JPH10186412A - Active matrix liquid crystal display device and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an active matrix liquid crystal display device that can improve display quality by preventing generation of raggedness on a surface of a pixel electrode in spite of being an active matrix substrate of a color filter layer-built-in type, and provide a production method therefor. SOLUTION: In the active matrix substrate, a TFT, color filter layers 13R, 13G, 13B formed by an ink jet method and a pixel electrode 4 are formed on a transparent substrate 20 is this order from lower layer side. The pixel electrode 4 is composed of a sputtering ITO film 4A on the lower layer side and a coated ITO film 4B on the upper layer side and is conductivity connected with a repeating electrode 49 via a contact hole 131 having a large aspect ratio of the color filter layers. Since the coated ITO film 4B has an excellent level difference coating property, the surface thereof has no raggedness.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix liquid crystal display device having a thin film switching element comprising a thin film transistor or a diode and a pixel electrode conductively connected to the thin film switching element for each pixel region formed in a matrix. , And a method of manufacturing the same. More specifically, the present invention relates to a technique for incorporating a color filter in an active matrix substrate of an active matrix liquid crystal display device.

[0002]

2. Description of the Related Art In an active matrix liquid crystal display device, a thin film transistor (hereinafter, referred to as a thin film transistor) is used as a thin film switching element for pixel switching.
It is called TFT. ) Or MIM (Metal-Insulator-Meta)
l) Regardless of which diode is used, liquid crystal sealed between two transparent substrates is driven between a counter electrode formed on each transparent substrate and a pixel electrode. Further, as shown in FIG. 13, in the active matrix type color liquid crystal display device 1, two transparent substrates 10 and 20 in which a liquid crystal 30 is sealed are provided.
The color filter layer 13 composed of three colored layers of red (R), green (G), and blue (B) is provided on the transparent substrate 10 side.
A color filter 130 is constituted by R, 13G, and 13B. Three color filter layers 13R, 13
A black matrix 120 for shielding the gap between colors is formed between G and 13B, and a transparent conductive film serving as the counter electrode 11 is formed on the color filter layers 13R, 13G and 13B. When manufacturing the color filter 130, after forming a light-shielding film made of a metal such as chromium on the transparent substrate 10, the light-shielding film is patterned into a lattice shape by using a known photolithography technique, thereby forming a black matrix 120. . Next, the color filter layer 1
The color filters 3R, 13G, and 13B are formed. Typical methods for forming the color filter layers 13R, 13G, and 13B include a dyeing method and a pigment dispersion method. The dyeing method is a method in which a resist serving as a dyeing base material is applied, patterned, and then immersed in a dyeing solution to dye the resist. The pigment dispersion method is a method of applying and patterning a colored pigment resist in advance.

On the other hand, a pixel region 2 is defined by a data line 31 and a scanning line 15 on a transparent substrate 20, and the supply of a signal voltage to a pixel electrode 4 is controlled for each of the pixel regions 2. A thin film switching element such as a TFT 40 is formed. Therefore, when manufacturing the color liquid crystal display device 1, each of the color filter layers 13R, 13G,
13B and the transparent substrate 1 so that each pixel region 2 faces each other.
Attach 0, 20.

[0004] However, in the manufacturing process of the color liquid crystal display device 1, there is a limit in improving the bonding accuracy of the transparent substrates 10 and 20, while the color filter layers 13R and 13R are limited.
If there is a shift between G and 13B and each pixel area 2, display of color information will be disturbed. Therefore, conventionally, the pixel electrode 21 has to be formed small in view of the area of the pixel region 2 so that the display of the color information is not disturbed even if there is such a shift. The reduction of 2 hinders the display of high quality.

Accordingly, the present applicant has filed Japanese Patent Application No. 5-8980.
No. 9 (Japanese Patent Application Laid-Open No. 6-301057), FIG.
No. 4 proposed an active matrix substrate integrated with a color filter. In this active matrix substrate, thin film switching elements such as TFTs 40 and color filter layers 13R and 13R are placed on a transparent substrate 20 from the lower layer side.
G, 13B (color filter 130), and pixel electrode 4 are stacked in this order. That is, after forming the color filter layers 13R, 13G, and 13B on the upper layer side of the TFT 40, these color filter layers 13R, 13G, and 1B are formed.
The pixel electrode 4 is connected to the T through the contact hole 131 of 3B.
It is conductively connected to the drain region 46 of the FT 40. According to this structure, the transparent substrate provided with the counter electrode,
When bonding the transparent substrate 10 constituting the active matrix substrate, the color filter layers 13R, 13G,
13B and each pixel region 2 do not shift. Therefore,
Even if the pixel electrode 4 is maximized, the display of color information will not be disturbed.
High quality display can be performed.

[0006]

However, FIG.
Unlike the structure in which the pixel electrode 4 is conductively connected to the drain region 46 of the TFT 40 only through the contact hole 481 of the interlayer insulating film 48 made of a silicon oxide film or the like, the active matrix substrate having the structure shown in FIG.
When viewed from the perspective, the thick color filter layers 13R, 13G, 13
It is necessary to electrically connect the pixel electrode 4 to the drain region 46 of the TFT 40 even through the contact hole 131 formed in B. That is, the color filter layers 13R, 13R
The contact holes 131 formed in the color filter layers 13R, 13G, and 13B have an aspect ratio of G and 13B, for example, having a thickness of 0.5 μm to 3 μm, which is thicker than a commonly used interlayer insulating film. large.
Therefore, when the pixel electrode 4 is formed, the ITO film (Indium T
When in Oxide) is formed by the sputtering method, the unevenness on the lower layer side such as the concave shape of the contact hole 131 is directly reflected on the surface of the pixel electrode 4, and a large step 400 is formed. The presence of such a step 400 is not preferable because rubbing becomes unstable and the alignment of the liquid crystal is disturbed. In addition, the presence of the step 400 causes a reduction in display quality due to the occurrence of a reverse tilt domain or the like. Further, there is a problem that the pixel electrode 4 is disconnected due to a step of the contact hole 131, and the conductive connection between the drain region 46 and the pixel electrode 4 becomes insufficient.

[0007] In view of the above problems, an object of the present invention is to provide:
Despite being a color filter integrated type active matrix substrate, by preventing the occurrence of irregularities on the surface of the pixel electrode, it is possible to prevent the disorder of liquid crystal alignment and the occurrence of reverse tilt domains, etc., and to improve display quality. And a method of manufacturing the same.

[0008]

According to the present invention, in order to solve the above-mentioned problems, according to the present invention, a thin film switching element comprising a thin film transistor or a diode, and a conductive film provided to the thin film switching element for each pixel region formed in a matrix on a substrate. In the active matrix liquid crystal display device having a pixel electrode to be connected, the thin film switching element, the color filter layer, and the pixel electrode are stacked in this order from the lower layer side on the substrate, and the pixel electrode is A conductive transparent coating film which is conductively connected to the thin film switching element via a contact hole formed in the color filter layer is provided above the color filter layer.

In the present invention, since the color filter layer is provided on the side of the active matrix substrate, the substrate provided with the counter electrode is bonded to the active matrix substrate (the substrate on which the pixel electrodes are formed). In this case, no shift occurs between the color filter layer and the pixel region.
Therefore, even if the pixel electrode is expanded to the maximum, the display of the color information is not disturbed and the pixel electrode can be expanded.
High-quality display can be performed, for example, the aperture ratio in the pixel region can be improved. In addition, since the substrate provided with the counter electrode does not have a pattern requiring precision, alignment work is not required when bonding this substrate to the active matrix substrate, and the cost of the bonding step can be reduced.

Here, the pixel electrode is formed on the upper layer of the color filter layer for driving the liquid crystal. When this pixel electrode is formed of an ITO film or the like, if a sputtering method is used, FIG. As described above, the unevenness on the lower layer side such as the concave shape of the contact hole is directly reflected on the surface of the pixel electrode, and a large step is formed. However, in the present invention, when forming a pixel electrode, a conductive transparent coating film is formed by performing a coating film forming method such as a spin coating method, a dipping method, or a printing method. Since the conductive transparent coating film applies a liquid or paste-like coating material, the coating material smoothly fills the unevenness, so that the surface shape of the pixel electrode is hardly affected by the unevenness on the lower layer side. Therefore, even if the pixel electrode is electrically connected to the drain region of the TFT via the contact hole having a large aspect ratio because the pixel electrode is formed on the upper layer side of the color filter layer, a flat pixel having no step on the surface is formed. Electrodes can be formed. Therefore, rubbing can be performed stably and the occurrence of a reverse tilt domain can be prevented.
Therefore, according to the present invention, display quality is improved.

In the present invention, the conductive transparent coating film may be formed by a coating film forming method such as a spin coating method, a dipping method or a printing method. May be used.

In the present invention, the thin film switching element is, for example, a TFT.

In the present invention, the conductive transparent coating film is a coated ITO film or the like.

In the present invention, the pixel electrode has a transparent conductive sputtered film below the conductive transparent coated film, and the conductive transparent coated film is connected to the thin film switching element via the conductive sputtered film. It is preferable that the conductive connection is made. The ITO film (conductive transparent coating film) formed by the coating film forming method tends to have a higher contact resistance with the drain region (silicon film) than the ITO film or the metal film formed by the sputtering method. In the present invention, the ITO film formed by the coating film forming method is electrically connected to the drain region only through the conductive sputter film.
The problem that the contact resistance is large can be solved.

It is preferable that the conductive sputtered film is a transparent conductive sputtered film laminated below the conductive transparent coating film. With this configuration, since the pixel electrode includes the conductive transparent coating film and the transparent conductive sputtering film, the pixel electrode is formed by the coating film forming method.
Even though the TO film (conductive transparent coating film) tends to have a higher sheet resistance than an ITO film or a metal film formed by a sputtering method, the problem that the sheet resistance is large is that the conductive film having a small sheet resistance has a problem. The film dissolves.

In the present invention, the color filter layer is preferably a color material fixed by an ink jet printer.

In this case, the fixing area of the color material is
It is preferable that the color material is surrounded by a bank of ridges that protrude above the surface of the color material to prevent the ink ejected from the printer head from flowing out when forming the color filter layer. With such a configuration, when the ink is ejected from the head of the ink jet printer, the outflow of the ink can be prevented by the bank, and so-called color bleeding does not occur.

In the method of manufacturing an active matrix liquid crystal display device having such a configuration, in forming the conductive transparent coating film, a transparent conductive film precursor is coated and formed on the upper side of the color filter layer. The precursor is subjected to a heat treatment to form a conductive film, and thereafter, the conductive film is patterned to obtain the conductive transparent coating film. As described above, even if heat treatment is performed on the precursor of the transparent conductive film, in this state, the color filter layer is in a state covered with the precursor of the transparent conductive film. Therefore, even if this heat treatment is performed in the air, the color filter layer is not exposed to the air at the time of heating. Therefore, even if the color filter layer has low oxidation resistance, the color filter layer does not deteriorate.

In this case, when the precursor is heat-treated, it is preferable to perform lamp annealing or laser annealing on the precursor. With this configuration, when the precursor is annealed, the color filter layer is locally heated by the lamp or the laser and is instantaneously cooled, thereby preventing the deformation of the transparent substrate and the deterioration of the color filter layer. it can.

[0020]

Embodiments of the present invention will be described with reference to the drawings. In each of the embodiments described below, portions having the same functions as those of the conventional color liquid crystal display device are denoted by the same reference numerals.

Embodiment 1 (Overall Configuration) FIG. 1 is a configuration diagram of a color liquid crystal display device to which the present invention is applied, and FIG. 2 is partitioned and formed on an active matrix substrate used in the color liquid crystal display device. FIG. 3 is a cross-sectional view showing an enlarged part of the pixel region, and FIG. 3 is a plan view thereof. FIG. 2 corresponds to a cross-sectional view taken along line YY ′ of FIG.

In the color liquid crystal display device 1 shown in FIG.
The liquid crystal 30 sealed between the transparent substrates 10 and 20 is provided with a counter electrode 11 and a pixel electrode 4 formed on each of the transparent substrates 10 and 20.
It is designed to be driven between. That is, while the transparent counter electrode 11 is formed on the transparent substrate 10, the pixel region 2 is defined on the transparent substrate 20 by the data lines 41 and the scanning lines 45. And a pixel switching TFT 40 for controlling the supply of a signal voltage to the pixel electrode 4.
(Thin film switching element) is formed.

In the color liquid crystal display device 1 according to the present embodiment, red (R) and green are provided for each pixel region 2 on the side of the transparent substrate 20 which is an active matrix substrate among the two transparent substrates 10 and 20. Color filter layers 13R, 13G, and 13B composed of three color layers (G) and blue (B) are alternately formed, and these color filter layers 13R, 13G, and 13B are formed.
Constitutes the color filter 130. These color filter layers 13R, 13G, and 13B can be manufactured by a method such as a dyeing method or a pigment dispersion method. In this embodiment, as described later, the ink discharged from the head of the inkjet printer is fixed as a color material. It was made. In addition, the dyeing method is to apply a resist to be a dyed base material,
After patterning, the resist is dyed by dipping in a dye solution. The pigment dispersion method is a method of applying and patterning a colored pigment resist in advance.

(Structure of Active Matrix Substrate) FIG.
As shown in (1), in the active matrix substrate used in the color liquid crystal display device 1 of the present embodiment, the TFT 40 for pixel switching and the color filter layers 13R, 13G, and 13B having a film thickness of, for example, 0.5 μm to 3 μm (color filter 130). , And the pixel electrode 4 are laminated on the insulating transparent substrate 20 in this order from the lower layer side. TFT40
Are the source region 44, the drain region 46, and the source region 4
A channel region 47 for forming a channel between the gate electrode 4 and the drain region 46, a gate electrode 45 facing the channel region 47 via the gate insulating film 43, and a film formed on the surface side of the gate electrode 45. 500nm thick
The source electrode 31 made of an aluminum film electrically connected to the source region 44 through the contact hole 482 of the interlayer insulating film 48, and the drain region 46 through the contact hole 481 of the interlayer insulating film 48. And a relay electrode 49 for electrical connection. The relay electrode 49 is an aluminum film formed simultaneously with the source electrode 31 and has no light transmission. Therefore, the formation region is limited to the inside and the periphery of the contact hole 481 so as not to lower the aperture ratio of the pixel region 2. I have. The source electrode 41 is a part of a data line, and the gate electrode 45 is a part of a scanning line.

In the present embodiment, the color filter layers 13R, 13R having a thickness of 0.5 μm to 3 μm are formed on the surface side of the interlayer insulating film 48.
3G and 13B are formed.
The pixel electrodes 4 are formed on the surface sides of R, 13G, and 13B. The color filter layers 13R, 13G, and 13B include:
A contact hole 131 is formed in a region where the relay electrode 49 is located (a region corresponding to the drain region 46 of the TFT 40).
The pixel electrode 4 is conductively connected to the relay electrode 49 via 31. Therefore, the pixel electrode 4 is connected to the color filter layer 13.
It can be said that it is conductively connected to the drain region 46 of the TFT 40 via the contact holes 131 of R, 13G, and 13B.

Here, the source electrode 41 is an interlayer insulating film 48
While the pixel electrode 4 is stacked on the surface of
The source electrode 41 and the pixel electrode 4 are formed on the surfaces of the color filter layers 13R, 13G, and 13B, and are located between different layers. Accordingly, since the source electrode 41 and the pixel electrode 4 do not short-circuit, in any of the pixel regions 2 in this embodiment, as can be seen from FIG.
The outer edges 401 and 402 are formed so as to be located above the data line 41 between the adjacent pixel regions. Further, the pixel electrode 4 is formed so that the outer peripheral edges 403 and 404 are located above the scanning line 45 between adjacent pixel regions. That is, since a part of the pixel electrode 4 covers the data line 41 and the scanning line 45, the outer peripheral edges 401, 402, 403, 4
There is no gap between the data line 41 and the data line 41 and the scanning line 45. Therefore, since the data lines 41 and the scanning lines 45 themselves function as a black matrix, high-quality display can be performed without increasing the number of steps.

As shown in FIGS. 2 and 3, on the surface of the source electrode 41 (data line 41), the outflow of ink is prevented when a color material is fixed by an ink jet printer as described later. Ridge bank 133
Are formed. The bank 133 is a photosensitive resist film such as polyimide, an amorphous silicon film, or another insulating film formed to have a thickness protruding above the surface of the color material. In this embodiment, an amorphous silicon film is used. Further, the bank 133 is formed along a position corresponding to the surface of the scanning line 45 among the surface of the interlayer insulating film 48. Therefore, the formation regions (pixel regions 2) of the color filter layers 13R, 13G, and 13B are in a state of being surrounded by the banks 133.

Referring again to FIG. 2, in the present embodiment, the pixel electrode 4 includes a sputtered ITO film 4A (conductive sputtered film) formed on the surfaces of the color filter layers 13R, 13G, and 13B by sputtering, and a surface of the ITO film. And a coating ITO film 4B (conductive transparent coating film). Therefore, the coated ITO film 4B is connected to the relay electrode 49 via the sputtered ITO film 4A located thereunder.
To the drain region 46 of the TFT 40. Sputtered ITO film 4A and coated ITO film 4B
As described later, since they are sequentially formed and then collectively patterned and formed, their formation regions are the same. As will be described later, the sputtering IT
From the viewpoint of compensating for the large sheet resistance of the applied ITO film 4B by the O film 4A, the sputtered ITO film 4A may be formed in a smaller area than the applied ITO film 4B. Further, from the viewpoint of compensating for the large sheet resistance of the applied ITO film 4B, the sputtering
The O film 4A may be formed on the upper side of the coated ITO film 4B.

(Main Effects Regarding the Structure of the Present Embodiment) In the color liquid crystal display device 1 using the active matrix substrate thus configured, the color filter layers 13R, 13G, and 13B are provided on the side of the active matrix substrate. When the transparent substrate 10 having the counter electrode 11 and the active matrix substrate (transparent substrate 20) are bonded together, no displacement occurs between the color filter layers 13R, 13G, 13B and the pixel region 2. Therefore, even if the pixel electrode 4 is expanded to the maximum, the display of the color information is not disturbed. Therefore, the high quality display can be performed because the pixel electrode 4 can be expanded as compared with the conventional one. Can be. Further, since the transparent substrate 10 provided with the counter electrode 11 does not have a pattern requiring accuracy, an alignment operation is not required when this substrate and the active matrix substrate (the transparent substrate 20) are bonded, and the bonding process is not performed. Cost can be reduced.

In the active matrix substrate integrated with a color filter, the pixel electrode 4 needs to be formed on the color filter layers 13R, 13G, and 13B in order to drive the liquid crystal. 0.5 μm to 3
Through the contact holes 131 of the color filter layers 13R, 13G, and 13B each having a thickness of μm, the pixel electrode 4 is connected to a TFT.
It will be conductively connected to the drain region 46 of 40. That is, the pixel electrode 4 is electrically connected to the drain region 46 of the TFT 40 via the contact hole 131 having a large aspect ratio formed in the color filter layers 13R, 13G, 13B thicker than the interlayer insulating film made of a silicon oxide film or the like. Will do. Nevertheless, in the present embodiment, as will be described later, the pixel electrode 4 is formed by using a conductive transparent coating film 4B having good step coverage and formed by using a coating film forming method such as a spin coating method, a dip method or a printing method. As a result, a flat pixel electrode 4 having no steps on the surface can be formed. Therefore, rubbing can be performed stably and the occurrence of a reverse tilt domain can be prevented. Therefore, according to the color liquid crystal display device 1 of the present invention, display quality is improved.

Further, since the sputtered ITO film 4A is formed below the coated ITO film 4B, the sheet resistance of the ITO film formed by the coating film forming method is lower than that of the ITO film formed by the sputtering method. Even if it tends to be large, the problem that the sheet resistance is large is solved by the sputtered ITO film 4A having a small sheet resistance.

(Method of Manufacturing Active Matrix Substrate)
A method of manufacturing such an active matrix substrate will be described with reference to FIGS. FIG. 4 and FIG.
FIG. 5 is a process cross-sectional view illustrating a part of a process performed in the method of manufacturing an active matrix substrate of the present embodiment. FIG. 5 is a diagram illustrating color filter layers 13R, 13G, and 13B formed by an inkjet method.
FIG. 4 is an explanatory diagram when forming a.

(TFT Forming Step) In this embodiment, FIG.
As shown in FIG. 1A, a general-purpose non-alkaline glass is used as the insulating substrate 20. First, after cleaning the insulating substrate 20, the CVD method (Chemical Vapor Dep.
osition) and PVD (Physical Vapor Deposition)
Thereby, a base protective film 21 made of a silicon oxide film having a thickness of 300 nm is formed. Examples of the CVD method include a low pressure CVD method (LPCVD method) and a plasma CVD method (PECVD method). The PVD method includes, for example, a sputtering method.

Next, after a semiconductor film such as an intrinsic silicon film to be an active layer of the TFT is formed by a CVD method or a PVD method, it is patterned into an island shape. The semiconductor film 42 thus obtained is formed as-d
The deposited film can be used as a semiconductor layer such as a channel region of a TFT. In addition, the semiconductor film 4
For 2, the crystallization may be performed by irradiating optical energy or electromagnetic energy such as lamp light or laser light for a short time before or after patterning.

Next, after a gate insulating film 43 having a thickness of 100 nm is formed on the surface side of the semiconductor film 42 by a PVD method, a CVD method or the like, a thin film (not shown) such as an aluminum film serving as a gate electrode is formed. It is formed by sputtering. Usually, the gate electrode and the gate wiring are formed by the same process using the same metal material or the like. After depositing a thin film serving as a gate electrode, patterning is performed to form a gate electrode 45.
At this time, scanning lines are also formed. Next, impurity ions are introduced into the semiconductor film 42 using the gate electrode 45 as a mask to form a source region 44 and a drain region 46. The portion where the impurity ions have not been introduced becomes the channel region 47. In this method, since the gate electrode 45 serves as a mask for ion implantation, the channel region 47 has a self-aligned structure formed only below the gate electrode 45. However, even if a TFT having an offset gate structure or an LDD structure is formed, Good. Impurity ions can be introduced by an ion doping method in which a dopant element and hydrogen are simultaneously implanted using a mass non-separable ion implanter, or only desired impurity ions are implanted using a mass separable ion implanter. For example, an ion implantation method can be applied.
As a source gas of the ion doping method, a hydride of an implanted impurity such as phosphine or diborane diluted to about 0.1% in hydrogen is used.

Thus, the source region 4 of the TFT 40
4. After forming the drain region 46, the channel region 47, the gate insulating film 43, and the gate electrode 45, an interlayer insulating film 48 made of a silicon oxide film having a thickness of 500 nm is formed on the surface side of the gate electrode 45 by CVD or PVD. It is formed by a method.

Next, as shown in FIG. 4B, the source region 44 and the drain region 46 of the interlayer insulating film 48 are formed.
Contact holes 481 at respective positions corresponding to
482 are formed. Next, after an aluminum film is formed on the surface side of the interlayer insulating film 48 by a sputtering method, the aluminum film is patterned, and the source electrode 41, the relay electrode 49, and the data line are simultaneously formed.

(Bank forming step) Next, the interlayer insulating film 48
Amorphous silicon film under reduced pressure CVD
After a thick film is formed by a method such as the PECVD method or the sputtering method, the amorphous silicon film is patterned in a lattice shape, and as shown in FIG.
On the surface of 1 (data line 41), a ridge bank 133 is formed along the surface. At this time, as described with reference to FIG.
A rib 133 is also formed at a position corresponding to the surface of the ridge. Therefore, the pixel area 2 is in the bank 13
3 and the inside thereof is a color filter layer formation scheduled area 139.

At this time, a CDE (Chemical Dry Etching) method is used for etching the amorphous silicon film,
Tapered etching may be performed. At this time, the CDE is performed under the conditions of an etching gas of CF ₄ / O ₄ , a microwave plasma etching apparatus, and a frequency of 2.54.
GHz, microwave power 700W, pressure 30Pa, CF ₄
The gas flow rate is 990 sccm, the O ₂ gas flow rate is 90 sccm, the etching rate is 2500 Å / min, and the etching time is 12 minutes. When etching is performed under these conditions, the bank 133 has a tapered shape with a taper angle of about 60 ° to 80 °. When the taper etching is performed in this manner, the color filter layer forming region 139 partitioned by the bank 133 has a shape whose width is increased from the bottom surface toward the opening. Therefore, there is an advantage that it is easy to inject ink into the color filter layer formation scheduled area 139 when ink is injected into the color filter layer formation scheduled area 139.

(Color Filter Layer Forming Step) Next, FIG.
As shown in (D), R, R
G and B inks 51R, 51G, and 51B are respectively injected. In this case, a general inkjet printer can be used, but the R, G,
The interval between the nozzles 52 of B is adjusted to match the distance between the centers of the adjacent pixel regions 2.

That is, as shown in FIG. 5 as an enlarged plan view of the color filter layer forming region 139 defined by the bank 133, the size of the color filter layer forming region 139 is, for example, about 250 μm × 80 μm. The width of the bank 133 is about 5 μm to 20 μm. Therefore, the interval between the nozzles 52 of the printer head 50 may be about 85 μm to 100 μm. When the resolution of the inkjet printer to be used is 360 dpi, the diameter of one dot of ink is about 70 μm to 100 μm. Therefore, when viewed only from a planar dimension, the ink 51R is included in one color filter layer formation scheduled area 139. 51
G and 51B can be injected by 3 dots. Here, the volume occupied by one dot of ink is usually determined, but the plane size of the color filter layer formation scheduled area 139 is also determined to be, for example, 250 μm × 80 μm for each liquid crystal display device. Therefore, the height of the bank 133 and the number of ink injection dots are appropriately set to optimal conditions so that the amount of ink is not too large or too small. However, when the inks 51R, 51G, and 51B protrude from the bank 133, color bleeding occurs in the color filter 130. Therefore, in this embodiment, the bank 133 is formed to be slightly thicker and the inks 51R,
The protrusion of 51G and 51B is prevented.

The types of ink that can be used here include, for example, those shown in Table 1.

[0043]

[Table 1]

As shown in Table 1, any of a pigment-based ink and a dye-based ink may be used.
R, 13G, 13B, of course, satisfying the function when it becomes, so that it can be applied to the inkjet printer,
It is necessary to have characteristics of a viscosity of 10 cps or less and a surface tension of about 30 dyne / cm. In addition, "wetting agent" in Table 1,
The “penetrating agent” is included to reduce the surface tension of the ink and increase the wettability.

As shown in FIG.
After the injection of 1G and 51B is completed, the entire transparent substrate 20 is heated in an oven, and the inks 51R, 51G and 51B are heated.
B is dried and fixed. The conditions are an atmosphere in the air, a temperature of 110 ° C., and a time of 10 minutes. The atmosphere may be a nitrogen atmosphere, the temperature may be about 80 ° C. to 140 ° C., and the time may be about 10 minutes to 1 hour.

Through this step, the inks 51R, 51G, 5
When 1B is dried, as shown in FIG. 6A, the color filter layers 13R, 13G, and 13 of the three colors whose surfaces are flattened.
B is formed.

(Pixel Electrode Forming Step) Next, as shown in FIG. 6B, the color filter layers 13R, 13G, 13B
After the contact hole 131 is opened, a sputtered ITO film 4A (conductive sputtered film) is formed on the entire surface of the color filter layers 13R, 13G, and 13B by a sputtering method.

Subsequently, a coating ITO film 4B (conductive transparent coating film) is formed on the surface of the sputtered ITO film 4A.

In forming the coated ITO film 4B, various liquid or paste-like coating materials (precursors of the transparent conductive film) can be used. Among these coating materials, a dipping method and a spin coating method can be used if they are liquid, and a screen printing method and the like can be used if they are pasty. The coating material used in the present embodiment is a liquid material in which organic indium and organic tin are mixed in xylol at a ratio of 97: 3 to 8% (for example, trade name: Adeka ITO coating film manufactured by Asahi Denka Kogyo Co., Ltd.). / ITO-103L) and can be applied to the surface side of the transparent substrate 20 (the surface of the sputtered ITO film 4A) by a spin coating method. Here, as the coating material, a material having a ratio of organic indium to organic tin in the range of 99/1 to 90/10 can be used.

In this embodiment, the liquid or paste-like coating film applied to the front surface of the transparent substrate 20 is subjected to heat treatment in a heat treatment device after drying and removing the solvent.

At this time, as a heat treatment condition, for example, in the case of a heat treatment in a furnace, the first heat treatment is carried out in air at a temperature of 200 ° C. to 300 ° C. or in an oxygen-containing atmosphere or a non-reducing atmosphere for 30 minutes to 60 minutes. After the heat treatment (firing), the heat treatment is performed in a hydrogen-containing reducing atmosphere at a temperature of about 200 ° C.
A second heat treatment is performed for 0 to 60 minutes. In any case, the processing temperature in the second heat treatment is set lower than the processing temperature in the first heat treatment so that the film stabilized by the first heat treatment does not deteriorate. When such a heat treatment is performed,
As the organic components are removed, the coating film becomes a mixed film of indium oxide and tin oxide (coated ITO film 4B). As a result, the film thickness is about 500 angstroms to about 2000
The Angstrom-coated ITO film 4B has a sheet resistance of 10 ³ Ω / □ to 10 ⁵ Ω / □, a light transmittance of 90% or more, and constitutes the pixel electrode 4 having sufficient performance together with the sputtered ITO film 4A. be able to.

Thereafter, the transparent substrate 20 is subjected to a second heat treatment in a reducing atmosphere, a non-oxidizing atmosphere such as nitrogen gas, or another non-oxidizing atmosphere until the substrate temperature becomes 150 ° C. or lower. Hold, substrate temperature is 150
After the temperature falls to or below ℃, the transparent substrate 20 is taken out of the heat treatment apparatus into the atmosphere. As described above, if the transparent substrate 20 is exposed to the air after the temperature of the transparent substrate 20 has dropped to about 150 ° C. or less,
Since the film whose resistance has been reduced by the reduction in the second heat treatment in the hydrogen-containing atmosphere can be prevented from being oxidized again, the coated ITO film 4B having a small sheet resistance can be obtained. The temperature at which the transparent substrate 20 is taken out of the heat treatment apparatus into the atmosphere is more preferably 100 ° C. or lower in order to prevent the re-oxidation of the applied ITO film 4B. This is because the specific resistance of the applied ITO film 4B decreases as the number of oxygen vacancies in the film increases, and the specific resistance increases when re-oxidation of the applied ITO film 4B occurs due to oxygen in the atmosphere.

Even if such heat treatment is performed, the color filter layers 13R, 13G,
3B is a sputtered ITO film 4A and a coated ITO film 4B
Is not exposed to air because it is covered by a coating to form Therefore, even if heat treatment is performed to form the coated ITO film 4B, the color filter layers 13R,
No deterioration such as air oxidation occurs in 3G and 13B.

In performing such a heat treatment, it is preferable to perform a lamp anneal (rapid heat treatment) or a laser anneal instead of the heat treatment in the furnace. Such lamp anneal and laser anneal are all used in TFT
Is widely used as a heat treatment for crystallizing an amorphous silicon film in the manufacturing process, and locally heats a liquid or paste-like coating film applied on the surface side of the insulating substrate 20 by lamp light or laser light. To go. For this reason, even if it is locally heated to, for example, 300 ° C., the heating time is short and the cooling is instantaneous. Therefore, it is possible to prevent the transparent substrate 20 from being thermally deformed and to prevent the color filter layers 13R, 13G, 13B from being thermally degraded.

After the sputtered ITO film 4A and the coated ITO film 4B are formed in this manner, they are collectively patterned by using an etching solution such as aqua regia or HBr or by dry etching using CF ₄ or the like. 2
The pixel electrode 4 is formed as shown in FIG.

As described with reference to FIG. 3, the outer peripheral edges 401, 4
A black matrix composed of the data lines 41 and the scanning lines 45 can be formed only by patterning so that 02, 403, and 404 cover the data lines 41 and the scanning lines 45 between the adjacent pixel regions. That is, since the data lines 41 and the scanning lines 45 are usually made of a metal film, these data lines 41 and the scanning lines 45 become light shielding films. Therefore, high-quality display can be performed without increasing the number of steps. In addition, the pixel electrode 4 is connected to the data line 4
1 and the scanning line 45 are extended as far as possible, so that the aperture ratio of the pixel region 2 is high and the display quality is improved.

Even when the color liquid crystal display device 1 is manufactured using the active matrix substrate thus configured, since the color filter layers 13 R, 13 G, and 13 B are located below the pixel electrode 2, the color filter layers 13 R, 13 G, and 13 B are provided via the scanning lines 45. When the TFT is driven by a control signal supplied from the data line, image information is written from the data line 41 to the liquid crystal cell formed between the pixel electrode 4 and the opposite substrate (not shown) via the TFT 40. Thus, a predetermined display can be performed.

(Main Effects Regarding the Manufacturing Method of the Present Embodiment) In the present embodiment, the coated ITO film 4B is used for forming the pixel electrode 4. Since this coating film forming method is excellent in step coverage, a liquid or paste-like coating material for forming the coating ITO film 4B is formed by using the unevenness on the surface of the sputtered ITO film 4B caused by the contact hole 131. Fill smoothly. The color filter layer 1
Since the ink jet method is used to form the 3R, 13G, and 13B, when the ink is applied on the insulating substrate 20, the color is thicker in the concave portion and thinner in the convex portion. Filter layer 13R, 1
3G and 13B are formed. Therefore, irregularities and the like caused by the data lines 41 and the scanning lines 45 are not reflected on the surface of the pixel electrode 4. Therefore, a flat pixel electrode 4 having no step on its surface
Can be formed, so that rubbing can be performed stably,
The occurrence of a reverse tilt domain can be prevented. Therefore, according to the present invention, display quality is improved.

Further, since the ink jet method is used for the manufacture of the color filter 130 and the interval between the nozzles 52R, 52G, 52B of the printer head 50 is made to correspond to the distance between the centers of the color filter forming regions, the color filter forming process is performed. Ink ink 51R, 51G,
51B can be injected at a high speed. Therefore, the time required for manufacturing the entire color filter 130 can be significantly reduced. In addition, the completed color filter 130
If the ink 51R, 51G, and 51B are not filled with the inks 51R, 51G, and 51B, that is, if there is a defect, if the ink jet method is used, the inks 51R, 51
G and 51B can be implanted, and defects can be repaired. Further, the color filter layers 13R, 13R
Regarding the formation of G and 13B, the equipment to be used can be an ink jet printer and an oven for drying the ink, so that the equipment cost can be kept low. Also,
When the inks 51R, 51G, and 51B are injected, the bank 133 constitutes a so-called ink storage tank, and the ink is injected into the ink storage tank. 51B does not protrude into other areas. Therefore, the inks 51R, 51G, 51B
Are confined in the predetermined regions, and therefore, the color filter 130 without color bleeding can be realized. Therefore, the liquid crystal display device 1 with high display quality can be realized.

The bank 1 for reliably preventing the ink 51R, 51G, 51B from protruding when the ink is injected.
Even if the height 33 is increased, the height position of the surface of the bank 133 and the surface of the applied ITO film 4B (pixel electrode 4) can be matched by increasing the thickness of the applied ITO film 4B. Therefore,
The surface of the pixel electrode 4 has no unevenness due to the bank 133. Therefore, the present invention can be applied to the color liquid crystal display device 1 having a cell gap of 5 μm or less. In addition, the color filter layers 13R, 13G, and 13B are covered with the pixel electrodes 4 and are isolated from the outside air.
R, 13G, and 13B can be prevented from discoloring over time.

[Second Embodiment] In any of the embodiments described below, the basic configuration is the same as that of the first embodiment. Is omitted.

In the first embodiment, the color filter layers 13R, 13G, and 13B are directly formed on the surface of the interlayer insulating film 48 formed on the surface of the gate electrode 45.
After forming the source electrode 41 and the relay electrode 49, an upper interlayer insulating film 48A such as a silicon oxide film is formed on the surface of the source electrode 41 and the relay electrode 49, and the color filter layer 13R is formed on the surface of the interlayer insulating film 48A. 13G and 13B may be formed. Even in such a configuration, the pixel switching TFT 40 and the color filter layers 13R, 13G, 13B
Since the (color filter 130) and the pixel electrode 4 are laminated on the insulating transparent substrate 20 in this order from the lower layer side, the pixel electrode 4 includes the color filter layers 13R and 13R.
The conductive connection is made to the relay electrode 49 via the contact holes 131 of the G and 13B and the contact hole 481A of the upper interlayer insulating film 48A. In such a configuration, the pixel electrode 4 is conductively connected to the relay electrode 49 via the contact holes 131 and 481A having a large aspect ratio by the addition of the upper interlayer insulating film 48A. Nevertheless, in the present invention, since the coated ITO film 4B having good step coverage is used for the pixel electrode 4, the pixel electrode 4 having a flat surface can be formed.

[Embodiment 3] The sputtered ITO film 4B is omitted from the pixel electrode 4 having the structure shown in FIG. 2 or 7, and the coated ITO film 4A is directly conductively connected to the relay electrode 49 made of an aluminum film. It may have a structure. Even in such a structure, the sputtered ITO film 4B is only conductively connected to the drain region 46 (silicon film) of the TFT 40 via the relay electrode 49. Therefore, the coated ITO film 4B
Although the contact resistance with the drain region (silicon film) tends to be higher than that of the sputtered ITO film or other metal electrodes, the relay electrode 49 can solve such a problem of the contact resistance.

In adopting such a structure, aluminum is used as the relay electrode 49. However, a two-layer film of aluminum and a high melting point metal is used for the relay electrode 49, and the high melting point metal comes into contact with the applied ITO film 4B. With this configuration, the contact resistance between the applied ITO film 4B and the relay electrode 49 can be further reduced. That is, since high melting point metals such as tungsten and molybdenum are less susceptible to oxidation than aluminum, it is difficult to coat ITO containing a large amount of oxygen.
It is not oxidized even when it comes into contact with the film 4B. Therefore, the contact resistance between the relay electrode 49 and the applied ITO film 4B can be kept low.

[Fourth Embodiment] Further, the relay electrode 49 is omitted from the structure shown in FIG. 2 or FIG.
The structure shown in FIG. Of these structures,
In the embodiment shown in FIG. 8A, the pixel electrode 4 is provided with the contact holes 13 of the color filter layers 13R, 13G, and 13B.
1, and is directly and conductively connected to the drain region 46 of the TFT 40 via the contact hole 481 of the interlayer insulating film 48. In addition, in the embodiment shown in FIG. 8B, the pixel electrode 4 includes the contact holes 131 of the color filter layers 13R, 13G, and 13B, the contact holes 481A of the upper interlayer insulating film 48A, and the lower interlayer insulating film 48.
Is directly conductively connected to the drain region 46 of the TFT 40 through the contact hole 481 of FIG. In such a structure, the pixel electrode 4 is conductively connected to the drain region 46 of the TFT 40 via the contact hole having a large aspect ratio because the relay electrode is omitted. Nevertheless, in the present invention, since the coated ITO film 4B having good step coverage is used for the pixel electrode 4, the pixel electrode 4 having a flat surface can be formed.

In the embodiment shown in FIGS. 8A and 8B, since there is no relay electrode, the pixel electrode 4 is conductively connected directly to the drain region 46 of the TFT 40. Nevertheless, in the present invention, since the sputtered ITO film 4A is formed under the coated ITO film 4B of the pixel electrode 4, the sputtered ITO film 4A is formed between the coated ITO film 4B and the drain region 46 (silicon film) of the TFT 40. Conductive connection via Therefore, the coated ITO film 4B is
Even if the contact resistance with the drain region (silicon film) tends to be higher than that of A, such a problem of the contact resistance can be solved by the sputtered ITO film 4A.

[Embodiment 5] As shown in FIGS. 9A and 9B, the structure of the relay electrode 4 shown in FIG.
9 is omitted. In the present embodiment, the bank 133 surrounding the color filter layer forming area (the area where the color material is fixed by the inkjet method) along the source electrode and the scanning line is omitted. Therefore, in this embodiment, instead of the inkjet method, by a dyeing method or a pigment dispersion method,
The color filter layers 13R, 13G, and 13B are formed. However, adjacent color filter layers 13R, 13G,
13B do not overlap in any part. In the dyeing method, after applying and patterning a resist to be a dyed base material,
In this method, the resist is dyed by dipping in a dye solution. The pigment dispersion method is a method of applying and patterning a colored pigment resist in advance. Therefore, the color filter layer 13
R, 13G, and 13B themselves have markedly inferior step coverage, unlike color filter layers formed by the inkjet method. However, in the present embodiment, the pixel electrode 4 uses a coated ITO film having good step coverage. Accordingly, the pixel electrode 4 having a flat surface can be formed. Even in this case, the pixel electrode 4
A sputtered ITO film is formed below the coated ITO film 4B to solve the problem that the coated ITO film 4B has a higher contact resistance with the drain region (silicon film) than the sputtered ITO film. Is also good.

[Fifth Embodiment] In each of the above embodiments, a planar type TFT has been described as an example. However, the present invention may be applied to an inverted stagger type TFT or the like. For example, FIG.
In the inverted staggered TFT 40 shown in FIG.
0, the TFT 40 and the color filter layer 1 from the lower layer side.
Since the 3R, 13G, 13B and the pixel electrode 4 are stacked in this order and the coated ITO film is used for the pixel electrode 4, the surface of the pixel electrode 4 can be flattened. In this TFT 40, an underlying protective film 21, a gate electrode 45, a gate insulating film 43, an intrinsic amorphous silicon film forming a channel region 47, and an insulating film 29 for protecting a channel are laminated in this order on the surface side of the insulating substrate 20. Have been. High-concentration N-type amorphous silicon films are formed as source / drain regions 44 and 46 on both sides of the insulating film 29 for protecting the channel, and chromium, aluminum, titanium and the like are formed on the surfaces of the source / drain regions 44 and 46. The source electrode 41 and the relay electrode 49 made of the sputtered film are formed. Furthermore, color filter layers 13R, 13G, 13B,
And a pixel electrode 4. Here, the pixel electrode 4 is electrically connected to the relay electrode 49 via the contact holes 131 of the color filter layers 13R, 13G, and 13B having a large aspect ratio. Since the ITO film is used, the surface of the pixel electrode 4 can be flattened. In addition, the pixel electrode 4
Is electrically connected to the drain region 46 via a relay electrode 49 made of a sputtered film, so that the problem that the pixel electrode 4 made of a coated ITO film has a high contact resistance with the drain region 46 (silicon film) can be solved. . further,
Since the pixel electrode 4 is formed between different layers from the source electrode 41, these electrodes are not short-circuited. Therefore, even when the inverted staggered TFT 40 is used, the pixel electrode 4 can be formed in a wide area to the extent that the pixel electrode 4 covers the source electrode 4 (data line) or the scanning line (not shown). The lines and scanning lines themselves can be used as a black matrix, and the aperture ratio of the pixel region can be increased.

Also in this case, the color filter layer 1
If the 3R, 13G, and 13B are formed by an inkjet method, the color filter layers 13R, 13G, and 13B
A ridge bank 133 is formed in advance to protrude above the surface of the (color material) and to prevent ink discharged from the printer head from flowing out to the surroundings.

[Other Embodiments] From the viewpoint of minimizing the number of steps, the relay electrode 49 (conductive sputter film) is formed simultaneously with the source electrode 41 and the data line, and is made of the same material. Metal film (aluminum film)
, But may be made of any material different from that of the source electrode 41.

In each case, the application of the pixel electrode I
In forming the TO film, the coating I
The spin coating method is used to form the TO film. However, if a paste-like coating material is used, the coating ITO film can be formed by a printing method. If this paste-like coating material is used, screen printing can be used. Therefore, the paste-like coating material (precursor of the transparent conductive film) is printed only on the area where the pixel electrode is to be formed, and then dried and heat-treated. The operation performed may be used as it is as a pixel electrode. In this case, since patterning of the ITO film by etching is not required, there is an advantage that the manufacturing cost can be significantly reduced.

As shown in FIGS. 2, 6, 7, 8, and 10, a conductive transparent coating film such as a coating ITO film constituting the pixel electrode 4 is formed in the region inside the bank 133. . Therefore, when forming the conductive transparent coating film, a liquid coating material (precursor of the transparent conductive film) is formed by applying a liquid coating material (precursor of the transparent conductive film) on the inner region of the bank 133 by an ink jet method, and thereafter, the coating film is subjected to heat treatment or the like. May be added.

Further, as shown in FIGS. 11A to 11E, the arrangement of the color filters 130 includes a vertical stripe type, a horizontal stripe type, a mosaic type, a triangle type (with color rotation), a triangle type ( (No color rotation), and the color filter of the present invention can be applied to any of these methods. In particular, in the stripe method, the bank for preventing the ink from flowing out may have a stripe shape, so that the color filter forming process by the ink jet printer is simplified.

As shown in FIGS. 12A and 12B, a pixel switching drive element (thin film switching element) formed on a transparent substrate constituting an active matrix substrate is a MIM instead of a TFT. A diode 60 may be formed. That is, the MIM diode 6
A tantalum oxide film 62 is formed on the surface of a lower electrode 61 made of a 0 tantalum film, and an upper electrode 63 made of a chromium film partially overlaps the tantalum oxide film 62. MIM diode 6
The color filter layers 13R, 13G,... Are formed on the surface side of the pixel electrode 0, and the pixel electrode 4 is conductively connected to the upper electrode 63 via the contact hole 131. Also in the color liquid crystal display device using the active matrix substrate having such a structure, the pixel electrode 4 is conductively connected to the upper electrode 63 via the contact holes 131 having a large aspect ratio of the color filter layers 13R, 13G,. Become. Nevertheless, in the present invention, the coating I having good step coverage
Since the TO film is used, the pixel electrode 4 having a flat surface can be formed.

The specific numerical values such as the film thickness of each film constituting the color filter and the color liquid crystal display device, or the specific manufacturing conditions in each manufacturing process are not limited to those in the above-described embodiment, and may be appropriately changed. Of course, the design can be changed. Further, the liquid crystal display device of the present invention can be applied to devices such as a personal computer, a projector, and a viewfinder, and it is needless to say that the use is not limited.

[0076]

As described above, in the active matrix liquid crystal display device according to the present invention, the thin film switching element, the color filter layer, and the pixel electrode are laminated in this order on the substrate on the active matrix substrate side from the lower layer side. And the pixel electrode is provided with a conductive transparent coating film which is conductively connected to the thin film switching element via a contact hole of the color filter layer. Therefore, according to the present invention, since the color filter layer is provided on the side of the active matrix substrate, when the substrate having the counter electrode is bonded to the active matrix substrate, the color filter layer and the pixel region are provided between the color filter layer and the pixel region. No shift occurs. Therefore, even if the pixel electrode is expanded to the maximum, the display of the color information is not disturbed, and the aperture ratio in the pixel region can be improved by the expansion of the pixel electrode. Display can be performed. Also,
Since the substrate provided with the counter electrode does not have a pattern requiring precision, alignment work is not required when the substrate is bonded to the active matrix substrate, and the cost of the bonding step can be reduced.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a color liquid crystal display device to which the present invention is applied.

FIG. 2 is an enlarged cross-sectional view showing a part of a pixel region partitioned on an active matrix substrate used in the color liquid crystal display device according to the first embodiment of the present invention.

FIG. 3 is a plan view of a pixel region shown in FIG. 2;

FIG. 4 is a process sectional view illustrating the method of manufacturing the active matrix substrate illustrated in FIG.

FIG. 5 is an explanatory diagram of a step of forming a color filter layer by an inkjet method in the method of manufacturing the active matrix substrate shown in FIG.

6 is a process cross-sectional view showing each process performed after the process shown in FIG. 4 in manufacturing the active matrix substrate shown in FIG. 1;

FIG. 7 is an enlarged cross-sectional view showing a part of a pixel region partitioned on an active matrix substrate used in a color liquid crystal display device according to a second embodiment of the present invention.

FIGS. 8A and 8B are enlarged views each showing a part of a pixel region partitioned on an active matrix substrate used in a color liquid crystal display device according to Embodiment 3 of the present invention; It is sectional drawing.

FIGS. 9A and 9B are enlarged views each showing a part of a pixel region partitioned on an active matrix substrate used in a color liquid crystal display device according to Embodiment 4 of the present invention; It is sectional drawing.

FIG. 10 is a cross-sectional view showing, on an enlarged scale, a part of a pixel region partitioned and formed on an active matrix substrate used in a color liquid crystal display device according to Embodiment 5 of the present invention.

FIGS. 11A to 11E are explanatory diagrams each showing an arrangement of a color filter layer included in a color filter according to another embodiment of the present invention.

12A is a plan view illustrating a part of a pixel region of an active matrix substrate of a color liquid crystal display device using a MIM diode as a driving element, and FIG. 12B is a cross-sectional view taken along line XX ′. .

FIG. 13 is a configuration diagram of a conventional color liquid crystal display device.

FIG. 14 is an enlarged cross-sectional view showing a part of a pixel region defined on a color filter integrated type active matrix substrate used in a conventional color liquid crystal display device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Color liquid crystal display device 2 Pixel area 4 Pixel electrode 4A Sputtered ITO film (conductive sputtered film) 4B Coated ITO film (transparent conductive coated film) 10 Transparent substrate 11 Counter electrode 13R, 13G, 13B Color filter layer 130 Color filter 131 Contact hole 133 formed in color filter layer 133 Bank for preventing outflow of ink 20 Transparent substrate 21 Base protective film 30 Liquid crystal 40 TFT 41 Source electrode (data line) 43 Gate insulating film 44 Source region 45 Gate electrode (scanning line) 46 Drain region 47 Channel region 48, 48A Interlayer insulating film 481, 481A Contact hole of interlayer insulating film 49 Relay electrode such as aluminum sputtered film 50 Printer head 51R, 51G, 51B Ink 52 Nozzle 60 MIM diode 61 Lower electrode 62 Tantalum oxide film 63 Upper electrode

Claims (10)

[Claims] 1. An active matrix liquid crystal display device having a thin film switching element and a pixel electrode conductively connected to the thin film switching element in each pixel region formed in a matrix on a substrate. From the side, the thin-film switching element, the color filter layer, and the pixel electrode are stacked in this order, and the pixel electrode is located above the color filter layer,
An active matrix liquid crystal display device comprising a conductive transparent coating film that is conductively connected to the thin film switching element via a contact hole formed in the color filter layer. 2. The active matrix liquid crystal display device according to claim 1, wherein said conductive transparent coating film is a film formed by applying an ink-jet method. 3. The active matrix liquid crystal display device according to claim 1, wherein said thin film switching element is a thin film transistor. 4. The method according to claim 1, wherein
The active matrix substrate for a liquid crystal display, wherein the conductive transparent coating film is a coating ITO film. 5. The method according to claim 1, wherein
The pixel electrode has a conductive sputter film on the lower layer side of the conductive transparent coating film, and the conductive transparent coating film is conductively connected to the thin film switching element via the conductive sputter film. Characteristic active matrix substrate for liquid crystal display. 6. The active matrix substrate for a liquid crystal display according to claim 5, wherein the conductive sputtered film is a transparent conductive sputtered film laminated below the conductive transparent coating film. . 7. The method according to claim 1, wherein
The active matrix liquid crystal display device, wherein the color filter layer is a color material fixed by an inkjet printer. 8. The color material fixing area according to claim 7, wherein the ink discharged from the printer head flows to the periphery when the color filter layer is formed by projecting to a layer higher than the surface of the color material. An active matrix liquid crystal display device, wherein the active matrix liquid crystal display device is surrounded by a bank of ridges that prevents the liquid crystal display device from operating. 9. The method for manufacturing an active matrix liquid crystal display device according to claim 1, wherein in forming the conductive transparent coating film, a transparent conductive film is formed above the color filter layer. An active matrix liquid crystal display device, wherein a precursor of a film is coated and formed, and then the precursor is subjected to a heat treatment to form a conductive film, and thereafter, the conductive film is patterned to form the conductive transparent coating film. Manufacturing method. 10. The method for manufacturing an active matrix liquid crystal display device according to claim 9, wherein the heat treatment of the precursor is performed by performing lamp annealing or laser annealing on the precursor.