 are sequentially epitaxially grown by using a metal organic chemical vapor deposition method. next,
After the insulating film mask 106 was removed by wet etching, the p-type electrode 109 and the n-type electrode 112 were formed as shown in FIG. A ridge waveguide type semiconductor laser can be manufactured. Also in this case, the p-InP cladding layer 107 and the p-InGaAs contact layer 108 are automatically formed in a shape along the (111) B plane where crystal growth is difficult to be performed, so that controllability and uniformity are improved. A ridge can be formed. Therefore, the uniformity of the laser characteristics is improved, and a high yield and high reliability can be achieved.

The current blocking layer is made of semi-insulating-I
Although the nP layer 105 is used, a similar effect can be obtained by using a pnp-InP buried structure.

Further, as shown in FIGS. 1 (g) and 1 (h), a distributed feedback (DFB) type semiconductor laser in which a diffraction grating is provided on an n-InP substrate has the same effect. In particular, since the ridge waveguide structure can be formed uniformly and accurately, there is almost no variation in threshold current caused by variation in the width of the ridge waveguide. Therefore, the single mode operation due to the variation in the threshold current, which is a significant problem in the DFB laser, is not stopped. In other words, even in the same wafer, there is almost no variation in the threshold value, the laser that operates in a single mode and the laser that operates in a single mode hardly coexist, and the yield can be improved.

(Embodiment 2) Next, a DF, which is attracting attention as a light source device for an ultra-high-speed, long-distance transmission system, will be described.
An embodiment of the present invention for a B laser and an optical modulator integrated light source will be described below.

As shown in FIG. 3A, on an n-InP substrate 301,
As the region where the semiconductor substrate is exposed (mask opening region) is different between the region (a) where the diffraction grating is formed in the optical waveguide direction and the region (b) where the diffraction grating is not formed, in the region (a), SiO2,
A patterning mask made of a SiNx insulating film is formed.
3 (f) and 3 (g) show views as viewed from above the substrate 301. FIG. In (f), it can be seen that a diffraction grating is formed in the laser region. Then, as in (g),
SiO having a stripe-shaped opening region in the laser region
Two insulating films 300 are formed.

Next, a 500 nm thick n-InGaAsP optical waveguide layer 302, a 4 nm thick InGaAs well layer and a 10 nm thick InGaAsP
Multiple quantum well active layer 303 consisting of 7 pairs of barrier layers, thickness
500 nm p-InGaAsP optical waveguide layer 304, and 0.1 μm thick p
-The InP cap layer 305 is sequentially epitaxially grown by using a metal organic chemical vapor deposition method to form a semiconductor multilayer structure.
In the two regions a and b having different mask widths and mask opening widths, quantum well structures having different thicknesses and compositions of well layers and barrier layers are automatically formed. For this reason, the quantum levels of the quantum well structure are different between the two regions (a) and (b), whereby an optical waveguide structure having a band gap that is equivalently different in the optical waveguide direction can be obtained. FIG. 3B is a cross-sectional view in the resonator direction (xx * direction).

In the region (a), the width of the insulating film patterning mask is 25 μm, the width of the mask opening (growing region) is 20 μm, and in the region (b), no insulating film patterning mask is provided. FIG. 4 shows the relationship between the mask width and the quantum well emission wavelength. Although the experimental results were obtained with the mask opening width kept constant at 20 μm, in the present embodiment, the quantum well emission wavelength was 1.47 when the mask width was 0 μm (when no mask was provided).
When set to μm, 1.55μ at a mask width of 25μm
The quantum well emission wavelength of m was set from the experimental results obtained.

Next, in the same manner as in Example 1, as shown in FIG. 3 (c), SiO2 was deposited on the p-InP cap layer 305 by CVD.
An insulating film such as SiNx is deposited, and the insulating film is patterned so that the stripe is oriented in the <011> direction of the n-InP substrate to form an insulating film mask 306.

Thereafter, as shown in FIG.
On an n-InP substrate 301 provided with 306, a p-InP cladding layer 307, p
-InGaAs contact layer 308 is sequentially grown epitaxially by using a metal organic chemical vapor deposition method. P-InP cladding layer 307, p-InGaAs contact layer 308 only in the mask opening area
The ridge waveguides of the DFB laser and the optical modulator are formed automatically, respectively. Moreover, the embodiment
As in 1, the p-InP cladding layer 307 and p-InGaAs contact layer 308 are automatically formed in a shape along the (111) B plane where crystal growth is difficult to occur. DFB with better controllability and uniformity than wave path formation
The ridge between the laser and the optical modulator can be formed.

Finally, in FIG. 2E, the p-InGaAs contact layer 108 between the DFB laser and the optical modulator is removed by wet etching to separate the electrodes of the DFB laser and the optical modulator. A p-type electrode mainly composed of a Pt layer and a Ti layer is formed on the mask 306 and the p-InGaAs contact layer 308. In this case, a p-type electrode was formed by sequentially depositing a metal multilayer film composed of a Pt layer, a Ti layer, and a Pt layer. However, in consideration of the adhesion between the insulating film mask 306 and the Pt layer 310, the insulating film mask 30 was formed.
A p-type electrode was formed by sandwiching a Ti layer 310 between 6 and the Pt layer. Finally, an n-type electrode 311 including an Au layer, a Sn layer, a Cr layer, a Pt layer, and an Au layer is formed on the n-InP substrate 301.

As described above, since a SiO2 film mask is formed on a substrate on which a diffraction grating is formed, and a laser region and a region serving as an optical modulator can be simultaneously formed by one-time crystal growth by selective growth, the laser and the optical modulation can be formed. It is much easier to manufacture than when the container is made separately. Further, the loss due to the scattering of the laser light at the boundary between the laser region and the optical modulator is small, and the characteristics are improved.

Further, a ridge waveguide can be formed simultaneously in the laser region and the optical modulator region. As described in the first embodiment, the ridge waveguide can accurately define the width of the ridge by the width of the opening. Therefore, compared to the formation of the ridge waveguide by wet etching, there is less variation in the wafer surface and uniformity. Ridge formation with a high level is possible. In particular, in this embodiment, since the laser and the optical modulator are integrally formed, it is important that the ridge waveguide width is constant over the laser region and the optical modulator region. That is, since the ridge waveguide width is constant, the laser light in the single transverse mode in the laser region can propagate to the optical modulator region in the single transverse mode. Therefore, since this integrated light source can be coupled to a single mode fiber, it is possible to realize ultra-high speed and large capacity optical communication over a long distance.

Third Embodiment As a third embodiment, a semiconductor laser in which the spot size is increased by modulating the film thickness of the ridge waveguide layer of the ridge waveguide type semiconductor laser to increase the coupling efficiency with the fiber will be described. I do.

The structure is almost the same as FIGS. 1 (f) and 1 (h). The difference is that the thickness of the ridge waveguide layer is not constant, but becomes thicker (thinner) with a constant inclination from the end face to the other end face.

In order to form such a ridge waveguide layer, a SiO 2 film mask for selective growth is used as shown in FIG. In other words, the opening area of the SiO2 mask is not fixed, and the width of one end of the opening area is 1 micron and the width of the other end is 8 microns here. FIG. 1 shows such a mask.
By using instead of the insulating mask 106 of (b),
The thickness of the semiconductor crystal growing in the opening region changes.
At point X where the width of the opening region is large, the thickness of the ridge waveguide layer is small and is about 0.5 μm. At point Y where the width of the opening region is small, the thickness of the ridge waveguide layer is 3 μm. Has become. The laser light is emitted from the end face at point X where the film thickness of the ridge waveguide layer is small. Thereby, it is possible to manufacture a semiconductor laser that emits a laser beam having a wide spot diameter.

[0043]

As described above, according to the present invention, the width of the ridge can be accurately defined by the width of the opening of the ridge waveguide. It is possible to manufacture a waveguide type laser capable of forming a ridge with high uniformity without variation.

In the integrated light source, a ridge waveguide is simultaneously provided in the laser region and the optical modulator region, and
Since they are integrally formed, the laser light of the single transverse mode in the laser region can propagate to the optical modulator region in the single transverse mode by keeping the ridge waveguide width constant. Therefore, since this integrated light source can be coupled to a single mode fiber, it can be used for ultra-high speed over long distances,
Large capacity optical communication can be realized.

[Brief description of the drawings]

FIG. 1 is a perspective view of a manufacturing process of a ridge waveguide type semiconductor laser of the present invention.

FIG. 2 is an explanatory diagram relating to a growth film thickness increase rate characteristic of InP.

FIG. 3 is a perspective view and a sectional view of a manufacturing process of a ridge waveguide type DFB laser and an optical modulator integrated light source of the present invention.

FIG. 4 is an explanatory diagram relating to the mask width dependence of the quantum well emission wavelength.

FIG. 5 is a process sectional view of a conventional semiconductor laser.

FIG. 6 is a process cross-sectional view for explaining a conventional semiconductor laser etching process.

FIG. 7 is a plan view of a mask used for manufacturing a semiconductor laser of the present invention and a diagram showing a change in film thickness when the mask is used.

[Explanation of symbols]

 101 n-InP substrate 102 n-InGaAsP optical waveguide layer 103 multiple quantum well active layer 104 p-InGaAsP optical waveguide layer 105 p-InP cap layer 106 insulating film mask 107 p-InP cladding layer 108 p-InGaAs contact layer 109 p-type Electrode 110 Ti layer 111 metal multilayer film 112 n-type electrode 113 semi-insulating-InP layer 114 diffraction grating 301 n-InP substrate 302 n-InGaAsP optical waveguide layer 303 multiple quantum well active layer 304 p-InGaAsP optical waveguide layer 305 p- InP cap layer 306 Insulating film mask 307 p-InP cladding layer 308 p-InGaAs contact layer 309 p-type electrode 310 Ti layer 311 n-type electrode

Claims (13)

[Claims] 1. A semiconductor light emitting device comprising: an active layer; and a ridge waveguide layer provided on the active layer, wherein insulating films are formed on both sides of the ridge waveguide layer on the active layer. 2. The semiconductor light emitting device according to claim 1, wherein an electrode is formed on said insulating film and said ridge. 3. The semiconductor light emitting device according to claim 1, wherein said electrode is formed on the entire surface of said ridge waveguide layer. 4. The semiconductor light emitting device according to claim 1, wherein a diffraction grating is formed on the substrate. 5. A step of epitaxially growing a multiple quantum well active layer over the entire surface of the substrate, a step of forming an insulating film having an opening on the active layer, and a step of selectively growing a ridge waveguide layer in the opening. A method for manufacturing a semiconductor light emitting device having: 6. The method according to claim 5, further comprising the step of forming an electrode on the entire surface of the ridge waveguide layer. 7. A semiconductor laser region having a substrate, an insulating film having an opening provided on the substrate, and a semiconductor multilayer film including an active layer formed in the opening, An optical modulator region having a semiconductor multilayer film formed on an adjacent region and formed simultaneously with the laser region is provided on the same substrate, and a ridge waveguide having substantially the same width over the laser region and the modulator region. A semiconductor light emitting device on which a layer is formed. 8. A distributed substrate type semiconductor laser region comprising: a diffraction grating; an insulating film having an opening provided on the diffraction surface; and a semiconductor multilayer film including an active layer formed in the opening. An optical modulator region having a semiconductor multilayer film formed at the same time as the laser region formed on a region where a diffraction grating is not formed is provided on the same substrate, and is substantially the same across the laser region and the modulator region. A semiconductor light emitting device in which a ridge waveguide layer having a width is formed. 9. An active layer in the laser region has a multiple quantum well structure, and the optical modulator region has the same multiple quantum well structure as the active layer in the laser region.
Or the semiconductor light emitting device according to 8. 10. A step of forming a first selective growth film having an opening region in a region where a semiconductor laser is to be formed on a substrate, and including a multiple quantum well layer in the region where a light modulator is to be formed and the opening region of the substrate. Selectively growing a semiconductor multilayer film, forming a second selective growth film having a stripe-shaped opening region from the laser formation scheduled region to the optical modulator region on the semiconductor multilayer film, 2
Selectively growing a ridge waveguide layer in an opening region of the selective growth film. 11. The method according to claim 10, further comprising the step of forming an electrode on the entire surface of the ridge waveguide layer in the semiconductor formation region. 12. The method of manufacturing a semiconductor light emitting device according to claim 10, wherein a diffraction grating is formed on the substrate in the region where the semiconductor laser is to be formed. 13. The method according to claim 1, wherein the width of the ridge waveguide layer is a width in which a single transverse mode oscillation is operated.
10. The semiconductor light emitting device according to any one of items 9 to 9.