JPH10209119A - Semiconductor processor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor processor which can inhibit adhesion of a reactant to a cooling water piping, by which cleaning work is easy and whose manufacture yield improves. SOLUTION: The upper part (namely, an area facing the inner part of a processing room) of the cooling water piping 14 fixed on the back-side of an upper electrode is covered by a reactant adhesion preventing film 15. The reactant is prevented from being directly adhered to the cooling water piping 14 with the existence of the reactant adhesion preventing film 15. Furthermore, the temperature of the back-side of the cooling water piping 13 comparatively rises and the cooling effect deteriorates with the existence of the reactant adhesion preventing film 15. Thus, the adhesion of the reactant having a characteristic that it easily adheres to a place with a low temperature to the reactant adhesion preventing film 15 is suppressed. The temperature of the front-side (namely, a face which is brought into contact with the upper electrode 11) of the cooling water piping 14 drops and cooling effect on the upper electrode 11 increases.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor processing apparatus such as a dry etching apparatus, and more particularly to a semiconductor processing apparatus having a cooling water pipe on the surface of an electrode.

[0002]

2. Description of the Related Art In the manufacture of semiconductor devices, an etching apparatus or a CVD (Chemical Chemical) is used for fine processing of a semiconductor wafer.
Various semiconductor processing apparatuses such as a vapor deposition (chemical vapor deposition) apparatus are used. Among them, for example, a dry etching apparatus that performs etching using a gas has excellent fine workability as compared with wet etching, and that waste gas treatment is easier than waste liquid treatment,
Current ultra LS due to easy automation
It is an indispensable technology for I (Large Scale Integrated circuit) technology. Examples of the dry etching apparatus include a plasma etching apparatus for performing isotropic etching and a RIE (Reactive Ion Etching) apparatus for performing anisotropic etching with higher etching accuracy.

FIG. 3 shows a sectional structure of a conventional RIE apparatus. In this RIE apparatus, a processing chamber (reaction vessel)
An upper electrode 101 and a lower electrode 102 are arranged above and below in 100 in parallel with each other. A semiconductor wafer 103 to be processed is placed on the lower electrode 102. The inside of the processing chamber 100 is evacuated to a vacuum and a reaction gas is introduced. This RI
In the E device, the upper electrode 101 is set to the ground potential,
A high-frequency voltage is applied to the lower electrode 102 via a capacitor (not shown). As a result, plasma is generated between the upper electrode 101 and the lower electrode 102, and at the same time, a DC negative potential is generated at the voltage application side electrode (lower electrode 102). An isotropic etching is performed.

In this RIE apparatus, since the upper electrode 101 and the lower electrode 102 become hot, they need to be cooled with cooling water. Here, although the cooling water pipe of the lower electrode 102 is embedded in the electrode,
The cooling water pipe 104 is exposed and fixed to the back side of the upper electrode 101.

[0005]

SUMMARY OF THE INVENTION Therefore, the conventional RIE
In the apparatus, each time the etching is performed, the reactant 105 adheres to the surface of the cooling water pipe 104 whose temperature is lower than that of the electrode.
4 may drop the reactant 105. Therefore, there is a problem that the semiconductor wafer 103 on the lower electrode 102 is contaminated and the reliability of the semiconductor element cannot be ensured. Further, the reactant 105 attached to the cooling water pipe 13 cannot be removed by dry cleaning,
We have to rely on wet cleaning using chemicals. However, since the inside of the reaction vessel 100 is narrow, wet cleaning must be performed with an unreasonable posture, and it takes a long time, and there is a problem that the work of removing the reactant is difficult. For this reason, appropriate protective treatment measures have conventionally been demanded.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to prevent semiconductors from adhering reactants to cooling water pipes, facilitate cleaning work, and improve the production yield. An object of the present invention is to provide a processing device.

[0007]

A semiconductor processing apparatus according to the present invention has a plurality of electrodes disposed therein, a processing chamber for processing a semiconductor wafer between the electrodes, and at least a part disposed on an outer peripheral surface of the electrodes. A cooling water pipe for cooling the electrodes,
A reactant adhesion preventing means for preventing the adhesion of the reactant to the cooling water pipe is provided. The reactant adhesion preventing means is specifically formed of, for example, a reactant adhesion preventing film formed of an insulating material and formed so as to cover at least the cooling water pipe.

In this semiconductor processing apparatus, the reactant is prevented from adhering to the cooling water pipe by the reactant adhesion preventing means.
Further, when the reactant adhesion preventing means is formed of a reactant adhesion film, the temperature on the back side of the cooling water pipe rises due to the presence of the reactant adhesion prevention film, and the cooling effect at that portion decreases. Therefore, the adhesion of the reactant having the property of being easily attached at a low temperature to the reactant adhesion preventing film itself is suppressed. On the other hand, the temperature decreases on the front side (electrode side) of the cooling water pipe, and the cooling effect increases.

[0009]

Embodiments of the present invention will be described below in detail with reference to FIG.

FIG. 1 shows a sectional configuration of a semiconductor processing apparatus, for example, an RIE apparatus according to an embodiment of the present invention. In this RIE apparatus, an upper electrode 11 and a lower electrode 12 are arranged above and below in a processing chamber (reaction vessel) 10 in parallel with each other. A semiconductor wafer 13 to be processed is placed on the lower electrode 12. The inside of the processing chamber 10 is evacuated to a vacuum and a reaction gas is introduced. In this RIE apparatus, the upper electrode 11 is set to the ground potential, and the lower electrode 12 is applied with a high-frequency voltage via a capacitor (not shown). As a result, a plasma is generated between the upper electrode 11 and the lower electrode 12, and at the same time, a DC negative potential is generated at the voltage application side electrode (lower electrode 12). Etching is performed. A cooling water pipe is embedded in the lower electrode 12, and the upper electrode 1
A cooling water pipe 14 is fixed to the back side of 1. The above configuration is substantially the same as the conventional RIE apparatus, and the present embodiment is different from the conventional RIE apparatus in the following points.

That is, the upper part of the cooling water pipe 14 fixed to the back side of the upper electrode 11 (that is, the area facing the processing chamber) is covered with the reactant adhesion film 15.

FIG. 2A is a top view as viewed from a cross section in the direction of arrows AA 'in FIG. 1 and shows an enlarged plan view of the upper electrode 11. FIG. 1B shows a side view of the upper electrode 11 corresponding to FIG. In the present embodiment, as shown by the hatched area in FIG.
The entire surface of the cooling water pipe 13 and the upper electrode 11 is covered with the reactant adhesion preventing film 15. The reactant adhesion preventing film 15 is formed by coating a material having excellent heat resistance and insulation properties, for example, a fluorine resin such as ethylene tetrafluoride resin (polytetrafluoroethylene). The coating is performed by spraying the suspension and then sintering it.

Therefore, in the RIE apparatus according to the present embodiment, the presence of the reactant adhesion preventing film 15 causes
The reaction product is prevented from directly adhering to the substrate. Further, due to the presence of the reactant adhesion preventing film 15, the temperature on the back side of the cooling water pipe 13 is relatively increased and the cooling effect is reduced as compared with the conventional structure. Therefore, the adhesion of the reactant having the property of being easily attached to the reactant adhesion preventing film 15 at a low temperature as described above is suppressed, and the yield of the etching process is improved. on the other hand,
The temperature on the front side of the cooling water pipe 13 (that is, the surface in contact with the upper electrode 11) is lower than in the conventional structure, and the cooling effect on the upper electrode 11 is increased.

Although the present invention has been described with reference to the embodiment, the present invention is not limited to the above embodiment, and can be variously modified within an equivalent range. For example, in the above embodiment, the reactant adhesion preventing film 15 is
Is formed on the entire rear surface of the cooling water pipe 13, but may be formed at least in a region covering the cooling water pipe 13. Further, in the above-described embodiment, the example in which the reactant adhesion preventing film 15 is formed of a fluororesin has been described, but another material may be used. Further, as a means for preventing the adhesion of the reactant, a similar effect can be obtained by, for example, covering the entire back surface of the upper electrode 11 on which the cooling water pipe 15 is disposed with a cover, in addition to the reactant adhesion prevention film 15. Can be. However, in consideration of maintainability, an increase in the weight of the entire electrode, and the like, a method of forming the reactant adhesion preventing film 15 is preferable.

In the above embodiment, the RIE apparatus is described as an example of the semiconductor processing apparatus. However, the present invention is also applicable to general apparatuses such as a plasma etching apparatus which has a cooling water pipe on the surface of an electrode and to which a reactant or the like easily adheres. You can do it.

[0016]

As described above, according to the semiconductor processing apparatus of the present invention, there is provided a reactant adhesion preventing means for preventing the adhesion of the reactant to the cooling water pipe provided on the surface of the electrode. As a result, the adhesion of reactants can be suppressed, the yield of products is improved, maintenance is easy, and wet cleaning work using conventional chemicals is not required, and safety is improved. This has the effect.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a configuration of an RIE apparatus according to an embodiment of the present invention.

2A and 2B show a configuration of an upper electrode. FIG. 2A is a top view seen from the direction of arrows AA ′ in FIG. 1, and FIG. 2B is a view corresponding to FIG. It is a side view of an upper electrode.

FIG. 3 is a cross-sectional view illustrating a configuration of a conventional RIE apparatus.

[Explanation of symbols]

Reference Signs List 10: processing chamber (reaction vessel), 11: upper electrode, 12: lower electrode, 13: cooling water pipe, 14: semiconductor wafer, 15
... Reactant adhesion prevention film

Claims (3)

[Claims] 1. A processing chamber in which a plurality of electrodes are disposed, a processing chamber for processing a semiconductor wafer between the electrodes, and a cooling water pipe for cooling the electrodes, at least a part of which is disposed on an outer peripheral surface of the electrodes. A semiconductor processing apparatus comprising: a reactant adhesion preventing means for preventing the reactant from adhering to the cooling water pipe. 2. The semiconductor processing apparatus according to claim 1, wherein said reactant adhesion preventing means is a reactant adhesion prevention film formed of an insulating material and formed so as to cover at least a cooling water pipe. apparatus. 3. The semiconductor processing apparatus according to claim 2, wherein said reactant adhesion preventing film is formed of fluororesin.