JPH10194830A - Dielectric porcelain field at low temperature and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain high density dielectric porcelain fired at a low temp. and having high Qu in a microwave domain and a low absolute value of πt by calcining and pulverizing a starting material prepd. by adding Y2 O3 to a specified compsn., adding glass powder to the resultant calcined powder, compacting and firing them. SOLUTION: Starting material prepd. by adding 0.5-15 pts.wt. Y2 O3 to 100 pts.wt. compsn. represented by the formula xBaO∼yNd2 O3 .zTiO2 (where x+y+ z=100mol%, 8.5<=x<=20, 5<=y<=23 and 62<=z<=85) is calcined at 900-1,200 deg.C and pulverized to form calcined powder. A mixture of 99-85wt.% of the calcined powder with 1-15wt.% glass powder having <=450 deg.C transition temp. is compacted and fired at 850-1,000 deg.C to obtain the objective dielectric porcelain having <=1% rate of water absorption, 1,200-1,700GHz product of no-load Q and frequency at which the no-load Q is measured and +20 to -20ppm/ deg.C temp. coefft. of resonance frequency.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION The present invention has a small dielectric loss in a microwave region and can be sintered at a relatively low temperature. The present invention relates to a low-temperature fired dielectric porcelain that can be fired simultaneously with a conductor material and a method for manufacturing the same. The dielectric ceramic of the present invention is used as components such as a laminated microwave resonator and a filter.

[0002]

2. Description of the Related Art As the amount of communication information increases, automobile telephones,
Various communication systems using a microwave region such as satellite communication and satellite broadcasting are rapidly developing. Accordingly, many microwave dielectric porcelains have been developed. The characteristics required for the dielectric porcelain used in such a microwave region include a large relative dielectric constant (ε _r ), a large unloaded Q value (Qu) (a small dielectric loss), The absolute value of the temperature coefficient (τ _f ) of the resonance frequency is small.

At present, various types of dielectric porcelain having the above characteristics have been developed, but porcelains having a large Qu include Ba (Mg _1/3 Ta _2/3 ) O ₃ and Ba (Zn
_1/3 Ta _2/3 ) O _{3 and the} like are known. As the large porcelain _{ε r, BaO-TiO 2 -RE} 2 O 3 system (where, RE is a rare earth element.) And the like are known, respectively with the cavity, which is utilized to filter.
Further, recently, a laminated dielectric resonator or a filter using a conductor as an internal electrode has been developed, but in order to obtain sufficient performance in a high frequency region such as a microwave, a high conductivity is required. It is necessary to fire the conductor material and the dielectric material simultaneously.

[0004]

However, in the conventional dielectric porcelain, the firing temperature is as high as 1300.degree.
g, Cu etc. are high in conductivity and inexpensive.
Simultaneous firing with a conductor material having lower heat resistance than t, Pd, etc. was difficult. Therefore, it has not been possible to manufacture a small-sized laminated resonator or filter used in the microwave region using Ag, Cu, or the like as a conductor material. In addition, in order to realize low-temperature firing of ceramics, generally, a method of adding glass frit as a sintering aid, a method of reducing the raw material powder to submicron or less,
Alternatively, there is a method using a chemical process such as a sol-gel method. However, ordinary dielectric raw materials have low reactivity with glass components, and it is difficult to obtain ceramics having high density even if glass components are added, and furthermore, there is a problem that dielectric loss is significantly increased. .

The present invention solves the above-mentioned problems, and can be fired at a low temperature of 1000 ° C. or lower, particularly about 900 ° C., and thus has a slightly lower heat resistance such as Ag and Cu described above. conductivity can be calcined highly conductive material simultaneously with a high denseness, and the Q _u in the microwave region is large, to provide an absolute value is less low-temperature sintered dielectric ceramic and a production method thereof tau _f With the goal.

[0006]

SUMMARY OF THE INVENTION The present invention relates to a BaO-Nd
It is a sintered body obtained by adding a small amount of glass powder having a specific transition point to a dielectric material composed of a ₂ O ₃ —TiO ₂ composition and a specific amount of Y ₂ O ₃ and firing the dielectric material. And In the present invention, the synergistic effect of combining a dielectric material having a specific composition and a specific glass component as described above enables firing at a low temperature, and a densified sintered body is obtained. Deterioration of characteristics is minimized.

[0007] In the present invention, by reacting positively with a dielectric material and a glass component can be a small amount of addition of the glass component, decrease in Q _u of the obtained dielectric ceramic is more It is suppressed and sintering is promoted. Furthermore, in the present invention, in particular, by using a dielectric material having relatively high reactivity with a glass component, and by making the composition of the glass component highly reactive with the dielectric material,
The synergistic effect of using a dielectric material having a specific composition in combination with a glass component is further enhanced, thereby achieving excellent dielectric properties and densification at low temperature firing.

The low-temperature fired dielectric porcelain of the first invention has a composition formula of xBaO.yNd ₂ O ₃ .zTiO ₂ [where x, y
And the unit of z is mol%, and 8.5 ≦ x ≦ 20, 5 ≦
y ≦ 23, 62 ≦ z ≦ 85, and x + y + z =
100. Relative to 100 parts by weight of the composition represented by], the dielectric material 99 to 80% by weight formed by containing the Y ₂ O ₃ of 0.5 to 15 parts by weight, the transition point of glass 1 of 450 ° C. or less -20% by weight.

Further, a low-temperature fired dielectric porcelain of the second invention is characterized in that:
Composition formula _{xBaO · yNd 2 O 3 · zTiO} 2 · wY 2
O ₃ [where the units of x, y, z and w are mol%,
7.8 ≦ x ≦ 20, 4.7 ≦ y ≦ 23, 56.4 ≦ z ≦
85, 0 <w ≦ 9.1, and x + y + z + w =
100. ] And 99 to 80% by weight of a dielectric material represented by the following formula, and 1 to 20% by weight of glass having a transition point of 450 ° C. or lower.

Further, according to a fifth aspect of the present invention, there is provided a method of manufacturing a low-temperature fired dielectric ceramic, wherein the composition formula is xBaO.yNd ₂ O ₃ .zTiO.
₂ [where the units of x, y and z are mol%, and 8.5
≦ x ≦ 20, 5 ≦ y ≦ 23, 62 ≦ z ≦ 85,
And x + y + z = 100. ] The composition 1 represented by
After mixing the raw materials so as to have a composition containing 0.5 to 15 parts by weight of Y ₂ O ₃ with respect to 00 parts by weight, 900 parts by weight were added.
Calcined at ~ 1200 ° C to produce a calcined material, and then the calcined material is pulverized to obtain a calcined powder of 99 to 85% by weight;
After mixing with 1 to 15% by weight of glass powder having a transition point of 450 ° C. or less, the mixture is molded, and then fired at 850 to 1000 ° C.

Wherein x is less than 8.5 mol% in the first invention;
In the second invention, when it is less than 7.8 mol%, ε _r decreases,
If x in the first and second invention is more than 20 mol% significantly reduced Q _u, τ _f is shifted to the positive side. When y is less than 5 mol% in the first invention and less than 4.7 mol% in the second invention, τ _f is largely shifted to the positive side, and y is 23 mol% in the first and second inventions. If it exceeds, _Qu decreases. Further, when z is less than 62 mol% in the first invention and less than 56.4 mol% in the second invention, ε
_r and _Qu decrease and τ _f shifts to the positive side. First
And when z exceeds 85 mol% in the second invention, τ
_f shifts greatly to the positive side. In addition, with an increase in the content of Y ₂ O ₃ , without significantly reducing ε _r ,
τ _f can be stabilized. In the first invention, if the content of Y ₂ O ₃ is less than 0.5% by weight,
In the present invention, when w is 0, τ _f shifts to the positive side. On the other hand, in the first invention, if the Y ₂ O ₃ exceeds 15 wt%, or in the second invention, if w exceeds 9.1 mol%, sintering becomes unstable, Q _u is lowered, tau _f shifts greatly to the negative side.

The above "glass" is contained in order to obtain a dense sintered body at a low temperature firing. Only when the "transition point" of the glass is "450 ° C. or less", densification is achieved by the addition of a small amount of the "glass powder", without causing a large decrease in Q _u, excellent dielectric properties Dielectric porcelain can be obtained. The transition point of this glass is preferably in the range of 350 to 450C, particularly preferably 390 to 450C. When the glass transition point exceeds 450 ° C,
In particular, when the content is relatively small, a sufficiently dense sintered body cannot be obtained.

On the other hand, when a large amount of glass powder is added, ε _r and _Qu are greatly reduced, and there are cases where these dielectric properties cannot be measured. If the amount of the glass powder added is less than 1% by weight, densification in low-temperature firing becomes difficult even if glass having a transition point of 450 ° C. or lower is used, and the dielectric properties are reduced to an unmeasurable level. On the other hand, when the addition amount is 20
If the content exceeds% by weight, densification can be achieved, but the decrease in Qu is remarkable, and measurement of dielectric properties in a microwave region cannot be performed.

Further, as described in the sixth invention, the above glass contains "20 to 60 mol%", particularly 25 to
Those containing 45 mol%, more preferably 30 to 40 mol% of "PbO" are preferred. When such a glass powder is used, sintering at a low temperature is further promoted. This is because in a glass containing a specific amount of PbO, a specific reaction between the dielectric material having a specific composition used in the present invention and the glass powder is promoted, and the sinterability is improved. It is inferred. If the PbO content is less than 20 mol%, the effect of promoting sintering is small, and if it exceeds 60 mol%, the Qu of the obtained dielectric ceramic decreases.

Further, this glass is, as in the seventh invention,
In addition to PbO, it is preferable to contain “0.1 to 5 mol%”, particularly 0.5 to 4 mol%, and more preferably 1 to 3 mol% of an oxide of an “alkali metal element”. The connection is further improved. When the content of the oxide of the alkali metal element is less than 0.1 mol%, the effect of promoting sintering is small,
If it exceeds 5 mol%, Qu decreases.

Alkali metal elements are not preferable because they generally increase the conduction loss and increase the dielectric loss of the dielectric ceramic. However, a dielectric ceramic having a specific composition of the present invention, the addition of glass powder containing a small amount of alkali metal element, without significantly reducing the Q _u, can be remarkably improved sinterability. As a result, in the present invention may be a small amount of addition of the glass powder, it lowers the Q _u is suppressed by. In the present invention,
As in the eighth invention, the "average particle size" of the "calcined powder" and the glass powder also greatly affects the compactness of the sintered body. In particular, the calcined powder is more remarkably improved in sinterability as it is finer. If the average particle diameter of the calcined powder and the glass powder exceeds 1.5 μm, the densification of the dielectric ceramic becomes insufficient, which is not preferable. It is thought that there is a close correlation between the average particle size of the calcined powder and the glass powder and the reactivity of the dielectric material composed of the calcined powder and the glass powder, but the details are not clear.

If the temperature of the above-mentioned "calcination" is less than 900 ° C., the Qu of the obtained dielectric porcelain becomes small,
When the temperature exceeds 0 ° C., τ _f increases to the positive side and deviates from a practical range. The temperature of this calcination is 1000-1150 ° C
Is particularly preferable. In this temperature range, a dielectric ceramic having a large Q _{u and} a small absolute value of τ _f can be obtained. If the temperature of the above “firing” is lower than 850 ° C., it is difficult to densify.
And τ _f falls outside the practical range. Further, Pt,
Simultaneous firing with conductor materials such as Ag and Cu, which have lower heat resistance than Pd or the like, becomes difficult. This firing temperature is 850-95
A range of 0 ° C. is particularly preferable.
_u is large, tau absolute value of _f is small, it can be obtained and a high denseness low temperature fired dielectric ceramic. The firing temperature is preferably lower than the calcining temperature in order to enhance the dielectric properties of the porcelain obtained.

Although the low-temperature fired dielectric ceramic of the present invention obtained as described above is fired at a low temperature, it has a water absorption of less than 0.1% as in the third invention, Very dense. Further, a Q _u, the product of the measured frequency f of the Q _u, Q _u × f is, even when relatively high ratio of the glass exceeds 8 wt%, 700-90
0 GHz, especially 750 to 850 GHz, and τ _f is +
A dielectric porcelain having a dielectric constant of 20 to -20 ppm / ° C. and sufficient for practical use can be obtained.

Further, when the amount ratio of glass is 1 to 8% by weight, Q _u × f is 1200 to 17% as in the fourth invention.
It is 00 GHz, τ _f is +20 to −20 ppm / ° C., and a dielectric ceramic with smaller dielectric loss can be obtained. Also, in the present invention, this Q _u × f is 1400 G
Hz or more, especially 1450 GHz or more, τ _f is + 15−−
A dielectric ceramic having very excellent dielectric properties of 20 ppm / ° C., particularly +13 to −17 ppm / ° C. can be obtained.

In the present invention, a glass component having a specific transition point and further a glass component having a specific composition are added to a calcined material of a dielectric material having a specific composition, followed by firing. Thereby, it is considered that a reaction occurs between the calcined product and the liquid phase in which the glass is molten, a reaction product in the liquid phase is generated, and sintering in the liquid phase is promoted. In particular, when a glass having a transition point of 450 ° C. or less and containing PbO is used, the viscosity of the glass melt at a sintering temperature of about 900 ° C. is sufficiently reduced, and the molten glass and the dielectric It is presumed that the sintering progressed due to the chemical reaction with the raw material, and the densification at a low temperature of about 900 ° C. became possible.

Actually, the crystal phase of the sintered body obtained in the present invention is different from the case where no glass component is added. In particular, the present invention, BaO-Nd ₂ O ₃ -
In a dielectric composition in which Y ₂ O ₃ is contained in a TiO ₂ composition and a glass system containing PbO and an oxide of an alkali metal element, in addition to its high reactivity, a specific combination is obtained by a combination of both. It is presumed that a eutectic composition liquid is generated, and thereby a remarkable synergistic effect of promoting sintering is exerted.

[0022]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described specifically with reference to examples. (1) Preparation of Dielectric Material The dielectric material obtained after calcining each powder of BaCO ₃ , Nd ₂ O ₃ , TiO ₂ and Y ₂ O _{3 having} a purity of 99.9% has the composition shown in Table 1. And crushed and mixed dry by a mixer. The obtained mixed powder was calcined at a temperature of 1100 ° C. for 4 hours in an air atmosphere. Water was added to this calcined product, wet-pulverized, and then dried to obtain a dielectric material having an average particle size of about 1.5 μm. Table 2 shows the quantitative ratios of the components in Table 1 by numerical values corresponding to the second invention. In Tables 1 and 2, ** indicates that the quantitative ratio of each oxide is out of the range of the first invention or the second invention.

[0023]

[Table 1]

[0024]

[Table 2]

(2) Preparation of glass powder Pb ₃ O ₄ , SiO ₂ , H ₃ BO ₃ , ZnO, CaO,
Each powder of Bi ₂ O ₃ , Al ₂ O ₃ and Na ₂ CO ₃ was
The resulting glass powder was weighed so as to have the composition shown in Table 3, mixed, melted at a temperature of 1100 ° C. for 2 hours,
It was poured into water to obtain a glass. Water was added to the glass and wet-pulverized, followed by drying to obtain a glass powder having an average particle size of about 1.0 μm. In Table 3, ** indicates that the glass transition point is out of the range of the invention.

[0026]

[Table 3]

(3) Preparation of low-temperature fired dielectric porcelain Examples 1 to 30 and Comparative Examples 1 to 16 Combinations and amount ratios of the dielectric raw materials and glass powder obtained as described above are shown in Tables 4 to 6. After mixing in ethanol and drying, a resin was added and granulated. Thereafter, the granulated powder was pressed at a pressure of 800 kg / cm ² to a diameter of 1
It was formed into a column having a height of 6 mm and a height of 10 mm. Then
CIP (isotropic isostatic pressing) treatment is performed at a pressure of 1500 kg / cm ² , and the molded body after the treatment is subjected to 90
Baking was performed at a temperature of 0 ° C. for 2 hours. In Example _{1~10, PbO-B 2 O 3} -SiO 2 glass powder in Example _{11~20, PbO-ZnO-B 2} O 3 -SiO 2
Glass powder was used. In Example 21 to 30 was used a powder of _{PbO-Na 2 O-B 2} O 3 -SiO 2 glass or _{PbO-Na 2 O-ZnO-} B 2 O 3 -SiO 2 glass.

After polishing the low-temperature fired dielectric porcelain obtained as described above, ε _r , Q _u and τ _f (temperature range) at a measurement frequency of 3.0 GHz were measured by a parallel conductor plate type dielectric resonator method. ; 25-80 ° C). Those having large dielectric loss and failing to obtain a resonance waveform are shown as unmeasurable in Table 6. Further, the water absorption of the dielectric porcelain was measured according to JIS C2141. Table 4 shows the results of Examples 1 to 20, Table 5 shows the results of Examples 21 to 30, and Table 6 shows the results of Comparative Examples 1 to 16. Table 4
6, the result of the dielectric loss is represented by (Qu × f).
f is the frequency at which the dielectric loss is measured, but there is some variation every time Qu is measured, and the form of the product more accurately represents the dielectric loss. In Table 6, * represents a dielectric material whose composition is out of the range of the invention or a glass powder whose transition point is out of the range of the invention.

[0029]

[Table 4]

[0030]

[Table 5]

[0031]

[Table 6]

According to the results of Tables 4 and 5, Examples 1 to 30
In each case, the water absorption is less than 0.1%, and it can be seen that a sintered body having high density is obtained. Also,
Examples 1 to 10 in which the ratio by weight of glass powder was relatively high at 10% by weight
Even 20, the Q _u × f be more than 750GHz, dielectric loss, practically sufficiently small. Further, the absolute value of τ _f is as small as 20 ppm / ° C. at the maximum, and it can be seen that a dielectric ceramic having excellent dielectric properties has been obtained. Examples 21 to 21
In No. 30, glass powder containing an oxide of an alkali metal element (Na ₂ O) is used, and the amount ratio is 5% by weight, which is half of Examples 1 to 20, but it is sufficiently densified. ing. Further, although τ _f is substantially the same as in Examples 1 to 20,
It can be seen that because there is little glass, Q _u × f is greatly improved to 1460 GHz or more. Thus, in Examples 21 to 30, the effect of the oxide of the alkali metal element in the glass is supported.

On the other hand, according to the results in Table 6, in Comparative Examples 1 and 2 in which Nd ₂ O ₃ slightly exceeds the upper limit, densification progresses and τ _f is good, but ε _r and Q _u are good. It can be seen that xf is very poor. In Comparative Examples 3 and 4 in which TiO ₂ slightly exceeded the upper limit and in Comparative Example 5 in which Y ₂ O ₃ was not contained, although τ _f was largely shifted to the positive side although densification was performed. I have. Conversely, in Comparative Example 6 in which Y ₂ O ₃ slightly exceeded the upper limit, τ _f was shifted to the negative side by a very large amount, indicating that the dielectric ceramics were not practically usable.

Further, in Comparative Examples 7 and 8 in which Y ₂ O ₃ greatly exceeded the upper limit and in Comparative Examples 7 to 10 in which BaO exceeded the upper limit and TiO ₂ was less than the lower limit, ε _r , Q _u × f and τ
Except for Comparative Example 9 in which each of _f was very poor, the dielectric loss was too large to measure the dielectric properties. still,
In Comparative Examples 13 to 16, in which the glass transition point exceeded the upper limit, the water absorption was very high, the compactness was low, and the dielectric loss was too large to measure the dielectric properties. It can also be seen that the higher the glass transition point, the higher the water absorption tends to be.

Examples 31 to 35 and Comparative Examples 17 to 21 In each of the combinations selected from the dielectric raw materials shown in Table 1 and the glass powder shown in Table 3,
A dielectric porcelain was prepared in the same manner as in the comparative example, and its water absorption and dielectric properties were measured in the same manner. Table 7 shows the numbers of the compositions of the dielectric raw material and the glass powder, their ratios, and the results of measurement of the water absorption and the dielectric properties. still,
In Table 7, ** indicates that the glass content is out of the range of the invention. Further, in Table 7, those having a large dielectric loss and failing to obtain a resonance waveform are described as unmeasurable.

[0036]

[Table 7]

According to the results shown in Table 7, in Examples 31 to 35 in which the amount ratio of the glass powder is in the range of 1 to 20 parts by weight, a dielectric porcelain excellent in both denseness and dielectric properties was obtained. I understand. Also, there is no significant difference in Q _u × f when the amount ratio of glass powder is 20% by weight and 15% by weight, but when the amount ratio of glass powder is 7% by weight or less, Q _u × f is considerably improved. . Furthermore, in Example 35 in which the amount ratio of the glass powder is the lower limit, it can be seen that densification has progressed and a dielectric ceramic having excellent dielectric properties has been obtained. On the other hand, in Comparative Example 17 in which no glass powder was blended and in Comparative Example 18 in which 0.1% by weight of glass powder was blended, the water absorption was large, the compactness was very low, and the dielectric properties could not be measured. In Comparative Examples 19 to 21 in which 25 parts by weight or more of the glass powder was used, although the denseness was high, the dielectric properties could not be measured.

[0038]

Low-temperature sintered dielectric ceramic having a specific composition of according to the present invention the first and second invention has a high denseness, and the absolute value of with tau _f Q _u is large is small, in particular, the third and fourth
According to the present invention, it is possible to obtain a dielectric ceramic having a very high density and excellent dielectric properties. According to the fifth invention, the dielectric raw material powder prepared to have the specific composition of the first and second inventions and the glass powder having a specific transition point are fired at a relatively low temperature. Thereby, a low-temperature fired dielectric ceramic having both excellent compactness and dielectric properties can be manufactured. In particular, by using the glass powder specified in the sixth and seventh inventions and further using the calcined powder and the glass powder having the average particle diameter specified in the eighth invention, the amount of the glass powder used is small. Even in such a case, a low-temperature fired dielectric porcelain excellent in denseness and dielectric properties can be obtained without any problem.

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Kazushige Obayashi 14-18 Takatsuji-cho, Mizuho-ku, Nagoya-shi, Aichi Japan Special Ceramics Co., Ltd.

Claims (8)

[Claims] 1. The composition formula is xBaO.yNd ₂ O ₃ .zT.
iO ₂ [where the units of x, y and z are mol%,
8.5 ≦ x ≦ 20, 5 ≦ y ≦ 23, 62 ≦ z ≦ 85, and x + y + z = 100. Relative to 100 parts by weight of the composition represented by], of 0.5 to 15 parts by weight of Y ₂
99 to 80% by weight of a dielectric material containing O ₃ ;
A low-temperature fired dielectric porcelain, which is a sintered body composed of 1 to 20% by weight of glass having a transition point of 450 ° C. or lower. 2. The composition formula is xBaO.yNd ₂ O ₃ .zT.
iO ₂ .wY ₂ O ₃ [where the units of x, y, z and w are mol%, and 7.8 ≦ x ≦ 20, 4.7 ≦ y ≦ 23,
56.4 ≦ z ≦ 85, 0 <w ≦ 9.1, and x
+ Y + z + w = 100. And 99 to 80% by weight of a dielectric material represented by the following formula:
Low-temperature fired dielectric porcelain, characterized in that it is a sintered body consisting of up to 20% by weight. 3. The low-temperature fired dielectric ceramic according to claim 1, wherein the water absorption is 0.1% or less. 4. The glass according to claim 1, wherein the glass is 1 to 8% by weight, and a product of a no-load Q value and a measurement frequency of the no-load Q value is 120.
0 to 1700 GHz, and the temperature coefficient of the resonance frequency is +
The low-temperature fired dielectric ceramic according to any one of claims 1 to 3, wherein the temperature is 20 to -20 ppm / ° C. 5. The composition formula is xBaO.yNd ₂ O ₃ .zT.
iO ₂ [where the units of x, y and z are mol%,
8.5 ≦ x ≦ 20, 5 ≦ y ≦ 23, 62 ≦ z ≦ 85, and x + y + z = 100. Relative to 100 parts by weight of the composition represented by], of 0.5 to 15 parts by weight of Y ₂
After mixing the raw materials so as to have a composition containing O ₃ ,
A calcined material is manufactured by calcining at 900 to 1200 ° C., and then the calcined material is pulverized, and the calcined powder obtained is 99 to 85% by weight and a glass powder having a transition point of 450 ° C. or less 1 to 15%.
% By weight and then molded, then 850-10
A method for producing a low-temperature fired dielectric porcelain characterized by firing at 00C. 6. The total amount of the above glass is 100 mol%.
6. The method for producing a low-temperature-fired dielectric ceramic according to claim 5, wherein said low-temperature-fired dielectric ceramic contains 20 to 60 mol% of PbO. 7. The above glass has a total amount of 100 mol%.
And 20 to 60 mol% of PbO and 0.1 to
5 mol% of A ₂ O (where, A is an alkali metal element.) And low-temperature sintered dielectric manufacturing method of ceramics of claim 5 further comprising a. 8. The method for producing a low-temperature fired dielectric ceramic according to claim 5, wherein the calcined powder and the glass powder have an average particle size of 0.1 to 1.5 μm.