JPH1010235A - Device for detecting multi-element radiation and its manufacture - Google Patents
Device for detecting multi-element radiation and its manufactureInfo
- Publication number
- JPH1010235A JPH1010235A JP9083539A JP8353997A JPH1010235A JP H1010235 A JPH1010235 A JP H1010235A JP 9083539 A JP9083539 A JP 9083539A JP 8353997 A JP8353997 A JP 8353997A JP H1010235 A JPH1010235 A JP H1010235A
- Authority
- JP
- Japan
- Prior art keywords
- scintillator
- partition plate
- groove
- length
- dead zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000005192 partition Methods 0.000 claims abstract description 85
- 238000006243 chemical reaction Methods 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000001514 detection method Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 18
- 239000000853 adhesive Substances 0.000 claims description 16
- 230000001070 adhesive effect Effects 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 abstract description 5
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 abstract description 4
- 238000002591 computed tomography Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 238000001513 hot isostatic pressing Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- LFYJSSARVMHQJB-QIXNEVBVSA-N bakuchiol Chemical compound CC(C)=CCC[C@@](C)(C=C)\C=C\C1=CC=C(O)C=C1 LFYJSSARVMHQJB-QIXNEVBVSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Measurement Of Radiation (AREA)
- Apparatus For Radiation Diagnosis (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【産業上の利用分野】本発明は放射線検出器に係り,特
に全身用X線コンピュータ断層撮影装置(以下X線CT
と略記する)に好適なX線検出器に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a radiation detector, and more particularly to a whole-body X-ray computed tomography apparatus (hereinafter referred to as an X-ray CT).
X-ray detector).
【従来技術】従来のX線CT用X線検出器は,例えば,
特公昭60−58429号に記載のように,希ガスの電
離作用を利用した電離箱X線検出器が多用されていた
が,高分解能,小型化,低コスト化をめざして蛍光体を
用いた固体検出器の開発が進められている。このような
固体検出器の例として,特開昭60−263456号,
特開昭59−81575号,特開昭59−141087
号,米国特許4429227号等に記載のものがある。
固体検出器の典型的な構成を,特開昭60−26345
6号に記載の内容により説明する。固体検出器は,入射
X線による発光部分とこの発光を受光検出する光電変換
部分とからなる。図3は,発光部分の構成を示してお
り,シンチレータ素子141を,光反射剤が塗布された
X線吸収率の大きい重金属の薄板からなる仕切板140
を介して,順次接着した多チャンネル型シンチレータ素
子体145が製作される。受光部分は,種々のタイプの
光電変換素子が使用されるが,図3に示すような,多チ
ャンネル型シンチレータ素子体に対応すべく,多チャン
ネル型光電変換素子が多用されている。光電変換素子と
しては,PIN,PNタイプのシリコンフォトダイオー
ドが使用されることが多い。図4は,多チャンネル型光
電変換素子の構成を示す。一枚の半導体基板110の上
に,複数個の光検出素子である光電変換素子116が形
成されており,半導体基板110は絶縁基板109と一
体となっている。固体検出器は,図3に示す多チャンネ
ル型シンチレータ素子体145を,図4に示す多チャン
ネル型光電変換素子に,光学的透明接着剤を用いて各々
のチャンネルが一致するように接着結合し製造される。
このように各々のチャンネルが一致するためには,図3
に示す多チャンネル型シンチレータ素子体145の寸法
精度,とくにシンチレータ素子のピッチ精度及び上記素
子体の幅寸法の精度が重要であり,チャンネルの不一致
は,各々のチャンネルの検出感度のバラツキの原因とな
り,X線CT画像にアーチファクト(偽像)を与える。
また多チャンネル型シンチレータ素子体145の多チャ
ンネル型光電変換素子との接着結合面は,平坦でなけれ
ばならない。上記素子体の蛍光出力面の凹凸,仕板切の
シンチレータ高さ方向での凹凸,及び光電変換素子の受
光面の凹凸は,チャンネル間の光漏洩の原因となり,や
はりX線CT画像にアーチファクトを与える。図3に示
すような多チャンネル型シンチレータ素子体145の製
造は,高精度を要求される複雑な工程を必要とする。図
5は,特開昭59−81575号に記載される多チャン
ネル型シンチレータ素子体145の改良された製造方法
の概要を示す。所定の寸法を有するシンチレータ薄板1
41と仕切板140を,接着剤により交互に所定数だけ
接着一体化し,接着剤の固化後ダイヤモンドカッター,
あるいはマルチワイヤソーにより,多チャンネル型シン
チレータ素子体145を効率良く製作する方法である。
先に記述したように,上記素子体145は高精度が要求
されるため,多数のシンチレータ薄板141と仕切板1
40の接着に関連しては,各々の接着面での接着層の厚
さを均一に精度良く行う必要がある。以上説明した従来
技術例では,シンチレータ141と仕切板140は,同
じ高さを有しており入射X線に対して指向性は小さく,
散乱線入射量の大きいタイプの検出器となっている。図
6,図7に示す従来技術例は,散乱線入射量を低減させ
たタイプの検出器である。図6は,米国特許44292
27号に記載された従来技術例であり,散乱線入射量を
低減させるコリメータ板と同時に隣接チャンネル間の光
漏洩を防止する仕切板を兼ねたタングステンあるいは高
密度物質よりなる薄板150が,シンチレータ151と
一定位置関係を維持している。シンチレータ151は,
光学グリース152を介して基板154上のフォトダイ
オード153の受光面155に対向している。この例で
は,薄板150が複雑な形状を必要とし,薄板150と
受光面155の間の隙間を介しての隣接チャンネル間で
の光漏洩が存在する。図7は,特開昭59−14108
7号に記載された従来技術例であり,シンチレータ材料
として,タングステン酸カドミウム結晶162を使用し
た例であり,X線吸収が大きいことを利用しシンチレー
タ素子の間の仕切板を省略したものであり,シンチレー
タ162の表面には光反射層161が形成され,隣接チ
ャンネルへの光漏洩を防止している。コリメータ部材1
60は,シンチレータ部材の接合部に位置するように治
具を使用しておかれる。シンチレータ素子は,光学カッ
プラを介して基板164上の受光素子163に対向す
る。この例では,コリメータ部分の製造とX線検出素子
部分の製造が独立できる長所があるが,図6に示す例と
同様に,シンチレータは1個づつ必要な精度で加工し必
要に応じてシンチレータ表面の光学的な処理を施す必要
があり,多数の工程が要求されている。□2. Description of the Related Art Conventional X-ray CT X-ray detectors include, for example,
As described in Japanese Patent Publication No. 60-58429, an ionization chamber X-ray detector utilizing the ionizing action of a rare gas has been widely used, but a phosphor has been used for high resolution, miniaturization and cost reduction. Solid state detectors are being developed. As an example of such a solid state detector, JP-A-60-263456,
JP-A-59-81575, JP-A-59-141087
And U.S. Pat. No. 4,429,227.
A typical configuration of a solid state detector is disclosed in Japanese Patent Laid-Open No. 60-26345.
Explanation will be made based on the contents described in No. 6. The solid-state detector includes a light emitting portion by incident X-rays and a photoelectric conversion portion for receiving and detecting the light emission. FIG. 3 shows the structure of the light emitting portion. The scintillator element 141 is formed by dividing the light reflector with a partition plate 140 made of a heavy metal thin plate having a large X-ray absorption rate.
Through this, a multi-channel scintillator element body 145 bonded sequentially is manufactured. Various types of photoelectric conversion elements are used for the light receiving portion, and multi-channel photoelectric conversion elements are frequently used in order to correspond to a multi-channel scintillator element as shown in FIG. As a photoelectric conversion element, a PIN or PN type silicon photodiode is often used. FIG. 4 shows a configuration of a multi-channel photoelectric conversion element. On one semiconductor substrate 110, a plurality of photoelectric conversion elements 116 as photodetectors are formed, and the semiconductor substrate 110 is integrated with an insulating substrate 109. The solid state detector is manufactured by adhesively bonding the multi-channel type scintillator element body 145 shown in FIG. 3 to the multi-channel type photoelectric conversion element shown in FIG. 4 using an optically transparent adhesive so that each channel coincides. Is done.
As shown in FIG.
The dimensional accuracy of the multi-channel scintillator element body 145, particularly the pitch accuracy of the scintillator element and the accuracy of the width dimension of the above-mentioned element body are important, and the inconsistency of the channels causes variation in the detection sensitivity of each channel. An artifact (false image) is given to the X-ray CT image.
The adhesive bonding surface of the multi-channel scintillator element body 145 with the multi-channel photoelectric conversion element must be flat. The unevenness of the fluorescent output surface of the above-mentioned element body, the unevenness in the height direction of the scintillator when the partition is cut, and the unevenness of the light receiving surface of the photoelectric conversion element cause light leakage between channels, which also causes an artifact in the X-ray CT image. give. The production of the multi-channel scintillator element body 145 as shown in FIG. 3 requires a complicated process requiring high precision. FIG. 5 shows an outline of an improved method for manufacturing a multi-channel scintillator element body 145 described in Japanese Patent Application Laid-Open No. 59-81575. Scintillator thin plate 1 having predetermined dimensions
41 and the partition plate 140 are bonded and integrated by a predetermined number alternately with an adhesive, and after the adhesive is solidified, a diamond cutter,
Alternatively, this is a method of efficiently manufacturing a multi-channel type scintillator element body 145 using a multi-wire saw.
As described above, since the element body 145 is required to have high accuracy, a large number of the scintillator thin plates 141 and the partition plate 1 are required.
In connection with the bonding of 40, the thickness of the bonding layer on each bonding surface needs to be uniformly and accurately performed. In the above-described prior art example, the scintillator 141 and the partition plate 140 have the same height, and have low directivity for incident X-rays.
This type of detector has a large amount of scattered radiation incident. The prior art examples shown in FIGS. 6 and 7 are detectors of the type in which the amount of incident scattered radiation is reduced. FIG. 6 shows a U.S. Pat.
No. 27, a thin plate 150 made of tungsten or a high-density material that also serves as a collimator plate for reducing the amount of scattered radiation incident and a partition plate for preventing light leakage between adjacent channels is used as the scintillator 151. And maintain a constant positional relationship. The scintillator 151
It faces the light receiving surface 155 of the photodiode 153 on the substrate 154 via the optical grease 152. In this example, the thin plate 150 requires a complicated shape, and there is light leakage between adjacent channels via a gap between the thin plate 150 and the light receiving surface 155. FIG.
This is a prior art example described in No. 7, in which a cadmium tungstate crystal 162 is used as a scintillator material, and a partition plate between scintillator elements is omitted because of its large X-ray absorption. A light reflection layer 161 is formed on the surface of the scintillator 162 to prevent light from leaking to an adjacent channel. Collimator member 1
The jig 60 is used so as to be located at the joint of the scintillator member. The scintillator element faces the light receiving element 163 on the substrate 164 via the optical coupler. This example has the advantage that the manufacture of the collimator part and the manufacture of the X-ray detection element part are independent. However, as in the example shown in FIG. 6, the scintillators are processed one by one with the required accuracy and the surface of the scintillator is processed as necessary. Optical processing must be performed, and a number of steps are required. □
【発明が解決しようとする課題】上記従来技術は,隣接
するチャンネル間での光漏洩が発生する原因の一つとな
る多チャンネル型シンチレータ素子体の蛍光出力面,及
び多チャンネル型光電変換素子の受光面の凹凸の点につ
いて,X線検出器の製造上の配慮がなされておらず,上
記光漏洩を低減するのに限界があるとの問題があった。
また,上記従来技術は,複雑な製造工程を必要とし高精
度を有する多チャンネル型シンチレータ素子体の製造コ
スト,歩留りに問題があった。本発明の課題は,単純な
製造工程により,高精度で隣接するチャンネル間での光
漏洩を,極めて少なくする安価で高性能なX線CT用検
出器を提供することにある。In the above prior art, the fluorescent output surface of the multi-channel scintillator element, which is one of the causes of light leakage between adjacent channels, and the light reception of the multi-channel photoelectric conversion element. Regarding the surface irregularities, no consideration has been given to the manufacture of the X-ray detector, and there has been a problem that there is a limit in reducing the light leakage.
Further, the above-mentioned prior art requires a complicated manufacturing process and has a problem in manufacturing cost and yield of a multi-channel scintillator element having high accuracy. It is an object of the present invention to provide an inexpensive and high-performance X-ray CT detector that can extremely reduce light leakage between adjacent channels with high accuracy by a simple manufacturing process.
【課題を解決するための手段】上記の課題は,所定の厚
さを有するシンチレータ薄板を多チャンネル型光電変換
素子の受光面に,光学的に透明な接着剤により接着固定
したのち,多チャンネル型光電変換素子上で各チャンネ
ルを分離する不感帯の中心位置に仕切板を挿入する溝
を,シンチレータ表面より多チャンネル型光電変換素子
を形成する半導体基板内部あるいは上記半導体基板又は
薄膜状の光電変換素子を支持あるいは搭載する電気的絶
縁性基板内部にいたるまで形成し,この溝に仕切板を挿
入固定することにより解決される。The object of the present invention is to provide a multi-channel type of scintillator thin plate having a predetermined thickness adhered to the light receiving surface of a multi-channel type photoelectric conversion element with an optically transparent adhesive. A groove for inserting a partition plate at a center position of a dead zone separating each channel on the photoelectric conversion element is provided inside the semiconductor substrate forming the multi-channel type photoelectric conversion element from the surface of the scintillator, or the semiconductor substrate or the thin-film photoelectric conversion element is formed. The problem can be solved by forming the substrate up to the inside of the electrically insulating substrate to be supported or mounted, and inserting and fixing a partition plate into this groove.
【作用】仕切板はシンチレータ部,光電変換素子を形成
する半導体基板内部,あるいは上記半導体基板又は薄膜
状の光電変換素子を支持あるいは搭載する電気的絶縁性
基板内部まで形成された溝の底部まで挿入されるので,
多チャンネル型シンチレータ素子体の蛍光出力面及び多
チャンネル型光電変換素子の受光面の凹凸に影響される
ことなく,隣接チャンネル間の光漏洩を極めて少なくで
きる。The partition plate is inserted up to the bottom of the groove formed up to the scintillator portion, the inside of the semiconductor substrate forming the photoelectric conversion element, or the inside of the electrically insulating substrate supporting or mounting the semiconductor substrate or the thin-film photoelectric conversion element. So that
Light leakage between adjacent channels can be extremely reduced without being affected by the unevenness of the fluorescent light output surface of the multi-channel type scintillator element body and the light receiving surface of the multi-channel type photoelectric conversion element.
【実施例】以下,本発明の第1の実施例を図1により説
明する。各々のシンチレータ102は,光学的に透明な
接着層105を介して多チャンネル型光電変換素子の受
光面に対向している。図1に示した光電変換素子は,P
INタイプのシリコンフォトダイオードを示す。これは
P+層106,I層107,N+層108からなり,電
気絶縁性基板109の上にある。上記受光面は,半導体
基板表面のうち細長い島状にP+層106が形成された
部分に相当する。シンチレータ102のX線入射側10
1の面103及びシンチレータ素子長手方向の2つの側
面,即ちX線入射面103に直交する面のうち面積の小
さい両側面には,光反射層103が形成されている。隣
接するチャンネル間の光漏洩を防止し,かつシンチレー
タ内部で発生した蛍光の光電変換素子への集光効率を向
上させるため最外層が,光学的に透明な薄い電気絶縁層
を有し光反射性を有するモリブデン,タンタル,タング
ステン,鉛あるいはこれら元素を主成分とする合金等か
らなる,厚さ0.1〜0.2mmの仕切板104を挿入
する溝は,隣接する受光面106の間にある不感帯の中
心位置にあり,ダイヤモンドカッター等の手段により形
成され,シンチレータ102,接着層105を通り,I
層107の途中部分まで達している。このような構造体
は,以下に説明する方法により製作できる。図8は,粉
体蛍光体,例えば,ZnS:Ag,Ba2GdSbO4,
Ba2BiInO6,Ba2BiYO6,GdPb2WO6,
La2O2S:Tb,ZnCdS:Ag,LaOBr:D
y,CdS等を,熱間静水圧加圧法等によって製造した
蛍光体魂,あるいは単結晶,例えば,Zn2SiO4,C
aWO4,CdWO4,ZnWO4,CsI:Na,Cs
I:Tl,NaI:Tl,Gd2SiO4:Ce,Bi4
Ge3O12,CaF2:Eu等より切り出して製造した,
寸法L,W,Hを有する蛍光体ブロック200を示す。
W×Hで規定される2つの面203は,最終的にシンチ
レータ素子の長手方向に対応する面となり,2つの面2
03の表面には硫酸バリウムあるいは二酸化チタン等を
含む光反射剤塗布すること,またはアルミニウム蒸着層
等により光反射層が形成されている。寸法Lは,シンチ
レータ素子長さと等しく,寸法Wは,多チャンネル型光
電変換素子のチャンネル方向の幅寸法より,やや大きい
寸法であればよい。寸法Hは,図9に示すような所定の
厚さtを有するシンチレータ薄板102が,適当数得ら
れる寸法であればよい。図9は,図8に示す蛍光体ブロ
ック200から切り出された厚さtを有するシンチレー
タ薄板102を示し,その最大面積を有する面の一方の
面には,面203と同様に光反射層が形成される。この
ようなシンチレータ薄板102の光反射層を有しない最
大面積をもつ面を,多チャンネル型光電変換素子110
の面に光透過性接着剤により接着固定する。図10にこ
のようにして得られる接着完了の状態,図11にその断
面を示す。接着層105の存在は,光検出部と発光部を
空気層を介して対向設置する場合に比較し30〜40%
の出力向上が得られる長所を有する。図10に示すよう
に,多チャンネル型光電変換素子の長さは素子長Lより
長くなっており,隣接する光電変換素子の受光面106
の間にある不感帯の位置が,素子の長方方向の両端側で
シンチレータ薄板にさえぎられることなく,観測できる
ようになっている。図12は,不感帯の中心位置に形成
された溝190を示しており,電気的な雑音の混入を防
止し,光電変換素子を形成している半導体基板の機械強
度を保持するため溝の深さは,I層107の途中部分ま
でとまっており,N+層108には達していない。また
溝190の幅は,不感帯の幅より小さく,仕切板104
の厚さよりわずかだけ,例えば,10〜20ミクロン広
ければ十分であり,シンチレータ102の面積を大きく
するためには,仕切板表面に光反射性を付与する手段は
光反射性塗料を塗布する手段より,むしろ薄いアルミニ
ウム層を蒸着等により形成する手段がより望ましい。こ
のような仕切板104を溝190の底まで挿入する。仕
切板104の高さは,少なくとも図1において光反射層
103と同面となるかわずかだけ凸となるようにする。
仕切板104の長さは,図14に示すようにシンチレー
タ素子102の長さより長く,素子長手方向の両端にお
ける隣接チャンネル間の光漏洩を防止している。挿入さ
れた仕切板104は,素子長手方向の両端において,接
着剤120により多チャンネル型光電変換素子110を
搭載する基板109の面にシンチレータ素子103の側
面全面と共に強固に接着固定される。このようにシンチ
レータ素子は,長さより長い仕切板を用いるメリットを
さらに詳細に述べると,以下のようになる。もし,シン
チレータ素子と同じ長さの仕切板を用いたとすると,図
16に示す通り両者の配列のわずかの誤差によりいずれ
かの端部で仕切板203がシンチレータ素子205の間
に引込んでしまう。即ち,端部付近に仕切板203が介
在しない部分(距離d)ができ,隣接するシンチレータ
素子205間に蛍光302が漏洩し,クロストークとな
る。図16にて,201は入射X線,301はX線コリ
メータを示す。クロストーク量は距離d,シンチレータ
素子205のX線吸収係数,光吸収係数,X線エネルギ
ースペクトル,コリメータ開口t,及びシンチレータ素
子205の形状寸法により決る。図17に距離dとクロ
ストーク量の関係の一例を示す。このようにシンチレー
タ素子の間に光のクロストークが生じ,素子間により,
クロストーク量に差があると,それが原因となって,リ
ング状アーチファクトや,放射状のアーチファクトが発
生する。アーチファクトが発生しない限界クロストーク
量は撮影条件により異なるが,厳しい条件の場合には
0.05%以下に抑える必要がある。図17の例では
0.05%以下にクロストーク量を抑えるためにはズレ
量dは約20μm以下にする必要がある。シンチレータ
素子の特性・形状によっては,ズレ量dに対する制限は
より厳しくなる。図3の従来の方式では,これだけの精
度を歩留り良く確保することは容易ではない。そこで,
図14の実施例のように仕切板の長さ(断層像のスライ
ス厚方向の長さ)を,シンチレータ素子の長さより長く
することにより,寸法誤差及び配列誤差を吸収し,仕切
板端が,シンチレータ端よりも内側に入り込まないよう
にできる。これにより,アーチファクトの原因になるク
ロストークの発生を防止できる。なお,図14の実施例
によれば,シンチレータ素子102と受光面106の対
応の位置精度は溝190を形成する加工機の機械的精度
のみにより決まるので,高性能の多チャンネル検出素子
が,図3に示す多チャンネル型シンチレータ素子体を,
独立に製作することなく製作可能となる。また,図18
に示すような,シンチレータ素子と仕切板との配列治具
121を用いれば,仕切板のスライス厚方向の位置を精
度よく限定することができる。更に別の実施例を,図2
により説明する。仕切板104の材質は,第1の実施例
と同様に,モリブデン,タンタル,タングステン,鉛あ
るいはこれらの元素を主成分とする合金等からなる厚さ
0.1〜0.2mmの表面に光反射性を有するものであ
り溝190の底部まで挿入され,仕切板104は,シン
チレータ素子102の表面より,シンチレータ素子10
2の幅の寸法5倍以上だけ,X線入射方向に凸状となっ
ている。従って,図1の実施例とのちがいは,仕切板1
04にコリメータの役割をさせ散乱X線入射量を低減さ
せた点であり,散乱X線入射量を低減すると同時に,隣
接チャンネル間の光漏洩を極少にできる。この場合,仕
切板のX線入射方向での高さ寸法が大きくなるため,十
分強固に仕切板104を保持する必要がある。この保持
方法の一例を図15に示す。溝131を有する支持体1
30は,基板109と溝のピッチが治具により正確に相
対するように,位置が決定されたのち一体化固定され,
仕切板104は溝131を通り,光電変換素子110の
内部まで形成された溝の底部まで挿入されたのち,溝1
31中に強固に接着固定される。溝131の形成は,図
12中の溝190の形成と同じ加工手段により精度良く
実施されている。以上2つの実施例でのシンチレータ材
料として好適である例として,特公昭60−4856号
に記載されている,高変換効率でかつ残光時間の短い蛍
光体の一つである(Gd1-x-yPrxCey)2O2S:Fが
ある。この蛍光体は,粉体状で容易に合成でき,特開昭
62−52481号に記載されるように,この粉体蛍光
体を熱間静水圧加圧法により成形可能であり,厚さ1〜
1.5mmで十分なX線吸収率と光透過率を有し,上記
の2つの実施例によって高感度で高性能のX線検出器を
製造できる。シンチレータ材料のX線吸収率が十分大き
くない時には,光透過率及びX線吸収率の大きい材料
を,図9に示すようなシンチレータ薄板の光反射性を有
しない最大面積を有する面と接着することにより,一変
形として第1及び第2の実施例を適用することが可能で
ある。第1の実施例の変形例として,以下に説明するも
のがある。図9において,光反射層を有する面203,
103の面に光反射層を形成することなく,本発明の目
的を達成しうる。これは図14において,接着剤120
として黒色の遮光性,言い替えれば非透光性を有する接
着剤を使用することにより,シンチレータ素子長手方向
の両端部における隣接チャンネルへの光漏洩を極少とで
き,X線入射面においては特願昭57−156748の
図3の構造をとることにより,X線入射面における光漏
洩を防止できるからである。つぎに仕切板104を挿入
する溝の深さが,光電変換素子のP層の深さより深く,
光電変換素子を形成する光導体基板の厚さの1/2以下
とする場合について説明したが,この溝の深さが,基板
109の内部まで達している第3の実施例を図13に示
す。この場合多,チャンネル型光電変換素子は,不感帯
位置において1素子毎に溝により分断されることになる
ので,光電変換素子を形成している半導体基板と基板1
09は,強固に連絡するよう接着させていることが要求
される。これに対して,電気絶縁性基板109上に直接
薄膜状に多チャンネル型光電変換素子を形成すれば,上
記要求はほとんど不要となる。非晶質シリコンで薄膜状
に光電変換素子を形成する方法は,よく知られている。
この第3の実施例においても,第1及び第2の実施例の
及びそれらの変形例が適用できるのは言うまでもない。
以上の第1,第2,第3の実施例とそれらの変形例につ
いて説明したが,これらいずれの方法によっても,単純
な製造工程により隣接チャンネル間の光漏洩を極めて少
なくできる。以上の実施例の説明で,信号の取り出し経
路手段については多数の従来例によりよく知られている
ので,省略した。また多素子光電変換素子については,
PINタイプのシリコンフォトダイオードに限定して説
明したが種々のタイプの光電変換素子の場合についても
適用可能なことは言うまでもない。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described below with reference to FIG. Each scintillator 102 faces the light receiving surface of the multi-channel type photoelectric conversion element via an optically transparent adhesive layer 105. The photoelectric conversion element shown in FIG.
1 shows an IN type silicon photodiode. It comprises a P + layer 106, an I layer 107 and an N + layer 108 and is on an electrically insulating substrate 109. The light receiving surface corresponds to a portion of the semiconductor substrate surface where the P + layer 106 is formed in an elongated island shape. X-ray incident side 10 of scintillator 102
The light reflecting layer 103 is formed on the surface 103 and two side surfaces in the longitudinal direction of the scintillator element, that is, on both side surfaces having a small area among the surfaces orthogonal to the X-ray incident surface 103. The outermost layer has an optically transparent thin electrically insulating layer to prevent light leakage between adjacent channels and to improve the light collection efficiency of the fluorescent light generated inside the scintillator to the photoelectric conversion element. A groove for inserting a partition plate 104 having a thickness of 0.1 to 0.2 mm, which is made of molybdenum, tantalum, tungsten, lead or an alloy containing these elements as a main component, is located between adjacent light receiving surfaces 106. It is located at the center of the dead zone, is formed by means such as a diamond cutter, passes through the scintillator 102, the adhesive layer 105, and
It reaches a part of the layer 107. Such a structure can be manufactured by the method described below. FIG. 8 shows a powder phosphor, for example, ZnS: Ag, Ba 2 GdSbO 4 ,
Ba 2 BiInO 6 , Ba 2 BiYO 6 , GdPb 2 WO 6 ,
La 2 O 2 S: Tb, ZnCdS: Ag, LaOBr: D
y, CdS, etc., a phosphor sphere manufactured by hot isostatic pressing or the like, or a single crystal such as Zn 2 SiO 4 , C
aWO 4, CdWO 4, ZnWO 4 , CsI: Na, Cs
I: Tl, NaI: Tl, Gd 2 SiO 4 : Ce, Bi 4
Ge 3 O 12 , CaF 2 : manufactured by cutting out from Eu or the like,
5 shows a phosphor block 200 having dimensions L, W, H.
The two surfaces 203 defined by W × H finally become surfaces corresponding to the longitudinal direction of the scintillator element.
A light reflecting layer containing barium sulfate, titanium dioxide, or the like is applied to the surface of No. 03, or an aluminum vapor deposition layer or the like is formed. The dimension L may be equal to the length of the scintillator element, and the dimension W may be slightly larger than the width in the channel direction of the multi-channel photoelectric conversion element. The dimension H may be a dimension such that an appropriate number of scintillator thin plates 102 having a predetermined thickness t as shown in FIG. 9 can be obtained. FIG. 9 shows a scintillator thin plate 102 having a thickness t cut out from the phosphor block 200 shown in FIG. 8, and a light reflecting layer is formed on one of the surfaces having the maximum area in the same manner as the surface 203. Is done. The surface of the scintillator thin plate 102 having the largest area without the light reflection layer is connected to the multi-channel photoelectric conversion element 110.
Is fixed to the surface with a light-transmitting adhesive. FIG. 10 shows the completed bonding state obtained in this way, and FIG. 11 shows its cross section. The presence of the adhesive layer 105 is 30 to 40% as compared with the case where the light detection unit and the light emitting unit are opposed to each other via an air layer.
The advantage is that the output can be improved. As shown in FIG. 10, the length of the multi-channel type photoelectric conversion element is longer than the element length L, and the light receiving surface 106 of the adjacent photoelectric conversion element.
The position of the dead zone between them can be observed at both ends in the longitudinal direction of the element without being interrupted by the scintillator thin plate. FIG. 12 shows a groove 190 formed at the center position of the dead zone. The depth of the groove 190 is set to prevent mixing of electric noise and maintain mechanical strength of the semiconductor substrate forming the photoelectric conversion element. Are stopped in the middle of the I layer 107 and do not reach the N + layer 108. The width of the groove 190 is smaller than the width of the dead zone, and
It is sufficient that the width is slightly larger than the thickness of, for example, 10 to 20 microns, and in order to increase the area of the scintillator 102, the means for imparting light reflectivity to the surface of the partition plate is more than the means for applying light-reflective paint. Rather, it is more desirable to form a thin aluminum layer by vapor deposition or the like. Such a partition plate 104 is inserted to the bottom of the groove 190. The height of the partition plate 104 is at least the same as that of the light reflection layer 103 in FIG. 1 or slightly convex.
The length of the partition plate 104 is longer than the length of the scintillator element 102, as shown in FIG. 14, to prevent light leakage between adjacent channels at both ends in the element longitudinal direction. The inserted partition plate 104 is firmly adhered and fixed to the surface of the substrate 109 on which the multi-channel photoelectric conversion element 110 is mounted together with the entire side surface of the scintillator element 103 with an adhesive 120 at both ends in the element longitudinal direction. The advantages of using a partition plate longer than the length of the scintillator element as described above will be described in further detail below. If a partition plate having the same length as the scintillator element is used, as shown in FIG. 16, the partition plate 203 is drawn into the scintillator element 205 at one end due to a slight error in their arrangement. That is, a portion (distance d) where the partition plate 203 is not interposed is formed near the end, and the fluorescence 302 leaks between the adjacent scintillator elements 205, resulting in crosstalk. In FIG. 16, 201 indicates an incident X-ray, and 301 indicates an X-ray collimator. The amount of crosstalk is determined by the distance d, the X-ray absorption coefficient and light absorption coefficient of the scintillator element 205, the X-ray energy spectrum, the collimator aperture t, and the shape and size of the scintillator element 205. FIG. 17 shows an example of the relationship between the distance d and the amount of crosstalk. In this way, light crosstalk occurs between the scintillator elements, and between the elements,
If there is a difference in the amount of crosstalk, this causes ring-shaped artifacts and radial artifacts. The limit crosstalk amount at which artifacts do not occur varies depending on the shooting conditions, but must be suppressed to 0.05% or less under severe conditions. In the example of FIG. 17, in order to suppress the crosstalk amount to 0.05% or less, the deviation amount d needs to be about 20 μm or less. Depending on the characteristics and shape of the scintillator element, the restriction on the deviation d becomes more severe. With the conventional method shown in FIG. 3, it is not easy to secure such accuracy with a good yield. Therefore,
By making the length of the partition plate (the length in the slice thickness direction of the tomographic image) longer than the length of the scintillator element as in the embodiment of FIG. 14, dimensional errors and arrangement errors are absorbed, and the end of the partition plate becomes It can be prevented from entering inside the scintillator end. As a result, it is possible to prevent the occurrence of crosstalk which causes an artifact. According to the embodiment of FIG. 14, since the corresponding positional accuracy of the scintillator element 102 and the light receiving surface 106 is determined only by the mechanical accuracy of the processing machine for forming the groove 190, a high-performance multi-channel detecting element is required. The multi-channel scintillator element body shown in FIG.
It can be manufactured without being manufactured independently. FIG.
By using the arrangement jig 121 of the scintillator element and the partition plate as shown in (1), the position of the partition plate in the slice thickness direction can be accurately limited. Another embodiment is shown in FIG.
This will be described below. Similar to the first embodiment, the material of the partition plate 104 is such that light is reflected on a surface having a thickness of 0.1 to 0.2 mm made of molybdenum, tantalum, tungsten, lead, or an alloy containing these elements as a main component. The partition plate 104 is inserted from the surface of the scintillator element 102 to the bottom of the groove 190,
The projection is convex in the X-ray incident direction by at least five times the dimension of the width 2. Therefore, the difference from the embodiment of FIG.
This is a point that the amount of scattered X-rays is reduced by making the collimator 04 function as a collimator. The amount of scattered X-rays can be reduced and light leakage between adjacent channels can be minimized. In this case, since the height of the partition plate in the X-ray incident direction becomes large, it is necessary to hold the partition plate 104 sufficiently firmly. FIG. 15 shows an example of this holding method. Support 1 having groove 131
30 is integrated and fixed after the position is determined so that the pitch between the substrate 109 and the groove is accurately opposed by the jig.
After the partition plate 104 is inserted to the bottom of the groove formed up to the inside of the photoelectric conversion element 110 through the groove 131, the groove 1
31 are firmly adhered and fixed. The formation of the groove 131 is accurately performed by the same processing means as the formation of the groove 190 in FIG. As an example suitable as a scintillator material in the above two embodiments, it is one of the phosphors having a high conversion efficiency and a short afterglow time described in Japanese Patent Publication No. 60-4856 (Gd 1-xy). Pr x Ce y ) 2 O 2 S: F. This phosphor can be easily synthesized in powder form, and as described in JP-A-62-52481, this powder phosphor can be molded by a hot isostatic pressing method and has a thickness of 1 to 5.
1.5 mm has sufficient X-ray absorption and light transmittance, and a high-sensitivity and high-performance X-ray detector can be manufactured by the above two embodiments. When the X-ray absorptance of the scintillator material is not sufficiently large, a material having a high light transmittance and a high X-ray absorptivity is bonded to the surface of the scintillator thin plate having the maximum area having no light reflectivity as shown in FIG. Thus, the first and second embodiments can be applied as a modification. As a modification of the first embodiment, there is the following. In FIG. 9, a surface 203 having a light reflection layer,
The object of the present invention can be achieved without forming a light reflecting layer on the surface of the substrate 103. This is shown in FIG.
By using a black light-blocking adhesive, in other words, a non-light-transmitting adhesive, light leakage to adjacent channels at both ends in the longitudinal direction of the scintillator element can be minimized. This is because light leakage on the X-ray incidence surface can be prevented by adopting the structure of FIG. 3 of No. 57-156748. Next, the depth of the groove into which the partition plate 104 is inserted is deeper than the depth of the P layer of the photoelectric conversion element.
Although the case where the thickness of the light guide substrate on which the photoelectric conversion element is formed is set to 1/2 or less has been described, a third embodiment in which the depth of the groove reaches the inside of the substrate 109 is shown in FIG. . In this case, since the multi-channel type photoelectric conversion element is divided by the groove for each element at the dead zone position, the semiconductor substrate forming the photoelectric conversion element and the substrate 1 are separated.
09 is required to be adhered so as to make firm contact. On the other hand, if the multi-channel type photoelectric conversion element is formed in a thin film directly on the electrically insulating substrate 109, the above requirement becomes almost unnecessary. A method of forming a photoelectric conversion element in a thin film from amorphous silicon is well known.
It goes without saying that the third embodiment can be applied to the first and second embodiments and their modifications.
Although the first, second, and third embodiments and their modifications have been described, light leakage between adjacent channels can be extremely reduced by a simple manufacturing process by any of these methods. In the above description of the embodiment, the signal extraction path means are omitted because they are well known in many conventional examples. For multi-element photoelectric conversion elements,
Although the description is limited to the PIN type silicon photodiode, it is needless to say that the present invention is applicable to various types of photoelectric conversion elements.
【発明の効果】以上説明したように本発明によれば,隣
接チャンネル間の光漏洩を極めて少なくでき,その製造
工程は,単純であり加工機の機械的精度のみによって多
チャンネル検出素子の性能が決まり,高感度の高性能な
多チャンネル検出器を低コストで製造できる。As described above, according to the present invention, light leakage between adjacent channels can be extremely reduced, the manufacturing process is simple, and the performance of the multi-channel detecting element is improved only by the mechanical accuracy of the processing machine. As a result, a high-sensitivity, high-performance multi-channel detector can be manufactured at low cost.
【図1】本発明の第1の実施例の素子長手方向中心位置
での断面図。FIG. 1 is a sectional view of a first embodiment of the present invention at a central position in an element longitudinal direction.
【図2】本発明の第2の実施例の素子長方向中心位置で
の断面図。FIG. 2 is a cross-sectional view at a central position in a device length direction according to a second embodiment of the present invention.
【図3】多チャンネル型シンチレータ素子体の従来例を
示す斜視図。FIG. 3 is a perspective view showing a conventional example of a multi-channel scintillator element body.
【図4】多チャンネル型光電変換素子を示す斜視図。FIG. 4 is a perspective view showing a multi-channel photoelectric conversion element.
【図5】多チャンネルシンチレータ素子体の製造方法の
従来例を示す斜視図。FIG. 5 is a perspective view showing a conventional example of a method for manufacturing a multi-channel scintillator element body.
【図6】コリメータを有する従来例の素子長手方向中心
位置での断面図。FIG. 6 is a cross-sectional view of a conventional example having a collimator at a central position in an element longitudinal direction.
【図7】コリメータを有する従来例の素子長手方向中心
位置での断面図。FIG. 7 is a cross-sectional view of a conventional example having a collimator at a center position in an element longitudinal direction.
【図8】本発明の実施例における蛍光体ブロックを示す
図。FIG. 8 is a view showing a phosphor block according to the embodiment of the present invention.
【図9】本発明の実施例におけるシンチレータ薄板を示
す図。FIG. 9 is a view showing a scintillator thin plate according to the embodiment of the present invention.
【図10】本発明の実施例における,シンチレータ薄板
を多チャンネル型光電変換素子の面に光透過性接着剤に
より接着固定した状態を示す図。FIG. 10 is a diagram showing a state in which a scintillator thin plate is bonded and fixed to a surface of a multi-channel type photoelectric conversion element with a light-transmitting adhesive in an embodiment of the present invention.
【図11】本発明の実施例における,シンチレータ薄板
を多チャンネル型光電変換素子の面に光透過性接着剤に
より接着固定した状態を表わす素子長手方向に垂直な方
向での断面図。FIG. 11 is a cross-sectional view in a direction perpendicular to the device longitudinal direction, showing a state in which a scintillator thin plate is adhered and fixed to a surface of a multi-channel type photoelectric conversion device with a light-transmitting adhesive in an embodiment of the present invention.
【図12】本発明の実施例において,不感帯の中心位置
に形成された溝を表わす素子長手方向に垂直な方向での
断面図。FIG. 12 is a cross-sectional view in a direction perpendicular to the longitudinal direction of the element, showing a groove formed at the center position of a dead zone in the embodiment of the present invention.
【図13】本発明の第3の実施例において,溝の深さが
基板の内部まで達している状態を表わす素子長手方向に
垂直な方向での断面図。FIG. 13 is a cross-sectional view in a direction perpendicular to the element longitudinal direction showing a state where the depth of a groove reaches the inside of a substrate in a third embodiment of the present invention.
【図14】本発明の実施例において,素子長手方向の両
端における隣接チャンネル間の光漏洩防止を説明するた
めの,素子長手方向に平行な方向での断面図。FIG. 14 is a cross-sectional view in a direction parallel to the device longitudinal direction, for describing prevention of light leakage between adjacent channels at both ends in the device longitudinal direction in the embodiment of the present invention.
【図15】本発明の実施例において,散乱X線入射量を
低減すると同時に隣接チャンネル間の光漏洩を極少にす
る仕切板を説明するための,素子長手方向に平行な方向
での断面図。FIG. 15 is a cross-sectional view in a direction parallel to the longitudinal direction of the element for explaining a partition plate that reduces the amount of scattered X-rays and minimizes light leakage between adjacent channels in the embodiment of the present invention.
【図16】シンチレータ素子と同じ長さの仕切板を用い
たときに,両者の配列のわずかの誤差により端部で仕切
板がシンチレータ素子の間に引込んでしまうことを説明
するための,素子長手方向に平行な方向での断面図。FIG. 16 is a view for explaining a case where a partition plate having the same length as a scintillator element is used. Sectional view in a direction parallel to the direction.
【図17】端部付近に仕切板が介在しない部分(距離
d)とクロストーク量の関係の一例を示す図。FIG. 17 is a diagram illustrating an example of a relationship between a portion (distance d) where a partition plate does not intervene near an end portion and a crosstalk amount.
【図18】本発明の実施例のシンチレータ素子と仕切板
とを配列する配列治具を示す図。FIG. 18 is a view showing an arrangement jig for arranging a scintillator element and a partition plate according to the embodiment of the present invention.
101…X線入射側,102…シンチレータ,103…
光反射層,104…仕切板,105…接着層,106…
受光面,107…I層,108…N+層,109…絶縁
性基板,110…光電変換素子,116…光電変換素
子,120…接着剤,121…配列治具,130…支持
体,131…溝,141…シンチレータ素子141,1
40…仕切板140,145…多チャンネル型シンチレ
ータ素子体,150…薄板,151…シンチレータ,1
52…光学グリース,153…フォトダイオード,15
4…基板,155…受光面,160…コリメータ部材,
161…光反射層,162…シンチレータ,163…受
光素子,164…基板,190…仕切板挿入溝,200
…蛍光体ブロック,201…入射X線,203…仕切
板,205…シンチレータ素子,301…X線コリメー
タ,302…蛍光。101: X-ray incident side, 102: Scintillator, 103 ...
Light reflecting layer, 104: partition plate, 105: adhesive layer, 106 ...
Light receiving surface, 107: I layer, 108: N + layer, 109: insulating substrate, 110: photoelectric conversion element, 116: photoelectric conversion element, 120: adhesive, 121: arrangement jig, 130: support, 131: groove , 141... Scintillator elements 141, 1
40: partition plates 140, 145: multi-channel scintillator element body, 150: thin plate, 151: scintillator, 1
52: Optical grease, 153: Photodiode, 15
4, a substrate, 155, a light receiving surface, 160, a collimator member,
161, a light reflecting layer, 162, a scintillator, 163, a light receiving element, 164, a substrate, 190, a groove for inserting a partition plate, 200
... Fluorescent substance block 201 201 incident X-ray 203 partition plate 205 scintillator element 301 X-ray collimator 302 302 fluorescence.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 川口 文男 東京都国分寺市東恋ケ窪1丁目280番地株 式会社日立製作所中央研究所内 (72)発明者 高橋 哲彦 東京都国分寺市東恋ケ窪1丁目280番地株 式会社日立製作所中央研究所内 (72)発明者 早川 孝之 千葉県柏市十余二2−1株式会社日立メデ ィコ技術研究所内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Fumio Kawaguchi 1-280, Higashi-Koikekubo, Kokubunji-shi, Tokyo Inside the Central Research Laboratory of Hitachi, Ltd. (72) Tetsuhiko Takahashi 1-280, Higashi-Koikekubo, Kokubunji-shi, Tokyo Hitachi Central Research Laboratories (72) Inventor Takayuki Hayakawa 2-1 Juyo Kashiwa-shi, Chiba Pref.
Claims (22)
タ素子と前記蛍光を検出する光電変換素子とからなる検
出素子の複数が第1の方向に配列され,前記シンチレー
タ素子の間に仕切板が配置される多素子放射線検出器に
おいて,前記光電変換素子が不感帯を隔て形成される基
板は,前記仕切板が挿入される溝を前記不感帯の領域に
有し,前記仕切板の長さが,前記シンンチレータ素子の
前記第1の方向と直交する第2の方向の長さより大であ
り,前記仕切板の先端が前記溝の内部まで挿入され,前
記シンンチレータ素子の前記第2の方向での外部に前記
仕切板の両端部を露出させることを特徴とする多素子放
射線検出器。1. A plurality of detecting elements each comprising a scintillator element which emits fluorescence upon incidence of radiation and a photoelectric conversion element which detects the fluorescent light are arranged in a first direction, and a partition plate is arranged between the scintillator elements. In the multi-element radiation detector, the substrate on which the photoelectric conversion elements are formed separated by a dead zone has a groove in which the partition plate is inserted in a region of the dead zone, and the length of the partition plate is equal to the length of the scintillator. The length of the element is larger than the length in a second direction orthogonal to the first direction, and the tip of the partition plate is inserted into the inside of the groove, and the partition is provided outside the scintillator element in the second direction. A multi-element radiation detector characterized by exposing both ends of a plate.
タ素子と前記蛍光を検出するPINフォトダイオードと
からなる検出素子の複数が配列され,前記シンチレータ
素子の間に仕切板が配置される多素子放射線検出器にお
いて,前記PINフォトダイオードが不感帯を隔て形成
される基板は,前記仕切板が挿入される溝を前記不感帯
の領域に有し,前記溝の深さが前記基板の厚さの1/2
以下であり,前記仕切板が前記溝の内部まで挿入される
ことを特徴とする多素子放射線検出器。2. A multi-element radiation in which a plurality of detection elements each including a scintillator element that emits fluorescence upon incidence of radiation and a PIN photodiode that detects the fluorescence are arranged, and a partition plate is arranged between the scintillator elements. In the detector, the substrate on which the PIN photodiode is formed separated by a dead zone has a groove in which the partition plate is inserted in a region of the dead zone, and the depth of the groove is の of the thickness of the substrate.
A multi-element radiation detector, wherein the partition plate is inserted into the groove.
タ素子と前記蛍光を検出するPINフォトダイオードと
からなる検出素子の複数が第1の方向に配列され,前記
シンチレータ素子の間に仕切板が配置される多素子放射
線検出器において,前記PINフォトダイオードが不感
帯を隔て形成される基板は,前記仕切板が挿入される溝
を前記不感帯の領域に有し,前記溝の深さが前記基板の
厚さの1/2以下であり,前記仕切板の長さが,前記シ
ンンチレータ素子の前記第1の方向と直交する第2の方
向の長さより大であり,前記仕切板が前記溝の内部まで
挿入され,前記シンンチレータ素子の前記第2の方向で
の外部に前記仕切板の両端部を露出させることを特徴と
する多素子放射線検出器。3. A plurality of detecting elements, each of which includes a scintillator element that emits fluorescent light upon incidence of radiation and a PIN photodiode that detects the fluorescent light, are arranged in a first direction, and a partition plate is arranged between the scintillator elements. In the multi-element radiation detector described above, the substrate on which the PIN photodiode is formed with a dead zone has a groove in which the partition plate is inserted in a region of the dead zone, and the depth of the groove is equal to the thickness of the substrate. And the length of the partition plate is greater than the length of the scintillator element in a second direction orthogonal to the first direction, and the partition plate is inserted into the groove. A multi-element radiation detector, wherein both ends of the partition plate are exposed to the outside of the scintillator element in the second direction.
タ素子と前記蛍光を検出する光電変換素子とからなる検
出素子の複数が第1の方向に配列され,前記シンチレー
タ素子の間に仕切板が配置される多素子放射線検出器に
おいて,前記シンチレータ素子の前記放射線が入射する
面に光反射層を有し,前記光電変換素子が不感帯を隔て
形成される基板は,前記仕切板が挿入される溝を前記不
感帯の領域に有し,前記仕切板の長さが,前記シンンチ
レータ素子の前記第1の方向と直交する第2の方向の長
さより大であり,前記仕切板の先端が前記溝の内部まで
挿入され,前記シンンチレータ素子の前記第2の方向で
の外部に前記仕切板の両端部を露出させ,前記仕切板
は,前記第1の方向における前記シンチレータ素子の幅
の5倍以上だけ,前記光反射層の面より凸であることを
特徴とする多素子放射線検出器。4. A plurality of detecting elements, each of which includes a scintillator element that emits fluorescence upon incidence of radiation and a photoelectric conversion element that detects the fluorescent light, are arranged in a first direction, and a partition plate is arranged between the scintillator elements. In the multi-element radiation detector, the scintillator element has a light reflection layer on a surface on which the radiation is incident, and the substrate on which the photoelectric conversion element is formed separated by a dead zone has a groove in which the partition plate is inserted. The length of the partition plate is greater than the length of the scintillator element in a second direction orthogonal to the first direction, and the tip of the partition plate extends to the inside of the groove. The partition plate is inserted to expose both ends of the partition plate to the outside in the second direction of the scintillator element, and the partition plate is moved forward by at least five times the width of the scintillator element in the first direction. Multi-element radiation detector, which is a convex than the planes of the light reflection layer.
タ素子と前記蛍光を検出するPINフォトダイオードと
からなる検出素子の複数が配列され,前記シンチレータ
素子の間に仕切板が配置される多素子放射線検出器にお
いて,前記シンチレータ素子の前記放射線が入射する面
に光反射層を有し,前記PINフォトダイオードが不感
帯を隔て形成される基板は,前記仕切板が挿入される溝
を前記不感帯の領域に有し,前記溝の深さが前記基板の
厚さの1/2以下であり,前記仕切板が前記溝の内部ま
で挿入され,前記仕切板は,前記第1の方向における前
記シンチレータ素子の幅の5倍以上だけ,前記光反射層
の面より凸であることを特徴とする多素子放射線検出
器。5. A multi-element radiation in which a plurality of detection elements each comprising a scintillator element which emits fluorescence upon incidence of radiation and a PIN photodiode for detecting said fluorescence are arranged, and a partition plate is arranged between said scintillator elements. In the detector, the scintillator element has a light reflecting layer on a surface on which the radiation is incident, and the substrate on which the PIN photodiode is formed separated by a dead zone is provided with a groove in which the partition plate is inserted in an area of the dead zone. Wherein the depth of the groove is less than or equal to half the thickness of the substrate, the partition plate is inserted to the inside of the groove, and the partition plate has a width of the scintillator element in the first direction. A multi-element radiation detector which is convex from the surface of the light reflecting layer by 5 times or more of the above.
タ素子と前記蛍光を検出するPINフォトダイオードと
からなる検出素子の複数が第1の方向に配列され,前記
シンチレータ素子の間に仕切板が配置される多素子放射
線検出器において,前記シンチレータ素子の前記放射線
が入射する面に光反射層を有し,前記PINフォトダイ
オードが不感帯を隔て形成される基板は,前記仕切板が
挿入される溝を前記不感帯の領域に有し,前記溝の深さ
が前記基板の厚さの1/2以下であり,前記仕切板の長
さが,前記シンンチレータ素子の前記第1の方向と直交
する第2の方向の長さより大であり,前記仕切板が前記
溝の内部まで挿入され,前記シンンチレータ素子の前記
第2の方向での外部に前記仕切板の両端部を露出させ,
前記仕切板は,前記第1の方向における前記シンチレー
タ素子の幅の5倍以上だけ,前記光反射層の面より凸で
あることを特徴とする多素子放射線検出器。6. A plurality of detecting elements, each of which includes a scintillator element that emits fluorescence upon incidence of radiation and a PIN photodiode that detects the fluorescent light, are arranged in a first direction, and a partition plate is arranged between the scintillator elements. In the multi-element radiation detector described above, the scintillator element has a light reflection layer on a surface on which the radiation is incident, and the substrate on which the PIN photodiode is formed separated by a dead zone has a groove in which the partition plate is inserted. A second groove perpendicular to the first direction of the scintillator element, wherein the depth of the groove is not more than の of the thickness of the substrate, and the length of the partition plate is perpendicular to the first direction of the scintillator element. The length of the partition plate is inserted to the inside of the groove, and both ends of the partition plate are exposed to the outside of the scintillator element in the second direction.
The multi-element radiation detector according to claim 1, wherein the partition plate is convex from a surface of the light reflection layer by at least five times a width of the scintillator element in the first direction.
いて,前記光反射層がアルミニウム蒸着層からなること
を特徴とする多素子放射線検出器。7. A multi-element radiation detector according to claim 4, wherein said light reflection layer is made of an aluminum vapor-deposited layer.
いて,前記光反射層がアルミニウム蒸着層からなること
を特徴とする多素子放射線検出器。8. The multi-element radiation detector according to claim 5, wherein said light reflecting layer is made of an aluminum vapor-deposited layer.
いて,前記光反射層がアルミニウム蒸着層からなること
を特徴とする多素子放射線検出器。9. A multi-element radiation detector according to claim 6, wherein said light reflection layer is made of an aluminum vapor-deposited layer.
の方向に配列して形成される基板に,一面に光反射層が
形成されたシンチレータ薄板の前記光反射層が形成され
た面と反対の面を,光透過性を有する接着剤で接着する
第1の工程と,前記第1の方向と直交する第2の方向で
の前記シンチレータ薄板の長さより大なる長さを有し,
前記基板の内部まで達する溝を前記不感帯の領域に形成
し,前記溝により前記シンチレータ薄板を分離する第2
の工程と,前記第2の方向での前記シンチレータ薄板の
長さより大なる長さを有する仕切板を,前記シンチレー
タ薄板の前記第2の方向での外部に前記仕切板の両端部
を露出させて,前記溝の内部に挿入する第3の工程とを
有することを特徴とする多素子放射線検出器の製造方
法。10. A method according to claim 1, wherein the plurality of photoelectric conversion elements are separated by a dead zone.
The surface opposite to the surface on which the light reflection layer is formed of the scintillator thin plate having the light reflection layer formed on one surface is bonded to a substrate formed in a direction arranged in the direction by a light-transmitting adhesive. (1) having a length greater than a length of the scintillator thin plate in a second direction orthogonal to the first direction;
Forming a groove reaching the inside of the substrate in the area of the dead zone, and separating the scintillator thin plate by the groove.
And a step of exposing both ends of the partition plate to the outside of the scintillator thin plate in the second direction by exposing the partition plate having a length greater than the length of the scintillator thin plate in the second direction. And a third step of inserting the multi-element radiation detector into the inside of the groove.
された基板であり,前記光電変換素子が配列して形成さ
れる第1の方向での前記基板の長さが,一面に光反射層
が形成されたシンチレータ薄板の前記第1の方向での長
さよりも小であり,前記第1の方向と直交する第2の方
向での前記不感帯の長さが,前記第2の方向での前記シ
ンチレータ薄板の長さよりも大となるように形成された
前記基板に,前記不感帯の一部分が,前記第2の方向で
の前記シンチレータ薄板の少なくとも一方の端部の外部
で露出するように,前記シンチレータ薄板の前記光反射
層が形成された面と反対の面を,光透過性を有する接着
剤で接着する第1の工程と,前記第2の方向での少なく
とも一方の端部の外部で露出する前記不感帯を検出する
第2の工程と,前記第2の方向での前記シンチレータ薄
板の長さより大なる長さを有し,前記基板の内部まで達
する溝を前記不感帯の領域に形成し,前記溝により前記
シンチレータ薄板を分離する第3の工程と,前記第2の
方向での前記シンチレータ薄板の長さより大なる長さを
有する仕切板を,前記シンチレータ薄板の前記第2の方
向での外部に前記仕切板の両端部を露出させて,前記溝
の内部に挿入する第4の工程とを有することを特徴とす
る多素子放射線検出器の製造方法。11. A substrate on which a plurality of photoelectric conversion elements are formed separated by a dead zone, wherein the length of the substrate in a first direction formed by arranging the photoelectric conversion elements is equal to a light reflecting layer on one surface. The length of the dead zone in a second direction orthogonal to the first direction is smaller than the length of the scintillator thin plate on which the is formed in the first direction, and the length of the dead zone in the second direction is orthogonal to the first direction. The scintillator is formed such that a portion of the dead zone is exposed outside at least one end of the scintillator thin plate in the second direction on the substrate formed to be larger than the length of the scintillator thin plate. A first step of bonding a surface of the thin plate opposite to the surface on which the light reflection layer is formed with a light-transmitting adhesive, and exposing at least one end in the second direction to the outside. A second step of detecting the dead zone; A third step of forming a groove in the dead zone region having a length greater than a length of the scintillator thin plate in a second direction and reaching the inside of the substrate, and separating the scintillator thin plate by the groove; A partition having a length greater than a length of the scintillator thin plate in the second direction, exposing both ends of the partition to the outside in the second direction of the scintillator thin plate, And a fourth step of inserting the multi-element radiation detector into a multi-element radiation detector.
の製造方法において,前記第1の工程は,前記第2の方
向での前記シンチレータ薄板の両端部の外部で,前記不
感帯が露出するように,前記シンチレータ薄板を前記接
着剤で接着する工程であり,前記第2の工程は,前記第
2の方向での両端部の外部で露出する前記不感帯を検出
する工程であり,前記第3の工程は,前記第2の工程で
検出された前記不感帯の中心部に前記溝を形成する工程
であることを特徴とする多素子放射線検出器の製造方
法。12. A method for manufacturing a multi-element radiation detector according to claim 11, wherein said first step comprises exposing said dead zone outside both ends of said scintillator thin plate in said second direction. Thus, the step of bonding the scintillator thin plate with the adhesive, the second step is a step of detecting the dead zone exposed outside both ends in the second direction, and the third step. Forming a groove in the center of the dead zone detected in the second step.
ードが第1の方向に配列されて形成される基板に,一面
に光反射層が形成されたシンチレータ薄板の前記光反射
層が形成された面と反対の面を,光透過性を有する接着
剤で接着する第1の工程と,前記PINフォトダイオー
ドの前記第1の方向と直交する第2の方向での前記シン
チレータ薄板の長さより大なる長さを有する溝を,前記
不感帯の領域に形成し,前記溝により前記シンチレータ
薄板を分離する第2の工程と,前記第2の方向での前記
シンチレータ薄板の長さより大なる長さを有する仕切板
を,前記シンチレータ薄板の前記第2の方向での外部に
前記仕切板の両端部を露出させて,前記溝の内部に挿入
する第3の工程とを有することを特徴とする多素子放射
線検出器の製造方法。13. A scintillator thin plate having a light-reflecting layer formed on one surface of a substrate on which a plurality of PIN photodiodes are arranged in a first direction with a dead zone therebetween, and a surface on which the light-reflecting layer is formed. A first step of bonding the opposite surface with a light-transmitting adhesive, and a length greater than a length of the scintillator thin plate of the PIN photodiode in a second direction orthogonal to the first direction. Forming a groove in the dead zone region, separating the scintillator thin plate by the groove, and forming a partition plate having a length greater than a length of the scintillator thin plate in the second direction. A third step of exposing both ends of the partition plate to the outside of the scintillator thin plate in the second direction and inserting the partition plate into the groove. Manufacturing method .
ードが形成された基板であり,前記PINフォトダイオ
ードが配列して形成される第1の方向での前記基板の長
さが,一面に光反射層が形成されたシンチレータ薄板の
前記第1の方向での長さよりも小であり,前記第1の方
向と直交する第2の方向での前記不感帯の長さが,前記
第2の方向での前記シンチレータ薄板の長さよりも大と
なるように形成された前記基板に,前記不感帯の一部分
が,前記シンチレータ薄板の前記第2の方向での少なく
とも一方の端部の外部で露出するように,前記シンチレ
ータ薄板の前記光反射層が形成された面と反対の面を,
光透過性を有する接着剤で接着する第1の工程と,前記
シンチレータ薄板の前記第2の方向での少なくとも一方
の端部の外部で露出する前記不感帯を検出する第2の工
程と,前記第2の方向での前記シンチレータ薄板の長さ
より大なる長さを有し,前記基板の内部まで達する溝を
前記不感帯の領域に形成し,前記溝により前記シンチレ
ータ薄板を分離する第3の工程と,前記第2の方向での
前記シンチレータ薄板の長さより大なる長さを有する仕
切板を,前記シンチレータ薄板の前記第2の方向での外
部に前記仕切板の両端部を露出させて,前記溝の内部に
挿入する第4の工程とを有することを特徴とする多素子
放射線検出器の製造方法。14. A substrate on which a plurality of PIN photodiodes are formed with a dead zone therebetween, wherein the length of the substrate in a first direction in which the PIN photodiodes are arranged is equal to the length of a light reflecting layer on one surface. The length of the dead zone in a second direction orthogonal to the first direction is smaller than the length of the scintillator thin plate on which the is formed in the first direction, and the length of the dead zone in the second direction is orthogonal to the first direction. The scintillator is formed such that a portion of the dead zone is exposed outside at least one end of the scintillator thin plate in the second direction on the substrate formed to be longer than the length of the scintillator thin plate. The surface of the thin plate opposite to the surface on which the light reflection layer is formed is
A first step of bonding with a light transmissive adhesive; a second step of detecting the dead zone exposed outside at least one end of the scintillator thin plate in the second direction; A third step of forming a groove in the area of the dead zone having a length greater than the length of the scintillator thin plate in the direction 2 and reaching the inside of the substrate, and separating the scintillator thin plate by the groove; A partition plate having a length greater than the length of the scintillator thin plate in the second direction is exposed to both ends of the partition plate to the outside of the scintillator thin plate in the second direction. And a fourth step of inserting the radiation detector into the radiation detector.
において,前記光反射層がアルミニウム蒸着層からなる
ことを特徴とする多素子放射線検出器の製造方法。15. The method of manufacturing a multi-element radiation detector according to claim 10, wherein said light reflection layer comprises an aluminum vapor-deposited layer.
において,前記仕切板は,前記溝により分離された前記
シンチレータ薄板の前記第1の方向の幅の5倍以上だ
け,前記光反射層の面より凸となる寸法を有することを
特徴とする多素子放射線検出器の製造方法。16. The multi-element radiation detector according to claim 10, wherein said partition plate has a width of at least five times a width of said scintillator thin plate separated by said groove in said first direction. A method for manufacturing a multi-element radiation detector, characterized in that it has a dimension that is more convex than the surface.
において,前記光反射層がアルミニウム蒸着層からなる
ことを特徴とする多素子放射線検出器の製造方法。17. A method for manufacturing a multi-element radiation detector according to claim 11, wherein said light reflecting layer is made of an aluminum vapor-deposited layer.
において,前記仕切板は,前記溝により分離された前記
シンチレータ薄板の前記第1の方向の幅の5倍以上だ
け,前記光反射層の面より凸となる寸法を有することを
特徴とする多素子放射線検出器の製造方法。18. The multi-element radiation detector according to claim 11, wherein said partition plate has a thickness of at least five times a width of said scintillator thin plate separated by said groove in said first direction. A method for manufacturing a multi-element radiation detector, characterized in that it has a dimension that is more convex than the surface.
において,前記光反射層がアルミニウム蒸着層からなる
ことを特徴とする多素子放射線検出器の製造方法。19. A method for manufacturing a multi-element radiation detector according to claim 13, wherein said light reflecting layer is made of an aluminum vapor-deposited layer.
において,前記仕切板は,前記溝により分離された前記
シンチレータ薄板の前記第1の方向の幅の5倍以上だ
け,前記光反射層の面より凸となる寸法を有することを
特徴とする多素子放射線検出器の製造方法。20. The multi-element radiation detector according to claim 13, wherein the partition plate has a thickness of at least five times the width of the scintillator thin plate separated by the groove in the first direction. A method for manufacturing a multi-element radiation detector, characterized in that it has a dimension that is more convex than the surface.
において,前記光反射層がアルミニウム蒸着層からなる
ことを特徴とする多素子放射線検出器の製造方法。21. The method for manufacturing a multi-element radiation detector according to claim 14, wherein said light reflecting layer is made of a vapor-deposited aluminum layer.
において,前記仕切板は,前記溝により分離された前記
シンチレータ薄板の前記第1の方向の幅の5倍以上だ
け,前記光反射層の面より凸となる寸法を有することを
特徴とする多素子放射線検出器の製造方法。22. The multi-element radiation detector according to claim 14, wherein the partition plate has a thickness of at least five times the width of the scintillator thin plate separated by the groove in the first direction. A method for manufacturing a multi-element radiation detector, characterized in that it has a dimension that is more convex than the surface.
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JP63014443A Division JP2720159B2 (en) | 1988-01-06 | 1988-01-27 | Multi-element radiation detector and manufacturing method thereof |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001220232A (en) * | 1999-09-01 | 2001-08-14 | General Electric Co <Ge> | Composite ceramic article and method for producing the same |
CN100407445C (en) * | 2002-08-15 | 2008-07-30 | 地太科特技术有限公司 | Packaging structure for imaging detectors |
WO2009044657A1 (en) * | 2007-10-01 | 2009-04-09 | Hamamatsu Photonics K.K. | Radiation detector |
JP2010249847A (en) * | 2010-08-09 | 2010-11-04 | Hamamatsu Photonics Kk | Pet apparatus |
WO2017212986A1 (en) * | 2016-06-08 | 2017-12-14 | 浜松ホトニクス株式会社 | Optical detection unit, optical detection device, and method for manufacturing optical detection unit |
CN114586111A (en) * | 2019-11-13 | 2022-06-03 | 株式会社东芝 | Scintillator array, method for manufacturing scintillator array, radiation detector, and radiation inspection apparatus |
-
1997
- 1997-04-02 JP JP9083539A patent/JP2840941B2/en not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001220232A (en) * | 1999-09-01 | 2001-08-14 | General Electric Co <Ge> | Composite ceramic article and method for producing the same |
CN100407445C (en) * | 2002-08-15 | 2008-07-30 | 地太科特技术有限公司 | Packaging structure for imaging detectors |
WO2009044657A1 (en) * | 2007-10-01 | 2009-04-09 | Hamamatsu Photonics K.K. | Radiation detector |
US8338789B2 (en) | 2007-10-01 | 2012-12-25 | Hamamatsu Photonics K.K. | Radiation detector |
US8552390B2 (en) | 2007-10-01 | 2013-10-08 | Hamamatsu Photonics K. K. | Radiation detector |
JP2010249847A (en) * | 2010-08-09 | 2010-11-04 | Hamamatsu Photonics Kk | Pet apparatus |
WO2017212986A1 (en) * | 2016-06-08 | 2017-12-14 | 浜松ホトニクス株式会社 | Optical detection unit, optical detection device, and method for manufacturing optical detection unit |
JP2017219443A (en) * | 2016-06-08 | 2017-12-14 | 浜松ホトニクス株式会社 | Optical detection unit, optical detection device, and optical detection unit manufacturing method |
US10944016B2 (en) | 2016-06-08 | 2021-03-09 | Hamamatsu Photonics K.K. | Optical detection unit, optical detection device, and method for manufacturing optical detection unit |
CN114586111A (en) * | 2019-11-13 | 2022-06-03 | 株式会社东芝 | Scintillator array, method for manufacturing scintillator array, radiation detector, and radiation inspection apparatus |
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