JPH10135161A - ウエーハの研磨方法 - Google Patents

ウエーハの研磨方法

Info

Publication number
JPH10135161A
JPH10135161A JP28824396A JP28824396A JPH10135161A JP H10135161 A JPH10135161 A JP H10135161A JP 28824396 A JP28824396 A JP 28824396A JP 28824396 A JP28824396 A JP 28824396A JP H10135161 A JPH10135161 A JP H10135161A
Authority
JP
Japan
Prior art keywords
polishing
wafer
silicon
oxide film
polished
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28824396A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10135161A5 (enExample
Inventor
Yoichi Fujisawa
洋一 藤沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP28824396A priority Critical patent/JPH10135161A/ja
Publication of JPH10135161A publication Critical patent/JPH10135161A/ja
Publication of JPH10135161A5 publication Critical patent/JPH10135161A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
JP28824396A 1996-10-30 1996-10-30 ウエーハの研磨方法 Pending JPH10135161A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28824396A JPH10135161A (ja) 1996-10-30 1996-10-30 ウエーハの研磨方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28824396A JPH10135161A (ja) 1996-10-30 1996-10-30 ウエーハの研磨方法

Publications (2)

Publication Number Publication Date
JPH10135161A true JPH10135161A (ja) 1998-05-22
JPH10135161A5 JPH10135161A5 (enExample) 2004-08-26

Family

ID=17727695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28824396A Pending JPH10135161A (ja) 1996-10-30 1996-10-30 ウエーハの研磨方法

Country Status (1)

Country Link
JP (1) JPH10135161A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000017281A1 (de) * 1998-09-17 2000-03-30 Infineon Technologies Ag Polierflüssigkeit zum polieren von bauelementen, vorzugsweise wafern, insbesondere zum chemisch-mechanischen polieren derartiger bauelemente
JP2001196339A (ja) * 2000-01-11 2001-07-19 Ind Technol Res Inst オンラインのｃｍｐ後洗浄方法
EP1100117A3 (en) * 1999-11-11 2001-08-29 Speedfam Co.,Ltd. A surface treatment method for a silicon wafer
US6696361B2 (en) * 2001-04-24 2004-02-24 United Microelectronics Corp. Post-CMP removal of surface contaminants from silicon wafer
EP1538663A3 (en) * 2003-12-02 2006-05-24 Tokyo Seimitsu Co.,Ltd. Wafer backside processing method and corresponding processing apparatus
JP2011258789A (ja) * 2010-06-10 2011-12-22 Lapis Semiconductor Co Ltd 研削方法及び研削装置
JP2012028647A (ja) * 2010-07-26 2012-02-09 Mitsubishi Chemicals Corp Ｉｉｉ族窒化物結晶基板の製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000017281A1 (de) * 1998-09-17 2000-03-30 Infineon Technologies Ag Polierflüssigkeit zum polieren von bauelementen, vorzugsweise wafern, insbesondere zum chemisch-mechanischen polieren derartiger bauelemente
EP1100117A3 (en) * 1999-11-11 2001-08-29 Speedfam Co.,Ltd. A surface treatment method for a silicon wafer
JP2001196339A (ja) * 2000-01-11 2001-07-19 Ind Technol Res Inst オンラインのｃｍｐ後洗浄方法
US6696361B2 (en) * 2001-04-24 2004-02-24 United Microelectronics Corp. Post-CMP removal of surface contaminants from silicon wafer
EP1538663A3 (en) * 2003-12-02 2006-05-24 Tokyo Seimitsu Co.,Ltd. Wafer backside processing method and corresponding processing apparatus
JP2011258789A (ja) * 2010-06-10 2011-12-22 Lapis Semiconductor Co Ltd 研削方法及び研削装置
JP2012028647A (ja) * 2010-07-26 2012-02-09 Mitsubishi Chemicals Corp Ｉｉｉ族窒化物結晶基板の製造方法

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