JP3255456B2 - Manufacturing method of ultra-thin piezoelectric resonator element plate - Google Patents

Manufacturing method of ultra-thin piezoelectric resonator element plate

Info

Publication number
JP3255456B2
JP3255456B2 JP20035192A JP20035192A JP3255456B2 JP 3255456 B2 JP3255456 B2 JP 3255456B2 JP 20035192 A JP20035192 A JP 20035192A JP 20035192 A JP20035192 A JP 20035192A JP 3255456 B2 JP3255456 B2 JP 3255456B2
Authority
JP
Japan
Prior art keywords
ultra
recesses
thickness
thin
resonator element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP20035192A
Other languages
Japanese (ja)
Other versions
JPH0621740A (en
Inventor
修 石井
Original Assignee
東洋通信機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東洋通信機株式会社 filed Critical 東洋通信機株式会社
Priority to JP20035192A priority Critical patent/JP3255456B2/en
Publication of JPH0621740A publication Critical patent/JPH0621740A/en
Application granted granted Critical
Publication of JP3255456B2 publication Critical patent/JP3255456B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Weting (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は超薄板圧電共振子素板の
製造方法、より詳細にはその素板の共振周波数の微調整
方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an ultra-thin piezoelectric resonator element, and more particularly to a method of fine-tuning the resonance frequency of the element.

【0002】[0002]

【従来技術】各種通信機、電子機器の超小型化、超薄型
化及び高周波化への要求が厳しくなるに従い、これら機
器に使用する圧電振動子、フィルタの如き圧電デバイス
も又超小型化が要求されると共に温度特性の向上、オ−
バ−ト−ン発振回路の如きIC化の困難な素子を含む付
属回路の除去が必須の条件とされるようになってきた。
斯かる趨勢に鑑み本願発明者等は、例えばATカット水
晶を用い、15μm程度の厚さの振動部周辺にこれと一
体に厚肉の環状囲繞部を設けることによって前記振動部
の機械的形状を維持し、基本波振動にて100MHzを
越える共振を得ることの可能な超薄板圧電共振子の基本
的製造技術を確立した。
2. Description of the Related Art As the demands for ultra-miniaturization, ultra-thinness and high frequency of various communication devices and electronic devices become strict, piezoelectric devices such as piezoelectric vibrators and filters used in these devices are also becoming ultra-miniaturized. Required and improved temperature characteristics,
It has become an essential condition to remove an accessory circuit including an element which is difficult to be integrated into a circuit such as a part oscillation circuit.
In view of such a trend, the present inventors, for example, use an AT-cut quartz crystal and provide a thick annular surrounding portion integrally with a vibrating portion having a thickness of about 15 μm around the vibrating portion, thereby reducing the mechanical shape of the vibrating portion. We have established a basic manufacturing technique for ultra-thin-plate piezoelectric resonators that can maintain and obtain resonance exceeding 100 MHz by fundamental wave vibration.

【0003】しかしながら、前記環状囲繞部内の凹陥底
部によって形成される超薄振動部の厚さは、例えば機械
加工による凹陥形成工程のみでは所望の値とバラツキの
内には収まらない為、単一の圧電ウエファ上に多数の凹
陥を形成した後で各凹陥底部の振動部の厚さを測定する
ことによって夫々の微調整量を決定し、これをエッチン
グにて処理する必要があるが、この際各凹陥相互の間隔
が極めて小であること及びこの凹陥の深さが60乃至7
0μm程度であることに起因してエッチング液が隣接す
る他の凹陥に流入したり、エッチング液の蒸気が微調整
不要の凹陥底部を侵し当該振動部板厚を更に減少せしめ
たり或はエッチング液を滴下するディスペンサのわずか
な変調によってエッチング液が充分に滴下されず、所要
のエッチング時間が経過しない内に蒸発してしまう等の
問題があり、製品の歩留が向上しないと云う欠陥があっ
た。
[0003] However, the thickness of the ultra-thin vibrating portion formed by the concave bottom portion in the annular surrounding portion does not fall within a desired value and variation only by the process of forming the concave portion by, for example, machining. After forming a number of depressions on the piezoelectric wafer, each fine adjustment amount is determined by measuring the thickness of the vibrating portion of each depression bottom, and it is necessary to process these by etching. The spacing between the recesses is very small and the depth of the recesses is between 60 and 7
Due to the thickness of about 0 μm, the etching solution flows into another adjacent recess, the vapor of the etching solution invades the bottom of the recess which does not require fine adjustment, and further reduces the thickness of the vibrating portion, or reduces the etching solution. There is a problem that the etching liquid is not sufficiently dropped due to slight modulation of the dispenser to be dropped, and the etching liquid evaporates before a required etching time elapses, and there is a defect that the product yield is not improved.

【0004】[0004]

【発明の目的】本発明は上述した如き超薄板圧電共振子
の素板段階での従来の振動部板厚微調整工程上の欠陥を
除去し、当該工程の失敗による製品歩留の低下を防止し
得る超薄板圧電共振子素板の製造方法を提供せんとする
ものである。
SUMMARY OF THE INVENTION It is an object of the present invention to eliminate defects in the conventional fine adjustment process of the vibrating portion plate thickness at the base plate stage of the ultra-thin piezoelectric resonator as described above, and to reduce the product yield due to failure of the process. It is an object of the present invention to provide a method of manufacturing an ultra-thin piezoelectric resonator element that can be prevented.

【0005】[0005]

【発明の概要】上述の目的を達成するため、本発明に係
る製造方法は以下の如き手順をとる。即ち、圧電ウエフ
ァ上に多数の凹陥を機械加工或はエッチングによって形
成した後、共振子の振動部たる凹陥底部の肉厚を夫々該
部の共振周波数に変換して測定した結果に基づいて振動
部肉厚の調整量を決定した上でこれら調整をエッチング
によって行うに際し、前記各凹陥の位置に対応する孔を
設けた厚板を圧電ウエファの凹陥側表面に接着し、該孔
を介して前記圧電ウエファの凹陥内に夫々所定量のエッ
チング液を滴下するようにしたものである。
SUMMARY OF THE INVENTION In order to achieve the above object, the manufacturing method according to the present invention takes the following procedures. That is, after forming a large number of recesses on a piezoelectric wafer by machining or etching, the thickness of the bottom of the recess, which is the vibrating portion of the resonator, is converted into the resonance frequency of each portion, and the vibration portion is formed based on the measurement result. When the thickness adjustment is determined and these adjustments are performed by etching, a thick plate provided with holes corresponding to the positions of the recesses is adhered to the surface of the piezoelectric wafer on the side of the recess, and the piezoelectric plate is inserted through the holes. A predetermined amount of an etching solution is dropped into each of the recesses of the wafer.

【0006】[0006]

【実施例】以下、本発明を図面に示した実施例に基づい
て詳細に説明する。実施例の説明に先立って、本発明の
理解を助ける為本願発明者が従来から実施していた超薄
板圧電共振子素板振動部の厚さ微調整方法についてその
概要を解説する。図 2(a)は、例えば機械加工によ
って水晶ウエファ1表面に多数の凹陥2、2、・・・を
形成しその底部を超薄の振動部とした超薄板圧電共振子
素板の半製品であって、斯かる加工のみで共振子の共振
周波数を実質的に決定する振動部の厚さを所要の値とバ
ラツキの範囲に仕上げることは殆ど不可能である。そこ
で、上記半製品の各振動部を構成する凹陥2、2、・・
・の底部板厚を周知の手法、即ち、振動部表裏に電極を
当接し夫々の共振周波数を測定し、この結果を板厚に換
算して板厚調整量を決定した後、同図(b)に示す如く
エッチングに長時間を要するものから順番にディスペン
サ3にてエッチング液4を滴下し、エッチング液4の滴
下終了から所定時間経過後当該ウエファ1を洗浄すると
云う手法を用いて各振動部の板厚を所望の値とバラツキ
に収めるのであるが、凹陥の深さは60乃至70μm程
度、凹陥を含む共振子エレメントの平面寸法は圧電ウエ
ファから切り出した際には3mmX3mm程度である
為、凹陥相互の間隔は極めて近接している結果、隣接凹
陥へのエッチング液の流入、エッチング液の蒸気による
微調整不要の凹陥の過剰エッチング或はディスペンサの
わずかな変調によるエッチング液不足に起因する振動部
板厚の調整不足等々の問題があり、この結果共振子素板
の加工段階での歩留が低いと云う欠陥があったこと前述
の通りである。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the embodiments shown in the drawings. Prior to the description of the embodiments, an outline of a method of finely adjusting the thickness of the vibrating portion of the ultra-thin piezoelectric resonator element plate, which has been conventionally performed by the inventor of the present application, will be described to assist understanding of the present invention. FIG. 2 (a) shows a semi-finished product of an ultra-thin piezoelectric resonator element plate having a large number of recesses 2, 2,... However, it is almost impossible to finish the thickness of the vibrating portion, which substantially determines the resonance frequency of the resonator, to a required value and in a range of variation only by such processing. Therefore, the recesses 2, 2,.
The bottom plate thickness is determined by a known method, that is, the electrodes are brought into contact with the front and back surfaces of the vibrating portion to measure the respective resonance frequencies, and the results are converted into the plate thickness to determine the plate thickness adjustment amount. As shown in ()), each of the vibrating portions is dropped by using a method in which the etching solution 4 is dropped by the dispenser 3 in order from the one that requires a long time for etching, and the wafer 1 is washed after a predetermined time has elapsed after the dropping of the etching solution 4. The thickness of the recess is set to a desired value, but the depth of the recess is about 60 to 70 μm, and the planar dimension of the resonator element including the recess is about 3 mm × 3 mm when cut out from the piezoelectric wafer. Due to the close proximity to each other, inflow of the etchant into adjacent recesses, overetching of the recesses without fine adjustment by the vapor of the etchant or slight modulation of the dispenser There is etching liquid issues so insufficient adjustment of the vibration part thickness due to insufficient as previously described to yield at processing steps result resonator element plate has a defect referred low.

【0007】この問題を解決する為、本発明に係る超薄
板圧電共振子素板の製造には以下の如き手法をとる。即
ち、一次加工を終了し、各凹陥底部の振動部板厚測定が
完了した圧電ウエファ1の凹陥側表面に図 1(a)に
示す如く圧電ウエファ1の各凹陥2、2、・・・の位置
に対応する孔5、5、・・・を設けたベ−クライトの厚
板6を接着剤7にて接着し、該孔を介して凹陥2、2、
・・・内にエッチング液4を滴下する(同図(b)参
照)。斯くすることによって、各凹陥に夫々充分な量の
エッチング液を滴下しても隣接する他の凹陥にエッチン
グ液が流入する虞れがないのでエッチング液ディスペン
サの制御は精密を要せず、従って製造設備を安価なもの
とすることが出来よう。又、各凹陥には充分なエッチン
グ液が与えられるのでエッチング工程の途中で液が蒸発
し振動部板厚の調整未了と云う失敗が発生することもな
い。 更に振動部板厚の調整不要な凹陥内に隣接する凹
陥内のエッチング液の蒸気が流入し難いので、これに起
因する振動部板厚の過剰調整の虞れもなくなる。
In order to solve this problem, the following method is used for manufacturing the ultra-thin piezoelectric resonator element plate according to the present invention. That is, as shown in FIG. 1 (a), the concave portions 2, 2,... Of the piezoelectric wafer 1 are formed on the concave side surface of the piezoelectric wafer 1 after the primary processing is completed and the vibration part plate thickness measurement of each concave bottom is completed. A plate 6 of bakelite provided with holes 5, 5,... Corresponding to the positions is bonded with an adhesive 7, and recesses 2, 2,.
..., the etching solution 4 is dropped therein (see FIG. 3B). In this manner, even if a sufficient amount of the etching solution is dripped into each of the depressions, there is no possibility that the etching solution flows into the other adjacent depressions. Equipment could be inexpensive. Further, since a sufficient etching solution is supplied to each of the recesses, the solution does not evaporate during the etching process and a failure such as incomplete adjustment of the thickness of the vibrating portion does not occur. Further, since the vapor of the etching solution in the adjacent recess is hard to flow into the recess which does not require the adjustment of the vibration portion plate thickness, there is no danger of excessive adjustment of the vibration portion plate thickness due to this.

【0008】以上、本発明の一実施例について説明した
が、本発明はこれのみに限定されるものではなく、前記
多孔厚板はテフロン系樹脂の如くエッチング液に侵され
ないものであればよく、その厚さも5乃至10mm程度
で充分である。又、上記多孔板と圧電ウエファとの接着
剤もエッチング液に侵されず、しかも両者を容易に分離
し得る溶剤が存在するものであれば如何なるものでもよ
い。尚、上述した振動部板厚微調整終了後の工程として
は、先ず前記多孔板6を溶剤を用いて圧電ウエファ1か
ら引き離し、圧電ウエファの凹陥側には例えばアルミニ
ウムを全面蒸着して全面電極8とし、平坦側の前記凹陥
2、2、・・・のほぼ中央に対応する位置には所要の部
分電極9をマスク蒸着或はフォト・エッチングにて形成
し、然る後に圧電ウエファを前記凹陥相互の境界に沿っ
て縦横に切断し同図(c)に示す如き超薄板圧電共振子
エレメントを得るが、更にこれらエレメントをパッケ−
ジに組み込み、所要の配線を行った後電極への付加蒸着
による最終的な共振周波数の合わせ込みを行うものであ
る。
Although the embodiment of the present invention has been described above, the present invention is not limited to this, and the porous thick plate may be any one which is not affected by an etching solution such as a Teflon resin. A thickness of about 5 to 10 mm is sufficient. Further, any adhesive may be used as long as the adhesive between the perforated plate and the piezoelectric wafer is not affected by the etchant and a solvent exists that can easily separate the two. As a step after the above-mentioned fine adjustment of the vibrating portion plate thickness, first, the porous plate 6 is separated from the piezoelectric wafer 1 by using a solvent, and for example, aluminum is entirely deposited on the concave side of the piezoelectric wafer and the entire electrode 8 is formed. A required partial electrode 9 is formed at a position substantially corresponding to the center of the recesses 2, 2,... On the flat side by mask evaporation or photo-etching. (C) to obtain an ultra-thin piezoelectric resonator element as shown in FIG.
After the necessary wiring is performed, the final resonance frequency is adjusted by additional deposition on the electrodes.

【0009】[0009]

【発明の効果】本発明は以上説明した如き方法にて超薄
板圧電共振子エレメントの素板段階での共振周波数微調
整を行うものであるから、簡単な治具とわずかな工程の
増加のみで当該微調整工程で発生していたエッチングの
過剰或は不足を防止し、製品の歩留を向上する上で著し
い効果を発揮する。
According to the present invention, since the resonance frequency is finely adjusted at the raw plate stage of the ultra-thin piezoelectric resonator element by the method described above, only a simple jig and a slight increase in the number of steps are required. Thus, excessive or insufficient etching which has occurred in the fine adjustment step is prevented, and a remarkable effect is exhibited in improving the product yield.

【0010】[0010]

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)は本発明に係る製造方法に於いて使用す
る多孔厚板の一実施例を示す斜視図。(b)は本発明に
係る製造方法による共振周波数微調整を行っている状態
を示す断面図。(c)は製品たる超薄板圧電共振子エレ
メントの断面図。
FIG. 1A is a perspective view showing one embodiment of a porous thick plate used in the manufacturing method according to the present invention. (B) is sectional drawing which shows the state which is performing the resonance frequency fine adjustment by the manufacturing method which concerns on this invention. (C) is a sectional view of an ultra-thin plate piezoelectric resonator element as a product.

【図2】(a)は本発明を適用すべき多数の凹陥を形成
した圧電ウエファの斜視図。(b)は従来の圧電ウエフ
ァ凹陥底部板厚の微調整による共振周波数調整方法を説
明する断面図。
FIG. 2 (a) is a perspective view of a piezoelectric wafer having a large number of recesses to which the present invention is applied. FIG. 4B is a cross-sectional view illustrating a conventional method of adjusting the resonance frequency by finely adjusting the thickness of the piezoelectric wafer concave bottom plate.

【符合の説明】[Description of sign]

1・・・多数の凹陥を形成した圧電ウエファ 2・・・凹陥 4・・・エッチング液 5・・・孔 6・・・多孔板 7・・・接着剤 DESCRIPTION OF SYMBOLS 1 ... Piezoelectric wafer which formed many recesses 2 ... Depression 4 ... Etching liquid 5 ... Hole 6 ... Perforated plate 7 ... Adhesive

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】超薄振動部の周囲にこれと一体の厚肉環状
囲繞部を有する超薄板圧電共振子素板を単一の圧電ウエ
ファ上に同時に多数形成した後夫々の素板振動部の厚さ
をエッチングによって微調整するに際して、前記圧電ウ
エファの環状囲繞部に包囲された凹陥が形成された側の
表面に前記凹陥に夫々対応する孔を設けた厚板を接着
し、前記孔を介して前記凹陥内に夫々所要量のエッチン
グ液を滴下することによって、一凹陥内のエッチング液
又はその蒸気が隣接する他の凹陥底部を構成する振動部
の厚さ微調整に影響を及ぼさないようにしたことを特徴
とする超薄板圧電共振子素板の製造方法。
1. A plurality of ultra-thin piezo-resonator blanks having a thick annular surrounding portion integrated therewith around an ultra-thin oscillating portion are formed on a single piezoelectric wafer at the same time. When finely adjusting the thickness of the piezoelectric wafer by etching, a thick plate provided with holes respectively corresponding to the recesses is adhered to the surface of the piezoelectric wafer surrounded by the annular surrounding portion on the side where the recesses are formed. The required amount of the etching solution is dropped into the recesses through the recesses, so that the etching solution or the vapor thereof in one recess does not affect the fine adjustment of the thickness of the vibrating portion constituting another adjacent recess bottom portion. A method for manufacturing an ultra-thin piezoelectric resonator element plate, comprising the steps of:
JP20035192A 1992-07-03 1992-07-03 Manufacturing method of ultra-thin piezoelectric resonator element plate Expired - Lifetime JP3255456B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20035192A JP3255456B2 (en) 1992-07-03 1992-07-03 Manufacturing method of ultra-thin piezoelectric resonator element plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20035192A JP3255456B2 (en) 1992-07-03 1992-07-03 Manufacturing method of ultra-thin piezoelectric resonator element plate

Publications (2)

Publication Number Publication Date
JPH0621740A JPH0621740A (en) 1994-01-28
JP3255456B2 true JP3255456B2 (en) 2002-02-12

Family

ID=16422858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20035192A Expired - Lifetime JP3255456B2 (en) 1992-07-03 1992-07-03 Manufacturing method of ultra-thin piezoelectric resonator element plate

Country Status (1)

Country Link
JP (1) JP3255456B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4538871B2 (en) * 1999-10-01 2010-09-08 エプソントヨコム株式会社 Method and apparatus for manufacturing ultrathin piezoelectric resonator element plate
JP4955038B2 (en) * 2009-06-29 2012-06-20 日本電波工業株式会社 Quartz crystal manufacturing method and crystal resonator manufactured by this method

Also Published As

Publication number Publication date
JPH0621740A (en) 1994-01-28

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