JPH10144860A - Semiconductor device and its manufacturing method - Google Patents

Semiconductor device and its manufacturing method

Info

Publication number
JPH10144860A
JPH10144860A JP8315573A JP31557396A JPH10144860A JP H10144860 A JPH10144860 A JP H10144860A JP 8315573 A JP8315573 A JP 8315573A JP 31557396 A JP31557396 A JP 31557396A JP H10144860 A JPH10144860 A JP H10144860A
Authority
JP
Japan
Prior art keywords
bus bar
row
lead
electrode pads
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP8315573A
Other languages
Japanese (ja)
Inventor
Takayuki Maeda
孝幸 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Japan Ltd
Original Assignee
Texas Instruments Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Japan Ltd filed Critical Texas Instruments Japan Ltd
Priority to JP8315573A priority Critical patent/JPH10144860A/en
Publication of JPH10144860A publication Critical patent/JPH10144860A/en
Withdrawn legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826Connecting between the body and an opposite side of the item with respect to the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73215Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To avoid short-circuiting between a bus bar and a conductor wire arranged over the bus bar in a semiconductor device provided with the bus bar. SOLUTION: A lead 3 for a signal line is provided having its inner lead arranged along the row of an electrode pads on an integrated circuit chip 2, and is fixed on the chip 2 through an adhesive tape 2. A bus bar 4 has one or a plurality of arms. The arm extends toward the adhesive tape and supports the bus bar 4 between the row of the electrode pads 2a and the row of the inner leads by being fixed by the adhesive tape. A space is provided between the bus bar 4 and the major plane of the chip, and the height of the bus bar 4 is offset to the side of the chip major plane rather than the height of the inner lead by using the space. Each inner lead is electrically connected with the electrode pad 20 with a conductor wire 5 over the offset bus bar 4. As a result, a sufficient clearance between the bus bar 4 and the conductor wire 5 is ensured.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、バスバーを備えた
LOC(Lead On Chip)構造の半導体装置及びその製造方
法に関し、特にセンターボンドLOC構造の半導体装置
に適用して好適なるものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a LOC (Lead On Chip) structure having a bus bar and a method of manufacturing the same, and is particularly suitable for a semiconductor device having a center bond LOC structure.

【0002】[0002]

【従来の技術】半導体集積回路チップのパッケージング
技術の一つにLOCと呼ばれるものがある。LOCにお
いては、集積回路チップの回路素子及び電極パッドが形
成された面(以下、これを主面という)上にリードフレ
ームのインナーリードが位置され、このインナーリード
と集積回路チップの電極パッドがワイヤボンディングさ
れる。LOC構造のパッケージは、集積回路チップの幅
に対するパッケージの幅の比率を小さくして半導体装置
の小型化を図る上で、有効な技術である。
2. Description of the Related Art One of the packaging techniques for semiconductor integrated circuit chips is called LOC. In the LOC, an inner lead of a lead frame is located on a surface (hereinafter, referred to as a main surface) on which a circuit element and an electrode pad of an integrated circuit chip are formed, and the inner lead and the electrode pad of the integrated circuit chip are connected by wires. Bonded. The LOC structure package is an effective technique for reducing the size of the semiconductor device by reducing the ratio of the width of the package to the width of the integrated circuit chip.

【0003】LOC構造のパッケージにおいては、バス
バーと呼ばれる電源供給用及び接地用のリードを備えた
ものがある。バスバー付きLOC構造の半導体装置にお
けるリードレイアウトの一例を図7に示す。図7には集
積回路チップの主面上に配置したリードが平面的に示さ
れている。集積回路チップ20の主面の中央には、チッ
プ内の回路素子に電気的に接続された電極パッド20a
がほぼ一列に配置されている。このような構造は特にセ
ンターボンドLOCと呼ばれている。各信号線用のリー
ド21は、チップ20の両側面から上記中央の電極パッ
ド20aに向かって延びている。信号線用のリード21
のチップ面上の領域は、インナーリードと呼ばれる。バ
スバー22は電源電位供給用のリードであり、またバス
バー23は接地電位供給用のリードである。バスバー2
2及び23は、電極パッド20aの列の両側に沿って配
置され、電極パッド20aのうち給電用に用意された複
数の電極パッドに対し、バスバー22及び23の複数箇
所で導体ワイヤ24により電気的に接続される。上記信
号線用リード21のインナーリード先端は、このバスバ
ー22又は23を越えて配置される導体ワイヤにより各
電極パッド20aにボンディングされる。
Some LOC-structured packages have power supply and ground leads called bus bars. FIG. 7 shows an example of a lead layout in a semiconductor device having an LOC structure with a bus bar. FIG. 7 is a plan view showing the leads arranged on the main surface of the integrated circuit chip. An electrode pad 20a electrically connected to a circuit element in the chip is provided at the center of the main surface of the integrated circuit chip 20.
Are arranged substantially in a line. Such a structure is particularly called a center bond LOC. The leads 21 for each signal line extend from both side surfaces of the chip 20 toward the central electrode pad 20a. Lead 21 for signal line
The area on the chip surface is called an inner lead. The bus bar 22 is a lead for supplying a power supply potential, and the bus bar 23 is a lead for supplying a ground potential. Bus bar 2
2 and 23 are arranged along both sides of the row of the electrode pads 20a, and are electrically connected to the plurality of electrode pads of the electrode pads 20a prepared for power supply by the conductor wires 24 at a plurality of locations of the bus bars 22 and 23. Connected to. The tip of the inner lead of the signal line lead 21 is bonded to each electrode pad 20a by a conductor wire disposed over the bus bar 22 or 23.

【0004】チップ内の集積回路上の複数の箇所に電源
電圧及び接地電圧を与えることにより、回路内のインピ
ーダンスを抑えることがバスバーを配置する目的であ
る。すなわち、チップ内の回路で引き回される給電用の
配線よりも、チップ外に配置される低抵抗のバスバーの
ほうが、インピーダンスを下げる上で有効に働く。バス
バー22及び23の両端は、信号線用のリード21と同
様にチップの側面から外側に延び、さらに下方に曲げら
れて、外部基板のランド上に接触可能にされる。このよ
うなバスバーの外部基板への接続側は、信号線用のリー
ドの場合と同じように、アウターリードと呼ばれる。上
記信号線用のリード21、バスバー22及び23は、リ
ードフレームの形で与えられ、集積回路チップの主面上
に接着された後、不要部分を切断されることによって形
成される。
An object of arranging a bus bar is to apply a power supply voltage and a ground voltage to a plurality of points on an integrated circuit in a chip to suppress impedance in the circuit. That is, the low-resistance bus bar disposed outside the chip works more effectively in lowering the impedance than the power supply wiring routed in the circuit in the chip. Both ends of the bus bars 22 and 23 extend outward from the side surface of the chip similarly to the leads 21 for the signal lines, and are bent further downward to be able to contact the lands of the external substrate. The connection side of such a bus bar to the external board is called an outer lead, as in the case of the signal line lead. The signal line leads 21 and the bus bars 22 and 23 are provided in the form of a lead frame, and are formed by cutting unnecessary portions after being adhered to the main surface of the integrated circuit chip.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、上記バ
スバー付きLOC構造の半導体装置において、上記信号
線用のリードと電極パッドとを接続する導体ワイヤは、
バスバーを跨いで配置されなければならない。従って、
この導体ワイヤが樹脂封止までの他の工程やその樹脂封
止の際にバスバーに接触し、ショートしてしまうという
問題を引き起こす可能性がある。近年の半導体パッケー
ジの薄型化の要求に伴い、導体ワイヤの接触の問題がよ
り深刻になってきている。このような問題を回避するた
めには、バスバーと導体ワイヤとの間に別の部材を介在
させるか、あるいはバスバーと導体ワイヤとの間のクリ
アランスを十分に確保する必要が生じる。
However, in the semiconductor device having the LOC structure with a bus bar, the conductor wire for connecting the signal line lead and the electrode pad includes:
Must be placed across the busbar. Therefore,
There is a possibility that the conductor wire may come into contact with the bus bar during another process up to the resin sealing or during the resin sealing, causing a problem of causing a short circuit. With the recent demand for thinner semiconductor packages, the problem of contact between conductor wires has become more serious. In order to avoid such a problem, it is necessary to interpose another member between the bus bar and the conductor wire, or to secure a sufficient clearance between the bus bar and the conductor wire.

【0006】従来、前者を実現するものとして、バスバ
ーの表面にポリイミド等の絶縁材料を塗布することによ
って、バスバーと導体ワイヤとが電気的に干渉し合わな
いようにしたものがある。しかしながら、バスバーにこ
のような絶縁材料を塗布する工程は、リードフレームの
製造コスト、延いては半導体装置のコストを引き上げ
る。また後者を実現するものとして、バスバーの一部又
は全部を、エッチング又はプレスによりリードフレーム
の他の部分よりも薄く加工することによって、バスバー
と導体ワイヤとの間のクリアランスを確保できるように
したものがある。しかし、エッチングによりバスバーを
所望の薄さに安定して加工するためには、リードフレー
ムのエッチングのためにいくつかの工程を追加しなけれ
ばならず、結局、製造コストの上昇を招く。また、プレ
スによる加工では、うねりを生じさせずに長尺なバスバ
ーを薄く加工することは難しく、リードフレームの製造
歩留まりを低下させる恐れがある。従って、安価にかつ
歩留まり良くリードフレームを製造し、上記バスバーと
導体ワイヤとの間のショートを回避できる技術の確立が
望まれていた。
[0006] Conventionally, as a method for realizing the former, there is a method in which an insulating material such as polyimide is applied to the surface of a bus bar so that the bus bar and the conductor wire do not interfere with each other. However, the step of applying such an insulating material to the bus bar increases the manufacturing cost of the lead frame, and in turn, the cost of the semiconductor device. In order to realize the latter, a part or the whole of the bus bar is processed to be thinner than other parts of the lead frame by etching or pressing so that a clearance between the bus bar and the conductor wire can be secured. There is. However, in order to stably process the bus bar to a desired thickness by etching, it is necessary to add some steps for etching the lead frame, which eventually increases the manufacturing cost. Further, in processing by pressing, it is difficult to thin a long bus bar without causing undulation, and there is a possibility that the production yield of a lead frame may be reduced. Therefore, it has been desired to establish a technique for manufacturing a lead frame at a low cost and with a high yield and avoiding a short circuit between the bus bar and the conductor wire.

【0007】本発明の目的は、バスバー上に絶縁材料を
塗布することなく、バスバーと導体ワイヤとの間のショ
ートを回避できる半導体装置及びその製造方法を提供す
ることである。
An object of the present invention is to provide a semiconductor device capable of avoiding a short circuit between a bus bar and a conductor wire without applying an insulating material on the bus bar, and a method of manufacturing the same.

【0008】本発明の別の目的は、上記目的を達成する
半導体装置を、製造コストの増加を伴うことなく実現す
ることである。
Another object of the present invention is to realize a semiconductor device which achieves the above object without increasing the manufacturing cost.

【0009】[0009]

【課題を解決するための手段】本発明は、半導体集積回
路チップの主面上にリードフレームのインナーリードを
配置したLOC構造の半導体装置に適用して好適なるも
のである。信号線用のリードは、そのインナーリードが
集積回路チップ上の電極パッドの列に沿うように配置さ
れ、接着層、望ましくは接着テープを介して該チップ上
に固定される。バスバーは、1又は複数の腕を有する。
この腕は、上記接着層に向かって延び、該接着層に固定
されることによって、バスバーを上記電極パッドの列及
び上記インナーリードの列の間に支承する。バスバーと
チップ主面との間には隙間があり、該隙間を利用してバ
スバーの高さは、インナーリードの高さよりもチップ主
面側に低く設置される。リードフレームの成型時に、信
号線用のリードに対しバスバーの位置を押し下げ加工す
ることによって、このようなバスバーの配置を実現する
ことが好ましい。この低く設置されたバスバーを越え
て、各インナーリードと電極パッドとが導体ワイヤによ
り電気的に接続される。この結果バスバーと導体ワイヤ
との間に、十分なクリアランスが確保される。インナー
リード、バスバー及び導体ワイヤを樹脂により封止する
ことによって、上記クリアランスが永続的に維持され
る。
The present invention is suitable for application to a semiconductor device having a LOC structure in which inner leads of a lead frame are arranged on a main surface of a semiconductor integrated circuit chip. The signal line leads are arranged such that the inner leads are arranged along the rows of the electrode pads on the integrated circuit chip, and are fixed on the chip via an adhesive layer, preferably an adhesive tape. The bus bar has one or more arms.
The arm extends toward the adhesive layer and is fixed to the adhesive layer to support a bus bar between the row of the electrode pads and the row of the inner leads. There is a gap between the bus bar and the chip main surface, and the height of the bus bar is set lower on the chip main surface side than the height of the inner lead by using the gap. At the time of molding the lead frame, it is preferable to realize such an arrangement of the bus bar by pressing down the position of the bus bar with respect to the signal line lead. The inner leads and the electrode pads are electrically connected to each other by conductor wires over the bus bar which is set low. As a result, a sufficient clearance is secured between the bus bar and the conductor wire. By sealing the inner lead, the bus bar, and the conductor wire with the resin, the above clearance is permanently maintained.

【0010】本発明において上記バスバーの腕を、バス
バーの長手方向に沿って複数設け、複数箇所でバスバー
を支持することが、樹脂封止前のチップ上におけるバス
バーの安定性を得るために好ましい。この場合に、バス
バーの腕のうちのいくつかを、上記半導体集積回路チッ
プの外側に延出し、バスバーに対する電源供給用のもの
とすることができる。
In the present invention, it is preferable to provide a plurality of arms of the bus bar along the longitudinal direction of the bus bar and to support the bus bar at a plurality of positions in order to obtain the stability of the bus bar on the chip before resin sealing. In this case, some of the arms of the bus bar may be extended outside the semiconductor integrated circuit chip to supply power to the bus bar.

【0011】本発明の適用範囲は、センターボンド型の
LOC構造の半導体装置に限られないが、そのような半
導体装置に適用して好適なるものである。センターボン
ド型LOC構造においては、半導体集積回路チップの中
央に電極パッドの列があり、その両側に信号線用のリー
ドのインナーリードの列が延びてきている。2本のバス
バーは、各インナーリードの列と電極パッドの列との間
に位置し、その腕によってそれぞれの側のインナーリー
ドを固定する接着層に対し固定される。各バスバーはイ
ンナーリードよりもチップ主面側の低い位置に設置さ
れ、バスバーを越えて配置される導体ワイヤとのクリア
ランスが十分に確保される。
The scope of application of the present invention is not limited to a semiconductor device having a center-bond type LOC structure, but is suitable for application to such a semiconductor device. In the center bond type LOC structure, a row of electrode pads is provided at the center of a semiconductor integrated circuit chip, and a row of inner leads of signal line leads is extended on both sides thereof. The two bus bars are located between the rows of the inner leads and the rows of the electrode pads, and are fixed by their arms to an adhesive layer that fixes the inner leads on each side. Each bus bar is installed at a position lower than the inner lead on the chip main surface side, and a sufficient clearance with a conductor wire arranged beyond the bus bar is secured.

【0012】[0012]

【発明の実施の形態】以下、本発明の一実施形態につい
て説明する。図1〜図3に本発明を適用した半導体装置
を示す。本半導体装置は、センターボンドLOC構造の
メモリ装置(DRAM)である。図1においてメモリ装
置1は、集積回路チップ2の主面上にリードフレームに
より与えられる信号線用リード3及びバスバー4を備え
る。集積回路チップ2は、その主面の中央一列に多数の
電極パッド2aを備えている。多数の信号線用リード3
は、この電極パッド2aの列の両側に配置され、それぞ
れがチップの中央から外側に向かって延びている。各信
号線用リード3の電極パッド2a側の端部はインナーリ
ードと呼ばれ、導体ワイヤ5を介していずれかの電極パ
ッド2aにワイヤボンディングされることにより電気的
に接続される。各信号線用リード3の反対側の端部はア
ウターリードと呼ばれ、パッケージの側面から外側に出
て、外部基板に実装するために折り曲げられる。各信号
線用リード3は、それらのインナーリードの列下面に沿
って延びるポリイミド製の接着テープ6によって、集積
回路チップ2の主面上に固定される。
DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below. 1 to 3 show a semiconductor device to which the present invention is applied. This semiconductor device is a memory device (DRAM) having a center bond LOC structure. In FIG. 1, a memory device 1 includes signal line leads 3 and bus bars 4 provided by a lead frame on a main surface of an integrated circuit chip 2. The integrated circuit chip 2 has a large number of electrode pads 2a in a line in the center of the main surface. Many signal wire leads 3
Are arranged on both sides of the row of the electrode pads 2a, and each extends outward from the center of the chip. The end of each signal line lead 3 on the electrode pad 2a side is called an inner lead, and is electrically connected to any one of the electrode pads 2a via a conductor wire 5 by wire bonding. The opposite end of each signal line lead 3 is called an outer lead, extends outward from the side surface of the package, and is bent to be mounted on an external substrate. Each signal line lead 3 is fixed on the main surface of the integrated circuit chip 2 by a polyimide adhesive tape 6 extending along the lower surface of the row of the inner leads.

【0013】メモリ装置1は、上記信号線用リード3と
共にリードフレームによって与えられる2本のバスバー
4を備える。2本のバスバーのうち一方は、集積回路チ
ップ2に電源電位を供給するためのものであり、他方は
接地電位を供給するためのものである。各バスバー4
は、電極パッド2aの列と信号線用リード3のインナー
リードの列の間に延びて配置されている。各バスバー4
からはいくつかの脚4aがチップの外側に向かって延び
ており、信号線用リード3に沿ってこれと同様に、チッ
プの側面から外側に出ている。この脚4aの先端は、信
号線用リード3のアウターリードと同様に折り曲げら
れ、外部基板の電源供給用ランド上に接続される。
The memory device 1 includes two bus bars 4 provided by a lead frame together with the signal line leads 3. One of the two bus bars is for supplying a power supply potential to the integrated circuit chip 2, and the other is for supplying a ground potential. Each bus bar 4
Are arranged to extend between the row of the electrode pads 2a and the row of the inner leads of the signal line leads 3. Each bus bar 4
Some legs 4a extend toward the outside of the chip, and similarly extend outward from the side surface of the chip along the signal line leads 3. The tip of the leg 4a is bent in the same manner as the outer lead of the signal line lead 3, and is connected to the power supply land on the external board.

【0014】上記各バスバー4は、その長手方向に沿っ
て適宜間隔で配置された複数の腕4bを有する。腕4b
は、バスバー4の側面から外側、すなわち信号線用リー
ド3のインナーリードの列側に延び、これらインナーリ
ードと並んで接着テープ6上に貼り付けられる。上記バ
スバーの脚4aも接着テープ6上に貼り付けられてい
る。すなわち各バスバー4は、複数の腕4b及び脚4a
によって集積回路チップ2上に支承されている。
Each of the bus bars 4 has a plurality of arms 4b arranged at appropriate intervals along the longitudinal direction. Arm 4b
Extend from the side surface of the bus bar 4 to the outside, that is, to the row side of the inner leads of the signal line leads 3, and are pasted on the adhesive tape 6 alongside the inner leads. The legs 4a of the bus bar are also pasted on the adhesive tape 6. That is, each bus bar 4 includes a plurality of arms 4b and legs 4a.
On the integrated circuit chip 2.

【0015】さらに、図3において特に明らかにされて
いるように、バスバー4は、その表面が上記インナーリ
ードの列が形成する面よりもチップ主面側に位置され
る。リードフレームの製造工程において、後で説明する
押し切りの方法でバスバー4の箇所を、リードフレーム
が形成する面よりも一段押し下げることによって、上記
バスバー4の配置を実現する。リードフレームを接着テ
ープ6によって集積回路チップ2の主面に実装すると、
該接着テープ6の厚み分だけリードフレームはチップ主
面より浮いた状態となる。このリードフレームの浮き上
がり量(図3における”H”)を利用して、上記リード
面からオフセットしたバスバー4の配置が可能になる。
電極パッド2aと信号線用リード3のインナーリードと
の間を接続する導体ワイヤ5は、このオフセットされた
バスバー4を越えて配置される。また、いくつかの電極
パッド2aから延びる導体ワイヤ5は、バスバー4の腕
4bの位置でボンディングされる。一つの実施例におい
て、上記接着テープ6の厚さは80μmであり、厚さ1
25μmのリードフレームにおけるバスバー4のオフセ
ット量Fは40+20,-10μmである。
Further, as is particularly apparent in FIG. 3, the bus bar 4 has its surface located closer to the chip main surface than the surface formed by the rows of the inner leads. In the manufacturing process of the lead frame, the arrangement of the bus bar 4 is realized by pushing down the location of the bus bar 4 by one step from the surface formed by the lead frame by a pushing and cutting method described later. When the lead frame is mounted on the main surface of the integrated circuit chip 2 with the adhesive tape 6,
The lead frame is suspended above the chip main surface by the thickness of the adhesive tape 6. Utilizing the lift amount of the lead frame ("H" in FIG. 3), the bus bar 4 offset from the lead surface can be arranged.
The conductor wire 5 connecting between the electrode pad 2a and the inner lead of the signal line lead 3 is disposed beyond the offset bus bar 4. The conductor wires 5 extending from some of the electrode pads 2a are bonded at the positions of the arms 4b of the bus bar 4. In one embodiment, the adhesive tape 6 has a thickness of 80 μm and a thickness of 1 μm.
The offset amount F of the bus bar 4 in the 25 μm lead frame is 40 +20, −10 μm.

【0016】上記メモリ装置1の製造工程において、図
4に示すようなリードフレームが形成される。リードフ
レームは、金型による打ち抜き又はエッチング法により
形成される信号線用リード3の列及び一対のバスバー
4、4を含んでいる。リードフレーム形成の次の工程
で、バスバー4にオフセットが与えられる。図5は金型
による押し切りの方法を用いて、バスバーをオフセット
させる工程を概念的に示したものである。同図(A)に
示すように、バスバー4をその腕4bの位置でダイス1
0に挟み込み、同図(B)のようにポンチ11をバスバ
ー4上に下ろすことによってオフセットを形成する。図
6にはバスバーのオフセット成型前の状態及び成型後の
状態を概念的に示した。
In the manufacturing process of the memory device 1, a lead frame as shown in FIG. 4 is formed. The lead frame includes a row of signal line leads 3 and a pair of bus bars 4 formed by punching or etching with a die. In the next step of forming the lead frame, an offset is given to the bus bar 4. FIG. 5 conceptually shows a process of offsetting a bus bar by using a press-cutting method using a die. As shown in FIG. 2A, the bus bar 4 is held by the dice 1 at the position of the arm 4b.
0, and the offset is formed by lowering the punch 11 on the bus bar 4 as shown in FIG. FIG. 6 conceptually shows a state before and after the offset molding of the bus bar.

【0017】次にリードフレームの裏面に、接着テープ
6が貼り付けられる。図4に示すように、接着テープ6
は、インナーリードの列の箇所、及びチップの四隅に対
応する箇所に設けられる。別の工程で製造された集積回
路チップの主面上に、この接着テープを介してリードフ
レームを貼り付ける。図4には集積回路チップ2の外形
線が示されており、リードフレームにおける各信号線用
リード3のアウターリードは、チップの外形線を越えて
その両側に延びている。次に、各信号線用リード3のイ
ンナーリード及び各バスバー4に対し、電極パッド2a
とのワイヤボンディングが施される。インナーリードへ
のワイヤボンディングは、上記バスバー4を越えて施さ
れる。またバスバー4へのワイヤボンディングは、その
腕4bの位置でなされる。その後トランスファーモール
ドにより集積回路チップ2は、リードフレームと共に封
止される。固化した樹脂のバリ取りを行なった後、リー
ドフレームのアウターリードを枠から切り離し、外部基
板に実装できるように曲げる。以上の工程を経て、メモ
リ装置1が組み立てられる。
Next, an adhesive tape 6 is attached to the back surface of the lead frame. As shown in FIG.
Are provided at locations corresponding to the rows of the inner leads and at locations corresponding to the four corners of the chip. A lead frame is attached to the main surface of the integrated circuit chip manufactured in another process via the adhesive tape. FIG. 4 shows the outline of the integrated circuit chip 2, and the outer leads of the signal line leads 3 in the lead frame extend to both sides beyond the outline of the chip. Next, an electrode pad 2a is applied to the inner lead of each signal line lead 3 and each bus bar 4.
Wire bonding is performed. The wire bonding to the inner leads is performed beyond the bus bar 4. Wire bonding to the bus bar 4 is performed at the position of the arm 4b. Thereafter, the integrated circuit chip 2 is sealed together with the lead frame by transfer molding. After deburring the solidified resin, the outer leads of the lead frame are separated from the frame and bent so that they can be mounted on an external substrate. Through the above steps, the memory device 1 is assembled.

【0018】以上、本発明をセンターボンドLOC構造
のメモリ装置に適用した例を示した。しかしながら本発
明は上記実施形態に示した構造に限らず、バスバーを越
えてインナーリードと電極パッドとを導体ワイヤにより
電気的に接続する構造の半導体装置に広く適用できるこ
とは明らかである。例えば、上記実施形態に示した構造
では、電極パッドがチップの中央に1列に並んだ構造で
あったが、並行に2列あるいは3列以上となるように構
成しても構わない。また、電極パッドの位置は、チップ
の主面の中央に位置するセンターボンドLOCに限定さ
れることなく、チップ中央からどちらか側にずれていて
も構わず、そのような場合は、リードフレームが左右対
称ではなくなるが、電極パッドの列を挟んで両側にバス
バー、さらにその外側にインナーリードが位置するよう
にすれば良い。更に、電極パッドの両側にバスバーが必
要ない場合であれば、電極パッドの列の片側に並んで1
つ又は2つ以上のバスバーを配置して、さらにその外側
にインナーリードを配置するようにすれば良い。
An example in which the present invention is applied to a memory device having a center bond LOC structure has been described. However, it is clear that the present invention is not limited to the structure shown in the above embodiment, but can be widely applied to a semiconductor device having a structure in which an inner lead and an electrode pad are electrically connected by a conductor wire over a bus bar. For example, in the structure shown in the above embodiment, the electrode pads are arranged in one line at the center of the chip. However, the electrode pads may be arranged in two or three or more lines in parallel. Further, the position of the electrode pad is not limited to the center bond LOC located at the center of the main surface of the chip, but may be shifted to either side from the center of the chip. Although it is not symmetrical, the bus bars may be located on both sides of the row of electrode pads, and the inner leads may be located outside the bus bars. Further, if bus bars are not required on both sides of the electrode pad, one side of the row of the electrode pad may be arranged.
One or two or more busbars may be arranged, and the inner leads may be arranged further outside.

【0019】[0019]

【発明の効果】本発明に係る半導体装置においては、バ
スバーがインナーリードの面よりもチップ面側に配置さ
れているため、バスバーとこれを越えて配置される導体
ワイヤとの間に十分なクリアランスが確保される。これ
により樹脂封止時の圧力によってバスバーと導体ワイヤ
とがショートする可能性が極めて少なくなる。
In the semiconductor device according to the present invention, since the bus bar is disposed on the chip surface side with respect to the inner lead surface, a sufficient clearance is provided between the bus bar and the conductor wire disposed beyond the bus bar. Is secured. Thereby, the possibility that the bus bar and the conductor wire are short-circuited by the pressure at the time of resin sealing is extremely reduced.

【0020】また、上記バスバーと導体ワイヤとの間の
ショートを回避するために、高価な絶縁材料を用いた
り、歩留まりを低下させるようなことなく、安価に半導
体装置を製造することができる。すなわちリードフレー
ムの形成工程においてバスバーにオフセットを与えるこ
とは、特別な製造装置を必要とせずに容易に実現でき、
半導体装置の生産性に影響を与えない。
Further, in order to avoid a short circuit between the bus bar and the conductor wire, a semiconductor device can be manufactured at low cost without using an expensive insulating material or reducing the yield. That is, giving an offset to the bus bar in the process of forming the lead frame can be easily realized without requiring a special manufacturing device,
Does not affect the productivity of semiconductor devices.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る半導体装置の一実施形態における
斜視図であり、パッケージを除いてリードフレームのチ
ップ上の状態を示した図である。
FIG. 1 is a perspective view of an embodiment of a semiconductor device according to the present invention, showing a state of a lead frame on a chip except for a package.

【図2】図1の一部を拡大して示す図である。FIG. 2 is an enlarged view showing a part of FIG. 1;

【図3】バスバーのオフセットの状態を示した半導体装
置の断面図である。
FIG. 3 is a cross-sectional view of the semiconductor device showing an offset state of a bus bar.

【図4】本発明に係る半導体装置において用いられるリ
ードフレームの一例を示す平面図である。
FIG. 4 is a plan view showing an example of a lead frame used in the semiconductor device according to the present invention.

【図5】バスバーの加工方法を示す図である。FIG. 5 is a diagram showing a bus bar processing method.

【図6】バスバーの加工の前後の状態を示す斜視図であ
る。
FIG. 6 is a perspective view showing a state before and after processing of a bus bar.

【図7】従来の半導体装置におけるリードの一配置態様
を示す平面図である。
FIG. 7 is a plan view showing one arrangement of leads in a conventional semiconductor device.

【符号の説明】[Explanation of symbols]

1 半導体装置 2 集積回路チップ 2a 電極パッド 3 信号線用リード 4 バスバー 5 導体ワイヤ 6 接着テープ H 接着テープ厚さ F オフセット量 DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Integrated circuit chip 2a Electrode pad 3 Signal line lead 4 Bus bar 5 Conductor wire 6 Adhesive tape H Adhesive tape thickness F Offset amount

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 回路形成面側に電極パッドの列を備える
半導体集積回路チップと、 上記電極パッドの列に沿って配置されるインナーリード
の列を有し、接着層を介して上記回路形成面上に固定さ
れる信号線用のリードと、 上記接着層に固定された腕を有し、該腕によって上記電
極パッドの列及び上記インナーリードの列の間で支承さ
れるバスバーであって、その表面が上記インナーリード
の列が形成する面よりも上記半導体集積回路チップ側に
位置するものと、 上記バスバーを越えて上記各インナーリードと上記各電
極パッドとを電気的に接続する導体ワイヤと、 すくなくとも上記インナーリード、バスバー及び導体ワ
イヤを封止する樹脂と、を備えた半導体装置。
1. A semiconductor integrated circuit chip having a row of electrode pads on a circuit forming surface side, and a row of inner leads arranged along the row of electrode pads, wherein the circuit forming surface is provided via an adhesive layer. A bus bar having a signal line lead fixed thereon and an arm fixed to the adhesive layer, the arm being supported between the row of the electrode pads and the row of the inner leads by the arm, A surface whose surface is located closer to the semiconductor integrated circuit chip side than a surface formed by the rows of the inner leads, a conductor wire that electrically connects the inner leads and the electrode pads beyond the bus bar, A semiconductor device including at least a resin for sealing the inner lead, the bus bar, and the conductor wire.
【請求項2】 上記バスバーは、その腕の位置で上記半
導体集積回路チップ側に押し下げられて形成された請求
項1の半導体装置。
2. The semiconductor device according to claim 1, wherein said bus bar is formed by being pushed down toward said semiconductor integrated circuit chip at the position of its arm.
【請求項3】 上記接着層が上記インナーリードの列に
沿って設けられる接着テープである請求項1又は2の半
導体装置。
3. The semiconductor device according to claim 1, wherein said adhesive layer is an adhesive tape provided along a row of said inner leads.
【請求項4】 上記バスバーの腕を、該バスバーの長手
方向に沿って複数設けた請求項1、2又は3の半導体装
置。
4. The semiconductor device according to claim 1, wherein a plurality of arms of said bus bar are provided along a longitudinal direction of said bus bar.
【請求項5】 上記バスバーの腕のうちのいくつかを、
上記半導体集積回路チップの外側に延出し、バスバーに
対する電源供給用のものとした請求項4記載の半導体装
置。
5. The method of claim 5, wherein some of the arms of the busbar are
5. The semiconductor device according to claim 4, wherein the semiconductor device extends outside the semiconductor integrated circuit chip to supply power to a bus bar.
【請求項6】 回路形成面側に電極パッドの列を備える
半導体集積回路チップと、 上記電極パッドの列に沿ってその両側に配置される一対
のインナーリードの列を有し、接着層を介して上記回路
形成面上に固定される信号線用のリードと、 上記接着層に固定された腕を有し、該腕によって上記電
極パッドの列及び上記各インナーリードの列の間でそれ
ぞれ支承される一対のバスバーであって、その表面が上
記インナーリードの列が形成する面よりも上記半導体集
積回路チップ側に位置するものと、 上記各バスバーを越えて上記各インナーリードと上記各
電極パッドとを電気的に接続する導体ワイヤと、 すくなくとも上記インナーリード、バスバー及び導体ワ
イヤを封止する樹脂と、を備えた半導体装置。
6. A semiconductor integrated circuit chip having a row of electrode pads on the circuit forming surface side, and a pair of inner leads arranged on both sides of the electrode pad along the row of electrode pads. A signal line lead fixed on the circuit forming surface, and an arm fixed to the adhesive layer. The arm is supported by the arm between the row of electrode pads and the row of each inner lead. A pair of bus bars, the surfaces of which are located closer to the semiconductor integrated circuit chip than the surface formed by the rows of the inner leads, and the inner leads and the electrode pads which extend beyond the bus bars. A semiconductor device comprising: a conductive wire for electrically connecting the conductive wires; and at least a resin for sealing the inner lead, the bus bar, and the conductive wire.
【請求項7】 回路形成面側に電極パッドの列を備える
半導体集積回路チップを形成する工程と、 上記電極パッドの列に沿って配置されるインナーリード
の列を有する信号線用のリード、該インナーリードの列
に沿ってその前方に配置されるバスバー、及び該バスバ
ーから延びて上記インナーリードの列に並んで配置され
るバスバーの腕を含むリードフレームを形成する工程
と、 上記バスバーの腕の位置で、該バスバーをリードフレー
ムの上記半導体集積回路チップに対する実装面側に押し
下げる工程と、 上記インナーリードの列の並びに沿って上記リードフレ
ームの実装面側に、接着テープを接着する工程と、 上記リードフレームを上記接着テープによって上記半導
体集積回路チップ上に固定する工程と、 上記バスバーを越えて上記電極パッドと上記各インナー
リードとを導体ワイヤにより電気的に接続する工程と、 少なくとも上記インナーリード、バスバー及び導体ワイ
ヤを樹脂により封止する工程と、を含む半導体装置の製
造方法。
7. A step of forming a semiconductor integrated circuit chip having a row of electrode pads on a circuit forming surface side; and a signal line lead having a row of inner leads arranged along the row of electrode pads. Forming a bus bar disposed in front of the bus bar along the inner lead row, and a lead frame including the bus bar arm extending from the bus bar and disposed in the inner lead row; and At the position, pushing down the bus bar to the mounting surface side of the lead frame for the semiconductor integrated circuit chip; adhering an adhesive tape to the mounting surface side of the lead frame along the row of the inner leads; Fixing a lead frame on the semiconductor integrated circuit chip with the adhesive tape; and A step of connecting the head and the respective inner leads electrically by a conductor wire, a method of manufacturing a semiconductor device including a step of sealing at least the inner leads, bus bars and the conductive wires resin.
JP8315573A 1996-11-12 1996-11-12 Semiconductor device and its manufacturing method Withdrawn JPH10144860A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8315573A JPH10144860A (en) 1996-11-12 1996-11-12 Semiconductor device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8315573A JPH10144860A (en) 1996-11-12 1996-11-12 Semiconductor device and its manufacturing method

Publications (1)

Publication Number Publication Date
JPH10144860A true JPH10144860A (en) 1998-05-29

Family

ID=18066978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8315573A Withdrawn JPH10144860A (en) 1996-11-12 1996-11-12 Semiconductor device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPH10144860A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016004887A (en) * 2014-06-17 2016-01-12 Shマテリアル株式会社 Lead frame, and method of manufacturing lead frame

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016004887A (en) * 2014-06-17 2016-01-12 Shマテリアル株式会社 Lead frame, and method of manufacturing lead frame

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