JPH10189678A - Alignment accuracy detecting method, device therefor and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a means by which a resist pattern alignment deviation value is measured accurately in semiconductor manufacturing. SOLUTION: A detecting pattern which detects a position alignment deviation by providing an electric resistor Rn made of a contact layer between lower layer metal wiring 10 and upper layer metal wiring 11 is constituted at a window part 13 opened through an inter layer insulating film 12 and an alignment accuracy detecting method and its device which detect an alignment deviation value by measuring the resistance Rn are constituted. A calibrating means is provided between the lower layer metal wiring 10 and the upper layer metal wiring 11 of this alignment accuracy detecting device, correction of the alignment deviation value is added based upon the output, and an aligning accuracy detecting method and device therefore having a higher detecting accuracy are constituted. Further plural detecting patterns are formed and a detecting sensitivity is increased by junctioning those in parallel. And further detecting patterns are formed in two directions crossing orthogonally so that position deviations in any directions may be detect.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an alignment accuracy detection method and an alignment accuracy detection device for detecting an amount of misalignment during resist patterning in a semiconductor device manufacturing process, and a method of manufacturing the same.

[0002]

2. Description of the Related Art In the process of manufacturing a semiconductor device, it is important to secure alignment accuracy in resist patterning, which is an important factor for improving product yield. Accordingly, it is believed that the importance of the technology relating to the alignment will further increase.

[0003] A conventional method for detecting the positioning accuracy will be described with reference to FIGS. FIGS. 12A and 12B are views showing a conventional means for detecting the accuracy of registration at the time of resist patterning. FIG. 12A is a front view thereof, and FIG. 12B is a view showing A ₃ in FIG. it is a cross-sectional side view of a -A _3. FIG. 13 is a diagram for explaining the detection accuracy of the detection means shown in FIG.

Conventionally, as a means for detecting the positioning accuracy at the time of resist patterning, an evaluation circuit section 100 as shown in FIG. 12 is formed by etching an upper layer metal wiring 101 and an interlayer insulating film 102 made of SiO ₂ by resist patterning and etching. It has been manufactured and used in the process. As shown in the figure, the upper metal wiring 101 constituting the detecting means has a square shape, and an interlayer insulating film 102 is provided so as to surround the periphery thereof at a predetermined interval. Also,
The upper metal wiring 101 is stacked on the lower metal wiring 103 via an adhesion layer 104.

The measurement of the amount of misalignment between the upper metal wiring 101 and the interlayer insulating film 102 using the evaluation circuit section 100 is performed, for example, by using a CCD (Charge Couple).
dDevice) Photographed from above by an image sensor or the like,
This has been done by processing the image data obtained thereby. Upper metal wiring 1 shown in FIG.
As can be seen from the shapes of the interlayer insulating film 102 and the interlayer insulating film 102, the amount of misalignment of the center position can be measured separately for horizontal and vertical components.

However, the above-described detection method has a problem that the detection accuracy is significantly reduced when the pattern of the detection unit is rough. For example, as shown in FIG.
In the case of 1 vapor deposition, minute irregularities are generated on the surface due to Al grains, and this is transferred to the surface of the interlayer insulating film 102 which is a transparent film by a lens effect. In this state, when photographing with a CCD from above, the outline 1 of the interlayer insulating film 102 is obtained.
05 became rough, and the accuracy of position detection was reduced. In addition, since the limit of the measurement accuracy is determined by the optical resolution performance of the optical microscope, it is assumed that it is difficult to accurately cope with further miniaturization technology in the future of semiconductor manufacturing.

[0007]

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to improve the accuracy of detecting misalignment during resist patterning accompanying miniaturization of semiconductor devices.
An object of the present invention is to provide an alignment accuracy detection method and an alignment accuracy detection device used therefor, and a method of manufacturing the same.

[0008]

SUMMARY OF THE INVENTION The present invention has been made in consideration of the above problems, and has been made in consideration of the accuracy of resist patterning alignment in the manufacture of a semiconductor device. An alignment accuracy detection method for detecting the amount of alignment deviation by measuring a resistance value of an electric resistance portion of an alignment pattern formed between the upper layer metal of the semiconductor device and the alignment accuracy detection method described above. Provided is a positioning accuracy detection method to which the amount of misalignment is calibrated based on an output of a calibrating means formed between a wiring and a lower metal wiring.

In detecting the positioning accuracy of resist patterning in the manufacture of a semiconductor device, a window having a predetermined shape is provided in an interlayer insulating film of a semiconductor device, and an upper metal wiring and a lower metal wiring are sandwiched between the interlayer insulating film. And a positioning accuracy detection device that forms an electric resistance portion by providing an adhesion layer with a member having a predetermined specific resistance between the upper metal wiring and the lower metal wiring of the window portion, and The present invention provides an alignment accuracy detecting apparatus in which a calibration means is added between an upper metal wiring and a lower metal wiring.

The window of the positioning accuracy detecting device is a triangle having an apex in the direction of the detected positional deviation. In addition, a rectangular calibration window having a pair of sides parallel to the direction of the misalignment to be detected is provided. Further, the window portion is formed of a plurality of triangles having an apex angle in a direction of misalignment to be detected, and an electric resistance of an adhesion layer provided in each window portion is a positioning accuracy detection device connected in series. .

The window of the positioning accuracy detecting device is a triangle having an apex angle independently in each of two orthogonally detected misalignment directions. In addition, a rectangular calibration window having a pair of sides parallel to each of the misalignment directions orthogonal thereto is provided. Further, the window portion is composed of a plurality of triangles having an apex angle in a direction of misalignment to be detected, and an electric resistance of an adhesion layer provided in each window portion constitutes an alignment accuracy detection device connected in series. I do.

A first step of forming a layer to be a lower metal wiring, a second step of forming an interlayer insulating film, and a method of detecting a positioning accuracy of resist patterning in the manufacture of a semiconductor device. An alignment accuracy detection apparatus comprising: a third step of forming a window in the film; a fourth step of forming a layer to be an adhesion layer and an upper metal wiring; and a fifth step of forming the upper metal wiring. The above problem is solved by the manufacturing method of (1).

According to the positioning accuracy detecting method, the positioning accuracy detecting device, and the manufacturing method of the present invention, a minute misalignment in resist patterning can be detected with high accuracy, and therefore, a further fine structure can be obtained. It is possible to manufacture a semiconductor device having a good yield.

[0014]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS.

FIGS. 1A and 1B are views showing portions of a misalignment evaluation pattern on a wafer 1, wherein FIG. 1A is a front view of a wafer 1 on which semiconductor circuits are formed, and FIG.
It is an enlarged view for a shot. Here, one shot refers to a region to be patterned by one exposure by the exposure device. In one shot, there are a real circuit pattern portion 3, a scribe line 4 separating the real circuit pattern portion 3, and an evaluation pattern portion 5 for evaluating the amount of misalignment.
In order to measure the amount of misalignment at the center and the periphery in the shot, the evaluation pattern unit 5 is arranged at the center and four corners of the shot as shown in FIG.

First, the configuration and operation of the first embodiment of the present invention will be described with reference to FIGS.
Here, FIG. 2 is a diagram showing a first embodiment of a positioning pattern (hereinafter simply referred to as “detection pattern”) in the evaluation pattern unit 5 according to the present invention.
2A is a plan view thereof, and FIG. 2B is an equivalent circuit of FIG. FIG. 3A is a cross-sectional view of the first embodiment taken along line A ₁ -A ₁ in FIG. 2A, and FIG.
Is a perspective view of a B ₂ sites of FIG. 3 (a). FIG. 4 is a diagram for explaining the relationship between the upper metal wiring of the detection pattern, the arrangement of the windows, and the electrical resistance, and FIG.
FIG. 1B shows a first example of the arrangement of the upper metal wiring and the window, and FIG. 2B shows a second example. FIG. 7C shows the relationship between the amount of misalignment and the electrical resistance.

FIG. 2 shows a detection pattern of misalignment.
As shown in FIG. 3A, a window 13 and holes for output terminals 14a and 14b are formed in the interlayer insulating film 12 and are formed in the evaluation pattern section 5, and the lower metal wiring 10 is exposed in these holes. An upper metal wiring 11 is provided above the window 13, and an adhesion layer (reference numeral 15 in FIG. 3) having a specific resistivity is provided between the window 13 and the upper metal wiring 11. Thereby, the resistor Rn is formed. The window 13 and the output terminal 14 a, and the upper metal wiring 11 and the output terminal 14 b are electrically connected via the adhesion layer 15. The window 13 has a triangular shape, and detects a displacement in the direction of the vertex of the triangle. Output terminal 1
4a and 14b are portions to which a terminal of a tester is applied when measuring the amount of misalignment, and has a large area.

FIG. 2B shows an equivalent circuit of the above-described detection pattern, in which a resistance Rn by an adhesion layer 15 is provided between an output terminal 14a indicated by Q + and an output terminal 14b indicated by Q-. Since the resistance Rn is determined according to the amount of misalignment, the amount of misalignment can be detected by measuring the value of the resistor Rn. Note that the directions in which the displacement can be detected are the left and right directions indicated by the arrow X in FIG. The resistance R is a resistance value when the adhesion layer 15 is formed at the bottom of the triangle of the window 13.

FIG. 3A shows the evaluation pattern section 5 shown in FIG.
FIG. 2A is a cross-sectional view taken along line A ₁ -A ₁ shown in FIG.
The cross-sectional configuration of the window 13, the output terminal 14a, and the adhesion layer 15 forming the resistor Rn can be seen. FIG. 3B is a perspective view of a region indicated by B ₂ in FIG.
n is well illustrated. The interlayer insulating film 12 is made of Si
O ₂ , and the adhesion layer 15 is made of Ti / TiON /
It is formed of a multi-layer metal or alloy such as Ti.

Next, a change in the amount of misalignment and a change in the electric resistance will be described with reference to FIG. As shown in FIG. 4, the window 13 has a triangular shape, and when the upper metal wiring 11 is misaligned with respect to the interlayer insulating film 12 in the direction of detecting the misalignment, the upper metal wiring 11 and the window 1 are displaced.
The position overlapping with 3 moves. FIG. 4 (a) shows a state shifted from the position of the shift amount “0” to the right side.
(B) shows a state shifted to the left side. Due to this displacement, the contact area S between the upper metal wiring 11 and the interlayer insulating film 12 is increased.
n changes. That is, the contact area in FIGS. 4 (a) is S _1, the contact area of the positional deviation amount "0" is smaller than S _0, whereas, the contact area in FIG. 4 (b) is S _2, shift The contact area at the position of the amount “0” is larger than S ₀ .

As described above, there is a correlation between the amount of misalignment and the contact area Sn. The contact area Sn and the resistance R between the upper metal wiring 11 and the window 13
Since the relationship with n is uniquely determined, the amount of misalignment is determined by setting the resistance Rn to, for example, a voltage,
It can be obtained by converting to current and measuring.

Next, the relationship between the contact area Sn and the resistance Rn will be described. The relationship between the contact area Sn and the resistance Rn can be expressed by the following equation. Rn = (D / Sn) ρ [Ω · m] (1) = α / Sn [Ω · m] (2) where Rn: electric resistance in case of misalignment n Sn: case of misalignment n The contact area between the lower metal wiring 10 and the adhesion layer 15 is as follows: D: the thickness of the adhesion layer 15 ρ: the specific resistance of the adhesion layer 15 α: D / ρ.

That is, since D and ρ are constants independent of misalignment, equation (1) can be expressed as equation (2), and the contact area Sn and the electrical resistance Rn are in inverse proportion. I understand. This relationship is shown in FIG. Therefore, by detecting this electric resistance Rn and comparing it with the reference electric resistance R ₀ , the direction of the misalignment, that is, FIG.
It is possible to obtain either the left or right direction indicated by the arrow X in FIG.

The above-described detection pattern is for detecting a misalignment in one direction, and as shown in FIGS. 5A and 5B, this pattern is provided in each of two orthogonal directions. Thus, the misalignment in any direction on the plane can be obtained by decomposing into orthogonal components.

FIG. 6 is a diagram showing a second embodiment of the detection pattern in the evaluation pattern section 5, and shows an upper metal wiring 1 for detecting misalignment in the X direction.
1a and a window 13a, and an evaluation pattern section having the same pattern as an upper layer metal wiring 11b and a window 13b, which are provided orthogonal to the pattern, and which are configured to detect misalignment in the Y direction. 5 is provided. The output terminal 14a is common to both, and has output terminals 14b ₁ and 14b ₂ for outputting the amount of misalignment in each of the X direction and the Y direction.

Next, with reference to FIG. 7, a description will be given of a third embodiment of the present invention relating to the improvement of the detection accuracy of the misalignment. FIG. 7A is a plan view of this embodiment, in which windows 13a to 13f have resistors Ra to R, respectively.
f, and these are connected in series. FIG.
FIG. 2B is a cross-sectional view taken along line A ₂ -A ₂ in FIG. 2A, in which the adhesion layers 15 a to 15 f
f is formed. FIG. 7C shows this equivalent circuit, in which the resistors Ra to Rf formed corresponding to the contact areas of the windows 13a to 13f are connected in series.

Assuming that the number of resistance stages is q, the output terminal 1
The resistance Rn at the time of misalignment n measured between 4a and 14b is given by equation (3). Rn = R ₀ × q + ΔRn × q (3) where R ₀ is the resistance value of each contact portion when there is no misalignment, and ΔRn is the resistance value of each contact portion generated by misalignment. The amount of change. From equation (3), it can be seen that the amount of change in the resistance value of each contact portion caused by misalignment is amplified and detected by a factor of q,
It can be seen that higher detection accuracy can be obtained.

Next, a fourth embodiment of the present invention having means for calibrating the detection of misregistration will be described with reference to FIG.
This will be described with reference to FIG.

The misalignment detection accuracy is caused not only by the line width variation of the upper metal wiring 11 but also by various other manufacturing variations. For example, interlayer insulating film 1
2 are variations in processing of the window 13, variations in the specific resistance ρ of the adhesion layer 15 due to a change in film type, and variations in the thickness D of the adhesion layer 15. These also change the proportionality constant α shown in Expression (2), which leads to a decrease in detection accuracy. In the present embodiment, a calibration circuit is formed in the evaluation pattern section 5 at the same time as the detection pattern to further improve the detection accuracy.

FIG. 8 shows a pattern in which a lateral calibration pattern is provided in the pattern shown in FIG. 6 for detecting misalignment in both the horizontal (X) direction and the vertical (Y) direction. It goes without saying that a vertical calibration pattern may be provided at the same time.

A calibration window 16 is provided in the interlayer insulating film 12,
Adhesion layer 1 between upper layer metal wiring 11c and interlayer insulating film 12
5 is provided to obtain a predetermined resistance value. Lower metallization layers 10 of the calibration window 16 is not connected to the output terminal 14a, detects an electrical amount for a given resistance value between the output terminal 14a and output terminal 14b _3. The other calibrations are the same as those already described as the second embodiment with reference to FIG. 6, and the description here will be omitted.

Next, the operation of the calibration will be described. Assuming that the contact area obtained from the window 13a is S ₀ when the misalignment amount is zero, the contact area obtained from the calibration window 16 is always S _0.
The length M in the vertical direction is set and manufactured. In other words, since the calibration window 16 is a quadrilateral having two upper and lower sides parallel to each other, any deviation of the alignment in this direction does not cause a change in the electrical resistance at this position, and the alignment is performed. The contact area at the window 13a when the shift amount is zero is determined. That is, it can be used as a reference for patterning with the amount of misalignment being zero.

Therefore, the electric resistance obtained by the calibration circuit of the calibration window 16 is compared with the electric resistance formed by the window 13a, and the pattern position in the horizontal (X) direction is determined according to the result. Can be. Also, by providing a similar calibration circuit in the vertical (Y) direction, it is obvious that the pattern position in the vertical (Y) direction can be determined by comparing with the electrical resistance formed by the window 13b. .

Even if the above-described variation in the manufacturing process occurs, a similar change in electric resistance occurs in the calibration circuit. Therefore, in the method of the present invention for controlling misalignment using the difference in electric resistance, This effect is eliminated, enabling highly accurate patterning alignment.
It forms a major feature of the present invention.

Next, a description will be given, with reference to FIG. 9 and FIG. 10, of an improvement in the detection error of the registration error by increasing the change of the electric resistance per unit displacement amount.

In equation (2), it has already been described that the electrical resistance Rn and the contact area Sn between the lower metal wiring 10 and the adhesion layer 15 are in inverse proportion, but in the state of FIG. Sn in (2) is given by equation (4). ^{Sn = ln 2 · tan (θ} / 2) - (ln-L) 2 · tan (θ / 2) = (2ln-L) · L · tan (θ / 2) (4) where, ln is aligned It represents the positional relationship between the upper metal wiring 11 and the window 13 in the shift state n, and is the distance from the vertex of the isosceles triangle of the window 13 to the left end of the upper metal wiring 11. Therefore, a change in the shift amount corresponds to this change in ln. From equation (4), it can be seen that L can be increased in the range of θ or ln in order to increase the change ΔSn in electrical resistance per unit deviation Δln.

If the line width L of the upper metal wiring 11 fluctuates, the contact area Sn changes. As a result, the accuracy of misalignment detection is reduced. Can be improved. That is, as compared with the case where the apex angle θ is small, the rate of change of the contact area per unit shift amount becomes large, and the change in the electric resistance can be detected with high sensitivity.

Next, the case where L ₀ is increased will be described with reference to FIG. L ₀ in the figure is a width of the upper metallization layers 11, to a value larger than the maximum value of ln shown in FIG. The triangle Sn at this time is represented by Expression (5). Sn = ln ² tan (θ / 2) (5) Here, when the equation (5) is differentiated by ln and the equation (4) is differentiated by ln, the difference is 2 (ln−L).
· Tan (θ / 2) next, since the formula (4) L is smaller than ln, 2 (ln-L) · tan (θ / 2) is always positive, the detection sensitivity was increased L ₀ Figure It can be seen that the detection pattern shown in FIG. 10 is superior.

Next, a method of creating the detection pattern will be described with reference to FIG. The drawing of FIG. 2 A ₁ -
It is a cross-sectional view in each process of manufacturing the A ₁ line.

First, the metal to be the lower metal wiring 10 is
For example, vapor deposition is performed by a sputtering method [FIG.
(A)]. No etching is performed on this portion.
Next, for example, SiO ₂ to be an interlayer insulating film 12 is formed by vapor phase growth (CVD) (FIG. 11B). Thereafter, the portions of the interlayer insulating film 12 that will be the windows 13 and the output terminals 14a are patterned by a photolithography process, etched in an etching process, and processed into a desired shape [FIG. 11 (c)]. Next, a metal to be the upper metal wiring 11 is deposited by, for example, a sputtering method (FIG. 11D). The adhesion layer 15 is simultaneously formed in this step. Finally, the upper metal wiring 11 is patterned by a photolithography process, etched in an etching process, and processed into a desired wiring shape (FIG. 11E).

These series of processes are performed simultaneously with the process of creating an actual circuit. In addition, since the metal serving as the lower metal wiring 10 in the first step can be a silicon wafer that has been subjected to implantation, it is possible to produce and evaluate misalignment detection patterns even in the initial step of semiconductor circuit manufacturing. It is.

[0042]

As described above, according to the method for detecting misalignment using the detection pattern of the present invention, the misalignment during resist patterning is measured by measuring the resistance value formed between the electrodes. Can be accurately detected.

Further, by performing correction using the calibration pattern, a stable amount of misalignment can be measured without being affected at all by manufacturing such as variations in line width and film thickness, changes in film quality, and the like. The reliability is dramatically improved.

Further, by forming a detection pattern in a plurality of stages of serial circuits, the amount of change in resistance due to misalignment can be amplified and measured. The influence of the electric noise can be effectively reduced, and the reliability of the deviation detection is dramatically improved.

Since the main equipment required for the resistance measurement is only a tester for measuring the electric resistance, the large measuring system used for the conventional displacement detection is not required, and the alignment is performed with a simple system configuration. A shift can be detected. Further, since the measurement of the electric resistance can be performed in a short time, the cost of the measuring instrument and the running cost can be significantly reduced.

Since the sensitivity (accuracy) of the electrical resistance measurement can be freely adjusted, the accuracy of detecting the amount of misalignment can be easily improved, and the method can be used as a misalignment evaluation method corresponding to a further miniaturization technology in the future semiconductor manufacturing. Great effect.

[Brief description of the drawings]

FIG. 1 is a diagram showing an evaluation pattern portion on a wafer, wherein (a) is a front view of a wafer on which a semiconductor circuit is formed, and (b) is an enlarged view of one shot of the semiconductor circuit.

FIG. 2 is a diagram showing a first embodiment of a positioning pattern in an evaluation pattern unit according to the present invention,
(A) is a plan view, and (b) is an equivalent circuit of (a).

FIG. 3 is a first embodiment example, in which FIG.
FIG. 2A is a cross-sectional view taken along line A ₁ -A ₁ , and FIG. 2B is a perspective view of a portion B ₂ in FIG.

FIGS. 4A and 4B are diagrams for explaining the relationship between the arrangement of the upper metal wiring and the window and the electrical resistance of the alignment pattern, wherein FIG. 4A is a first diagram illustrating the arrangement of the upper metal wiring and the window; (B) is a second example. (C) is a diagram showing the relationship between the amount of misalignment and the electrical resistance.

FIG. 5A is a positioning pattern for detecting a horizontal displacement, and FIG. 5B is a positioning pattern for detecting a vertical displacement.

FIG. 6 is a diagram showing a second embodiment of the alignment pattern in the evaluation pattern section according to the present invention.

FIG. 7 is a diagram showing a third embodiment of the alignment pattern in the evaluation pattern section according to the present invention,
(A) is a plan view, (b) is A in (a)
Is a cross-sectional side view of a ₂ -A ₂ line, (c) is an equivalent circuit.

FIG. 8 is a view showing a fourth embodiment of an alignment pattern according to the present invention.

FIG. 9 is a diagram for explaining the detection accuracy of an alignment pattern according to the present invention.

FIG. 10 is a diagram for describing an improvement in the misalignment detection sensitivity.

FIG. 11 is a diagram for explaining a method for creating an alignment pattern according to the present invention.

12A and 12B are diagrams showing a conventional means for detecting the accuracy of registration at the time of resist patterning, wherein FIG. 12A is a front view thereof, and FIG. 12B is a view on the line A ₃ -A ₃ in FIG. It is sectional side view.

FIG. 13 is a diagram for explaining the detection accuracy of the detection means of FIG. 12;

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Wafer, 2 ... Semiconductor circuit, 3 ... Actual circuit pattern part,
4: scribe line, 5: evaluation pattern part, 10, 1
03: Lower metal wiring, 11, 11a to 11c, 101
... upper metal wiring, 12, 102 ... interlayer insulating film, 13,
13a~13f ... window _{portion, 14a, 14b, 14b 1,} 14
b _2, 14b ₃ ... output terminal, 15,15a~15f, 104
... Adhesion layer, 16 ... Calibration window, 100 ... Evaluation circuit, 1
05 ... Contour

Claims (11)

[Claims] In detecting a positioning accuracy of resist patterning in the manufacture of a semiconductor device, a resistance value of an electric resistance portion of a positioning pattern formed between an upper metal wiring and a lower metal wiring of the semiconductor device is measured. A method for detecting the amount of misalignment by using the method. 2. A method for detecting the accuracy of resist patterning alignment in the manufacture of a semiconductor device, comprising measuring a resistance value of an electrical resistance portion of an alignment pattern formed between an upper metal wiring and a lower metal wiring of the semiconductor device. Detecting the amount of misalignment, and calibrating the amount of misalignment based on the output of the calibration means formed between the upper metal wiring and the lower metal wiring of the semiconductor device. Accuracy detection method. 3. A method for detecting the accuracy of resist patterning alignment in the manufacture of a semiconductor device, comprising the steps of: providing a window of a predetermined shape in an interlayer insulating film of a semiconductor device; And a wiring having a predetermined specific resistance between the upper metal wiring and the lower metal wiring in the window to form an electric resistance portion. Accuracy detection device. 4. A method for detecting the positioning accuracy of resist patterning in the manufacture of a semiconductor device, comprising the steps of: providing a window of a predetermined shape in an interlayer insulating film of a semiconductor device; And an electrical resistance portion formed by providing a contact layer between the upper metal wiring and the lower metal wiring in the window portion with a member having a predetermined specific resistance, and further comprising the upper metal wiring and the lower layer. A positioning accuracy detecting device, wherein a calibration means is provided between the device and a metal wiring. 5. The alignment accuracy detecting device according to claim 3, wherein the window is a triangle having an apex angle in a direction of the positional deviation to be detected. 6. A calibration window having a triangular shape having an apex angle in a direction of misalignment to be detected and having a pair of sides parallel to the direction of misalignment to be detected. Characterized by the fact that
The alignment accuracy detection device according to claim 4. 7. The positioning accuracy detecting device according to claim 5, wherein the window portion is formed of a plurality of triangles having a vertex angle in a direction of a position shift to be detected, and is provided in each window portion. The electric resistance of the contact layer to be used is connected in series, the positioning accuracy detection device characterized by the above-mentioned. 8. The positioning accuracy according to claim 3, wherein the window is a triangle having an apex angle independently of each of two orthogonal misalignment directions to be detected. Detection device. 9. The window portion is a triangle having an apex angle independently in each of two orthogonal misalignment directions to be detected, and is parallel to each orthogonal misalignment direction. The positioning accuracy detecting device according to claim 4, wherein a square calibration window having a pair of sides is provided. 10. The positioning accuracy detecting device according to claim 8, wherein said window portion is formed of a plurality of triangles having a vertex angle in a direction of a position shift to be detected, and is provided in each window portion. The electric resistance of the contact layer to be provided is connected in series, the alignment accuracy detecting device. 11. A device for detecting the positioning accuracy of resist patterning in the manufacture of a semiconductor device, wherein: a first step of forming a layer to be a lower metal wiring; a second step of forming an interlayer insulating film; A third step of forming a window in the interlayer insulating film; a fourth step of forming a layer to be an adhesion layer and an upper metal wiring; and a fifth step of forming the upper metal wiring. Manufacturing method of an alignment accuracy detecting device.