JPH10118563A - Formation of thick film pattern - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable patterning with a good shape by removing an unnecessary part through a mask formed on a pattern forming layer while preventing peeling of the mask. SOLUTION: A mask layer 13 is formed by using a paste containing a photosensitive resin, while a small amt. of the photosensitive resin is incorporated into a pattern forming layer 12. During exposure, adhesion strength between the mask layer 13 and the pattern forming layer 12 in the exposed area is increased so that peeling of the mask layer is prevented in the succeeding etching process or sand blasting process. Therefore, a thick film pattern 14 with a good shape can be formed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for forming a thick film pattern such as an electrode and a barrier in a liquid crystal display device, a fluorescent display panel, a plasma display panel, a hybrid integrated circuit and the like.

[0002]

2. Description of the Related Art Conventionally, as a method of forming a thick film pattern of this kind, a material paste is applied over the entire surface and dried to form a pattern formation layer, and then a photoresist insoluble in an organic solvent is formed on the pattern formation layer There is known a method of obtaining a thick film pattern having a predetermined shape by providing a mask by using an organic solvent and removing an exposed portion by etching with an organic solvent. Further, a method is also known in which after a pattern forming layer is formed on a substrate, a mask having a predetermined shape is provided with a resist having sandblast resistance, and the exposed portion is removed by sandblasting.

[0003]

In any of the methods described in the prior art, a pattern forming layer is formed on a substrate, and unnecessary portions thereof are removed through a mask. In some cases, they are peeled off by an etching solution or peeled off by sandblasting, and as a result, good patterning cannot be performed.

The present invention has been made in view of the above problems, and has as its object to remove an unnecessary portion through a mask provided on a pattern forming layer. It is an object of the present invention to provide a method for forming a thick film pattern which can prevent pattern from being peeled off and enables patterning in a good shape.

[0005]

In order to achieve the above object, a method of forming a thick film pattern according to the present invention is characterized by including at least the following steps. (1) A first step of forming a pattern forming layer composed of a material paste containing an inorganic powder and a resin binder as main components and at least a part of the resin binder being a photosensitive resin. (2) A second step of forming a mask layer on the pattern forming layer using a material paste having a higher proportion of the photosensitive resin than the pattern forming layer. (3) A third step of performing pattern exposure from above the mask layer through a mask having a desired pattern. (4) A fourth step of removing at least an unexposed portion of the mask layer by development. (5) A fifth step of removing unnecessary portions of the pattern formation layer by etching or sandblasting using the remaining portion of the mask layer as a mask. (6) A sixth step in which the remaining portion of the pattern forming layer and the remaining portion of the mask layer are baked and brought into close contact with the substrate as a pattern.

In the above thick film pattern forming method, a mask layer is formed with a material paste containing a photosensitive resin, and a small amount of the photosensitive resin is also contained in a material paste of a pattern forming layer thereunder. At the time of pattern exposure, the adhesive strength between the mask layer and the pattern forming layer increases in the exposed portion,
Even when immersed in an etchant or the like, peeling is difficult. Also, it is difficult to peel off during sandblasting.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a process chart of a method of forming a thick film pattern according to the present invention. The procedure will be described below with reference to this drawing.

First, as shown in FIG. 1A, a pattern forming layer 12 is formed on a glass substrate 11, and a mask layer 13 is further formed thereon. The pattern forming layer 12 can be formed by using a material paste having a small proportion of the photosensitive resin, applying the material paste, and drying the paste. Examples of the coating method include a blade coating method and a die coating method. Also,
The material paste previously formed on the film is applied to the glass substrate 11.
It can also be formed by press-transfer. Mask layer 13
Is formed by applying and drying a material paste having a high proportion of the photosensitive resin. The same method is used for applying the mask layer 13.

Next, as shown in FIG. 1B, pattern exposure is performed from above the mask layer 13 through a mask M having a desired pattern. At this time, in the exposed portion, the mask layer 13 is solidified, and the upper portion of the pattern forming layer 12 is also solidified, so that the adhesion is increased. Next, as shown in FIG. 1C, the unexposed portions of the mask layer 13 are removed by development. In this case, the underlying pattern forming layer 13 is also removed in a concave shape.

Subsequently, as shown in FIG. 1D, an etching process is performed using the remaining portion of the mask layer 13 as a mask to remove unnecessary portions of the pattern forming layer 12. When the etching is performed by spraying a mixed solution in which an abrasive is dispersed in an etching solution, the etching is chemically and physically performed, so that the effect is enhanced. Unnecessary portions of the pattern forming layer 12 may be removed by sandblasting instead of etching. In any case, the mask layer 13 does not peel off during processing. And, through the firing process,
The remaining portion of the pattern forming layer 12 and the remaining portion of the mask layer 13 are integrated as shown in FIG. 1 (e) and adhered to the glass substrate 11 to obtain a thick film pattern 14.

[0011]

As described above, according to the present invention,
Since the mask layer is formed from a material paste containing a photosensitive resin and the pattern forming layer is also made to contain a small amount of the photosensitive resin, the adhesive strength between the mask layer and the pattern forming layer at the exposed portion during exposure is reduced. Since the mask layer does not peel off during the subsequent etching or sandblasting, a thick film pattern having a good shape can be formed.

[Brief description of the drawings]

FIG. 1 is a process chart of a thick film pattern forming method according to the present invention.

[Explanation of symbols]

 11 Glass substrate 12 Pattern forming layer 13 Mask layer 14 Pattern

Claims (1)

[Claims] 1. A method for forming a thick film pattern, comprising at least the following steps: (1) A first step of forming a pattern forming layer composed of a material paste containing an inorganic powder and a resin binder as main components and at least a part of the resin binder being a photosensitive resin. (2) A second step of forming a mask layer on the pattern forming layer using a material paste having a higher proportion of the photosensitive resin than the pattern forming layer. (3) A third step of performing pattern exposure from above the mask layer through a mask having a desired pattern. (4) A fourth step of removing at least an unexposed portion of the mask layer by development. (5) A fifth step of removing unnecessary portions of the pattern formation layer by etching or sandblasting using the remaining portion of the mask layer as a mask. (6) A sixth step in which the remaining portion of the pattern forming layer and the remaining portion of the mask layer are baked and brought into close contact with the substrate as a pattern.