JPH10223486A - Aluminum foil for electrolytic-capacitor electrode - Google Patents

Aluminum foil for electrolytic-capacitor electrode

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Publication number
JPH10223486A
JPH10223486A JP2467197A JP2467197A JPH10223486A JP H10223486 A JPH10223486 A JP H10223486A JP 2467197 A JP2467197 A JP 2467197A JP 2467197 A JP2467197 A JP 2467197A JP H10223486 A JPH10223486 A JP H10223486A
Authority
JP
Japan
Prior art keywords
ppm
foil
aluminum foil
aluminum
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2467197A
Other languages
Japanese (ja)
Other versions
JP3590229B2 (en
Inventor
Tomoaki Yamanoi
智明 山ノ井
Kimitoku Sugimoto
公徳 杉本
Ichizo Tsukuda
市三 佃
Tadao Fujihira
忠雄 藤平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Aluminum Can Corp
Original Assignee
Showa Aluminum Corp
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Filing date
Publication date
Application filed by Showa Aluminum Corp filed Critical Showa Aluminum Corp
Priority to JP02467197A priority Critical patent/JP3590229B2/en
Publication of JPH10223486A publication Critical patent/JPH10223486A/en
Application granted granted Critical
Publication of JP3590229B2 publication Critical patent/JP3590229B2/en
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Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To restrain crystal particles from becoming coarse and large after their heating by a method wherein three elements Cu, Sb and Ga in respectively specific contents coexist in an aluminum foil alloy of specific purity. SOLUTION: In an aluminum foil for an electrolytic-capacitor electrode, its aluminum purity is at 99.9% or higher, and 2 to 30ppm of Cu, 5 to 100ppm of Sb and 5 to 100ppm of Ga are contained. In addition to Cu, Sb and Ga in respective ranges which are used as fundamentally contained elements, 0.1 to 5ppm of Pb, or 1 to 50ppm of Zn, or 0.1 to 5ppm of Pb, or 0.1 to 5ppm of Pb and 1 to 50ppm of Zn are contained. Thereby, it is possible to prevent coarse and large crystals from growing after their heating treatment. As a result, it is possible to obtain the aluminum foil which obtains a large area expansion rate by an etching treatment, whose capacitance is large and which is excellent in an electric characteristic.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、電解コンデンサ
電極用アルミニウム箔に関する。
The present invention relates to an aluminum foil for an electrode of an electrolytic capacitor.

【0002】なお、この明細書において、ppm の単位は
重量を示すものである。
[0002] In this specification, the unit of ppm indicates weight.

【0003】[0003]

【従来の技術】アルミニウム電解コンデンサ用電極材と
して一般に用いられるアルミニウム箔には、その実効面
積を拡大して単位面積当たりの静電容量を増大するた
め、通常、電気化学的あるいは化学的エッチング処理が
施される。
2. Description of the Related Art An aluminum foil generally used as an electrode material for an aluminum electrolytic capacitor is usually subjected to an electrochemical or chemical etching treatment in order to increase its effective area and increase the capacitance per unit area. Will be applied.

【0004】高圧用と呼ばれるトンネル型エッチングが
施されるタイプの陽極箔においては、箔面に対して垂直
方向の結晶方位が(100)方位を有する立方体集合組
織を優先的に成長させることにより効果的に静電容量増
大を図りうることが既に知られている。そして、前記結
晶における立方体方位占有率を高めるために、焼鈍条件
や箔の表面粗度についての種々の提案がなされている
(特開昭47−9953号、特開昭62−228456
号等)。また、一方で箔材料の合金組成により前記立方
体方位占有率を高めることも種々提案され、箔材料とし
て微量のSbを添加したアルミニウム合金の使用が提案
されている。(特開昭50−104710号、特公昭5
9−12736号、特開平7−150280号等)。
[0004] In the anode foil of the type subjected to tunnel type etching called for high pressure, the effect is obtained by preferentially growing a cubic texture having a (100) crystal orientation perpendicular to the foil surface. It is already known that the capacitance can be increased in practice. Various proposals have been made on annealing conditions and foil surface roughness in order to increase the cubic orientation occupancy of the crystal (Japanese Patent Application Laid-Open Nos. 47-9953 and 62-228456).
No.). On the other hand, various proposals have been made to increase the cubic orientation occupancy by the alloy composition of the foil material, and the use of an aluminum alloy to which a small amount of Sb has been added as the foil material has been proposed. (Japanese Unexamined Patent Publication No. 50-104710,
No. 9-12736 and JP-A-7-150280).

【0005】[0005]

【発明が解決しようとする課題】しかしながら、前記合
金組成の箔材料を用いても、最終焼鈍温度を上げると結
晶粒が粗大化して静電容量を低下させるという問題点が
あった。
However, even when a foil material having the above-mentioned alloy composition is used, there is a problem that when the final annealing temperature is increased, the crystal grains become coarse and the capacitance is reduced.

【0006】さらに、低圧用と呼ばれるスポンジ型エッ
チングが施されるタイプの陽極箔においては、最終乾燥
工程における加熱処理で結晶粒が粗大成長するとエッチ
ド箔の強度が著しく低下して箔が破断するという問題点
もあった。
Further, in the anode foil of the type subjected to sponge type etching called for low pressure, if the crystal grains grow coarse in the heat treatment in the final drying step, the strength of the etched foil is remarkably reduced and the foil is broken. There were also problems.

【0007】この発明は、かかる技術的背景に鑑みてな
されたものであって、加熱処理による結晶粒の粗大化を
抑止し、ひいては静電容量を増大するとともに箔強度を
維持し得る電解コンデンサ電極用アルミニウム箔の提供
を目的とする。
The present invention has been made in view of such technical background, and has been made in consideration of the above technical background, and is capable of suppressing the crystal grains from being coarsened by the heat treatment, thereby increasing the capacitance and maintaining the foil strength. The purpose is to provide aluminum foil for use.

【0008】[0008]

【課題を解決するための手段】上記目的を達成するため
に、発明者らは鋭意研究の結果、Cu、SbおよびGa
の3元素が共存することで、加熱後の結晶粒の粗大化を
抑止できることを見出だした。
Means for Solving the Problems In order to achieve the above object, the present inventors have made intensive studies and found that Cu, Sb and Ga
It has been found that the coexistence of the three elements can suppress the coarsening of the crystal grains after heating.

【0009】この発明の電解コンデンサ電極用アルミニ
ウム箔は、かかる知見に基いてなされたものであって、
箔合金組成において、アルミニウム純度が99.9%以
上であるとともに、Cu:2〜30ppm 、Sb:5〜1
00ppm およびGa:5〜100ppm を含有しているこ
とを基本要旨とする。
[0009] The aluminum foil for an electrolytic capacitor electrode of the present invention has been made based on such knowledge.
In the foil alloy composition, aluminum purity is 99.9% or more, Cu: 2 to 30 ppm, Sb: 5-1.
The basic gist is that it contains 00 ppm and Ga: 5 to 100 ppm.

【0010】さらに、この発明の電解コンデンサ電極用
アルミニウム箔は、前記範囲のCuSbおよびGaを基
本含有元素として、これらの基本含有元素の他にさらに
Pb:0.1〜5ppm を含有するもの、これらの基本含
有元素の他にZn:1〜50を含有するもの、これらの
基本含有元素にPb:0.1〜5ppm およびZn:1〜
50ppm を含有するものである。
Further, the aluminum foil for an electrode of an electrolytic capacitor according to the present invention is characterized in that CuSb and Ga in the above-mentioned range are contained as basic elements, and in addition to these basic elements, Pb: 0.1 to 5 ppm is further contained. Containing Zn: 1 to 50 in addition to the basic element of Pb: 0.1 to 5 ppm of Pb and Zn: 1 to
It contains 50 ppm.

【0011】この発明に係る電解コンデンサ電極用アル
ミニウム箔の合金組成において、アルミニウム純度に9
9.9%以上を必要とするのは、99.9%未満の純度
では、エッチング時にエッチングピットの成長が多くの
不純物の存在によって阻害され、本発明の微量添加元素
によってもなお均一な深いトンネル状のエッチングピッ
トを形成できず、従って静電容量の高いアルミニウム箔
を得ることができないからである。好ましくはアルミニ
ウム純度を99.95%以上とするのが良い。
[0011] In the alloy composition of the aluminum foil for an electrolytic capacitor electrode according to the present invention, the aluminum purity is 9%.
The requirement of 9.9% or more is that at a purity of less than 99.9%, the growth of etching pits is hindered by the presence of many impurities at the time of etching, and even with the trace addition element of the present invention, a uniform deep tunnel is obtained. This is because it is not possible to form an etching pit in the shape of a circle, and thus it is impossible to obtain an aluminum foil having a high capacitance. Preferably, the aluminum purity is 99.95% or more.

【0012】また、基本含有元素であるCu、Sbおよ
びGaは、それぞれ単独でエッチング特性を向上させる
他、共存することにより加熱後の再結晶粒の成長速度を
抑えて結晶粒の粗大化を抑える効果があり、静電容量の
増大および箔強度の維持に寄与する。即ち、Cuは、A
lマトリックス中に固溶することにより箔の溶解性を増
してエッチングピットの成長を促進し、静電容量を増大
させる。Cu含有量が2ppm 未満ではこのような効果に
乏しく、30ppm を超えると局部溶解が強まって、エッ
チングピットの均一分布を妨げ、ひいては静電容量を低
下させるため、30ppm 以下とする必要がある。好まし
いCu含有量の下限値は5ppm であり、上限値は20pp
m である。Sbは、エッチングピットを高密度かつ均一
に分布させることにより静電容量を増大させる。Sb含
有量が5ppm 未満ではこのような効果に乏しく、100
ppm を超えると著しい表面溶解が起こり、高静電容量箔
を得ることができない。従って、Sb含有量は5〜10
0ppm とする必要があり、好ましいSb含有量の下限値
は5ppm 、上限値は50ppm である。また、Gaは、A
lマトリックス中に固溶して箔表面の溶解性を増すこと
によりエッチングピットの成長を促進する効果がある。
Ga含有量は、5ppm 未満では前記効果に乏しく、10
0ppm を超えると過溶解が生じるため、5〜100ppm
の範囲とする必要がある。特に好ましいGa含有量の下
限値は5ppm であり、上限値は20ppm である。
In addition, Cu, Sb, and Ga, which are basic contained elements, independently improve the etching characteristics, and coexist with each other to suppress the growth rate of recrystallized grains after heating, thereby suppressing coarsening of crystal grains. It has an effect and contributes to increase in capacitance and maintenance of foil strength. That is, Cu
The solid solution in the matrix increases the solubility of the foil, promotes the growth of etching pits, and increases the capacitance. If the Cu content is less than 2 ppm, such effects are poor. If the Cu content is more than 30 ppm, local dissolution is strengthened, disturbing the uniform distribution of etching pits, and lowering the capacitance. The lower limit of the preferred Cu content is 5 ppm, and the upper limit is 20 pp.
m. Sb increases the capacitance by distributing the etching pits densely and uniformly. If the Sb content is less than 5 ppm, such an effect is poor, and
If it exceeds ppm, remarkable surface melting occurs, and a high capacitance foil cannot be obtained. Therefore, the Sb content is 5 to 10
The lower limit of the preferred Sb content is 5 ppm, and the upper limit is 50 ppm. Ga is A
l has the effect of promoting the growth of etching pits by increasing the solubility of the foil surface by forming a solid solution in the matrix.
If the Ga content is less than 5 ppm, the above effect is poor, and
Exceeding 0 ppm causes over-dissolution, so 5-100 ppm
Must be within the range. A particularly preferred lower limit of the Ga content is 5 ppm, and an upper limit is 20 ppm.

【0013】なお、結晶粒の粗大化を阻止する効果は、
Cu、Sb、Gaの各上限値を超えてもさらに大きくな
るが、その一方で箔が過剰に溶解され、粗大粒の発生抑
制効果を上回るエッチング特性の低下があり、却って静
電容量が低下する。そのため、本発明においては、前記
各元素の含有量の上限値を前述の範囲に定めている。
The effect of preventing the crystal grains from coarsening is as follows.
Even if it exceeds each upper limit of Cu, Sb, and Ga, it becomes larger, but on the other hand, the foil is excessively melted, and there is a decrease in etching characteristics exceeding the effect of suppressing the generation of coarse particles, and on the contrary, the capacitance decreases. . For this reason, in the present invention, the upper limit of the content of each of the above elements is set in the above-mentioned range.

【0014】さらに、この発明の電解コンデンサ電極用
アルミニウム箔では、箔合金組成において、前記基本含
有元素の他に、PbまたはZn、あるいは両元素を添加
することにより、相乗的にエッチング特性を向上させて
静電容量の増大を図ることができる。
Further, in the aluminum foil for an electrolytic capacitor electrode of the present invention, by adding Pb or Zn, or both elements in addition to the above basic contained elements in the foil alloy composition, the etching characteristics can be improved synergistically. Thus, the capacitance can be increased.

【0015】Pbは、箔表面の溶解性を増すことにより
エッチング初期におけるエッチングピットの局部溶解を
抑制する効果があり、エッチングピットの均一分布を図
ることができる。このようなPbの含有量は、0.1pp
m 未満では前記効果に乏しく、5ppm を超えると過溶解
が生じるため、0.1〜5ppm の範囲とする必要があ
る。特に好ましいPb含有量の下限値は0.3ppm であ
り、上限値は2ppm である。
Pb has the effect of suppressing the local dissolution of etching pits at the beginning of etching by increasing the solubility of the foil surface, and can achieve a uniform distribution of etching pits. The content of such Pb is 0.1 pp
If it is less than m, the above effect is poor, and if it exceeds 5 ppm, excessive dissolution occurs, so it is necessary to be in the range of 0.1 to 5 ppm. A particularly preferred lower limit of the Pb content is 0.3 ppm, and an upper limit is 2 ppm.

【0016】Znは、Alマトリックス中に固溶して箔
表面の溶解性を増すことによりエッチングピットの成長
を促進する効果がある。Zn含有量は、1ppm 未満では
前記効果に乏しく、50ppm を超えると過溶解が生じる
ため、1〜50ppm の範囲とする必要がある。特に好ま
しいZn含有量の下限値はそれぞれ5ppm であり、上限
値はそれぞれ20ppm である。
Zn has an effect of promoting the growth of etching pits by increasing the solubility of the foil surface by forming a solid solution in the Al matrix. If the Zn content is less than 1 ppm, the above effect is poor, and if it exceeds 50 ppm, excessive dissolution occurs, so it is necessary to be in the range of 1 to 50 ppm. A particularly preferred lower limit of the Zn content is 5 ppm, and an upper limit is 20 ppm.

【0017】[0017]

【実施例】次に、この発明の電解コンデンサ電極用アル
ミニウム箔の具体的実施例について説明する。
Next, specific examples of the aluminum foil for an electrolytic capacitor electrode of the present invention will be described.

【0018】まず、表1に示す実施例1〜11、比較例
12〜18の各種組成のアルミニウム鋳塊を面削した
後、熱間圧延、冷間圧延(中間焼鈍を含む)を施し、厚
さ100μmの箔とした。中間焼鈍条件は、250℃×
10時間である。
First, aluminum ingots of various compositions of Examples 1 to 11 and Comparative Examples 12 to 18 shown in Table 1 were face-cut, and then subjected to hot rolling and cold rolling (including intermediate annealing). The thickness was 100 μm. Intermediate annealing conditions are 250 ° C x
10 hours.

【0019】上述のようにして作製した各アルミニウム
箔について、粒径1000μm以上の粗大粒子の有無を
調べた。これらの結果を表1に示す。
Each of the aluminum foils produced as described above was examined for the presence of coarse particles having a particle size of 1000 μm or more. Table 1 shows the results.

【0020】次に、各アルミニウム箔について、以下の
条件でエッチングを実施したのち、400℃で10分間
乾燥させた。
Next, each aluminum foil was etched under the following conditions, and then dried at 400 ° C. for 10 minutes.

【0021】 [エッチング条件] 前処理 液組成:0.1%NaOH、液温:30℃、時間:1分 電解エッチング 液組成:10%HCl+0.1%H2 SO4 、液温:40℃ 電流密度:交流60Hz、20A/dm2 、時間:8分 そして、乾燥後の箔の折曲強度について次の方法により
試験を行った。その結果を表1に示す。
[Etching Conditions] Pretreatment Liquid composition: 0.1% NaOH, liquid temperature: 30 ° C., time: 1 minute Electrolytic etching Liquid composition: 10% HCl + 0.1% H 2 SO 4 , liquid temperature: 40 ° C. Density: AC 60 Hz, 20 A / dm 2 , Time: 8 minutes The bending strength of the dried foil was tested by the following method. Table 1 shows the results.

【0022】[折曲試験]JIS P8115 に基づ
くMIT形自動折曲試験機を用い、10mm×150mmの
短冊状に切出した試験片を曲率半径0.5mm、折曲げ角
度90°で繰返し折曲げを行った時の折曲げ回数を測定
した。
[Bending Test] Using an MIT type automatic bending tester based on JIS P8115, a test piece cut into a 10 mm × 150 mm strip was repeatedly bent at a curvature radius of 0.5 mm and a bending angle of 90 °. The number of times of bending was measured.

【0023】さらに、アルミニウム箔をリン酸アンモニ
ウム(NHPO)2g/l,液温90℃、電流
密度10mA/cmで20Vに化成したときの静電容
量を測定した。その結果を、比較例12の静電容量を1
00としたときの相対比較にて表1に示す。
Further, the capacitance when the aluminum foil was converted to 20 V with ammonium phosphate (NH 4 H 2 PO 4 ) 2 g / l, a liquid temperature of 90 ° C. and a current density of 10 mA / cm 2 was measured. The result is shown as the capacitance of Comparative Example 12 being 1
Table 1 shows a relative comparison when the value is set to 00.

【0024】[0024]

【表1】 [Table 1]

【0025】表1の結果から、本発明範囲のCu、Sb
およびGaが共存する実施例は、本発明範囲を逸脱する
比較例に較べて焼鈍後に粗大結晶粒の発生がなく、エッ
チングにより静電容量を増大し得ることを確認し得た。
Cu、SbおよびGaの他に所定範囲のPb、Znを添
加することにより、さらに静電容量の増大しうることも
確認し得た。
From the results in Table 1, it can be seen that Cu, Sb within the scope of the present invention.
In Examples where Ga and Ga coexisted, it was confirmed that there was no generation of coarse crystal grains after annealing and that the capacitance could be increased by etching, as compared with Comparative Examples deviating from the scope of the present invention.
It was also confirmed that by adding a predetermined range of Pb and Zn in addition to Cu, Sb and Ga, the capacitance could be further increased.

【0026】また、粗大結晶粒の発生が抑制されたこと
により、エッチング後の乾燥によっても箔強度の低下が
ないことも確認し得た。
Further, it was also confirmed that the generation of coarse crystal grains was suppressed, so that the foil strength was not reduced even by drying after etching.

【0027】[0027]

【発明の効果】この発明に係る電解コンデンサ電極用ア
ルミニウム箔は、箔合金組成において、アルミニウム純
度が99.9%以上であるとともに、Cu:2〜30pp
m 、Sb:5〜100ppm およびGa:5〜100ppm
を含有しているから、加熱処理後の粗大結晶の成長が抑
制される。そのため、エッチング処理により極めて大き
な拡面率を得ることができ、大きな静電容量を有し電気
的特性に優れた電解コンデンサ電極用アルミニウム箔と
なしうる。また、粗大結晶の成長が抑制されることによ
り箔強度も維持される。
The aluminum foil for an electrolytic capacitor electrode according to the present invention has an aluminum purity of 99.9% or more and a Cu content of 2 to 30 pp in the foil alloy composition.
m, Sb: 5 to 100 ppm and Ga: 5 to 100 ppm
, The growth of coarse crystals after the heat treatment is suppressed. Therefore, an extremely large surface area can be obtained by the etching process, and the aluminum foil for an electrolytic capacitor electrode having a large capacitance and excellent electrical characteristics can be obtained. Further, the foil strength is maintained by suppressing the growth of coarse crystals.

【0028】また、箔合金組成において、Cu、Sbお
よびGaの基本含有元素の他に、Pb:0.1〜5ppm
を含有するもの、Zn:1〜50ppm を含有するもの、
あるいは、Pb:0.1〜5ppm およびZn:1〜50
ppm を含有するものは、いずれもさらに箔の溶解性が増
し、さらに大きな静電容量を有する電解コンデンサ電極
用アルミニウム箔となしうる。
In the foil alloy composition, in addition to the basic elements of Cu, Sb and Ga, Pb: 0.1 to 5 ppm
Containing, Zn: 1 to 50 ppm,
Alternatively, Pb: 0.1 to 5 ppm and Zn: 1 to 50
In any case containing ppm, the solubility of the foil is further increased, and the aluminum foil for an electrode of an electrolytic capacitor having a larger capacitance can be obtained.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 藤平 忠雄 堺市海山町6丁224番地 昭和アルミニウ ム株式会社内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Tadao Fujihira, 224 Kaiyamacho, Sakai City Showa Aluminum Co., Ltd.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 箔合金組成において、アルミニウム純度
が99.9%以上であるとともに、Cu:2〜30ppm
、Sb:5〜100ppm およびGa:5〜100ppm
を含有していることを特徴とする電解コンデンサ電極用
アルミニウム箔。
1. A foil alloy composition having an aluminum purity of 99.9% or more and Cu: 2 to 30 ppm.
, Sb: 5-100 ppm and Ga: 5-100 ppm
An aluminum foil for an electrode of an electrolytic capacitor, characterized by containing:
【請求項2】 箔合金組成において、アルミニウム純度
が99.9%以上であるとともに、Cu:2〜30ppm
、Sb:5〜100ppm 、Ga:5〜100ppm およ
びPb:0.1〜5ppm を含有していることを特徴とす
る電解コンデンサ電極用アルミニウム箔。
2. A foil alloy composition having an aluminum purity of 99.9% or more and Cu: 2 to 30 ppm.
, Sb: 5 to 100 ppm, Ga: 5 to 100 ppm, and Pb: 0.1 to 5 ppm.
【請求項3】 箔合金組成において、アルミニウム純度
が99.9%以上であるとともに、Cu:2〜30ppm
、Sb:5〜100ppm 、Ga:5〜100ppm およ
びZn:1〜50ppm を含有していることを特徴とする
電解コンデンサ電極用アルミニウム箔。
3. The foil alloy composition has an aluminum purity of 99.9% or more and Cu: 2 to 30 ppm.
, Sb: 5 to 100 ppm, Ga: 5 to 100 ppm, and Zn: 1 to 50 ppm.
【請求項4】 箔合金組成において、アルミニウム純度
が99.9%以上であるとともに、Cu:2〜30ppm
、Sb:5〜100ppm 、Ga:5〜100ppm 、P
b:0.1〜5ppm およびZn:1〜50ppm を含有し
ていることを特徴とする電解コンデンサ電極用アルミニ
ウム箔。
4. In the foil alloy composition, the aluminum purity is 99.9% or more and Cu: 2 to 30 ppm.
, Sb: 5-100 ppm, Ga: 5-100 ppm, P
b: An aluminum foil for an electrode of an electrolytic capacitor, characterized by containing 0.1 to 5 ppm and Zn: 1 to 50 ppm.
JP02467197A 1997-02-07 1997-02-07 Aluminum foil for electrolytic capacitor electrodes Expired - Fee Related JP3590229B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP02467197A JP3590229B2 (en) 1997-02-07 1997-02-07 Aluminum foil for electrolytic capacitor electrodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02467197A JP3590229B2 (en) 1997-02-07 1997-02-07 Aluminum foil for electrolytic capacitor electrodes

Publications (2)

Publication Number Publication Date
JPH10223486A true JPH10223486A (en) 1998-08-21
JP3590229B2 JP3590229B2 (en) 2004-11-17

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Country Link
JP (1) JP3590229B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000199026A (en) * 1998-12-28 2000-07-18 Nippon Foil Mfg Co Ltd Hard aluminum foil for electrolytic capacitor electrode and its production
JP2007146269A (en) * 2004-12-21 2007-06-14 Showa Denko Kk Aluminum material for electrolytic capacitor electrode, method for producing electrode material for electrolytic capacitor, and anode material for aluminum electrolytic capacitor and aluminum electrolytic capacitor
JP2012144809A (en) * 2005-05-31 2012-08-02 Showa Denko Kk Aluminum material for electrolytic capacitor electrode, method for manufacturing electrode material for electrolytic capacitor, anode material for aluminum electrolytic capacitor, and aluminum electrolytic capacitor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000199026A (en) * 1998-12-28 2000-07-18 Nippon Foil Mfg Co Ltd Hard aluminum foil for electrolytic capacitor electrode and its production
JP2007146269A (en) * 2004-12-21 2007-06-14 Showa Denko Kk Aluminum material for electrolytic capacitor electrode, method for producing electrode material for electrolytic capacitor, and anode material for aluminum electrolytic capacitor and aluminum electrolytic capacitor
JP2012144809A (en) * 2005-05-31 2012-08-02 Showa Denko Kk Aluminum material for electrolytic capacitor electrode, method for manufacturing electrode material for electrolytic capacitor, anode material for aluminum electrolytic capacitor, and aluminum electrolytic capacitor

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