JPH10135217A - Method of forming bumps - Google Patents

Method of forming bumps

Info

Publication number
JPH10135217A
JPH10135217A JP8287151A JP28715196A JPH10135217A JP H10135217 A JPH10135217 A JP H10135217A JP 8287151 A JP8287151 A JP 8287151A JP 28715196 A JP28715196 A JP 28715196A JP H10135217 A JPH10135217 A JP H10135217A
Authority
JP
Japan
Prior art keywords
paste
bump
shape
bumps
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP8287151A
Other languages
Japanese (ja)
Inventor
Yoshiki Suzuki
芳規 鈴木
Michio Muraida
道夫 村井田
Yoshishige Nakada
圭成 中田
Kazutaka Suzuki
一高 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP8287151A priority Critical patent/JPH10135217A/en
Publication of JPH10135217A publication Critical patent/JPH10135217A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods

Landscapes

  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To stably form bumps of a specified shape, by depositing a conductor paste on bump forming regions and radiating a laser beam on the paste. SOLUTION: For forming bumps a conductor paste P is deposited in a specified shape on terminal electrodes 2; the shape depending on a paste depositing means is pref. circular columnar, drum-like, truncated circular conical, or semi- spherical in approximately fixed size. A laser beam LB is radiated through an optical system on the paste P deposited on the electrodes 2 to apply a thermal energy on the entire deposited paste P enough to evaporate solvents in the paste and thermally decompose a binder, thus baking the paste P and hence forming bumps 3 of a shape corresponding to the deposited paste P on the electrodes 2. Thus, bumps are formed in a simple procedure and stably in the shape corresponding to the paste deposition shape.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、電子回路素子や回
路基板に接続用のバンプ(突起導体)を形成するバンプ
形成方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bump forming method for forming a connecting bump (projecting conductor) on an electronic circuit element or a circuit board.

【0002】[0002]

【従来の技術】IC,LSI等の電子回路素子と回路基
板との接続方法としてフリップチップボンディング法が
知られている。この方法は、素子底面の端子電極に形成
されたバンプと回路基板の導体とを半田等を用いて電気
的に接続、または、素子底面の端子電極と回路基板の導
体に形成されたバンプとを半田等を用いて電気的に接続
する方法である。上記のバンプは周知のワイヤバンプで
あり、ワイヤボンダーによって電子回路素子の端子電極
または回路基板の導体に予め形成される。
2. Description of the Related Art A flip chip bonding method is known as a method for connecting an electronic circuit element such as an IC or an LSI to a circuit board. In this method, the bumps formed on the terminal electrodes on the bottom surface of the element and the conductors on the circuit board are electrically connected using solder or the like, or the terminal electrodes on the bottom surface of the element and the bumps formed on the conductors on the circuit board are connected. This is a method of electrically connecting using solder or the like. The above-mentioned bump is a known wire bump, and is formed in advance on a terminal electrode of an electronic circuit element or a conductor of a circuit board by a wire bonder.

【0003】ここで、図2を参照して従来のバンプ形成
方法の一例を紹介する。ちなみに、図中の101はキャ
ピラリ、102はワイヤ、103は電子回路素子、10
4は素子底面に設けられた端子電極である。
Here, an example of a conventional bump forming method will be introduced with reference to FIG. Incidentally, in the figure, 101 is a capillary, 102 is a wire, 103 is an electronic circuit element, 10
Reference numeral 4 denotes a terminal electrode provided on the bottom surface of the element.

【0004】バンプ形成に際しては、まず、図2(a)
に示すように、キャピラリ101の孔101aに挿通さ
れたワイヤ102の先端に、ガス炎や静電放電等により
熱を加えてボール102aを形成する。
In forming a bump, first, FIG.
As shown in (1), a ball 102a is formed by applying heat to the tip of a wire 102 inserted into a hole 101a of a capillary 101 by gas flame, electrostatic discharge, or the like.

【0005】次に、同図(b)に示すように、キャピラ
リ101を下方向に移動させてボール102aを端子電
極104に押し付けて、熱圧着や超音波等によって接合
する。この押し付けによってボール102aは押し潰さ
れて変形し扁平となる。
Next, as shown in FIG. 1B, the capillary 101 is moved downward to press the ball 102a against the terminal electrode 104, and is bonded by thermocompression bonding or ultrasonic waves. By this pressing, the ball 102a is crushed and deformed to be flat.

【0006】次に、同図(c)に示すように、キャピラ
リ101のみを上方向に移動させ、上昇位置からさらに
横方向に移動させる。このときのキャピラリ101の横
方向の移動量は、ワイヤ挿通孔101aの中心が変形し
たボール102aより外側に外れないようにする。ま
た、この横方向の移動により、キャピラリ101の孔1
01aからワイヤ102が移動量に応じた長さだけ引き
出される。
Next, as shown in FIG. 1C, only the capillary 101 is moved upward, and further moved laterally from the raised position. At this time, the amount of movement of the capillary 101 in the lateral direction is set so that the center of the wire insertion hole 101a does not move outside the deformed ball 102a. Further, the horizontal movement causes the hole 1 of the capillary 101 to move.
01a is pulled out by a length corresponding to the amount of movement.

【0007】次に、同図(d)に示すように、キャピラ
リ101を横方向移動位置から下方向に移動させ、引き
出されたワイヤ102をキャピラリ101の先端でボー
ル102内に押し込んで該ボール102に吸収させる。
これにより、ワイヤ102とボール102aの境界部分
が脆弱化され、脆弱化による小径化や切れ目等により同
部分が切断し易くなる。
Next, as shown in FIG. 1D, the capillary 101 is moved downward from the lateral movement position, and the pulled-out wire 102 is pushed into the ball 102 by the tip of the capillary 101, thereby causing the ball 102 to move. Absorb.
As a result, the boundary between the wire 102 and the ball 102a is weakened, and the portion is easily cut due to a small diameter or a cut due to the weakening.

【0008】次に、同図(e)に示すように、キャピラ
リ101をワイヤ102と一緒に上方向に移動させ、上
記の脆弱化部分でワイヤ102とボール102aとを引
きちぎるようにして切り離す。以上でバンプBが端子電
極104上に形成される。
Next, as shown in FIG. 1E, the capillary 101 is moved upward together with the wire 102, and the wire 102 and the ball 102a are cut off at the weakened portion. As described above, the bump B is formed on the terminal electrode 104.

【0009】[0009]

【発明が解決しようとする課題】図2に例示した方法に
限らず、従来のバンプ形成方法では、ワイヤに少なから
ず引っ張り力を加えてボールとの切り離しを行うため、
ワイヤ切断位置にバラツキを生じ易く、切断位置がボー
ルに近すぎると該ボールに凹みが形成されたり全体形状
が歪む等の不具合を発生する。
In the conventional bump forming method, not only the method illustrated in FIG. 2 but also a considerable amount of pulling force is applied to the wire to separate the wire from the ball.
Variations are likely to occur in the wire cutting position, and if the cutting position is too close to the ball, problems such as formation of a dent in the ball and distortion of the overall shape will occur.

【0010】本発明は上記事情に鑑みてなされたもの
で、その目的とするところは、所定形状のバンプを安定
して形成できるバンプ形成方法を提供することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a bump forming method capable of stably forming a bump having a predetermined shape.

【0011】[0011]

【課題を解決するための手段】上記目的を達成するた
め、本発明に係るバンプ形成方法は、導体ペーストをバ
ンプ形成相手に付着する工程と、付着ペーストにレーザ
光を照射する工程とを具備した、ことをその主たる特徴
としている。
In order to achieve the above object, a bump forming method according to the present invention includes a step of attaching a conductive paste to a bump forming partner and a step of irradiating the attached paste with a laser beam. That is its main feature.

【0012】このバンプ形成方法によれば、バンプ形成
相手に付着された導体ペーストにレーザ光を照射するこ
とにより、付着ペーストに熱エネルギーを付与して焼成
し、付着ペーストの形状に相当する形状のバンプをバン
プ形成相手に形成できる。
According to this bump forming method, the conductive paste adhered to the bump forming partner is irradiated with a laser beam to apply heat energy to the adhered paste and sinter the paste to form a shape corresponding to the shape of the adhered paste. A bump can be formed on a bump forming partner.

【0013】[0013]

【発明の実施の形態】図1は本発明の一実施形態を示す
もので、図中の1はIC,LSI等の電子回路素子、2
は素子底面に設けられた端子電極、3はバンプ、Pは導
体ペースト、LBはレーザ光である。
FIG. 1 shows an embodiment of the present invention. In FIG. 1, reference numeral 1 denotes an electronic circuit element such as an IC or LSI, and FIG.
Denotes a terminal electrode provided on the bottom surface of the element, 3 denotes a bump, P denotes a conductive paste, and LB denotes a laser beam.

【0014】バンプ形成に際しては、まず、図1(a)
に示すように、端子電極2に導体ペーストPを所定形状
で付着する。導体ペーストPの付着形状はペースト付着
手段により異なるが、円柱状,太鼓状,円錐台状,半球
状等のものがほぼ一定の寸法で形成されるようにする。
In forming a bump, first, FIG.
As shown in (2), a conductive paste P is adhered to the terminal electrode 2 in a predetermined shape. The shape of the conductive paste P to be applied varies depending on the means of applying the paste. However, the conductive paste P should be formed in a substantially constant size such as a cylinder, a drum, a truncated cone, or a hemisphere.

【0015】導体ペーストには、Au,Ag,Cu,A
g−Pt,Ag−pd等から選択された金属粉に有機溶
剤とセルロース誘導体等のバインダを混合して調製した
ものや、これにホウケイ酸鉛等のガラスフリットを加え
たもの等が使用できる。このガラスフリットは、バンプ
3と端子電極2との密着力を高めるためのもので、好ま
しくは400〜700℃の軟化点を有するものが金属粉
に対して5〜20vol%添加される。
The conductor paste includes Au, Ag, Cu, A
Examples thereof include those prepared by mixing an organic solvent and a binder such as a cellulose derivative with a metal powder selected from g-Pt, Ag-pd, and the like, and those prepared by adding a glass frit such as lead borosilicate to this. The glass frit is used to increase the adhesion between the bump 3 and the terminal electrode 2. Preferably, a glass frit having a softening point of 400 to 700 ° C. is added to the metal powder in an amount of 5 to 20 vol%.

【0016】また、導体ペーストPの付着には、スクリ
ーン印刷で代表される周知の厚膜印刷法を使用できる
他、小径ノズルの先端から導体ペーストを押し出してこ
れを付着させる方法等が使用できる。
In addition, a known thick film printing method typified by screen printing can be used for attaching the conductive paste P, and a method of extruding the conductive paste from the tip of a small-diameter nozzle and attaching it can be used.

【0017】次に、同図(b)に示すように、端子電極
2に付着された導体ペーストPに、図示省略の光学系を
介してレーザ光LBを照射する。
Next, as shown in FIG. 1B, the conductor paste P attached to the terminal electrode 2 is irradiated with a laser beam LB via an optical system (not shown).

【0018】レーザ光LBにはYAGレーザ光、詳しく
は、連続パルス波で波長1064.1nm,出力0.4
〜1.0W,周波数3〜7KHzのYAGレーザ光が使
用される。レーザ光照射条件はペースト成分によって適
宜変更されるが、基本的には付着ペーストPに焼成のた
めの熱エネルギーが付与できるように設定する。
The laser beam LB is a YAG laser beam, more specifically, a continuous pulse wave having a wavelength of 1064.1 nm and an output of 0.4.
A YAG laser beam having a frequency of 3 to 7 KHz is used. The laser light irradiation conditions are appropriately changed depending on the paste components, but are basically set so that heat energy for firing can be applied to the adhered paste P.

【0019】このレーザ光照射によって、付着ペースト
P全体に熱エネルギーが加えられ、ペースト中の溶剤が
蒸発しバインダが熱分解して付着ペーストPが焼成さ
れ、付着ペーストPの形状に相当する形状のバンプ3が
端子電極2に形成される。
By this laser beam irradiation, thermal energy is applied to the entirety of the paste P, the solvent in the paste evaporates, the binder is thermally decomposed, and the paste P is baked. The bump 3 is formed on the terminal electrode 2.

【0020】ガラスフリット含有の導体ペーストPの場
合には、レーザ光照射時の熱エネルギーによってガラス
フリットが軟化し、端子電極2との界面付近にガラス過
剰の層が生成されて端子電極2とバンプ3との密着力が
向上する。
In the case of the conductor paste P containing glass frit, the glass frit is softened by thermal energy at the time of laser beam irradiation, and a glass-excess layer is generated near the interface with the terminal electrode 2, and the terminal electrode 2 and the bump are bumped. 3 improves the adhesion.

【0021】ここまでの手順でも所期のバンプ3を形成
することができるが、端子電極2に対するバンプ3の密
着性をより高めるためには、同図(c)に示すように、
バンプ3にさらに熱処理を加えるとよい。
Although the desired bump 3 can be formed by the above procedure, in order to further improve the adhesion of the bump 3 to the terminal electrode 2, as shown in FIG.
It is preferable to further heat-treat the bumps 3.

【0022】熱処理には加熱炉、詳しくは、ヒータ及び
搬送ベルトを具備し400〜600℃に温度保持された
加熱炉が使用される。熱処理条件はペースト成分によっ
て適宜変更されるが、基本的には焼成ペースト3に密着
性向上のための熱エネルギーが付与できるように設定す
る。
For the heat treatment, a heating furnace, more specifically, a heating furnace equipped with a heater and a conveyor belt and maintained at a temperature of 400 to 600 ° C. is used. The heat treatment conditions are appropriately changed depending on the paste components, but are basically set so that heat energy for improving adhesion can be applied to the baked paste 3.

【0023】この熱処理によって、焼成ペースト3全体
に熱エネルギーが加えられ、ペースト中の金属粒子相互
の結合力と金属粒子と端子電極2との結合力が高まり、
バンプ3が端子電極2に強固に密着する。
By this heat treatment, heat energy is applied to the entire baked paste 3, and the bonding force between the metal particles in the paste and the bonding force between the metal particles and the terminal electrode 2 are increased.
The bump 3 firmly adheres to the terminal electrode 2.

【0024】このように、上述のバンプ形成方法によれ
ば、付着ペーストPにレーザ光LBを照射するだけの簡
単な手順にて端子電極2上にバンプ3を形成することが
できる共に、導体ペーストPの付着形状に相当する形状
のバンプ3を安定して得ることができる。
As described above, according to the above-described bump forming method, the bumps 3 can be formed on the terminal electrodes 2 by a simple procedure of simply irradiating the adhesive paste P with the laser beam LB, and the conductive paste can be formed. The bump 3 having a shape corresponding to the shape of the P can be stably obtained.

【0025】しかも、ガラスフリット含有の導体ペース
トPを用いれば、端子電極2とバンプ3との界面付近に
生成されるガラス過剰の層によって端子電極2とバンプ
3との密着力を向上させることができる。
Moreover, if the conductor paste P containing glass frit is used, the adhesion between the terminal electrode 2 and the bump 3 can be improved by the excess glass layer generated near the interface between the terminal electrode 2 and the bump 3. it can.

【0026】また、バンプ3にさらに熱処理を加えるこ
とによって、端子電極2に対するバンプ3の密着性をよ
り高めて、バンプ3と端子電極2との結合を強固なもの
とすることができる。
Further, by further applying a heat treatment to the bumps 3, the adhesion of the bumps 3 to the terminal electrodes 2 can be further increased, and the bonding between the bumps 3 and the terminal electrodes 2 can be strengthened.

【0027】尚、上述の実施形態では、電子回路素子の
端子電極にバンプを形成したものを例示したが、回路基
板の導体にも同様の手順にてバンプを形成できる。
In the above-described embodiment, an example in which a bump is formed on a terminal electrode of an electronic circuit element is illustrated. However, a bump can be formed on a conductor of a circuit board by the same procedure.

【0028】また、導体ペーストに、カーボン,有機色
素,低融点金属粉等のレーザ光吸収促進剤を加えておけ
ば、付着ペーストのレーザ光吸収性を高めてレーザ光照
射による処理効率を高めることができる。
Further, if a laser light absorption promoter such as carbon, an organic dye, and a low melting point metal powder is added to the conductive paste, the laser light absorption of the adhered paste is increased, thereby improving the processing efficiency by laser light irradiation. Can be.

【0029】[0029]

【発明の効果】以上詳述したように、本発明によれば、
付着ペーストにレーザ光を照射するだけの簡単な手順に
てバンプ形成相手にバンプを形成することができる共
に、導体ペーストの付着形状に相当する形状のバンプを
安定して得ることができる。
As described in detail above, according to the present invention,
A bump can be formed on the bump forming partner by a simple procedure of simply irradiating the adhesive paste with laser light, and a bump having a shape corresponding to the shape of the conductive paste can be stably obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係るバンプ形成方法を示す図FIG. 1 is a diagram showing a bump forming method according to the present invention.

【図2】従来のバンプ形成方法を示す図FIG. 2 is a view showing a conventional bump forming method.

【符号の説明】[Explanation of symbols]

1…電子回路素子、2…端子電極、3…バンプ、P…導
体ペースト、LB…レーザ光。
DESCRIPTION OF SYMBOLS 1 ... Electronic circuit element, 2 ... Terminal electrode, 3 ... Bump, P ... Conductor paste, LB ... Laser light.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 鈴木 一高 東京都台東区上野6丁目16番20号 太陽誘 電株式会社内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Ichitaka Suzuki 6-16-20 Ueno, Taito-ku, Tokyo Taiyo Denki Co., Ltd.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 導体ペーストをバンプ形成相手に付着す
る工程と、付着ペーストにレーザ光を照射する工程とを
具備した、 ことを特徴とするバンプ形成方法。
1. A method for forming a bump, comprising: attaching a conductive paste to a bump forming partner; and irradiating the attached paste with laser light.
【請求項2】 レーザ光照射後のペーストに熱を加える
工程を具備した、 ことを特徴とする請求項1記載のバンプ形成方法。
2. The bump forming method according to claim 1, further comprising a step of applying heat to the paste after the laser beam irradiation.
【請求項3】 導体ペーストが、ガラスフリットを含有
する、 ことを特徴とする請求項1または2記載のバンプ形成方
法。
3. The bump forming method according to claim 1, wherein the conductive paste contains glass frit.
【請求項4】 導体ペーストが、レーザ光吸収剤を含有
する、 ことを特徴とする請求項1乃至3の何れか1項記載のバ
ンプ形成方法。
4. The bump forming method according to claim 1, wherein the conductive paste contains a laser light absorbing agent.
JP8287151A 1996-10-29 1996-10-29 Method of forming bumps Withdrawn JPH10135217A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8287151A JPH10135217A (en) 1996-10-29 1996-10-29 Method of forming bumps

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8287151A JPH10135217A (en) 1996-10-29 1996-10-29 Method of forming bumps

Publications (1)

Publication Number Publication Date
JPH10135217A true JPH10135217A (en) 1998-05-22

Family

ID=17713742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8287151A Withdrawn JPH10135217A (en) 1996-10-29 1996-10-29 Method of forming bumps

Country Status (1)

Country Link
JP (1) JPH10135217A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003077307A1 (en) * 2002-03-11 2003-09-18 Toyo Kohan Co., Ltd. Electronic circuit device and porduction method therefor
JP2006200924A (en) * 2005-01-18 2006-08-03 Denso Corp Method of manufacturing pressure sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003077307A1 (en) * 2002-03-11 2003-09-18 Toyo Kohan Co., Ltd. Electronic circuit device and porduction method therefor
JP2006200924A (en) * 2005-01-18 2006-08-03 Denso Corp Method of manufacturing pressure sensor
JP4507890B2 (en) * 2005-01-18 2010-07-21 株式会社デンソー Manufacturing method of pressure sensor

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