JPH10226599A - Vapor phase epitaxial growth system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress crystal defects by using a system equipped with a growing room where the source gas of group III elements and the source gas of group V elements are separately supplied to a substrate and a compd. semiconductor layer is grown on the substrate, and by irradiating the substrate with UV rays in the region where the group III source gas is supplied. SOLUTION: A substrate 8 is placed on a substrate holding face 10 of a substrate holder 9 and the substrate is heated at 400 to 550 deg.C as held. The group III source gas such as trimethylgallium and the group V source gas such as arsine are supplied through source gas supply ports 2, 3 for group III and group V elements, respectively, to the inside of a cylindrical part 1a. The region where the group III source gas is supplied is repeatedly irradiated with light from an ALF excimer laser. The group III and group V source gases and hydrogen gas for acceleration are supplied in each specified flow amt. The substrate holder 9 is rotated around the center line of the cylindrical part 1a so that the group III source gas and the group V source gas are alternately supplied, while the region where the group III source gas is supplied is irradiated with UV rays 105 to activate the substrate surface. Thus, migration of the group III elements is accelerated to grow single atom layers of a compd. semiconductor such as GaAs.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a vapor phase growth apparatus for growing a compound semiconductor material. More specifically, the present invention relates to a vapor phase growth apparatus for growing a compound semiconductor layer used for a light emitting device and a high frequency device.

[0002]

2. Description of the Related Art Metal organic chemical vapor deposition (MOCVD) is well known as a method for growing a compound semiconductor material, and is used for manufacturing various devices. Further, in order to improve device performance, controllability of the growth of about an atomic layer is required, and an atomic layer growth method (hereinafter referred to as ALE) has been proposed.

FIG. 9A is a perspective view schematically showing a conventional apparatus for growing GaAs by ALE.
FIG. 9B is a cross-sectional view thereof. As shown in FIG. 9A, the vapor phase growth apparatus includes a growth chamber 1 having a substantially cylindrical shape. The growth chamber 1 includes a cylindrical portion 1a, a lid portion 1b for closing the upstream end of the cylindrical portion 1a, and a bottom portion 1c for closing the downstream side.
It has. The lid 1b is provided with a supply port 2 for supplying a group III source gas and a supply port 3 for supplying a group V source gas.

Under the growth chamber 1, a cylindrical support tube 4 having a smaller diameter than the cylindrical portion 1a is provided upright. Also,
The growth chamber 1 communicates with the support pipe 4 through an opening provided at the center of the bottom 1c, and the support pipe 4 communicates with an exhaust pipe 5 provided on the outer peripheral surface thereof. The gas in the cylindrical portion 1a is exhausted by a vacuum pump (not shown) through the support pipe 4 and the exhaust pipe 5. A drive shaft 6 and a drive motor (not shown) are provided in the support tube 4.

[0005] A partition plate 7 is provided in the cylindrical portion 1a as gas separating means. The partition plate 7 is provided in a plane passing between the raw material gas supply ports 2 and 3, and divides the inside of the cylindrical portion 1a into two regions corresponding to the raw material gas supply ports 2 and 3, respectively. The partition plate 7 is in contact with the inner walls of the cylindrical portion 1a, the lid 1b, and the bottom 1c. The substrate 8 is mounted on a substrate holding surface 10 of a disk-shaped substrate holder 9. A notch 11 is formed in the partition plate 7 so that the substrate holder 9 can pass through the two separated gas supply regions by a rotation operation.

The partition plate 7 forms two source gas supply regions in which each source gas is independently supplied from the respective source gas supply ports 2 and 3 to the substrate holding surface 10 during growth. In the case where a GaAs layer is grown as a compound semiconductor layer on a GaAs substrate by ALE using this vapor phase growth apparatus, the following has been performed.

First, the substrate 8 is set on the substrate holder 9. The substrate 8 is held at a constant temperature (400 ° C. to 450 ° C.) by a heater built in the substrate holder 9. In this state, I
Trimethylgallium (hereinafter referred to as T
MG) and arsine as a group V gas in a cylindrical portion 1a.
To supply. Here, the flow rate of TMG is set to 20 SCCM, the flow rate of arsine is set to 200 SCCM, and TMG and arsine are each accelerated by hydrogen gas at a flow rate of 5 SLM.

On the other hand, the pressure inside the growth chamber 1 is reduced to 2
0 Torr. As a result, a high-speed gas flow is generated in the cylindrical portion 1a.

The cylindrical portion 1a passes through the raw material gas supply ports 2 and 3.
The TMG and arsine supplied to the inside are separated by the partition plate 7 and reach the substrate holding surface 10 of the substrate holder 9 without being mixed with each other. As a result, as shown in FIG. 9B, two source gas supply regions (TMG supply region 12 and arsine supply region 13) to which TMG and arsine are independently supplied are formed on the substrate holding surface 10. here,
The substrate holder 9 is rotated around the center line of the cylindrical portion 1a by the drive motor.

Therefore, as shown in FIG. 10, TMG is supplied from the source gas supply port 2 and arsine is alternately supplied from the source gas supply port 3 to the surface of the substrate 8 set on the substrate holding surface 10. . That is, a gas supply cycle including two periods of the TMG supply period and the arsine supply period is formed. Assuming that the number of rotations of the substrate holder 9 is 6 times per minute (constant speed), the GaAs substrate 8 comes into contact with TMG and arsine for 5 seconds each. Thereby, the substrate 8
A monolayer of GaAs (about 2.
8Å) can be grown.

[0011]

However, the crystallinity of GaAs grown in this manner is not sufficient. This is because the substrate holding temperature had to be lowered to 400 ° C. to 450 ° C. in order to grow GaAs monoatomic layers at a time.
² or more). This defect was also attributed to the fact that arsine, which is a group V raw material, had poor decomposition efficiency at low temperatures.

In this apparatus, GaAs can be grown by ALE at a substrate temperature of 400 ° C. to 450 ° C., but mixed crystal AlGaAs cannot be grown. The reason is that the temperature at which monoatomic layer growth is possible is caused by AlG
This is because GaAs (400 ° C. to 450 ° C.), which is a constituent crystal of aAs, is different from AlAs (500 ° C. to 550 ° C.).

By the way, as a means for promoting the migration of the group III element at a low temperature, it has been proposed to irradiate the substrate with ultraviolet rays to activate the substrate surface by photocatalysis.

FIG. 11 shows a MOCVD apparatus capable of introducing the light. This apparatus has a substantially cylindrical reaction tube 100.
And a supply tube 101 for supplying TMG and arsine into the reaction tube 100. A substrate holder 102 is provided substantially at the center of the reaction tube 100, and is supported by an arm member 104 extending from the other end surface 103 of the reaction tube 100. Further, the ultraviolet light 10 from the upper part of the reaction tube 100.
5, for example, a window 106 and an optical system 107 into which an ArF excimer laser (wavelength 193 nm) can be introduced.

When GaAs is grown by this apparatus, the substrate holding temperature is lowered to 400 ° C. to 550 ° C., and as shown in FIG. 12, TMG and arsine are simultaneously supplied through a supply pipe 101, and ultraviolet light 105 is supplied. At this time, the substrate surface is excited, the migration of the group III element is promoted, and the monoatomic layer can be grown in a wider temperature range than when no ultraviolet light is applied (400 ° C. to 450 ° C.).

However, in this apparatus, TMG and arsine as raw material gases are decomposed in the apparatus by the introduced ultraviolet light, react before reaching the substrate, form microcrystals, deposit on the substrate, and deposit a new crystal. This was the cause of crystal defects.

[0017]

In order to achieve the above object, a vapor phase growth apparatus according to the present invention comprises a group III source gas and V
A group source gas is supplied to the substrate in a state where they are separated from each other, a growth chamber for growing a compound semiconductor layer on the substrate is provided, and ultraviolet light is applied to the substrate in a region where the group III source gas is supplied. It is characterized by being irradiated.

As described above, in a state where the group III source gas and the group V source gas are separated, the substrate is irradiated with ultraviolet light in the region where the group III gas is supplied. Before the raw material gas reaches the substrate, it is decomposed and reacted by ultraviolet light to produce microcrystals, which can be prevented from being deposited on the substrate. The substrate is activated by ultraviolet light, migration is sufficient, and the crystallinity can be improved.

A group III source gas and a group V source gas are supplied to a substrate in a state of being separated from each other, and a growth chamber for growing a compound semiconductor layer on the substrate is provided.
The substrate is irradiated with ultraviolet light in a region where the group II source gas is supplied, and the substrate is irradiated with infrared light in a region where the group V source gas is supplied.

As described above, since the substrate is irradiated with infrared light in the supply region of the group V source gas, the decomposition efficiency of the group V source gas can be improved, and the amount of the group V source gas to be supplied to the growth chamber can be improved. Can be reduced.

Here, a window for introducing the ultraviolet light or the infrared light into the substrate from the outside is formed in the growth chamber.

Further, the growth chamber has a cylindrical shape, and a plate-like partition plate for separating respective supply regions of the group III source gas and the group V source gas is provided inside the growth chamber. A notch is formed in the partition plate so that a disk-shaped substrate holder on which the substrate is mounted can pass through the two supply areas by a rotation operation.

As another example, the growth chamber has a cylindrical shape, and a separation for forming a gas flow for separating the respective supply regions of the group III source gas and the group V source gas above the growth chamber. A gas supply port is provided.

As still another example, the growth chamber has a cylindrical shape, and a plate-like partition plate for separating the supply regions of the group III source gas and the group V source gas is provided inside the growth chamber. A notch is formed in the partition plate so that a substantially conical substrate holder on which a plurality of the substrates are mounted can pass through the two supply areas by a rotation operation.

As still another example, the growth chamber has a cylindrical shape, and a substantially cylindrical substrate holder on which a substrate is mounted on an inner wall portion is provided inside the growth chamber. A plate-like partition plate for separating the supply regions of the group III source gas and the group V source gas is provided.

[0026]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG.
This will be described with reference to FIG. 1A and 1B are a perspective view schematically showing a vapor phase growth apparatus according to the present embodiment and a cross-sectional view thereof, respectively. Here, mainly the points different from the conventional example shown in FIGS. 9 and 11 will be described. The same functional portions as those in FIG. 9 are denoted by the same reference numerals.

In the vapor phase growth apparatus of this embodiment, the ultraviolet light 1 is placed on the group III source gas supply port 2 side of the upper lid 1b.
There is provided a quartz window 20 for introducing 05. Further, an optical system 21 for introducing light from an unillustrated ultraviolet light excitation light source (for example, an ArF excimer laser) is provided in the quartz window 20.

A method of growing a GaAs layer as a compound semiconductor layer on a GaAs substrate by ALF using this apparatus is performed as follows.

As in the prior art, first, the substrate 8 is set on the substrate holding surface 10 of the substrate holder 9, and the substrate 8 is held at a constant temperature (400 ° C. to 550 ° C.) by the built-in heater.
In this state, trimethylgallium (TM) as a group III source gas is supplied through the source gas supply ports 2 and 3, respectively.
G) and arsine as a group V source gas are supplied into the cylindrical portion 1a, and an ALF excimer laser is repeatedly applied to the group III source gas supply region at 100 Hz and an average power density of 5 W / c.
Irradiation is always performed at m ² . The hydrogen flow rates for accelerating TMG, arsine, and TMG and arsine are 20 SCCM, 200 SCCM, and 5 SLM, respectively, as in the conventional example.

The substrate holder 9 is rotated around the center line of the cylindrical portion 1a by a drive motor. Therefore, as shown in FIG. 2, TMG and arsine are alternately supplied to the surface of the substrate 8 set on the substrate holding surface 10, and the TMG supply region is irradiated with the ultraviolet light 105 from two periods. One gas supply cycle is formed.

Here, assuming that the number of rotations of the substrate holder 9 is 6 times per minute (constant speed), TMG and arsine come into contact with the GaAs substrate 8 for 5 seconds each.
A monolayer of GaAs (about 2.
8Å) can be grown. The crystal surface morphology produced by this method is good, and the hillock density is 100
Pieces / cm ² .

FIGS. 3A and 3B are a perspective view and a cross sectional view, respectively, of a vapor phase growth apparatus according to another embodiment of the present invention. The same parts as those in FIG. 1 are denoted by the same reference numerals.

In the present apparatus, the division of the group III source gas and the group V gas supply region is separated not by the partition plate but by the gas flow. Therefore, a plurality of separating gas supply ports 30 arranged in a straight line are provided at the center of the upper lid 1b. Here, three are provided.

Further, an ultraviolet light 1 is supplied to the group III raw material gas supply side.
In addition to providing a quartz window 20 and an optical system 21 for introducing 05, a quartz window 32 and an optical system 33 for introducing infrared light 31 are provided on the group V source gas supply side.

Using this vapor phase growth apparatus, Ga
The step of growing a GaAs layer as a compound semiconductor layer on the As substrate 10 will be described below.

TMG is used as a group III source gas, arsine is used as a group V source gas, and hydrogen is used as a separation gas.
The growth conditions were a substrate temperature of 400 ° C. to 550 ° C., a growth pressure of 20 Torr, a flow rate of hydrogen for accelerating TMG, arsine, and TMG and arsine of 20 SCCM, respectively.
100 SCCM, 5 SLM. The flow rate of the separation gas is set to 10 SLM for each supply port. The number of rotations of the substrate holder 7 is 6 rotations per minute (constant speed).

The cylindrical portion 1a passes through the raw material gas supply ports 2 and 3.
Are separated by the layered flow of the hydrogen gas and reach the substrate holding surface 10 of the substrate holder 9 without being mixed with each other. As a result, FIG.
As shown in (b), the TMG supply region 34 and the arsine supply region 35 on the substrate holding surface 10 are separated from each other by hydrogen.
6 separated. Here, the TMG supply region 34 receives the ultraviolet light 105, and the arsine supply region 35 receives the infrared light 3.
1 has been irradiated.

As a result, as shown in FIG. 4, as shown in FIG. 4, there are four periods: a TMG supply period excited by ultraviolet light, a separation period by hydrogen, an arsine supply period excited by infrared light, and a separation period by hydrogen. A gas supply cycle consisting of periods is formed. As a result, a monolayer of GaAs could be grown on the surface of the substrate 8 for each rotation. In this vapor phase growth apparatus, the flow path of each source gas is formed by the cylindrical portion 1b.
Since it can be separated without providing any members inside, there is an advantage that maintenance of the apparatus can be simplified.

Further, according to the present embodiment, the supply flow rate of arsine is 100 SCCM and the conventional 200 SCC shown in FIG.
M was reduced by half compared to M, because the arsine supply region 35 was irradiated with infrared light 31 to increase the temperature of the substrate only during the arsine supply period, thereby increasing the arsine decomposition efficiency. is there.

FIGS. 5A and 5B are a perspective view and a cross-sectional view, respectively, of a vapor phase growth apparatus according to still another embodiment of the present invention. The same parts as those in FIG. 1 are denoted by the same reference numerals.

The present embodiment is characterized in that a partition plate and a separating gas are used in combination as a gas separating means. That is, the supply port 4 for supplying the separation gas on a straight line passing through the middle of the source gas supply ports 2 and 3 of the lid 1 b of the growth chamber 1.
1, 41 are provided. Further, partition plates 40a and 40b are provided in the cylindrical portion 1a. These partition plates 4
0a, 40b intersect at the center line of the cylindrical portion 1a,
a, the source gas supply ports 2 and 3, the separation gas supply port 41,
The flow path of each gas is divided into four regions corresponding to 41.

Here, the angle at which the partition plates 40a and 40b intersect is set in accordance with the length of the period in which each source gas is to be supplied to the substrate 8.

As described above, according to the present embodiment, the partition plate 4
Since the separation gas is used in combination with Oa and 40b, the flow paths of the source gases can be more reliably separated.

An optical system 21 and a quartz window 20 for introducing ultraviolet light 105 to the group III source gas supply side, and an optical system 33 and a quartz window 32 for introducing infrared light 31 to the group V source gas supply side are provided. The provision is the same as in the embodiment of FIG.

Further, in this embodiment, when the apparatus is used for a long period of time, hydrogen gas for purging is installed inside the window apparatus in order to prevent reaction products from wrapping around and adhering to these windows and fogging. A purge gas supply port 42 to be introduced is further provided.

An example in which Ga _0.5 In _0.5 P is grown as a compound semiconductor layer on a GaAs substrate 8 using this vapor phase growth apparatus will be described. TMG and TMI (hereinafter referred to as (TMG + TMI)) which are simultaneously supplied to one system are used as the group III source gas, and one system of phosphine is used as the group V source gas. In addition, two systems of hydrogen are used as the separation gas.

The growth condition is such that the substrate temperature is 300 ° C. to 500 ° C.
° C, growth pressure 35 Torr, TMG flow rate 5SCC
Assuming that the flow rates of M and TMI are 10 SCCM and the flow rate of phosphine is 200 SCCM, these TMG, TMI and phosphine are accelerated by 3 SLM of hydrogen gas.
The flow rate of hydrogen gas for separation is 3 SLM. The number of rotations of the substrate holder 9 is 3 rotations per minute.

In this embodiment, as shown in FIG. 5B, the substrate holding surface 10 is excited by ultraviolet light (T
MG + TMI) supply region 43 and hydrogen separation region 4
4, a phosphine supply region 45 excited by infrared light,
Hydrogen separation regions 46 are sequentially formed. Here, the substrate holder 9 is rotated around the center line of the cylindrical portion 1a.

As a result, as shown in FIG. 6, a gas supply cycle consisting of four periods: (TMG + TMI) supply period excited by ultraviolet light, separation period by hydrogen, phosphine supply period by infrared light excitation, and separation period by hydrogen. Is formed. As a result, a Ga _0.5 In _0.5 P monoatomic layer (thickness of about 2.8 °) could be grown on the surface of the substrate 10 for each rotation.

TMG and T are used as group III source gases.
MA was used, arsine was used as a group V source gas, the substrate temperature was 400 ° C. to 550 ° C., and the growth pressure was 20.
In the case of Torr, unlike the conventional example shown in FIG. 12, a monoatomic layer of AlGaAs can be grown.

In each of the above embodiments, the composition of each layer of the compound semiconductor layer grown on the substrate was one type. However, the composition of the compound semiconductor layer was changed to a plurality of types by switching the type of the source gas on the way. Is also good. Further, in order to impart conductivity to the compound semiconductor layer to be grown, a source gas containing an impurity element may be used. Furthermore, in each of the above embodiments, an organometallic compound was used as the group III source gas, but another source gas, for example, a halogen compound may be used.

Further, in the vapor phase growth apparatus shown in FIGS. 1, 3 and 5, the growth chamber 1 has the cylindrical portion 1a extending in the vertical direction, but the invention is not limited to this. Cylindrical part 1a
May be provided in the horizontal direction so that the raw material gas and the separation gas flow in the horizontal direction.

The substrate holder 9 does not have a built-in heater, but may be provided with a coil around the cylindrical portion 1a to heat it at a high frequency. The ultraviolet light source is not limited to an ArF excimer laser, and a KrF excimer laser (wavelength: 248 nm) or a mercury lamp may be used.

FIG. 7 is a perspective view of a vapor phase growth apparatus for explaining still another embodiment of the present invention. The same functional portions as those in the embodiment of FIG. 1 are denoted by the same reference numerals.

In this vapor phase growth apparatus, a substantially frustoconical substrate holder 50 having a center line coinciding with the center line of the cylindrical portion 1a is provided at a substantially central portion inside the cylindrical portion 1a. Strictly speaking, the outer peripheral surface 51 of the substrate holder 50 is finished in a shape of an outer surface of a pyramid (polygonal pyramid) rather than a cone. Each small surface between the ridges of the outer peripheral surface 51 is
And a substrate holding surface on which the substrate 8 is set during growth.

In the substrate holder 8, the area for holding the substrate can be expanded as compared with the case where the substrate holding surface is provided horizontally. Therefore, a large number of substrates 8 are provided on the substrate holding surface.
Can be set, and productivity can be improved.

Further, in the cylindrical portion 1a, a partition plate 52 having a cutout cut into the shape of the substrate holder 50 and the drive shaft 6 is provided as gas separating means. This partition plate 52
Includes the center line of the cylindrical portion 1a, and the raw material gas supply port 2,
3 and is provided in a plane passing through the middle of the cylindrical portion 3 and divides the inside of the cylindrical portion 1a into two regions corresponding to the source gas supply ports 2 and 3, respectively.

Since the flow paths of the source gases are separated by the partition plate 52 in this manner, the III-group source gas and the V-group source gas are alternately supplied to the surface of the substrate 8 by the rotation of the substrate holder 50. Can be.

The functions similar to those of the embodiment of FIG.
Ultraviolet light 1 is applied to the group III source gas supply area side in the cylindrical portion 1a.
There is provided a window 53 through which the light 05 can be introduced, and an optical system 54 through which the ultraviolet light 105 is introduced into the window 53.

FIG. 8 is a perspective view of a vapor phase growth apparatus for explaining still another embodiment of the present invention. The same functional portions as those in the embodiment of FIG. 1 are denoted by the same reference numerals.

In this vapor phase growth apparatus, a substantially cylindrical substrate holder 60 having a center line coinciding with the center line of the cylindrical portion is provided in the cylindrical portion 1a. This substrate holder 60
A drive shaft 6 extending from a drive motor in the lower support tube 4;
It is supported by an arm member (not shown) extending radially from the outer periphery of the drive shaft 6 to the lower end of the substrate holder 60. Strictly speaking, the inner side surface 61 of the substrate holder 60 is finished in a rectangular tube (polygonal tube) rather than a cylinder.
Each small surface between the valleys of the inner side surface 61 has flatness so that the substrate 8 can be in close contact, and serves as a substrate holding surface on which the substrate 8 is set during growth.

According to the substrate holder 60, the area of the substrate holding surface can be expanded as compared with the case where the substrate holding surface is provided horizontally. Therefore, many substrates 8 can be set on the substrate holding surface, and productivity can be improved.

In the cylindrical portion 1a, a partition plate 62 having a substantially T-shape is provided as gas separating means. The partition plate 62 is provided in a plane including the center line of the cylindrical portion 1a and passing through the middle of the raw material gas supply ports 2 and 3, and the inside of the cylindrical portion 1a corresponds to two raw material gas supply ports 2 and 3, respectively. It is divided into areas.

As described above, the flow paths of the source gases are separated by the partition plate 62, so that the group III source gas and the group V source gas are alternately supplied to the surface of the substrate 8 by the rotation of the substrate holder 60. Can be. In addition, as a function similar to the embodiment of FIG. 1, a window 63 through which ultraviolet light 105 can be introduced into the group III source gas supply region in the cylindrical portion 1a.
And an optical system 64 for introducing ultraviolet light into the window 63.

The embodiment shown in FIGS. 7 and 8 also
As in the embodiment, a compound semiconductor having a good crystal surface can be obtained with high productivity.

[0066]

As described above, according to the present invention,
Since only the substrate holding surface in the region for supplying the group III source gas can be irradiated with the ultraviolet light, the migration of the group III can be promoted even at a low temperature, and the group III source gas and the group V can be mixed in the apparatus as in the conventional apparatus. It is possible to avoid a phenomenon in which a source gas and a decomposition reaction occur before reaching the substrate to generate microcrystals.

By irradiating the region to which the group V source gas is supplied with infrared light, heating can be performed only while the substrate is present in this region, and the decomposition efficiency of the group V source gas can be increased. .

[Brief description of the drawings]

FIGS. 1A and 1B are a perspective view and a cross-sectional view, respectively, of a vapor phase growth apparatus according to an embodiment of the present invention.

FIG. 2 is a timing chart of a growth step in the vapor phase growth apparatus of FIG.

3A and 3B are a perspective view and a cross-sectional view, respectively, of a vapor phase growth apparatus according to another embodiment of the present invention.

FIG. 4 is a timing chart of a growth step in the vapor phase growth apparatus of FIG. 3;

5A and 5B are a perspective view and a cross-sectional view, respectively, of a vapor phase growth apparatus according to still another embodiment of the present invention.

FIG. 6 is a timing chart of a growth step in the vapor phase growth apparatus of FIG.

FIG. 7 is a perspective view of a vapor phase growth apparatus according to still another embodiment of the present invention.

FIG. 8 is a perspective view of a vapor phase growth apparatus according to still another embodiment of the present invention.

FIGS. 9A and 9B are a perspective view and a cross-sectional view, respectively, of a vapor phase growth apparatus according to a conventional example.

FIG. 10 is a timing chart of a growth step in the vapor phase growth apparatus of FIG. 9;

FIG. 11 is a longitudinal sectional view of a vapor phase growth apparatus according to another conventional example.

FIG. 12 is a timing chart of a growth step in the vapor phase growth apparatus of FIG. 11;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Growth chamber 2 Group III source gas supply port 3 Group V source gas supply port 7 Partition plate 9 Substrate holder 10 Substrate 11 Notch 20 Window 31 Infrared light 105 Ultraviolet light

Claims (7)

[Claims] A group III source gas and a group V source gas are supplied to a substrate in a state where they are separated from each other, and a growth chamber for growing a compound semiconductor layer on the substrate is provided.
A vapor phase growth apparatus, wherein the substrate is irradiated with ultraviolet light in a region to which a group source gas is supplied. 2. A group III source gas and a group V source gas are supplied to a substrate in a state of being separated from each other, and a growth chamber for growing a compound semiconductor layer on the substrate is provided.
Wherein the substrate is irradiated with ultraviolet light in a region where the group V source gas is supplied, while the substrate is irradiated with infrared light in a region where the group V source gas is supplied. . 3. The vapor phase growth according to claim 1, wherein a window portion for introducing the ultraviolet light or the infrared light from the outside to the substrate is formed in the growth chamber. apparatus. 4. The growth chamber has a cylindrical shape, and a plate-like partition plate for separating respective supply regions of the group III source gas and the group V source gas is provided inside the growth chamber; The notch is formed in the partition plate so that a disk-shaped substrate holder on which the substrate is mounted can pass through the two supply areas by a rotation operation. The vapor phase growth apparatus according to the above. 5. A separation gas supply port for forming a gas flow for separating supply regions of the group III source gas and the group V source gas at an upper portion of the growth chamber, wherein the growth chamber has a cylindrical shape. 2. The method according to claim 1, further comprising:
Or the vapor phase epitaxy apparatus according to any one of 2. 6. The growth chamber has a cylindrical shape, and a plate-like partition plate for separating respective supply regions of the group III source gas and the group V source gas is provided inside the growth chamber; The notch is formed in the partition plate so that a substantially conical substrate holder on which a plurality of the substrates are mounted can pass through the two supply regions by a rotation operation. 3. The vapor phase growth apparatus according to claim 1. 7. The growth chamber has a cylindrical shape, and a substantially cylindrical substrate holder on which a substrate is mounted on an inner wall portion is provided inside the growth chamber.
The vapor phase growth apparatus according to claim 1 or 2, further comprising a plate-like partition plate for separating supply regions of the group II source gas and the group V source gas.