JPH10121243A - Vacuum thin film forming device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To observe and measure the magnetic characteristics of a formed film during film formation on a substrate and to improve film formation speed. SOLUTION: A vacuum thin film forming device is intended for the film formation by sputtering a target 7 at the inside of an evacuated chamber 1 and making these sputtering atoms stuck to the substrate 8. In such a case, two Helmholtz coils 13, 14 are so arranged that the substrate 8 enters the virtual outer peripheral surface, and further, a laser device 16 for irradiating the substrate 8 with a laser beam, irradiation optical systems 18, 19, an optical system 18 for receiving a reflected laser beam from the same substrate 8 and a CCD camera 17 are arranged within the virtual outer peripheral surface. A video signal received with the CCD camera 17 is inputted into a control part 23 to execute a prescribed picture processing and arithmetic processing. Meanwhile the magnetic characteristics of the film formed on the same substrate 8 are observed and measured by impressing the power source of a power source circuit 27 on the Helmholtz coils 13, 14, thereby generating a magnetic field and causing the displacement of the substrate 8 during the film formation on the substrate 8, the electron density of plasma in the vicinity of the substrate 8 is made higher by the generated magnetic field. The sputtering atoms are increased in number by this high density plasma, which results in the speed-up of the film formation.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an in-process control technique for a vacuum thin film forming apparatus for forming a thin film on a substrate by a sputtering method, and more particularly, to a magnetic characteristic (MH curve) of a thin film on a substrate during film formation. The present invention relates to a vacuum thin film forming apparatus in which the sputter rate is increased and the film forming rate is increased while observing (2).

[0002]

2. Description of the Related Art In a vacuum thin film forming apparatus of this kind, a discharge gas (inert gas) is placed in a vacuum chamber (vacuum chamber), and a voltage is applied between a cathode of a target placed in the vacuum chamber and an anode of a substrate. In the meantime, a discharge (including a glow discharge) is started, ionizing the discharge gas to generate plasma, and colliding positive ions in the plasma with a target to sputter atoms of the target, The sputtered atoms are attached to a substrate to form a thin film.

More specifically, the inside of the chamber is first evacuated by a vacuum pump (mechanical pump, turbo molecular pump) to a predetermined degree of vacuum, and a discharge gas (for example, Ar gas) is used.
After exhausting the piping on the way to the cylinder,
The variable valve is gradually opened to adjust the pressure of the argon gas in the chamber to a predetermined pressure.

When a constant argon gas pressure is applied to the inside of the chamber, a voltage is applied to a cathode target (for example, a magnetic material) to start a discharge. At this time, the discharge current is kept constant and the stability and uniformity of the discharge are maintained. Hold. Then, as described above, a plasma including positive argon ions and electrons ionized by the discharge is generated between the target and the substrate held by the cathode facing the target. The argon ions in the plasma collide with the target and strike out the target atoms, and the sputtered-out atoms deposit on the anode substrate.

[0005] Thus, a thin film of target atoms is formed on the substrate. At this time, by appropriately setting the distance between the target and the substrate, the pressure of the argon gas (including the flow rate of the reaction gas), the voltage applied between the anode and the cathode, etc., the thin film of the target atoms is appropriately applied to the substrate. Can be formed.

[0006]

By the way, in the vacuum thin film forming apparatus using the sputtering method, in order to reduce the thin film defect of the substrate (that is, to increase the yield of the substrate), the state of the film formation of the substrate (the magnetic characteristics). ) Must be observed and measured. In this case, the substrate is taken out of the vacuum chamber into the atmosphere, and then the magnetic properties are measured using a predetermined measuring device.

As described above, in order to once take out the substrate into the atmosphere, it is not only necessary to stop discharge, operate a valve, and the like, but also to inspect the film formation of the taken out substrate (handling).
It takes a long time, and when the formation of a thin film is not good, the above-described process operation has to be repeated in order to perform the film formation again, which has a disadvantage that it takes a lot of time. For this reason, the film formation on the substrates is performed as efficiently as possible by performing a sampling inspection or the like. However, considering the improvement in yield and the like, it is preferable to inspect the film formations on all the substrates. From such a point of view and the fact that the sputtering method has a lower film formation rate compared to the vacuum evaporation method, the present applicant has made it possible to inspect during film formation and increase the film formation rate. Has led to the development.

SUMMARY OF THE INVENTION The present invention has been made in consideration of the above problems, and has as its object to observe the film formation during the film formation of the substrate, to measure the characteristics thereof, and to shorten the inspection time of the film formation on the substrate. Another object of the present invention is to provide a vacuum thin film forming apparatus capable of improving a film forming speed.

[0009]

In order to achieve the above object, the present invention provides a target and a chamber in which a substrate is disposed opposite to the target, in which a predetermined degree of vacuum is applied and an inert gas for discharge is introduced. Forming a thin film on the substrate by causing a discharge between the target and the substrate to ionize the inert gas and sputtering atoms of the target by the ionized positive ions, and forming a thin film on the substrate by the sputtered atoms. In the device,
At least two coils are arranged in the vacuum chamber and in such a way that the substrate enters the virtual outer peripheral surface thereof;
The substrate is irradiated with laser light, and reflected laser light from the substrate can be received by imaging means.During formation of the thin film on the substrate, a magnetic field is generated by the two coils to apply displacement to the substrate, At least the characteristics of film formation on the substrate are measured by a signal from the imaging unit, and the electron density of the plasma generated by the discharge is increased.

According to the present invention, a target and a chamber in which a substrate is arranged facing the target are placed at a predetermined degree of vacuum and an inert gas for discharge is introduced into the chamber to cause a discharge between the target and the substrate to cause the discharge. In a vacuum thin film forming apparatus that ionizes an active gas and sputters atoms of the target with the ionized positive ions and forms a thin film on the substrate with the sputtered atoms, the vacuum thin film is formed within a virtual outer peripheral surface in the vacuum chamber. Two Helmholtz coils arranged to receive the substrate, means for applying a voltage to the Helmholtz coil, a laser device and an irradiation optical system for irradiating the substrate with laser light, and a laser beam reflected from the substrate. An optical system and a CCD camera for receiving light; Means for observing the film formation on the substrate and calculating the characteristics of the film formation, and displacing the substrate by a magnetic field generated by the two coils during the formation of the thin film on the substrate. The method is characterized in that the film formation on the substrate can be observed and the characteristics thereof can be measured, and the electron density of plasma by the discharge is increased.

In this case, a galvanomirror device is provided in front of the CCD camera. The galvanomirror device changes the direction of laser light from the laser device to observe film formation on the substrate and to form the film. The laser light can be applied to the substrate during the measurement of the characteristics of the target, while the plasma between the target and the substrate is irradiated, and the emission of the plasma can be received by the CCD camera.
While detecting the emission intensity of the plasma with a CD camera, calculating the electron temperature and the electron density of the plasma, and varying the discharge voltage and current to predetermined values based on the calculated electron temperature,
It is preferable that the flow rate of the reactive gas flowing into the chamber be varied to a predetermined value based on the calculated electron density.

On the virtual inner peripheral surface of the Helmholtz coil,
A means for generating a predetermined microwave; a means for receiving the microwave; and a means for measuring an electron density of plasma near the substrate based on a phase difference between the generated microwave and the received microwave. It is preferable that the strength of the generated magnetic field of the Helmholtz coil can be varied in a predetermined manner based on the density. It is preferable that a nonmagnetic material is provided on the virtual inner peripheral surface of the Helmholtz coil. A spectrometer may be used for the measurement of the electron temperature and the electron density.

[0013]

FIG. 1 is a block diagram showing an embodiment of the present invention.
This will be described in detail with reference to FIG. FIG. 1 is a schematic configuration diagram of a vacuum thin film forming apparatus of the present invention. In FIG. 1, a vacuum thin film forming apparatus includes a chamber 1 capable of maintaining a predetermined degree of vacuum.
And a mechanical pump 2 and a turbo molecular pump 3 for exhausting the inside of the chamber 1 to a predetermined extent, and a discharge gas (inert gas; argon) and a reactive gas (oxygen gas, nitrogen gas) are introduced into the chamber 1. (Stop valve and variable valve (piezo valve)) 5 and 6 for allowing the gases to flow into the chamber 1 from the piping 4 and the cylinder.

In the chamber 1, a target (magnetic material) 7 serving as a cathode and a substrate 8 are arranged so as to face the target 7. A cathode 9 connected to a target 7 is fixed to the chamber 1 via an insulating shield plate 10 and a substrate holder 1 for holding a substrate 8 in a cantilever structure.
Reference numeral 1 is fixed to the chamber 1 via an insulating shield plate 12. That is, the chamber 1 is grounded to the ground. Note that the cathode 9 may be a magnetron cathode.

Further, during the film formation of the substrate 8, in order to observe the film-formed magnetic material and measure the magnetic characteristics (MH curve),
Two Helmholtz coils 13 and 14 are provided in the chamber 1.
The Helmholtz coils 13 and 14 are arranged opposite to each other, and the Helmholtz coils 13 and 14
Are arranged so as to be within the virtual outer peripheral surface of. That is, by the magnetic field generated by the Helmholtz coils 13 and 14,
This is because the substrate 8 needs to be displaced (fluctuated). A non-magnetic material is provided on the imaginary inner peripheral surfaces of the Helmholtz coils 13 and 14 in order to prevent an eddy current generated in an iron core or the like. The Helmholtz coils 13 and 14 may be electromagnets or permanent magnets.

A Hall element 15 for detecting a generated magnetic field is provided in a virtual inner peripheral surface of the Helmholtz coils 13 and 14.
Laser device 16 with synchronization shutter 16a and CC
A D camera 17 and an optical beam splitter 18 and a mirror 19 for irradiating the substrate 8 with laser light from the laser device 16 and guiding the reflected laser light from the substrate 8 to a CCD camera (imaging means) 17 are arranged. Have been.

The laser device 16 and the CCD 17 are also used as an optical measuring device for measuring the electron temperature (electron density) of the plasma standing between the target 7 and the substrate 8. Therefore, a galvanometer mirror device (mirror and motor) 20 is arranged in front of the laser device 16. That is, the direction of the laser beam of the laser device 16 is changed between the time of observing and measuring the film formation on the substrate 8 and the time of measuring the electron temperature of the plasma. Further, in order to measure the electron density of the plasma by the microwave method, the Helmholtz coil 13,
A horn antenna 21 for outputting microwaves and a horn antenna 22 for inputting microwaves propagated in the chamber 1 are arranged in the virtual inner peripheral surface 14.

The control system of the vacuum thin film forming apparatus according to the present invention mainly includes a control unit (having a memory operation function) 23, a negative power supply 24 for applying a predetermined negative voltage to the cathode 9,
A current control circuit 25 and a D / A converter section 26; a power supply circuit 27 for applying a positive voltage to the substrate 8 with respect to the target 7; a valve control circuit 28 and a D / A converter section 29 for controlling the piezo valve 6 And

The measuring system of this vacuum thin film forming apparatus also includes two Helmholtz coils 1
A high-frequency power supply 30 for applying a high-frequency power supply (voltage and current) to the power supply 3 and 14;
A voltage measuring device 31 for measuring the voltage and current, a current measuring device 32 and an A / D converter section 33;
7 and a synchronizing signal generator 35 for generating a synchronizing signal for driving the synchronizing shutter 16a in synchronization with a video signal from the CCD camera 17. If the control unit 23 does not have a function of performing image processing on the video signal, a circuit (not shown) for converting the video signal into a processable signal may be provided.
The measurement system includes a microwave source 36 for generating a microwave, a variable phase shifter 37 for shifting the microwave in a predetermined phase, a microwave received by the horn antenna 22, and the microwave having the phase shifted. , And an A / D converter section 39 for inputting the phase comparison result to the control section 22. The microwave is guided to each predetermined portion via the waveguide 40. It has become.

Next, the operation of the vacuum thin film forming apparatus will be described. First, the substrate 3 is held by the substrate holder 11 in a cantilever manner, and the inside of the chamber 1 is evacuated by the mechanical pump 2 to a predetermined degree of vacuum. The pump 3 is set to a higher degree of vacuum. And an inert gas (eg, argon gas)
After exhausting the piping on the way to the cylinder,
Open the piezo valve 6 of the cylinder of argon gas gradually,
Argon gas in the chamber 1 has a predetermined pressure (for example, 10 ^−2).
-10 ^-3 Torr).

When the inside of the chamber 1 has a constant argon gas pressure, the control unit 23 controls the voltage / current control circuit 2.
5 is driven to apply a negative voltage (eg, −600 V to −1100 V) to the cathode 9 of the target 7. At this time, the voltage of the power supply circuit 27 is applied to the substrate 8, and a discharge occurs between the target 7 and the substrate 8. The voltage /
The current circuit 24 is controlled, and the voltage applied to the cathode 9 is adjusted so that the discharge current is constant, that is, the discharge is stable and uniform.

Then, the above-described discharge generates a plasma comprising ionized positive argon ions and electrons between the target 7 and the substrate 8. Positive argon ions in the plasma collide with the target and strike the atoms of the target 7, and the sputtered atoms adhere to the substrate 8 through the voids to form a film. Since the film formation by the sputtering method is already known, the detailed description is omitted.

During the film formation by the sputtering method, a predetermined high-frequency voltage is applied to the Helmholtz coils 13 and 14 in order to observe the magnetic material deposited on the substrate 8. In this case, although not shown, the control unit 23 controls the high-frequency power supply 30 according to the measurement results of the voltage measuring device 31 and the current measuring device 32, and adjusts the strength of the magnetic field generated by the Helmholtz coils 13, 14.

When the generation of the magnetic field is detected by the Hall element 15, the laser device 16 is driven. Then, the laser light of the laser device 16 is irradiated on the substrate 8 via various optical systems (not shown), the beam splitter 18 and the mirror 19, and the reflected laser light is incident on the CCD camera 17 via the beam splitter 18. Therefore, a video signal from the CCD camera 17 is input to the control unit 23. Since the synchronization shutter 16a of the laser device 16 operates in synchronization with the synchronization signal from the synchronization signal generation circuit 35,
The CCD camera 17 captures an image of the film formed on the substrate 8 in a stroboscopic manner.

The control section 23 performs predetermined image processing and arithmetic processing on the input video signal and displays a film deposition image of the substrate 8 on a display, while displacing the substrate 8 by a change in the intensity of the magnetic field generated by the Helmholtz coils 13 and 14. Then, the displacement is captured by the strobe method, and the magnetic characteristics (movement and rotation state (MH curve) of the magnetic domain) of the film-forming magnetic material on the substrate 8 are displayed.
That is, this is a device for measuring magnetic properties using the Kerr effect. As described above, the magnetic characteristics of the film formation of the substrate 8 can be observed and measured (monitored) during the film formation of the substrate 8, that is, the film formation of the substrate 8 can be evaluated in-process. Therefore, it is not necessary to temporarily stop the film formation, take out the film, and inspect it for magnetic properties and the like (there is no need for handling), and the inspection time can be extremely short.
In addition, all the substrates 8 can be inspected, and the yield of the substrates 8 can be greatly increased as compared with the sampling inspection and the like, and the product management is easy. Although the substrate 8 may shift during the film formation, the shift can be measured by the above observation, and the film formation magnetic characteristics of the substrate 8 can also be measured.

On the other hand, the Helmholtz coils 13, 14
, Electrons can be confined in the vicinity of the substrate 8 (that is, the range of the electrons can be increased). As a result, the electron density increases, and the ionization of argon gas is promoted (ionization efficiency increases). Go up). Then, in addition to the plasma generated between the target 7 and the substrate 8, it is as if a second plasma is generated near the substrate 8. Since the density of the plasma can be increased in this manner, the sputter rate can be increased, that is, the number of sputtered atoms can be increased, and as a result, the deposition rate of the substrate 8 can be increased, and the Helmholtz coil The collision of the primary electrons with the substrate 8 can be reduced by the magnetic fields 13 and 14, and the damage to the film formation on the substrate 8 can be reduced.

In the measuring system, the electron density of the plasma between the target 7 and the substrate 8 is monitored by an optical measuring method. Monitoring of electron density by this optical measurement method
The laser light from the laser device 16 is applied to the target 7 and the substrate 8.
The light (emission) from the plasma is captured by the CCD camera 17 through an optical filter, and the video signal is input to the control unit 23 to detect the intensity of the emission wavelength of argon. I do. In this case, the intensity ratio is calculated based on the detected intensity of two wavelengths of the argon peak, and the electron temperature of the plasma is calculated based on the intensity ratio of the two wavelengths. Also, if the electron temperature of the plasma is known, the electron density can be relatively calculated. As a method for detecting the electron density, a spectroscopic analyzer may be used, or the Optogalvanic effect may be used without using the spectroscopic analyzer. For example, when the Optogalvanic effect is used, a wavelength-variable laser beam is irradiated on the plasma, the impedance change of the plasma is continuously measured, and the electronic state (that is, the electron density distribution) of the plasma is measured based on the impedance change.
You can know. Since the electron temperature can be monitored in this manner, the discharge voltage and current (energy applied to the plasma) can be controlled as desired based on the electron temperature. In this case, the control unit 2
3 controls the voltage / current control circuit 25 to adjust the applied voltage and current of the target 7.

The state of the plasma between the target 7 and the substrate 8 can be known from the monitored electron density, and the control unit 23 controls the valve control unit 28 and the D / A converter unit 2.
9, the flow rate of the reactive reaction gas (oxygen gas or nitrogen gas) to the chamber 1 is variably controlled to control the ionization reaction in the chamber 1 as desired (for example, to stabilize the plasma). For example, when the emission intensity ratio is maintained at a predetermined value (for stabilization), the flow rate of oxygen gas is adjusted.

Further, in this measuring system, the electron density of the plasma near the substrate 8 is monitored by a measuring method using microwaves. The monitoring of the electron density by the microwave radiates the microwave from the microwave source 36 to the plasma near the substrate 8 from the horn antenna 21 and passes the microwave through the variable phase shifter 37 to perform a predetermined phase shift. The microwave passing through the plasma is received by the horn antenna 22, and the received microwave and the phase-shifted microwave are compared by the phase comparator 38. In this case, the phase shifter 37 is controlled so that the comparison result becomes zero (the cutoff frequency = 1), and the cutoff density, that is, the electron density of the plasma is calculated based on the control amount.

Since the electron density can be monitored in this manner, the magnetic field generated by the Helmholtz coils 13 and 14 (the magnetic field strength near the substrate 8) is determined based on the electron density.
To increase the electron density of the plasma near the substrate 8. In this case, the high-frequency power supply 30 may be of a variable voltage / current type, and the variable control may be performed by the control unit 23.

As described above, during the film formation of the substrate 8, the electron temperature and the electron density of the plasma between the target 7 and the substrate 8 are monitored, and the monitor controls the flow rate of the reactive gas and discharge voltage. , While controlling the current (energy given to the plasma)
The electron density of the plasma near the substrate 8 is monitored, and the intensity of the magnetic field generated by the Helmholtz coils 13 and 14 is controlled by the monitor. Therefore, the flow rate of the reactive reaction gas, the energy given to the plasma, and the magnetic field intensity can be controlled as desired (the film formation state can be controlled comprehensively). Even when the film thickness is out of the range, the film formation can be easily corrected, and the magnetic properties including the discharge and the gradient film for enhancing the adhesion of the substrate 8 can be easily managed. It can be formed as desired, and as a result, the product can be produced stably.

[0032]

As described above, according to the first aspect of the present invention, at least two coils are arranged in the vacuum chamber and in such a manner that the substrate enters the virtual outer peripheral surface thereof. Then, the substrate is irradiated with laser light, and reflected laser light from the substrate can be received by the imaging means. During the formation of a thin film on the substrate, a magnetic field is generated by the two coils to displace the substrate. In addition, while at least the characteristics of the film formation on the substrate are measured by a signal from the imaging unit, the electron density of the plasma generated by the discharge is increased, so that the characteristics of the film formation are reduced during the film formation. Since the measurement can be performed, the inspection time of the substrate is much shorter than before, and the film formation can be corrected, and the electron density of the plasma can be increased (the ionization efficiency is improved). ) For, increasing sputtering atoms, there is an effect that it is possible to improve the deposition rate.

According to the second aspect of the present invention, two Helmholtz coils are arranged in the vacuum chamber of the vacuum thin film forming apparatus so that the substrate enters the virtual outer peripheral surface, and means for applying a voltage to the Helmholtz coils; A laser device and an irradiation optical system for irradiating the substrate with laser light, an optical system and a CCD camera for receiving reflected laser light from the substrate, and a predetermined image processing of a signal of the received light with the CCD camera; Means for observing the film formation on the substrate, and a means for measuring the characteristics of the film formation on the substrate, wherein a displacement is applied to the substrate by a magnetic field generated by the two coils during the film formation on the substrate. While the film formation on the substrate can be observed and its characteristics can be measured, the electron density of the plasma generated by the discharge is increased, so that the magnetic characteristics of the film formation during the film formation are improved. Can be observed and monitored, that is, the film formation of the substrate 8 can be evaluated in-process, so that it is no longer necessary to temporarily suspend the film formation and take out and inspect the magnetic characteristics and the like as in the related art ( This eliminates the need for handling), and thus the inspection time is very short. In addition, all the boards can be inspected, and the yield of the boards can be greatly increased as compared with the sampling inspection. Since it is easy and the electron density of the plasma can be increased (to increase the ionization efficiency), there is an effect that the deposition rate can be improved.

According to a third aspect of the present invention, in the second aspect, a galvanomirror device is provided in front of the CCD camera, and the direction of the laser beam from the laser device is changed by the galvanomirror device. When observing the film formation and measuring the characteristics of the film formation, the laser light can be irradiated to the substrate, and the plasma between the target and the substrate is irradiated, and the emission of the plasma is measured by the C light emission.
The CCD camera can receive light, the CCD camera detects the emission intensity of the plasma, calculates the electron temperature and electron density of the plasma, and based on the calculated electron temperature, the discharge voltage and current can be varied to predetermined values. On the other hand, since the flow rate of the reactive gas flowing into the chamber can be varied in a predetermined manner according to the calculated electron density, the electron temperature of the plasma can be monitored in addition to the effect of claim 2. Since the density can be monitored, it is possible to control the flow rate of the reactive gas and the energy given to the plasma as desired, to control the film formation on the substrate, and to form the film on the substrate as desired. It has a good effect.

According to the invention of claim 4, according to claim 2 or 3, means for generating a predetermined microwave on the virtual inner peripheral surface of the Helmholtz coil, means for receiving the microwave, and receiving the generated microwave Means for measuring the electron density of the plasma in the vicinity of the substrate by means of microwaves, wherein the intensity of the magnetic field generated by the Helmholtz coil can be varied based on the measured electron density. In addition to the effects of (1), the electron density of the plasma near the substrate can be monitored and the intensity of the magnetic field generated by the Helmholtz coil can be controlled as desired.
When combined with the above, it is possible to comprehensively control the film formation state. For example, even if the result of the above-mentioned inspection during the film formation is out of the specification, the film formation can be easily corrected and the substrate can be attached. It is possible to easily manage the magnetic characteristics including the discharge and the gradient film for enhancing the adhesion, that is, it is possible to form a desired film on the substrate, and as a result, it is possible to stably produce a product.

According to the fifth aspect of the present invention,
Since the non-magnetic material is provided on the virtual inner peripheral surface of the Helmholtz coil of 3 or 4, eddy current can be prevented in addition to the effect of claim 2, 3 or 4, and the magnetic field generated by the Helmholtz coil can be reduced. It can be generated appropriately. According to the invention of claim 6, since the spectrometer is used for measuring the electron temperature and the electron density in claim 3, the same effect as in claim 3 can be obtained.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram for explaining an embodiment of a vacuum thin film forming apparatus of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Chamber 2 Mechanical pump 3 Turbo molecular pump 4 Piping 5, 6 Valve 7 Target 8 Substrate 9 Cathode 10, 12 Insulation shield plate 13, 14, Helmholtz coil 15 Hall element 16 Laser device 16a Synchronization shutter 17 CCD camera 18 Beam splitter 19 Mirror Reference Signs List 20 Galvano mirror device 21, 22 Horn antenna 23 Control unit (calculation storage) 24 Negative power supply 25 Voltage / current control circuit 26, 29 D / A converter unit 27 Power supply circuit 28 Valve control unit 30 High frequency power supply 31 Voltage measuring device 32 Current measurement 33, 39 A / D converter unit 34 CCD driver circuit 35 Synchronous signal generator 36 Microwave source 37 Variable phase shifter unit 38 Phase comparator 40 Waveguide

Claims (6)

[Claims] An interior of a chamber in which a target and a substrate are arranged opposite to the target is placed at a predetermined degree of vacuum, and an inert gas for discharge is charged, and a discharge is caused between the target and the substrate to cause the inert gas to flow. A vacuum thin film forming apparatus that sputters atoms of the target with the ionized positive ions and forms a thin film on the substrate with the sputtered atoms, wherein at least two coils are provided in the vacuum chamber, and Arranged so that the substrate enters the virtual outer peripheral surface of,
The substrate is irradiated with laser light, and reflected laser light from the substrate can be received by imaging means.During formation of the thin film on the substrate, a magnetic field is generated by the two coils to apply displacement to the substrate, A vacuum thin film forming apparatus characterized in that at least characteristics of film formation on the substrate are measured by a signal from the imaging means, and the electron density of plasma by the discharge is increased. 2. An inert gas for discharge is introduced into a chamber in which a target and a substrate disposed opposite to the target are disposed at a predetermined degree of vacuum, and a discharge is caused between the target and the substrate to produce the inert gas. A vacuum thin film forming apparatus that sputters atoms of the target with the ionized positive ions and forms a thin film on the substrate with the sputtered atoms, wherein the substrate is located within a virtual outer peripheral surface in the vacuum chamber. Two Helmholtz coils arranged so as to be inserted, means for applying a voltage to the Helmholtz coil, a laser device and an irradiation optical system for irradiating the substrate with laser light, and receiving reflected laser light from the substrate An optical system and a CCD camera for processing a signal received by the CCD camera in a predetermined manner. Calculation processing, to allow observation of the formation of the substrate, and a means for measuring the characteristics of the film,
During the formation of the thin film on the substrate, the magnetic field generated by the two coils applies a displacement to the substrate to observe the film formation on the substrate and measure its characteristics, while the electron density of the plasma due to the discharge is increased. A vacuum thin film forming apparatus characterized in that the density of the vacuum thin film is increased. 3. A galvanomirror device is provided in front of the CCD camera, and the galvanomirror device changes the direction of laser light from the laser device to observe film formation on the substrate and perform film formation on the substrate. While the substrate can be irradiated with the laser light at the time of measuring the characteristics, the plasma between the target and the substrate is irradiated, and the emission of the plasma can be received by the CCD camera. Calculating the electron temperature and electron density of the same plasma by detecting the intensity, while varying the discharge voltage and current to a predetermined value based on the calculated electron temperature, and changing the discharge voltage and current to the chamber based on the calculated electron density. 3. The vacuum thin film forming apparatus according to claim 2, wherein the flow rate of the reactive reactant gas flowing into the apparatus is variable. 4. A means for generating a predetermined microwave on a virtual inner peripheral surface of the Helmholtz coil, a means for receiving the microwave, and a phase difference between the generated microwave and the received microwave. 4. The vacuum thin film forming apparatus according to claim 2, further comprising means for measuring the electron density of the plasma, wherein the intensity of the generated magnetic field of the Helmholtz coil can be varied based on the measured electron density. 5. The vacuum thin film forming apparatus according to claim 2, wherein a non-magnetic material is provided on a virtual inner peripheral surface of the Helmholtz coil. 6. The vacuum thin film forming apparatus according to claim 3, wherein a spectrometer is used for measuring the electron temperature and the electron density.