JPH10126004A - Semiconductor light emitting device and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a long-life and high luminous-efficiency semiconductor light emitting device which can be manufactured at a low growth temperature suitable for mixed crystal semiconductor including N, and its manufacturing method. SOLUTION: A semiconductor light emitting device 1 is fabricated by sequentially layering a clad layer 3 lattice-matched to a growth substrate 2 as an n-type GaAs layer and formed with an n-type InGaAsP layer having band-gap energy of 1.53eV, an active layer (light emitting layer) 4 as a Gaa In1-a Nb As1-b (0<b<c) layer which is the mixed crystal semiconductor including N, a clad layer 5 formed with a p-type InGaAsP layer, and a cap layer 6 formed with a p<+> type GaAs layer, on the growth substrate 2. The clad layers 3 and 5 is contact with the light emitting layer 4 do not include Al, which reduces occurrence of a non light-emission recombination center as a factor of deterioration, which may occur on the growth surface of a layer including Al by absorption of oxygen in a manufacturing device and a material container into the surface of the growth substrate 2, even at the low growth temperature suitable for the mixed crystal including N. Thus, the long-life and high luminous-efficiency N-V group mixed crystal semiconductor light emitting device 1 can be easily manufactured.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor light emitting device and a method for manufacturing a semiconductor light emitting device, and more particularly, to a semiconductor light emitting device used for a semiconductor laser, a light emitting diode, and the like, and a method for manufacturing the semiconductor light emitting device.

[0002]

2. Description of the Related Art As materials for semiconductor lasers in the 1.3 μm band and the 1.5 μm band, conventionally, InGaAsP / InP is used.
System materials are used. In order to spread the optical subscriber system, cost reduction is demanded. By improving the temperature characteristics of the semiconductor laser, controlling the injection current without using an electronic cooling device or the like. The realization of an APC (auto power control) free system for controlling the power to be constant has been studied. However, since the InGaAsP / InP-based material cannot make the conduction band discontinuity so large in terms of material, carriers easily overflow, and its temperature dependence is large, so that it is difficult to realize the material.

Recently, N-type mixed crystal semiconductor materials containing N in the V group have been studied as a novel semiconductor material. For example, Japanese Patent Application Laid-Open No. 6-334168 discloses that
As a means for producing a group III-V mixed crystal semiconductor device, a technique for epitaxially growing an N-based mixed crystal semiconductor which is a lattice matching material is described. This publication proposes a semiconductor laser and a photodiode using a GaN _0.03 P _0.97 cladding layer lattice-matched to a Si substrate, and a strained superlattice active layer of GaNP and GaNAs.

[0004] Using this technique, III-
It becomes possible to epitaxially grow a group V mixed crystal semiconductor device without generating misfit dislocations,
Monolithic integration with i-electronic devices is also possible.

Further, InGaNAs, AlGaNAs, and Ga can be lattice-matched with GaAs, InP, and GaP substrates.
Examples of mixed crystal semiconductors such as NAs are also described in JP-A-6-037355.

Conventionally, III- which is lattice-matched to a GaAs substrate
Among the group V semiconductors, there was no material having a band gap energy lower than that of GaAs. However, for example, InGaNAs can be lattice-matched to a GaAs substrate, and with a small N composition, a material having a smaller band gap energy than GaAs can be obtained.
It has been found that a light-emitting element having a longer wavelength (e.g., 1.3 μm band) than the emission wavelength of GaAs, which has been difficult to form, can be formed on an As substrate.

[0007] However, InGaNAs is made of GaAs.
Although it is possible to form a light-emitting element having a wavelength longer than the emission wavelength of s, almost no physical properties such as the relationship between the composition and the emission wavelength have been reported.

However, regarding the laminated structure, the Abstracts of
the 1995 International Conferen-ce on Solid State
Devicies and Materials Proceedings (p1016 ~ p10
18). According to this, InGaNAs
Al having a large band gap energy with respect to the active layer
There is a proposal for using GaAs as a cladding layer. In this proceedings, the InGaNAs active layer and the AlGaAs cladding layer have a direct contact structure. In this material system, since the band discontinuity of the conduction band is large, the injected carriers can be efficiently confined in the InGaNAs active layer, and the bad temperature characteristic which is a disadvantage of the conventional long wavelength laser of the InGaAsP / InP material is remarkably reduced. It was possible to improve, and high output (high power) became possible.

[0009]

However, III-
In InGaAs, if InGaAs is grown at a high growth temperature, N is easily separated from the substrate surface and it is difficult to form a film having a large N composition. Therefore, it is necessary to perform low-temperature growth (for example, 680 ° C. or lower). On the other hand, on the contrary, AlGaAs
Since Al is active, O (oxygen) impurities, which adversely affect device characteristics, are likely to be taken into the film during low-temperature growth, and it is desirable to grow at a high temperature (for example, 750 ° C. or higher).

That is, an InGaNAs active layer and an AlG
If an attempt is made to grow a structure in which the aAs cladding layer is in direct contact, after the growth of the lower AlGaAs cladding layer,
It was found that when the temperature of the substrate was lowered in order to grow GaNAs, O (oxygen) in the manufacturing apparatus and the raw material cylinder was taken into the AlGaAs surface, which had a bad influence on the luminous efficiency and the element life.

[0011] Therefore, when the growth temperature of the InGaNAs active layer is increased, there is a problem that the N composition decreases and a required N composition cannot be obtained. this is,
This is a problem peculiar to an N-based mixed crystal semiconductor material containing N in Group V.

Therefore, the present invention according to claim 1 provides the group V with N
In a semiconductor light emitting device in which an N-based mixed crystal semiconductor material containing N is used as an active layer, an N-containing mixed crystal semiconductor Ga _a I
_{n 1-a N b As c} P 1-bc (0 ≦ a ≦ 1,0 <b <1,0
≦ c <1) layer, and the cladding layer, the guide layer or the barrier layer which is in direct contact with the light emitting layer is formed of a semiconductor layer which does not contain Al at a low growth temperature suitable for a mixed crystal semiconductor containing N. In addition, O (oxygen) in the manufacturing apparatus or the raw material cylinder is taken into the growth surface of the layer containing Al to reduce non-radiative recombination centers which cause deterioration of the device, thereby increasing luminous efficiency and improving lifetime. It is intended to provide a long semiconductor light emitting device.

According to a second aspect of the present invention, there is provided a semiconductor light emitting device formed on a GaAs substrate using an N-based mixed crystal semiconductor material containing N in group V as an active layer, wherein the light emitting layer is formed of a mixed crystal semiconductor containing N. _{Ga a In 1-a N b} As c P 1-bc (0 ≦ a ≦ 1,
0 <b <1, 0 ≦ c <1) layer, and a clad layer, a guide layer or a barrier layer which is in direct contact with the light emitting layer is made of Ga _d In _{1-d having} a larger band gap energy than the light emitting layer.
_{N e As f P 1-ef} (0 ≦ d ≦ 1,0 ≦ e <1,0 ≦ f <
1) By forming a layer, a heterostructure is formed on a GaAs substrate in a system not containing Al, and an object thereof is to provide a semiconductor light-emitting element having high luminous efficiency and long life.

According to a third aspect of the present invention, the light emitting layer is made of Ga_a
In_1-aN_bAs_cP_1-bc(0 ≦ a ≦ 1, 0 <b <1,
0 ≦ c <1) layer, and the barrier layer and the guide layer
a_dI n_1-dN_eAs_fP_1-ef(0 ≦ d ≦ 1, 0 ≦ e <
1, 0 ≦ f <1) layer and the cladding layer is a barrier layer
And higher band gap energy than guide layer
Ga_vIn_1-vAs_wP_1-w(0 <v ≦ 1, 0 ≦ w ≦ 1) layer
By using a multi-quantum well in an Al-free system
Form an element using a door and make contact with the GaInNAsP layer
A layer containing no Al, that is, an active region (a light emitting layer and
(A layer in contact with the light emitting layer)
To provide semiconductor light emitting devices with high luminous efficiency and long life
It is intended to be.

According to a fourth aspect of the present invention, the light emitting layer is made of Ga _{a
In 1-a N b As c} P 1-bc (0 ≦ a ≦ 1,0 <b <1,
0 ≦ c <1) layer, and the barrier layer is Ga _d In _1-d N
_{e As f P 1-ef (} 0 ≦ d ≦ 1,0 ≦ e <1,0 ≦ f <
1) is formed by layer, the guide layer, than the light emitting layer of the band gap energy larger _{Ga x In 1-x As y} P 1-y (0 <
x ≦ 1, 0 ≦ y ≦ 1) layers, and the cladding layer is formed of an Al _u Ga _1-u As (0 <u ≦ 1) layer having a larger band gap energy than the barrier layer and the guide layer. Thus, the layer in contact with the GaInNAsP layer is a layer containing no Al, that is, a layer not containing active Al in the active region (a layer in contact with the light emitting layer and the light emitting layer). In addition to providing an element, a semiconductor light-emitting element having good carrier and light confinement efficiency, low threshold current density, and high luminous efficiency, and using AlGaAs having a small thermal resistivity for the cladding layer, Suppress the temperature rise of the active region during operation,
It is an object of the present invention to provide a semiconductor light emitting device that can further reduce deterioration in characteristics such as reduction in luminous efficiency.

According to a fifth aspect of the present invention, the light emitting layer is formed of Ga _{a
In 1-a N b As c} P 1-bc (0 ≦ a ≦ 1,0 <b <1,
0 ≦ c <1) layer, and the barrier layer is Ga _d In _1-d N
_{e As f P 1-ef (} 0 ≦ d ≦ 1,0 ≦ e <1,0 ≦ f <
1) is formed by layer, the guide layer, than the light emitting layer of the band gap energy larger _{Ga x In 1-x As y} P 1-y (0 <
x ≦ 1,0 ≦ y ≦ 1) formed by a layer, the cladding layer, a large _{In s Ga t Al 1-st} P of the band gap energy than the barrier layer and the guide layer (0 <s <1, 0 ≦ t <
1) By forming a layer, the layer in contact with the GaInNAsP layer is a layer containing no Al, that is, a layer containing no active Al in the active region (the layer in contact with the light emitting layer and the light emitting layer), and the luminous efficiency is improved. In addition to providing a semiconductor light emitting device having a high lifetime and a long life, a semiconductor light emitting device having good carrier and light confinement efficiency, a low threshold current density, and a high light emission efficiency is provided, and the AlGaAs system is slightly GaAs.
It is an object of the present invention to provide a semiconductor light-emitting device that can be completely lattice-matched by using an InGaAlP-based material although the lattice constant is shifted from the substrate.

According to a sixth aspect of the present invention, the light emitting layer has a lattice strain within a critical strain amount at which misfit dislocation occurs, thereby reducing the N composition and facilitating fabrication. It is another object of the present invention to provide a semiconductor light emitting device having good luminous efficiency by suppressing a decrease in crystallinity due to an increase in the N composition.

According to a seventh aspect of the present invention, the light emitting layer has a compressive lattice strain within a critical strain amount at which misfit dislocations occur, and the barrier layer has a tensile lattice strain at a critical strain amount at which misfit dislocations occur. By having the strain, a strain-compensated quantum well element, which could not be obtained when AlGaAs was used as the barrier layer, is compensated for the strain of the well layer (light emitting layer), and the appropriate amount of strain is obtained. To increase the degree of freedom of the composition of the well layer or increase the number of well layers,
It is an object of the present invention to provide a semiconductor light emitting device having a high luminous efficiency and a long life and easy to manufacture.

The invention according to claim 8 is characterized in that the light-emitting layer has a tensile lattice strain within a critical strain amount at which a misfit dislocation occurs, and the barrier layer has a compression lattice within a critical strain amount at which a misfit dislocation occurs. By having the strain, the strain of the well layer (light emitting layer) is compensated for as a strain compensation type quantum well element that cannot be obtained when AlGaAs is used as the barrier layer, and an appropriate amount of strain is obtained. The purpose of the present invention is to provide a semiconductor light emitting device that has a high luminous efficiency, a long life, and is easy to manufacture by controlling the composition to have a high degree of freedom and increasing the degree of freedom in the composition of the well layer. And

[0020] The invention of claim 9, wherein the light-emitting _{layer, Ga a In 1-a N} b As 1-b (0 is a mixed crystal semiconductor containing N <b <
1) The light emitting layer is formed of a layer, and the In composition (1-a) of the light emitting layer is 1
By setting the lattice constant larger than 1%, the lattice constant larger than that of the GaAs substrate, and the emission wavelength in the 1.3 μm band, a constant wavelength can be formed even if the N composition is smaller than that of the lattice matching system. It is an object of the present invention to provide a semiconductor light emitting device that can be easily reproduced, suppresses a decrease in crystallinity due to an increase in the N composition, improves luminous efficiency, and can be applied to a light source for optical fiber communication. I have.

According to a tenth aspect of the present invention, Ga containing N is contained.
_{d In 1-d N e As} f P 1-ef (0 ≦ d ≦ 1,0 ≦ e <1,
A cladding layer, a guide layer, or a barrier layer composed of 0 ≦ f <1) layers is formed as a layer having a P composition larger than the P composition of the light emitting layer by the presence or absence of the supply of the P material or by increasing or decreasing the supply amount of the P material. By doing so, it is not necessary to supply or stop the supply of the N source, which is generally supplied in a larger amount than the other group V sources, during the growth of the light emitting layer and the barrier layer. In this case, a method of manufacturing a semiconductor light-emitting element capable of easily manufacturing a semiconductor light-emitting element in which turbulence of a gas flow is suppressed, an interface can be easily controlled, a luminous efficiency is high, and a long lifetime is easily achieved. It is intended to provide.

[0022]

According to a first aspect of the present invention, there is provided a semiconductor light emitting device comprising a light emitting layer and a cladding layer, a light emitting layer and a guide layer and a cladding layer, or a light emitting layer, a barrier layer, a guide layer and a cladding layer. In the semiconductor light emitting device having a stacked structure, the light emitting layer is a mixed crystal semiconductor containing N.
_{a a In 1-a N b} As c P 1-bc (0 ≦ a ≦ 1,0 <b <
1, 0 ≦ c <1), and the cladding layer, the guide layer, or the barrier layer which is in direct contact with the light emitting layer is formed of a semiconductor layer containing no Al, thereby achieving the above object. doing.

According to the above configuration, in a semiconductor light emitting device in which an N-based mixed crystal semiconductor material containing N in Group V is used as an active layer, the light emitting layer is made of an N-containing mixed crystal semiconductor Ga _a In _1-a N _b. A
_{s c P 1- bc (0 ≦} a ≦ 1,0 <b <1,0 ≦ c <1)
Since the cladding layer, the guide layer, or the barrier layer which is formed of a layer and is in direct contact with the light emitting layer is formed of a semiconductor layer containing no Al, even at a low growth temperature suitable for a mixed crystal semiconductor containing N, Al O (oxygen) in the manufacturing apparatus or the raw material cylinder is taken into the growth surface of the layer containing the non-radiative recombination center, which is a source of deterioration of the device, and the semiconductor light emitting device has high luminous efficiency. , And have a long life.

The semiconductor light emitting device according to the second aspect of the present invention
Light emitting layer and cladding layer, light emitting layer and guide layer and cladding layer,
Alternatively, in a semiconductor light emitting device having a stacked structure in which a light emitting layer, a barrier layer, a guide layer, and a clad layer are stacked, and formed on a GaAs substrate, the light emitting layer is a mixed crystal semiconductor containing N, Ga _a In _{1−. a N b As c P 1-} bc (0 ≦ a ≦
1, 0 <b <formed by 1,0 ≦ c <1) layer, the clad layer in direct contact with the luminescent layer, the guide layer or the barrier layer is greater Ga _d bandgap energy than the light-emitting layer _{In 1-d N e As f} P 1-ef (0 ≦ d ≦
The object is achieved by being formed of 1,0 ≦ e <1,0 ≦ f <1) layers.

According to the above configuration, in the semiconductor light emitting element formed on a GaAs substrate and the N-based mixed crystal semiconductor material containing N V group and the active layer, the light-emitting layer, a mixed crystal semiconductor Ga _a containing N _{In 1-a N b As c} P 1-bc (0 ≦ a ≦ 1,0 <
b <formed by 1,0 ≦ c <1) layer, the light emitting layer directly in contact with the cladding layer, a guide layer or the barrier layer, a large Ga _d In _1-d N _e of the band gap energy than the light-emitting layer
As _f P _1-ef (0 ≦ d ≦ 1, 0 ≦ e <1, 0 ≦ f <
1) Since it is formed of layers, a heterostructure can be formed on a GaAs substrate in a system containing no Al, and the semiconductor light emitting device can have high luminous efficiency and long life.

According to a third aspect of the present invention, there is provided a semiconductor light emitting device.
The _{EML, Ga a In 1-a N} b As c P 1-bc (0 ≦
It is formed by a ≦ 1,0 <b <1,0 ≦ c <1) layer, the barrier layer and the guide _{layer, Ga d In 1-d N} e As f P
_1-ef (0 ≦ d ≦ 1, 0 ≦ e <1, 0 ≦ f <1) layers, and the cladding layer has a Ga _v I having a larger band gap energy than the barrier layer and the guide layer.
By being formed in _{n 1-v As w P 1} -w (0 <v ≦ 1,0 ≦ w ≦ 1) layer, has achieved the above objects.

According to the above configuration, the light emitting layer is formed of Ga _a In
_{1-a N b As c P} 1-bc (0 ≦ a ≦ 1,0 <b <1,0 ≦
formed of c <1) layer, the barrier layer and the guide layer, Ga _{d
In 1-d N e As f} P 1-ef (0 ≦ d ≦ 1,0 ≦ e <1,
0 ≦ f <1) layer, and the clad layer is made of Ga having a band gap energy larger than that of the barrier layer and the guide layer.
_v since _{In 1-v As w P 1} -w are formed by (0 <v ≦ 1,0 ≦ w ≦ 1) layer, to form a device using a multi-quantum well in systems that do not contain Al The layer in contact with the GaInNAsP layer can be formed of a layer containing no Al, that is, a layer containing no active Al in the active region (the light emitting layer and the layer in contact with the light emitting layer). Therefore, the semiconductor light emitting element can have high luminous efficiency and long life.

The semiconductor light emitting device according to the fourth aspect of the present invention
The _{EML, Ga a In 1-a N} b As c P 1-bc (0 ≦
It is formed by a ≦ 1,0 <b <1,0 ≦ c <1) layer, the barrier _{layer, Ga d In 1-d N} e As f P 1-ef (0 ≦ d ≦
Formed by 1,0 ≦ e <1,0 ≦ f < 1) layer, the guide layer, the larger band gap energy than the light emitting layer _{Ga x In 1-x As y} P 1-y (0 <x ≦ 1, 0 ≦ y ≦
1) The clad layer is formed of an Al _u Ga _1-u As (0 <u ≦ 1) layer having a band gap energy larger than that of the barrier layer and the guide layer. You have achieved your goal.

According to the above configuration, the light emitting layer is formed of Ga _a In
_{1-a N b As c P} 1-bc (0 ≦ a ≦ 1,0 <b <1,0 ≦
formed of c <1) layer, a barrier _{layer, Ga d In 1-d N} e A
s _f P _{1- ef} (0 ≦ d ≦ 1, 0 ≦ e <1, 0 ≦ f <1)
Forming a layer, the guide layer, than the light emitting layer of the band gap energy larger _{Ga x In 1-x As y} P 1-y (0 <x ≦
1, 0 ≦ y ≦ 1) layer, and the clad layer is formed of an Al _u Ga _1-u As (0 <u ≦ 1) layer having a larger band gap energy than the barrier layer and the guide layer. , The layer in contact with the GaInNAsP layer is a layer containing no Al, that is, an active region (a layer in contact with the light emitting layer and the light emitting layer).
A layer that does not contain active Al, has a high luminous efficiency, and can provide a semiconductor light-emitting element with a long lifetime, good carrier-light confinement efficiency, low threshold current density, A semiconductor light emitting device having high luminous efficiency can be provided, and AlG having a small thermal resistivity
Since aAs is used for the cladding layer, a rise in the temperature of the active region during operation of the device can be suppressed, and deterioration in characteristics such as a decrease in luminous efficiency can be further reduced.

The semiconductor light emitting device according to the invention of claim 5 is
The _{EML, Ga a In 1-a N} b As c P 1-bc (0 ≦
It is formed by a ≦ 1,0 <b <1,0 ≦ c <1) layer, the barrier _{layer, Ga d In 1-d N} e As f P 1-ef (0 ≦ d ≦
Formed by 1,0 ≦ e <1,0 ≦ f < 1) layer, the guide layer, the larger band gap energy than the light emitting layer _{Ga x In 1-x As y} P 1-y (0 <x ≦ 1, 0 ≦ y ≦
Formed by 1) layer, the cladding layer is larger _{In s Ga t Al 1-st} P band gap energy than the barrier layer and the guide layer (0 <s <1, 0 ≦ t <1)
The above object is achieved by being formed of a layer.

According to the above structure, the light emitting layer is formed of Ga _a In
_{1-a N b As c P} 1-bc (0 ≦ a ≦ 1,0 <b <1,0 ≦
formed of c <1) layer, a barrier _{layer, Ga d In 1-d N} e A
s _f P _{1- ef} (0 ≦ d ≦ 1, 0 ≦ e <1, 0 ≦ f <1)
Forming a layer, the guide layer, than the light emitting layer of the band gap energy larger _{Ga x In 1-x As y} P 1-y (0 <x ≦
1,0 ≦ y ≦ 1) formed by a layer, the cladding layer, a large _{In s Ga t Al 1-st} P of the band gap energy than the barrier layer and the guide layer (0 <s <1, 0 ≦ t <1), the layer in contact with the GaInNAsP layer is changed to a layer containing no Al, that is, an active region (a layer in contact with the light emitting layer and the light emitting layer). A layer that does not contain any Al, the semiconductor light emitting element can have a high luminous efficiency and a long life, have a good carrier and light confinement efficiency, a low threshold current density, A highly efficient semiconductor light emitting device can be provided, and A
Although the lattice constant of the lGaAs system slightly deviates from that of the GaAs substrate, complete lattice matching can be achieved by using the InGaAlP system.

The semiconductor light emitting device according to the invention of claim 6 is:
The _{Ga a In 1-a N b} As c P 1-bc (0 ≦ a ≦ 1,0 <
The light-emitting layer formed of b <1, 0 ≦ c <1) achieves the above object by having a lattice strain within a critical strain amount at which misfit dislocation occurs.

According to the above structure, since the light emitting layer has a lattice strain within the critical strain amount at which misfit dislocation occurs, the N composition can be reduced, the fabrication is easy, and the N A decrease in crystallinity with an increase in the composition can be suppressed. Therefore, the luminous efficiency can be further improved.

According to a seventh aspect of the present invention, there is provided a semiconductor light emitting device comprising:
The _{Ga a In 1-a N b} As c P 1-bc (0 ≦ a ≦ 1,0 <
b <1,0 ≦ c <1) layer and the light-emitting layer formed by has a compressive lattice strain within the critical strain amount generated of misfit _{dislocations, Ga d In 1-d N} e As f P 1 _-ef (0 ≦ d ≦ 1,0
The barrier layer formed of ≦ e <1, 0 ≦ f <1) achieves the above object by having a tensile lattice strain within a critical strain amount at which misfit dislocation occurs. .

According to the above structure, the light emitting layer has a compressive lattice strain within a critical strain amount at which misfit dislocations occur, and the barrier layer has a tensile lattice strain within a critical strain amount at which misfit dislocations occur. Therefore, it is possible to obtain a strain-compensated quantum well element that could not be obtained when AlGaAs was used as the barrier layer, and to compensate for the strain in the well layer (light-emitting layer) and have an appropriate amount of strain. By controlling the composition, the degree of freedom of the composition of the well layer can be increased, and the number of well layers can be increased. Therefore, the semiconductor light emitting device can be easily manufactured, have high luminous efficiency, and have a long life.

The semiconductor light emitting device of the invention according to claim 8 is:
The _{Ga a In 1-a N b} As c P 1-bc (0 ≦ a ≦ 1,0 <
b <1,0 ≦ c <1) layer and the light-emitting layer formed by has a tensile lattice strain within the critical strain amount generated of misfit _{dislocations, Ga d In 1-d N} e As f P 1 _-ef (0 ≦ d ≦
The above-mentioned object is achieved because the barrier layer formed of 1,0 ≦ e <1,0 ≦ f <1) layer has a compression lattice strain within a critical strain amount at which misfit dislocation occurs. doing.

According to the above configuration, the light emitting layer has a tensile lattice strain within the critical strain amount at which misfit dislocations occur, and the barrier layer has a compressive lattice strain within the critical strain amount at which misfit dislocations occur. Therefore, it is possible to obtain a strain-compensated quantum well element that could not be obtained when AlGaAs was used as the barrier layer, and to compensate for the strain in the well layer (light-emitting layer) and have an appropriate amount of strain. By controlling the composition, the degree of freedom of the composition of the well layer can be increased, and the number of well layers can be increased. Therefore, the semiconductor light emitting device can be easily manufactured, have high luminous efficiency, and have a long life.

The semiconductor light emitting device according to the ninth aspect of the present invention
The light emitting layer is a Ga _a In _1-a which is _a mixed crystal semiconductor containing N.
N _b As _1-b are formed by (0 <b <1) layer, the light emitting layer I
n composition (1-a) is greater than 11%, and the lattice constant is
The above object is achieved by making the light emitting wavelength larger than that of the GaAs substrate in the 1.3 μm band.

[0039] According to the above configuration, the light-emitting layer, a mixed crystal semiconductor containing _{N Ga a In 1-a N} b As 1-b (0 <b <1)
And the In composition (1-a) of the light emitting layer is 11%
Since it is larger, the lattice constant is larger than that of the GaAs substrate, and the emission wavelength is in the 1.3 μm band, a constant wavelength can be formed even if the N composition is smaller than that of the lattice matching system. Can be easily reproduced and suppressed in crystallinity due to an increase in the N composition, have good luminous efficiency, and can be applied to a light source for optical fiber communication.

According to a tenth aspect of the present invention, there is provided a method of manufacturing a semiconductor light emitting device according to the first to ninth aspects, wherein the N-containing Ga _d In is included.
_{1-d N e As f P} 1-ef (0 ≦ d ≦ 1,0 ≦ e <1,0 ≦
f <1) The clad layer, the guide layer, or the barrier layer composed of a layer is converted into a layer whose P composition is larger than the P composition of the light emitting layer by the presence or absence of the supply of the P material or the increase or decrease of the supply amount of the P material. The purpose is achieved by forming.

According to the above configuration, Ga _d In containing N
_{1-d N e As f P} 1-ef (0 ≦ d ≦ 1,0 ≦ e <1,0 ≦
f <1) A clad layer, a guide layer or a barrier layer composed of a layer is formed as a layer whose P composition is larger than the P composition of the light emitting layer by the presence / absence of P material supply or by increasing or decreasing the supply amount of P material. Therefore, it is not necessary to supply or stop the supply of the N source which is generally supplied in a larger amount than the other group V source during the growth of the light emitting layer and the barrier layer. In this case, the turbulence of the gas flow can be suppressed, and the interface can be easily controlled. Therefore, a semiconductor light emitting device having high luminous efficiency and long life can be easily manufactured.

[0042]

Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings. It should be noted that the embodiments described below are preferred embodiments of the present invention, and therefore, various technically preferable limitations are added. However, the scope of the present invention is not limited to the following description. The embodiments are not limited to these embodiments unless otherwise specified.

FIGS. 1 to 3 are views showing a first embodiment of a semiconductor light emitting device and a method of manufacturing a semiconductor light emitting device according to the present invention. Corresponding.

FIG. 1 is a front sectional view of a semiconductor light emitting device 1 to which a first embodiment of a semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device according to the present invention is applied.

In FIG. 1, a semiconductor light emitting device 1 has a clad layer 3, an active layer 4, a clad layer 5, and a cap layer 6 sequentially laminated on a growth substrate 2 formed of an n-type GaAs layer. An InGaNAs layer, which is an N-based mixed crystal semiconductor material containing N in a group, is formed on a GaAs substrate 2.

The cladding layer 3 is lattice-matched to the growth substrate 2 of GaAs and has a band gap energy of 1.53.
eV InGaAsP structure (n-type InGaP)
AsP layer), which is a material that does not contain Al.

The active layer 4 is a light-emitting layer is formed on the cladding layer 3, InGaNAs layer, i.e., a mixed crystal semiconductor containing _{N Ga a In 1-a N} b As 1-b (0 <b < 1)
It is formed of layers.

The cladding layer 5 is formed on the active layer 4,
Structure using InGaAsP (p-type InGaAsP layer)
It has become. The cap layer 6 is formed of a p ⁺ type GaAs layer.

Next, a method for manufacturing the semiconductor light emitting device 1 will be described with reference to FIG. FIG. 2 shows MOCVD
(Metal Organic Chemical Vapor Deposition) Equipment 1
FIG. 1 is a schematic configuration diagram of a reaction chamber portion of a MOCVD apparatus 1;
0 is a horizontal furnace. The MOCVD apparatus 10 is not limited to a horizontal furnace, and may be a vertical furnace.

The MOCVD apparatus 10 has a reaction chamber 11 inside.
A cooling tube 13 is provided around a quartz reaction tube 12 having a gas supply port, and a gas supply port 14 for supplying a raw material gas and a carrier gas to the reaction chamber 11 is formed in the quartz reaction tube 12. Further, an exhaust pipe 15 for exhausting the gas in the reaction chamber 11 is connected to the quartz reaction tube 12 and connected to an exhaust device (not shown). Reaction chamber 11 of quartz reaction tube 12
Inside, a carbon susceptor 16 is provided, and the carbon susceptor 16 is heated by a high-frequency heating coil 17. The temperature of the carbon susceptor 16 heated by the high-frequency heating coil 17 is detected by a thermocouple 18. The substrate 2 to be grown is set on the carbon susceptor 16.

In order to manufacture the semiconductor light emitting device 1 using the MOCVD apparatus 10, a GaAs substrate is set as the substrate 2 to be grown on the carbon susceptor 16, and the pressure in the reaction chamber 11 is set to 1. 3 × 10 ⁴
The pressure is reduced to Pa. Then, while detecting the temperature by the thermocouple 18, the carbon susceptor 16 is heated by the high-frequency heating coil 17 to control the heating of the GaAs substrate, which is the substrate 2 to be grown, to a predetermined temperature, thereby simultaneously supplying the source gas and the carrier gas. The cladding layer 3, the active layer 4, the cladding layer 5, and the cap layer 6 are sequentially stacked on the GaAs substrate, which is the growth target substrate 2, by supplying the solution into the reaction chamber 11 through the port 14.

First, a case where an InGaNAs layer is formed on a GaAs layer, which is the substrate 2 to be grown, using the MOCVD apparatus 10 will be described.

As a raw material gas, a group III raw material such as T
MG (trimethylgallium), TEG (triethylgallium), TMI (trimethylindium), or
TEI (triethylindium) as a raw material for As, AsH ₃ (arsine) as a raw material for N, DMHy (ＤＭmethylhydrazine) as an organic nitrogen compound, M
MHy (monomethylhydrazine) or TBA
(Tert-butylamine) or the like, and H ₂ as a carrier gas.

When the raw material gas and the carrier gas are simultaneously supplied from the gas supply port 14 into the reaction chamber 11 under the above conditions, the crystal is grown by the thermal decomposition of the raw material gas and the surface reaction of the substrate 2 which is a GaAs layer. Filmed.

Then, TMG as a raw material: 4.0
× 10 ⁻⁶ mol / min to 4.0 × 10 ⁻⁵ mol / mi
n, TMI: 4.4 × 10 ⁻⁷ mol / min to 4.4 ×
10 ^-6 mol / min, AsH ₃ : 6.0 × 10 ^-5 mo
1 / min (0.4 sccm) to 2.2 × 10 ⁻³ mol
/ Min (46.4 sccm), DMHy: 5.0 × 1
H ₂ as a carrier gas is added to 0 ⁻⁴ mol / min to supply a total of 6 l / min, the partial pressure of AsH ₃ is 0.9 to 102 Pa, and the growth temperature is 450 ° C. to 70 ° C.
0 ° C.

Specifically, for example, TMG: 2.0 × 1
0 ^-5 mol / min, TMI: 2.2 × 10 ^-6 mol /
min, AsH ₃ : 3.3 × 10 ⁻⁴ mol / min (7
sccm), DMHy: 6.4 × 10 ⁻³ mol / min
Was used as a raw material gas, and the AsH ₃ partial pressure was 15.4.
When the growth temperature is 630 ° C. in Pa, the growth rate
At 0.1 μm / h, an In _0.11 Ga _0.89 N _0.04 As _0.96 layer was formed on the growth substrate 2 which was a GaAs layer.

The produced In _0.11 Ga _0.89 N _0.04 As
_The semiconductor light emitting device 1 formed as a laminated structure using _0.96 layers is lattice-matched to the substrate 2 to be grown, which is made of GaAs. The semiconductor laser is formed by using an Ar laser (448 nm) as an excitation light source and a Ge-photodiode as a light receiver. Light emitting element 1
Was subjected to PL (photoluminescence) measurement at room temperature. As a result, the center wavelength was about 1.3 μm. This wavelength band can be applied to the optical communication field.

[0058] Also, reducing the TMI, it was grown by increasing the _{AsH 3, In 0.06 Ga 0. 94} N 0.02 As 0.98 layers were formed. This layer was also lattice-matched to the GaAs substrate, and had a PL center wavelength of about 1.17 μm. The emission wavelength of such an InGaNAs layer can be increased by increasing the composition of In and N.

That is, generally, when In is added to GaAs, there is an effect that the lattice constant increases and the band gap energy decreases. In contrast, Ga
When N is added to As, the lattice constant is reduced and the band gap energy is similarly reduced. That is, the addition of N in In _x Ga _1-x As, the band gap energy becomes smaller than the In _x Ga _1-x As, further there are conditions under which the lattice constant matches the GaAs. As described above, since the InGaNAs layer can be lattice-matched to the GaAs substrate, the light-emitting element having a longer wavelength than the emission wavelength of about 870 nm (room temperature) corresponding to the band gap energy of GaAs cannot be lattice-matched to conventional GaAs. InGaAs having a larger lattice constant than GaAs
Can be formed easily and with high quality as compared with the case where is used for the light emitting layer, and it is also possible to form an element having a longer wavelength of 1.3 μm band and 1.5 μm band.

Therefore, using the MOCVD apparatus 10 described above, an In _0.06 Ga _0.94 N _0.02 As _0.98 layer lattice-matched to the substrate 2 to be grown, which is a GaAs layer, is used.
The semiconductor light emitting device 1 having the laminated structure shown in FIG. In this case, as described above, the cladding layers 3 and 5 are made of GaAs.
An InGaAsP layer lattice-matched to the substrate 2 to be grown and having a band cap energy of 1.35 eV is used, and is formed of a material containing no Al.

Using the semiconductor light emitting device 1 wafer,
A device having an insulating film stripe structure with a stripe width of 5 μm and an element length of 200 μm was manufactured, and an LED (Light Em
Itting Diode) Tested the operation and found that the appropriate LED
Got work. The emission spectrum at this time has an operating current of 50 mA and a center wavelength of 117 as shown in FIG.
6 nm, which is a spectrum reflecting the PL spectrum.

As described above, in the semiconductor light emitting device 1 of the present embodiment, the cladding layers 3 and 5 in contact with the InGaNAs active layer, which is the light emitting layer 4, do not contain Al.
An active region (a light emitting layer 4 and a cladding layer 3 in contact with the light emitting layer 4;
Since active Al is not included in 5), even at a low growth temperature suitable for a mixed crystal semiconductor containing N, O in the production apparatus and the raw material cylinder which are easily formed on the growth surface of the Al-containing layer. Growth substrate 2 in which (oxygen) is a GaAs layer
Non-radiative recombination centers, which are a cause of deterioration caused by being taken into the surface of the semiconductor, can be reduced. Therefore, the N-type group V mixed crystal semiconductor light emitting device 1 having high luminous efficiency and long life can be easily manufactured.

In the above embodiment, InG
Although the case where the light emitting layer 4 as the aNAs active layer is lattice-matched to the GaAs layer as the growth substrate 2 has been described, the InGaNAs active layer 4 is completely lattice-matched to the growth substrate 2 as the GaAs layer. It is not necessary that the thickness be within the critical thickness, even if it has strain.

In this embodiment, the case where InGaNAs is used as the N-type group V mixed crystal semiconductor has been described. However, the N-type group V mixed crystal semiconductor is not limited to the above-mentioned one. , P-containing InGaN
The same can be applied to other mixed crystal semiconductors such as AsP.

[0065] Further, as the clad layers 3 and 5, a large _{Ga d In 1-d N e} As f P 1-ef layer band gap energy than the light emitting layer 4 is an active layer (0 ≦ d ≦ 1,0
.Ltoreq.e <1, 0.ltoreq.f.ltoreq.1), and in this case, the same effect can be obtained.

A semiconductor light emitting device 1 having a wavelength of 1.3 μm band (1.25 to 1.35 μm) used for optical communication.
In a material that is lattice-matched to the substrate 2 to be grown, which is GaAs, the composition of the light emitting layer 4 is set to approximately In _0.11 Ga _0.89 N _0.04 A
It can be obtained by setting s _0.96 .

FIG. 4 is a diagram showing a second embodiment of the semiconductor light emitting device and the method for manufacturing the semiconductor light emitting device according to the present invention. In this embodiment, In _0.14 Ga lattice-matched to a GaAs substrate is used. _The multilayer structure is formed by using _0.86 N _0.05 As _0.95 active layer (well layer), and corresponds to claims 1 to 3.

FIG. 4 is a front sectional view showing a laminated structure of the semiconductor light emitting device 20. The semiconductor light emitting device 20 is formed on an n-type GaAs layer on an n-type GaAs layer 21.
a cladding layer 22 formed of an sP layer, a guide layer 23 formed of an InGaAsP layer, a well layer 24 formed of an InGaNAs layer, a guide layer 25 formed of an InGaAsP layer, and a cladding layer formed of a p-type InGaAsP layer 26 and a cap layer 27 formed of a p ⁺ -type GaAs layer
Are sequentially laminated.

The well layer 24 as the light emitting layer is formed of In _0.14 Ga lattice-matched to the substrate 21 to be grown as a GaAs layer.
It is formed of _0.86 N _0.05 As _0.95 layer.

In the semiconductor light emitting device 20, the growth layer 21 made of a GaAs layer is provided on the guide layers (optical waveguide layers) 23 and 25.
Lattice matched and band gap energy is 1.53 eV
Is used, and cladding layers 22 and 26 are made of InGaAs lattice-matched to the growth substrate 21 which is a GaAs layer and having a band gap energy of 1.85 eV.
SCH-SQW structure using sP (Separate Confineme
nt Hetero-Structure-Single Quantum Well structure).

As described above, in the semiconductor light emitting device 20 of the present embodiment, the layers (guide layers 23 and 25) in contact with the well layers (active layers) 24, which are light emitting layers, do not contain Al.
That is, the light emitting layer 24 and the guide layer 23, which are active regions,
25 does not contain active Al, even at a low growth temperature suitable for an N-containing mixed crystal semiconductor, O (oxygen) in a manufacturing apparatus and a raw material cylinder which are easily formed on the growth surface of the Al-containing layer. ) Can be reduced to reduce the number of non-radiative recombination centers that cause degradation caused by being incorporated into the substrate surface, and the semiconductor light-emitting element 20 can have high luminous efficiency and long life. .

When the emission wavelength of the semiconductor light emitting device 20 was measured, the emission wavelength was about 1.3 μm. In this case, by making the In composition of the well layer 24 larger than 11%, the emission wavelength of the bulk becomes longer than 1.3 μm, but the thickness of the well layer (light emitting layer) 24 is set to, for example, 20 μm.
nm or less, and by using the quantum effect,
It can be controlled to 1.3 μm.

In this embodiment, InGa
The well layer (active layer) 24 as an NAs layer is formed of In _0.14 Ga
_{Although 0.86} N _0.05 As _0.95 layer is used, the active layer 24, which is an InGaNAs layer, may have another composition.

The well layer (active layer) 24 is made of GaAs.
Although the lattice matching is performed with the growth substrate 21 as a layer, the lattice matching is not required to be complete, and the thickness may be within the critical film thickness even if it has a strain.

Further, in the present embodiment, the N system V
The case where InGaNAs is used as a group V mixed crystal semiconductor is described.
The present invention can be similarly applied to other mixed crystal semiconductors such as InGaNAsP containing.

As the guide layers 23 and 25, Ga
As layer and is capable of lattice-matched to the growth substrate 21 composition, or even have a strain not lattice matched the critical film thickness within the thickness of _{Ga d In 1-d N e} As f P 1- _ef layer (0 ≦ d
≦ 1, 0 ≦ e <1, 0 ≦ f ≦ 1) can be similarly applied.

Furthermore, since the semiconductor light emitting device 20 does not contain Al in the cladding layers 22 and 26, the guide layer 2
N may be contained in 3, 25. In this case, the guide layers 23 and 25 need to be made of a material having a smaller band gap energy than the clad layers 22 and 26.

Although the SQW structure is used in this embodiment, a multiple quantum well structure using a plurality of well layers may be used. In this case, the guide layer having a small band gap energy than that of the cladding layer _{Ga d In 1-d N e} A
s _f P _1-ef layer (0 ≦ d ≦ 1, 0 ≦ e <1, 0 ≦ f ≦
1) can be used.

FIG. 5 is a diagram showing a third embodiment of the semiconductor light emitting device and the method for manufacturing the semiconductor light emitting device according to the present invention. In this embodiment, In _0.14 Ga lattice-matched to a GaAs substrate is used. _A laminated structure is formed by using an _0.86 N _0.05 As _0.95 active layer, and the laminated structure is formed.
It corresponds to.

FIG. 5 is a front sectional view showing a laminated structure of the semiconductor light emitting element 30. The semiconductor light emitting element 30 is formed on an n-type GaAs layer on an n-type AlGaAs substrate.
a cladding layer 32 formed of an s layer, a guide layer 33 formed of an InGaAsP layer, a well layer (light emitting layer) formed of an InGaNAs layer, a guide layer formed of an InGaAsP layer, and a p-type AlGaAs layer. The formed clad layer 36 and the cap layer 37 formed of the p ⁺ -type GaAs layer are sequentially laminated. And the well layer 34
In lattice-matched to the growth substrate 31 of GaAs
It is formed of a _0.14 Ga _0.86 N _0.05 As _0.95 layer.

That is, the semiconductor light emitting element 30 is made of GaAs.
SCH-SQW structure in which an InGaAsP layer lattice-matched to the growth substrate 31 which is an s layer and having a band gap energy of 1.53 eV is used as the guide layers 33 and 35, and AlGaAs layers having an Al composition of 0.8 are used as the clad layers 32 and 36. It has become.

The semiconductor light emitting device 30 has a structure in which a well layer 34 formed of an InGaN As layer serving as a light emitting layer has an AlGaAs layer.
The cladding layers 32 and 36 formed of the s layer are not in direct contact with each other.
3, 35) do not contain active Al, so that even at a low growth temperature suitable for a mixed crystal semiconductor containing N, O is easily formed on the growth surface of the Al-containing layer and O in the raw material cylinder. A non-radiative recombination center that causes degradation caused by the incorporation of (oxygen) into the substrate surface,
Can be reduced. Therefore, a GaAs substrate lattice-matched long-wavelength semiconductor laser with high luminous efficiency and long life can be formed.

When the emission wavelength of the semiconductor light emitting device 30 was measured, the emission wavelength was about 1.3 μm.

In the present embodiment, the semiconductor light emitting element 30 uses an AlGaAs layer for the cladding layers 32 and 36. Here, for example, as compared with the case where InGaP is used for the cladding layer, the thermal resistivity of AlGaAs is
It is about 1/2 times the thermal resistivity of nGaP. Generally, the thickness of the cladding layer is required to be about 1.5 μm, and a material having a small thermal resistivity causes a small increase in the temperature of the active region at the time of current injection. Is preferred. From such a viewpoint, in the device of the present embodiment, AlGaAs is used for the cladding layers 32 and 36.

Since the AlGaAs layers having a low thermal resistivity, a low refractive index and a large band gap energy are used for the cladding layers 32 and 36 outside the guide layers 33 and 35 made of InGaAsP having a small thickness as described above, carrier The light confinement efficiency further improved, the threshold current density decreased, and the luminous efficiency increased. Thus, GaAs having a long element life, a low threshold current density, and high luminous efficiency.
The semiconductor light emitting device 30, which is a substrate lattice matching long wavelength semiconductor laser, was formed.

The well layer (active layer) 34, which is an InGaNAs layer, may have another composition, and may not be perfectly lattice-matched to the growth substrate 31, which is a GaAs layer, and may have strain. The thickness may be within the critical thickness. Further, in the present embodiment, the case where InGaNAs is used as the N-based group V mixed crystal semiconductor has been described.
It can also be applied to other mixed crystal semiconductors such as InGaNAsP containing.

Further, the guide layers 33 and 35 are made of GaAs.
Lattice matching possible compositions to be growth substrate 31 with a layer or even be not lattice matched have a strain and a thickness of less than the critical thickness _{In x Ga 1-x As y} P 1-y (0 ≦ x <
1, 0 ≦ y ≦ 1). AlGa
The Al composition of the cladding layers 32 and 35, which are As layers, may be another composition as long as the energy of the conduction band is larger than that of the guide layers 33 and 35.

FIG. 6 is a view showing a fourth embodiment of the semiconductor light emitting device and the method of manufacturing the semiconductor light emitting device according to the present invention. In this embodiment, the growth substrate in which the cladding layer is a GaAs layer is used. An InGaAlP layer lattice-matched to the above is used, and corresponds to claims 1, 2 and 5.

In FIG. 6, the semiconductor light emitting element 40 has n
N-type In on a growth substrate 41 formed of n-type GaAs.
Cladding layer 42 formed of GaAlP layer, InGaAs
A guide layer 43 formed of an sP layer, a well layer 44 formed of an InGaNAs layer, a guide layer 45 formed of an InGaAsP layer, a cladding layer 46 formed of a p-type InGaAlP layer, and p ⁺ -type GaAs (cap layer) 47 are sequentially stacked.

The semiconductor light emitting device 40 includes a cladding layer 42,
Reference numeral 46 denotes an InGaAlP layer lattice-matched to a growth substrate 41 formed of a GaAs layer.
The InGaAlP-based composition has a composition having a larger band gap energy than the AlGaAs-based composition, and can increase the carrier and light confinement efficiency. Further, the AlGaAs-based growth substrate 4 is a GaAs layer.
1, the lattice constant is slightly shifted, but InGaAs
The 1P system has an advantage that the lattice can be perfectly matched.

Accordingly, it is possible to form the semiconductor light emitting device 40 which is a GaAs substrate lattice-matched long wavelength semiconductor laser having a high luminous efficiency and a long life.

FIG. 7 is a diagram showing a fifth embodiment of the semiconductor light emitting device and the method of manufacturing the semiconductor light emitting device according to the present invention. In this embodiment, the InGaNAs active layer is made of GaAs.
It is not completely lattice-matched to the substrate and has a strain within a critical film thickness, and corresponds to claim 1, claim 2, claim 4, claim 6, and claim 10. is there.

In FIG. 7, the semiconductor light emitting device 50 has n
N-type Al on a growth substrate 51 formed of n-type GaAs.
Cladding layer 52 formed of GaAs layer, InGaAs
A guide layer 53 formed of a P layer, a well layer (compression layer) formed of an InGaNAs layer, a guide layer 55 formed of an InGaAsP layer, a cladding layer formed of a p-type AlGaAs layer, and p ⁺ -type GaAs. Are sequentially laminated.

The semiconductor light emitting device 50 has the InGaNA
The well layer 54 formed of the s layer has a larger In composition and a lattice constant of Ga than the well layer 34 formed of the InGaNAs layer of the semiconductor light emitting device 30 of the third embodiment.
It is larger than the substrate to be grown 51 which is an As layer and has a compressive strain. Also, when the emission wavelength of the semiconductor light emitting device 50 was measured, the emission wavelength was about 1.3 μm.
In order to use the quantum effect with a lattice-matching material as in the third embodiment, when the wavelength is 1.3 μm, the In composition is larger than 11% and the N composition is larger than 4%. It is possible.

However, N easily separates from the surface of the growing substrate, and it is difficult to obtain an N-based group V mixed crystal semiconductor having a large N composition. Also, according to the experiment of the inventor of the present application,
As the N composition increases, PL (photoluminescence)
The strength was weakened, and deterioration of crystallinity was confirmed. Therefore, at present, the longer the wavelength, the more difficult it is to manufacture.

However, in InGaNAs having the same N composition, the larger the In composition, the larger the lattice constant and the longer the emission wavelength. Therefore, if this property is used, for example, In _0.11 G should be used for lattice matching with the growth substrate 51 formed of a GaAs layer at a wavelength of 1.3 μm.
a _0.89 N _0.04 As _0.96 is required, but when the In composition is larger than 11%, a wavelength of 1.3 μm can be obtained under the condition that the N composition is smaller than 4%. In this case, the lattice constant is the growth substrate 51 which is a GaAs layer.
Larger than. When the lattice constant is larger than that of the growth substrate 51, which is a GaAs layer, a desired wavelength can be obtained with an N composition smaller than the lattice matching condition, so that fabrication can be facilitated. Luminous efficiency can be increased.

Therefore, the semiconductor light emitting device 5 of the present embodiment
0, the composition of In is set to be larger than 11% and InGa
The lattice constant of the well layer (active layer) 54 as an NAs layer is Ga
Since it is larger than the growth substrate 51 which is an As layer,
The semiconductor light emitting device 5 can be formed with a small N composition.
0 can be easily manufactured, and the luminous efficiency can be increased. Further, the semiconductor light emitting device 50 of the present embodiment also has an effect that the threshold current density is reduced by the effect of the strained quantum well. Therefore, it is effective as a light source for optical fiber communication. Of course, the InGaNAs layer can be set to another wavelength.

FIG. 8 is a view showing a semiconductor light emitting device to which the sixth embodiment of the semiconductor light emitting device and the method of manufacturing the semiconductor light emitting device according to the present invention is applied.
The aNAs active layer is not lattice-matched perfectly to the GaAs substrate, but has a strain within a critical thickness, and has a strain within a critical thickness. It corresponds to.

FIG. 8 shows a semiconductor light emitting device 6 according to this embodiment.
FIG. 8 is a front cross-sectional view of the semiconductor light emitting device 60. In FIG.
Cladding layer 62 formed of n-type AlGaAs layer, In
Guide layer 63 made of GaAsP layer, strain compensation type MQ
A W (multiple quantum well) structure layer 64, a guide layer 65 formed of InGaAsP, a clad layer 66 formed of a p-type AlGaAs layer, and a cap layer 67 formed of a p ⁺ -type GaAs layer are sequentially stacked.

The semiconductor light emitting element 60 differs from the fifth embodiment in the following points. That is, the semiconductor light emitting element 6
0 indicates that the active region is a strain-compensated MQW (multiple quantum well)
The MQW structure layer 64 is formed of the
The lattice constant of the GaNAs well layer has a larger compressive strain than that of the growth substrate 61 made of GaAs.
The lattice constant of the InGaAsP barrier layer of the QW structure layer 64 has a smaller tensile strain than the growth substrate 61 made of GaAs.

The InGaNAsP of the MQW structure layer 64
By changing the composition of both the system well layer and the InGaAsP-based barrier layer, a material whose lattice constant can be made larger or smaller than that of the GaAs substrate 61 under the same band gap energy can be changed. System. This cannot be done with an AlGaAs-based barrier layer. That is, compared to the case where an AlGaAs-based barrier layer is used, the use of an InGaAsP-based barrier
It becomes possible to compensate for the strain of the aNAsP-based well layer,
By controlling the composition to have an appropriate amount of strain, the degree of freedom in the composition of the well layer can be increased, and the number of well layers can be increased.

In the present embodiment, the MQW structure 64
Although the InGaNAs well layer is a compression layer and the InGaAsP barrier layer is a tensile strain layer, the composition should also be controlled to have an appropriate amount of strain even if the InGaNAs well layer is a tensile strain layer and the InGaAsP barrier layer is a compression strain layer. Thus, the effect of the strained quantum well can be obtained.

FIG. 9 is a view showing a semiconductor light emitting device and a method for manufacturing the semiconductor light emitting device according to a seventh embodiment of the present invention. In this embodiment, a GaInNAs layer is used as a well layer,
The present invention is applied to a device using a strain-compensated MQW (multiple quantum well) structure using GaInNAsP as a barrier layer, and is described in claim 1, claim 2, claim 4, claim 6, claim 7, or claim 9. Corresponding.

FIG. 9 shows a semiconductor light emitting device 7 of the present embodiment.
9 is a front cross-sectional view of FIG. 9, and in FIG. 9, a semiconductor light emitting device 70 includes a growth target substrate 71 formed of an n-type GaAs layer;
Cladding layer 72 formed of n-type AlGaAs layer, In
Guide layer 73 formed of GaAsP layer, strain-compensated MQ
A W (multiple quantum well) structure layer 74, a guide layer 75 formed of InGaAsP, a cladding layer 76 formed of a p-type AlGaAs layer, and a cap layer 77 formed of a p ⁺ -type GaAs layer are sequentially stacked.

The semiconductor light emitting device 70 has the distortion compensation type MQ
The lattice constant of the InGaNAs well layer of the W (multiple quantum well) structure layer 74 has a larger compressive strain than that of the growth substrate 71 which is a GaAs layer.
The InGaNAsP barrier layer has a smaller tensile strain than the growth substrate 71 which is a GaAs layer. Further, the semiconductor light emitting device 70 includes a cladding layer 72,
An AlGaAs layer 76 is used so that the layer containing Al and the layer containing N are not in direct contact with each other.

Therefore, also in the semiconductor light emitting device 70 of the present embodiment, it is possible to obtain the effect using the strain-compensated MQW (multiple quantum well) structure.

In the present embodiment, InGaNAs
The growth condition of the P barrier layer is the InGa of the MQW structure layer 74.
A source material of P (PH ₃ in this embodiment) is added to the growth conditions of the NAs well layer, and In, Ga,
The supply amounts of the N and As raw materials were not changed.

In general, when P is added to InGaNAs, there is an effect that the band gap energy increases and the lattice constant decreases. The InGaNA of the MQW structure layer 74 of the semiconductor light emitting device 70 of the present embodiment
The growth substrate 7 having a lattice constant of the s-well layer is a GaAs layer.
If it is greater than 1, the lattice constant can be matched to the growth substrate 71, which is a GaAs layer, or made smaller than that of the growth substrate 71, which is a GaAs layer, by controlling the amount of P added.

Further, the semiconductor light emitting device 70 of the present embodiment
In the MQW structure layer 74 of this embodiment, N is contained in both the well layer and the barrier layer. Therefore, in general, an N source that is supplied in a larger amount than other group V sources is turned on / off during the growth of the well layer and the barrier layer. Since there is no need to turn off (supply or not supply to the growth target substrate 71), the interface can be easily controlled.

In the present embodiment, In, Ga,
Although the N and As raw materials were supplied without changing the supply amount, the same can be applied even if the supply amounts were changed.

In the present embodiment, the case where the well layer of the MQW structure layer 74 does not contain P has been described. However, even if P is contained in the well layer, the P composition of the barrier layer is further increased. The method can be applied by increasing the band gap energy of the barrier layer by the method described above.

FIG. 10 is a view showing an eighth embodiment of the semiconductor light emitting device and the method for manufacturing the semiconductor light emitting device according to the present invention. This embodiment is for pumping a solid-state laser in a 0.8 μm band or the like. This is applied to the high-power semiconductor laser.

FIG. 10 is a front sectional view of a semiconductor light emitting device 80 of the present embodiment. In FIG. 10, the semiconductor light emitting device 80 is a substrate 8 formed of an n-type GaAs layer.
1. Cladding layer 82 formed of n-type InGaP layer, I
Guide layer 83 formed of nGaAsP layer, InGaN
A well layer (active layer) 84 formed of an AsP layer;
A guide layer 85 formed of an AsP layer, a clad layer 86 formed of a p-type InGaP layer, and a cap layer 87 formed of a p ⁺ -type GaAs layer are sequentially stacked.

That is, in the semiconductor light emitting device 80, an InGaNAsP layer having a band gap energy of 1.54 eV is used as an active layer (well layer) 84, and GaAs layers are used as guide layers (optical waveguide layers) 83 and 85. An InGaAsP layer lattice-matched to a certain growth substrate 81 and having a band gap energy of 1.83 eV, and the cladding layers 82 and 86 are lattice-matched to a growth substrate 81 which is a GaAs layer and have a band gap energy of 1.91.
It has a SCH-SQW structure using InGaP which is eV. The oscillation wavelength of the semiconductor light emitting device 80 is about 0.81 μm.

Conventionally, in a high-power semiconductor laser for exciting a solid-state laser in the 0.8 μm band or the like, AlGaAs is often used for the cladding layer and the guide layer in contact with the active layer, but optical damage is likely to occur. Had a problem with reliability. Therefore, conventionally, an Al-free material based on an InGaAsP-based material has been experimentally manufactured, but the InGaAsP-based material has a smaller conduction band offset than the AlGaAs-based material, so that carrier leakage from the active layer increases. Although the reliability was good, other device characteristics were not sufficient as a high-output semiconductor laser.

In contrast to such a conventional high-power semiconductor laser, the semiconductor light emitting device 80 of the present embodiment has an active layer (well layer) 84 made of InGaNAsP and doped with N. . Thus, when N is added, the band gap can be reduced and the energy of the conduction band and the valence band can be reduced. Therefore, even when an InGaAs-based material is used for the cladding layers 82 and 86 and the guide layers 83 and 85, the band offset of the conduction band increases and the carrier leak from the active layer 84 decreases. As a result, the threshold current density decreases, and high-temperature characteristics and the like can be improved.

Further, the semiconductor light emitting device 80 includes a light emitting layer 84.
The layer in contact with the InGaNAsP layer does not contain Al, that is, does not contain active Al in the active region (the light-emitting layer 84 and the guide layers 83 and 85), and thus is suitable for a mixed crystal semiconductor containing N. Even at a low growth temperature, non-emission light is generated such that O (oxygen) in the manufacturing apparatus and the raw material cylinder which is easily formed on the growth surface of the Al-containing layer is taken into the substrate surface and causes deterioration. Coupling centers can be reduced. Therefore, it is possible to easily manufacture the high-output semiconductor light emitting device 80 which is a high-output semiconductor laser having high reliability and good other device characteristics.

In this embodiment, the active layer 8
Although an InGaNAsP layer is used as 4, another composition may be used.

The active layer 8 which is an InGaNAsP layer
4 has been described as being completely lattice-bonded to the GaAs layer as the substrate 81 to be grown, but may not be perfectly lattice-matched to the substrate 81 to be grown as a GaAs layer, and may have strain. It is sufficient if the thickness is within the critical film thickness.

Further, as the guide layers 83 and 85, G
a composition capable of lattice-matching with the growth substrate 81 which is an aAs layer;
Alternatively, without lattice matching, even with a strain, the critical film thickness within the thickness, _{i.e., Ga d In 1-d N} e As f P
_{The same} applies to the _1-ef layer (0 ≦ d ≦ 1, 0 ≦ e <1, 0 ≦ f ≦ 1).

In the semiconductor light emitting device 80, since the cladding layers 82 and 86 do not contain Al, the guide layer 83
85 may include N. In this case, the guide layers 83 and 85 need to be made of a material having a smaller band gap energy than the clad layers 82 and 86.

Further, in the present embodiment, the SQW structure is used, but a multiple quantum well structure using a plurality of well layers may be used. In this case, the barrier layer having a small band gap energy than that of the cladding layer Ga _d In _1-d N _e
As _f P _1-ef layer (0 ≦ d ≦ 1, 0 ≦ e <1, 0 ≦ f ≦
1) can be used.

The invention made by the inventor has been specifically described based on the preferred embodiments. However, the present invention is not limited to the above, and various modifications can be made without departing from the gist of the invention. It goes without saying that it is possible.

[0124]

According to the semiconductor light emitting device of the first aspect of the present invention, in a semiconductor light emitting device in which an N-based mixed crystal semiconductor material containing N in group V is used as an active layer, the light emitting layer is formed of a mixed semiconductor containing N. crystal semiconductor _{Ga a In 1-a N b} As c P 1-bc (0 ≦ a ≦ 1,
0 <b <1, 0 ≦ c <1) layer, and the cladding layer, the guide layer or the barrier layer which is in direct contact with the light emitting layer is formed of a semiconductor layer containing no Al. Even at a low growth temperature suitable for a semiconductor, O (oxygen) in a manufacturing apparatus or a raw material cylinder is taken into a growth surface of an Al-containing layer to reduce non-radiative recombination centers which cause deterioration of the device. Accordingly, the semiconductor light emitting device can have high luminous efficiency and long life.

According to the semiconductor light emitting device of the second aspect of the present invention, in a semiconductor light emitting device formed on a GaAs substrate using an N-based mixed crystal semiconductor material containing N in group V as an active layer, N-containing mixed crystal semiconductor Ga _a In _{1-a Nb} A
s _c P _1-bc (0 ≦ a ≦ 1, 0 <b <1, 0 ≦ c <1)
Forming a layer, the light emitting layer directly in contact with the cladding layer, a guide layer or the barrier layer, a large _{Ga d In 1 -d N e As} f P 1-ef (0 ≦ d band gap energy than the emission layer
≦ 1, 0 ≦ e <1, 0 ≦ f <1), a heterostructure can be formed on a GaAs substrate in a system that does not contain Al, and the semiconductor light emitting device has high luminous efficiency. , And have a long life.

[0126] According to the semiconductor light-emitting device of the third aspect of the present invention, the light-emitting _{layer, Ga a In 1-a N} b As c P 1-bc (0 ≦
a ≦ 1,0 <b <formed by 1,0 ≦ c <1) layer, the barrier layer and the guide _{layer, Ga d In 1-d N} e As f P 1-ef (0
≦ d ≦ 1,0 ≦ e <1,0 ≦ f <1) is formed by layer, the cladding layer than the barrier layer and the guide layer of the band gap energy larger _{Ga v In 1-v As w} P 1-w (0 <v ≦
1, 0 ≦ w ≦ 1), the element using the multiple quantum well can be formed in an Al-free system, and the layer in contact with the GaInNAsP layer is an Al-free layer, that is, Active region (light emitting layer and layer in contact with light emitting layer)
Can be formed by a layer containing no active Al. Therefore, the semiconductor light emitting element can have high luminous efficiency and long life.

[0127] According to the semiconductor light-emitting device of the fourth aspect of the present invention, the light-emitting _{layer, Ga a In 1-a N} b As c P 1-bc (0
≦ a ≦ 1,0 <b <formed by 1,0 ≦ c <1) layer, a barrier _{layer, Ga d In 1-d N} e As f P 1-ef (0 ≦ d ≦ 1,
0 ≦ e <1, 0 ≦ f <1) layer, and the guide layer is formed of Ga _x I having a larger band gap energy than the light emitting layer.
_{n 1-x As y P 1} -y (0 <x ≦ 1,0 ≦ y ≦ 1) formed by a layer, the cladding layer, a large Al _u Ga _1-u band gap energy than the barrier layer and the guide layer As (0 <u
≦ 1) The layer in contact with the GaInNAsP layer is a layer containing no Al, that is, a layer containing no active Al in the active region (the layer in contact with the light emitting layer). It is possible to provide a semiconductor light emitting device having a high luminous efficiency and a long life, a good light emitting efficiency, a good carrier and light confinement efficiency, a low threshold current density, and a high luminous efficiency. Since AlGaAs having a small thermal resistivity is used for the cladding layer, it is possible to suppress an increase in the temperature of the active region during operation of the device, and to further reduce deterioration in characteristics such as a decrease in luminous efficiency. it can.

[0128] According to the semiconductor light-emitting device of the fifth aspect of the present invention, the light-emitting _{layer, Ga a In 1-a N} b As c P 1-bc (0
≦ a ≦ 1,0 <b <formed by 1,0 ≦ c <1) layer, a barrier _{layer, Ga d In 1-d N} e As f P 1-ef (0 ≦ d ≦ 1,
0 ≦ e <1, 0 ≦ f <1) layer, and the guide layer is formed of Ga _x I having a larger band gap energy than the light emitting layer.
_{n 1-x As y P 1} -y (0 <x ≦ 1,0 ≦ y ≦ 1) formed by a layer, the cladding layer than the barrier layer and the guide layer of the band gap energy larger In _s Ga _t Al _{1 - st} P
(0 <s <1, 0 ≦ t <1), so that G
The layer in contact with the aInNAsP layer can be a layer that does not contain Al, that is, a layer that does not contain active Al in the active region (the layer that is in contact with the light emitting layer and the light emitting layer). , It has a long life and has good carrier and light confinement efficiency.
A semiconductor light emitting device having a low threshold current density and high luminous efficiency can be provided, and the lattice constant of the AlGaAs system is slightly different from that of the GaAs substrate.
The use of the P system allows perfect lattice matching.

According to the semiconductor light emitting device of the invention, since the light emitting layer has a lattice strain within a critical strain amount at which misfit dislocation occurs, the N composition can be reduced, Fabrication is easy, and a decrease in crystallinity due to an increase in the N composition can be suppressed. Therefore, the luminous efficiency can be further improved.

According to the semiconductor light emitting device of the present invention, the light emitting layer has a compression lattice strain within a critical strain amount at which misfit dislocations occur, and the barrier layer has a critical lattice strain at which misfit dislocations occur. Since it has a tensile lattice strain within the strain amount, a strain-compensated quantum well device that could not be obtained when AlGaAs was used as the barrier layer can be obtained, and the strain of the well layer (light emitting layer) can be compensated. Thus, the composition can be controlled to have an appropriate amount of strain to increase the degree of freedom of the composition of the well layer and increase the number of well layers. Therefore, the semiconductor light emitting device can be easily manufactured, have high luminous efficiency, and have a long life.

According to the semiconductor light emitting device of the present invention, the light emitting layer has a tensile lattice strain within a critical strain amount at which misfit dislocation occurs, and the barrier layer has a critical lattice strain at which misfit dislocation occurs. Since it has a compression lattice strain within the strain amount, it can be a strain-compensated quantum well element that could not be obtained when AlGaAs was used as the barrier layer, and the strain of the well layer (light emitting layer) was compensated. Thus, the composition can be controlled to have an appropriate amount of strain to increase the degree of freedom of the composition of the well layer and increase the number of well layers. Therefore, the semiconductor light emitting device can be easily manufactured, have high luminous efficiency, and have a long life.

According to the semiconductor light emitting device of the ninth aspect, the light emitting layer is made of Ga _a In which is _a mixed crystal semiconductor containing N.
_{1-a N b As 1-} b (0 <b <1) is formed by layer, In composition of the light emitting layer (1-a) is greater than 11%, the lattice constant is larger than GaAs substrates, the emission wavelength Is 1.3 μm
Because it is a band, N
Even if the composition is reduced, a constant wavelength can be formed, and the semiconductor light emitting device is easy to reproduce and suppresses the decrease in crystallinity due to the increase in the N composition. It can be anything that can be done.

According to the method for manufacturing a semiconductor light emitting device of the present invention, the N-containing Ga _d In _{1-d Ne} As _{FP
A 1-ef} (0 ≦ d ≦ 1, 0 ≦ e <1, 0 ≦ f <1) layer clad layer, guide layer or barrier layer is formed by changing the presence / absence of P material supply or the amount of P material supply. , That P
Since the composition is formed in a layer larger than the P composition of the light emitting layer, an N material which is generally supplied in a larger amount than other group V materials is supplied during the growth of the light emitting layer and the barrier layer, or the supply is stopped. For example, in the case of vapor phase growth, the turbulence of the gas flow can be suppressed, and the interface can be easily controlled. Therefore, a semiconductor light emitting device having high luminous efficiency and long life can be easily manufactured.

[Brief description of the drawings]

FIG. 1 is a front sectional view of a growth layer of a semiconductor light emitting device to which a first embodiment of a semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device according to the present invention is applied.

FIG. 2 is an MOC for manufacturing the semiconductor light emitting device of FIG.
The schematic block diagram of the reaction chamber part of a VD apparatus.

FIG. 3 shows an emission spectrum of the semiconductor light emitting device of FIG.

FIG. 4 is a front sectional view of a growth layer of a semiconductor light emitting device to which a second embodiment of the semiconductor light emitting device and the method for manufacturing the semiconductor light emitting device according to the present invention is applied.

FIG. 5 is a front sectional view of a growth layer of a semiconductor light emitting device to which a third embodiment of the semiconductor light emitting device and the method for manufacturing the semiconductor light emitting device according to the present invention is applied.

FIG. 6 is a front sectional view of a growth layer of a semiconductor light emitting device to which a fourth embodiment of the semiconductor light emitting device and the method for manufacturing the semiconductor light emitting device according to the present invention is applied.

FIG. 7 is a front sectional view of a growth layer of a semiconductor light emitting device to which a fifth embodiment of the semiconductor light emitting device and the method of manufacturing the semiconductor light emitting device according to the present invention is applied.

FIG. 8 is a front sectional view of a growth layer of a semiconductor light emitting device to which a sixth embodiment of the semiconductor light emitting device and the method for manufacturing the semiconductor light emitting device according to the present invention is applied.

FIG. 9 is a front sectional view of a growth layer of a semiconductor light emitting device to which a seventh embodiment of the semiconductor light emitting device and the method for manufacturing the semiconductor light emitting device according to the present invention is applied.

FIG. 10 is a front sectional view of a growth layer of a semiconductor light emitting device to which an eighth embodiment of the semiconductor light emitting device and the method for manufacturing the semiconductor light emitting device according to the present invention is applied.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Semiconductor light emitting element 2 Substrate to be grown 3 Cladding layer 4 Active layer 5 Cladding layer 6 Cap layer 10 MOCVD apparatus 11 Reaction chamber 12 Quartz reaction tube 13 Cooling pipe 14 Gas supply port 15 Exhaust pipe 16 Carbon susceptor 17 High frequency heating coil 18 Thermocouple 20, 30, 40, 50, 60, 70, 80 Semiconductor light emitting devices 21, 31, 41, 51, 61, 71, 81 Substrate to be grown 22, 32, 42, 52, 62, 72, 80 Cladding layers 23, 33 , 43, 53, 63, 73, 83 Guide layers 24, 34, 44, 54, 84 Well layers 25, 35, 45, 55, 65, 75, 85 Guide layers 26, 36, 46, 56, 66, 76, 86 clad layer 27, 37, 47, 57, 67, 77, 87 cap layer 64, 74 strain compensation type MQW structure layer

Claims (10)

[Claims] 1. A semiconductor light emitting device having a laminated structure in which a light emitting layer and a clad layer, a light emitting layer, a guide layer, and a clad layer, or a light emitting layer, a barrier layer, a guide layer, and a clad layer are stacked. , N-containing mixed crystal semiconductor Ga _{a
In 1-a N b As c} P 1-bc (0 ≦ a ≦ 1,0 <b <1,
The clad layer, the guide layer or the barrier layer, which is formed of 0 ≦ c <1) layer and is in direct contact with the light emitting layer,
A semiconductor light-emitting element formed of a semiconductor layer containing no Al. 2. A semiconductor formed on a GaAs substrate having a light emitting layer and a cladding layer, a light emitting layer, a guide layer, and a cladding layer, or a light emitting layer, a barrier layer, a guide layer, and a cladding layer. in the light-emitting element, the light-emitting layer, a mixed crystal including N semiconductor _{Ga a in 1-a N b} As c P 1-bc
(0 ≦ a ≦ 1, 0 <b <1, 0 ≦ c <1) layers, and the cladding layer, the guide layer, or the barrier layer which is in direct contact with the light emitting layer has a band gap larger than that of the light emitting layer. energy larger _{Ga d in 1-d N e} As f P
_1-ef (0 ≦ d ≦ 1, 0 ≦ e <1, 0 ≦ f <1) layers of a semiconductor light emitting device. Wherein the light emitting _{layer, Ga a In 1-a N} b As c P
_1-bc (0 ≦ a ≦ 1, 0 <b <1, 0 ≦ c <1) layers, wherein the barrier layer and the guide layer are Ga _d In
_{1-d N e As f P} 1-ef (0 ≦ d ≦ 1,0 ≦ e <1,0 ≦ f
<Formed by 1) layer, the cladding layer is larger _{Ga v In 1-v As w} P 1-w (0 <v ≦ 1,0 ≦ w ≦ bandgap energy than the barrier layer and the guide layer
3. The semiconductor light emitting device according to claim 2, wherein the semiconductor light emitting device is formed of 1) a layer. Wherein said light emitting _{layer, Ga a In 1-a N} b As c P
_1-bc formed by (0 ≦ a ≦ 1,0 <b <1,0 ≦ c <1) layer, the barrier _{layer, Ga d In 1-d N} e As f P
_1-ef are formed in (0 ≦ d ≦ 1,0 ≦ e <1,0 ≦ f <1) layer, the guide layer is larger Ga _x In _1-x As _y bandgap energy than the light-emitting layer P _1-y (0 <
x ≦ 1, 0 ≦ y ≦ 1) layer, and the cladding layer is Al _u Ga _1-u As (0 <u ≦ 1) having a band gap energy larger than that of the barrier layer and the guide layer.
3. The semiconductor light emitting device according to claim 2, wherein the device is formed of a layer. Wherein said light emitting _{layer, Ga a In 1-a N} b As c P
_1-bc formed by (0 ≦ a ≦ 1,0 <b <1,0 ≦ c <1) layer, the barrier _{layer, Ga d In 1-d N} e As f P
_1-ef are formed in (0 ≦ d ≦ 1,0 ≦ e <1,0 ≦ f <1) layer, the guide layer is larger Ga _x In _1-x As _y bandgap energy than the light-emitting layer P _1-y (0 <
formed by x ≦ 1,0 ≦ y ≦ 1) layer, the cladding layer is larger _{In s Ga t Al 1-st} P band gap energy than the barrier layer and the guide layer (0 <s
3. The semiconductor light emitting device according to claim 2, wherein the semiconductor light emitting device is formed of <1, 0 ≦ t <1) layers. Wherein said _{Ga a In 1-a N b} As c P 1-bc (0 ≦
The light emitting layer formed of a ≦ 1, 0 <b <1, 0 ≦ c <1) layers has a lattice strain within a critical strain amount at which misfit dislocations occur. The semiconductor light emitting device according to claim 1. Wherein said _{Ga a In 1-a N b} As c P 1-bc (0 ≦
The light-emitting layer formed of a ≦ 1, 0 <b <1, and 0 ≦ c <1) layers has a compression lattice strain within a critical strain amount at which misfit dislocations are generated, and Ga _d In _{1-d N e As f P 1-ef} (0
≦ d ≦ 1, 0 ≦ e <1, 0 ≦ f <1) The barrier layer has a tensile lattice strain within a critical strain amount at which misfit dislocation occurs. The semiconductor light emitting device according to claim 1, wherein: Wherein said _{Ga a In 1-a N b} As c P 1-bc (0 ≦
The light-emitting layer formed of a ≦ 1, 0 <b <1, and 0 ≦ c <1) layers has a tensile lattice strain within a critical strain amount at which misfit dislocations occur, and has a Ga _d In _1-d N _e As _f P _1-ef
The barrier layer formed of (0 ≦ d ≦ 1, 0 ≦ e <1, 0 ≦ f <1) layers has a compression lattice strain within a critical strain amount at which misfit dislocation occurs. The semiconductor light emitting device according to claim 1, wherein: Wherein said light emitting _{layer, Ga a In 1-a N} b As 1-b (0 <b <1) is a mixed crystal semiconductor containing N is formed by layer,
The In composition (1-a) of the light emitting layer is greater than 11%;
The lattice constant is larger than that of the GaAs substrate, and the emission wavelength is
The semiconductor light emitting device according to any one of claims 2 to 8, wherein the band is in a 1.3 µm band. 10. The method for manufacturing a semiconductor light-emitting device according to claim 1, wherein said Ga- _d I containing N is added.
_{n 1-d N e As f} P 1-ef (0 ≦ d ≦ 1,0 ≦ e <1,0
≦ f <1) The composition of the cladding layer, the guide layer, or the barrier layer is determined by the presence or absence of the supply of the P material or the increase or decrease of the supply amount of the P material.
A method for manufacturing a semiconductor light emitting device, comprising forming a layer having a composition larger than a composition.