JPH10163422A - Semiconductor integrated circuit device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To build coils in an IC chip, and eliminate the need for external components, by constituting a plurality of metal wiring pattern parts laminated and arranged via interlayer insulating films, and through hole parts formed in the interlayer insulating films. SOLUTION: This device has a substrate part 12 formed on a semiconductor substrate 1, and interlayer films 13-15 which are laminated on the substrate part 12 and composed of insulating material like a silicon oxide film. Coil pattern parts 16a-16d composed of metal material are arranged between the substrate part 12 and the interlayer film 13, between the interlayer films 13 and 14, between the interlayer films 14 and 15, and on the surface of the interlayer film 15. Lead parts of the coil pattern parts 16a, 16c and the coil pattern parts 16b, 16d are connected by connection parts 17, 18. The lead parts of the coil pattern part 16a, 16c are electrically connected via the connection part 17 formed by through holes 13a, 14a. Thereby each two-turns wound inductive-coupled coil can be obtained, and coils as external components are made unnecessary.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a coil in an IC chip.

[0002]

2. Description of the Related Art Transistors, resistors,
Many various electric components such as capacitors are formed.

[0003]

However, since a large number of coils must be formed concentrically in a ring shape, they have not been formed on an IC chip until now and are provided as external components. It is.

[0004]

According to an embodiment of the present invention, there is provided a semiconductor device comprising: a plurality of metal layers stacked via an interlayer insulating film formed on a semiconductor substrate; There is provided a semiconductor integrated circuit device having an inductance composed of a wiring pattern portion and a through-hole portion formed in an interlayer insulating film in order to electrically connect the upper and lower metal wiring pattern portions. You.

With the above-described configuration, a coil can be incorporated in an IC chip, and there is no need to prepare external components as in the conventional case.
All electrical components of the capacitors and coils can be formed using semiconductor forming techniques.

[0006]

1 and 2 show an embodiment of a coil in an IC chip according to the present invention. FIG. 2 shows a cross-sectional state of the IC chip in a portion where the coil is formed. FIG. 1 shows only the coil portion.
The coil 10 shown in these figures has a four-layer structure, and includes a substrate portion 12 made of an insulating material such as a silicon oxide film formed on a semiconductor substrate 1 and a silicon oxide film laminated thereon. Films 13 and 1 made of various insulating materials
4, 15 between the substrate portion 12 and the interlayer film 13, between the interlayer films 13 and 14, between the interlayer films 14 and 15, and on the surface of the interlayer film 15 such as metal such as aluminum. Pattern portions 16a, 16b, 16c, 1 made of a material
6d are arranged respectively, and each coil pattern portion 16a,
The lead portions 16a3 and 16c2 of the coil pattern portion 16c are connected by the connection portion 17, and the lead portions 16b3 and 16d2 of the coil pattern portions 16b and 16d are connected by the connection portion 18.

The coil pattern portions 16a, 16b, 16
Each of c and 16d has a ring portion 16a1, 16b1, 16c1, 16d1 formed in a substantially ring shape,
Lead portions 16a2, 16a3, 16b2, 16b3, 16c2 extending in the same direction from both open ends of the ring portion.
And 16c3, 16d2 and 16d3. In this case, the ring portions 16a1, 16b1, 16
c1 and 16d1 are arranged concentrically. The leads 16b2, 16b3 and 16d2, 16d3 extend in the same direction.
c2 and 16c3 are the lead portions 16b2 and 16b3 described above.
And 16d2, extending in the opposite direction to 16d3,
It can be easily understood that the direction is not limited to the above-described direction as long as the formation of the connection portions 17 and 18 is not hindered. And
The lead portion 16a3 of the coil pattern portion 16a and the lead portion 16c2 of the coil pattern portion 16c are
4 are electrically connected to the through-holes 13a and 14a opened through a connection portion 17 formed by vapor deposition or the like. The lead 16b3 of the coil pattern 16b and the lead 16d2 of the coil pattern 16d are
Conductive connections are made to the through holes 14b and 15a formed in the holes 4 and 15 via the connecting portions 18 formed by vapor deposition or the like.

With this configuration, a two-turn inductively coupled coil, ie, a transformer, as shown in FIG. 3, is completed. As a result, a coil can be formed on an IC chip by using a normal integrated circuit forming technique, so that there is no need to prepare a coil as an external component as in the related art, and the number of components can be reduced. In the above-described embodiment, the transformer formed in the IC chip has been described. However, a simple coil may be formed vertically and concentrically.

FIG. 4 shows another embodiment of the present invention, in which a coil is formed on one interlayer insulating material constituting an IC chip. In FIG. 1, coil pattern portions 22 and 23 are formed above and below an interlayer film 21 such as an oxide film. Then, each of the coil pattern portions 22, 2
3 are formed in the same pattern, are arranged in one direction, are arranged in one direction, and have a large number of crank-shaped wiring portions 22a1, 22a2, 22a3... Open at both ends, and linear wiring portions 23a1, 23a2,. 23a3... Each open end of each of the wiring portions 22a1, 22a2, 22a3,.
Each of the wiring portions 23a1, 23a2, and 23a3 arranged below
.. And the metal connection portions 24 a 1 and 24 in the through holes formed in the interlayer film 21 and the open ends of adjacent different wiring portions.
a2, 24a3 ..., 25a1, 25a2, 25a3
Are connected to each other. For example, the front end 22a11 of the upper wiring portion 22a1 is connected to the front end 23a21 of the lower wiring portion 23a2 by a connecting portion 24a2 formed in a through hole, and the rear end of the upper wiring portion 22a1. Of the lower wiring portion 23a1 is connected to the rear end 23a12 of the lower wiring portion 23a1 by the connection portion 25a1.

Similarly, a front end 22a21 of the upper wiring portion 22a2 is connected to a front end 23a31 of the lower wiring portion 23a3 by a connection portion 24a3, and a rear end of the upper wiring portion 22a2. The portion 22a22 is connected to the rear end 23a22 of the lower wiring portion 23a2 by a connection portion 25a2. The wiring portions 22a1, 22a2, 22a3,.
.., 23a2, 23a3.
a2, 24a3 ... and 25a1, 25a2, 25a3
.. Can form the coil 20 that is arranged in one direction and wound concentrically.

In FIG. 4, the lower wiring portion 23a1 is disposed at the left end of the upper wiring portion and is connected via a connecting portion 24a1.
The wiring part 22a0 connected to the wiring part is a lead part, and the wiring part 23a0 arranged at the right end of the lower wiring part is a lead part, and is connected to another circuit (not shown). Further, although the pattern of the wiring portion shown in FIG. 4 is a combination of a bent crank shape and a straight line, it is needless to say that other shapes may be used.

[0012]

As described above, according to the configuration of the semiconductor integrated circuit device of the present invention, the coil can be incorporated in the IC chip, and it is not necessary to prepare as an external component as in the conventional case. Like the transistor, the resistor, and the capacitor, the coil can be formed by using a semiconductor forming technique.

[Brief description of the drawings]

FIG. 1 is a diagram showing only a coil portion showing an embodiment of a semiconductor integrated circuit device according to the present invention.

FIG. 2 is a partial sectional view of a semiconductor integrated circuit device incorporating the coil portion shown in FIG.

3 shows a circuit diagram of the coil shown in FIGS. 1 and 2. FIG.

FIG. 4 is a diagram showing another embodiment of a semiconductor integrated circuit device according to the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 10 Coil 12 Substrate part 13, 14, 15 Interlayer film 16a, 16b, 16c, 16d, 22, 23 Coil pattern part 16a1, 16b1, 16c1, 16d1 Ring part 17, 18 Connection part 24a1, 24a2, 24a3 Connection part 25a1, 25a2, 25a3 Connection 16a2, 16a3, 16b2, 16b3 Lead 16c2, 16c3, 16d1, 16d3 Lead 22a1, 22a2, 22a3 Wiring 23a1, 23a2, 23a3 Wiring

Claims (6)

[Claims] A plurality of metal wiring pattern portions stacked and arranged via an interlayer insulating film formed on a semiconductor substrate;
A semiconductor integrated circuit device having an inductance comprising: a through-hole portion formed in the interlayer insulating film so as to electrically connect the metal wiring pattern portions formed above and below; 2. The semiconductor integrated circuit device according to claim 1, wherein the inductance has a substantially circular shape in which each of the metal wiring pattern portions is partially cut out, and the inductance is vertically formed via a plurality of the interlayer insulating films. The plurality of arranged metal wiring pattern portions are arranged on concentric circles, one end of the metal wiring pattern portion is connected to the metal wiring pattern portion disposed above via the through hole portion, and the other end is connected to the lower portion. A semiconductor integrated circuit device which is vertically spirally connected to the metal wiring pattern portion disposed in the above through the through hole portion. 3. The semiconductor integrated circuit device according to claim 2, wherein said plurality of upper and lower metal wiring pattern portions are alternately divided into a first inductance element and a second inductance element. The hall part is characterized in that two inductances are formed by connecting the first inductance elements and the second inductance elements are connected, and the two inductance elements are alternately arranged to form a transformer. Semiconductor integrated circuit device. 4. The semiconductor integrated circuit device according to claim 1, wherein the inductance is such that a plurality of the metal wiring pattern portions are formed in two upper and lower stages in one direction with the interlayer insulating film interposed therebetween, and are arranged in an upper stage. Both ends of the metal wiring pattern portion are connected to adjacent different metal wiring pattern portions disposed in the lower stage via the through hole portion, and are formed in a spiral shape concentrically in the direction. Semiconductor integrated circuit device. 5. The semiconductor integrated circuit device according to claim 4, wherein said metal wiring pattern portion has a bent crank shape. 6. The semiconductor integrated circuit device according to claim 4, wherein said metal wiring pattern portion has a linear shape.