JPH10118562A - Formation of thick film pattern - Google Patents

Formation of thick film pattern

Info

Publication number
JPH10118562A
JPH10118562A JP8276763A JP27676396A JPH10118562A JP H10118562 A JPH10118562 A JP H10118562A JP 8276763 A JP8276763 A JP 8276763A JP 27676396 A JP27676396 A JP 27676396A JP H10118562 A JPH10118562 A JP H10118562A
Authority
JP
Japan
Prior art keywords
pattern
photosensitive paste
forming layer
pattern forming
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8276763A
Other languages
Japanese (ja)
Inventor
Satoru Kuramochi
悟 倉持
Yozo Kosaka
陽三 小坂
Masaaki Asano
雅朗 浅野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP8276763A priority Critical patent/JPH10118562A/en
Publication of JPH10118562A publication Critical patent/JPH10118562A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061—Etching masks
    • H05K3/064—Photoresists

Landscapes

  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

PROBLEM TO BE SOLVED: To make it possible to form patterns having good edge shapes by forming a pattern forming layer consisting of a material paste and a photosensitive paste film in superposition on a substrate and subjecting only the photosensitive paste film to pattern exposure, then developing these layers. SOLUTION: The pattern forming layer 12 is formed on a glass substrate 11 by applying the material paste thereon and drying the coating. The photosensitive paste film 13 is formed thereon by coating application or lamination transfer. Next, the photosensitive paste film 13 is subjected to the pattern exposure via a mask M and is subjected to development to remove the unexposed parts of the photosensitive paste film 13 and the pattern forming layer 12 thereunder. The entire part of the glass substrate 11 is baked, by which the parts having the remaining pattern forming layer 12 are tightly adhered to the glass substrate 11 and the thick film patterns 14 are obtd. As a result, the patterns having the good edge shapes are formed regardless of the grain sizes and shape of the powder in the material paste forming the pattern forming layer 12.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、液晶表示装置、蛍
光表示ディスプレイパネル、プラズマディスプレイパネ
ル、混成集積回路等における電極や障壁などの厚膜パタ
ーンを形成する技術に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for forming a thick film pattern such as an electrode and a barrier in a liquid crystal display device, a fluorescent display panel, a plasma display panel, a hybrid integrated circuit and the like.

【０００２】[0002]

【従来の技術】従来、この種の厚膜パターン形成方法の
一つとして、いわゆるフォトリソグラフィ法が知られて
いる。すなわち、感光性の樹脂液に低融点ガラス粉末と
導電性又は絶縁性を有する粉末とを加えて感光性ペース
トとし、これをガラス基板上に塗布して乾燥させ、露光
してからアルカリ性の水溶液で現像した後、焼成工程を
経ることによって所望の厚膜パターンを得る方法であ
る。2. Description of the Related Art Heretofore, a so-called photolithography method has been known as one of such thick film pattern forming methods. That is, a low-melting glass powder and a conductive or insulating powder are added to a photosensitive resin solution to form a photosensitive paste, which is coated on a glass substrate, dried, exposed, and then exposed to an alkaline aqueous solution. This is a method of obtaining a desired thick film pattern by passing through a firing step after development.

【０００３】[0003]

【発明が解決しようとする課題】従来の技術で述べたフ
ォトリソグラフィ法では、ガラス粉末と導電性又は絶縁
性の粉末を含有する感光性ペーストをパターン形成材料
として使用するが、パターニングの精度はその粉体の大
きさ及び形状に影響を受ける。すなわち、粉体の中に大
粒のものが入っていると、光の散乱効果でエッジ形状が
悪くなる。このため、電極パターンをＡｇで形成する場
合などにあっては、粉体の形状と粒度分布を考慮した特
殊なＡｇペーストを使用する必要がある。また、感光性
ペーストを用い、５０μｍ以上の厚い膜厚のパターンを
形成しようとすると、膜厚に比例して横方向へも光が散
乱し、解像度が低下する。さらに、別の問題として、感
光性樹脂に無機粉体を混入してペースト化する時に相互
作用によりゲル化したり、ペーストになった後で経時変
化を起こしたりして使用不能になることがあった。In the photolithography method described in the prior art, a photosensitive paste containing glass powder and conductive or insulating powder is used as a pattern forming material. It is affected by the size and shape of the powder. That is, if large particles are contained in the powder, the edge shape becomes poor due to the light scattering effect. For this reason, when the electrode pattern is formed of Ag or the like, it is necessary to use a special Ag paste in consideration of the shape and particle size distribution of the powder. Further, when a pattern having a thickness of 50 μm or more is formed using a photosensitive paste, light is scattered in the horizontal direction in proportion to the film thickness, and the resolution is reduced. Furthermore, as another problem, when mixing the inorganic powder into the photosensitive resin to form a paste, the mixture may gel due to interaction, or may become unusable due to a change over time after forming the paste. .

【０００４】本発明は、上記のような問題点に鑑みてな
されたものであり、その目的とするところは、フォトリ
ソグラフィ法により簡単にエッジ形状の良好なパターン
形成を可能にした厚膜パターン形成方法を提供すること
にある。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has as its object to form a thick film pattern capable of easily forming a pattern having a good edge shape by a photolithography method. It is to provide a method.

【０００５】[0005]

【課題を解決するための手段】上記目的を達成するた
め、本発明に係る厚膜パターン形成方法は、少なくとも
次の各工程を含むことを特徴とする。 （１）パターン形成層を形成する第１工程。 （２）前記パターン形成層上に感光性ペースト膜を形成
する第２工程。 （３）前記感光性ペースト膜をパターン露光する第３工
程。 （４）現像により前記感光性ペースト膜の未露光部及び
その下の前記パターン形成層を除去する第４工程。 （５）前記基板全体を焼成することにより、前記パター
ン形成層の残った部分を基板に密着させる第５工程。In order to achieve the above object, a method of forming a thick film pattern according to the present invention is characterized by including at least the following steps. (1) First step of forming a pattern forming layer. (2) A second step of forming a photosensitive paste film on the pattern forming layer. (3) A third step of patternwise exposing the photosensitive paste film. (4) A fourth step of removing an unexposed portion of the photosensitive paste film and the pattern forming layer therebelow by development. (5) A fifth step of baking the entire substrate to bring the remaining portion of the pattern formation layer into close contact with the substrate.

【０００６】上記の厚膜パターン形成方法では、材料ペ
ーストとして従来のような感光性ペーストを使用しない
ので、露光時において感光性ペースト膜だけが露光され
る。なお、層間の密着性を改善する目的で光重合性のモ
ノマーを添加してもよい。したがって、パターン形成層
を形成する材料ペースト中の粉体の粒径や形状の如何に
かかわらず、形成されるパターンのエッジ形状がよくな
る。In the above-described method of forming a thick film pattern, since a conventional photosensitive paste is not used as a material paste, only the photosensitive paste film is exposed during exposure. Incidentally, a photopolymerizable monomer may be added for the purpose of improving the adhesion between the layers. Therefore, regardless of the particle size and shape of the powder in the material paste for forming the pattern forming layer, the edge shape of the formed pattern is improved.

【０００７】[0007]

【発明の実施の形態】図１は本発明に係る厚膜パターン
形成方法の工程図であり、以下この図を参照しながらそ
の手順を説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a process chart of a method of forming a thick film pattern according to the present invention. The procedure will be described below with reference to this drawing.

【０００８】まず、図１（ａ）に示すように、ガラス基
板１１上に材料ペーストを塗布して乾燥させることでパ
ターン形成層１２を形成し、さらにその上に感光性ペー
スト膜１３を塗布或いはラミネート転写により形成す
る。材料ペーストは最終的に厚膜パターンとなるもの
で、本発明では感光性のない普通のペーストを使用す
る。その塗布方法としては、ブレードコート、ダイコー
ト等によればよい。或いは、予めフィルム等に形成した
材料を転写する方法でもよい。また、感光性ペースト膜
１３としては６００℃以下で揮発若しくは燃焼、分解す
る感光性樹脂を使用する。First, as shown in FIG. 1A, a pattern forming layer 12 is formed by applying and drying a material paste on a glass substrate 11, and a photosensitive paste film 13 is further applied thereon. It is formed by laminate transfer. The material paste finally becomes a thick film pattern. In the present invention, an ordinary non-photosensitive paste is used. The coating method may be blade coating, die coating or the like. Alternatively, a method of transferring a material previously formed on a film or the like may be used. Further, as the photosensitive paste film 13, a photosensitive resin which volatilizes or burns or decomposes at 600 ° C. or lower is used.

【０００９】次に、図１（ｂ）に示すように、マスクＭ
を介して感光性ペースト膜１３をパターン露光する。光
源としては超高圧水銀灯、メタルハライドランプ等を用
いた装置が使用されるが、感光性ペースト膜１３の感光
波長に応じて適宜選択して使用すればよい。次いで、図
１（ｃ）に示すように現像を行い、感光性ペースト膜１
３の未露光部及びその下のパターン形成層１２を除去す
る。そして、基板全体を焼成することにより、図１
（ｄ）に示すように、パターン形成層１２の残った部分
をガラス基板１１に密着させて厚膜パターン１４を得
る。Next, as shown in FIG.
The pattern exposure of the photosensitive paste film 13 is carried out through. As a light source, an apparatus using an ultra-high pressure mercury lamp, a metal halide lamp, or the like is used, and may be appropriately selected and used according to the photosensitive wavelength of the photosensitive paste film 13. Next, development is performed as shown in FIG.
The unexposed portion 3 and the pattern forming layer 12 thereunder are removed. Then, by firing the entire substrate, the substrate shown in FIG.
As shown in (d), the remaining portion of the pattern forming layer 12 is brought into close contact with the glass substrate 11 to obtain a thick film pattern 14.

【００１０】[0010]

【発明の効果】以上説明したように、本発明によれば、
基板上に材料ペーストからなるパターン形成層と感光性
ペースト膜を重ねて形成し、感光性ペースト膜のみをパ
ターン露光してから現像するようにしたので、パターン
形成層を形成する材料ペースト中の粉体の粒径や形状の
如何にかかわらず、エッジ形状が良好なパターンを形成
することができる。As described above, according to the present invention,
A pattern forming layer made of a material paste and a photosensitive paste film are superposed on a substrate, and only the photosensitive paste film is subjected to pattern exposure and then developed. Regardless of the particle size or shape of the body, a pattern having a good edge shape can be formed.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明に係る厚膜パターン形成方法の工程図で
ある。FIG. 1 is a process chart of a thick film pattern forming method according to the present invention.

【符号の説明】[Explanation of symbols]

１１ ガラス基板 １２ パターン形成層 １３ 感光性ペースト膜 １４ パターン Reference Signs List 11 glass substrate 12 pattern forming layer 13 photosensitive paste film 14 pattern

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】 少なくとも次の各工程を含むことを特徴
とする厚膜パターン形成方法。 （１）パターン形成層を形成する第１工程。 （２）前記パターン形成層上に感光性ペースト膜を形成
する第２工程。 （３）前記感光性ペースト膜をパターン露光する第３工
程。 （４）現像により前記感光性ペースト膜の未露光部及び
その下の前記パターン形成層を除去する第４工程。 （５）前記基板全体を焼成することにより、前記パター
ン形成層の残った部分を基板に密着させる第５工程。1. A method for forming a thick film pattern, comprising at least the following steps: (1) First step of forming a pattern forming layer. (2) A second step of forming a photosensitive paste film on the pattern forming layer. (3) A third step of patternwise exposing the photosensitive paste film. (4) A fourth step of removing an unexposed portion of the photosensitive paste film and the pattern forming layer therebelow by development. (5) A fifth step of baking the entire substrate to bring the remaining portion of the pattern formation layer into close contact with the substrate.
JP8276763A 1996-10-21 1996-10-21 Formation of thick film pattern Pending JPH10118562A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8276763A JPH10118562A (en) 1996-10-21 1996-10-21 Formation of thick film pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8276763A JPH10118562A (en) 1996-10-21 1996-10-21 Formation of thick film pattern

Publications (1)

Publication Number Publication Date
JPH10118562A true JPH10118562A (en) 1998-05-12

Family

ID=17574021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8276763A Pending JPH10118562A (en) 1996-10-21 1996-10-21 Formation of thick film pattern

Country Status (1)

Country Link
JP (1) JPH10118562A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01193730A (en) * 1988-01-29 1989-08-03 Sumitomo Bakelite Co Ltd Thick film working method for polyimide resin
JPH06318539A (en) * 1993-03-12 1994-11-15 Toray Ind Inc Formation of polyimide pattern
JPH0831733A (en) * 1994-07-19 1996-02-02 Japan Synthetic Rubber Co Ltd Forming method of resist pattern and forming method of metallic pattern using aforementioned forming method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01193730A (en) * 1988-01-29 1989-08-03 Sumitomo Bakelite Co Ltd Thick film working method for polyimide resin
JPH06318539A (en) * 1993-03-12 1994-11-15 Toray Ind Inc Formation of polyimide pattern
JPH0831733A (en) * 1994-07-19 1996-02-02 Japan Synthetic Rubber Co Ltd Forming method of resist pattern and forming method of metallic pattern using aforementioned forming method

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