JPH10104424A - Polarizing plate and liquid crystal display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the curvature of the polarizing plate and improve the operability of the sticking of the polarizing plate by making the thickness of a base layer on the side where the polarizing plate is concave larger than the thickness of the other base layer. SOLUTION: This device has a polarizer layer PLL and two base layers SPL1 and SPL2 which are provided on both its sides so as to sandwich the polarizer layer PLL and each consist of at least one layer. An antiglare layer AGL is provided to the polarizing plate POL which is provided to a polarizing plate POL on the display side, i.e., observer side of, for example, a liquid crystal display element where the polarizing plate POL is stuck. Before the polarizing plate POL is stuck on an object such as the liquid crystal display element, the polarizing plate POL is convex on its top surface (antiglare layer AGL) side, so the thickness (b) of the base layer SPL2 on the side where the polarizing plate POL is concave is made larger than the thickness (a) of the base layer SPL1. Consequently, the curvature quantity of the polarizing plate POL is reduced before the polarizing plate POL is stuck on the liquid crystal display element.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a polarizing plate and a liquid crystal display device having the polarizing plate (ie, an LCD).
(Liquid Crystal Display). (Liquid Crystal Display Panel).

[0002]

2. Description of the Related Art FIG. 6 is a partial sectional view showing an example of the structure of a conventional polarizing plate.

[0003] POL is a polarizing plate, PLL is a polarizer layer, SP
L1 is the first support layer of the polarizer layer PLL, SPL2 is the second support layer of the polarizer layer PLL, and ADL is the polarizing plate P
AGL is an adhesive layer for attaching OL, and AGL is an antiglare layer subjected to antiglare treatment.

The polarizer layer PLL is formed of, for example, PVA (polyvinyl alcohol). Support layer SPL
1. The SPL2 is formed of, for example, TAC (triacetylcellulose). Also, anti-glare layer AGL
Is formed by applying, for example, an acrylic resin (acrylic resin adhesive) containing silicon (Si) particles to the surface of the support layer SPL1.

[0005]

In the conventional polarizing plate POL, as shown in FIG. 6, the thickness a of the support layers SPL1 and SPL2 on both sides of the polarizer layer PLL is the same.

For this reason, in the conventional polarizing plate POL, before attaching the polarizing plate POL to an object such as a liquid crystal display element (a liquid crystal cell thereof) via an adhesive layer ADL,
There was a problem that the polarizing plate POL was warped. Polarizing plate PO
The warpage of L is, for example, convex on the surface (anti-glare layer AGL) side.

As a result, when the polarizing plate POL is moved while being sucked and held by using a vacuum chuck or the like, the polarizing plate POL cannot be sucked, and the work of attaching the polarizing plate POL to the liquid crystal display element is reduced. In addition, mistakes in attaching the polarizing plate POL and an operation of reproducing (reapplying) the polarizing plate POL increase.

An object of the present invention is to provide a structure of a polarizing plate capable of reducing the warpage of the polarizing plate and a liquid crystal display device having a liquid crystal display device provided with the polarizing plate.

[0009]

In order to solve the above-mentioned problems, the present invention relates to a polarizing plate having a polarizer layer interposed therebetween and a support layer on both sides thereof. Is made thicker than the thickness of the other support layer.

That is, a polarizing plate of the present invention is a polarizing plate comprising: a polarizer layer; and two support layers each having at least one layer provided on both sides of the polarizer layer so as to sandwich the polarizer layer. The thickness of one of the support layers is larger than the thickness of the other support layer.

In a polarizing plate having a polarizer layer, two support layers provided on both sides of the polarizer layer so as to sandwich the polarizer layer, and an adhesive layer for attaching the polarizer layer, The thickness of one of the support layers is larger than the thickness of the other support layer.

Further, the thickness of the support layer on the side of the pressure-sensitive adhesive layer is larger than the thickness of the other support layer.

Further, the liquid crystal display device of the present invention has a liquid crystal display element, and a polarizing plate is adhered to at least one of the front and back surfaces of the liquid crystal display element via an adhesive layer. In the above 2, the polarizing plate is provided on both sides thereof so as to sandwich the polarizer layer and the polarizer layer.
And a thickness of one of the support layers is larger than a thickness of the other support layer.

In the present invention, the amount of warpage of the polarizing plate is reduced by a simple structure in which the thickness of the support layer on the side where the warp of the polarizing plate is concave is made larger than the thickness of the other support layer. be able to.

[0015]

Embodiments of the present invention will be described below in detail with reference to the drawings. In the drawings described below, those having the same functions are denoted by the same reference numerals, and the repeated description thereof will be omitted.

FIG. 1 is a partial sectional view showing the structure of a polarizing plate according to an embodiment of the present invention.

POL is a polarizing plate, PLL is a polarizer layer, SP
L1 is the first support layer of the polarizer layer PLL, SPL2 is the second support layer of the polarizer layer PLL, and ADL is the polarizing plate P
AGL is an adhesive layer for attaching OL, and AGL is an antiglare layer subjected to antiglare treatment.

The polarizer layer PLL is formed of, for example, PVA (polyvinyl alcohol). Support layer SPL
1. The SPL2 is formed of, for example, TAC (triacetylcellulose). Also, anti-glare layer AGL
Is formed by applying, for example, an acrylic resin (acrylic resin adhesive) containing silicon (Si) particles to the surface of the support layer SPL1.

The anti-glare layer AGL is attached to the polarizing plate POL, for example, on the display side of a liquid crystal display element (to be described in detail later with reference to FIGS. 2 and 3), that is,
It is provided on a polarizing plate POL attached to the observer side.

In this embodiment, before the polarizing plate POL is attached to an object such as a liquid crystal display element, the polarizing plate POL is warped because the surface (anti-glare layer AGL) is convex.
The thickness b of the support layer SPL2 on the side where the warp of the polarizing plate POL is concave was made larger than the thickness a of the support layer SPL1 as shown in FIG. This makes it possible to reduce the amount of warpage of the polarizing plate POL before attaching the polarizing plate POL to, for example, a liquid crystal display element via the adhesive layer ADL.

As a result, the work of attaching the polarizing plate POL to the liquid crystal display element is improved, and the number of mistakes in attaching the polarizing plate POL and the work of reproducing (re-attaching) are reduced.

<< Active matrix liquid crystal display device >>
Hereinafter, as an example of an apparatus having a polarizing plate, an active
A matrix type color liquid crystal display device will be described.

<< Outline of Matrix Part >> FIG. 3 is a plan view showing one pixel of an active matrix type color liquid crystal display device and its periphery. FIG. 2 shows the pixel part of the matrix in the center (b), on both sides (a), FIG. 2C is a cross-sectional view showing the vicinity of a liquid crystal display panel (that is, a liquid crystal display element; LCD) and the vicinity of a video signal terminal.

As shown in FIG. 3, each pixel has two adjacent scanning signal lines (gate signal lines or horizontal signal lines) GL.
And two adjacent video signal lines (drain signal lines or vertical signal lines) DL (in a region surrounded by four signal lines). Each pixel includes a thin film transistor TFT, a transparent pixel electrode ITO1, and a storage capacitor Cadd. The scanning signal lines GL extend in the left-right direction in the figure, and a plurality of scanning signal lines GL are arranged in the up-down direction. Video signal line DL
Extend in the up-down direction and are arranged in a plurality in the left-right direction.

As shown in FIG. 2, a thin film transistor TFT and a transparent pixel electrode ITO1 are formed on the lower transparent glass substrate SUB1 side with respect to the liquid crystal layer LC, and a color filter FIL and a light-shielding element are formed on the upper transparent glass substrate SUB2 side. A black matrix pattern BM is formed. A silicon oxide film SIO formed by dipping or the like is provided on both surfaces of the transparent glass substrates SUB1 and SUB2.

A light shielding film BM and a color filter FI are provided on the inner surface (the liquid crystal LC side) of the upper transparent glass substrate SUB2.
L, protective film PSV2, common transparent pixel electrode ITO2 (CO
M) and an upper alignment film ORI2 are sequentially laminated.

<< Outline of Matrix Peripheral >> In FIG. 2 described above, the cross section taken along line 2-2 in FIG. 3 is the center, the cross section near the panel angle in FIG. 15 is connected to the left side, and the video signal drive circuit is connected to the right side. FIG. 3 is a diagram showing a cross section near an external connection terminal DTM to be provided.

[0028] Any For this panel In the manufacture of, if small size divided from simultaneously processing a plurality fraction of the device in one glass substrate for increased throughput, manufacturing facilities if large size shared A glass substrate of a standardized size is processed even in a variety, and the size is reduced to a size suitable for each type. In each case, the glass is cut after passing through one process.

Between the transparent glass substrates SUB1 and SUB2, a seal pattern SL is formed along the edge of the transparent glass substrates SUB1 and SUB2 so as to seal the liquid crystal LC except for a liquid crystal sealing opening (not shown). The sealing material is made of, for example, an epoxy resin. The common transparent pixel electrode ITO2 on the upper transparent glass substrate SUB2 side is
In at least one place, in this embodiment, the lower transparent glass substrate SU is formed of a silver paste material AGP at four corners of the panel.
It is connected to the lead wiring INT formed on the B1 side. The lead wiring INT is formed in the same manufacturing process as the later-described gate terminal (not shown) and drain terminal DTM.

Each layer of the alignment films ORI1, ORI2, the transparent pixel electrode ITO1, and the common transparent pixel electrode ITO2 is formed inside the seal pattern SL.

The liquid crystal LC is sealed in a region partitioned by the seal pattern SL between the lower alignment film ORI1 and the upper alignment film ORI2 for setting the direction of the liquid crystal molecules. The lower alignment film ORI1 is formed above the protective film PSV1 on the lower transparent glass substrate SUB1 side.

In this liquid crystal display device, various layers are separately stacked on the lower transparent glass substrate SUB1 side and the upper transparent glass substrate SUB2 side, and a seal pattern SL is formed on the substrate SUB2.
Side, the lower transparent glass substrate SUB1 and the upper transparent glass substrate SUB2 are overlapped, liquid crystal LC is injected from the opening INJ of the sealing material SL, the injection port INJ is sealed with epoxy resin or the like, and the upper and lower substrates are sealed. Assembled by cutting.

<< Polarizing Plates POL1, POL2 >> Polarizing Plate PO
As shown in FIG. 2, L1 and POL2 are formed on the outer surfaces of the lower transparent glass substrate SUB1 and the upper transparent glass substrate SUB2, respectively. Polarizing plates POL1, POL
As shown in FIG. 1, the polarizing plate 2 has a structure in which the warp of the polarizing plate is concave, that is, the transparent glass substrates SUB1 and SUB2.
The thickness of the support layer SPL2 on the side is larger than the thickness of the support layer SPL1. This makes it possible to reduce the amount of warpage of the polarizing plate POL before attaching. The anti-glare layer AGL shown in FIG.
It is provided only on the display side of L, that is, for example, only the polarizing plate POL2 that is attached to the observer side.

<< Thin Film Transistor TFT >> Next, FIG.
Returning to FIG. 3, the configuration on the TFT substrate SUB1 side will be described in detail.

The thin film transistor TFT has a gate electrode G
When a positive bias is applied to T, the channel resistance between the source and the drain decreases, and when the bias is set to zero, the channel resistance increases.

Each pixel is provided with a plurality (two) of thin film transistors TFT1 and TFT2 redundantly. Each of the thin film transistors TFT1 and TFT2 has substantially the same size (channel length and channel width are the same), and includes a gate electrode GT, a gate insulating film GI, and an i-type (intrinsic,
intrinsic, not doped with conductivity determining impurities)
It has an i-type semiconductor layer AS made of amorphous silicon (Si), a pair of source electrode SD1, and a drain electrode SD2. It should be understood that the source and the drain are originally determined by the bias polarity between them, and in the circuit of this liquid crystal display device, the polarity is inverted during the operation, so that the source and the drain are interchanged during the operation. However, in the following description, one is fixed and the other is fixed as a drain for convenience.

<< Gate Electrode GT >> The gate electrode GT is configured to protrude vertically from the scanning signal line GL (branched into a T-shape). The gate electrode GT protrudes beyond the respective active areas of the thin film transistors TFT1 and TFT2. Thin film transistor TFT
1. The respective gate electrodes GT of the TFT 2 are integrally formed (as a common gate electrode) and are formed continuously with the scanning signal line GL. In this example, the gate electrode GT is formed of a single-layer second conductive film g2. As the second conductive film g2, for example, an aluminum (Al) film formed by sputtering is used, and an anodic oxide film AOF of Al is provided thereon.

The gate electrode GT is formed to be larger than it (as viewed from below) so as to completely cover the i-type semiconductor layer AS, and is designed so that external light or backlight does not hit the i-type semiconductor layer AS. .

<< Scanning Signal Line GL >> The scanning signal line GL is
It is composed of a conductive film g2. The second conductive film g2 of the scanning signal line GL is formed in the same manufacturing process as the second conductive film g2 of the gate electrode GT, and is integrally formed. An anodic oxide film AOF of Al is also provided on the scanning signal line GL.

<< Insulating Film GI >> The insulating film GI is used as a gate insulating film for applying an electric field to the semiconductor layer AS together with the gate electrode GT in the thin film transistors TFT1 and TFT2. The insulating film GI is formed above the gate electrode GT and the scanning signal line GL. As the insulating film GI, for example, a silicon nitride film formed by plasma CVD is selected, and is formed to a thickness of 1200 to 2700 ° (about 2000 ° in this embodiment). Gate insulating film GI
Are formed so as to surround the entire matrix portion AR, and the peripheral portion is removed so as to expose the external connection terminal DTM. The insulating film GI also contributes to electrical insulation between the scanning signal lines GL and the video signal lines DL.

<< i-type semiconductor layer AS >> i-type semiconductor layer AS
Is formed to be an independent island for each of the thin film transistors TFT1 and TFT2 in this example, and is made of amorphous silicon to a thickness of 200 to 2200 ° (in this example, 2 mm).
(Thickness of about 000 °). The layer d0 is an N ⁺ -type amorphous silicon semiconductor layer doped with phosphorus (P) for ohmic contact, where the i-type semiconductor layer AS is present below and the conductive layer d2 (d3) is present above. Only left.

The i-type semiconductor layer AS is also provided between both intersections (crossover portions) between the scanning signal lines GL and the video signal lines DL. The i-type semiconductor layer AS at the intersection reduces a short circuit between the scanning signal line GL and the video signal line DL at the intersection.

<< Transparent Pixel Electrode ITO1 >> Transparent Pixel Electrode I
TO1 constitutes one of the pixel electrodes of the liquid crystal display section.

The transparent pixel electrode ITO1 is connected to the source electrode SD1 of the thin film transistor TFT1 and the thin film transistor T1.
It is connected to both source electrodes SD1 of FT2. Therefore, even if a defect occurs in one of the thin film transistors TFT1 and TFT2, if the defect causes a side effect, an appropriate portion is cut off by a laser beam or the like, and if not, the other thin film transistor operates normally. You can leave it. The transparent pixel electrode ITO1 is composed of a first conductive film d1.
Is a transparent conductive film (Indium-Tin) formed by sputtering.
-Oxide ITO: Nesa film), 1000-200
0 mm thick (in this embodiment, about 1400 mm thick)
It is formed.

<< Source electrode SD1, Drain electrode SD
2 >> Each of the source electrode SD1 and the drain electrode SD2 is composed of a second conductive film d2 in contact with the N ⁺ type semiconductor layer d0 and a third conductive film d3 formed thereon.

The second conductive film d2 is formed of a chromium (Cr) film formed by sputtering and has a thickness of 500 to 1000 ° (about 600 ° in this embodiment). Since the stress increases when the Cr film is formed thick,
It is formed in a range not exceeding a film thickness of about 0 °. Cr film is N
⁺ Adhesion to the ⁺ type semiconductor layer d0, and the third conductive film d
3 is used for the purpose of preventing Al from diffusing into the N ⁺ type semiconductor layer d0 (so-called barrier layer). As the second conductive film d2, a high melting point metal (Mo, Ti,
Ta, W) film, refractory metal silicide (MoSi ₂ , T
_{iSi 2, TaSi 2, WSi 2} ) film may be used.

The third conductive film d3 is formed to a thickness of 3000 to 5000 ° by sputtering of Al (in this embodiment, 400 μm).
(Approximately 0 °). The Al film has a smaller stress than the Cr film and can be formed to have a large film thickness. The Al film has a source electrode SD1, a drain electrode SD2, and a video signal line DL.
Has the effect of reducing the resistance value of the gate electrode GT and ensuring the overstep due to the gate electrode GT and the i-type semiconductor layer AS (improving the step coverage).

After patterning the second conductive film d2 and the third conductive film d3 with the same mask pattern, using the same mask or using the second conductive film d2 and the third conductive film d3 as masks, an N ⁺ type semiconductor layer is formed. d0 is removed. That is, i
In the N ⁺ type semiconductor layer d0 remaining on the type semiconductor layer AS, portions other than the second conductive film d2 and the third conductive film d3 are removed by self-alignment. At this time, since the N ⁺ type semiconductor layer d0 is etched so as to remove the entire thickness thereof,
The surface of the i-type semiconductor layer AS is also slightly etched, but the extent may be controlled by the etching time.

<< Video Signal Line DL >> The video signal line DL is composed of the second conductive film d2 and the third conductive film d3 in the same layer as the source electrode SD1 and the drain electrode SD2.

<< Protective Film PSV1 >> Thin Film Transistor TF
A protective film PSV1 is provided on T and the transparent pixel electrode ITO1. The protective film PSV1 is mainly formed to protect the thin film transistor TFT from moisture and the like.
Use a material with high transparency and good moisture resistance. The protective film PSV1 is formed of, for example, a silicon oxide film or a silicon nitride film formed by a plasma CVD device, and has a thickness of 1 μm.
It is formed with a film thickness of about.

The protective film PSV1 is formed so as to surround the whole of the matrix part AR, and the peripheral part is provided with an external connection terminal DTM.
Are removed so that the common electrode COM of the upper substrate SUB2 is connected to the lead-out wiring INT for connecting the external connection terminal of the lower substrate SUB1 with the silver paste AGP. Regarding the thickness relationship between the protective film PSV1 and the gate insulating film GI, the former is made thicker in consideration of the protective effect, and the latter is made thinner in the transconductance gm of the transistor. Therefore, the protection film PSV1 having a high protection effect is formed to be larger than the gate insulating film GI so as to protect the peripheral portion as much as possible.

<< Light shielding film BM >> Upper transparent glass substrate SUB
On the second side, external light or backlight light is applied to the i-type semiconductor layer A.
A light shielding film BM is provided so as not to enter S. FIG.
The closed polygonal contour line of the light shielding film BM shown in FIG. 3 indicates an opening on the inside of which the light shielding film BM is not formed. The light-shielding film BM is formed of, for example, an aluminum film or a chromium film having a high light-shielding property. In this embodiment, the chromium film is formed to a thickness of about 1300 ° by sputtering.

Therefore, the thin film transistors TFT1,
The i-type semiconductor layer AS of the TFT 2 is sandwiched between the upper and lower light-shielding films BM and the large gate electrode GT, so that external natural light or backlight does not shine.
The light-shielding film BM is formed in a grid around each pixel (a so-called black matrix), and an effective display area of one pixel is partitioned by the grid. Therefore, the contour of each pixel is made clear by the light shielding film BM, and the contrast is improved. That is, the light-shielding film BM has two functions of light-shielding for the i-type semiconductor layer AS and black matrix.

Since the edge portion (the lower right portion in FIG. 3) of the transparent pixel electrode ITO1 on the root side in the rubbing direction is also shielded from light by the light shielding film BM, even if a domain is generated in the above portion, the domain is not visible. The display characteristics do not deteriorate.

The light-shielding film BM is also formed in the peripheral part in a frame shape, and its pattern is a pattern in which a plurality of openings are provided in a dot shape as shown in FIG.
Are formed continuously with the pattern of the matrix section shown in FIG. The light-shielding film BM in the peripheral portion is extended outside the seal portion SL to prevent leakage light such as reflected light due to a mounting machine such as a personal computer from entering the matrix portion. On the other hand, the light-shielding film BM is about 0.3 to 1.0 more than the edge of the substrate SUB2.
mm, and is formed so as to avoid the cutting area of the substrate SUB2.

<< Color Filter FIL >> The color filter FIL is formed in a stripe shape by repeating red, green and blue at a position facing the pixel. The color filter FIL is formed to be large so as to cover the entirety of the transparent pixel electrode ITO1, and the light shielding film BM is formed so that the transparent pixel electrode I1 overlaps the color filter FIL and the edge of the transparent pixel electrode ITO1.
It is formed inside the periphery of TO1.

The color filter FIL can be formed as follows. First, a dye base such as an acrylic resin is formed on the surface of the upper transparent glass substrate SUB2, and the dye base other than the red filter formation region is removed by photolithography. Thereafter, the dyed substrate is dyed with a red dye and subjected to a fixing treatment to form a red filter R. Next, a green filter G and a blue filter B are sequentially formed by performing a similar process.

<< Protective Film PSV2 >> The protective film PSV2 is provided to prevent the dye of the color filter FIL from leaking into the liquid crystal LC. The protective film PSV2 is formed of, for example, a transparent resin material such as an acrylic resin or an epoxy resin.

<< Common Transparent Pixel Electrode ITO2 >> The common transparent pixel electrode ITO2 is opposed to the transparent pixel electrode ITO1 provided for each pixel on the lower transparent glass substrate SUB1 side, and the optical state of the liquid crystal LC is determined by each pixel electrode ITO1. In response to a potential difference (electric field) between the pixel electrode and the common transparent pixel electrode ITO2. The common transparent pixel electrode ITO2 is configured to apply a common voltage Vcom. In the present embodiment, the common voltage Vcom is the minimum level driving voltage Vdmin and the maximum level driving voltage Vdmin applied to the video signal line DL.
Although it is set to an intermediate DC potential with dmax, if it is desired to reduce the power supply voltage of the integrated circuit used in the video signal driving circuit to about half, an AC voltage may be applied.

<< Overall Configuration of Liquid Crystal Display Module >> FIG.
FIG. 4 is an exploded perspective view of a liquid crystal display module MDL incorporating the liquid crystal display element PNL shown in FIGS. 2 and 3.

SHD is a shield case (also called a metal frame) made of a metal plate, WD is a display window, INS1
To 3 are insulating sheets, PCB1 to 3 are circuit boards (PCB1
Is a drain side circuit board, PCB2 is a gate side circuit board,
PCB3 is an interface circuit board), JN is a joiner for electrically connecting the circuit boards PCB1 to PCB3, T
CP1 and TCP2 are tape carrier packages, PNL
Is a liquid crystal display panel, GC is a rubber cushion, ILS is a light shielding spacer, PRS is a prism sheet, SPS is a diffusion sheet, GLB is a light guide plate, RFS is a reflection sheet, and MCA is a lower case (mold case) formed by integral molding. , LP is a fluorescent tube, LPC is a lamp cable, and GB is a rubber bush that supports the fluorescent tube LP. The respective members are stacked in an up-down arrangement as shown in the figure to assemble the liquid crystal display module MDL.

The module MDL includes a lower case MCA,
It has two kinds of storage and holding members for the shield case SHD. Insulating sheets INS1-3, circuit boards PCB1-3,
The module MDL is formed by combining a metal shield case SHD containing and fixing the liquid crystal display panel PNL and a lower case MCA containing a backlight BL including a fluorescent tube LP, a light guide plate GLB, a prism sheet PRS, and the like. Assembled.

FIG. 5 is a perspective view of a notebook personal computer or a word processor on which the liquid crystal display module MDL is mounted.

Although the present invention has been specifically described based on the embodiments, the present invention is not limited to the above-described embodiments, and it is needless to say that various changes can be made without departing from the gist of the present invention. It is. For example, it goes without saying that the liquid crystal display device of the present invention can be applied to an active matrix type liquid crystal display device and a simple matrix type liquid crystal display device.

[0065]

As described above, according to the present invention,
Since the warpage of the polarizing plate can be reduced, the operation of attaching the polarizing plate is improved, and the mistake of attaching the polarizing plate and the reproducing operation are reduced.

[Brief description of the drawings]

FIG. 1 is a partial cross-sectional view illustrating a structure of a polarizing plate according to an embodiment of the present invention.

2 is a cross-sectional view showing the vicinity of a panel angle and the vicinity of a video signal terminal on both sides, with the pixel portion of the matrix in the center (a cross-sectional view taken along line 2-2 in FIG. 3).

FIG. 3 is a main part plan view showing one pixel of a liquid crystal display element of an active matrix type color liquid crystal display device and its periphery.

FIG. 4 is an exploded perspective view of an active matrix type color liquid crystal display module.

5 is a perspective view of a notebook personal computer or a word processor on which the liquid crystal display module of FIG. 4 is mounted.

FIG. 6 is a partial cross-sectional view showing a structural example of a conventional polarizing plate.

[Explanation of symbols]

POL: polarizing plate, PLL: polarizer layer, SPL1: first support layer, SPL2: second support layer, ADL: adhesive layer, AGL: antiglare layer, POL1, POL2: polarizing plate, PNL: liquid crystal Display panel (liquid crystal display element).

Claims (5)

[Claims] 1. A polarizer comprising: a polarizer layer; and at least one layer provided on both sides of the polarizer layer so as to sandwich the polarizer layer.
A polarizing plate comprising a plurality of support layers, wherein the thickness of one of the support layers is larger than the thickness of the other support layer. 2. A polarizing plate comprising: a polarizer layer; two support layers provided on both sides of the polarizer layer so as to sandwich the polarizer layer; and a pressure-sensitive adhesive layer for attaching the polarizer plate. A polarizing plate, wherein the thickness of one of the support layers is larger than the thickness of the other support layer. 3. The polarizing plate according to claim 1, wherein the thickness of the support layer on the side where the warp of the polarizing plate is concave is larger than the thickness of the other support layer. 4. The thickness of the support layer on the side of the pressure-sensitive adhesive layer is as follows:
3. The polarizing plate according to claim 2, wherein the thickness of the other support layer is larger than the thickness of the other support layer. 5. A liquid crystal display device having a liquid crystal display element, wherein a polarizing plate is attached to at least one of a front surface and a back surface of the liquid crystal display element via an adhesive layer. And a support layer provided on both sides of the polarizer layer so as to sandwich the polarizer layer, and
A liquid crystal display device, wherein the thickness of one of the support layers is larger than the thickness of the other support layer.