JPH1020236A - Illumination optical system and exposure device - Google Patents
Illumination optical system and exposure deviceInfo
- Publication number
- JPH1020236A JPH1020236A JP8179076A JP17907696A JPH1020236A JP H1020236 A JPH1020236 A JP H1020236A JP 8179076 A JP8179076 A JP 8179076A JP 17907696 A JP17907696 A JP 17907696A JP H1020236 A JPH1020236 A JP H1020236A
- Authority
- JP
- Japan
- Prior art keywords
- coherence
- mask
- optical system
- optical integrator
- light beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/095—Refractive optical elements
- G02B27/0955—Lenses
- G02B27/0961—Lens arrays
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は照明光学系に関し、
特に、IC、LSI等の半導体デバイス、CCD等の撮
像デバイス、磁気ヘッド等のデバイスを製造する露光装
置に好適に用いられる照明光学系に関するものである。The present invention relates to an illumination optical system,
In particular, the present invention relates to an illumination optical system suitably used for an exposure apparatus for manufacturing semiconductor devices such as ICs and LSIs, imaging devices such as CCDs, and devices such as magnetic heads.
【0002】[0002]
【従来の技術】従来より半導体素子をフォトリソグラフ
ィー技術を用いて製造する際に、フォトマスク(マス
ク)の転写パターンを投影光学系を介してフォトレジス
ト等が塗布されたウエハ又はガラスプレート等の基板
(以下、単に基板)上に露光転写する投影露光装置が使
用されている。近年、半導体素子の高集積化、微細化に
応じて投影光学系の解像度の向上が求められている。2. Description of the Related Art Conventionally, when a semiconductor element is manufactured by using photolithography technology, a transfer pattern of a photomask (mask) is coated with a photoresist or the like via a projection optical system, or a substrate such as a glass plate. 2. Description of the Related Art A projection exposure apparatus that performs exposure transfer on a substrate (hereinafter simply referred to as a substrate) is used. In recent years, there has been a demand for improvement in the resolution of a projection optical system in accordance with high integration and miniaturization of semiconductor elements.
【0003】この高解像度化に応えるために、エキシマ
レーザのようなパルスレーザが遠紫外領域の光源として
投影露光装置に使用されてきている。In order to respond to this high resolution, a pulse laser such as an excimer laser has been used in a projection exposure apparatus as a light source in the far ultraviolet region.
【0004】一方、エキシマレーザ等のコヒーレント光
源からの光束でマスクを照明する場合、干渉縞に起因し
た照度分布の不均一性が生じ、露光精度に悪影響を与え
るという問題が生じる。これを避けるため、従来はハエ
ノ目レンズ等のオプティカルインテグレータに入射する
光束の入射位置をずらし、干渉縞の位相を変えながら複
数パルスで露光を行い、干渉縞に起因した照度分布の不
均一性が露光精度に影響を与えないようしていた。On the other hand, when a mask is illuminated with a light beam from a coherent light source such as an excimer laser, there arises a problem that unevenness of illuminance distribution due to interference fringes occurs and adversely affects exposure accuracy. In order to avoid this, conventionally, the position of the light beam entering the optical integrator such as a fly-eye lens is shifted and the exposure is performed with multiple pulses while changing the phase of the interference fringes. The exposure accuracy was not affected.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、上述し
たような方法では、例えば振動ミラーによりオプティカ
ルインテグレータに入射する光束の入射位置をずらす場
合のように、光束の入射位置をずらすための部材を駆動
する手段が必要であり、複雑な装置構成となっていた。However, in the above-described method, a member for shifting the incident position of the light beam is driven, for example, when the incident position of the light beam incident on the optical integrator is shifted by a vibrating mirror. Means were required, and the configuration was complicated.
【0006】本発明は、上述した問題を解決し、物体を
均一に照明することのできる照明光学系を提供すること
を目的とする。An object of the present invention is to solve the above-mentioned problems and to provide an illumination optical system capable of uniformly illuminating an object.
【0007】[0007]
【課題を解決するための手段】上記目的を達成するた
め、本願第1発明の照明光学系は、コヒーレンスの異方
性を有する光束が入射するオプティカルインテグレータ
を有し、このオプティカルインテグレータにより形成さ
れた2次光源からの光束によって物体を照明する照明光
学系であって、各2次光源同士の間隔は、オプティカル
インテグレータに入射する光束のコヒーレンスの高い第
1の方向の間隔の方が、第1の方向に比してコヒーレン
スの低い第2の方向の間隔よりも大きいことを特徴とし
ている。In order to achieve the above object, an illumination optical system according to a first aspect of the present invention has an optical integrator on which a light beam having coherence anisotropy is incident, and is formed by the optical integrator. An illumination optical system for illuminating an object with a light beam from a secondary light source, wherein an interval between the respective secondary light sources is a first direction in which a coherence of a light beam incident on the optical integrator is higher in a first direction. It is characterized in that it is larger than the interval in the second direction having a lower coherence than the direction.
【0008】本願第2発明の照明光学系は、コヒーレン
スの異方性を有する光束が入射するオプティカルインテ
グレータを有し、このオプティカルインテグレータによ
り形成された2次光源からの光束によって物体を照明す
る照明光学系であって、オプティカルインテグレータは
複数の素子レンズを有し、この素子レンズの開口は、オ
プティカルインテグレータに入射する光束のコヒーレン
スの高い第1の方向の寸法の方が、第1の方向に比して
コヒーレンスの低い第2の方向の寸法よりも大きいこと
を特徴としている。The illumination optical system according to the second aspect of the present invention has an optical integrator on which a light beam having coherence anisotropy enters, and an illumination optical system for illuminating an object with a light beam from a secondary light source formed by the optical integrator. The optical integrator has a plurality of element lenses, and the aperture of the element lens has a dimension in the first direction where the coherence of the light beam incident on the optical integrator is higher than that in the first direction. And is larger than the dimension in the second direction having low coherence.
【0009】本願第1、第2発明の照明光学系を露光装
置に適用することにより、IC、LSI等の半導体デバ
イス、CCD等の撮像デバイス、磁気ヘッド等のデバイ
スを正確に製造することができる。By applying the illumination optical system of the first and second aspects of the present invention to an exposure apparatus, semiconductor devices such as ICs and LSIs, imaging devices such as CCDs, and devices such as magnetic heads can be manufactured accurately. .
【0010】[0010]
【発明の実施の形態】図1は、本発明の照明光学系を有
する投影露光装置の要部概略図である。FIG. 1 is a schematic view of a main part of a projection exposure apparatus having an illumination optical system according to the present invention.
【0011】エキシマレーザ等の光源1を出射したコヒ
ーレンスの異方性を有する光束は、ビーム整形光学系2
で所望の光束形状に変形され、オプティカルインテグレ
ータであるハエノ目レンズ3、コンデンサーレンズ4に
入射する。コンデンサーレンズ4を通過した光束は、絞
り5により所望の照明領域形状となり、光学系6、マス
ク7、投影光学系8を介して感光性の材料が塗布された
基板9を照射する。これによりマスク7に形成されたパ
ターンが、基板9に露光転写される。なお、絞り5、マ
スク7、基板9は光学的に共役な位置に配置されてい
る。A light beam having anisotropy of coherence emitted from a light source 1 such as an excimer laser is transmitted to a beam shaping optical system 2.
Then, the light beam is transformed into a desired light beam shape, and enters a fly-eye lens 3 and a condenser lens 4 which are optical integrators. The light beam that has passed through the condenser lens 4 has a desired illumination area shape by the stop 5, and irradiates the substrate 9 coated with a photosensitive material via the optical system 6, the mask 7, and the projection optical system 8. Thus, the pattern formed on the mask 7 is exposed and transferred to the substrate 9. The stop 5, the mask 7, and the substrate 9 are arranged at optically conjugate positions.
【0012】ハエノ目レンズ3を光源1側から見た図を
図2に示す。FIG. 2 shows the fly-eye lens 3 as viewed from the light source 1 side.
【0013】ハエノ目レンズ3を構成する素子レンズ
は、図2に示すように、入射光束のコヒーレンスの高い
方向と平行な辺が、それと直交するコヒーレンスの低い
方向の辺よりも長い長方形の開口をしている。これらの
辺の長さは、光束のコヒーレンスにより決定されるもの
で、シミュレーションや実測などにより求められた最も
均一な照度分布が得られる形状に決定されている。As shown in FIG. 2, the element lens constituting the fly-eye lens 3 has a rectangular opening in which the side parallel to the direction of high coherence of the incident light beam is longer than the side perpendicular to the direction of low coherence. doing. The lengths of these sides are determined by the coherence of the luminous flux, and are determined to have the most uniform illuminance distribution obtained by simulation, actual measurement, or the like.
【0014】本実施形態におけるビーム整形光学系2か
らマスク7までの詳細図を図3、図4に示す。図3は入
射光束のコヒーレンスの高い方向と平行な面での断面図
であり、図4はコヒーレンスの低い方向と平行な面での
断面図である。FIGS. 3 and 4 show detailed views from the beam shaping optical system 2 to the mask 7 in this embodiment. FIG. 3 is a cross-sectional view of a plane parallel to the direction of high coherence of the incident light beam, and FIG. 4 is a cross-sectional view of a plane parallel to the low coherence direction.
【0015】前述したようにハエノ目レンズ3の素子レ
ンズの開口の寸法比が、コヒーレンスの高い方向と低い
方向によって異なるので、図3、4に示すように各素子
レンズより出射する光束の出射角が、コヒーレンスの高
い方向と低い方向によって異なる。したがって、コンデ
ンサーレンズ4を経て絞り5面上に到達する光束の照明
領域は異なるが、絞り5によって規定される所定の形状
の照明領域でマスク7を照明することができる。As described above, the dimensional ratio of the apertures of the element lenses of the fly-eye lens 3 differs depending on the direction in which the coherence is high and the direction in which the coherence is low. Therefore, as shown in FIGS. Depends on the direction of high and low coherence. Therefore, the mask 7 can be illuminated with an illumination area of a predetermined shape defined by the aperture 5 although the illumination area of the light beam that reaches the surface of the aperture 5 via the condenser lens 4 is different.
【0016】ハエノ目レンズの他の例を図5に示す。こ
の例のように、素子レンズの開口は、入射光束のコヒー
レンスの高い方向に長軸を、コヒーレンスの低い方向に
短軸を有する楕円形状でもよい。また、図2、図5以外
の形状でも、コヒーレンスの低い方向よりもコヒーレン
スの高い方向が長い開口形状であれば、本発明の効果は
期待できる。Another example of a fly-eye lens is shown in FIG. As in this example, the aperture of the element lens may have an elliptical shape having a major axis in the direction of higher coherence of the incident light beam and a minor axis in the direction of lower coherence. 2 and 5, the effects of the present invention can be expected as long as the opening shape has a longer coherence direction than a low coherence direction.
【0017】このように本発明は、コヒーレンスの高い
方向のハエノ目レンズの開口寸法を低い方向に比して長
くすることにより、コヒーレンスの高い方向の空間的コ
ヒーレンシィを低下させ、マスク7を均一に照明するこ
とができる。As described above, according to the present invention, by increasing the opening size of the fly-eye lens in the direction of high coherence as compared with the direction of low coherence, the spatial coherency in the direction of high coherence is reduced and the mask 7 is made uniform. Can be illuminated.
【0018】図6は、本発明の他の実施形態を示した図
であり、走査型露光装置の要部概略図である。FIG. 6 is a view showing another embodiment of the present invention, and is a schematic view of a main part of a scanning type exposure apparatus.
【0019】先の実施例との違いは、マスク及び基板を
同期走査させるためのマスク走査手段10、基板走査手
段11を有していることである。また、ハエノ目レンズ
3の素子レンズの入射側開口はマスク7と共役に配置さ
れている。The difference from the previous embodiment is that a mask scanning unit 10 and a substrate scanning unit 11 for synchronously scanning a mask and a substrate are provided. The entrance opening of the element lens of the fly-eye lens 3 is arranged conjugate with the mask 7.
【0020】本実施形態におけるビーム整形光学系2か
らマスク7までの詳細図を図7、図8に示す。図7は入
射光束のコヒーレンスの高い方向と平行な面での断面図
であり、図8はコヒーレンスの低い方向と平行な面での
断面図である。FIGS. 7 and 8 show detailed views from the beam shaping optical system 2 to the mask 7 in this embodiment. FIG. 7 is a cross-sectional view of a plane parallel to the direction of higher coherence of the incident light beam, and FIG. 8 is a cross-sectional view of a plane parallel to the lower direction of coherence.
【0021】本実施形態では、ハエノ目レンズ3を構成
する素子レンズの入射側開口がマスク7と共役、したが
って絞り5とも共役な位置に配置されているので、絞り
5面上に投影される光束の形状は、素子レンズの入射側
開口形状と相似の形状となる。In the present embodiment, since the entrance opening of the element lens constituting the fly-eye lens 3 is conjugate with the mask 7, and thus conjugate with the stop 5, the luminous flux projected on the surface of the stop 5 Has a shape similar to the shape of the entrance opening of the element lens.
【0022】一般に走査型露光装置では、走査方向が非
走査方向よりも短い長方形の照明領域を形成し、マスク
7、基板9を同期走査して、照明領域よりも広い露光領
域に対して露光を行う。本実施形態においても、素子レ
ンズの開口は先の実施形態と同様に様々な形状が採用さ
れうるが、図2に示したように、素子レンズの開口形状
が長方形である場合には、絞り5面上の光束の形状が前
述したように素子レンズの開口と相似な長方形であるの
で、その短辺方向をマスク7、基板9の走査方向とする
よう構成すれば、絞り5で照明領域を形成するために遮
光する光束が少なくてすみ光利用効率がよい。In general, in a scanning type exposure apparatus, a rectangular illumination area whose scanning direction is shorter than the non-scanning direction is formed, and the mask 7 and the substrate 9 are synchronously scanned to expose an exposure area wider than the illumination area. Do. Also in this embodiment, various shapes can be adopted for the aperture of the element lens as in the previous embodiment. However, when the aperture shape of the element lens is rectangular as shown in FIG. Since the shape of the light beam on the surface is a rectangle similar to the aperture of the element lens as described above, if the short side direction is configured to be the scanning direction of the mask 7 and the substrate 9, an illumination area is formed by the stop 5. Therefore, the amount of light to be shielded is small and the light utilization efficiency is high.
【0023】次に、本発明の露光装置を利用した半導体
素子の製造方法について説明する。Next, a method of manufacturing a semiconductor device using the exposure apparatus of the present invention will be described.
【0024】図9は半導体素子(ICやLSI等の半導
体チップ、液晶パネルやCCD)の製造フローを示す。
ステップ1(回路設計)では半導体素子の回路設計を行
う。ステップ2(マスク製作)では設計した回路パター
ンを形成したマスク(マスク7)を製作する。一方、ス
テップ3(ウエハ製造)ではシリコン等の材料を用いて
ウエハ(基板9)を製造する。ステップ4(ウエハプロ
セス)は前工程と呼ばれ、上記用意したマスクとウエハ
とを用いて、リソグラフィー技術によってウエハ上に実
際の回路を形成する。次のステップ5(組み立て)は後
工程と呼ばれ、ステップ4によって作成されたウエハを
用いてチップ化する工程であり、アッセンブリ工程(ダ
イシング、ボンディング)、パッケージング工程(チッ
プ封入)等の工程を含む。ステップ6(検査)ではステ
ップ5で作成された半導体素子の動作確認テスト、耐久
性テスト等の検査を行う。こうした工程を経て半導体素
子が完成し、これが出荷(ステップ7)される。FIG. 9 shows a flow of manufacturing semiconductor devices (semiconductor chips such as ICs and LSIs, liquid crystal panels and CCDs).
In step 1 (circuit design), the circuit of the semiconductor element is designed. Step 2 is a process for making a mask on the basis of the circuit pattern design. On the other hand, in step 3 (wafer manufacturing), a wafer (substrate 9) is manufactured using a material such as silicon. Step 4 (wafer process) is referred to as a preprocess, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step 5 (assembly) is called a post-process, and is a process of forming chips using the wafer created in step 4, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). Including. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor element created in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).
【0025】図10は上記ウエハプロセスの詳細なフロ
ーを示す。ステップ11(酸化)ではウエハ(基板9)
の表面を酸化させる。ステップ12(CVD)ではウエ
ハの表面に絶縁膜を形成する。ステップ13(電極形
成)ではウエハ上に電極を蒸着によって形成する。ステ
ップ14(イオン打込み)ではウエハにイオンを打ち込
む。ステップ15(レジスト処理)ではウエハにレジス
ト(感材)を塗布する。ステップ16(露光)では上記
露光装置によってマスク(マスク7)の回路パターンの
像でウエハを露光する。ステップ17(現像)では露光
したウエハを現像する。ステップ18(エッチング)で
は現像したレジスト以外の部分を削り取る。ステップ1
9(レジスト剥離)ではエッチングが済んで不要となっ
たレジストを取り除く。これらステップを繰り返し行う
ことによりウエハ上に回路パターンが形成される。FIG. 10 shows a detailed flow of the wafer process. In step 11 (oxidation), the wafer (substrate 9)
Oxidizes the surface of the Step 12 (CVD) forms an insulating film on the surface of the wafer. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist processing), a resist (sensitive material) is applied to the wafer. Step 16 (exposure) uses the exposure apparatus to expose a wafer using the circuit pattern image of the mask (mask 7). Step 17 (development) develops the exposed wafer. In step 18 (etching), portions other than the developed resist are removed. Step 1
In step 9 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, a circuit pattern is formed on the wafer.
【0026】このような製造方法を用いれば、従来は難
しかった高集積度の半導体素子を製造することが可能に
なる。By using such a manufacturing method, it becomes possible to manufacture a highly integrated semiconductor device which has been difficult in the past.
【0027】[0027]
【発明の効果】以上説明したように、本発明によれば、
物体を均一に照明することができる。As described above, according to the present invention,
The object can be illuminated uniformly.
【図1】本発明の照明光学系を有する投影露光装置の要
部概略図である。FIG. 1 is a schematic view of a main part of a projection exposure apparatus having an illumination optical system according to the present invention.
【図2】ハエノ目レンズを光源側から見た図である。FIG. 2 is a view of a fly-eye lens as viewed from a light source side.
【図3】図1の投影露光装置において、ビーム整形光学
系からマスクまでのコヒーレンスの高い方向と平行な面
での断面詳細図である。3 is a detailed sectional view of a plane parallel to a direction in which coherence is high from a beam shaping optical system to a mask in the projection exposure apparatus of FIG.
【図4】図1の投影露光装置において、ビーム整形光学
系からマスクまでのコヒーレンスの低い方向と平行な面
での断面詳細図である。4 is a detailed sectional view of a plane parallel to a direction in which coherence is low from a beam shaping optical system to a mask in the projection exposure apparatus of FIG.
【図5】他の例のハエノ目レンズを光源側から見た図で
ある。FIG. 5 is a diagram of another example of a fly-eye lens viewed from a light source side.
【図6】本発明の照明光学系を有する走査型露光装置の
要部概略図である。FIG. 6 is a schematic view of a main part of a scanning exposure apparatus having an illumination optical system according to the present invention.
【図7】図6の走査型露光装置において、ビーム整形光
学系からマスクまでのコヒーレンスの高い方向と平行な
面での断面詳細図である。FIG. 7 is a detailed sectional view of a plane parallel to a direction in which coherence is high from a beam shaping optical system to a mask in the scanning exposure apparatus of FIG. 6;
【図8】図6の走査型露光装置において、ビーム整形光
学系からマスクまでのコヒーレンスの低い方向と平行な
面での断面詳細図である。8 is a detailed sectional view of a plane parallel to a low coherence direction from the beam shaping optical system to the mask in the scanning exposure apparatus of FIG.
【図9】半導体素子の製造工程を示す図である。FIG. 9 is a view showing a manufacturing process of the semiconductor element.
【図10】図9の工程中のウエハプロセスの詳細を示す
図である。FIG. 10 is a diagram showing details of a wafer process during the step of FIG. 9;
1 光源 2 ビーム整形光学系 3 ハエノ目レンズ 4 コンデンサーレンズ 5 絞り 6 光学系 7 マスク 8 投影光学系 9 基板 10 マスク走査手段 11 基板走査手段 DESCRIPTION OF SYMBOLS 1 Light source 2 Beam shaping optical system 3 Fly-eye lens 4 Condenser lens 5 Aperture 6 Optical system 7 Mask 8 Projection optical system 9 Substrate 10 Mask scanning means 11 Substrate scanning means
Claims (9)
射するオプティカルインテグレータを有し、該オプティ
カルインテグレータにより複数の2次光源を形成し、該
複数の2次光源からの光束によって物体を照明する照明
光学系において、 各2次光源同士の間隔は、前記オプティカルインテグレ
ータに入射する光束のコヒーレンスの高い第1の方向の
間隔の方が、該第1の方向に比してコヒーレンスの低い
第2の方向の間隔よりも大きいことを特徴とする照明光
学系。1. An illumination device comprising: an optical integrator on which a light beam having coherence anisotropy is incident; a plurality of secondary light sources formed by the optical integrator; and an object for illuminating an object with light beams from the plurality of secondary light sources. In the optical system, the interval between the secondary light sources is such that the interval of the light beam incident on the optical integrator in the first direction where the coherence is high is lower in the second direction where the coherence is lower than the first direction. An illumination optical system characterized in that the distance is larger than the distance of the illumination optical system.
する光源と、該光源によって供給された光束が入射する
オプティカルインテグレータとを有し、該オプティカル
インテグレータによって形成された複数の2次光源から
の光束を用いてマスクを照明し、該マスクのパターンを
基板に露光転写する露光装置において、 各2次光源同士の間隔は、前記オプティカルインテグレ
ータに入射する光束のコヒーレンスの高い第1の方向の
間隔の方が、該第1の方向に比してコヒーレンスの低い
第2の方向の間隔よりも大きいことを特徴とする露光装
置。2. A light source for supplying light having anisotropy of coherence, and an optical integrator on which a light beam supplied by the light source is incident, wherein a plurality of secondary light sources formed by the optical integrator are provided. In an exposure apparatus that illuminates a mask using a light beam and exposes and transfers a pattern of the mask onto a substrate, an interval between each of the secondary light sources is set to a distance in a first direction in which a light beam incident on the optical integrator has a high coherence. The exposure apparatus is characterized in that the distance is larger than the distance in the second direction, which has lower coherence than the first direction.
査する手段を有し、前記マスクと基板の走査方向は、前
記第2の方向と等しいことを特徴とする請求項2記載の
露光装置。3. The exposure apparatus according to claim 2, further comprising: means for scanning the mask and the substrate while synchronizing the same, wherein a scanning direction of the mask and the substrate is equal to the second direction.
特徴とする請求項2、3記載の露光装置。4. An exposure apparatus according to claim 2, wherein said light source is an excimer laser.
射するオプティカルインテグレータを有し、該オプティ
カルインテグレータにより複数の2次光源を形成し、該
複数の2次光源からの光束によって物体を照明する照明
光学系において、 前記オプティカルインテグレータは複数の素子レンズを
有し、該素子レンズの開口は、前記オプティカルインテ
グレータに入射する光束のコヒーレンスの高い第1の方
向の寸法の方が、該第1の方向に比してコヒーレンスの
低い第2の方向の寸法よりも大きいことを特徴とする照
明光学系。5. An illumination for providing an optical integrator on which a light beam having coherence anisotropy is incident, forming a plurality of secondary light sources by the optical integrator, and illuminating an object with light beams from the plurality of secondary light sources. In the optical system, the optical integrator has a plurality of element lenses, and an opening of the element lens has a dimension in a first direction in which a coherence of a light beam incident on the optical integrator is higher in the first direction. An illumination optical system, wherein the dimension is larger than a dimension in a second direction having a lower coherence.
する光源と、該光源によって供給された光束が入射する
オプティカルインテグレータとを有し、該オプティカル
インテグレータによって形成された複数の2次光源から
の光束を用いてマスクを照明し、該マスクのパターンを
基板に露光転写する露光装置において、 前記オプティカルインテグレータは複数の素子レンズを
有し、該素子レンズの開口は、前記オプティカルインテ
グレータに入射する光束のコヒーレンスの高い第1の方
向の寸法の方が、該第1の方向に比してコヒーレンスの
低い第2の方向の寸法よりも大きいことを特徴とする露
光装置。6. A light source for supplying light having anisotropy of coherence, and an optical integrator on which a light beam supplied by the light source is incident, wherein a plurality of secondary light sources formed by the optical integrator are provided. In an exposure apparatus that illuminates a mask using a light beam and exposes and transfers a pattern of the mask onto a substrate, the optical integrator has a plurality of element lenses, and an opening of the element lens is provided for a light beam incident on the optical integrator. An exposure apparatus, wherein a dimension in a first direction having a high coherence is larger than a dimension in a second direction having a low coherence as compared with the first direction.
査する手段を有し、前記マスクと基板の走査方向は、前
記第2の方向と等しいことを特徴とする請求項6記載の
露光装置。7. The exposure apparatus according to claim 6, further comprising: means for scanning while synchronizing the mask and the substrate, wherein a scanning direction of the mask and the substrate is equal to the second direction.
特徴とする請求項6、7記載の露光装置。8. An exposure apparatus according to claim 6, wherein said light source is an excimer laser.
載の露光装置を用いてデバイスを製造することを特徴と
するデバイス製造方法。9. A device manufacturing method, comprising manufacturing a device using the exposure apparatus according to claim 2. Description:
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17907696A JP3796294B2 (en) | 1996-07-09 | 1996-07-09 | Illumination optical system and exposure apparatus |
US08/885,814 US5946138A (en) | 1996-07-09 | 1997-06-30 | Illumination optical system, exposure device and device manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17907696A JP3796294B2 (en) | 1996-07-09 | 1996-07-09 | Illumination optical system and exposure apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH1020236A true JPH1020236A (en) | 1998-01-23 |
JP3796294B2 JP3796294B2 (en) | 2006-07-12 |
Family
ID=16059674
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17907696A Expired - Fee Related JP3796294B2 (en) | 1996-07-09 | 1996-07-09 | Illumination optical system and exposure apparatus |
Country Status (2)
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---|---|
US (1) | US5946138A (en) |
JP (1) | JP3796294B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2004109777A1 (en) * | 2003-06-03 | 2004-12-16 | Nikon Corporation | Exposure method and device, device manufacturing method, and device |
JP2014123600A (en) * | 2012-12-20 | 2014-07-03 | Nikon Corp | Optical integrator, illumination unit, transmission optical system, illumination optical system, exposure device, and device manufacturing method |
JP2014127485A (en) * | 2012-12-25 | 2014-07-07 | Nikon Corp | Optical integrator, illumination unit, transmission optical system, illumination optical system, exposure device, and method of manufacturing device |
Families Citing this family (8)
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JP3697036B2 (en) * | 1997-10-03 | 2005-09-21 | キヤノン株式会社 | Exposure apparatus and semiconductor manufacturing method using the same |
DE19915000C2 (en) * | 1999-04-01 | 2002-05-08 | Microlas Lasersystem Gmbh | Device and method for controlling the intensity distribution of a laser beam |
JP2002006225A (en) * | 2000-06-23 | 2002-01-09 | Nikon Corp | Illuminator for microscope |
US7210820B2 (en) * | 2003-05-07 | 2007-05-01 | Resonetics, Inc. | Methods and apparatuses for homogenizing light |
US20040248043A1 (en) * | 2003-06-03 | 2004-12-09 | Nikon Corporation | Exposure method, exposure apparatus and device manufacturing method |
JP2011164151A (en) * | 2010-02-04 | 2011-08-25 | Sony Corp | Illumination device and projection type image display device |
CN101938668B (en) * | 2010-09-10 | 2013-01-23 | 中国科学院自动化研究所 | Method for three-dimensional reconstruction of multilevel lens multi-view scene |
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Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4769750A (en) * | 1985-10-18 | 1988-09-06 | Nippon Kogaku K. K. | Illumination optical system |
US5253110A (en) * | 1988-12-22 | 1993-10-12 | Nikon Corporation | Illumination optical arrangement |
US5153773A (en) * | 1989-06-08 | 1992-10-06 | Canon Kabushiki Kaisha | Illumination device including amplitude-division and beam movements |
JP3102076B2 (en) * | 1991-08-09 | 2000-10-23 | キヤノン株式会社 | Illumination device and projection exposure apparatus using the same |
JP3316936B2 (en) * | 1992-10-22 | 2002-08-19 | 株式会社ニコン | Illumination optical device, exposure device, and transfer method using the exposure device |
JP2715895B2 (en) * | 1994-01-31 | 1998-02-18 | 日本電気株式会社 | Light intensity distribution simulation method |
JP3368653B2 (en) * | 1994-03-11 | 2003-01-20 | 株式会社ニコン | Illumination method and apparatus, and exposure method and apparatus |
JP3633002B2 (en) * | 1994-05-09 | 2005-03-30 | 株式会社ニコン | Illumination optical apparatus, exposure apparatus, and exposure method |
-
1996
- 1996-07-09 JP JP17907696A patent/JP3796294B2/en not_active Expired - Fee Related
-
1997
- 1997-06-30 US US08/885,814 patent/US5946138A/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004109777A1 (en) * | 2003-06-03 | 2004-12-16 | Nikon Corporation | Exposure method and device, device manufacturing method, and device |
JP2014123600A (en) * | 2012-12-20 | 2014-07-03 | Nikon Corp | Optical integrator, illumination unit, transmission optical system, illumination optical system, exposure device, and device manufacturing method |
JP2014127485A (en) * | 2012-12-25 | 2014-07-07 | Nikon Corp | Optical integrator, illumination unit, transmission optical system, illumination optical system, exposure device, and method of manufacturing device |
Also Published As
Publication number | Publication date |
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JP3796294B2 (en) | 2006-07-12 |
US5946138A (en) | 1999-08-31 |
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