JPH10256196A - Marking method at beveling part of wafer - Google Patents

Marking method at beveling part of wafer

Info

Publication number
JPH10256196A
JPH10256196A JP9055993A JP5599397A JPH10256196A JP H10256196 A JPH10256196 A JP H10256196A JP 9055993 A JP9055993 A JP 9055993A JP 5599397 A JP5599397 A JP 5599397A JP H10256196 A JPH10256196 A JP H10256196A
Authority
JP
Japan
Prior art keywords
wafer
groove
polishing
mark
crystal orientation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9055993A
Other languages
Japanese (ja)
Inventor
Hiroshi Oishi
弘 大石
Shiyuubin Minami
秀旻 南
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Super Silicon Crystal Research Institute Corp
Original Assignee
Super Silicon Crystal Research Institute Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Super Silicon Crystal Research Institute Corp filed Critical Super Silicon Crystal Research Institute Corp
Priority to JP9055993A priority Critical patent/JPH10256196A/en
Publication of JPH10256196A publication Critical patent/JPH10256196A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To determine a mark for crystal orientation easily without imparting residual strain into a wafer by polishing a predetermined position at the beveled circumferential fringe part of the water using a polishing butt wheel thereby making a thin shallow groove, as a mark for identifying the crystal orientation, in the beveled part. SOLUTION: A polishing butt wheel 1 pressed against a beveled part 3 while turning to make a thin shallow groove 4. Since a polishing butt wheel 1 is used for putting a mark, a groove 4 can be made slightly on the inside of the beveled part 3 with no loss of effective area of the wafer 2 nor any adverse effect, e.g. machining stress or thermal stress, on the wafer 2 body. Since a groove 4 thus made has different light reflecting state, it can be detected both visually and through use of an optical sensor and when the groove 4 is made on the surface side of the water 2, the water can be positioned from the surface side easily and visually or through an automatic system.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、結晶方位の識別に使用
されるマークをウェーハの面取り部に付けるマーキング
方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a marking method for marking a mark used for identifying a crystal orientation on a chamfered portion of a wafer.

【0002】[0002]

【従来の技術】インゴットから切り出されたウェーハ
は、ラッピング,面取り等の工程を経てエッチング工程
に送られる。このとき、ウェーハの結晶方位を指示する
マークがウェーハのエッジ部に付けられている。マーク
は、たとえばウェーハをスクライブするとき劈開面に合
わせるために使用される。従来のマーキングには、ウェ
ーハの一角にオリエンテーションフラットを付けるOF
法,ウェーハの一角に切り込みを入れるノッチ法,レー
ザで溶融してウェーハ面に刻印するレーザマーキング法
等が採用されている。
2. Description of the Related Art A wafer cut from an ingot is sent to an etching process through processes such as lapping and chamfering. At this time, a mark indicating the crystal orientation of the wafer is attached to the edge of the wafer. The marks are used, for example, to scribe the cleavage plane when scribing the wafer. For conventional marking, an OF with an orientation flat at one corner of the wafer
There are employed a notch method in which a cut is made in one corner of a wafer, a laser marking method in which a wafer is melted and stamped on a wafer surface, and the like.

【0003】[0003]

【発明が解決しようとする課題】しかし、OF法では、
結晶方位位置合せの精度が不足しがちであり、ウェーハ
の有効面積を少なくする欠点もある。また、オリエンテ
ーションフラットは、ウェーハのハンドリングに使用さ
れる静電チャックの形状に制約を与え、ウェーハがスピ
ン回転するときの動的バランスに悪影響を与える原因と
もなる。他方、ノッチ法で切り込みを入れると、切込部
周辺に加工歪みが残留し易く、しかも残留加工歪みを完
全に除去することが困難である。また、レーザで付けた
刻印は、自動読み取りに問題がある。本発明は、このよ
うな問題を解消すべく案出されたものであり、研磨バフ
ホイールで面取り部をマーキングすることにより、ウェ
ーハに残留歪みを与えることなく、目視観察又は自動読
み取りの何れでも容易に判別できる結晶方位用のマーク
を付けることを目的とする。
However, in the OF method,
The accuracy of the crystal orientation alignment tends to be insufficient, and there is a disadvantage that the effective area of the wafer is reduced. In addition, the orientation flat restricts the shape of the electrostatic chuck used for handling the wafer, and causes a bad influence on the dynamic balance when the wafer spins. On the other hand, when the cut is made by the notch method, the processing strain tends to remain around the cut portion, and it is difficult to completely remove the remaining processing strain. Also, laser engraving has a problem with automatic reading. The present invention has been devised to solve such a problem, and by marking a chamfered portion with a polishing buff wheel, it is easy to perform either visual observation or automatic reading without giving residual distortion to the wafer. It is an object of the present invention to provide a mark for a crystal orientation that can be distinguished from a crystal orientation.

【0004】[0004]

【課題を解決するための手段】本発明のマーキング方法
は、その目的を達成するため、ウェーハの周縁にある面
取り部の所定位置を研磨バフホイールで研磨し、結晶方
位識別用マーキングとしての細く浅い溝を面取り部に付
けることを特徴とする。
In order to achieve the object, a marking method according to the present invention is characterized in that a predetermined position of a chamfered portion on a peripheral edge of a wafer is polished with a polishing buff wheel to obtain a thin and shallow marking for crystal orientation identification. It is characterized in that a groove is formed in the chamfer.

【0005】[0005]

【実施の形態】本発明では、鏡面面取り用のバフホイー
ルと同様な研磨バフホイールが使用される。この研磨バ
フホイールは、金属製ロールの周面にポリウレタン等の
バフを貼り付けている。研磨バフホイール1は、図1に
示すようにウェーハ2の周縁にある面取り部3に対向
し、一般的には、オリエンテーションフラット又はノッ
チの位置の結晶方位と同じになるように<110>±1
度等の結晶方位を表す円周方向箇所に位置決めされる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, a polishing buff wheel similar to a buff wheel for chamfering a mirror is used. This polishing buff wheel has a buff made of polyurethane or the like adhered to the peripheral surface of a metal roll. The polishing buff wheel 1 faces the chamfered portion 3 on the peripheral edge of the wafer 2 as shown in FIG. 1, and generally has <110> ± 1 so as to have the same crystal orientation as the orientation flat or the notch.
It is positioned at a circumferential position indicating the crystal orientation such as degree.

【0006】研磨バフホイール1を、図2に示すように
回転させながら面取り部3に押し付けると、面取り部3
に細く浅い凹溝4が形成される。凹溝4は、図3のよう
にして測定される深さが10μm以上であれば十分にマ
ークとして使用される。面取り部3に凹溝4を形成する
とき、ウェーハ2の有効面積を些かも損なうことがな
い。また、面取り部3の内側に若干入った状態で凹溝4
を形成しても、研磨バフホイール1を使用したマーキン
グであるため、加工歪み,熱応力等の悪影響をウェーハ
2本体に与えることはない。凹溝4は、必要に応じてV
形状,U形状,台形状等に底形状が整形される。
When the polishing buff wheel 1 is pressed against the chamfered portion 3 while rotating as shown in FIG.
A shallow concave groove 4 is formed. If the depth measured as shown in FIG. 3 is 10 μm or more, the concave groove 4 is sufficiently used as a mark. When the concave groove 4 is formed in the chamfered portion 3, the effective area of the wafer 2 is not slightly impaired. The groove 4 is slightly inserted into the chamfered portion 3.
Is formed, since the marking is performed using the polishing buff wheel 1, no adverse effects such as processing distortion and thermal stress are given to the main body of the wafer 2. The concave groove 4 has a V
The bottom shape is shaped into a shape, a U shape, a trapezoidal shape, and the like.

【0007】形成された凹溝4は、光の反射状態が異な
ることから、目視又は光学センサーの何れでも判定でき
る。また、ウェーハ2の表面側に凹溝4を形成すると、
ウェーハ2の表面側から目視又は自動装置により容易に
位置決めすることができる。たとえば、TVカメラを用
いた画像処理でマーキング溝の位置を検出することがで
きる。この方法は、高精度で位置検出できるものの、設
備コストが高い欠点がある。そこで、精度が若干劣るも
のの安価で簡便な位置検出方法として、細く絞った光ビ
ームの反射を検出する方法が考えられる。すなわち、図
4に示すようにスリット5等で細く絞った光ビーム6を
ウェーハ2の直上から凹溝4部分に照射する。そして、
凹溝4で反射した光ビーム6を特定位置に配置された受
光素子7で検出することにより、凹溝4の位置が検出さ
れる。
[0007] Since the formed groove 4 has a different light reflection state, it can be determined either visually or by an optical sensor. Further, when the concave groove 4 is formed on the front side of the wafer 2,
Positioning can be easily performed from the front side of the wafer 2 visually or by an automatic device. For example, the position of the marking groove can be detected by image processing using a TV camera. Although this method can detect the position with high accuracy, it has a drawback that the equipment cost is high. Therefore, a method for detecting the reflection of a light beam that is narrowed down can be considered as an inexpensive and simple position detection method with slightly lower accuracy. That is, as shown in FIG. 4, a light beam 6 narrowed down by a slit 5 or the like is applied to the concave groove 4 from directly above the wafer 2. And
The position of the concave groove 4 is detected by detecting the light beam 6 reflected by the concave groove 4 by the light receiving element 7 arranged at a specific position.

【0008】[0008]

【発明の効果】以上に説明したように、本発明において
は、研磨バフホイールを使用してウェーハの面取り部に
マークを付けているので、マーキングに伴って残留加工
歪みや熱応力が発生せず、ウェーハ本体に悪影響を及ぼ
すことがない。研磨バフホイールで面取り部に付けられ
た凹溝は、ウェーハの結晶方位を位置合せするときのマ
ークとして使用される。
As described above, in the present invention, since the mark is formed on the chamfered portion of the wafer by using the polishing buff wheel, the residual processing distortion and the thermal stress do not occur with the marking. No adverse effect on the wafer body. The groove formed in the chamfered portion by the polishing buff wheel is used as a mark when aligning the crystal orientation of the wafer.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 ウェーハ周縁の面取り部に対向させた研磨バ
フホイールの平面図
FIG. 1 is a plan view of a polishing buff wheel facing a chamfered portion of a wafer periphery.

【図2】 面取り部と研磨バフホイールとの位置関係を
示す一部断面図
FIG. 2 is a partial sectional view showing a positional relationship between a chamfered portion and a polishing buff wheel.

【図3】 研磨バフホイールにより凹溝が形成された面
取り部を示す断面図
FIG. 3 is a cross-sectional view showing a chamfered portion in which a concave groove is formed by a polishing buff wheel.

【図4】 凹溝で反射する光ビームを利用して凹溝を位
置検出する方法を説明する図
FIG. 4 is a view for explaining a method for detecting the position of a groove using a light beam reflected by the groove.

【符号の説明】[Explanation of symbols]

1:研磨バフホイール 2:ウェーハ 3:面取り
部 4:凹溝 5:スリット 6:光ビーム 7:受光素子 d:凹溝の深さ
1: polishing buff wheel 2: wafer 3: chamfered portion 4: concave groove 5: slit 6: light beam 7: light receiving element d: depth of concave groove

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 ウェーハの周縁にある面取り部の所定位
置を研磨バフホイールで研磨し、結晶方位識別用マーキ
ングとしての細く浅い溝を面取り部に付けることを特徴
とするウェーハ面取り部のマーキング方法。
1. A method for marking a chamfered portion of a wafer, wherein a predetermined position of a chamfered portion on a peripheral edge of the wafer is polished by a polishing buff wheel, and a thin shallow groove as a crystal orientation identification marking is formed on the chamfered portion.
JP9055993A 1997-03-11 1997-03-11 Marking method at beveling part of wafer Pending JPH10256196A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9055993A JPH10256196A (en) 1997-03-11 1997-03-11 Marking method at beveling part of wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9055993A JPH10256196A (en) 1997-03-11 1997-03-11 Marking method at beveling part of wafer

Publications (1)

Publication Number Publication Date
JPH10256196A true JPH10256196A (en) 1998-09-25

Family

ID=13014617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9055993A Pending JPH10256196A (en) 1997-03-11 1997-03-11 Marking method at beveling part of wafer

Country Status (1)

Country Link
JP (1) JPH10256196A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100697899B1 (en) * 1999-01-28 2007-03-21 고마쓰 덴시 긴죠꾸 가부시기 가이샤 Wafer for semiconductor
US8125654B2 (en) 2008-04-21 2012-02-28 Applied Materials, Inc. Methods and apparatus for measuring substrate edge thickness during polishing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100697899B1 (en) * 1999-01-28 2007-03-21 고마쓰 덴시 긴죠꾸 가부시기 가이샤 Wafer for semiconductor
US8125654B2 (en) 2008-04-21 2012-02-28 Applied Materials, Inc. Methods and apparatus for measuring substrate edge thickness during polishing

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