JPH10190064A - Luminous diode and led display using it - Google Patents

Luminous diode and led display using it

Info

Publication number
JPH10190064A
JPH10190064A JP34364496A JP34364496A JPH10190064A JP H10190064 A JPH10190064 A JP H10190064A JP 34364496 A JP34364496 A JP 34364496A JP 34364496 A JP34364496 A JP 34364496A JP H10190064 A JPH10190064 A JP H10190064A
Authority
JP
Japan
Prior art keywords
light emitting
lead
light
emitting diode
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP34364496A
Other languages
Japanese (ja)
Inventor
Hirokazu Yoshida
寛和 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP34364496A priority Critical patent/JPH10190064A/en
Publication of JPH10190064A publication Critical patent/JPH10190064A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
    • H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
    • H01L2224/4848—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball outside the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

PROBLEM TO BE SOLVED: To obtain a luminous diode stopping down a directional angle of lights from a luminous element in a desired direction by a method wherein a stopping member for stopping down lights from the luminous element on a first lead top end in a direction between first and second leads is provided. SOLUTION: A lead comprises a mount lead which is a first lead 102 arranging at least a luminous element 105; and an inner lead which is a second lead 103 which is electrically connected to the luminous element 105. A stopping member 101 is used for stopping down lights from the luminous element 105 on a top end of the first lead 102 in a desired direction, and is provided considering a direction between the leads 102 and 103 of a luminous diode. This stopping member 101 can be selected in various forms such as a crescent moon when viewing it from a luminous observation surface. Thereby, lights emitted in a direction of the stopping member 101 can be stabilized, and shielded and/or reflected. Accordingly, the luminous diode having directional characteristics stabilizing a desired direction can be formed.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本願発明は、所望の指向特性
を有する発光ダイオードに係わり、特に、所望方向の指
向特性を安定して絞ることができる量産性の良い発光ダ
イオード及びそれを用いたＬＥＤ表示器に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode having a desired directional characteristic, and more particularly, to a light emitting diode with good mass productivity capable of stably narrowing a directional characteristic in a desired direction and an LED display using the same. About the vessel.

【０００２】[0002]

【従来の技術】今日、高輝度に発光可能な発光ダイオー
ドがＲＧＢにそれぞれ開発されたことに伴い、光センサ
ー、信号機やＬＥＤディスプレイなど種々の分野に利用
され始めている。2. Description of the Related Art Today, with the development of light emitting diodes capable of emitting light at high luminance in RGB, respectively, they have begun to be used in various fields such as optical sensors, traffic lights, and LED displays.

【０００３】この種の発光ダイオードの一例を図８及び
図９に示す。図８は発光観測面側から見た正面図であ
り、図９は、図８のＸ−Ｘ断面図である。これらの図に
しめされるように、２本以上一対のリードのうちの一方
のリードの先端部に、カップ部を設けて、このカップ内
に発光素子をダイボンドし、この発光素子と他方のリー
ドの先端部とを金属線にてワイヤーボンディングしたの
ち、両リードの先端の部分を透光性樹脂などによってモ
ールドしている。この発光ダイオードを駆動基板等に接
続させ電力を供給させると比較的等方的に光が放出され
る。このような、発光ダイオードは、図１０の如き発光
特性を持つ。FIGS. 8 and 9 show an example of this type of light emitting diode. FIG. 8 is a front view as viewed from the light emission observation surface side, and FIG. 9 is a cross-sectional view along XX of FIG. As shown in these figures, a cup portion is provided at the tip of one of a pair of two or more leads, a light emitting element is die-bonded in the cup, and the light emitting element and the other lead are connected. After wire bonding with a metal wire with a metal wire, the tip portions of both leads are molded with a translucent resin or the like. When the light emitting diode is connected to a driving substrate or the like and supplied with electric power, light is emitted relatively isotropically. Such a light emitting diode has a light emitting characteristic as shown in FIG.

【０００４】従って、このような発光ダイオードを基板
上に配置し各種発光機器を構成する場合、発光機器など
の特性により各発光ダイオードにおいてＸ軸方向による
光の広がりとＹ軸方向による光の広がりが同じである。
このことにより不要な光が放出される場合がある。Accordingly, when such light emitting diodes are arranged on a substrate to constitute various light emitting devices, light spread in the X axis direction and light spread in the Y axis direction are caused in each light emitting diode due to the characteristics of the light emitting devices. Is the same.
This may cause unnecessary light to be emitted.

【０００５】[0005]

【発明が解決しようとする課題】例えば、この発光ダイ
オードを複数隣接させた光センサーに用いた場合におい
ては、不要光により誤作動の原因となる場合がある。ま
た、ＬＥＤ表示器である信号機などのに用いた場合、全
て均等に光を放出させる必要はない。したがって、所望
の指向特性方向において、十分な発光輝度を得ることが
できない場合がある。即ち、視認者は、信号機などより
も下方に存在する。そのため信号機より上方向に放出さ
れる光は、無駄になってしまうという問題を有する。For example, when this light emitting diode is used in an optical sensor having a plurality of adjacent light emitting diodes, unnecessary light may cause a malfunction. Further, when used for a traffic light or the like which is an LED display, it is not necessary to uniformly emit light. Therefore, it may not be possible to obtain sufficient light emission luminance in a desired directional characteristic direction. That is, the viewer is present below a traffic light or the like. Therefore, there is a problem that light emitted upward from the traffic light is wasted.

【０００６】このように発光ダイオードを種々の発光機
器に利用する場合、その機能、使用目的に応じ所望の方
向に発光を抑制し、所望方向に輝度が向上した光特性が
要求される場合がある。また、多数の発光ダイオードを
配置した場合においても、個々の特性が揃った発光機器
とすることができる発光ダイオードが求められる。本願
発明は上記問題点を解決し、所望の方向に発光素子から
の光の指向角を安定的に絞った量産性の良い発光ダイオ
ード及びそれを用いたＬＥＤ表示装置とするものであ
る。As described above, when the light emitting diode is used in various light emitting devices, there is a case where light emission is suppressed in a desired direction according to the function and purpose of use, and there is a demand for an optical characteristic in which luminance is improved in a desired direction. . Further, even when a large number of light emitting diodes are arranged, a light emitting diode that can be a light emitting device having individual characteristics is required. SUMMARY OF THE INVENTION The present invention solves the above problems and provides a light-emitting diode with good mass productivity in which the directivity angle of light from a light-emitting element is stably narrowed in a desired direction, and an LED display device using the same.

【０００７】[0007]

【課題を解決するための手段】本願発明は、並列に配置
された第１及び第２のリードと、該第１のリード先端に
マウントされ電気的に接続された発光素子と、該発光素
子と前記第２のリードと電気的に接続する電気的接続部
材と、を有する発光ダイオードであって、前記第１のリ
ード先端上に発光素子からの光を第１及び第２のリード
間と垂直方向よりも第１及び第２のリード間方向に絞ら
れる絞り部材を有する発光ダイオードとすることにより
上記問題点が解決できるものである。SUMMARY OF THE INVENTION According to the present invention, there are provided a first and a second lead arranged in parallel, a light emitting element mounted on the tip of the first lead and electrically connected thereto, and An electrical connection member electrically connected to the second lead, wherein light from a light emitting element is applied on a tip of the first lead in a direction perpendicular to a space between the first and second leads. The above problem can be solved by using a light emitting diode having a diaphragm member that is narrowed in the direction between the first and second leads.

【０００８】また、前記絞り部材は、発光観測面側から
見て前記第１及び第２のリードが上下方向に配置された
場合における第１のリード先端の発光素子を介して上方
側及び／又は下方側設けられた突起部である発光ダイオ
ードである。さらに、前記第１及び第２のリード間と平
行にリードの一部が突出しているストッパーを有する発
光ダイオードであり、前記第１のリード先端がカップ形
状をなしており、前記絞り部材がカップと一体的に設け
られている発光ダイオードでもある。また、本願発明の
発光ダイオードを２以上基板上に配置したＬＥＤ表示器
でもある。[0008] Further, the aperture member may be located on the upper side and / or via the light emitting element at the tip of the first lead when the first and second leads are arranged vertically when viewed from the light emission observation surface side. It is a light emitting diode which is a projection provided on the lower side. Further, the light emitting diode has a stopper in which a part of the lead protrudes in parallel with the first and second leads. The tip of the first lead has a cup shape. It is also a light emitting diode provided integrally. The present invention is also an LED display in which two or more light emitting diodes of the present invention are arranged on a substrate.

【０００９】[0009]

【作用】単にモールド部材の形状を変えたものよりも発
光素子の近傍に絞り部材を設けることにより所望の指向
特性を効率よく得ることができる。さらに、発光ダイオ
ードのリード間方向を考慮した絞り部材を設けることで
絞り部材方向に放出される光を安定して遮光及び／又は
反射させる。これによって所望の方向に安定した指向特
性を有する発光ダイオードとすることができる。The desired directional characteristics can be obtained more efficiently by providing a diaphragm member near the light emitting element than simply changing the shape of the mold member. Further, by providing a diaphragm member in consideration of the direction between the leads of the light emitting diode, light emitted in the direction of the diaphragm member is stably blocked and / or reflected. As a result, a light emitting diode having stable directional characteristics in a desired direction can be obtained.

【００１０】[0010]

【発明の実施の態様】本願発明者は、種々の実験の結
果、発光素子近傍にリード方向を考慮した特定部位に絞
り部材を設けることによって、所望の発光特性を量産性
良く得られることを見出し本願発明を成すに至った。DESCRIPTION OF THE PREFERRED EMBODIMENTS As a result of various experiments, the inventor of the present application has found that a desired light emission characteristic can be obtained with good mass productivity by providing an aperture member at a specific portion near the light emitting element in consideration of the lead direction. The present invention has been accomplished.

【００１１】即ち、マウント・リードの先端上に絞り部
材を設けることにより効率よく発光特性を絞った発光ダ
イオードとすることができる。図５（Ａ）、（Ｂ）、
（Ｃ）に示す如く発光ダイオードを基板等に実装する場
合、基板に対しリード間と平行方向である図５（Ｂ）よ
りもリード間と垂直な方向である図５（Ｃ）のほうがよ
り傾きやすくなる。絞り部材を有しない発光ダイオード
は図１０（Ｘ）及び図１０（Ｙ）の如き、等方的に光が
放出される。そのため基板に対してリードの傾きが生じ
たとしても指向特性の変化が少ない。しかしながら、本
願発明の如く、絞り部材により所望方向に光を絞った発
光ダイオードとした場合においては、絞った光に対して
リードが傾くため特に大きな指向特性の誤差を生ずる場
合がある。具体的には、発光ダイオードはその配置など
により配置ズレが生ずる。指向特性を絞った発光ダイオ
ードおいては、その絞った指向特性方向における配置ズ
レ（基板に対する傾きなど）が特に大きな指向特性の変
化として現れる。本願発明は、基板に対する傾きなどを
抑制できるリード間方向に指向を絞る特定位置に絞り部
材を設けることにより良好な指向特性を安定性良く得ら
れる発光ダイオード及びそれを用いたＬＥＤ表示器とす
ることができるものである。That is, by providing the aperture member on the tip of the mount lead, it is possible to obtain a light emitting diode whose emission characteristics are efficiently reduced. 5 (A), (B),
When a light emitting diode is mounted on a substrate or the like as shown in FIG. 5C, the inclination in FIG. 5C which is perpendicular to the leads is more inclined than that in FIG. 5B which is parallel to the leads. It will be easier. The light emitting diode having no aperture member emits light isotropically as shown in FIGS. 10 (X) and 10 (Y). Therefore, even if the lead is tilted with respect to the substrate, the change in the directivity is small. However, in the case of a light emitting diode in which light is squeezed in a desired direction by a squeezing member as in the present invention, a particularly large directional characteristic error may occur because the lead is inclined with respect to the squeezed light. Specifically, the light emitting diodes are displaced due to the arrangement thereof. In a light-emitting diode with a narrowed directional characteristic, an arrangement deviation (such as inclination with respect to a substrate) in the narrowed directional characteristic direction appears as a particularly large change in the directional characteristic. An object of the present invention is to provide a light emitting diode which can obtain good directional characteristics with good stability by providing an aperture member at a specific position which narrows the directivity in a direction between leads which can suppress inclination with respect to a substrate, and an LED display using the same. Can be done.

【００１２】具体的には、金属板を打ち抜くことによっ
てリードを形成させると共にリード間方向にストッパー
を量産性良く形成させることができる。また、リードの
先端に発光素子であるＬＥＤチップを収容するカップを
形成させると共に絞り部材となる突起部を形成させる。
突起部は、リード間方向で発光ダイオードが傾斜しがた
い方向に設けられている。このようなリード先端にある
カップ内に発光素子をＡｇペーストなどを用いてダイボ
ンドさせる。これによって、発光素子の一方の電極とカ
ップとを電気的に接続をもさせることができる。発光素
子の他方の電極は、別のリード端子と金線などによりワ
イヤーボンディングされている。発光素子と電気的に導
通されたリード端子にモールド部材を形成させることに
より本願発明の発光ダイオードを形成させることができ
る。以下本願発明の構成について詳述する。More specifically, the leads can be formed by punching a metal plate, and the stoppers can be formed in the direction between the leads with good mass productivity. Further, a cup for accommodating an LED chip which is a light emitting element is formed at the tip of the lead, and a projection serving as a diaphragm member is formed.
The protrusion is provided in a direction in which the light emitting diode is hardly inclined in the direction between the leads. The light emitting element is die-bonded into the cup at the tip of the lead using an Ag paste or the like. Thus, one electrode of the light emitting element can be electrically connected to the cup. The other electrode of the light emitting element is wire-bonded to another lead terminal with a gold wire or the like. The light emitting diode of the present invention can be formed by forming a mold member on a lead terminal electrically connected to the light emitting element. Hereinafter, the configuration of the present invention will be described in detail.

【００１３】（リード１０２、１０３、４０３、）本願
発明のリードとは、少なくとも発光素子を配置させる第
１のリード１０２であるマウント・リードと、発光素子
と電気的に接続された第２のリード１０３であるインナ
ー・リードから構成される。このようなリードは、金属
板を打ち抜くことなどによって形成させることができ
る。本願発明に好適に用いられるストッパー１０３も、
金属板を打ち抜くと同時に量産性良く形成させることが
できる。また、リードを型に入れリードの先端に圧力を
加えることにより発光素子１０５であるＬＥＤチップを
収容するカップを形成させると共に絞り部材を形成させ
ることもできる。(Leads 102, 103, 403) The leads of the present invention include a mount lead as at least a first lead 102 on which a light emitting element is arranged, and a second lead electrically connected to the light emitting element. 103, which is an inner lead. Such a lead can be formed by punching a metal plate or the like. The stopper 103 suitably used in the present invention is also
It can be formed with good mass productivity at the same time as punching a metal plate. Also, by inserting the lead into a mold and applying pressure to the tip of the lead, a cup for accommodating the LED chip, which is the light emitting element 105, can be formed, and a diaphragm member can be formed.

【００１４】（第１のリード１０２）発光素子の発光効
率を向上させるために発光素子が配置される第１のリー
ド１０２であるマウント・リード先端表面は、表面粗さ
０．１Ｓ以上０．８Ｓ以下とすることが好ましい。ま
た、マウント・リードの具体的な電気抵抗としては３０
０μΩ−ｃｍ以下が好ましく、より好ましくは、３μΩ
−ｃｍ以下である。また、第１のリードの先端に複数の
発光素子を積置する場合は、発光素子からの発熱量が多
くなるため熱伝導度がよいことが求められる。具体的に
は、０．０１ｃａｌ／ｃｍ2／ｃｍ／℃以上が好ましく
より好ましくは ０．５ｃａｌ／ｃｍ2／ｃｍ／℃以上で
ある。このようなマウント・リードの具体的材料として
は、鉄、銅、鉄入り銅、錫入り銅などが好適に挙げられ
る。さらに、これらの材料に反射率を向上させる目的で
Ａｇメッキなどを施しても良い。(First Lead 102) The tip surface of the mount lead, which is the first lead 102 on which the light emitting element is arranged to improve the light emitting efficiency of the light emitting element, has a surface roughness of 0.1S or more and 0.8S or more. It is preferable to set the following. The specific electrical resistance of the mount lead is 30
0 μΩ-cm or less, more preferably, 3 μΩ
−cm or less. In the case where a plurality of light emitting elements are mounted on the tip of the first lead, good heat conductivity is required because the amount of heat generated from the light emitting elements increases. Specifically, 0.01cal / cm 2 / cm / ℃ or more preferably preferably 0.5cal / cm 2 / cm / ℃ above. As a specific material of such a mount lead, iron, copper, copper with iron, copper with tin, and the like are preferably mentioned. Further, these materials may be subjected to Ag plating or the like for the purpose of improving the reflectance.

【００１５】（カップ）発光素子が配置された第１のリ
ード１０２は、発光素子であるＬＥＤチップを配置する
と共に反射板としての機能を持たせることができる。反
射機能を向上させるためにリード先端をカップ形状にす
ることが好ましい。カップの大きさは、各ＬＥＤチップ
をダイボンド等の機器で積載するのに十分な大きさがあ
り、モールド部材による光の集光率に合わせて種々のも
のが用いられる。また、カップの形状も発光観測面側か
ら見て真円状、トラック状、楕円状、図４（Ｂ）の如く
三角形や四角形などの種々ものが挙げられる。特に、複
数の発光素子を配置させる場合は、図４（Ａ）の如くト
ラック状、楕円状、長方形状などが好ましい。(Cup) The first lead 102 on which the light emitting element is disposed can be provided with an LED chip as a light emitting element and also have a function as a reflector. In order to improve the reflection function, it is preferable that the tip of the lead has a cup shape. The size of the cup is large enough to mount each LED chip with a device such as die bonding, and various types are used in accordance with the light condensing rate of the mold member. Further, the shape of the cup may be various shapes such as a perfect circle, a track, an ellipse, and a triangle or a square as shown in FIG. In particular, when a plurality of light-emitting elements are provided, a track shape, an elliptical shape, a rectangular shape, or the like is preferable as illustrated in FIG.

【００１６】図４（Ｂ）においては、リード間方向にお
いて絞り部材が設けられていない方向により光が放出さ
れるようカップの傾斜角が絞り部材である突起部が設け
られている側よりも緩やかに形成されている。これによ
って、突起部が設けられた上方以外に効率よく光を放出
させることができる。このため、信号用などに優れた指
向特性を持つ発光ダイオードとすることができる。In FIG. 4B, the angle of inclination of the cup is gentler than that of the side provided with the projection, which is the stop member, so that light is emitted in the direction between the leads where the stop member is not provided. Is formed. Thus, light can be efficiently emitted to a portion other than the portion where the protrusion is provided. Therefore, a light emitting diode having excellent directional characteristics for signals and the like can be obtained.

【００１７】カップは、ＬＥＤチップと直接電気的に導
通させ電極として利用しても良い。また、ＬＥＤチップ
を絶縁体を介してカップと固定させ非導電性とさせても
良い。マウント・リードを発光素子の外部電極として利
用する場合は、十分な電気伝導性とボンディングワイヤ
ー等との接続性が求められる。The cup may be electrically connected directly to the LED chip and used as an electrode. Further, the LED chip may be fixed to the cup via an insulator so as to be non-conductive. When the mount lead is used as an external electrode of a light emitting element, sufficient electrical conductivity and connectivity with a bonding wire or the like are required.

【００１８】発光素子とカップとの接続は熱硬化性樹脂
などによって行うことができる。具体的には、エポキシ
樹脂などが挙げられる。また、発光素子とカップを接着
させると共に電気的に接続させるためにはＡｇ、カーボ
ン、ＩＴＯ、ＳｎＯ2などの導電性部材を含有させた導
電性ペーストや金属バンプ等を用いることができる。The connection between the light emitting element and the cup can be made by a thermosetting resin or the like. Specifically, an epoxy resin or the like is used. In addition, a conductive paste or a metal bump containing a conductive member such as Ag, carbon, ITO, or SnO 2 can be used for bonding and electrically connecting the light emitting element and the cup.

【００１９】（第２のリード１０３）第２のリード１０
３であるインナー・リードとしては、電気的接続部材１
０６であるボンディングワイヤー等との密着性及び電気
伝導性が良いことが求められる。具体的な電気抵抗とし
ては、３００μΩ−ｃｍ以下が好ましく、より好ましく
は３μΩ−ｃｍ以下である。これらの条件を満たす材料
としては、鉄、銅、鉄入り銅、錫入り銅等が挙げられ
る。これらの材料にＡｇメッキなどを施しても良い。ま
た、第２のリード１０３が導電性ワイヤー１０６と接続
される面の粗さは、導電性ワイヤーとの密着性を考慮し
て１．６Ｓ以上１０Ｓ以下が好ましい。(Second Lead 103) Second Lead 10
The inner lead 3 is an electrical connection member 1
It is required that the adhesiveness to a bonding wire and the like and the electrical conductivity be good. The specific electric resistance is preferably 300 μΩ-cm or less, and more preferably 3 μΩ-cm or less. Materials satisfying these conditions include iron, copper, iron-containing copper, tin-containing copper, and the like. Ag plating or the like may be applied to these materials. Also, the roughness of the surface where the second lead 103 is connected to the conductive wire 106 is preferably 1.6S or more and 10S or less in consideration of the adhesion to the conductive wire.

【００２０】（絞り部材１０１）本願発明の絞り部材１
０１は、第１のリードの先端上にあり発光素子１０５か
らの光を所望方向に効率よく絞るためのものである。特
に、本願発明の絞り部材１０１においては、第１のリー
ド及び第２のリードの配置方向やストッパーによって発
光ダイオードが傾斜しがたい方向に光が絞られるよう設
けられている。絞り部材は、マウント・リードと一体的
に形成させても良いし、別途形成させたものを設けても
良い。また、絞り部材は、反射率の高い材料を用いて所
望方向の光を多くすることもできるし、反射率の低い材
料を用いることによって不要光の漏洩をより抑制するこ
ともできる。(Aperture member 101) Aperture member 1 of the present invention
Numeral 01 is on the tip of the first lead for efficiently narrowing light from the light emitting element 105 in a desired direction. In particular, the aperture member 101 of the present invention is provided so that light is restricted in a direction in which the light emitting diode is hardly inclined by the arrangement direction of the first lead and the second lead and a stopper. The aperture member may be formed integrally with the mount lead, or may be formed separately. Further, the diaphragm member can increase the amount of light in a desired direction by using a material having a high reflectivity, and can further suppress unnecessary light leakage by using a material having a low reflectivity.

【００２１】さらに、絞り部材１０１は、第１のリード
１０２と同じ材料を用いて形成させても良いし、別の材
料を用いて形成させても良い。所望に応じて種々の材料
を用いることができる。いずれにしても絞り部材１０１
は、発光素子１０５の近傍において効率よく発光特性を
絞るものである。したがって、絞り部材１０１は、発光
観測面から見て図１の如く三日月状、半円状や長方形な
ど所望に応じて種々の形状を選択することができる。ま
た、絞り部材１０１、４０１は１つ以上設けることがで
きる。即ち、図４（Ａ）の如く絞り部材４０１が発光素
子４０５を挟んで２つ設けられたり、図４（Ｂ）の如く
複数の絞り部材４１１を連続的或いは、間欠的に設ける
ことによって所望の指向特性を得ることができる。絞り
部材が発光素子を挟んで２つ以上設けられた場合には、
発光観測面側正面から見て絞り部材と垂直方向により多
くの光が放出される発光ダイオードとすることができ
る。また、絞り部材である突起部４１１を間を開けて複
数配置することにより発光素子４０５からの導電性ワイ
ヤーを配置させやすくすることができる。さらに絞り部
材は、直方体の形状をとっても良いし、台形など所望の
指向特性によってリード先端上面に対して突起部の傾斜
角度を種々選択することもできる。Further, the aperture member 101 may be formed using the same material as that of the first lead 102, or may be formed using another material. Various materials can be used as desired. In any case, the aperture member 101
Is to narrow down the light emission characteristics efficiently in the vicinity of the light emitting element 105. Therefore, the aperture member 101 can be selected from various shapes such as a crescent, a semicircle, and a rectangle as shown in FIG. Further, one or more aperture members 101 and 401 can be provided. That is, as shown in FIG. 4A, two aperture members 401 are provided with the light emitting element 405 interposed therebetween, or a plurality of aperture members 411 are provided continuously or intermittently as shown in FIG. Directivity characteristics can be obtained. When two or more aperture members are provided with the light emitting element interposed therebetween,
A light emitting diode that emits more light in a direction perpendicular to the aperture member when viewed from the front of the light emission observation surface side can be provided. Further, by arranging a plurality of projections 411 as aperture members with a space therebetween, it is possible to easily arrange conductive wires from the light emitting element 405. Further, the aperture member may have a rectangular parallelepiped shape, or the inclination angle of the projection with respect to the upper surface of the lead tip may be variously selected according to a desired directional characteristic such as a trapezoid.

【００２２】特に、第１のリード１０２であるマウント
・リードと絶縁性基板であるサファイア基板を介して固
定された発光素子１０５においては、マウント・リード
の設置と共に電気的に接続させることができない。その
ため、発光素子１０５の表面側から正極及び負極の電極
と導電性ワイヤー１０６などによって電気的に接続され
る。このような導電性ワイヤー１０６をワイヤー切れな
どなく効率よく接続させるためには、絞り部材の頂点を
利用して電気的に接続させることがより好ましい。In particular, the light emitting element 105 fixed via the sapphire substrate as the insulating substrate and the mount lead as the first lead 102 cannot be electrically connected with the mounting lead. Therefore, the positive electrode and the negative electrode are electrically connected from the surface side of the light emitting element 105 by the conductive wire 106 and the like. In order to connect the conductive wires 106 efficiently without breaking the wires, it is more preferable to make electrical connection using the apex of the aperture member.

【００２３】（ストッパー１０３）ストッパー１０３と
は、発光ダイオードの実装時に装着される基板から一定
の距離を持って固定されるために好適に用いられるもの
である。したがって、ストッパー１０３の形状やリード
長におけるストッパー１０３の配置高さは、所望に応じ
て種々選択することができる。特に、リード間方向にス
トッパー１０３を設けることによりリードを形成すると
共に量産性よく生産することができる。(Stopper 103) The stopper 103 is suitably used to be fixed at a fixed distance from a substrate to be mounted when mounting the light emitting diode. Therefore, the shape of the stopper 103 and the arrangement height of the stopper 103 in the lead length can be variously selected as desired. In particular, by providing the stopper 103 in the direction between the leads, the leads can be formed and the mass production can be performed with good productivity.

【００２４】（発光素子１０５、４０５）発光素子１０
５、４０５は、液相成長法、有機金属気相成長法（ＭＯ
ＣＶＤ）、ハライド気相成長法（ＨＤＶＰＥ）や分子線
気相成長法（ＭＢＥ）等により基板上にＧａＡｌＮ、Ｚ
ｎＳ、ＺｎＳｅ、ＳｉＣ、ＧａＰ、ＧａＡｌＡｓ、Ａｌ
ＩｎＧａＰ、ＩｎＧａＮ、ＧａＮ、ＡｌＩｎＧａＮ等の
半導体を発光層として形成させたものが好適に用いられ
る。半導体の構造としては、ＭＩＳ接合、ＰＩＮ接合や
ＰＮ接合を有したホモ構造、ヘテロ構造あるいはダブル
へテロ構成のものが挙げられる。発光層の材料やその混
晶度によって発光波長を紫外光から赤外光まで種々選択
することができる。(Light Emitting Elements 105 and 405) Light Emitting Element 10
5, 405 are liquid phase epitaxy, metal organic vapor phase epitaxy (MO
CVD), halide vapor deposition (HDVPE), molecular beam vapor deposition (MBE), etc.
nS, ZnSe, SiC, GaP, GaAlAs, Al
A semiconductor in which a semiconductor such as InGaP, InGaN, GaN, or AlInGaN is formed as a light-emitting layer is preferably used. Examples of the semiconductor structure include a homostructure having a MIS junction, a PIN junction, and a PN junction, a heterostructure, and a double heterostructure. The emission wavelength can be variously selected from ultraviolet light to infrared light depending on the material of the light emitting layer and the degree of mixed crystal thereof.

【００２５】また、量子効果を持たすために単一量子井
戸構造や、井戸層と井戸層よりもバンドギャップの大き
い障壁層を井戸＋障壁＋・・・＋障壁＋井戸或いはその
逆として形成させた多重量子井戸構造としても良い。こ
れにより発光出力の高い発光素子とすることができる。
このような発光素子は、用途などによって種々選択する
ことができる。しかしながら、高輝度に発光する発光素
子は、本願発明の効果が顕著に現れるためより好まし
い。このような、高輝度発光可能な半導体材料として緑
色系及び青色系を窒化物系化合物半導体を用いることが
好ましく、また、赤色系ではガリウム・アルミニウム・
砒素系の半導体やアルミニウム・インジュウム・ガリウ
ム・燐系の半導体を用いることが好ましいが、このよう
な発光素子として窒化物系化合物半導体の一例を示す。In order to have a quantum effect, a single quantum well structure or a well layer and a barrier layer having a larger band gap than the well layer are formed as well + barrier +... + Barrier + well or vice versa. A multiple quantum well structure may be used. Thus, a light-emitting element having a high light-emission output can be obtained.
Such a light emitting element can be variously selected depending on the use and the like. However, a light emitting element that emits light with high luminance is more preferable because the effects of the present invention are remarkably exhibited. It is preferable to use nitride-based compound semiconductors for the green and blue colors as such a semiconductor material capable of emitting high-luminance, and gallium aluminum aluminum for the red color.
It is preferable to use an arsenic-based semiconductor or an aluminum-indium-gallium-phosphorus-based semiconductor. An example of a nitride-based compound semiconductor is described as such a light-emitting element.

【００２６】窒化物系化合物半導体を形成させる半導体
基板にはサファイヤ、スピネル、ＳｉＣ、Ｓｉ、Ｚｎ
Ｏ、窒化ガリウム系単結晶等の材料を好適に用いること
ができる。結晶性の良い窒化ガリウム系半導体を形成さ
せるためにはサファイヤ基板を用いることが好ましく、
サファイヤ基板との格子不整合を是正するためにバッフ
ァー層を形成することが望ましい。バッファー層は、低
温で形成させた窒化アルミニウムや窒化ガリウムなどが
好適に用いられる。Sapphire, spinel, SiC, Si, Zn are formed on a semiconductor substrate on which a nitride-based compound semiconductor is formed.
Materials such as O and a gallium nitride single crystal can be suitably used. In order to form a gallium nitride based semiconductor with good crystallinity, it is preferable to use a sapphire substrate,
It is desirable to form a buffer layer to correct lattice mismatch with the sapphire substrate. For the buffer layer, aluminum nitride, gallium nitride, or the like formed at a low temperature is preferably used.

【００２７】窒化物系化合物半導体を使用したＰＮ接合
を有する発光素子例としては、バッファー層を介したサ
ファイア基板上に、Ｎ型窒化ガリウムで形成した第１の
コンタクト層、量子効果を有する程度に薄膜で形成させ
た窒化インジウム・ガリウムの活性層、Ｐ型窒化アルミ
ニウム・ガリウムで形成したクラッド層、Ｐ型窒化ガリ
ウムで形成した第２のコンタクト層を順に積層させた構
成などとすることができる。As an example of a light emitting device having a PN junction using a nitride-based compound semiconductor, a first contact layer made of N-type gallium nitride on a sapphire substrate with a buffer layer interposed therebetween has a quantum effect. A structure in which an active layer of indium gallium nitride formed of a thin film, a cladding layer formed of P-type aluminum gallium nitride, and a second contact layer formed of P-type gallium nitride may be sequentially stacked.

【００２８】なお、窒化物系化合物半導体は、不純物を
ドープしない状態でＮ型導電性を示す。発光効率を向上
させるなど所望のＮ型窒化ガリウム半導体を形成させる
場合は、Ｎ型ドーパントとしてＳｉ、Ｇｅ、Ｓｅ、Ｔ
ｅ、Ｃ等を適宜導入することが好ましい。一方、Ｐ型窒
化ガリウム半導体を形成させる場合は、Ｐ型ドーパンド
であるＺｎ、Ｍｇ、Ｂｅ、Ｃａ、Ｓｒ、Ｂａ等をドープ
させる。窒化ガリウム系化合物半導体は、Ｐ型ドーパン
トをドープしただけではＰ型化しにくいためＰ型ドーパ
ント導入後に、炉による加熱、低速電子線照射やプラズ
マ照射等によりアニールすることでＰ型化させることが
好ましい。It should be noted that the nitride-based compound semiconductor shows N-type conductivity without being doped with impurities. When a desired N-type gallium nitride semiconductor is formed, for example, to improve luminous efficiency, Si, Ge, Se, T
It is preferable to appropriately introduce e, C, and the like. On the other hand, in the case of forming a P-type gallium nitride semiconductor, P-type dopants such as Zn, Mg, Be, Ca, Sr, and Ba are doped. The gallium nitride-based compound semiconductor is difficult to be converted into a P-type simply by doping with a P-type dopant, and thus it is preferable to convert the gallium nitride-based compound into a P-type by introducing a P-type dopant and then annealing by heating in a furnace, low-speed electron beam irradiation, plasma irradiation, or the like. .

【００２９】絶縁性基板を用いた発光素子の場合は、絶
縁性基板の一部を除去する、或いは半導体表面側からＰ
型及びＮ型用の電極面をとるためにＰ型半導体及びＮ型
半導体の露出面をエッチングすることなどによりそれぞ
れ形成させることができる。各半導体層上にスパッタリ
ング法や真空蒸着法などを用いて所望の形状の各電極を
形成させる。In the case of a light emitting device using an insulating substrate, a part of the insulating substrate is removed or P
It can be formed by, for example, etching the exposed surfaces of the P-type semiconductor and the N-type semiconductor to obtain the electrode surfaces for the mold and the N-type. Each electrode having a desired shape is formed on each semiconductor layer by using a sputtering method, a vacuum evaporation method, or the like.

【００３０】電極が形成された半導体ウエハー等をダイ
ヤモンド製の刃先を有するブレードが回転するダイシン
グソーにより直接フルカットするか、又は刃先幅よりも
広い幅の溝を切り込んだ後（ハーフカット）、外力によ
って半導体ウエハーを割る。あるいは、先端のダイヤモ
ンド針が往復直線運動するスクライバーにより半導体ウ
エハーに極めて細いスクライブライン（経線）を例えば
碁盤目状に引いた後、外力によってウエハーを割り半導
体ウエハーからチップ状にカットする。こうして発光素
子であるＬＥＤチップを形成することができる。The semiconductor wafer or the like on which the electrodes are formed is directly full-cut by a dicing saw with a blade having a diamond-made blade, or after a groove having a width wider than the width of the blade is cut (half-cut). Cracks the semiconductor wafer. Alternatively, an extremely thin scribe line (meridian) is drawn on the semiconductor wafer, for example, in a checkerboard pattern by a scriber in which a diamond needle at the tip reciprocates linearly, and then the wafer is cut by an external force and cut into chips from the semiconductor wafer. Thus, an LED chip which is a light emitting element can be formed.

【００３１】発光素子は、所望の波長によって複数用い
ることができ、例えば青色を２個、緑色及び赤色をそれ
ぞれ１個ずつとすることができる。また、発光波長は必
ずしも青色、緑色、赤色に限られる物ではなく、所望に
応じて黄色などが発光できるように半導体のバンドギャ
プを調節すれば良い。具体的な例としては、青色と緑色
の発光素子に挟まれた黄色発光素子を用いて白色光を発
光する発光ダイオードとすることができる。なお、フル
カラー発光ダイオードとして利用するためには、赤色系
の発光波長が６００ｎｍから７００ｎｍ、緑色系が４９
５ｎｍから５６５ｎｍ、青色系の発光波長が４３０ｎｍ
から４９０ｎｍであることが好ましい。A plurality of light emitting elements can be used depending on the desired wavelength. For example, two blue light emitting elements and one each of green light and red light can be used. Further, the emission wavelength is not necessarily limited to blue, green, and red, and the band gap of the semiconductor may be adjusted so that yellow or the like can be emitted as desired. As a specific example, a light-emitting diode that emits white light using a yellow light-emitting element sandwiched between blue and green light-emitting elements can be used. In order to use the light emitting diode as a full-color light emitting diode, the emission wavelength of red light is from 600 nm to 700 nm and that of green light is 49 nm.
5 nm to 565 nm, blue emission wavelength is 430 nm
To 490 nm.

【００３２】（電気的接続部材１０６、４０６）電気的
接続部材１０６、４０６としては、各発光素子１０５、
４０５の電極とのオーミック性、機械的接続性、電気伝
導性及び熱伝導性がよいものが求められる。熱伝導度と
しては０．０１ｃａｌ／ｃｍ2／ｃｍ／℃以上が好まし
く、より好ましくは０．５ｃａｌ／ｃｍ2／ｃｍ／℃以
上である。具体的には、金、銅、白金、アルミニウム等
及びそれらの合金を用いたボンディングワイヤーなどが
好適に挙げられる。作業性を考慮してアルミニウム線あ
るいは金線がより好ましい。(Electrical connecting members 106 and 406) As the electrical connecting members 106 and 406,
A material having good ohmic properties, mechanical connectivity, electrical conductivity, and thermal conductivity with the electrode 405 is required. The thermal conductivity is preferably at least 0.01 cal / cm 2 / cm / ° C., more preferably at least 0.5 cal / cm 2 / cm / ° C. Specifically, gold, copper, platinum, aluminum, and the like, and a bonding wire using an alloy thereof, and the like are preferably mentioned. An aluminum wire or a gold wire is more preferable in consideration of workability.

【００３３】（モールド部材１０７、４０７）モールド
部材１０７、４０７は、発光素子１０５、４０５及び電
気的接続部材１０６、４０６等を外部から保護するため
に設けられることが好ましい。また、モールド部材の形
状は、所望に応じて種々選択することができる。特に、
本願発明の絞り部材により指向角を絞ることに加えて、
モールド部材１０７の形状を調節させることは特に効果
が大きい。このようなモールド部材の形状としてリード
先端上の発光観測面側から見て円形、楕円形や縁あり又
は縁なしの多角形として三角形形状など種々選択するこ
とができる。更に詳しくは、発光観測面側から見てリー
ド間方向に対して垂直方向に長辺や長軸が配置されたト
ラック形状や楕円形状などとすることができる。(Mold members 107 and 407) The mold members 107 and 407 are preferably provided to protect the light emitting elements 105 and 405 and the electrical connection members 106 and 406 from the outside. Further, the shape of the mold member can be variously selected as desired. Especially,
In addition to reducing the directivity angle by the diaphragm member of the present invention,
Adjusting the shape of the mold member 107 is particularly effective. As the shape of such a mold member, various shapes such as a circular shape, an elliptical shape, and a triangular shape with or without an edge can be selected as viewed from the light emission observation surface side of the lead end. More specifically, it can be a track shape or an elliptical shape in which long sides and long axes are arranged in a direction perpendicular to a direction between leads when viewed from the light emission observation surface side.

【００３４】モールド部材１０７、４０７中に拡散剤を
含有させることによって発光素子であるＬＥＤチップか
らの指向性を緩和させ視野角を所望に調節することがで
きる。モールド部材中を異なる材質によって凸レンズ形
状、凹レンズ形状やそれらを複数組み合わせることによ
って指向特性を調整することもできる。また、モールド
部材自体に着色させ所望外の波長をカットするフィルタ
ーの役目をもたすこともできる。更に、蛍光物質を含有
させることによって白色系など所望の光が発光可能な発
光ダイオードとすることができる。By including a diffusing agent in the mold members 107 and 407, the directivity from the LED chip as the light emitting element can be relaxed and the viewing angle can be adjusted as desired. The directional characteristics can also be adjusted by combining a convex lens shape, a concave lens shape, and a plurality of them with different materials in the mold member. In addition, it can also serve as a filter that colors the mold member itself and cuts an undesired wavelength. Further, a light emitting diode capable of emitting desired light such as white light can be obtained by containing a fluorescent substance.

【００３５】上記モールド部材の材料としては、エポキ
シ樹脂、ユリア樹脂、シリコーン樹脂やフッ素樹脂など
の耐候性に優れた透光性樹脂やガラスなどが好適に用い
られる。また、拡散剤としては、チタン酸バリウム、酸
化チタン、酸化アルミニウム、酸化珪素等が好適に用い
られる。また、蛍光物質としてセリウムで付活したイッ
トリウム・アルミニウム・ガーネット系蛍光体などが好
適に挙げられる。As the material of the mold member, a translucent resin having excellent weather resistance, such as epoxy resin, urea resin, silicone resin, and fluororesin, and glass are preferably used. As the diffusing agent, barium titanate, titanium oxide, aluminum oxide, silicon oxide and the like are preferably used. Further, yttrium / aluminum / garnet-based phosphor activated with cerium is preferably used as the fluorescent substance.

【００３６】（表示装置）表示装置としては、図６の如
く発光ダイオードを複数個配置した表示パネルと駆動回
路である点灯回路など電気的に接続されたものが用いら
れる。本願発明において、表示装置の左右方向における
視野角を増やすためには上下方向にリード間が固定され
たＬＥＤ表示器を用いることが好ましい。このような、
発光ダイオードを任意形状に配置し標識などに利用でき
るが、表示装置としては、マトリクッス状などに配置し
駆動回路からの出力パルスによってデイスプレイ等に使
用することができる。駆動回路としては、図７の如き入
力される表示データを一時的に記憶させるＲＡＭ（Ｒａ
ｎｄｏｍ、Ａｃｃｅｓｓ、Ｍｅｍｏｒｙ）と、ＲＡＭに
記憶されるデータから発光ダイオードを所定の明るさに
点灯させるための階調信号を演算する階調制御回路と、
階調制御回路の出力信号でスイッチングされて、発光ダ
イオードを点灯させるドライバーとを備える。階調制御
回路は、ＲＡＭに記憶されるデータから発光ダイオード
の点灯時間を演算してパルス信号を出力する。階調制御
回路から出力されるパルス信号である階調信号は、発光
ダイオードのドライバーに入力されてドライバをスイッ
チングさせる。ドライバーがオンになると発光ダイオー
ドが点灯され、オフになると消灯される。以下、本願発
明の実施例について説明するが、本願発明は具体的実施
例のみに限定されるものではないことは言うまでもな
い。(Display Device) As the display device, a display device in which a plurality of light-emitting diodes are arranged as shown in FIG. 6 and a lighting circuit which is a driving circuit are electrically connected. In the present invention, in order to increase the viewing angle in the left-right direction of the display device, it is preferable to use an LED display having leads fixed vertically. like this,
A light emitting diode can be arranged in an arbitrary shape and used for a sign or the like, but as a display device, it can be arranged in a matrix shape or the like and used for a display or the like by an output pulse from a drive circuit. As the driving circuit, a RAM (Ra) for temporarily storing input display data as shown in FIG.
ndom, Access, Memory) and a gradation control circuit for calculating a gradation signal for lighting the light emitting diode to a predetermined brightness from data stored in the RAM;
A driver that is switched by the output signal of the gradation control circuit and turns on the light emitting diode. The gradation control circuit calculates a lighting time of the light emitting diode from data stored in the RAM and outputs a pulse signal. A gradation signal, which is a pulse signal output from the gradation control circuit, is input to a driver of the light emitting diode to switch the driver. The light emitting diode is turned on when the driver is turned on, and is turned off when the driver is turned off. Hereinafter, embodiments of the present invention will be described, but it goes without saying that the present invention is not limited to only specific embodiments.

【００３７】[0037]

【実施例】【Example】

（実施例１）リードの材料として、鉄入り銅の長方形金
属板を用いた。厚さ約０．７ｍｍの金属板を打ち抜いた
後、先端方向に加圧することでカップ及び絞り部材を形
成させた。これにＡｇメッキを施すことによりダイバー
によって接続されたリードを形成させた。絞り部材は、
リード間方向に指向特性を絞るものとして図１の如く、
発光観測面側から見て三日月形状に形成されている。(Example 1) A rectangular metal plate of iron-containing copper was used as a material for a lead. After punching a metal plate having a thickness of about 0.7 mm, the cup and the squeezing member were formed by applying pressure in the tip direction. This was subjected to Ag plating to form leads connected by a diver. The aperture member is
As shown in FIG. 1, the directivity is narrowed in the direction between the leads.
It is formed in a crescent shape when viewed from the emission observation surface side.

【００３８】Ａｇメッキされたマウント・リードのカッ
プ内に発光素子を配置させた。サファイア基板上にＩｎ
ＧａＮを活性層として利用した発光素子をエポキシ樹脂
を用いてダイボンダーでダイボンドさせた。発光素子の
各電極と、第２のリードであるインナー・リード及び第
１のリードであるマウント・リードとＡｕ線によってワ
イヤーボンディングさせた。第１のリードへのワイヤー
ボンディングは、絞り部材の頂上において行ってある。
このように発光素子が電気的に接続されたリードの一部
分を弾丸形状を有する中空状の型中に配置させた。中空
型中にエポキシ樹脂を注入後、１５０℃１５時間で硬化
させ発光観測面から見て真円状のモールド部を形成させ
た。ダイバーの一部分をカットしてストッパーを形成さ
せた。こうして形成された発光ダイオードの発光特性を
図３（Ｘ）及び（Ｙ）に示す。The light emitting device was placed in the cup of the Ag-plated mount lead. In on sapphire substrate
A light emitting element using GaN as an active layer was die-bonded with an epoxy resin using a die bonder. Each electrode of the light emitting element was wire-bonded to an inner lead as a second lead and a mount lead as a first lead by an Au wire. Wire bonding to the first lead is performed at the top of the aperture member.
A part of the lead to which the light emitting element was electrically connected in this manner was arranged in a hollow mold having a bullet shape. After injecting the epoxy resin into the hollow mold, it was cured at 150 ° C. for 15 hours to form a completely circular mold portion as viewed from the light emission observation surface. A part of the diver was cut to form a stopper. Light emitting characteristics of the light emitting diode thus formed are shown in FIGS.

【００３９】（実施例２）本願発明の発光ダイオードを
図６の如くＬＥＤ表示器の１つであるディスプレイに利
用した。実施例１と同様にして形成させた発光ダイオー
ドを銅パターンを形成させたガラスエポキシ樹脂基板上
に、１６×１６のマトリックス状に配置させた。ガラス
エポキシ樹脂基板の導電性パターンと発光ダイオードと
は自動ハンダ実装装置を用いてハンダ付けを行った。Example 2 The light emitting diode of the present invention was used for a display which is one of the LED displays as shown in FIG. Light emitting diodes formed in the same manner as in Example 1 were arranged in a 16 × 16 matrix on a glass epoxy resin substrate on which a copper pattern was formed. The conductive pattern of the glass epoxy resin substrate and the light emitting diode were soldered using an automatic solder mounting device.

【００４０】全ての発光ダイオードは、突起部がＬＥＤ
表示器の上側に揃って向くようリード間を表示器の上下
方向に配置させた。次にフェノール樹脂によって形成さ
れた筐体内部に発光ダイオードが配置された基板を固定
させた。遮光部材は、筐体と一体成形させてある。発光
ダイオードの先端部を除いて筐体、発光ダイオード、基
板及び遮光部材の一部をピグメントにより黒色に着色し
たシリコンゴムによって充填させた。その後、常温、７
２時間でシリコンゴムを硬化させＬＥＤ表示器を形成さ
せた。このＬＥＤ表示器と、入力される表示データを一
時的に記憶させるＲＡＭ（Ｒａｎｄｏｍ、Ａｃｃｅｓ
ｓ、Ｍｅｍｏｒｙ）及びＲＡＭに記憶されるデータから
発光ダイオードを所定の明るさに点灯させるための階調
信号を演算する階調制御回路と階調制御回路の出力信号
でスイッチングされて発光ダイオードを点灯させるドラ
イバーとを備えたＣＰＵの駆動手段と、を電気的に接続
させてＬＥＤ表示装置を構成した。発光が比較的均一に
下方に向かっていることを確認した。特に、自動半田実
装装置を用いても上下方向における発光むらが極めて少
なかった。All the light emitting diodes have a protrusion of LED.
The leads were arranged in the vertical direction of the display so as to be aligned with the upper side of the display. Next, the substrate on which the light emitting diodes were arranged was fixed inside the housing formed of phenol resin. The light shielding member is formed integrally with the housing. Except for the tip of the light-emitting diode, the housing, the light-emitting diode, the substrate, and a part of the light-shielding member were filled with pigmented silicone rubber. Then, at room temperature, 7
The silicone rubber was cured in 2 hours to form an LED display. This LED display and a RAM (Random, Acces) for temporarily storing input display data
s, Memory) and data stored in the RAM, a gradation control circuit for calculating a gradation signal for lighting the light emitting diode to a predetermined brightness, and a light emitting diode which is switched by an output signal of the gradation control circuit to light the light emitting diode An LED display device was constructed by electrically connecting a CPU driving means having a driver for driving the CPU. It was confirmed that the light emission was relatively uniformly directed downward. In particular, even when an automatic solder mounting apparatus was used, uneven light emission in the vertical direction was extremely small.

【００４１】（実施例３）リード材料として、鉄入り銅
の長方形金属板を用いた。厚さ約０．７ｍｍの金属板を
打ち抜いた後、先端方向に加圧することでカップ及び絞
り部材である突起部を形成させた。これにＡｇメッキを
施すことによりダイバーによって接続されたリードを形
成させた。突起部は、リード間方向に指向特性を絞るも
のとして図４（Ａ）の如く、発光観測面側から見て平板
形状に形成されている。また、カップは発光観測面側か
ら見てトラック形状としてある。なお、突起部は、発光
素子を挟んで２カ所に設けてあり、電気的接続部材が越
える突起部は他方に比べて低くしている。Example 3 A rectangular metal plate of copper containing iron was used as a lead material. After punching a metal plate having a thickness of about 0.7 mm, the tip was pressed in the direction of the tip to form a projection serving as a cup and a throttle member. This was subjected to Ag plating to form leads connected by a diver. As shown in FIG. 4A, the protruding portion is formed in a flat plate shape as viewed from the light emission observation surface side so as to narrow the directivity in the direction between the leads. The cup has a track shape when viewed from the light emission observation surface side. Note that the protrusions are provided at two places with the light emitting element interposed therebetween, and the protrusions beyond which the electrical connection member extends are lower than the other.

【００４２】Ａｇメッキされたマウント・リードのカッ
プ内に２個の発光素子を配置させた。半導体基板上にＧ
ａＡｌＩｎＰを活性層として利用した発光素子をそれぞ
れＡｇペーストを用いてダイボンダーでダイボンドする
と共に電気的に接続させた。発光素子の他方の電極もそ
れぞれインナー・リードとＡｕ線によってワイヤーボン
ディングさせた。このように各発光素子が電気的に接続
されたリードの一部分に図４（Ａ）の如くモールド部材
を形成させた。ダイバーの一部分をカットしてストッパ
ーを形成させた。このようにして形成させた発光ダイオ
ードを基板上に形成させると絞り部材が設けられた方向
に指向特性が絞られた発光ダイオードとすることができ
る。Two light emitting elements were placed in the Ag-plated mount lead cup. G on a semiconductor substrate
Light emitting elements using aAlInP as an active layer were each die-bonded using an Ag paste by a die bonder and electrically connected. The other electrode of the light emitting element was also wire-bonded with the inner lead and the Au wire. As shown in FIG. 4A, a mold member was formed on a part of the lead to which each light emitting element was electrically connected. A part of the diver was cut to form a stopper. When the light emitting diode thus formed is formed on a substrate, a light emitting diode whose directivity is narrowed in a direction in which the diaphragm member is provided can be obtained.

【００４３】[0043]

【発明の効果】本願発明の請求項１及び請求項２記載の
構成とした発光ダイオードにより所望に発光特性を絞っ
た発光ダイオードを量産性良く形成させることができ
る。According to the first and second aspects of the present invention, it is possible to form a light emitting diode having a desired light emission characteristic with good mass productivity.

【００４４】本願発明の請求項３記載の構成とした発光
ダイオードとすることにより、実装時においても所望の
発光特性を比較的簡単に形成させることができる。With the light emitting diode having the structure described in claim 3 of the present invention, desired light emitting characteristics can be formed relatively easily even at the time of mounting.

【００４５】本願発明の請求項４記載の構成とした発光
ダイオードとすることにより、より効率の高い発光特性
を絞った発光ダイオードとすることができる。By adopting the light emitting diode having the structure described in claim 4 of the present invention, it is possible to obtain a more efficient light emitting diode with narrower light emitting characteristics.

【００４６】本願発明の請求項５記載の構成としたＬＥ
Ｄ表示器とすることにより、より安定した指向特性を有
するＬＥＤ表示器とすることができる。The LE having the configuration according to claim 5 of the present invention.
By using the D display, an LED display having more stable directional characteristics can be obtained.

【００４７】[0047]

【図面の簡単な説明】[Brief description of the drawings]

【図１】図１は、本願発明の発光ダイオードを発光観測
面の正面から示した模式図である。FIG. 1 is a schematic diagram showing a light emitting diode of the present invention from the front of a light emission observation surface.

【図２】図２は、図１に示した発光ダイオードのＸ−Ｘ
における模式断面図である。FIG. 2 is a cross-sectional view of the light emitting diode shown in FIG.
FIG.

【図３】図３（Ｘ）は、図１に示したＸ−Ｘ方向におけ
る指向特性を示すものであり、図３（Ｙ）は、図１に示
したＹ−Ｙ方向における指向特性を示すものである。FIG. 3 (X) shows the directional characteristics in the XX direction shown in FIG. 1, and FIG. 3 (Y) shows the directional characteristics in the YY direction shown in FIG. Things.

【図４】図４（Ａ）及び図４（Ｂ）は、それぞれ本願発
明の別の発光ダイオードを発光観測面の正面から示した
模式図である。FIGS. 4A and 4B are schematic diagrams each showing another light emitting diode of the present invention viewed from the front of a light emission observation surface.

【図５】図５は、実装時における発光ダイオードの動き
を説明するための模式的部分拡大図であり、図５（Ａ）
は、発光観測面側から見た模式図を示し、図５（Ｂ）
は、図５（Ａ）のＸ方向から見た模式的断面図である。
図５（Ｃ）は、図５（Ａ）のＹ方向から見た模式的断面
図を示す。FIG. 5 is a schematic partial enlarged view for explaining the movement of the light emitting diode during mounting, and FIG.
FIG. 5B is a schematic diagram viewed from the emission observation surface side, and FIG.
FIG. 6 is a schematic cross-sectional view as viewed from the X direction in FIG.
FIG. 5C is a schematic cross-sectional view seen from the Y direction in FIG.

【図６】図６は、本願発明のＬＥＤ表示器を示した模式
平面図である。FIG. 6 is a schematic plan view showing an LED display of the present invention.

【図７】図７は、図６に用いられるＬＥＤ表示装置のブ
ロック図である。FIG. 7 is a block diagram of the LED display device used in FIG. 6;

【図８】図８は、本願発明と比較のために示した発光ダ
イオードを発光観測面の正面から示した模式図である。FIG. 8 is a schematic diagram showing a light emitting diode shown for comparison with the present invention from the front of a light emission observation surface.

【図９】図９は、図８に示した本願発明と比較のために
示す発光ダイオードのＸ−Ｘにおける模式断面図であ
る。9 is a schematic cross-sectional view taken along line XX of the light emitting diode shown for comparison with the present invention shown in FIG. 8;

【図１０】図１０（Ｘ）は、図８に示したＸ−Ｘ方向に
おける指向特性を示すものであり、図１０（Ｙ）は、図
８に示したＹ−Ｙ方向における指向特性を示すものであ
る。FIG. 10 (X) shows the directional characteristics in the XX direction shown in FIG. 8, and FIG. 10 (Y) shows the directional characteristics in the YY direction shown in FIG. Things.

【符合の説明】[Description of sign]

１０１、４０１、４１１・・・絞り部材 １０２、４０２、５１１、８０２・・・第１のリード １０３、５１２、８０３・・・第２のリード １０４・・・導電性ワイヤーと接続された絞り部材の頂
点 １０５、４０５、８０５・・・発光素子 １０６、４０６、８０６・・・電気的接続部材である導
電性ワイヤー １０７、４０７、８０７・・・モールド部材 ４０３・・・ストッパー ４１２・・・角度が緩くなったカップ ５１３・・・発光ダイオードが実装される基板 ５１４、６１４・・・発光ダイオード ６１１・・・筐体 ６１２・・・遮光部材 ６１３・・・基板 ７０１・・・ＬＥＤ表示器 ７０２・・・ドライバー ７０３・・・階調制御手段 ７０４・・・画像データ記憶手段101, 401, 411: aperture member 102, 402, 511, 802: first lead 103, 512, 803: second lead 104: aperture member connected to a conductive wire Apex 105, 405, 805 ... Light emitting element 106, 406, 806 ... Conductive wire 107, 407, 807 which is an electrical connection member Mold member 403 ... Stopper 412 ... Angle is loose The cup 513 which has become a light-emitting diode is mounted on the substrate 514, 614 is a light-emitting diode 611 is a housing 612 is a light-shielding member 613 is a substrate 701 is an LED display 702. Driver 703: gradation control means 704: image data storage means

Claims (5)

【特許請求の範囲】[Claims] 【請求項１】並列に配置された第１及び第２のリード
と、該第１のリード先端にマウントされ電気的に接続さ
れた発光素子と、該発光素子と前記第２のリードと電気
的に接続する電気的接続部材と、を有する発光ダイオー
ドであって、 前記第１のリード先端上に発光素子からの光を第１及び
第２のリード間と垂直方向よりも第１及び第２のリード
間方向に絞られる絞り部材を有することを特徴とする発
光ダイオード。A first and a second lead arranged in parallel, a light emitting element mounted on and electrically connected to a tip of the first lead, and an electric connection between the light emitting element and the second lead. A light emitting diode having an electrical connection member connected to the first lead and the light from the light emitting element on the tip of the first lead. A light emitting diode comprising a diaphragm member that is narrowed in a direction between leads. 【請求項２】前記絞り部材は、発光観測面側から見て前
記第１及び第２のリードが上下方向に配置された場合に
おける第１のリード先端の発光素子を介して上方側及び
／又は下方側設けられた突起部である請求項１記載の発
光ダイオード。2. The diaphragm member according to claim 1, wherein the first and second leads are arranged vertically when viewed from a light emission observation surface side via a light emitting element at a tip end of the first lead. The light emitting diode according to claim 1, wherein the light emitting diode is a projection provided on a lower side. 【請求項３】前記第１及び第２のリード間と平行にリー
ドの一部が突出しているストッパーを有する請求項１記
載の発光ダイオード。3. The light emitting diode according to claim 1, further comprising a stopper having a part of the lead projecting in parallel with the space between the first and second leads. 【請求項４】前記第１のリード先端がカップ形状をなし
ており、前記絞り部材がカップと一体的に設けられてい
る請求項１記載の発光ダイオード4. The light emitting diode according to claim 1, wherein the tip of the first lead has a cup shape, and the aperture member is provided integrally with the cup. 【請求項５】請求項１記載の発光ダイオードを２以上基
板上に配置したＬＥＤ表示器。5. An LED display in which two or more light emitting diodes according to claim 1 are arranged on a substrate.
JP34364496A 1996-12-24 1996-12-24 Luminous diode and led display using it Pending JPH10190064A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34364496A JPH10190064A (en) 1996-12-24 1996-12-24 Luminous diode and led display using it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34364496A JPH10190064A (en) 1996-12-24 1996-12-24 Luminous diode and led display using it

Publications (1)

Publication Number Publication Date
JPH10190064A true JPH10190064A (en) 1998-07-21

Family

ID=18363129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34364496A Pending JPH10190064A (en) 1996-12-24 1996-12-24 Luminous diode and led display using it

Country Status (1)

Country Link
JP (1) JPH10190064A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299698A (en) * 2001-03-30 2002-10-11 Sumitomo Electric Ind Ltd Light-emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299698A (en) * 2001-03-30 2002-10-11 Sumitomo Electric Ind Ltd Light-emitting device

Similar Documents

Publication Publication Date Title
US10903397B2 (en) Light emitting device package
US8546838B2 (en) Light emitting device package and method for manufacturing the same
US8772794B2 (en) Light emitting device package having LED disposed in leadframe cavities
CN104241486B (en) Light emitting semiconductor device and its manufacturing method
US20060001035A1 (en) Light emitting element and method of making same
US8362500B2 (en) Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting system
KR102408618B1 (en) Light emitting device package and lighting apparatus including the same
US20110089440A1 (en) Light emitting device and light emitting device package having the same
US9768363B2 (en) Light emitting device module
KR20190074067A (en) Light emitting device package
JP2014224247A (en) Phosphors and light emitting device package including the same
KR101707532B1 (en) Light Emitting Device
JP2956594B2 (en) Light emitting diode and display device using the same
KR101746002B1 (en) Light emitting device
JPH104216A (en) Optical semiconductor device and light-emitting device using thereof
KR100407773B1 (en) GaN LIGHT EMITTING DEVICE AND THE PACKAGE THEREOF
JPH10190064A (en) Luminous diode and led display using it
JP2828142B2 (en) LED lamp and method of forming the same
KR102507444B1 (en) Light emitting device and display device including the same
KR20140097899A (en) Light emitting device
KR101883342B1 (en) Light emitting device package
KR20130040009A (en) Light emitting device package
KR20120088985A (en) Light Emitting device
KR102372022B1 (en) light emitting device
KR20120099173A (en) Light emitting device and manufacturing method for light emitting device