JPH10209409A - Solid-state image pick up element - Google Patents

Solid-state image pick up element

Info

Publication number
JPH10209409A
JPH10209409A JP9022028A JP2202897A JPH10209409A JP H10209409 A JPH10209409 A JP H10209409A JP 9022028 A JP9022028 A JP 9022028A JP 2202897 A JP2202897 A JP 2202897A JP H10209409 A JPH10209409 A JP H10209409A
Authority
JP
Japan
Prior art keywords
light
chip lens
layer
lens
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9022028A
Other languages
Japanese (ja)
Other versions
JP3648736B2 (en
Inventor
Hideo Kanbe
秀夫 神戸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP02202897A priority Critical patent/JP3648736B2/en
Publication of JPH10209409A publication Critical patent/JPH10209409A/en
Application granted granted Critical
Publication of JP3648736B2 publication Critical patent/JP3648736B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Solid State Image Pick-Up Elements (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a solid-state image pick up element, which is high in sensitivity and has little irregularity in sensitivity in each pixel. SOLUTION: The focal point P of an upper layer of an on-chip lens 18 is positioned on the side upper than a lower layer of an on-chip lens 21 under the lens 18, and when the distance between the focal point P and the lens 21 is assumed Ln and the focal length of the lens 21 is assumed fl, the fl and the Ln are used on the condition of fl<Ln. Owing to this, while a divergence of light 19 is inhibited by the lenses 18 and 21 of the upper and lower layers, this light 19 can be led to a sensor and it is possible to lead the light 10 to the sensor without generating the eclipse of the light 19 due to a light-shielding film 15 or the like.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本願の発明は、センサの上層
にオンチップレンズを有する固体撮像素子に関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state imaging device having an on-chip lens on a sensor.

【0002】[0002]

【従来の技術】図6は、本願の発明の一従来例を示して
いる。この一従来例では、半導体基板11中に各画素の
センサ(図示せず)や転送部(図示せず)等が形成され
ており、半導体基板11の表面にゲート絶縁膜12が形
成されている。ゲート絶縁膜12上には転送電極13が
形成されており、転送電極13は絶縁膜14等に覆われ
ている。
2. Description of the Related Art FIG. 6 shows a conventional example of the present invention. In this conventional example, a sensor (not shown) and a transfer unit (not shown) of each pixel are formed in a semiconductor substrate 11, and a gate insulating film 12 is formed on the surface of the semiconductor substrate 11. . A transfer electrode 13 is formed on the gate insulating film 12, and the transfer electrode 13 is covered with an insulating film 14 or the like.

【0003】絶縁膜14等は遮光膜15に覆われてお
り、この遮光膜15のうちでセンサ上の部分に開口15
aが形成されている。遮光膜15等は平坦化膜16に覆
われており、カラーフィルタ層17及びオンチップレン
ズ18が平坦化膜16上に順次に形成されている。この
様な一従来例では、オンチップレンズ18によって光1
9がセンサに集められるので、オンチップレンズ18が
設けられていない構造に比べて感度が高い。
The insulating film 14 and the like are covered with a light-shielding film 15, and an opening 15 is formed in a portion of the light-shielding film 15 above a sensor.
a is formed. The light-shielding film 15 and the like are covered with the flattening film 16, and the color filter layer 17 and the on-chip lens 18 are sequentially formed on the flattening film 16. In such a conventional example, the light 1 is
Since 9 is collected in the sensor, the sensitivity is higher than a structure in which the on-chip lens 18 is not provided.

【0004】[0004]

【発明が解決しようとする課題】ところが、各画素の面
積が縮小されても、転送電極13の抵抗の増大や遮光膜
15の遮光能力の低下等を防止するために、転送電極1
3や遮光膜15等を薄くすることが困難である。このた
め、開口15aの大きさに対する遮光膜15等の高さの
比率が大きくなってきており、その結果、図6にも示し
た様に、オンチップレンズ18で集められても遮光膜1
5等によるけられでセンサまで導かれない光19が生じ
易かった。
However, even if the area of each pixel is reduced, the transfer electrode 1 is required to prevent the resistance of the transfer electrode 13 from increasing and the light-shielding ability of the light-shielding film 15 from decreasing.
It is difficult to reduce the thickness of the third light-shielding film 15 and the like. For this reason, the ratio of the height of the light shielding film 15 and the like to the size of the opening 15a is increasing, and as a result, as shown in FIG.
Light 19, which was not guided to the sensor due to being shaken by 5 or the like, was likely to occur.

【0005】このため、図6に示した一従来例では、高
い感度を得ることが困難であった。また、遮光膜15の
パターンが画素毎にばらついており、更に、画素によっ
て光19の入射角度が異なっていてけられの割合も異な
るので、光19にけられが生じていると、画素毎の感度
のむらも生じ易かった。
For this reason, it was difficult to obtain high sensitivity in the conventional example shown in FIG. Further, the pattern of the light-shielding film 15 varies from pixel to pixel, and furthermore, the incidence angle of the light 19 differs depending on the pixel and the rate of shading differs. It was easy for unevenness to occur.

【0006】[0006]

【課題を解決するための手段】本願の発明による固体撮
像素子は、複数層のオンチップレンズが設けられてお
り、上層の前記オンチップレンズの焦点がその下層の前
記オンチップレンズよりも前記上層側に位置しており、
前記焦点と前記下層のオンチップレンズとの間の距離を
Lnとし、前記下層のオンチップレンズの焦点距離をf
lとすると、 fl<Ln であることを特徴としている。
The solid-state image pickup device according to the present invention has a plurality of layers of on-chip lenses, and the focus of the upper-layer on-chip lens is higher than that of the lower-layer on-chip lens. Located on the side
The distance between the focal point and the lower-layer on-chip lens is Ln, and the focal length of the lower-layer on-chip lens is f
When l, fl <Ln.

【0007】本願の発明による固体撮像素子は、 Ln<2fl であることが好ましい。[0007] The solid-state imaging device according to the present invention preferably satisfies Ln <2fl.

【0008】本願の発明による固体撮像素子は、前記上
層のオンチップレンズの焦点距離をfuとすると、 fl<fu であることが好ましい。
In the solid-state imaging device according to the present invention, it is preferable that fl <fu if the focal length of the upper-layer on-chip lens is fu.

【0009】本願の発明による固体撮像素子では、複数
層のオンチップレンズのうちで上層のオンチップレンズ
の焦点がその下層のオンチップレンズよりも上層側に位
置しており、しかも、上層のオンチップレンズの焦点と
下層のオンチップレンズとの間の距離が下層のオンチッ
プレンズの焦点距離よりも長いので、上層のオンチップ
レンズで一旦収束された後に発散した光が下層のオンチ
ップレンズで再び収束される。
In the solid-state imaging device according to the present invention, the focal point of the upper-layer on-chip lens among the multiple-layer on-chip lenses is located on the upper layer side with respect to the lower-layer on-chip lens. Since the distance between the focal point of the chip lens and the lower-layer on-chip lens is longer than the focal length of the lower-layer on-chip lens, the light that is once converged by the upper-layer on-chip lens and then diverges by the lower-layer on-chip lens. It converges again.

【0010】このため、各層のオンチップレンズで光の
発散を抑制しつつ、この光をセンサまで導くことができ
る。従って、センサ上の遮光膜の開口の大きさに対する
遮光膜等の高さの比率が相対的に大きくても、遮光膜等
による光のけられを生じることなく、この光をセンサま
で導くことができる。
For this reason, the light can be guided to the sensor while suppressing the divergence of the light by the on-chip lenses of the respective layers. Therefore, even if the ratio of the height of the light-shielding film to the size of the opening of the light-shielding film on the sensor is relatively large, this light can be guided to the sensor without causing light shading by the light-shielding film or the like. it can.

【0011】また、上層のオンチップレンズの焦点と下
層のオンチップレンズとの間の距離が下層のオンチップ
レンズの焦点距離の2倍よりも短ければ、下層のオンチ
ップレンズの径が小さくても、上層のオンチップレンズ
で一旦収束された後に発散した光のうちで下層のオンチ
ップレンズに入射しない光が少ない。
If the distance between the focal point of the upper-layer on-chip lens and the lower-layer on-chip lens is smaller than twice the focal length of the lower-layer on-chip lens, the diameter of the lower-layer on-chip lens becomes smaller. Also, among the light diverged after being once converged by the upper-layer on-chip lens, there is little light that does not enter the lower-layer on-chip lens.

【0012】また、下層のオンチップレンズの焦点距離
が上層のオンチップレンズの焦点距離よりも短ければ、
下層のオンチップレンズの径が小さくても、上層のオン
チップレンズで一旦収束された後に発散した光のうちで
下層のオンチップレンズに入射しない光が少ない。
If the focal length of the lower-layer on-chip lens is shorter than the focal length of the upper-layer on-chip lens,
Even if the diameter of the lower-layer on-chip lens is small, of the light that is once converged by the upper-layer on-chip lens and diverges, there is little light that does not enter the lower-layer on-chip lens.

【0013】[0013]

【発明の実施の形態】以下、本願の発明の一実施形態
を、図1〜5を参照しながら説明する。図1が、本実施
形態を示している。本実施形態では、オンチップレンズ
18とは別のオンチップレンズ21がセンサとオンチッ
プレンズ18との間に設けられていて、オンチップレン
ズ18、21が2層になっている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to FIGS. FIG. 1 shows the present embodiment. In the present embodiment, an on-chip lens 21 different from the on-chip lens 18 is provided between the sensor and the on-chip lens 18, and the on-chip lenses 18 and 21 have two layers.

【0014】オンチップレンズ18の焦点距離をfuと
すると、この固体撮像素子の表面に垂直に入射した光1
9は、オンチップレンズ18からfuの距離の焦点Pに
収束する。この焦点Pが遮光膜15の上面付近の高さに
位置する様に、平坦化膜16の厚さ等が選択されてい
る。
Assuming that the focal length of the on-chip lens 18 is fu, the light 1 that is vertically incident on the surface of the solid-state imaging device
9 converges on a focal point P at a distance of fu from the on-chip lens 18. The thickness and the like of the flattening film 16 are selected so that the focal point P is located at a height near the upper surface of the light shielding film 15.

【0015】また、オンチップレンズ21の焦点距離を
flとし、焦点Pからオンチップレンズ21までの距離
をLnとすると、 fl<Ln<2fl fl<fu の関係が満たされている。以上の点を除いて、本実施形
態も図6に示した一従来例と実質的に同様の構成を有し
ている。
When the focal length of the on-chip lens 21 is fl and the distance from the focal point P to the on-chip lens 21 is Ln, the relationship of fl <Ln <2fl fl <fu is satisfied. Except for the above points, this embodiment also has a configuration substantially similar to that of the conventional example shown in FIG.

【0016】本実施形態では、図1からも明らかな様
に、オンチップレンズ18で光19が焦点Pに一旦収束
されており、焦点Pを通過して発散した光19もオンチ
ップレンズ21に入射して再び収束されている。つま
り、オンチップレンズ18、21で光19の発散が抑制
されつつ、この光19がセンサまで導かれている。
In this embodiment, as is clear from FIG. 1, the light 19 is once converged to the focal point P by the on-chip lens 18, and the light 19 diverging through the focal point P is also transmitted to the on-chip lens 21. It is incident and converged again. That is, the light 19 is guided to the sensor while the divergence of the light 19 is suppressed by the on-chip lenses 18 and 21.

【0017】しかも、オンチップレンズ18で光19を
収束している焦点Pが、遮光膜15の上面付近の高さに
位置している。従って、遮光膜15の開口15aの大き
さに対する遮光膜15等の高さの比率が大きくても、遮
光膜15等による光19のけられを生じることなく、こ
の光19をセンサまで導くことができる。
Further, the focal point P at which the light 19 is converged by the on-chip lens 18 is located at a height near the upper surface of the light shielding film 15. Therefore, even if the ratio of the height of the light shielding film 15 and the like to the size of the opening 15a of the light shielding film 15 is large, the light 19 can be guided to the sensor without causing the light 19 to be shaken by the light shielding film 15 and the like. it can.

【0018】一方、本実施形態が満たしている上述の
の条件に反してfl=Lnであると、図4に示す様に、
オンチップレンズ18を透過した光19は収束されずに
平行光になるので、遮光膜15のうちで半導体基板11
に近い部分で光19のけられが生じ易くなる。なお、f
l>Lnであると、オンチップレンズ18を透過した光
19が発散光になるので、光19のけられが更に生じ易
くなる。
On the other hand, if fl = Ln, contrary to the above condition satisfied by the present embodiment, as shown in FIG.
Since the light 19 transmitted through the on-chip lens 18 is not converged but becomes parallel light, the light
The light 19 is more likely to be shaken in a portion close to. Note that f
If l> Ln, the light 19 transmitted through the on-chip lens 18 becomes divergent light, so that the light 19 is more likely to be blurred.

【0019】また、の条件に反してLn≧2flであ
ると、実際問題として、図5に示す様に、オンチップレ
ンズ18で焦点Pに一旦収束された後に発散した光19
のうちでオンチップレンズ21に入射しない光19が多
い。この様にオンチップレンズ21に入射しない光19
は、遮光膜15の上面等に入射してけられ、感度に寄与
しない。
If Ln.gtoreq.2fl contrary to the above condition, as a practical matter, as shown in FIG. 5, the light 19 which is once converged to the focal point P by the on-chip lens 18 and then diverges.
Of these, most of the light 19 does not enter the on-chip lens 21. The light 19 that does not enter the on-chip lens 21 in this manner
Is incident on the upper surface or the like of the light shielding film 15 and does not contribute to the sensitivity.

【0020】また、の条件に反してfl≧fuである
と、この場合も、実際問題として、オンチップレンズ1
8で焦点Pに一旦収束された後に発散した光19のうち
でオンチップレンズ21に入射しない光19が多い。こ
の様にオンチップレンズ21に入射しない光19は、遮
光膜15の上面等に入射してけられ、感度に寄与しな
い。
If fl ≧ fu contrary to the above condition, also in this case, as a practical problem, the on-chip lens 1
Of the light 19 diverged after being once converged to the focal point P at 8, there are many light 19 that do not enter the on-chip lens 21. The light 19 not incident on the on-chip lens 21 is incident on the upper surface of the light-shielding film 15 or the like, and does not contribute to the sensitivity.

【0021】図2は、平凸状のオンチップレンズ21を
有する固体撮像素子の第1の製造方法を示している。こ
の第1の製造方法でも、図2(a)に示す様に、遮光膜
15に開口15aを形成するまでは従来公知の工程を実
行する。しかし、この第1の製造方法では、遮光膜15
等を平坦化膜16で覆った後、図2(b)に示す様に、
この平坦化膜16のうちで遮光膜15の開口15a上の
部分に凹部16aを形成する。
FIG. 2 shows a first method of manufacturing a solid-state imaging device having a plano-convex on-chip lens 21. Even in the first manufacturing method, as shown in FIG. 2A, a conventionally known process is performed until the opening 15a is formed in the light shielding film 15. However, in the first manufacturing method, the light shielding film 15
Are covered with a flattening film 16, and as shown in FIG.
A recess 16 a is formed in a portion of the flattening film 16 above the opening 15 a of the light shielding film 15.

【0022】次に、図2(c)に示す様に、平坦化膜1
6よりも屈折率の高い樹脂層22を平坦化膜16上に平
坦に塗布して、凹部16aを樹脂層22で埋める。その
後、図2(d)に示す様に、樹脂層22上にカラーフィ
ルタ層17を形成して凹部16a内の樹脂層22でオン
チップレンズ21を形成し、図2(e)に示す様に、カ
ラーフィルタ層17上にオンチップレンズ18を形成す
る。
Next, as shown in FIG.
A resin layer 22 having a refractive index higher than 6 is applied flat on the flattening film 16, and the recess 16 a is filled with the resin layer 22. After that, as shown in FIG. 2D, the color filter layer 17 is formed on the resin layer 22 and the on-chip lens 21 is formed by the resin layer 22 in the concave portion 16a, and as shown in FIG. The on-chip lens 18 is formed on the color filter layer 17.

【0023】図3は、両凸状のオンチップレンズ21を
有する固体撮像素子の第2の製造方法を示している。こ
の第2の製造方法でも、図3(a)〜(c)に示す様
に、樹脂層22を平坦化膜16上に塗布するまでは、図
2に示した第1の製造方法と実質的に同様の工程を実行
する。
FIG. 3 shows a second method of manufacturing a solid-state imaging device having a biconvex on-chip lens 21. Also in this second manufacturing method, as shown in FIGS. 3A to 3C, until the resin layer 22 is applied on the flattening film 16, substantially the same as the first manufacturing method shown in FIG. A similar process is performed.

【0024】しかし、この第2の製造方法では、その
後、図3(d)に示す様に、樹脂層22のうちで凹部1
6a上以外の部分をエッチングして、凹部16a上に断
面が台形状の樹脂層22を残す。そして、図3(e)に
示す様に、断面が台形状の樹脂層22及び平坦化膜16
上に別の平坦化膜23を塗布して樹脂層22でオンチッ
プレンズ21を形成し、図示してはいないが、更に、カ
ラーフィルタ層17及びオンチップレンズ18を形成す
る。
However, according to the second manufacturing method, as shown in FIG.
The portion other than the portion above 6a is etched to leave the resin layer 22 having a trapezoidal cross section on the concave portion 16a. Then, as shown in FIG. 3E, the resin layer 22 having a trapezoidal cross section and the planarizing film 16 are formed.
Another flattening film 23 is applied thereon to form the on-chip lens 21 with the resin layer 22. Although not shown, the color filter layer 17 and the on-chip lens 18 are further formed.

【0025】なお、以上の実施形態ではオンチップレン
ズ18、21が2層であるが、3層以上のオンチップレ
ンズを固体撮像素子に設けることもできる。その場合
も、上層のオンチップレンズで一旦収束された後に発散
した光を下層のオンチップレンズで順次に収束させる。
Although the on-chip lenses 18 and 21 have two layers in the above embodiment, three or more on-chip lenses can be provided in the solid-state imaging device. Also in this case, the light diverged after being once converged by the upper-layer on-chip lens is sequentially converged by the lower-layer on-chip lens.

【0026】[0026]

【発明の効果】本願の発明による固体撮像素子では、セ
ンサ上の遮光膜の開口の大きさに対する遮光膜等の高さ
の比率が相対的に大きくても、遮光膜等による光のけら
れを生じることなく、この光をセンサまで導くことがで
きるので、感度が高く画素毎の感度のむらも少ない。
In the solid-state imaging device according to the present invention, even if the ratio of the height of the light-shielding film to the size of the opening of the light-shielding film on the sensor is relatively large, light is not blocked by the light-shielding film. Since this light can be guided to the sensor without generation, the sensitivity is high and the sensitivity unevenness of each pixel is small.

【0027】また、上層のオンチップレンズの焦点と下
層のオンチップレンズとの間の距離が下層のオンチップ
レンズの焦点距離の2倍よりも短ければ、下層のオンチ
ップレンズの径が小さくても、上層のオンチップレンズ
で一旦収束された後に発散した光のうちで下層のオンチ
ップレンズに入射しない光が少ないので、感度が更に高
い。
If the distance between the focal point of the upper-layer on-chip lens and the lower-layer on-chip lens is shorter than twice the focal length of the lower-layer on-chip lens, the diameter of the lower-layer on-chip lens becomes smaller. Also, the sensitivity is further increased because, of the light diverged after being once converged by the upper-layer on-chip lens, light that does not enter the lower-layer on-chip lens is small.

【0028】また、下層のオンチップレンズの焦点距離
が上層のオンチップレンズの焦点距離よりも短ければ、
下層のオンチップレンズの径が小さくても、上層のオン
チップレンズで一旦収束された後に発散した光のうちで
下層のオンチップレンズに入射しない光が少ないので、
感度が更に高い。
If the focal length of the lower-layer on-chip lens is shorter than the focal length of the upper-layer on-chip lens,
Even if the diameter of the lower-layer on-chip lens is small, there is little light that does not enter the lower-layer on-chip lens among the light diverged after being once converged by the upper-layer on-chip lens.
Higher sensitivity.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本願の発明の一実施形態の概念的な側断面図で
ある。
FIG. 1 is a conceptual side sectional view of an embodiment of the present invention.

【図2】一実施形態の第1の製造方法を工程順に示す側
断面図である。
FIG. 2 is a side sectional view showing a first manufacturing method of one embodiment in the order of steps.

【図3】一実施形態の第2の製造方法を工程順に示す側
断面図である。
FIG. 3 is a side sectional view showing a second manufacturing method of one embodiment in the order of steps.

【図4】一実施形態とは構成が異なる場合の問題点を説
明するための側断面図である。
FIG. 4 is a side sectional view for explaining a problem when the configuration is different from that of the embodiment.

【図5】一実施形態とは構成が異なる別の場合の問題点
を説明するための側断面図である。
FIG. 5 is a side sectional view for explaining a problem in another case having a different configuration from the embodiment.

【図6】本願の発明の一従来例の側断面図である。FIG. 6 is a side sectional view of a conventional example of the present invention.

【符号の説明】[Explanation of symbols]

18、21 オンチップレンズ P 焦点 18, 21 On-chip lens P Focus

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 複数層のオンチップレンズが設けられて
おり、 上層の前記オンチップレンズの焦点がその下層の前記オ
ンチップレンズよりも前記上層側に位置しており、 前記焦点と前記下層のオンチップレンズとの間の距離を
Lnとし、前記下層のオンチップレンズの焦点距離をf
lとすると、 fl<Ln であることを特徴とする固体撮像素子。
1. An on-chip lens having a plurality of layers, wherein a focal point of the upper-layer on-chip lens is located closer to the upper layer than the lower-layer on-chip lens, and the focal point and the lower layer Let Ln be the distance from the on-chip lens and f be the focal length of the lower-layer on-chip lens.
1 is a solid-state imaging device, wherein fl <Ln.
【請求項2】 Ln<2fl であることを特徴とする請求項1記載の固体撮像素子。2. The solid-state imaging device according to claim 1, wherein Ln <2fl. 【請求項3】 前記上層のオンチップレンズの焦点距離
をfuとすると、 fl<fu であることを特徴とする請求項1記載の固体撮像素子。
3. The solid-state imaging device according to claim 1, wherein fl <fu, where fo represents a focal length of the upper-layer on-chip lens.
JP02202897A 1997-01-21 1997-01-21 Solid-state image sensor Expired - Fee Related JP3648736B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP02202897A JP3648736B2 (en) 1997-01-21 1997-01-21 Solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02202897A JP3648736B2 (en) 1997-01-21 1997-01-21 Solid-state image sensor

Publications (2)

Publication Number Publication Date
JPH10209409A true JPH10209409A (en) 1998-08-07
JP3648736B2 JP3648736B2 (en) 2005-05-18

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Country Link
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005072364A (en) * 2003-08-26 2005-03-17 Fuji Film Microdevices Co Ltd Solid state imaging element and its manufacturing method
JP2012182433A (en) * 2011-02-09 2012-09-20 Canon Inc Photoelectric conversion element and photoelectric conversion device using the same, and imaging system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005072364A (en) * 2003-08-26 2005-03-17 Fuji Film Microdevices Co Ltd Solid state imaging element and its manufacturing method
JP2012182433A (en) * 2011-02-09 2012-09-20 Canon Inc Photoelectric conversion element and photoelectric conversion device using the same, and imaging system
US8878115B2 (en) 2011-02-09 2014-11-04 Canon Kabushiki Kaisha Photoelectric conversion element, and photoelectric conversion apparatus and imaging system having a light guide

Also Published As

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