JPH0992622A - Semiconductor manufacturing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent dissolution and disconnection at the fold-back part of the heater of a planar electrical heating element. SOLUTION: A semiconductor manufacturing device is constituted of a circular-plate-shaped heating plate 7 where the upper surface of a planar electrical heating element 2 is equally divided into a plurality of fan-shaped sections 8, a groove 9 which is formed by folding back in concentric shape from a center side to a peripheral edge side for each section 8 and from the peripheral edge side to the center side, a long heater 10 in a rectangular section in side direction being buried to the groove 9, and a circular-plate-shaped presser plate 11 which is superposed on the heating plate 7 and is made of crystal with improved transmission property of infrared rays, where the width of a fold-back part 15 of the heater 10 is set to approximately 1.5 times larger or more than the width of a concentric circular part 16.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus such as CVD or sputtering for causing a chemical reaction of a gas introduced on a substrate on a planar heating element in a reaction chamber to form a thin film on the substrate, Particularly, it relates to a sheet heating element.

[0002]

2. Description of the Related Art Generally, a semiconductor manufacturing apparatus is disclosed in
As disclosed in Japanese Unexamined Patent Publication No. 220718 (H01L 21/205), as shown in FIG. 3, a planar heating element 2 is provided in a reaction chamber 1, a substrate 3 is placed on the heating element 2, and the substrate 3 is heated. The material 2 is heated to a high temperature and a gas 4 of a material to be formed into a film is introduced into the reaction chamber 1 to decompose, reduce, oxidize,
A chemical reaction such as substitution is performed to form a desired thin film on the substrate 3. In the figure, 5 is a heater and 6 is an electrode.

The sheet heating element 2 is as shown in FIGS. 4 to 7. In these drawings, reference numeral 7 denotes a disk-shaped heating plate of the sheet heating element 2, which is made of a transparent transparent melting type quartz that transmits infrared rays well. 8 is a hot plate 7
Is a section formed by equally dividing the upper surface of the above into a plurality of fan shapes, and the figure shows four divisions, preferably three or more divisions.

Reference numeral 9 denotes a groove formed by concentrically folding back in each section 8, which is formed in order from the central portion side to the peripheral portion side and from the peripheral portion side to the central portion side. The groove 9 is communicated with the groove 9 of the adjacent section 8 on the central side or the peripheral side.

Reference numeral 10 denotes a heater embedded in the groove 9, which has a rectangular cross section that is long in the lateral direction, and is formed by punching from a plate body.

Reference numeral 11 denotes an upper pressing plate which is superposed on the upper surface of the heating plate 7, and is made of the same material as that of the heating plate 7, and a part of the lower surface fits above the groove 9. Reference numeral 12 denotes a lower holding plate that is superposed on the lower surface of the heating plate 7, and is made of the same material as the heating plate 7.

Reference numeral 13 is a housing for the sheet heating element 2,
It consists of SUS304. Reference numeral 14 denotes a susceptor on the upper holding plate 11, which is made of the same material as the heating plate 7 and on which the substrate 3 is placed.

Then, as described above, when the susceptor 14 is made of quartz, which transmits infrared rays well, the heat from the heater 10 passes through the upper holding plate 11 and the susceptor 14 and is transferred to the substrate 3 as radiant heat. Therefore, the substrate 3 is heated more rapidly.

[0009]

In the case of the above-mentioned conventional apparatus, when the current flowing through the heater 10 becomes large, the heater 1
Since the electric field concentration occurs at the folded portion 15 of 0, there is a problem that the heater 10 melts or breaks. The present invention has been made in consideration of the above points, and an object of the present invention is to provide a semiconductor manufacturing apparatus in which melting and disconnection do not occur at the folded portion of the heater even when the current flowing through the heater of the sheet heating element is large.

[0010]

In order to solve the above-mentioned problems, a semiconductor manufacturing apparatus of the present invention provides a substrate on a planar heating element of a reaction chamber and conducts a chemical reaction of a gas introduced on the substrate. In a semiconductor manufacturing apparatus such as CVD or sputtering for forming a thin film on the substrate, the planar heating element is a disk-shaped heating plate whose upper surface is equally divided into a plurality of fan-shaped sections,
A groove formed by concentrically folding back from the central portion side to the peripheral portion side, from the peripheral portion side to the central portion side for each of the sections,
A heater having a rectangular cross section that is long in the lateral direction and embedded in the groove; and a disk-shaped holding plate made of quartz that is superposed on the hot plate and has good infrared ray transmission, and the heater The width of the folded portion is about 1.5 times or more the width of the concentric portion.

Therefore, since the width of the folded portion of the heater is considerably larger than the width of the concentric portion, the current to the heater can be greatly increased and the heater temperature can be increased.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described with reference to FIG. In the figure, the same symbols as those in FIG. 4 indicate the same or corresponding ones, and the points different from the conventional planar heating element are as follows.

The width of the folded portion 15 of the heater 10 is about 1.5 times or more the width of the concentric circular portion 16. Furthermore, it is desirable to form a radius inside the folded-back portion 15 so as to have roundness.

Therefore, even when a large current is applied to the heater 10, electric field concentration does not occur in the folded portion 15, and the heater 10
Can be prevented from melting or breaking.

[0015]

EXAMPLE The width of the folded portion 15 is changed from the conventional 5 mm to 10 mm while the width of the concentric circular portion 16 of the heater 10 is 5 mm, and the heater 10 is Ni0.8, Cr0.2 in weight ratio and has a thickness of 0. It was 0.5 mm, and it was tested how many times the heater 10 could be heated under the operating conditions of the low pressure CVD apparatus.

Atmosphere gas: N ₂ Vacuum degree: 0.6 Torr Gas flow rate: 100 cc / min Heater size: φ200 mm (outer diameter) Temperature rising speed: 10 ° C./min As a result, the conventional heater temperature is 820 ° C. Although the wire was broken, in the case of the present invention, it was not broken up to 920 ° C.

FIG. 2 shows the experimental results of the relationship between the width of the folded portion / the width of the concentric portion and the temperature of the wire breakage.
The wire did not break up to 0 ° C.

[0018]

Since the present invention is constructed as described above, it has the following effects. In the semiconductor manufacturing apparatus of the present invention, in the heater that is folded back concentrically in the planar heating element of the anti-reservoir chamber, the width of the folded portion is about 1.5 times or more the width of the concentric portion. Even if the current flowing to the
It is possible to prevent the heater from melting or breaking, and it is possible to raise the heater temperature.

[Brief description of drawings]

FIG. 1 is a partially cutaway plan view of a planar heating element according to an embodiment of the present invention.

FIG. 2 is a diagram showing a relationship between a width of a folded portion / a width of a concentric circular portion of a heater and a disconnection temperature.

FIG. 3 is a schematic front view of a reaction chamber.

FIG. 4 is a partially cutaway plan view of a conventional sheet heating element.

5 is a cutaway front view of FIG. 4. FIG.

FIG. 6 is an enlarged view of a part of FIG.

FIG. 7 is a partially cutaway front view showing a state where a sheet heating element is incorporated.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Reaction chamber 2 Sheet heating element 3 Substrate 7 Heat plate 8 Partition 9 Groove 10 Heater 11 Holding plate 15 Folding part 16 Concentric part

Claims (1)

[Claims] 1. A semiconductor manufacturing apparatus, such as CVD or sputtering, in which a substrate is provided on a planar heating element in a reaction chamber, a chemical reaction of a gas introduced on the substrate is performed, and a thin film is formed on the substrate. , A disk-shaped heat plate obtained by equally dividing the planar heating element into a plurality of fan-shaped compartments, and a central portion to a peripheral portion side and a peripheral portion side to a central portion side for each of the compartments. A groove formed by folding back concentrically, a heater embedded in the groove and having a rectangular cross-section that is long in the lateral direction, and quartz that is polymerized into the hot plate and has good infrared ray transmission. A semiconductor manufacturing apparatus comprising a disc-shaped pressing plate, wherein the width of the folded portion of the heater is about 1.5 times or more the width of the concentric portion.