JPH10144584A - Mask membrane for x-ray lithography - Google Patents
Mask membrane for x-ray lithographyInfo
- Publication number
- JPH10144584A JPH10144584A JP29622296A JP29622296A JPH10144584A JP H10144584 A JPH10144584 A JP H10144584A JP 29622296 A JP29622296 A JP 29622296A JP 29622296 A JP29622296 A JP 29622296A JP H10144584 A JPH10144584 A JP H10144584A
- Authority
- JP
- Japan
- Prior art keywords
- film
- stress
- diamond
- membrane
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、Ｘ線リソグラフィ
用マスクメンブレンに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask membrane for X-ray lithography.
【０００２】[0002]
【従来の技術】半導体デバイス作製におけるパターン形
成の微細化に伴い、将来のリソグラフィ技術としてＸ線
リソグラフィ技術が有望視されている。一般的なＸ線リ
ソグラフィ用マスク基板の構造を図３に示す。図３のマ
スク基板は、吸収体パターン１５、Ｘ線透過膜（以下、
メンブレンと記す）１６、支持基板１３、裏面保護膜１
４よりなるものである。2. Description of the Related Art Along with miniaturization of pattern formation in semiconductor device fabrication, X-ray lithography technology is expected to be a promising lithography technology in the future. FIG. 3 shows the structure of a general mask substrate for X-ray lithography. The mask substrate of FIG. 3 includes an absorber pattern 15 and an X-ray transmission film (hereinafter, referred to as an X-ray transmission film).
16, support substrate 13, back surface protective film 1)
4
【０００３】ここでメンブレンに要求される特性を以下
に示す。 １）機械的強度が高いこと。 ２）高エネルギー電子線やシンクロトロン放射光（以
下、ＳＯＲ光と略記する）のような高エネルギービーム
の照射に耐えること。 ３）高精度なアライメントに必要な可視光透過性が高い
こと。 従来、Ｘ線リソグラフィ用マスクメンブレン材料として
は、窒化硼素（ＢＮ）、ボロンドープシリコン、窒化珪
素（ＳｉＮ）、炭化珪素（ＳｉＣ）、炭化窒化珪素（Ｓ
ｉＣＮ）、ダイヤモンド等が提案されている。なかでも
結晶性の高いダイヤモンドは１）〜３）の特性に優れる
事から、Ｘ線リソグラフィ用マスクメンブレン材料とし
て最適と考えられる。Here, the characteristics required for the membrane are shown below. 1) High mechanical strength. 2) Withstand irradiation of a high energy beam such as a high energy electron beam or synchrotron radiation (hereinafter abbreviated as SOR light). 3) High visible light transmittance required for high-precision alignment. Conventionally, mask membrane materials for X-ray lithography include boron nitride (BN), boron-doped silicon, silicon nitride (SiN), silicon carbide (SiC), and silicon carbonitride (S
iCN), diamond and the like have been proposed. Above all, diamond having high crystallinity is considered to be most suitable as a mask membrane material for X-ray lithography because it has excellent characteristics 1) to 3).
【０００４】一方、メンブレンはＸ線の吸収を最小限に
抑えるために、１〜２μｍ厚の自立膜である必要があ
る。したがってメンブレン作製のためには、メンブレン
の膜応力が 0.0〜 5.0×109dyn/cm2（引っ張り）でなけ
ればならないことが知られている。On the other hand, the membrane needs to be a free-standing film having a thickness of 1 to 2 μm in order to minimize the absorption of X-rays. Therefore, it is known that in order to produce a membrane, the membrane stress of the membrane must be 0.0 to 5.0 × 10 9 dyn / cm 2 (tensile).
【０００５】[0005]
【発明が解決しようとする課題】通常、ダイヤモンドの
製膜方法としては、１）ＤＣ、アーク放電、２）ＤＣ、
グロー放電、３）燃焼炎、４）高周波（13.56MHz）、
５）マイクロ波（2.45 GHz）、６）熱フィラメント等が
挙げられる。しかしながら、これらの製膜方法では、い
ずれもプラズマを利用していることから、多くの製膜パ
ラメータがプラズマ状態に互いに関係し合うため、所望
の膜を作製するのに必要なプラズマを得ることが困難で
ある。特に機械的強度、ＳＯＲ光照射耐性、可視光透過
性を高めるための高い結晶性と、メンブレン作製のため
の膜応力との、二つの特性を同時に満足させることは極
めて困難であった。Generally, diamond film forming methods include 1) DC, arc discharge, 2) DC,
Glow discharge, 3) combustion flame, 4) high frequency (13.56 MHz),
5) microwave (2.45 GHz); 6) hot filament. However, since all of these film forming methods use plasma, many film forming parameters are related to each other in the plasma state, so that it is possible to obtain plasma necessary for forming a desired film. Have difficulty. In particular, it has been extremely difficult to simultaneously satisfy the two characteristics of high crystallinity for enhancing mechanical strength, SOR light irradiation resistance, and visible light transmittance, and film stress for fabricating a membrane.
【０００６】[0006]
【課題を解決するための手段】本発明者らは上記問題点
に鑑み、鋭意検討を重ねた結果、気相合成ダイヤモンド
膜を主たるメンブレンの構成材料として、その片面もし
くは両面に応力補正のための膜を形成して積層構造とす
ることにより、上記の二特性を同時に満足できることに
着目し、本発明を完成させた。すなわち本発明は、気相
合成ダイヤモンド膜の片面もしくは両面に応力補正のた
めの膜を形成した積層構造からなるＸ線リソグラフィ用
マスクメンブレンを要旨とするものである。Means for Solving the Problems In view of the above problems, the present inventors have made intensive studies and as a result, have found that a gas-phase synthetic diamond film is used as a main constituent material of a membrane for correcting stress on one or both surfaces. By focusing on the fact that the above two characteristics can be simultaneously satisfied by forming a film to form a laminated structure, the present invention has been completed. That is, the gist of the present invention is a mask membrane for X-ray lithography having a laminated structure in which a film for stress correction is formed on one or both surfaces of a vapor-phase synthetic diamond film.
【０００７】[0007]
【発明の実施の形態】以下に、これを図について詳述す
る。図１、図２は、本発明によるＸ線リソグラフィ用マ
スク基板の構造を示す断面模式図である。本発明におい
ては、従来、メンブレン６の主たる構成材料であった高
結晶性ダイヤモンド膜１の応力がメンブレン作製に不適
当な値である時、すなわち 0.0〜 5.0×109dyn/cm2の引
っ張り応力の範囲にない場合には、その補正のために、
ダイヤモンド膜１の片面もしくは両面に、適当な応力を
有する応力補正膜２を形成してメンブレン６を積層構造
とする。これによって、ダイヤモンド膜１と、該応力補
正膜２とからなる積層膜の引っ張り応力を 0.0〜 5.0×
109dyn/cm2に補正する。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 and 2 are cross-sectional schematic views showing the structure of a mask substrate for X-ray lithography according to the present invention. In the present invention, when the stress of the highly crystalline diamond film 1, which has conventionally been the main constituent material of the membrane 6, is an inappropriate value for fabricating the membrane, that is, a tensile stress of 0.0 to 5.0 × 10 9 dyn / cm 2 . If it is not within the range,
A stress correction film 2 having an appropriate stress is formed on one or both surfaces of the diamond film 1 to form a membrane 6 having a laminated structure. Thereby, the tensile stress of the laminated film composed of the diamond film 1 and the stress correction film 2 is reduced by 0.0 to 5.0 ×
Correct to 10 9 dyn / cm 2 .
【０００８】応力補正のための膜２は、図１、図２に示
すようにダイヤモンド膜のいずれの面に形成してもよい
し、両面に形成してもよい。また材料として SiC、SiN
、SiCN等が挙げられるが、なかでも機械的強度やＳＯ
Ｒ光照射耐性に優れている点から SiC膜が好ましい。The film 2 for stress correction may be formed on any surface of the diamond film as shown in FIGS. 1 and 2, or may be formed on both surfaces. In addition, SiC, SiN
, SiCN, etc., among which mechanical strength and SO
A SiC film is preferred because it has excellent resistance to R light irradiation.
【０００９】以下 SiC膜についてさらに詳述する。SiC
は、ダイヤモンドに比べて応力コントロールが容易であ
り、ダイヤモンドに次ぐ機械的強度、ＳＯＲ光照射耐性
を有するものの、可視光透過性はダイヤモンドに比べて
やや低い。そこでダイヤモンド膜厚ｔdia と SiC膜厚ｔ
SiC とを、膜厚比ｔdia ／ｔSiC≧1.0 の範囲でできる
限り薄くすることで、実用上充分な可視光透過性を得る
ことができる。ｔdia ／ｔSiC は1.0 未満ではダイヤモ
ンドの優れた特性が充分に利用できず、所望する機械的
強度、ＳＯＲ光照射耐性、可視光透過性が得られないと
いう問題があるので、1.0 以上である必要がある。また
ｔdia ／ｔSiC が2000を超えると、ダイヤモンドの応力
補正用の SiC膜に極めて高い応力が必要となり、そのよ
うな高い応力の SiCにはクラックが発生しやすくなると
いった問題がある。Hereinafter, the SiC film will be described in more detail. SiC
Is easier to control the stress than diamond and has mechanical strength and resistance to SOR light irradiation next to diamond, but has slightly lower visible light transmittance than diamond. Therefore, diamond film thickness t dia and SiC film thickness t
By making the thickness of SiC as thin as possible in the range of the film thickness ratio t dia / t SiC ≧ 1.0, practically sufficient visible light transmittance can be obtained. If t dia / t SiC is less than 1.0, the excellent properties of diamond cannot be sufficiently utilized, and there is a problem that desired mechanical strength, SOR light irradiation resistance, and visible light transmittance cannot be obtained. There is a need. If t dia / t SiC exceeds 2000, extremely high stress is required for the SiC film for stress correction of diamond, and there is a problem that cracks are easily generated in SiC having such a high stress.
【００１０】また、ｔdia は0.01μｍ未満では機械的強
度の問題があり、 100μｍを超えるとＸ線吸収の問題が
あるため、0.01〜 100μｍが好ましく、0.01〜10μｍが
より好ましい。ｔSiC は0.01μｍ未満では応力補正効果
が少ない問題があり、 100μｍを超えるとピンホール欠
陥の問題があるため、0.01〜 100μｍが好ましく、0.01
〜10μｍがより好ましい。SiC膜は、スパッター法や熱
ＣＶＤ法等の公知の方法で製膜すればよい。If t dia is less than 0.01 μm, there is a problem of mechanical strength, and if t dia exceeds 100 μm, there is a problem of X-ray absorption. Therefore, t dia is preferably 0.01 to 100 μm, more preferably 0.01 to 10 μm. If t SiC is less than 0.01 μm, there is a problem that the stress correction effect is small, and if it exceeds 100 μm, there is a problem of pinhole defects. Therefore, 0.01 to 100 μm is preferable.
1010 μm is more preferred. The SiC film may be formed by a known method such as a sputtering method or a thermal CVD method.
【００１１】[0011]
【実施例】次に、本発明の実施例について説明する。た
だし本発明はこれによって限定されるものではない。な
お、応力の測定はウェーハ曲率半径（wafer curveture)
法によって行った。 実施例１ 図２に示す構造のＸ線リソグラフィ用マスク基板を作製
する。支持基板３には直径３インチで厚さ 600μｍの両
面研磨シリコンウェーハ（１００）を用いた。支持基板
３上第１層目には、マイクロ波プラズマＣＶＤ法によっ
て気相合成ダイヤモンド膜１を形成する。まず、製膜前
にダイヤモンドの核密度を高くする目的で、支持基板３
表面をダイヤモンド粒子の流動層で処理した。ダイヤモ
ンド粒子には粒径 400μｍのものを用い、窒素ガスを流
速 366cm/secで流して３時間処理を行った。次に、この
前処理済基板３をマイクロ波ＣＶＤチャンバー内にセッ
トし、ロータリーポンプで10-3Torr以下のベースプレッ
シャーまで排気した後、原料ガスである水素希釈メタン
（0.5 容量％）を1000sccm導入した。排気系に通じるバ
ルブの開口度を調節してチャンバー内を30Torrにした
後、電力3000Ｗのマイクロ波を入力して20時間製膜を行
った。製膜中の基板表面は、パイロメータで測定したと
ころ、850 ℃であった。得られた膜厚は 1.5μｍであ
り、膜応力は−5.0 ×109dyn/cm2（圧縮）であった。こ
のダイヤモンド膜はＸ線回折及びラマン分光分析で評価
した結果、高い結晶性を有する多結晶ダイヤモンドであ
ることが確認された。しかしながら上記応力では、バッ
クエッチングした場合にメンブレンにしわが発生した
り、さらにはメンブレンが壊れたりしてしまい、メンブ
レン作製は不可能である。Next, an embodiment of the present invention will be described. However, the present invention is not limited by this. The measurement of stress is based on the wafer curvature radius.
Performed by law. Example 1 A mask substrate for X-ray lithography having a structure shown in FIG. 2 is manufactured. As the support substrate 3, a double-side polished silicon wafer (100) having a diameter of 3 inches and a thickness of 600 μm was used. On the first layer on the support substrate 3, a vapor-phase synthetic diamond film 1 is formed by a microwave plasma CVD method. First, in order to increase the nucleus density of diamond before film formation, the supporting substrate 3
The surface was treated with a fluidized bed of diamond particles. Diamond particles having a diameter of 400 μm were used, and the treatment was performed for 3 hours by flowing nitrogen gas at a flow rate of 366 cm / sec. Next, the pre-processed substrate 3 is set in a microwave CVD chamber, evacuated to a base pressure of 10 -3 Torr or less by a rotary pump, and then hydrogen-diluted methane (0.5% by volume) as a raw material gas is introduced at 1000 sccm. did. After adjusting the opening degree of a valve connected to the exhaust system to 30 Torr inside the chamber, a microwave of 3000 W power was input to perform film formation for 20 hours. The substrate surface during the film formation was 850 ° C. as measured with a pyrometer. The obtained film thickness was 1.5 μm, and the film stress was −5.0 × 10 9 dyn / cm 2 (compression). The diamond film was evaluated by X-ray diffraction and Raman spectroscopy, and as a result, was confirmed to be polycrystalline diamond having high crystallinity. However, with the above stress, wrinkles are generated in the membrane when back etching is performed, and further the membrane is broken, and it is impossible to fabricate the membrane.
【００１２】そこで次に、第２層目に応力補正のための
SiC膜２を形成する。製膜には直径６インチ、厚さ５m
m、純度99.9％以上（Ｃ、Ｏ、Ｎを除く）の SiC焼結体
をターゲットとしたＲＦ（13.56MHz）マグネトロンスパ
ッター法を用いた。ダイヤモンド膜を形成した基板を55
0 ℃に加熱し、ベースプレッシャーが１×10-7Torr以下
になるのを確認した後、アルゴンガスを10sccm導入し
た。排気系に通じるバルブの開口度を調節して８×10-3
Torrとした後、ＲＦ電力1600Ｗを入力して６分間製膜を
行った。得られた SiC膜は厚さ 0.3μｍ、応力が 3.1×
1010dyn/cm2 （引っ張り）であった。ダイヤモンド膜１
と SiC膜２との積層膜からなるメンブレン６は、厚さ
1.8μｍ、応力 1.6×109dyn/cm2（引っ張り）、膜厚比
ｔdia ／ｔSiC は5.0 となった。Then, a second layer for stress correction is provided.
The SiC film 2 is formed. 6 inch diameter, 5m thick for film formation
An RF (13.56 MHz) magnetron sputtering method using a SiC sintered body having a m and a purity of 99.9% or more (excluding C, O, and N) was used. 55 substrates with diamond film
After heating to 0 ° C. and confirming that the base pressure was 1 × 10 −7 Torr or less, 10 sccm of argon gas was introduced. 8 × 10 -3 by adjusting the opening of the valve to the exhaust system
After the pressure was set to Torr, an RF power of 1600 W was input and a film was formed for 6 minutes. The resulting SiC film has a thickness of 0.3 μm and a stress of 3.1 ×
It was 10 10 dyn / cm 2 (tensile). Diamond film 1
Membrane 6 composed of a laminated film of SiC film 2 and SiC film 2 has a thickness of
1.8 μm, stress 1.6 × 10 9 dyn / cm 2 (tensile), and film thickness ratio t dia / t SiC was 5.0.
【００１３】最後に、シリコン基板３の裏面中央35mm角
以外の領域に、裏面保護膜４としてアモルファスBN膜を
形成した後、中央35mm角領域を裏面から95℃の KOH水溶
液でエッチングして図２に示すＸ線リソグラフィ用マス
ク基板を完成させた。このＸ線リソグラフィ用マスクメ
ンブレンの可視光透過率は41％（波長 633nm）であっ
た。さらにメンブレンにＳＯＲ光を100 MJ/cm3照射した
結果、全くＳＯＲ光照射によるダメージが認められず、
極めてＳＯＲ光照射性に優れたメンブレンであることが
確認できた（表１参照）。Finally, an amorphous BN film is formed as a back surface protective film 4 in a region other than the 35 mm square at the center of the back surface of the silicon substrate 3, and then the 35 mm square region at the center is etched from the back surface with a 95 ° C. KOH aqueous solution. Was completed. The visible light transmittance of the X-ray lithography mask membrane was 41% (wavelength: 633 nm). Further, as a result of irradiating the membrane with SOR light at 100 MJ / cm 3 , no damage due to the SOR light irradiation was observed,
It was confirmed that the membrane was extremely excellent in SOR light irradiation property (see Table 1).
【００１４】比較例１ 比較のために、 SiC膜を形成せず、かつダイヤモンド膜
の形成条件を、入力電力1000Ｗ、水素希釈メタン濃度
0.5容量％、製膜中基板温度 850℃とした以外は、実施
例１と同様にＸ線リソグラフィ用マスク基板を作製し、
メンブレンの特性を評価した。結果を実施例１の結果と
共に表１に併記する。Comparative Example 1 For comparison, the conditions for forming a diamond film without forming a SiC film were as follows: an input power of 1000 W and a hydrogen-diluted methane concentration.
A mask substrate for X-ray lithography was prepared in the same manner as in Example 1 except that 0.5% by volume and the substrate temperature during film formation were 850 ° C.
The properties of the membrane were evaluated. The results are shown in Table 1 together with the results of Example 1.
【００１５】比較例２ ダイヤモンド膜の形成条件を入力電力3000Ｗとした以外
は、比較例１と同様にＸ線リソグラフィ用マスク基板を
作製し、メンブレンの特性を評価した。結果を表１に併
記する。Comparative Example 2 A mask substrate for X-ray lithography was prepared and the characteristics of the membrane were evaluated in the same manner as in Comparative Example 1 except that the formation conditions of the diamond film were changed to an input power of 3000 W. The results are also shown in Table 1.
【００１６】比較例３ ダイヤモンド膜の形成条件を、入力電力3000Ｗ、製膜中
基板温度 950℃とした以外は、比較例１と同様にＸ線リ
ソグラフィ用マスク基板を作製し、メンブレンの特性を
評価した。結果を表１に併記する。Comparative Example 3 A mask substrate for X-ray lithography was prepared in the same manner as in Comparative Example 1 except that the conditions for forming the diamond film were set at an input power of 3000 W and a substrate temperature during film formation of 950 ° C., and the characteristics of the membrane were evaluated. did. The results are also shown in Table 1.
【００１７】比較例４ ダイヤモンド膜の形成条件を、入力電力3000Ｗ、水素希
釈メタン濃度 2.0容量％とした以外は、比較例１と同様
にＸ線リソグラフィ用マスク基板を作製し、メンブレン
の特性を評価した。結果を表１に併記する。Comparative Example 4 A mask substrate for X-ray lithography was prepared in the same manner as in Comparative Example 1 except that the conditions for forming the diamond film were set to an input power of 3000 W and a hydrogen-diluted methane concentration of 2.0 vol%, and the characteristics of the membrane were evaluated. did. The results are also shown in Table 1.
【００１８】[0018]
【表１】 [Table 1]
【００１９】表１から、比較例からは上記膜応力と結晶
性とを同時に満足するものは得られなかったことがわか
る。すなわち、比較例１〜３は膜応力が不適格であり、
一方比較例４はメンブレンが作製できる膜応力を有する
ものの、結晶性に劣る。From Table 1, it can be seen that a film satisfying the above film stress and crystallinity at the same time was not obtained from the comparative example. That is, Comparative Examples 1 to 3 are unsuitable for film stress,
On the other hand, Comparative Example 4 has a film stress capable of producing a membrane, but is inferior in crystallinity.
【００２０】[0020]
【発明の効果】本発明によれば、ダイヤモンドと SiCと
の積層膜からなるメンブレンは、ダイヤモンドとほぼ同
程度の機械的強度、ＳＯＲ光照射耐性、可視光透過性に
おける性能を有する。さらに応力補正については、 SiC
によってメンブレンの応力は高精度にコントロールでき
ることになる。According to the present invention, a membrane composed of a laminated film of diamond and SiC has substantially the same mechanical strength, resistance to SOR light irradiation, and visible light transmittance as diamond. For stress compensation, see SiC
Thereby, the stress of the membrane can be controlled with high precision.
【図１】本発明によるＸ線リソグラフィ用マスク基板の
一例の構造を示す断面模式図である。FIG. 1 is a schematic sectional view showing the structure of an example of a mask substrate for X-ray lithography according to the present invention.
【図２】本発明によるＸ線リソグラフィ用マスク基板の
別の一例の構造を示す断面模式図である。FIG. 2 is a schematic sectional view showing the structure of another example of the mask substrate for X-ray lithography according to the present invention.
【図３】従来のＸ線リソグラフィ用マスク基板の構造を
示す断面模式図である。FIG. 3 is a schematic sectional view showing a structure of a conventional mask substrate for X-ray lithography.
１‥‥ ダイヤモンド膜 ２‥‥ SiC 膜（応力補正膜） ３、１３‥ 支持基板 ４、１４‥ 裏面保護膜 ５、１５‥ 吸収体パターン ６‥‥ メンブレン（積層膜） １６‥‥ メンブレン（ダイヤモンド膜） 1 diamond film 2 SiC film (stress correction film) 3, 13 support substrate 4, 14 back protective film 5, 15 absorber pattern 6 membrane (laminated film) 16 membrane (diamond film) )
Claims (4)
両面に応力補正のための膜を形成した積層構造からなる
ことを特徴とするＸ線リソグラフィ用マスクメンブレ
ン。1. A mask membrane for X-ray lithography comprising a laminated structure in which a film for stress correction is formed on one or both surfaces of a vapor-phase synthetic diamond film.
炭化珪素であるＸ線リソグラフィ用マスクメンブレン。2. A mask membrane for X-ray lithography, wherein the film for stress correction according to claim 1 is silicon carbide.
ヤモンド膜と、応力補正のための膜とで構成された積層
膜の応力が 0.0〜 5.0×109dyn/cm2（引っ張り）である
Ｘ線リソグラフィ用マスクメンブレン。3. A laminated film comprising the vapor-phase synthetic diamond film according to claim 1 and a film for correcting stress has a stress of 0.0 to 5.0 × 10 9 dyn / cm 2 (tensile). A mask membrane for X-ray lithography.
材料である気相合成ダイヤモンドの膜厚（ｔdia ）と炭
化珪素の膜厚（ｔSiC ）との比率が、ｔdia／ｔSiC ≧
1.0 であるＸ線リソグラフィ用マスクメンブレン。4. The ratio of the thickness (t dia ) of the vapor-phase synthetic diamond, which is a constituent material of the laminated film according to claim 2 to the thickness (t SiC ) of silicon carbide, is t dia / t. SiC ≧
1.0 x-ray lithography mask membrane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29622296A JP3437389B2 (en) | 1996-11-08 | 1996-11-08 | Mask membrane for electron beam and X-ray lithography |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29622296A JP3437389B2 (en) | 1996-11-08 | 1996-11-08 | Mask membrane for electron beam and X-ray lithography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10144584A true JPH10144584A (en) | 1998-05-29 |
| JP3437389B2 JP3437389B2 (en) | 2003-08-18 |
Family
ID=17830767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29622296A Expired - Fee Related JP3437389B2 (en) | 1996-11-08 | 1996-11-08 | Mask membrane for electron beam and X-ray lithography |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3437389B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000075727A2 (en) * | 1999-06-07 | 2000-12-14 | The Regents Of The University Of California | Coatings on reflective mask substrates |
| KR100392191B1 (en) * | 2001-04-30 | 2003-07-22 | 학교법인 한양학원 | Method for manufacturing mask membrane |
| KR20200033337A (en) * | 2017-08-08 | 2020-03-27 | 에어 워터 가부시키가이샤 | Pelicle and a method of manufacturing the pellicle |
-
1996
- 1996-11-08 JP JP29622296A patent/JP3437389B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000075727A2 (en) * | 1999-06-07 | 2000-12-14 | The Regents Of The University Of California | Coatings on reflective mask substrates |
| WO2000075727A3 (en) * | 1999-06-07 | 2001-05-17 | Univ California | Coatings on reflective mask substrates |
| US6352803B1 (en) | 1999-06-07 | 2002-03-05 | The Regents Of The University Of California | Coatings on reflective mask substrates |
| JP2003501823A (en) * | 1999-06-07 | 2003-01-14 | ザ、リージェンツ、オブ、ザ、ユニバーシティ、オブ、カリフォルニア | Reflective mask substrate coating |
| KR100805360B1 (en) * | 1999-06-07 | 2008-02-20 | 더 리전트 오브 더 유니버시티 오브 캘리포니아 | Coatings on reflective mask substrates |
| KR100392191B1 (en) * | 2001-04-30 | 2003-07-22 | 학교법인 한양학원 | Method for manufacturing mask membrane |
| KR20200033337A (en) * | 2017-08-08 | 2020-03-27 | 에어 워터 가부시키가이샤 | Pelicle and a method of manufacturing the pellicle |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3437389B2 (en) | 2003-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI787234B (en) | Base substrate for diamond film formation, and method for manufacturing diamond substrate using same | |
| KR100358314B1 (en) | A Rigid Carbon Film and A Substrate for Surface Acoustic Wave Device Coated Therewith | |
| WO2006048957A1 (en) | Single-crystal diamond | |
| EP0473332B1 (en) | X-Ray lithography mask and method for producing same | |
| JPH10144584A (en) | Mask membrane for x-ray lithography | |
| JPH04341565A (en) | Manufacture of silicon carbide film | |
| JP3866912B2 (en) | Lithographic mask substrate and method of manufacturing the same | |
| JP3296134B2 (en) | Diamond wafer and method for manufacturing the same | |
| US5335256A (en) | Semiconductor substrate including a single or multi-layer film having different densities in the thickness direction | |
| JP3360269B2 (en) | Diamond film for X-ray lithography and method for producing the same | |
| KR940005278B1 (en) | Membrane for x-ray mask and menufacturing method thereof | |
| US6979520B2 (en) | Stencil mask for ion implantation | |
| JP4768967B2 (en) | Stencil mask for ion implantation and manufacturing method thereof | |
| JP3305458B2 (en) | X-ray lithography mask | |
| TW414957B (en) | X-ray mask and method of fabricating the same | |
| JP3124422B2 (en) | Method of forming highly oriented diamond thin film | |
| US6413681B1 (en) | Diamond film for x-ray lithography and making method | |
| JP3127037B2 (en) | X-ray mask support, X-ray mask structure, and X-ray exposure method | |
| EP4357492A1 (en) | Diamond substrate and manufacturing method for same | |
| JP3576932B2 (en) | Diamond film for lithography and method for producing the same | |
| JPH0636718A (en) | X-ray tubular bulb for diffraction | |
| Rousseaux et al. | X-ray lithography at the Super-ACO storage ring of Orsay (France) | |
| CN117130080A (en) | 83.4nm reflector and manufacturing method thereof | |
| JPH0715880B2 (en) | SiC film for X-ray lithography, its manufacturing method and mask for X-ray lithography | |
| JPS62216325A (en) | Manufacture of x-ray mask |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090606 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120606 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120606 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130606 Year of fee payment: 10 |
|
| LAPS | Cancellation because of no payment of annual fees |