JPH10142068A - Temperature-measuring apparatus and method for measuring temperature using the apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To read measured results from a remote place by driving a card- shaped measuring apparatus having a temperature-measuring part and an operating function element formed on an Si substrate by an external energy supplied in a noncontact manner. SOLUTION: A control part 2, a memory part 3 and an operating part 4 are formed on a surface of an Si substrate 1 with the use of a semiconductor process. A data-receiving flat antenna 5, a data-transmitting flat antenna 6 and a power-receiving flat antenna 7 formed on the substrate 1, and a measuring part 8 of a Pt thin wire resistor formed at a rear face of the substrate 1 are connected to the control part 2. The thus-constituted IC card-type measuring apparatus is attached to an object to be measured, e.g. plasma generation device or the like. While a plasma generation high frequency power is OFF, a pulse drive force is supplied via the antenna 7 and a measuring signal is fed to the control part 2 from the antenna 5. A temperature of the plasma generation device is measured by the measuring part 8, stored in the memory 3, and transmitted to an external receiver from the antenna 6 before the high frequency power is turned ON.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature measuring apparatus suitable for use in a semiconductor device manufacturing process, for example, for measuring the temperature of a substrate or the like held in a reduced-pressure container, and more particularly to a temperature measuring method. is there.

[0002]

2. Description of the Related Art In a semiconductor manufacturing process, precise temperature control is required in order to maintain quality, and a contact thermocouple, a non-contact radiation thermometer, and the like have been widely used.

However, for example, in the case of a thermocouple, it is necessary to route the lead wire, which is inconvenient for measurement in a vacuum. Further, the heat capacity of the lead wire cannot be ignored, and it is difficult to fix the thermocouple on the surface of a wafer or the like to be measured. Furthermore, the measurement with a thermocouple has the disadvantage that it is vulnerable to external disturbance due to high frequency.

[0004] Non-contact radiation thermometers have problems that emissivity varies with temperature, are affected by stray light, and it is difficult to determine an accurate temperature measurement position. It is used only when roughly measuring temperatures above ℃.

As a temperature measurement technique for solving these problems, a fluorescence relaxation property of a fluorescent substance (a property in which the time required for the fluorescence decay of a fluorescent substance which emits light upon receiving light of a specific wavelength varies depending on the surrounding temperature). There has been proposed a method of performing temperature measurement by using a method.

This method has excellent characteristics such as being not affected by noise in an electromagnetic environment, not disturbing the electromagnetic environment, and being electrically safe.

However, in the case of a non-contact type thermometer using this phosphor, it is necessary to apply the phosphor to the measurement surface, and, even though it is non-contact, it is necessary to bring the sensor unit close to several mm. Therefore, this technique is not suitable for temperature reading from a remote point.

[0008]

As described above, there are many problems when the conventional temperature measurement technique is applied to, for example, temperature control in a semiconductor device manufacturing process.
Satisfactory results have not been obtained.

Therefore, the present invention has been proposed in view of such a conventional situation, and provides a temperature measuring device capable of reading a measurement result from a remote point and capable of precise temperature measurement. It is another object of the present invention to provide a temperature measuring method.

[0010]

In order to achieve the above-mentioned object, a temperature measuring apparatus according to the present invention has a temperature measuring section and an arithmetic function element, and is driven by external energy supplied in a non-contact manner. It is characterized by the following.

Further, the temperature measuring device of the present invention may have a storage function element in addition to the temperature measurement section and the arithmetic function element.

These arithmetic function elements and storage function elements calculate heat conduction, temperature rise rate, influence on diffusion, and the like in accordance with the heat capacity of the material layer on the outermost surface. Used for creation, simulation and quality control data.

The temperature measuring section, the arithmetic function element, and the storage function element can be made into a lightweight and compact structure, for example, by being formed on the same semiconductor substrate.

In this case, the operation function element or both the operation function element and the storage function element are made of a wide band gap semiconductor material such as SiC (energy gap Eg is large,
Since the electron mobility is relatively high, it is an electronic device material that can be used at high temperatures. ), It can be used even at a high temperature of, for example, 80 ° C. or more.

Further, in the above-mentioned temperature measuring device, by providing a transmitting section for transmitting the measurement result in the temperature measuring section, the measurement result can be read from outside by non-contact means.

Further, by providing a control unit for controlling the temperature measuring unit and a receiving unit for receiving a signal from the outside and transmitting the signal to the control unit, the timing of temperature measurement can be controlled from the outside by non-contact means. Become.

The above-described temperature measuring device of the present invention is placed, for example, in a decompression container in a semiconductor device manufacturing process, whereby the temperature display section can be separated from the measurement section, and reading of the measurement data can be performed at a remote point. However, a possible temperature measurement system is realized.

A specific example of this is the temperature measuring method of the present invention, which has a temperature measuring unit and an arithmetic function element when a semiconductor device is manufactured on a substrate, and is driven by external energy supplied in a non-contact manner. The temperature measurement device is manufactured on the substrate, and the temperature is measured.

On the other hand, a second temperature measuring method according to the present invention includes a temperature measuring unit and an arithmetic function element for measuring a temperature in a plasma generating apparatus for generating a plasma by applying a high frequency pulse. In addition, a temperature measurement device driven by external energy supplied in a non-contact manner is used to perform temperature measurement within a period in which no high frequency is applied.

By adopting such a configuration, it becomes possible to measure the temperature in plasma, which has been considered difficult.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific embodiments to which the present invention is applied will be described with reference to the drawings.

In this embodiment, each part is formed on a Si substrate.
This is a so-called IC card type temperature measuring device.

In this example, a double-side polished Si substrate was used as the substrate. In addition, a through-hole penetrating the Si substrate is formed, and the through-hole is closed with a metal, thereby ensuring electrical connection between the front and back surfaces.

Subsequently, as shown in FIG. 1, the control unit 2, the memory unit 3, and the arithmetic unit 4 were formed as integrated circuits (LSI) on the surface of the Si substrate 1 by using a semiconductor process.

Further, a planar antenna 5 for data reception, a planar antenna 6 for data transmission, and a planar antenna 7 for power reception are formed on the Si substrate 1, and are electrically connected to the control unit 2 previously formed. Connected. The antennas 5, 6, and 7 are formed by, for example, printed wiring.

Next, a thin wire resistor using Pt was installed on the back surface side of the Si substrate 1 to obtain a measuring unit 8. The measuring unit 8 is electrically connected to the control unit 2 via a through hole closed with the metal.

The temperature measuring device having the above configuration is lightweight and compact, and can read measurement data from a remote point.

The temperature measuring device manufactured in this manner is built on an Si chip having a very small area, and has almost no surface irregularities. It is suitable for measuring.

The above example is merely one example, and the structure, material, arrangement of each part and the like can be appropriately changed without departing from the gist of the present invention.

Next, a description will be given of a measurement example in which a temperature is measured at the time of plasma generation in a plasma generating apparatus (for example, a plasma CVD apparatus) which generates a plasma by applying a high frequency using the above-described temperature measuring apparatus.

FIG. 2 shows a timing chart of the temperature measurement in this measuring method.

First, the Si wafer to which the temperature measuring device having the above-mentioned structure was attached was placed in a reduced-pressure vessel of a plasma generating apparatus which was supplied with high-frequency power to generate plasma.

At this time, in the plasma generator,
Plasma is generated by pulsed high-frequency power (A in FIG. 2).

On the other hand, the driving power of the temperature measuring apparatus is set to a value of the microwave (μm) while the high frequency power for plasma generation is off.
And supplied as pulse power through the power receiving flat antenna 7 (B in FIG. 2).

The driving pulse power is so weak that it does not disturb the generated plasma. Further, it is needless to say that the microwave for power supply does not adversely affect the integrated circuits such as the control unit 2, the memory unit 3, and the arithmetic unit 4 which constitute the temperature measuring device.

The measurement start signal for instructing the temperature measurement start timing is such that the high frequency power for plasma generation is turned off,
Immediately after the pulse power, which was the driving power, was supplied, the data was supplied from the data receiving flat antenna 5 to the control unit 2.

After receiving the data, the temperature measurement was started in the measuring section 8, and the measured data was stored in the memory section 3.

The stored data is collectively transmitted from the data transmitting flat antenna 6 to the external receiver before the high frequency power is turned on next time.

The timing of receiving the measurement start signal and transmitting data in the temperature measuring device is as shown in FIG. 2C.

By the above method, the wafer surface temperature in the plasma generator can be measured, which has been difficult so far, and the non-contact and accurate temperature measurement is realized.

[0041]

As is clear from the above description, according to the temperature measuring device of the present invention, the temperature measurement result can be read from a remote point, and the temperature can be measured precisely.

Further, in the temperature measuring device of the present invention,
For example, the temperature display unit and the power supply can be separated from the measurement unit, and the weight and size of the device can be reduced.

On the other hand, according to the temperature measuring method of the present invention, it is possible to measure the temperature in the plasma generator, which has been difficult so far, and a great effect is expected especially when applied to the temperature measurement in the decompression vessel. You.

[Brief description of the drawings]

FIG. 1 is a schematic view showing one configuration example of a temperature measuring device manufactured on a Si substrate.

FIG. 2 is a timing chart when performing temperature measurement in a plasma generator.

[Explanation of symbols]

1 Si substrate, 2 control unit, 3 memory unit, 4
Arithmetic unit, 8 measuring unit

Claims (8)

[Claims] 1. A temperature measuring device having a temperature measuring unit and an arithmetic function element, and driven by external energy supplied in a non-contact manner. 2. The temperature measuring device according to claim 1, further comprising a storage function element. 3. The temperature measuring device according to claim 1, wherein the temperature measuring section and the arithmetic function element are formed on the same semiconductor substrate. 4. The temperature measuring device according to claim 1, wherein said arithmetic function element is formed of a material having a wider bandgap than silicon. 5. The temperature measuring device according to claim 1, further comprising a transmitting unit for transmitting a measurement result in the temperature measuring unit, wherein the measurement result can be read from outside by a non-contact means. 6. A control unit for controlling the temperature measuring unit and a receiving unit for receiving a signal from the outside and transmitting the signal to the control unit, wherein the timing of the temperature measurement can be controlled from outside by a non-contact means. The temperature measuring device according to claim 1, wherein: 7. When manufacturing a semiconductor device on a substrate,
A temperature measuring method, comprising: producing a temperature measuring device having a temperature measuring section and an arithmetic function element and driven by external energy supplied in a non-contact manner on the substrate, and measuring the temperature. 8. When measuring a temperature in a plasma generating apparatus for generating plasma by applying a high frequency in a pulse form, the apparatus has a temperature measuring unit and an arithmetic function element, and is driven by external energy supplied in a non-contact manner. A temperature measurement method comprising: performing temperature measurement within a time period in which no high frequency is applied, using a temperature measurement device that is used.