JPH10139588A - Vapor phase growing method of compound semiconductor, vapor phase growing device and production of compound semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable to an irradiating method of hydrogen to remove impurities on the surface of a semiconductor to an MOCVD method. SOLUTION: A hydrogenated gas of nonmetal element (hydrogenated element of V or VI group) which constitutes a compound semiconductor is supplied as an atmosphere gas. The gas is activated to produce atomic or ionic hydrogen to irradiate the surface of a wafer so as to purify the surface. In this process, the total pressure is preferably controlled to between >=3×10-<6> atm and <=1/300atm. After the treatment with active hydrogen in the hydrogenated nonmetal (V or VI group) atmosphere, a normal MOCVD growing carried out under >=1/100atom (7.6Torr).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for vapor-phase growth of a compound semiconductor, a vapor-phase growth apparatus, and a method for producing a compound semiconductor element used in the production of semiconductor devices such as LEDs, semiconductor lasers, HEMTs, HBTs and MMICs. About.

[0002]

2. Description of the Related Art MOCVD (metal organic chemical vapor deposition) is widely used today as a technique for producing various compound semiconductors having good crystallinity with good mass productivity.

When an AlGaAs-based semiconductor laser is manufactured using this technique, for example, the following steps are generally performed.

[0004] 1. First growth: MOCV on GaAs substrate
GaAs and AlGaAs
Grow a laminated structure.

[0005] 2. Pattern formation: The substrate is taken out of the MOCVD reaction chamber, and AlGa is formed by photolithography.
A part of the As film is etched to form a stripe groove or a stripe ridge to be a waveguide.

3. Second growth: The substrate is placed in a MOCVD reaction chamber, heated to a high temperature, and AlGaAs and GaAs are grown again on the stripe groove or stripe ridge to complete the stripe structure.

Further, a third growth is performed if necessary.

In performing such growth, the surface condition of the underlayer is particularly important. In the first growth, growth is performed on the GaAs substrate surface, but the impurity element adsorbed on the GaAs surface is desorbed in a high-temperature atmosphere, so that a practically satisfactory film can be grown. On the other hand, after the second growth (1
In the non-repeated growth, referred to as regrowth), it is generally necessary to grow a semiconductor crystal on a mixed surface of AlGaAs and GaAs because a stripe structure is formed. In this case, AlGaAs, in particular, has a strong bonding force with an impurity element such as oxygen, and cannot be completely removed simply by increasing the temperature, and therefore, the crystal quality of the regrown layer is not sufficient.
As a result, defects may occur, and the life of the element is not sufficient. In addition, it is necessary to adopt an element structure that avoids the influence of the bad state of the regrowth interface, which has caused the process to be complicated and the performance to be reduced.

As a method of removing such surface impurities, a method of irradiating active hydrogen is disclosed in, for example, Japanese Patent Application Laid-Open No. 1-30.
No. 1584. In this method, active hydrogen is supplied under a high vacuum at a pressure of 10 ⁻³ Torr or less in an As atmosphere to remove impurities on the surface.

[0010]

However, since this method requires a high vacuum, MBE (molecular beam epitaxy) is required.
Although it could be applied to the method, it could not be applied to the MOCVD method. There are two reasons for performing the active hydrogen treatment in a high vacuum. One is that active hydrogen collides with each other and loses energy, so it was necessary to lower the pressure so that the collision frequency was reduced. Another reason is that during active hydrogen treatment, MB
In the E method, active hydrogen is irradiated in an As atmosphere (As ₄ or As ₂ ), but As in the atmosphere reacts with active hydrogen to become a hydride of As and consumes active hydrogen. It was necessary to reduce the pressure as much as possible.

[0011]

In order to solve the above problems, according to the present invention, a hydride gas of a nonmetallic element (a group V or group VI hydride) constituting a compound semiconductor is supplied as an atmosphere gas to activate the compound semiconductor. The surface of the wafer is cleaned by irradiating the wafer surface with atomized or ionized hydrogen. At this time, the total pressure is 3 × 10 ⁻⁶ atmosphere or more and 1/30.
0 atm or less is desirable. At this time, no metal element source gas (Group III or Group II source) is introduced.

After the active hydrogen treatment in the non-metallic (group V or group VI) hydride atmosphere, normal MOCVD is performed at a pressure of 1/100 atm (7.6 Torr) or more.
Do the growth.

Here, the hydride of the constituent nonmetallic element is
It refers to a material in which hydrogen is directly bonded to a nonmetallic element, and does not include a material in which hydrogen is bonded to C or the like bonded to a nonmetallic element in the hydride of this patent.

The hydride gas containing the nonmetallic element constituting the compound is arsine, tertiary butyl arsine, phosphine, tertiary butyl phosphine, ammonia, selenium hydride, or hydrogen sulfide.

In the active hydrogen treatment, the wafer is heated to 300 ° C.
It is desirable to carry out the reaction at a temperature of not higher than 00 ° C, preferably not lower than 500 ° C.

In the growth apparatus, the source gas flow in the MOCVD reaction chamber is disturbed in order to prevent the active hydrogen generation source from being destroyed by the pressure required for MOCVD growth, or to prevent the source gas flow in the MOCVD reaction chamber due to the presence of the active hydrogen generation source. In order to prevent this, the active hydrogen treatment is performed in a vacuum chamber separate from the MOCVD reaction chamber, and the wafer is transported in a high vacuum or in a hydrogen atmosphere to perform MOCVD.
It is advisable to introduce into the reaction chamber and perform MOCVD growth.

Alternatively, in order to prevent impurities from re-adhering to the wafer surface during the transfer after the active hydrogen treatment, and to simplify the process and growth apparatus, the active hydrogen generator is provided with an MOC.
After attaching it to the VD reaction chamber and performing active hydrogen treatment, M
An apparatus for performing OCVD growth at 1/100 atm or higher may be used.

Prior to regrowth, the semiconductor element is supplied with a hydride gas (a group V or group VI hydride) of a non-metal element constituting the compound semiconductor as an atmosphere gas, and is activated to become an atomic or ionic gas. Irradiated hydrogen on the wafer surface to clean the growth surface,
Regrowth is performed by the CVD growth method. According to this manufacturing method, the crystal quality of the regrown layer is sufficient, and a device having a long lifetime can be provided without occurrence of defects.

[0019]

DETAILED DESCRIPTION OF THE INVENTION Active hydrogen (hydrogen atom or hydrogen ion) effectively removes impurities such as oxygen bonded to Al which form a non-luminescent center when incorporated into a crystal due to its strong reactivity. Due to its strong reactivity, active hydrogen easily reacts with, for example, an As molecular beam (As ₂ or As ₄ ) generated from a heated As material and is consumed. For this reason, the active hydrogen treatment under As molecular beam irradiation is extremely inefficient. On the other hand, in order to perform the active hydrogen treatment effectively, it is necessary to raise the temperature of the substrate to a certain degree.
If the s material is not supplied, As is desorbed from the surface of the compound semiconductor film, and the original composition is destroyed.

In the present invention, AsH ₃ (arsine) or the like
Active hydrogen treatment is performed in a hydride atmosphere containing a non-metal element constituting a compound semiconductor constituent element. Since the hydride gas is originally bonded to hydrogen, it is hardly bonded to active hydrogen, and the active hydrogen treatment can be effectively performed even if the pressure of the hydride gas is higher than that of non-hydride. When the pressure of the hydride gas is high, the desorption of the constituent elements from the substrate surface can be suppressed more effectively.

At this time, a metal source gas as the other constituent element is not introduced. This is because if a metal source is supplied in a non-metal source atmosphere, crystal growth occurs, and the interface impurities are not removed and are buried in the growth layer. In addition, for example, when an organic metal gas is introduced as a source gas, a large amount of hydrogen is required when the organic metal is dissociated into the metal, so active hydrogen required for removing impurities on the surface is consumed. It is.

As described above, after the active hydrogen treatment is performed in an atmosphere having a lower degree of vacuum than the conventional one, the pressure is increased to a region where the normal MOCVD is performed (at least 1/100 atm). Enabled active hydrogen treatment.

In the present invention, during active hydrogen treatment and MOCVD
Since the pressure during growth is different, two methods are presented. One method is to separate the active hydrogen processing chamber from the MOCVD growth chamber. This makes it possible to easily combine two processes having different pressures. The other is MOC
In this method, an active hydrogen generator is provided in association with the VD reaction chamber. In this case, by performing the active hydrogen treatment at a low pressure and then gradually increasing the pressure to perform MOCVD growth, both processes can be performed in the same reaction chamber.

Hereinafter, specific examples of the present invention will be described in more detail with reference to the drawings.

Embodiment 1 This embodiment is an example of application to an AlGaAs laser produced by the MOCVD method as shown in FIG. 1, and FIG. 2 shows an example of a growth apparatus. FIG. 2 shows a growth apparatus in which the active hydrogen processing chamber 16 and the MOCVD growth chamber 18 are separated. First, the wafer 10 is transferred to the MOCVD reaction chamber 18 through the front chamber 12 and the transfer chamber 14, and the first growth is performed. Is performed.

That is, as shown in FIG. 1A, an n-type GaAs buffer layer 52 is formed on an n-type GaAs substrate 51.
n-type AlGaAs cladding layer 53, undoped AlGa
As active layer 54, p-type AlGaAs first cladding layer 5
5, p-type GaAs etching stop layer 56, n-type Al
A GaAs current block layer 57 and an n-type GaAs current block layer 58 are formed. Group III raw materials are TMG (trimethylgallium), TMA (trimethylaluminum), V
The group material used was AsH ₃ (arsine), the n-type dopant material was SiH ₄ , and the p-type dopant material was DEZ (diethyl zinc). Temperature is 750 ° C, pressure is 76 Torr
(1/10 atm).

As shown in FIG. 1 (b), the n-type GaAs
The current block layer 58 and the n-type AlGaAs current block layer 57 are etched until they reach the p-type GaAs etching stop layer 56 to form a stripe groove 65.

Next, the wafer 10 is transferred to the front chamber 12 and the transfer chamber 14.
And into the active hydrogen treatment chamber 16. Here, before raising the substrate temperature, A
In order to prevent s from desorbing, the needle valve 23 was opened and AsH ₃ was introduced until the degree of vacuum reached 1 × 10 ^-2 Torr. The substrate temperature is set to 550 ° C., active hydrogen is introduced, the degree of vacuum is set to 1 × 10 ⁻¹ Torr, and the temperature is maintained for 10 minutes. The hydrogen gas is activated by the active hydrogen generator 17 and introduced into the reaction chamber 16. Active hydrogen is generated by ECR (Electron Cyclotron Resonance). As a result, the n-type AlGaAs current blocking layer 57, which was normally difficult to remove,
Oxygen, carbon and other impurities attached to the surface of the metal are effectively removed.

Thereafter, the wafer 10 is introduced into the MOCVD reaction chamber 18 through the transfer chamber 14, and the pressure is set to 76 Torr (1
/ 10 atm), a substrate temperature of 750 ° C., and a p-type AlGaAs second cladding layer 59 as shown in FIG.
The s-contact layer 60 is grown. Further, electrode formation, chip division, and mounting on a stem are performed to obtain a semiconductor laser device.

The active hydrogen generator 17 includes E
In addition to using the CR method, hydrogen plasma excited by a hot filament or the like may be used.

During the active hydrogen treatment, the hydride AsH, which is a hydride of AsH, is used to prevent surface roughness due to desorption of nonmetallic constituent atoms (As in this case) as the substrate temperature rises.
_Three gases were introduced. AsH in the case of AlGaAs growth
_{In addition to the three} gases, TBAs (tertiary butyl arsine) is also suitable. The introduction pressure of the As hydride may be lower than the pressure of the active hydrogen, or may be higher. A
The s-hydride may be supplied as a mixed gas with hydrogen.

The transfer in the transfer chamber 14 is performed in a high vacuum (1
(10 × 10 ⁻⁸ Torr), but may be performed in a low-pressure hydrogen atmosphere (for example, 10 Torr), in which case the residual gas in the transfer chamber is removed by the flow of hydrogen.

In order to confirm the effect of the first embodiment, SIMS
Was analyzed for oxygen. Stripe section 65 (FIG. 1B)
Since the ratio of the p-type AlGaAs second cladding layer 59 to the n-type GaAs current blocking layer 58 is small, the regrowth interface is measured. FIG.
FIG. 11 shows SIMS measurement results of this example and the same element as this example except that active hydrogen treatment was not performed for comparison. Thus, it was found that the oxygen concentration at the regrowth interface was reduced.

FIG. 4 shows the result of examining how the oxygen removing effect changes depending on the pressure during the active hydrogen treatment. In the previous SIMS, the pressure dependency of the ratio of the amount of oxygen at the interface to the presence or absence of active hydrogen was plotted. As can be seen from the figure, the effect of the active hydrogen treatment is more than doubled when the pressure is 1/300 atm or less, and the effect of the active hydrogen treatment is clearly shown at 1/1000 atm or less. On the other hand, the pressure effect is doubled or less decreased in the following 3 × 10 ^-6 atm, pressure at the time of irradiating the active hydrogen, 3 × 10 ^-6 atmospheres or higher 1/3
A pressure of 00 atm or less is appropriate.

Example 2 In Example 1, the pressure of the active hydrogen treatment and the MOCVD
Since the growth pressure is significantly different, the active hydrogen treatment chamber 1
The MOCVD reaction chamber 6 and the MOCVD reaction chamber 18 were separately provided, and the wafer was transferred in a vacuum. In the second embodiment, as shown in FIG.
An active hydrogen generator 17 is attached to the CVD reaction chamber 18 so as to perform both steps. This eliminates the possibility of impurities adhering again during transportation and simplifies the mechanism and steps of the apparatus. ing.

Up to the point where the first growth and photolithography are performed on the wafer, that is, the portions shown in FIGS. 1A and 1B are the same as those in the first embodiment. Next, the wafer 10 is introduced into the MOCVD reaction chamber 18 through the front chamber 12 and the transfer chamber 14. An active hydrogen inlet 21 is provided in the reaction chamber 18 adjacent to the source gas inlet 20. At the time of wafer introduction, the valve 19 in front of the source gas introduction port 20 is closed, and the degree of vacuum in the reaction chamber is sufficiently high. Prior to the introduction of active hydrogen, the source gas supply valve 19 is opened, and AsH ₃ is supplied from the source gas inlet 20 at a pressure of 3 × 10
^-2 Introduce until Torr. By opening the hydrogen gas introduction needle valve 15, the hydrogen gas is activated by the active hydrogen generator 17 in which the filament is heated, and is introduced into the reaction chamber through the introduction port 21. The temperature of the wafer when performing the active hydrogen treatment is 600 ° C., and the pressure is 1 × 1.
0 ^-1 Torr, time is 20 minutes. At this time, the substrate is rotated in order to perform a uniform active hydrogen treatment within the substrate surface. The rotation speed is 10 rpm.

After the completion of the active hydrogen treatment, the temperature of the filament is lowered. The hydrogen needle valve 15 is further opened to flow a large amount of hydrogen so that the source gas does not enter the active hydrogen generator 17. Thereby, the pressure in the reaction chamber 18 also gradually increases.

Thereafter, the mixed gas of AsH ₃ and hydrogen is supplied from the raw material gas inlet 20 by gradually increasing the setting of the mass flow controller 22, and the pressure in the reaction chamber is gradually increased to 76 Torr. At the same time, the substrate temperature is gradually increased to 750 ° C. Here, the pressure increasing rate was 0.1 Torr per second. 5 at substrate temperature of 750 ° C
After that, the p-type AlGaAs second cladding layer 59 and the p-type GaAs contact layer 60 shown in FIG. 1C are grown on the wafer.

Although the hydrogen needle valve 15 is provided farther from the active hydrogen generator 17 when viewed from the reaction chamber 18, the valve having a large opening can be provided with the active hydrogen generator 17.
And a reaction chamber. Also, while AsH ₃ gas, which is As hydride, was introduced from the raw material supply line during the active hydrogen treatment, the introduction pressure of the As hydride may be lower than that of the active hydrogen, and conversely, it may be higher. Is also good.
As hydride may be supplied as a mixed gas with hydrogen.

In FIG. 5, the MOCVD reaction chamber 18 may be vertical or horizontal. In any case, it is desirable that the active hydrogen generator 17 be installed upstream of the source gas so as not to be affected by the contamination due to the deposition of the reaction gas during MOCVD growth.

In order to uniformly irradiate the substrate with active hydrogen, it is effective not only to rotate the substrate but also to provide a plurality of active hydrogen inlets 21.

Instead of the hydrogen needle valve 15, a combination of a mass flow controller and a valve may be used.

In this embodiment, the SIMS shown in FIG.
The analysis of oxygen by oxygen and the effect of removing oxygen by pressure during active hydrogen treatment shown in FIG. 4 were the same.

Embodiment 3 In Embodiment 3, the surface treatment method of the present invention is applied to an AlGaInP laser manufactured by the MOCVD method.

As shown in FIG. 6A, an n-type GaAs buffer layer 72 and an n-type AlG
aInP cladding layer 73, undoped GaInP active layer 74, p-type AlGaInP first cladding layer 75, p-type G
aInP etching stop layer 76, p-type AlGaIn
A P-type second cladding layer 77, a p-type GaInP intermediate band gap layer 78, and a p-type GaAs contact layer 79 are formed. Group III raw materials include TMG, TMA, TMI
(Trimethylindium), as a group V raw material, PH ₃
(Phosphine), AsH ₃ , and S as an n-type dopant
DEZ was used as iH ₄ and p-type dopant. The temperature is 720 ° C. and the pressure is 30 Torr.

Next, as shown in FIG. 6B, an SiO ₂ film 80 is formed on the wafer surface, and this is etched in a stripe shape by photolithography. This SiO ₂
Using the film 80 as a mask, the p-type GaAs contact layer 7
9, p-type GaInP intermediate band gap layer 78, p-type A
The 1GaInP second cladding layer 77 is etched until it reaches the p-type GaInP etching stop layer 76 to form a ridge stripe structure 83.

Here, the wafer is introduced into the active hydrogen processing chamber 16 of the growth apparatus shown in FIG. After introducing PH ₃ into the active hydrogen processing chamber 16 at 2 × 10 ⁻² Torr and setting the temperature of the wafer 10 to 550 ° C., irradiation with active hydrogen is performed for 30 minutes. Active hydrogen was supplied by an ECR plasma method. Due to the introduction of hydrogen, the pressure of the active hydrogen processing chamber 16 becomes 1 × 10 ⁻¹ Torr.
Becomes

Thereafter, the wafer 10 is transferred to the transfer chamber 14 (pressure 1).
× 10 ^-8 Torr or less) and MOCVD reaction chamber 1
Introduce to 8. The reaction chamber 18 is in a H ₂ atmosphere and a pressure of 30 To.
rr and the temperature was set to 720 ° C.
An n-type GaAs current block layer 81 is grown as shown in FIG.

Then, the wafer 10 is transferred to the MOCVD apparatus 18.
The unnecessary n-type GaAs and the SiO ₂ film deposited on the SiO ₂ film 80 are removed. After that, the wafer 10 is again introduced into the MOCVD reaction chamber 18 and the wafer 10 shown in FIG.
As shown in the figure, the p-type GaAs cap layer 82 is
Grow by D method. At this time, the surface treatment with active hydrogen was omitted. In addition, although operation as a laser is possible without the cap layer 82, this layer is provided here in order to reduce the contact resistance by expanding the contact area.

By the active hydrogen treatment performed in this embodiment, the flatness in the vicinity of the ridge stripe portion 83 of the n-type GaAs current block layer 81 is remarkably improved.

Here, PH ₃ was supplied as P hydride gas during the active hydrogen treatment, but TBP (tertiary butyl phosphine) may be supplied.

The active layer 74 is composed of a GaInP layer and an AlG
It may be an aInP layer. Cladding layers 73, 75, 7
Reference numeral 7 may be an AlInP layer other than the AlGaInP layer. The n-type current blocking layer is not a GaAs layer, but a GaI.
It may be an nP layer, an AlGaInP layer, or a laminated structure thereof.

Embodiment 4 Embodiment 4 is an AlGaInP-based laser, but employs the same groove-type stripe structure as AlGaAs of Embodiment 1.

In the conventional AlGaInP laser, this structure is said to be more disadvantageous in reliability than the ridge stripe structure of the third embodiment because the regrowth interface is close to the active layer. In Example 4, re-growth interface cleaning with active hydrogen was able to achieve almost the same reliability as the ridge stripe structure of Example 3.

As shown in FIG. 7A, an n-type GaAs buffer layer 72 and an n-type AlG
aInP cladding layer 73, undoped GaInP active layer 74, p-type AlGaInP first cladding layer 75, p-type G
aInP etching stop layer 76, n-type AlGaIn
A P current block layer 85 is formed. Next, as shown in FIG. 7B, stripe grooves 86 are formed by photolithography.

The wafer in this state is subjected to MOCVD shown in FIG.
It is introduced into the reaction chamber 18. The source gas supply valve 19 is opened, and PH ₃ is supplied from the source gas inlet 21 to 5 × 10 ^-2 To.
rr is introduced, and the temperature of the wafer 10 is set to 550 ° C. Active hydrogen is generated by passing hydrogen gas through an active hydrogen generator 17 in which a filament is heated, and is introduced into an MOCVD reaction chamber 18 through an inlet 21. The pressure during the active hydrogen treatment is 2 × 10 ⁻¹ Torr, and the time is 20 minutes.

After the active hydrogen treatment, the temperature of the filament is lowered. The hydrogen needle valve 15 is further opened to flow a large amount of hydrogen so that the source gas does not enter the active hydrogen generator 17. Thereby, the pressure in the reaction chamber 18 also gradually increases. After this, the mass flow controller 22
Is gradually increased to 30 Torr while the substrate temperature is gradually increased to 720 ° C. Here, the pressure increasing rate was 0.2 Torr per second. After holding at a substrate temperature of 720 ° C. for 5 minutes, as shown in FIG.
The aInP second cladding layer 87, the p-type GaInP intermediate band gap layer 88, and the p-type GaAs contact layer 89 are grown.

The oscillation wavelength of the device manufactured according to the fourth embodiment is 650 nm. P-type Ga for active hydrogen treatment
The quality of the p-type AlGaInP layer 87 regrown on the InP layer 78 is good. Therefore, in the reliability test, the average failure time of 3000 hours could be achieved at 5 mW at 60 ° C. In the structure of this element, even if grown twice, the surface area of the p-type contact layer 89 is sufficiently large and there is no complicated process such as formation of SiO ₂ .

Example 5 Example 5 is an AlGaInP-based LED (light emitting diode), in which a current blocking layer is provided to suppress invalid light emission immediately below the electrodes.

As shown in FIG. 8A, an n-type GaAs buffer layer 102 and an n-type A
lGaInP cladding layer 103, undoped GaInP
Active layer 104, p-type AlGaInP cladding layer 105,
p-type GaInP etching stop layer 106, n-type Al
A GaInP current block layer 107 and an n-type GaInP protection layer 108 are formed. Next, as shown in FIG.
By photolithography, portions other than necessary portions of the n-types 107 and 108 are removed.

Then, the wafer is subjected to MOCVD shown in FIG.
It is introduced into the reaction chamber 18. The subsequent processing of active hydrogen and the preparation for MOCVD growth after the processing of active hydrogen are the same as those in the fourth embodiment.
As shown in (c), a p-type AlGaAs current diffusion layer 109 and a p-type GaAs cap layer 110 are grown on the wafer.

Finally, as shown in FIG.
A p-side electrode 111 is deposited on the aAs cap layer 110, and a circular p-side electrode 111, p is formed on the current blocking layer 107.
Etching is performed so that the mold cap layer 110 remains. An n-side electrode 112 is formed on the back surface of the substrate.

The p-side electrode 11 is formed by the current blocking layer 107.
The reactive current flowing immediately below 1 is suppressed, and the luminous efficiency increases as compared with the case where there is no current blocking layer. Further, the quality of the AlGaAs current diffusion layer 109 thereon was improved by the active hydrogen treatment of the present invention, and the transparency and the current diffusion were improved. In addition, the regrowth interface was improved, and the operating voltage (at an operating current of 20 mA) was reduced by about 0.15 V.

The light emission wavelength of the device obtained in Example 5 is yellow (590 nm), but can be 550 nm (green) to 650 nm (red) depending on the Al component ratio of the active layer 104.

In the vapor phase growth method of the present invention, a semiconductor device other than those shown in Examples 1 to 5, for example, an AlGaAs L
ED, AlGaInP-based LED, InGaAsP-based light-emitting device, InGaAs-based light-emitting device, InGaAlN-based light-emitting device, Zn (Mg) CdSe-based light-emitting device, AlGaAs
The present invention is also applicable to electronic circuit elements and integrated circuits, InGaAs electronic circuit elements and integrated circuits, and other semiconductor elements. In the case of, for example, an InGaAlN-based light emitting device, active hydrogen processing is performed on the regrowth interface in an NH ₃ (ammonia) atmosphere. Alternatively, in the case of a ZnMgCdSe-based light-emitting element, the active hydrogen treatment is performed in an H ₂ Se (hydrogen selenium) atmosphere, and in the case of a ZnS-based light-emitting element, the active hydrogen treatment is performed in an H ₂ Se (hydrogen sulfide) atmosphere.

[0066]

According to the present invention, the surface is cleaned with active hydrogen in a nonmetal hydride atmosphere, and then the pressure is increased to grow the crystal by MOCVD. This allows MO
The condition of the initial growth surface of the CVD method is improved, and a higher quality M
OCVD growth has become possible. Therefore, characteristics of various semiconductor elements, for example, an AlGaAs light emitting element and an AlGaInP light emitting element are improved.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating an example of a manufacturing process of an AlGaAs laser according to the present invention.

FIG. 2 is a diagram showing a configuration example of a vapor phase growth apparatus according to the present invention.

FIG. 3 is a diagram showing an example of oxygen concentration measurement.

FIG. 4 is a diagram showing the relationship between pressure and effect of active hydrogen processing.

FIG. 5 is a diagram showing another configuration example of the vapor phase growth apparatus according to the present invention.

FIG. 6 is a diagram illustrating an example of a manufacturing process of an AlGaInP-based laser according to the present invention.

FIG. 7 is a diagram illustrating another example of the manufacturing process of the AlGaInP-based laser according to the present invention.

FIG. 8 is a diagram illustrating an example of a manufacturing process of an AlGaInP-based LED according to the present invention.

DESCRIPTION OF SYMBOLS 10 Wafer 12 Front chamber 14 Transfer chamber 15 Hydrogen needle bubble 16 Active hydrogen processing chamber 17 Active hydrogen generator 18 MOCVD reaction chamber 19 Raw material bubble 20 Raw material inlet 21 Active hydrogen inlet 65 Stripe groove 83 Ridge stripe Structure 86 Stripe groove 107 Current blocking layer 108 Protective layer

Claims (7)

[Claims] 1. A compound semiconductor substrate or a substrate on which a compound semiconductor film is formed is irradiated with active hydrogen under the introduction of a hydride gas containing a nonmetallic element constituting a compound.
MOCV on the substrate at a pressure of 1/100 atmosphere or more
A vapor phase growth method for a compound semiconductor, wherein the growth is performed by the D method. 2. The pressure for irradiating the active hydrogen is 3 ×.
2. The method according to claim 1, wherein the pressure is from 10 ^-6 atm to 1/300 atm. 3. The hydride gas containing a nonmetallic element constituting the compound is arsine, tert-butylarsine, phosphine, tert-butylphosphine, ammonia, selenium hydride, or hydrogen sulfide. A method for growing a compound semiconductor according to claim 1. 4. The processing of active hydrogen includes the step of:
The method according to claim 1, wherein the method is performed at a temperature of not less than 800C and not more than 800C. 5. An active hydrogen treatment chamber for irradiating a compound semiconductor substrate or a substrate on which a compound semiconductor film is formed with active hydrogen under the introduction of a hydride gas containing a non-metallic element constituting a compound, The irradiated substrate is conveyed, and a pressure of 1/100 atm or more is
An apparatus for vapor-phase growth of a compound semiconductor, comprising: an MOCVD reaction chamber for performing growth by an OCVD method. 6. An active hydrogen generator for generating active hydrogen, and an MOCVD reaction chamber for growing by an MOCVD method, wherein the active hydrogen generator includes the MOCV.
A hydride gas containing a nonmetallic element constituting the compound was introduced to the compound semiconductor substrate or the substrate on which the compound semiconductor film was formed in the MOCVD reaction chamber. Later, MOCV
MOCVD by increasing the pressure in the D reaction chamber to 1/100 atm or more
Compound semiconductor vapor phase growth equipment for growth. 7. A method for manufacturing a compound semiconductor device including a semiconductor formation step by at least two or more MOCVD growth methods, wherein hydrogen of a nonmetallic element constituting the compound semiconductor is used as an atmosphere gas before the second and subsequent regrowth. A semiconductor gas is supplied to the semiconductor substrate surface by activating the atomized or ionized hydrogen to irradiate the surface of the semiconductor substrate, thereby cleaning the growth surface. A method for manufacturing a compound semiconductor device, comprising performing regrowth by MOCVD under pressure.