JPH0998052A - Electronic parts - Google Patents

Electronic parts

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Publication number
JPH0998052A
JPH0998052A JP25274895A JP25274895A JPH0998052A JP H0998052 A JPH0998052 A JP H0998052A JP 25274895 A JP25274895 A JP 25274895A JP 25274895 A JP25274895 A JP 25274895A JP H0998052 A JPH0998052 A JP H0998052A
Authority
JP
Japan
Prior art keywords
electrode
adjustment
frequency
region
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25274895A
Other languages
Japanese (ja)
Inventor
Masaya Nakatani
将也 中谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP25274895A priority Critical patent/JPH0998052A/en
Publication of JPH0998052A publication Critical patent/JPH0998052A/en
Pending legal-status Critical Current

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  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To reduce the adjustment evaporation value that is caused in the later washing process despite the small adjustment of frequency by forming a frequency adjustment film on a base electrode with limitation given to its area to increase the film thickness in the same mass. SOLUTION: A groove part 14 is formed on a crystal plate 11 by a sandblast method, etc., together with a vibration part 13. A base electrode 12a is led to the rear side of the plate 11 via an electrode lead through-hole 15. Thus the vibrations of the part 13 can be obtained as the electric signals by the electrode 12a and a base electrode 12b formed on the rear side of the plate 11. A space 18 is formed on a mask 17 by etching with no contact secured to the electrode 12a and part 13. In an adjustment evaporation process, an adjustment electrode 16, i.e., a frequency adjustment film is evaporated in an area smaller than that of the electrode 12a. Thus the area of the electrode 16 is limited, so that the thickness of the frequency adjustment film is increased in the same mass.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は水晶振動子やSAWデバ
イスなどの電子部品に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to electronic parts such as crystal oscillators and SAW devices.

【0002】[0002]

【従来の技術】水晶振動子は圧電体である水晶板を所定
の厚みにスライスし、水晶板の振動部表面に励振用電極
となるベース電極を形成することで、水晶の振動を電気
的に取り出すことができるが、水晶板の厚み、ベース電
極の膜厚にバラツキが発生して共振周波数がばらつくの
で、これを補正するため、ベース電極上に、周波数調整
膜としての調整用電極をベース電極の形成領域より周囲
約100マイクロメートルほど小さい領域に設けること
で、共振周波数を所望の値に合わせ込む調整蒸着工程を
行っていた。さらに、調整蒸着後には、水晶板の表面の
汚染物質を落とすため、水晶板の表面の洗浄を行うが、
このとき、洗剤とともに超音波洗浄法などを用いて洗浄
を行っていた。
2. Description of the Related Art A crystal oscillator electrically cuts a crystal vibration by slicing a crystal plate, which is a piezoelectric body, into a predetermined thickness, and forming a base electrode as an excitation electrode on the surface of the vibration part of the crystal plate. Although it can be taken out, the resonance frequency fluctuates due to variations in the thickness of the crystal plate and the thickness of the base electrode.Therefore, in order to compensate for this, an adjustment electrode as a frequency adjustment film is provided on the base electrode. The adjustment vapor deposition step of adjusting the resonance frequency to a desired value is performed by providing the area in a region that is smaller than the formation area by about 100 micrometers. Furthermore, after adjustment vapor deposition, the surface of the crystal plate is cleaned to remove contaminants on the surface of the crystal plate.
At this time, cleaning was performed using an ultrasonic cleaning method together with a detergent.

【0003】図10は従来の水晶振動子を示す。1は水
晶板で、サンドブラスト等の工法により溝部4がくり抜
かれており、振動部3が設けられている。2a,2bは
電気信号の励振用及び入出力部となるベース電極であ
る。ベース電極2aは電極引き回し用貫通孔5を介して
裏側に引き回されており、裏側に形成されたベース電極
2bとともに、振動部3の振動を電気信号として取り出
すことができる。一方、図11は従来の周波数調整蒸着
で用いられてきたマスクを示す。このマスク7には、ベ
ース電極2a及び振動部3に接触しないように、スペー
ス8がエッチングにより設けられている。9はマスクの
開口部であり、この領域だけ調整用電極が形成される。
従来のマスクにおいては、開口部9はベース電極2aよ
り周囲約100マイクロメートルほど小さく設計され、
調整蒸着を行う際には、図12の様にマスクをセットす
る。このようにして調整蒸着を行った場合、調整用電極
は図10における6の部分のようにベース電極2aより
少し小さい領域に蒸着される。
FIG. 10 shows a conventional crystal oscillator. Reference numeral 1 is a crystal plate, in which a groove portion 4 is hollowed out by a method such as sandblasting, and a vibrating portion 3 is provided. Reference numerals 2a and 2b are base electrodes for exciting an electric signal and serving as an input / output unit. The base electrode 2a is routed to the back side through the electrode routing through hole 5, and the vibration of the vibrating section 3 can be taken out as an electric signal together with the base electrode 2b formed on the back side. On the other hand, FIG. 11 shows a mask used in conventional frequency adjustment vapor deposition. A space 8 is provided in the mask 7 by etching so as not to come into contact with the base electrode 2a and the vibrating portion 3. Reference numeral 9 is an opening of the mask, and the adjustment electrode is formed only in this area.
In the conventional mask, the opening 9 is designed to be smaller than the base electrode 2a by about 100 μm in circumference,
When adjusting vapor deposition, a mask is set as shown in FIG. When the adjustment vapor deposition is performed in this manner, the adjustment electrode is vapor-deposited in a region slightly smaller than the base electrode 2a as shown by 6 in FIG.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、共振周
波数を調整した調整量が微少である場合、共振周波数の
値は、超音波洗浄法などで水晶板の洗浄を行うと、周波
数調整蒸着を行った時点の値から変化する。これは、調
整蒸着を行った量が微少な時には、蒸着される蒸着物が
極微量であるため、下地との密着力が極端に弱くなり、
洗浄において、はがれ落ちてしまうからである。このた
め、これまで、周波数を調整した量である一定値以上の
ものだけが良品となり、それ以下のものは、周波数が高
くはずれて不良品になるという問題があった。
However, when the amount of adjustment by adjusting the resonance frequency is very small, the value of the resonance frequency is the frequency adjustment vapor deposition when the quartz plate is cleaned by the ultrasonic cleaning method or the like. It changes from the time value. This is because when the amount of adjusted vapor deposition is very small, the amount of vapor deposited is extremely small, so the adhesion to the base becomes extremely weak,
This is because during cleaning, it peels off. Therefore, there has been a problem that until now, only those with a fixed value that is the amount of frequency adjustment or more are good products, and those with less than that are defective products because the frequency is high.

【0005】図13は従来のマスクを用いて実際に行っ
た周波数の調整量と洗浄後の周波数のシフト量の関係を
示したものであるが、これによると、周波数の調整後に
おいて、調整蒸着量が500ppm以下のものについて
は、洗浄後に周波数が高周波側に変化していることがわ
かる。これは、洗浄によって調整蒸着した分が剥がれ落
ちたことを示している。
FIG. 13 shows the relationship between the frequency adjustment amount actually performed using a conventional mask and the frequency shift amount after cleaning. According to this, adjustment vapor deposition is performed after frequency adjustment. It can be seen that, for the amount of 500 ppm or less, the frequency changes to the high frequency side after cleaning. This indicates that the amount of the adjusted vapor deposited by cleaning was peeled off.

【0006】本発明は、周波数の調整量が小さくても、
後の洗浄工程において剥がれ落ちる調整蒸着量を少なく
して、目的周波数に調整可能な電子部品を提供すること
を目的とする。
According to the present invention, even if the amount of frequency adjustment is small,
An object of the present invention is to provide an electronic component that can be adjusted to a target frequency by reducing the amount of adjusted vapor deposition that peels off in the subsequent cleaning step.

【0007】[0007]

【課題を解決するための手段】上記目的を達成するた
め、本発明は、圧電性基板の表面にベース電極を設け、
このベース電極上に周波数調整用膜を構成した電子部品
であって、上記周波数調整用膜は上記ベース電極の形成
領域より小さい領域に設けられ、同質量とするときに膜
厚が大きくなる様に領域を制限して形成したことを特徴
とするものである。
To achieve the above object, the present invention provides a base electrode on the surface of a piezoelectric substrate,
An electronic component in which a frequency adjusting film is formed on the base electrode, wherein the frequency adjusting film is provided in a region smaller than the formation region of the base electrode, and the film thickness is increased when the mass is the same. It is characterized in that it is formed by limiting the area.

【0008】ここで、同質量とするとき膜厚が厚くなる
ように領域を制限して周波数調整膜を形成するには、周
波数調整の際に蒸着される領域が通常より面積が小さく
なるようにマスクの開口部の形状を小さくする。このと
き、開口部分は後の電気的特性に影響を与えないような
形状とすることが望ましい。
Here, in order to form the frequency adjusting film by limiting the region so that the film thickness becomes thicker when the mass is the same, the area to be vapor-deposited during frequency adjustment is smaller than usual. Make the mask opening smaller. At this time, it is desirable that the opening portion has a shape that does not affect the electrical characteristics later.

【0009】[0009]

【作用】上記構造により、周波数調整膜の膜厚が厚くで
きる為、周波数の調整量が小さくても、後の洗浄工程に
おいて剥がれ落ちる調整蒸着量が少なくなり、調整蒸着
量が微少な場合でも、調整蒸着を行った後の洗浄工程で
周波数が変化することが少なくなるので、これまでは不
良品とされていた周波数の調整量の微少なものについて
も、良品とすることができる。
With the above structure, since the thickness of the frequency adjustment film can be increased, even if the adjustment amount of the frequency is small, the adjustment deposition amount that peels off in the subsequent cleaning step is small, and even when the adjustment deposition amount is very small, Since the frequency is less likely to change in the cleaning process after the adjusted vapor deposition, even a product with a small amount of frequency adjustment, which has been considered as a defective product up to now, can be a good product.

【0010】[0010]

【実施例】図1は本発明の一実施例である水晶振動子の
振動板の部分を示す。11は水晶板で、サンドブラスト
等の工法により溝部14がくり抜かれており、振動部1
3が設けられている。12aは電気信号の励振用及び入
出力部となるベース電極である。ベース電極12aは電
極引き回し用貫通孔15を介して裏側に引き回されてお
り、裏側に形成されたベース電極12bとともに、振動
部13の振動を電気信号として取り出すことができる。
図2は本実施例の周波数調整蒸着で用いられるマスクを
示す。このマスク17には、ベース電極12a及び振動
部13に接触しないように、スペース18がエッチング
により設けられている。19はマスクの開口部であり、
この領域だけ調整用電極が形成される。調整蒸着を行う
際には、図3の様にマスクをセットする。このようにし
て調整蒸着を行った場合、周波数調整膜としての調整用
電極は図1における16の部分のようにベース電極12
aより小さい領域に蒸着される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a diaphragm portion of a crystal unit according to an embodiment of the present invention. Reference numeral 11 is a crystal plate, and the groove portion 14 is hollowed out by a method such as sandblasting.
3 are provided. Reference numeral 12a is a base electrode for exciting an electric signal and serving as an input / output unit. The base electrode 12a is routed to the back side through the electrode routing through hole 15, and the vibration of the vibrating portion 13 can be taken out as an electric signal together with the base electrode 12b formed on the back side.
FIG. 2 shows a mask used in the frequency adjustment vapor deposition of this embodiment. A space 18 is provided in the mask 17 by etching so as not to come into contact with the base electrode 12a and the vibrating portion 13. 19 is an opening of the mask,
The adjustment electrode is formed only in this region. When adjusting vapor deposition, a mask is set as shown in FIG. When the adjustment vapor deposition is performed in this way, the adjustment electrode as the frequency adjustment film has the base electrode 12 like the portion 16 in FIG.
It is vapor-deposited in an area smaller than a.

【0011】ここで、周波数の調整後において、調整蒸
着量が500ppm以下のものについては、洗浄後に周
波数が高周波側に変化していることがわかっている。こ
れは、洗浄によって調整蒸着した分が剥がれ落ちたこと
に起因している。一方、洗浄においてはがれ落ちないよ
うにするには、少なくとも、調整量は500ppm以上
である必要がある。つまり、調整蒸着用の蒸着物が50
0ppmの調整を行う程度の膜厚であれば、洗浄におい
てもはがれ落ちることは少ないといえる。
Here, it has been found that, after the frequency adjustment, for the adjustment deposition amount of 500 ppm or less, the frequency changes to the high frequency side after cleaning. This is because the amount of the adjusted vapor deposited by cleaning was peeled off. On the other hand, at least the adjusted amount needs to be 500 ppm or more in order to prevent peeling during cleaning. That is, 50 deposits for adjustment deposition are used.
It can be said that when the film thickness is adjusted to 0 ppm, it does not peel off even during cleaning.

【0012】調整蒸着において、周波数の変化はベース
電極12a上に形成される調整用電極16の膜厚と面積
の積にほぼ比例するから、これから調整しようとする量
が250ppm程度のものであれば、図2のように、マ
スク17の開口部19の面積が1/2である形状とし、
この調整蒸着マスク17を図3の様にセットする。この
とき、水晶板11のベース電極12a上に蒸着される面
積は通常の半分となる。これにより、ベース電極12a
上に形成される調整用電極16は、通常の開口部の場合
より総質量が半分になるので、同じ膜厚に対しては周波
数のシフト量も半分となり、調整する量を250ppm
とした場合、調整用電極16の膜厚は従来の場合に比べ
て約2倍となる。これは、従来の開口部のマスクを用い
た場合の調整量の500ppmに相当するから、調整用
電極16の膜厚は、後の洗浄に十分耐えうるものとする
事ができる。
In the adjustment vapor deposition, the change in frequency is almost proportional to the product of the film thickness and the area of the adjustment electrode 16 formed on the base electrode 12a, so that if the amount to be adjusted is about 250 ppm. As shown in FIG. 2, the area of the opening 19 of the mask 17 is 1/2,
This adjusted vapor deposition mask 17 is set as shown in FIG. At this time, the area deposited on the base electrode 12a of the crystal plate 11 is half the normal area. Thereby, the base electrode 12a
Since the total mass of the adjustment electrode 16 formed above is half that in the case of a normal opening, the amount of frequency shift is also halved for the same film thickness, and the adjustment amount is 250 ppm.
In such a case, the film thickness of the adjustment electrode 16 is about twice as large as that in the conventional case. This corresponds to the adjustment amount of 500 ppm when the conventional mask for the opening is used, so that the film thickness of the adjustment electrode 16 can sufficiently withstand the subsequent cleaning.

【0013】同様に、たとえば調整量が100ppmの
時には、膜厚が5倍となるように、マスクの開口部の面
積を1/5とする大きさに設定すれば同様の効果が得ら
れる。
Similarly, when the adjustment amount is 100 ppm, the same effect can be obtained by setting the size of the opening of the mask to ⅕ so that the film thickness becomes five times.

【0014】尚、上記の実施例において、マスク17の
開口部19の形状を矩形としたが、調整量が極く小さい
場合にはベース電極12上に偏って調整用電極16が形
成される結果となり、水晶振動子としての電気特性に影
響を与えかねない。従って、このような場合には、他
に、図4に示す櫛歯状の開口部22を有するマスク17
を用いた櫛歯状の調整用電極、図5に示す渦巻き状の開
口部22を有するマスク17を用いた渦巻き状の調整用
電極、図6に示す網状の開口部22を有するマスク17
を用いた網状の調整用電極、図7に示す複数の丸状の開
口部22を有するマスク17や図8に示す複数の長孔状
の開口部22を有するマスク17を用いたアイランド形
状の調整用電極を形成すればよい。
In the above embodiment, the shape of the opening 19 of the mask 17 is rectangular. However, when the adjustment amount is extremely small, the adjustment electrode 16 is unevenly formed on the base electrode 12. Therefore, the electric characteristics of the crystal unit may be affected. Therefore, in such a case, the mask 17 having the comb-teeth-shaped opening 22 shown in FIG.
5. A comb-teeth-shaped adjusting electrode using the above, a mask 17 having a spiral opening 22 shown in FIG. 5, and a spiral adjusting electrode using the mask 17 having a mesh-like opening 22 shown in FIG.
Adjustment electrode using a mask, a mask 17 having a plurality of circular openings 22 shown in FIG. 7 and an island shape adjustment using a mask 17 having a plurality of long hole-shaped openings 22 shown in FIG. The electrodes for use may be formed.

【0015】これらのマスクによって、調整用電極を蒸
着すると、ベース電極12a上で均一に形成領域が設け
られるので、水晶振動子の電気的な特性に影響は及ぼさ
ない。このとき、形成領域は規則正しく並んでいる必要
はなく、偏りなく分散されていればよい。
When the adjustment electrode is vapor-deposited by these masks, the formation region is uniformly provided on the base electrode 12a, so that the electrical characteristics of the crystal unit are not affected. At this time, the formation regions do not need to be regularly arranged, but may be dispersed without being biased.

【0016】また、上記実施例では水晶振動子について
説明したが、他に、SAWデバイスにおいても有効であ
る。SAWデバイスの場合は、図9に示すように、圧電
性基板23上に設けた励振用の電極24の形成領域より
小さい領域を調整用領域25とし、この領域25に周波
数調整膜として酸化珪素などの絶縁体を構成する。この
場合、マスクの開口部を調整量によって変えたものを用
いて周波数調整を行うことで、周波数の調整量が非常に
微少な場合でも、周波数調整膜の膜厚を厚くすることが
でき、後の洗浄等にも耐える強固な膜を形成することが
できる。
Further, although the crystal oscillator has been described in the above embodiment, it is also effective in the SAW device. In the case of a SAW device, as shown in FIG. 9, a region smaller than the region where the excitation electrode 24 is formed on the piezoelectric substrate 23 is used as an adjustment region 25, and silicon oxide or the like is used as a frequency adjustment film in this region 25. Constitutes the insulator of. In this case, by adjusting the frequency by using the mask opening changed according to the adjustment amount, it is possible to increase the thickness of the frequency adjustment film even when the frequency adjustment amount is very small. It is possible to form a strong film that can withstand such cleaning.

【0017】[0017]

【発明の効果】このように本発明によれば、ベース電極
上に設けられる周波数調整膜を、同質量とするとき膜厚
が大きくなるように領域を制限して形成したので、周波
数の調整量が小さくとも後の洗浄工程で剥がれ落ちる調
整蒸着量は少ない。従って、調整蒸着量が微少な場合で
も、調整蒸着を行った後の洗浄工程で周波数が変化する
ことが少なく、これまでは不良品とされていた周波数の
調整量の微少なものについても良品とすることができ
る。
As described above, according to the present invention, the frequency adjustment film provided on the base electrode is formed by limiting the region so that the film thickness becomes large when the mass is the same. However, even if it is small, the amount of adjusted vapor deposition that peels off in the subsequent cleaning step is small. Therefore, even if the adjusted deposition amount is small, the frequency does not change in the cleaning process after the adjusted deposition is performed, and even a small amount of the frequency adjustment amount, which was previously considered a defective product, is considered a good product. can do.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例である水晶振動子の振動板部
分を示す平面図
FIG. 1 is a plan view showing a vibrating plate portion of a crystal unit according to an embodiment of the present invention.

【図2】同水晶振動子の調整用電極の形成時に用いられ
るマスクを示す平面図
FIG. 2 is a plan view showing a mask used when forming an adjustment electrode of the crystal unit.

【図3】同調整用電極の形成時の断面図FIG. 3 is a cross-sectional view when forming the adjustment electrode.

【図4】同マスクの他の例を示す平面図FIG. 4 is a plan view showing another example of the mask.

【図5】同マスクの他の例を示す平面図FIG. 5 is a plan view showing another example of the mask.

【図6】同マスクの他の例を示す平面図FIG. 6 is a plan view showing another example of the mask.

【図7】同マスクの他の例を示す平面図FIG. 7 is a plan view showing another example of the mask.

【図8】同マスクの他の例を示す平面図FIG. 8 is a plan view showing another example of the mask.

【図9】本発明の他の実施例であるSAWデバイスを示
す斜視図
FIG. 9 is a perspective view showing a SAW device which is another embodiment of the present invention.

【図10】従来の水晶振動子の振動板部分を示す平面図FIG. 10 is a plan view showing a diaphragm portion of a conventional crystal unit.

【図11】同水晶振動子の調整用電極の形成時に用いら
れてきたマスクを示す平面図
FIG. 11 is a plan view showing a mask that has been used when forming an adjustment electrode of the crystal unit.

【図12】同調整用電極の形成時の断面図FIG. 12 is a cross-sectional view of the adjustment electrode when being formed.

【図13】同水晶振動子における調整蒸着を行った調整
量と洗浄後の周波数のシフト量の関係を示す相関図
FIG. 13 is a correlation diagram showing the relationship between the adjustment amount after the adjustment vapor deposition and the frequency shift amount after cleaning in the crystal unit.

【符号の説明】[Explanation of symbols]

1,11 水晶板 2a,2b,12a,12b ベース電極 3,13 振動部 4,14 溝部 5,15 電極引き回し用貫通孔 6,16 調整用電極 7,17 マスク 8,18 電極逃げスペース 9,19 開口部 22 開口部 23 圧電性基板 24 励振用電極 25 調整用領域 1,11 Quartz plate 2a, 2b, 12a, 12b Base electrode 3,13 Vibrating part 4,14 Groove part 5,15 Through hole for electrode routing 6,16 Adjustment electrode 7,17 Mask 8,18 Electrode escape space 9,19 Opening 22 Opening 23 Piezoelectric Substrate 24 Excitation Electrode 25 Adjustment Area

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 圧電性基板の表面にベース電極を設け、
このベース電極上に周波数調整用膜を構成した電子部品
であって、上記周波数調整用膜は上記ベース電極の形成
領域より小さい領域に設けられ、同質量とするときに膜
厚が大きくなる様に領域を制限して形成した電子部品。
1. A base electrode is provided on the surface of a piezoelectric substrate,
An electronic component in which a frequency adjusting film is formed on the base electrode, wherein the frequency adjusting film is provided in a region smaller than the formation region of the base electrode, and the film thickness is increased when the mass is the same. An electronic component formed by limiting the area.
【請求項2】 圧電性材料からなる基板の表面に設けた
ベース電極と、この電極上に設けた調整用電極より構成
される入出力電極を備える電子部品であって、上記調整
用電極は上記ベース電極の形成領域より小さい領域に設
けられ、同質量とするときに膜厚が大きくなる様に領域
を制限して形成した電子部品。
2. An electronic component comprising a base electrode provided on the surface of a substrate made of a piezoelectric material, and an input / output electrode composed of an adjustment electrode provided on the electrode, wherein the adjustment electrode is the above-mentioned electrode. An electronic component that is provided in a region smaller than the region where the base electrode is formed and is formed by limiting the region so that the film thickness increases when the mass is the same.
【請求項3】 調整用電極を形成する領域を櫛歯状にし
た請求項2記載の電子部品。
3. The electronic component according to claim 2, wherein the region where the adjustment electrode is formed is comb-shaped.
【請求項4】 調整用電極を形成する領域を渦巻き状に
した請求項2記載の電子部品。
4. The electronic component according to claim 2, wherein a region where the adjustment electrode is formed has a spiral shape.
【請求項5】 調整用電極を形成する領域を網状にした
請求項2記載の電子部品。
5. The electronic component according to claim 2, wherein a region where the adjustment electrode is formed has a mesh shape.
【請求項6】 調整用電極を形成する領域をアイランド
形状にした請求項2記載の電子部品。
6. The electronic component according to claim 2, wherein a region where the adjustment electrode is formed has an island shape.
JP25274895A 1995-09-29 1995-09-29 Electronic parts Pending JPH0998052A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25274895A JPH0998052A (en) 1995-09-29 1995-09-29 Electronic parts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25274895A JPH0998052A (en) 1995-09-29 1995-09-29 Electronic parts

Publications (1)

Publication Number Publication Date
JPH0998052A true JPH0998052A (en) 1997-04-08

Family

ID=17241739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25274895A Pending JPH0998052A (en) 1995-09-29 1995-09-29 Electronic parts

Country Status (1)

Country Link
JP (1) JPH0998052A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007535279A (en) * 2004-05-07 2007-11-29 インテル・コーポレーション Formation of integrated multi-frequency band piezoelectric thin film resonator (FBAR)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007535279A (en) * 2004-05-07 2007-11-29 インテル・コーポレーション Formation of integrated multi-frequency band piezoelectric thin film resonator (FBAR)

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