JPH1022765A - Surface acoustic wave resonator and resonator type filter - Google Patents
Surface acoustic wave resonator and resonator type filterInfo
- Publication number
- JPH1022765A JPH1022765A JP17769196A JP17769196A JPH1022765A JP H1022765 A JPH1022765 A JP H1022765A JP 17769196 A JP17769196 A JP 17769196A JP 17769196 A JP17769196 A JP 17769196A JP H1022765 A JPH1022765 A JP H1022765A
- Authority
- JP
- Japan
- Prior art keywords
- comb
- surface acoustic
- acoustic wave
- resonator
- shaped electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、不要スプリアスを
抑圧した弾性表面波共振子、又は、弾性表面波共振子を
複数個直列，並列に組み合わせた共振子型フィルタに関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave resonator in which unnecessary spurious components are suppressed, or a resonator type filter in which a plurality of surface acoustic wave resonators are combined in series and parallel.
【０００２】[0002]
【従来の技術】弾性表面波共振子（以下ＳＡＷ共振子と
略称）は、ＵＨＦ，ＶＨＦ帯での水晶振動子に比べ、基
本発振が可能で、小型化，高Ｑを実現できることから、
各種通信装置，家電製品に適用されている。2. Description of the Related Art Surface acoustic wave resonators (hereinafter abbreviated as SAW resonators) are capable of fundamental oscillation, are smaller in size, and have a higher Q than quartz resonators in the UHF and VHF bands.
It is applied to various communication devices and home appliances.
【０００３】ＳＡＷ共振子の基本的な構成は大きく分け
ると、入出力用櫛形電極の両側に反射器を設けたキャビ
ティ型、反射器を設けないＩＤＴ型の二つがある。また
このＳＡＷ共振子の基板材料として、水晶基板が、温度
特性の点から数多く用いられている。また最近では、結
合係数が大きく、広帯域化に有利なＬｉＴａＯ3基板，
ＬｉＮｂＯ3基板を用いたＳＡＷ共振子が移動帯通信用
ＳＡＷフィルタに用いられている。The basic structure of a SAW resonator is roughly classified into two types: a cavity type in which a reflector is provided on both sides of an input / output comb-shaped electrode and an IDT type in which a reflector is not provided. Further, as a substrate material of the SAW resonator, a quartz substrate is widely used in terms of temperature characteristics. Recently, a LiTaO 3 substrate which has a large coupling coefficient and is advantageous for broadening the band,
A SAW resonator using a LiNbO 3 substrate is used for a mobile band communication SAW filter.
【０００４】従来技術として、特開平３−１２５５１１
号公報がある。この技術は、櫛形電極指の先に対応する
バスバーに切り込みを入れ、対向する櫛形電極の交差幅
を長くしたものである。The prior art is disclosed in Japanese Patent Application Laid-Open No. 3-125511.
There is an official gazette. In this technique, a cut is made in a bus bar corresponding to the tip of a comb-shaped electrode finger to increase the cross width of the opposing comb-shaped electrode.
【０００５】[0005]
【発明が解決しようとする課題】一般にＳＡＷ共振子
は、図９に示すように、櫛形電極１５と櫛形電極１６の
交差している部分１７が表面波に変換される。尚、変換
効率向上のため、櫛形電極１５、櫛形電極１６の両側に
は、反射器１８が形成される。しかし、表面波は広がり
を見せるため、櫛形電極１５と櫛形電極１６の非交差開
口部１９の影響を受け、図１０に示すように、ＳＡＷ共
振子インピーダンス特性で、共振周波数と反共振周波数
との間で不要スプリアスの原因となる。従来技術は、櫛
形電極指の先に対応するバスバーに切り込みを入れ、対
向する櫛形電極の交差幅を長くすることで、空隙部（以
下非交差開口部と呼ぶ）が見かけ上なくなり、不要スプ
リアスを極力抑え、変換効率の高いＳＡＷ共振子を実現
したものである。Generally, in a SAW resonator, as shown in FIG. 9, a crossing portion 17 of a comb-shaped electrode 15 and a comb-shaped electrode 16 is converted into a surface wave. In order to improve the conversion efficiency, reflectors 18 are formed on both sides of the comb-shaped electrodes 15 and 16. However, since the surface wave shows a spread, it is affected by the non-intersecting openings 19 between the comb-shaped electrode 15 and the comb-shaped electrode 16, and as shown in FIG. 10, the SAW resonator impedance characteristic indicates a difference between the resonance frequency and the anti-resonance frequency. Unnecessary spurs may be caused between them. In the prior art, a gap (hereinafter, referred to as a non-crossing opening) is eliminated by making a cut in a bus bar corresponding to the tip of a comb-shaped electrode finger and increasing the cross width of the opposing comb-shaped electrode, thereby reducing unnecessary spurious. This is a SAW resonator with high conversion efficiency which is suppressed as much as possible.
【０００６】しかしＳＡＷ共振子は量産では、ワイヤー
ボンディングの際の信頼性、電極パターンの抵抗分を下
げるため、ボンディングパッド部，バスバー部を厚付け
したのちに、弾性表面波を励振するための櫛形電極を形
成しており、非交差開口部がある程度の距離を持たない
場合、櫛形電極先端部分がこん棒状に形成されるか、最
悪、バスバー部と櫛形電極部分とがショートしてしま
う。更に、表面波は広がりを見せるため非交差部の影響
を受け、櫛形電極の交差部分と非交差開口部の音速の差
から、ＳＡＷ共振子のインピーダンス特性で、共振周波
数と反共振周波数との間で不要スプリアスが発生するこ
とは避けられないのが現状である。However, in mass production of SAW resonators, in order to reduce the reliability of wire bonding and the resistance of the electrode pattern, the thickness of the bonding pads and bus bars is increased, and then a comb-shaped SAW resonator is used to excite surface acoustic waves. If the electrodes are formed and the non-intersecting openings do not have a certain distance, the tip portion of the comb-shaped electrode is formed in a club shape, or at worst, the bus bar portion and the comb-shaped electrode portion are short-circuited. Furthermore, the surface wave is affected by the non-intersecting portion because it shows a spread, and the difference between the sound speed of the intersecting portion and the non-intersecting opening of the comb-shaped electrode indicates that the impedance characteristic of the SAW resonator indicates that the surface acoustic wave has At present, it is unavoidable that unnecessary spurious components are generated.
【０００７】本発明の目的は、ＳＡＷ共振子の共振周波
数と反共振周波数との間で発生する不要スプリアスを抑
圧したＳＡＷ共振子および、ＳＡＷ共振子を組み合わせ
た共振子型フィルタを提供することにある。An object of the present invention is to provide a SAW resonator in which unnecessary spurious generated between the resonance frequency and the anti-resonance frequency of the SAW resonator is suppressed, and a resonator filter combining the SAW resonator. is there.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に、本発明は、圧電性基板上に形成したＳＡＷ共振子の
櫛形電極のうち非交差開口部に、二酸化シリコン，五酸
化タンタル、若しくは、窒化シリコンからなる誘電体膜
を形成した構成により解決される。In order to achieve the above-mentioned object, the present invention provides a comb-shaped electrode of a SAW resonator formed on a piezoelectric substrate, in which silicon dioxide, tantalum pentoxide, or The problem is solved by a configuration in which a dielectric film made of silicon nitride is formed.
【０００９】上記のような手段をとることにより、ＳＡ
Ｗ共振子のインピーダンス特性で発生する不要スプリア
スを抑圧できる。すなわち、ＳＡＷ共振子の櫛形電極の
非交差開口部に、誘電体膜を形成することで、非交差開
口部の表面波音速Ｖｆが遅くなり、交差部分の表面波音
速Ｖｍと等しくなるため、非交差開口部での不要スプリ
アスが交差部分で発生するメインスプリアスと一致す
る。このため、従来から問題であった非交差開口部での
不要スプリアスが抑圧されると同時に、ＳＡＷ共振子自
体の無負荷Ｑが向上し、良好な共振子インピーダンス特
性を得ることができる。By taking the above measures, the SA
Unnecessary spurious generated by the impedance characteristic of the W resonator can be suppressed. That is, by forming a dielectric film in the non-intersecting opening of the comb-shaped electrode of the SAW resonator, the surface acoustic wave velocity Vf of the non-intersecting opening is reduced and becomes equal to the surface acoustic wave velocity Vm of the intersecting portion. Unwanted spurs at the intersection opening coincide with main spurs generated at the intersection. For this reason, unnecessary spurious in the non-crossing opening, which has conventionally been a problem, is suppressed, and at the same time, the unloaded Q of the SAW resonator itself is improved, and a good resonator impedance characteristic can be obtained.
【００１０】[0010]
【発明の実施の形態】以下、本発明の第１の実施例を図
１により説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described below with reference to FIG.
【００１１】本発明の第１の実施例は、図１の１段のＳ
ＡＷ共振子の平面図である。６４度回転Ｙ軸切断Ｘ軸伝
搬のＬｉＮｂＯ3からなる圧電性基板１の上に、ワイヤ
リング用のボンディングパッド２、櫛形電極３を電気的
に接続するためのバスバー４からなっている。また、櫛
形電極３の両側には、反射器５が形成される。第１の実
施例は、櫛形電極３の対数が３００本であるが、図１で
は省略して模式的に図示している。また、このＳＡＷ共
振子の交差部の開口長は６０μｍ、櫛形電極３が交差し
ない非交差開口部が５μｍとなっている。更に櫛形電極
３が交差しない非交差開口部とバスバー４にまたがる形
で、誘電体膜として、二酸化シリコン膜６が形成されて
いる。二酸化シリコン膜６は、非交差開口部の表面波音
速Ｖｆと交差部分の表面波音速Ｖｍとが等しくなる様、
スパッタ法により膜厚７００ｎｍに形成されている。Ｓ
ＡＷ共振子の電極材料は、Ａｌ−Ｔｉ合金を１００ｎｍ
厚でスパッタにより形成されている。また、ワイヤリン
グ用のボンディングパッド２、櫛形電極３を電気的に接
続するためのバスバー４は、ワイヤーボンディングの際
の信頼性、電極パターンの抵抗分を下げるため、純Ａｌ
により６００ｎｍで厚付けしている。図２は本発明の第
２の実施例であり、本発明の第１の実施例のＳＡＷ共振
子を、バスバー４を会して二つ直列に接続した、２段Ｓ
ＡＷ共振子の平面図である。更に、図３は本発明の第３
の実施例であり、本発明の第１の実施例のＳＡＷ共振子
を、バスバー４を会して並列に接続した２段ＳＡＷ共振
子の平面図である。第２，第３の実施例でも第１の実施
例と同様、非交差開口部とバスバー４にまたがる形で、
誘電体膜として、二酸化シリコン６が形成されている。
二酸化シリコン膜６は、非交差開口部の表面波音速Ｖｆ
と交差部分の表面波音速Ｖｍとが等しくなる様、スパッ
タ法により膜厚７００ｎｍに形成されている。図４は、
図１の第１の実施例のインピーダンス特性を示してお
り、共振周波数は９３０ＭＨｚ、反共振周波数９７０Ｍ
Ｈｚである。図１０の従来ＳＡＷ共振子で発生した、共
振子の共振周波数と反共振周波数との間で発生する不要
スプリアスが抑圧されているとともに、インピーダンス
特性が急峻、すなわち無負荷Ｑが向上していることがわ
かる。In the first embodiment of the present invention, the first stage S shown in FIG.
It is a top view of an AW resonator. A bonding pad 2 for wiring and a bus bar 4 for electrically connecting a comb-shaped electrode 3 are formed on a piezoelectric substrate 1 made of LiNbO 3 that propagates a 64-degree rotation Y-axis cut X-axis. In addition, reflectors 5 are formed on both sides of the comb-shaped electrode 3. In the first embodiment, the number of comb-shaped electrodes 3 is 300, but is omitted in FIG. 1 and schematically shown. The opening length of the intersection of the SAW resonator is 60 μm, and the non-intersection opening where the comb-shaped electrodes 3 do not intersect is 5 μm. Further, a silicon dioxide film 6 is formed as a dielectric film so as to extend over the non-intersecting openings where the comb-shaped electrodes 3 do not intersect and the bus bar 4. The silicon dioxide film 6 is formed such that the surface acoustic wave velocity Vf at the non-intersecting opening and the surface acoustic wave velocity Vm at the intersection are equal.
The film is formed to a thickness of 700 nm by a sputtering method. S
The electrode material of the AW resonator is 100 nm Al-Ti alloy.
Thick and formed by sputtering. The bus bar 4 for electrically connecting the bonding pad 2 for wiring and the comb-shaped electrode 3 is made of pure Al to reduce the reliability of wire bonding and the resistance of the electrode pattern.
To 600 nm. FIG. 2 shows a second embodiment of the present invention, in which two SAW resonators according to the first embodiment of the present invention are connected in series with two bus bars 4 and connected in series.
It is a top view of an AW resonator. FIG. 3 shows a third embodiment of the present invention.
FIG. 3 is a plan view of a two-stage SAW resonator in which the SAW resonator according to the first embodiment of the present invention is connected in parallel with the bus bar 4 interposed therebetween. In the second and third embodiments, similarly to the first embodiment, the non-intersecting opening and the bus bar 4 are straddled.
Silicon dioxide 6 is formed as a dielectric film.
The silicon dioxide film 6 has a surface wave velocity Vf of the non-crossing opening.
Is formed to a film thickness of 700 nm by a sputtering method so that the surface wave velocity of sound Vm at the intersection is equal. FIG.
2 shows the impedance characteristics of the first embodiment of FIG. 1, where the resonance frequency is 930 MHz and the anti-resonance frequency is
Hz. Unnecessary spurious generated between the resonance frequency and the antiresonance frequency of the resonator generated in the conventional SAW resonator of FIG. 10 is suppressed, and the impedance characteristic is steep, that is, the no-load Q is improved. I understand.
【００１２】図５は本発明の第４の実施例のブロック図
である。実施例１，２，３いずれかの構成のＳＡＷ共振
子を用い、共振周波数の異なる４個のＳＡＷ共振子７，
８，９，１０を直，並列に組み合わせた共振子型フィル
タである。従来のＳＡＷ共振子を用いた場合、図６に示
すように、共振周波数と反共振周波数との間で不要スプ
リアスが発生するため、フィルタ特性で特に、通過帯域
内で不要スプリアスによる特性劣化が顕著となってい
る。しかし、本発明のＳＡＷ共振子により共振子型フィ
ルタを構成することで、図７に示すように、良好な通過
帯域特性が実現できる。（従来：通過帯域損失約４ｄＢ
が２．２ｄＢに改善） 尚、本発明では、誘電体膜として、二酸化シリコンを用
いたが、その他、五酸化タンタル，窒化シリコン等の誘
電体膜であってもよい。更に、本発明では、圧電性基板
は、ＬｉＮｂＯ3を用いたが、ＬｉＮｂＯ3に限らず、電
極指の開口部と非交差開口部で、違うモードの発生する
可能性のあるＬｉＴａＯ3、あるいは水晶基板であって
も良い。さらに、電極材料はＡｌ−Ｔｉに限らず、他の
Ａｌ系合金であっても良い。FIG. 5 is a block diagram of a fourth embodiment of the present invention. The SAW resonator having any one of the first, second, and third embodiments is used, and four SAW resonators 7 having different resonance frequencies are used.
This is a resonator type filter in which 8, 9, and 10 are combined in series and in parallel. When a conventional SAW resonator is used, as shown in FIG. 6, unnecessary spurious is generated between the resonance frequency and the anti-resonance frequency. Therefore, in the filter characteristics, the characteristic deterioration due to the unnecessary spurious is particularly remarkable in the pass band. It has become. However, by forming a resonator-type filter using the SAW resonator of the present invention, good passband characteristics can be realized as shown in FIG. (Conventional: passband loss about 4 dB
In the present invention, silicon dioxide is used as the dielectric film, but other dielectric films such as tantalum pentoxide and silicon nitride may be used. Further, in the present invention, LiNbO 3 is used for the piezoelectric substrate. However, the piezoelectric substrate is not limited to LiNbO 3 , but may be LiTaO 3 or quartz in which a different mode may occur in the opening of the electrode finger and the non-intersecting opening. It may be a substrate. Further, the electrode material is not limited to Al-Ti, and may be another Al-based alloy.
【００１３】ＳＡＷ共振子を含む弾性表面波装置は、一
般に、電圧を印加して基板に機械的振動を生じさせるの
で、余分な慣性的負荷が加わるのは、好ましくなく、導
電性良好で軽い材料、たとえばＡｌあるいはＡｌ合金で
電極を形成することが好ましい。機械振動を生じる櫛形
電極３は、耐マイグレーション性が重要であるため、導
電性は多少低いが、耐マイグレーション性の良好なＡｌ
−Ｔｉ合金を選定した。また、櫛形電極３の形成には、
電極幅に高い寸法精度が要求されるため、湿式化学エッ
チングに代わり、ＲＩＥ（ドライエッチング）技術を用
いた。A surface acoustic wave device including a SAW resonator generally applies a voltage to generate mechanical vibration on a substrate. Therefore, it is not desirable to apply an extra inertial load, and it is not preferable to use a light material having good conductivity. For example, it is preferable to form the electrode from Al or an Al alloy. The comb-shaped electrode 3 that generates mechanical vibration has a somewhat low conductivity because migration resistance is important.
-A Ti alloy was selected. Also, for forming the comb-shaped electrode 3,
Since high dimensional accuracy is required for the electrode width, RIE (dry etching) technology was used instead of wet chemical etching.
【００１４】図８は本発明のＳＡＷ共振子型フィルタを
用いて構成した移動無線機システムのアンテナ分波器の
実施例である。分波器の送信フィルタ１１、受信フィル
タ１２に、ＳＡＷ共振子型フィルタを用いた。送信フィ
ルタ１１、受信フィルタ１２はそれぞれ、分岐回路１３
を介してアンテナ１４と接続されている。移動無線機シ
ステムに用いる送信フィルタ１１，受信フィルタ１２
は、耐電力性を必要とするほか、９００〜１０００ＭＨ
ｚと高周波であるため、弾性表面波装置を構成する入
力，出力用櫛形電極が１μｍ程度と微細となる。又、フ
ィルタ特性として非常に低損失で、急峻なフィルタの肩
特性を必要とし、組み合わせる共振子のインピーダンス
特性が重要である。このため本発明のＳＡＷ共振子を用
いることで、ＳＡＷ共振子のインピーダンス特性で、反
共振周波数と共振周波数の間での不要スプリアスが低減
でき、良好なフィルタ特性が提供できる。FIG. 8 is an embodiment of an antenna duplexer of a mobile radio system constructed using the SAW resonator type filter of the present invention. SAW resonator type filters were used for the transmission filter 11 and the reception filter 12 of the duplexer. The transmission filter 11 and the reception filter 12 are each provided with a branch circuit 13.
Is connected to the antenna 14 via the. Transmission filter 11 and reception filter 12 used for mobile radio system
Requires power durability and 900-1000 MH
Since the frequency is z and the frequency is high, the input and output comb electrodes constituting the surface acoustic wave device are as fine as about 1 μm. Further, the filter characteristic requires very low loss and a steep shoulder characteristic of the filter, and the impedance characteristic of the resonator to be combined is important. For this reason, by using the SAW resonator of the present invention, unnecessary spurious between the anti-resonance frequency and the resonance frequency can be reduced in the impedance characteristic of the SAW resonator, and good filter characteristics can be provided.
【００１５】尚、本発明は、移動無線機システムに限ら
ず、ＶＴＲ、またはＣＡＴＶ用コンバータ、衛星放送用
受信機システム等に用いるＳＡＷ共振子、ＳＡＷ共振子
型フィルタ、一般の弾性表面波装置でも有効な手段であ
る。更に、本発明は、櫛形電極の外側に反射電極を形成
した１ポートのキャビティ型構成について述べたが、反
射器を有しないＩＤＴ型共振子、入出力櫛形電極を二つ
持つ２ポート型構成、等全てのＳＡＷ共振子構成でも有
効な手段である。The present invention is not limited to a mobile radio system, but also applies to a SAW resonator, a SAW resonator type filter, and a general surface acoustic wave device used in a VTR or CATV converter, a satellite broadcast receiver system, and the like. It is an effective means. Further, the present invention has described the one-port cavity configuration in which the reflection electrode is formed outside the comb electrode, but the IDT resonator without the reflector, the two-port configuration having two input / output comb electrodes, This is an effective means for all SAW resonator configurations.
【００１６】[0016]
【発明の効果】本発明によれば、ＳＡＷ共振子の櫛形電
極の非交差開口部に、誘電体膜を形成することで、非交
差開口部の表面波音速Ｖｆが遅くなり、交差部分の表面
波音速Ｖｍと等しくしたため、不要スプリアスが抑圧で
き、ＳＡＷ共振子インピーダンス特性、周波数特性の良
好なＳＡＷ共振子、およびＳＡＷ共振子型フィルタを提
供できる。According to the present invention, by forming a dielectric film in the non-intersecting openings of the comb-shaped electrodes of the SAW resonator, the surface acoustic wave velocity Vf of the non-intersecting openings is reduced, and the surface of the intersecting portions is reduced. Since the speed is set equal to the wave sound velocity Vm, unnecessary spurious can be suppressed, and a SAW resonator having good SAW resonator impedance characteristics and frequency characteristics and a SAW resonator type filter can be provided.
【図面の簡単な説明】[Brief description of the drawings]
【図１】本発明の第１の実施例の平面図。FIG. 1 is a plan view of a first embodiment of the present invention.
【図２】本発明の第２の実施例の平面図。FIG. 2 is a plan view of a second embodiment of the present invention.
【図３】本発明の第２の実施例の平面図。FIG. 3 is a plan view of a second embodiment of the present invention.
【図４】本発明の第１の実施例のＳＡＷ共振子のインピ
ーダンス特性図。FIG. 4 is an impedance characteristic diagram of the SAW resonator according to the first embodiment of the present invention.
【図５】本発明の第４の実施例のブロック図。FIG. 5 is a block diagram of a fourth embodiment of the present invention.
【図６】従来技術の共振子型フィルタの周波数特性図。FIG. 6 is a frequency characteristic diagram of a conventional resonator-type filter.
【図７】本発明を用いた共振子型フィルタの周波数特性
図。FIG. 7 is a frequency characteristic diagram of a resonator type filter using the present invention.
【図８】本発明を用いた移動無線機のアンテナ分波器の
説明図。FIG. 8 is an explanatory diagram of an antenna duplexer of a mobile wireless device using the present invention.
【図９】従来技術のＳＡＷ共振子の説明図。FIG. 9 is an explanatory diagram of a conventional SAW resonator.
【図１０】従来技術のＳＡＷ共振子のインピーダンス特
性図。FIG. 10 is an impedance characteristic diagram of a conventional SAW resonator.
１…圧電性基板、２…ボンディングパッド、３，１５，
１６…櫛形電極、４…バスバー、５，１８…反射器、６
…二酸化シリコン膜。1. Piezoelectric substrate, 2. Bonding pad, 3, 15,
16 ... comb-shaped electrode, 4 ... bus bar, 5, 18 ... reflector, 6
... Silicon dioxide film.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 大貫 秀男 神奈川県横浜市戸塚区吉田町292番地株式 会社日立製作所マルチメディアシステム開 発本部内 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Hideo Onuki 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Pref. Hitachi, Ltd. Multimedia Systems Development Division
Claims (5)
と上記櫛形電極の両側に反射器を有する単一または複数
個の弾性表面波共振子をバスバーにより直列に接続した
弾性表面波共振子において、上記櫛形電極の非交差開口
部に誘電体膜を形成し、上記櫛形電極の非交差開口部の
音速と櫛形電極の交差部の音速が等しくなるように誘電
体膜を形成したことを特徴とする弾性表面波共振子。1. A surface acoustic wave resonance in which a comb-shaped electrode made of a metal film on a piezoelectric substrate and a single or a plurality of surface acoustic wave resonators having reflectors on both sides of the comb-shaped electrode are connected in series by a bus bar. In the device, a dielectric film is formed in the non-intersecting opening of the comb-shaped electrode, and the dielectric film is formed such that the sound speed of the non-intersecting opening of the comb-shaped electrode is equal to the sound speed of the intersecting portion of the comb-shaped electrode. Characteristic surface acoustic wave resonator.
開口部に形成した上記誘電体膜が、二酸化シリコン，五
酸化タンタル、若しくは、窒化シリコンからなる弾性表
面波共振子。2. A surface acoustic wave resonator according to claim 1, wherein said dielectric film formed in said non-intersecting opening of said comb-shaped electrode is made of silicon dioxide, tantalum pentoxide, or silicon nitride.
子を複数個直列，並列に組み合わせた共振子型フィル
タ。3. A resonator type filter comprising a plurality of surface acoustic wave resonators according to claim 1 combined in series and parallel.
型弾性表面波共振子の圧電性基板に、ニオブ酸リチウム
単結晶基板（ＬｉＮｂＯ3），タンタル酸リチウム単結
晶基板（ＬｉＴａＯ3）を用いた共振子型フィルタ。4. The piezoelectric substrate of the multi-stage surface acoustic wave resonator according to claim 1, 2 or 3, wherein a lithium niobate single crystal substrate (LiNbO 3 ) or a lithium tantalate single crystal substrate (LiTaO 3 ) is used. The resonator type filter used.
性表面波共振子、および共振子型フィルタを用いた移動
無線機システム。5. A mobile radio system using the surface acoustic wave resonator according to claim 1, 2, 3 or 4, and a resonator type filter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17769196A JPH1022765A (en) | 1996-07-08 | 1996-07-08 | Surface acoustic wave resonator and resonator type filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17769196A JPH1022765A (en) | 1996-07-08 | 1996-07-08 | Surface acoustic wave resonator and resonator type filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH1022765A true JPH1022765A (en) | 1998-01-23 |
Family
ID=16035427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17769196A Pending JPH1022765A (en) | 1996-07-08 | 1996-07-08 | Surface acoustic wave resonator and resonator type filter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1022765A (en) |
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|---|---|---|---|---|
| WO2003090354A1 (en) * | 2002-04-19 | 2003-10-30 | Fujitsu Media Devices Limited | Surface acoustic wave apparatus |
| US7965155B2 (en) * | 2006-12-27 | 2011-06-21 | Panasonic Corporation | Surface acoustic wave resonator, and surface acoustic wave filter and antenna duplexer in which the surface acoustic wave resonator is used |
| US8085116B2 (en) * | 2008-03-24 | 2011-12-27 | Taiyo Yuden Co., Ltd. | Elastic wave device with a dielectric layer on the comb-shaped electrodes |
| JP2012186808A (en) * | 2011-03-07 | 2012-09-27 | Triquint Semiconductor Inc | Acoustic wave guide device and method for minimizing trimming effects and piston mode instabilities |
| JP2014143657A (en) * | 2012-12-27 | 2014-08-07 | Kyocera Corp | Elastic wave element, splitter and communication module |
| JP2015089069A (en) * | 2013-11-01 | 2015-05-07 | 太陽誘電株式会社 | Surface acoustic wave device and filter |
| US20150280689A1 (en) * | 2014-03-26 | 2015-10-01 | Taiyo Yuden Co., Ltd. | Surface acoustic wave device and filter |
| JP2021507576A (en) * | 2017-12-15 | 2021-02-22 | スリーディー グラス ソリューションズ，インク３Ｄ Ｇｌａｓｓ Ｓｏｌｕｔｉｏｎｓ，Ｉｎｃ | Connection transmission line resonant RF filter |
| CN114421923A (en) * | 2022-01-11 | 2022-04-29 | 无锡市好达电子股份有限公司 | High-performance surface acoustic wave filter |
-
1996
- 1996-07-08 JP JP17769196A patent/JPH1022765A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003090354A1 (en) * | 2002-04-19 | 2003-10-30 | Fujitsu Media Devices Limited | Surface acoustic wave apparatus |
| US6965282B2 (en) | 2002-04-19 | 2005-11-15 | Fujitsu Media Devices Limited | Surface acoustic wave device with two split interdigital transducers connected by specified electrode structures |
| CN100417019C (en) * | 2002-04-19 | 2008-09-03 | 富士通媒体部品株式会社 | Surface acoustic wave apparatus |
| US7965155B2 (en) * | 2006-12-27 | 2011-06-21 | Panasonic Corporation | Surface acoustic wave resonator, and surface acoustic wave filter and antenna duplexer in which the surface acoustic wave resonator is used |
| US8085116B2 (en) * | 2008-03-24 | 2011-12-27 | Taiyo Yuden Co., Ltd. | Elastic wave device with a dielectric layer on the comb-shaped electrodes |
| JP2012186808A (en) * | 2011-03-07 | 2012-09-27 | Triquint Semiconductor Inc | Acoustic wave guide device and method for minimizing trimming effects and piston mode instabilities |
| JP2014143657A (en) * | 2012-12-27 | 2014-08-07 | Kyocera Corp | Elastic wave element, splitter and communication module |
| JP2015089069A (en) * | 2013-11-01 | 2015-05-07 | 太陽誘電株式会社 | Surface acoustic wave device and filter |
| US20150280689A1 (en) * | 2014-03-26 | 2015-10-01 | Taiyo Yuden Co., Ltd. | Surface acoustic wave device and filter |
| JP2015188123A (en) * | 2014-03-26 | 2015-10-29 | 太陽誘電株式会社 | Surface acoustic device and filter |
| US9698755B2 (en) * | 2014-03-26 | 2017-07-04 | Taiyo Yuden Co., Ltd. | Surface acoustic wave device and filter |
| JP2021507576A (en) * | 2017-12-15 | 2021-02-22 | スリーディー グラス ソリューションズ，インク３Ｄ Ｇｌａｓｓ Ｓｏｌｕｔｉｏｎｓ，Ｉｎｃ | Connection transmission line resonant RF filter |
| CN114421923A (en) * | 2022-01-11 | 2022-04-29 | 无锡市好达电子股份有限公司 | High-performance surface acoustic wave filter |
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