JPH0992504A - Selection of ptc ceramic element and manufacture thereof - Google Patents

Selection of ptc ceramic element and manufacture thereof

Info

Publication number
JPH0992504A
JPH0992504A JP24344495A JP24344495A JPH0992504A JP H0992504 A JPH0992504 A JP H0992504A JP 24344495 A JP24344495 A JP 24344495A JP 24344495 A JP24344495 A JP 24344495A JP H0992504 A JPH0992504 A JP H0992504A
Authority
JP
Japan
Prior art keywords
ceramic element
ptc ceramic
current
ptc
inrush current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24344495A
Other languages
Japanese (ja)
Other versions
JP3121531B2 (en
Inventor
Takashi Kaimoto
隆 貝本
Tetsuo Miyazono
哲郎 宮園
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Tungsten Co Ltd
Original Assignee
Nippon Tungsten Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Tungsten Co Ltd filed Critical Nippon Tungsten Co Ltd
Priority to JP07243444A priority Critical patent/JP3121531B2/en
Publication of JPH0992504A publication Critical patent/JPH0992504A/en
Application granted granted Critical
Publication of JP3121531B2 publication Critical patent/JP3121531B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To obtain a PTC ceramic element which does not abnormally rise in temperature and have uniform heating characteristics by a method wherein the inrush current and the steady-state current corresponding to the prescribed surface temperature is set at the upper limit value, and a PTC ceramic element, having the inrush current and the steady-state current exceeding the upper limit value and the lower limit value, is selected. SOLUTION: In the titled PTC ceramic element 1 on which a pair of electrodes 2a and 2b are formed on one surface leaving an interval or a pair of electrodes 2 and 2 are formed on the opposing surface, an inrush current and a steady-state current are adjusted by providing a cut groove 3 on both or one of the electrodes, and the PTC ceramic element, having the inrush current and the steady-state current within the range of preset value is selected and manufactured. Accordingly, the PTC ceramic element can be accurately selected as the selection is conducted on the basis of the inrush current, and a PTC ceramic element, which is abnormally heated up exceeding the pres cribed temperature, can be eliminated.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、PTCセラミック
素子に関し、特に所定温度以上に異常昇温しない加熱特
性が揃ったPTCセラミック素子の選別及びその製造方
法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a PTC ceramic element, and more particularly to a method for selecting PTC ceramic elements having uniform heating characteristics that prevent abnormal temperature rise above a predetermined temperature and a method for manufacturing the same.

【0002】[0002]

【従来の技術】従来、チタン酸バリウムを主成分とする
PTCセラミック素子では、その選別は抵抗値により行
われているが、PTCセラミック素子の抵抗値は製造過
程での焼成温度、焼成時間、雰囲気等の影響を受けやす
く、そのため、抵抗値にばらつきを生じ、抵抗値が規格
から外れる場合があった。規格から外れたPTCセラミ
ック素子は、その抵抗値を調整できないために不良品と
なっていた。
2. Description of the Related Art Conventionally, in a PTC ceramic element containing barium titanate as a main component, the selection is made by a resistance value. However, the resistance value of the PTC ceramic element is determined by the firing temperature, firing time, atmosphere in the manufacturing process. Therefore, the resistance value may vary and the resistance value may deviate from the standard. The PTC ceramic element which is out of the standard is defective because the resistance value cannot be adjusted.

【0003】これを解決するために、実開昭63ー10
502号等によりPTCセラミック素子の抵抗値を調整
する方法が提案されている。図10は従来の抵抗値の調
整方法の説明図で、PTCセラミック素子1の一方の面
には間隔を隔てて一対の電極2a、2bが形成されると
共に他方の面には一つの電極2cが形成され、電極2c
をxの幅だけ削除して、電極2cの面積を減少させるこ
とにより抵抗値の調整を行うものである。
[0003] In order to solve this, the actual exploitation Sho 63-10
No. 502 and the like propose a method of adjusting the resistance value of a PTC ceramic element. FIG. 10 is an explanatory view of a conventional method of adjusting a resistance value, in which a pair of electrodes 2a and 2b are formed on one surface of the PTC ceramic element 1 at a distance and one electrode 2c is formed on the other surface. Formed, electrode 2c
Is deleted by the width of x, and the resistance value is adjusted by reducing the area of the electrode 2c.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、前記従
来の方法によると、電極面積を減少させるためには、電
極2cを削除する必要があるために削除作業に手間がか
かり、その結果、PTCセラミック素子1が高価なもの
となり、コストを削減するにも限界があった。
However, according to the above-mentioned conventional method, it is necessary to remove the electrode 2c in order to reduce the electrode area, so that the removing work is troublesome and, as a result, the PTC ceramic element is required. 1 becomes expensive, and there is a limit in reducing the cost.

【0005】また、PTCセラミック素子の選別を抵抗
値で管理しても、抵抗値測定はせいぜい数V程度で行う
ため、実際に高電圧で使用する場合と特性が大きく違っ
ている場合がある。また、抵抗値がほぼ同じであっても
表面温度が異なる場合もある。
Even if the PTC ceramic elements are selected by resistance value, the resistance value is measured at about several V at most, so that the characteristics may differ greatly from those when actually used at high voltage. Further, the surface temperature may differ even if the resistance values are almost the same.

【0006】図9はPTCセラミック素子の抵抗ー温度
特性に及ぼす電圧の影響を示すグラフで、(1)〜
(3)の各電圧で特性に差があり、PTCセラミック素
子にバリスタ特性があり、電圧依存性をもっていること
が分かる。
FIG. 9 is a graph showing the effect of voltage on the resistance-temperature characteristic of a PTC ceramic element.
It can be seen that there is a difference in characteristics at each voltage of (3), the PTC ceramic element has varistor characteristics, and has voltage dependency.

【0007】このため、低電圧で測定した特性に基づい
て実際の高電圧で使用すると、電圧依存性による特性の
違いから、PTCセラミック素子が所定温度から過剰に
昇温することがあった。よって例えば、床暖房等に用い
た場合、火傷等の事故に至ることがあった。
Therefore, when the PTC ceramic element is used at an actual high voltage based on the characteristics measured at a low voltage, the PTC ceramic element may excessively rise from a predetermined temperature due to a difference in characteristics due to voltage dependence. Therefore, for example, when used for floor heating or the like, an accident such as a burn may occur.

【0008】そこで、本発明は、加熱能力が十分あり、
所定温度以上に異常昇温しない加熱特性が揃ったPTC
セラミックス素子を正確に選別及び製造する方法を提供
するものである。
Therefore, the present invention has a sufficient heating capacity,
PTC with uniform heating characteristics that does not abnormally raise temperature above a prescribed temperature
The present invention provides a method for accurately selecting and manufacturing ceramic elements.

【0009】[0009]

【課題を解決するための手段】本発明は、ある一定の比
較的放射係数が小さな条件下で通電した際、所定の表面
温度に対応する突入電流及び定常電流を上限値とし、そ
の上限値及び下限値を超えない突入電流及び定常電流を
有するPTCセラミック素子を選定することを特徴とす
るPTCセラミック素子の選別及びその製造方法であ
る。
SUMMARY OF THE INVENTION According to the present invention, when an electric current is applied under a condition where a certain radiation coefficient is relatively small, an inrush current and a steady current corresponding to a predetermined surface temperature are set as upper limits, and the upper limits and A PTC ceramic element is selected and a manufacturing method thereof is characterized in that a PTC ceramic element having an inrush current and a steady current which do not exceed a lower limit value is selected.

【0010】また、一方の面に間隔を隔てて形成された
一対の電極もしくは相対する一対の電極が形成されたP
TCセラミック素子において、さらに、PTCセラミッ
ク素子の一方の面に間隔を隔てて一対の電極が形成さ
れ、他方の面に一つの電極が形成されたPTCセラミッ
ク素子において、それぞれ突入電流が所定範囲を外れた
ものについては、前記他方の面に形成された電極に切断
溝を設けて突入電流の調整を行い、前記上限値を超えな
い突入電流を有するPTCセラミック素子を選定するこ
とにより所望のPTCセラミック素子を選別及び製造す
ることができる。
In addition, a pair of electrodes formed with a space on one surface or a pair of electrodes facing each other are formed on the surface P.
In the TC ceramic element, in which a pair of electrodes are formed on one surface of the PTC ceramic element with a space therebetween and one electrode is formed on the other surface, the inrush currents are out of the predetermined ranges. In the case of the above, the desired PTC ceramic element is obtained by providing a cutting groove in the electrode formed on the other surface to adjust the inrush current and selecting a PTC ceramic element having an inrush current not exceeding the upper limit value. Can be selected and manufactured.

【0011】前記切断溝は、他方の面の電極の相隣る二
辺を斜めに横切って三角形が形成されるようにして微調
整することができる。
The cutting groove can be finely adjusted so that a triangle is formed by diagonally crossing two adjacent sides of the electrode on the other surface.

【0012】[0012]

【発明の実施の形態】図1、図2及び図3はPTCセラ
ミック素子の斜視図で、図1に示すPTCセラミック素
子1は一方の面に一対の電極2a、2bが間隔を隔てて
形成され、他方の面には一つの電極2cが形成されたも
のである。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIGS. 1, 2 and 3 are perspective views of a PTC ceramic element. A PTC ceramic element 1 shown in FIG. 1 has a pair of electrodes 2a, 2b formed on one surface thereof at a distance. One electrode 2c is formed on the other surface.

【0013】図2に示すPTCセラミック素子1は、一
方の面に一対の電極2a、2bが間隔を隔てて形成され
ているが、他方の面には電極が形成されていないもので
ある。
In the PTC ceramic element 1 shown in FIG. 2, a pair of electrodes 2a and 2b are formed on one surface with a space therebetween, but no electrodes are formed on the other surface.

【0014】図3に示すPTCセラミック素子1は、両
面に電極2を形成したものである。
The PTC ceramic element 1 shown in FIG. 3 has electrodes 2 formed on both sides.

【0015】図4はPTCセラミック素子1を組み込ん
だパネルヒーターの測定装置の説明図で、放熱板6に電
極2a、2bを形成したPTCセラミック素子1を絶縁
板8を介して貼りつけ、交流200Vを通電して、抵抗
値、突入電流、定常電流、表面温度を測定した。
FIG. 4 is an explanatory view of a panel heater measuring device incorporating the PTC ceramic element 1, in which the PTC ceramic element 1 having electrodes 2a and 2b formed on the heat radiating plate 6 is attached via an insulating plate 8 and AC 200V. Then, the resistance value, the inrush current, the steady current, and the surface temperature were measured.

【0016】図5はPTCセラミック素子の時間ー電流
特性のグラフで、通電後急激に電流値が増加し、突入電
流に相当するピークに達した後、急激に電流値が減り、
やがて定常電流に落ち着く。
FIG. 5 is a graph of the time-current characteristics of the PTC ceramic element. The current value rapidly increases after energization, reaches a peak corresponding to the inrush current, and then rapidly decreases.
Eventually the steady current settles down.

【0017】なお、表面温度は、放熱板6に熱電対7を
取付け、断熱材5で押さえ閉塞状態で温度を測定した。
The surface temperature was measured by mounting a thermocouple 7 on the heat dissipation plate 6 and pressing the heat insulating material 5 to close the surface.

【0018】次に、PTCセラミック素子の突入電流調
整について説明すると、図6は切断溝を形成して突入電
流を調整したPTCセラミック素子の斜視図、図7は切
断溝形成中に後端部が破損したPTCセラミック素子の
斜視図、図8は本発明により切断溝を形成して突入電流
を微調整したPTCセラミック素子の斜視図で、図1に
示すPTCセラミック素子の突入電流を調整するため
に、電極2cに切断溝3を形成する。切断溝3を形成す
る位置xは、PTCセラミック素子毎に調整量と位置x
の関係を予め求めておき、それに基づいて行えばよい。
また、目標値に近い突入電流値のPTCセラミック素子
の電流を微調整する際、図6に示す切断溝の形成方法に
よると、xの幅が非常に小さくなり、そのまま切断溝を
入れると、図7のように素子1の縁が破損し、欠損部4
ができる場合がある。そこで、我々は種々検討した結
果、電極の所定幅xを削除せずとも、所定の位置に溝を
入れるだけで、電流調整が可能であるという知見を得
た。図8に示すように電極の相隣る二辺を斜めに横切っ
て三角形が形成されるようにし、yの幅を変化させるこ
とにより電流調整が可能である。なお、本発明による方
法では単に溝を構成するのみであること、また、yの幅
を大きくとることができることから、PTCセラミック
素子1の破損を招くようなことが少ない。
Next, the inrush current adjustment of the PTC ceramic element will be described. FIG. 6 is a perspective view of the PTC ceramic element in which a cutting groove is formed to adjust the inrush current, and FIG. 7 shows a rear end portion during the formation of the cutting groove. FIG. 8 is a perspective view of a damaged PTC ceramic element, and FIG. 8 is a perspective view of a PTC ceramic element in which a cutting groove is formed according to the present invention to finely adjust the inrush current. In order to adjust the inrush current of the PTC ceramic element shown in FIG. The cutting groove 3 is formed in the electrode 2c. The position x at which the cutting groove 3 is formed is the adjustment amount and the position x for each PTC ceramic element.
The relationship may be obtained in advance, and it may be performed based on that.
Further, when finely adjusting the current of the PTC ceramic element having an inrush current value close to the target value, the width of x becomes extremely small according to the method of forming the cutting groove shown in FIG. As shown in 7, the edge of the element 1 is damaged and the defect 4
May be possible. Therefore, as a result of various studies, we have found that the current can be adjusted only by forming a groove at a predetermined position without deleting the predetermined width x of the electrode. As shown in FIG. 8, the current can be adjusted by changing the width of y such that a triangle is formed by diagonally crossing two adjacent sides of the electrode. In the method according to the present invention, since the groove is simply formed and the width of y can be increased, the PTC ceramic element 1 is less likely to be damaged.

【0019】また、切断溝は、きわめて微小な電流値調
整を行うため、一方の面に間隔を隔てて形成される一対
の電極直下にあたる他方の面に形成された電極に設ける
ほうが他の部分に切断溝を形成させるよりも電流値の変
化量が小さいので精度良く調整するためには望ましい。
In addition, since the cutting groove is used to adjust the current value extremely minutely, it is better to provide the cutting groove on the other part immediately below the pair of electrodes formed on one surface with a space between the other part. Since the amount of change in the current value is smaller than that in forming the cutting groove, it is desirable for accurate adjustment.

【0020】さらに、ヒータユニット全体の形状を考慮
し、PTCセラミック素子の形状、電極の形態に制約が
ある場合には、図11あるいは図12のように電極層2
に切断溝3を入れ、それぞれ2bと2b′、2、2′の
ように分断することも可能である。また、図1に示すセ
ラミック素子の電極の形態についても、図13に示すよ
うに電極層2に切断溝3を両面に対して入れ、それぞれ
2bと2b′、2と2c′のように分断することも可能
である。
Further, when the shape of the PTC ceramic element and the shape of the electrode are restricted in consideration of the shape of the entire heater unit, the electrode layer 2 is formed as shown in FIG. 11 or 12.
It is also possible to insert a cutting groove 3 into the groove and divide it into 2b and 2b ', 2 and 2', respectively. Also, regarding the form of the electrodes of the ceramic element shown in FIG. 1, as shown in FIG. 13, cutting grooves 3 are formed on both sides of the electrode layer 2 and divided as 2b and 2b ′ and 2 and 2c ′, respectively. It is also possible.

【0021】[0021]

【実施例】【Example】

実施例1 各種の抵抗値を有するPTCセラミック素子について測
定した結果は表1のとおりである。
Example 1 Table 1 shows the results of measurement of PTC ceramic elements having various resistance values.

【0022】[0022]

【表1】 表1において、合否の判定は、表面温度70°C以下を
合格とした。
[Table 1] In Table 1, the pass / fail judgment was passed when the surface temperature was 70 ° C. or lower.

【0023】また、表面温度が60°Cを下回ると暖房
能力が小さくなりすぎるため、表面温度60°C以上を
合格とした。
If the surface temperature is lower than 60 ° C, the heating capacity becomes too small. Therefore, the surface temperature of 60 ° C or higher was passed.

【0024】表1から明らかなとおり、突入電流が表面
温度70°Cでの突入電流46mA以下であるNo.8
及びNo.10は、表面温度が70°C以上になること
はないから、選定したPTCセラミック素子の突入電流
が70°Cのそれを超えないかぎり、70°Cを超える
表面温度にならないので、選定に信頼性が持てる。な
お、表1中の抵抗値は1Vの電圧下で測定した値を示し
ているが、従来から行われている抵抗値による選定を行
うと、抵抗値と表面温度との間に正確な相関関係がない
ために、所定温度以上に昇温する場合もあり、抵抗値に
よるPTCセラミック素子の選定は信頼性に欠けること
が分かる。
As is clear from Table 1, No. 1 having an inrush current of 46 mA or less at a surface temperature of 70 ° C. 8
And No. No. 10 has a surface temperature of no more than 70 ° C, so unless the inrush current of the selected PTC ceramic element exceeds that of 70 ° C, the surface temperature does not exceed 70 ° C. I can have sex. The resistance value in Table 1 shows the value measured under a voltage of 1 V. However, if the resistance value is selected conventionally, an accurate correlation between the resistance value and the surface temperature is obtained. Therefore, there is a case where the temperature rises above a predetermined temperature in some cases, and it is understood that the selection of the PTC ceramic element based on the resistance value lacks reliability.

【0025】一方、No.11及びNo.12は突入電
流が範囲に入っているものの定常電流が13mA未満で
あり、表面温度が60°C以下であり、異常昇温はない
もの、暖房能力がないことが分かる。
On the other hand, No. 11 and No. It can be seen that in No. 12, although the inrush current is within the range, the steady current is less than 13 mA, the surface temperature is 60 ° C. or less, there is no abnormal temperature rise, and there is no heating capacity.

【0026】さらに、No.13のように組成のバラツ
キの影響によって、違うキュリー点と思われるものにつ
いては、定常電流が大きくなって、表面温度も79°C
と高くなっている。このようなものは全体から見ると数
量的には少ないが、定常電流から判断して除外される。
Further, No. For those that seem to have different Curie points due to the effects of compositional variations such as No. 13, the steady-state current was large and the surface temperature was 79 ° C.
It is high. Although such a thing is small in number from the whole, it is excluded by judging from the steady current.

【0027】実施例2 図1に示す15mm×25mm×2.5mmのPTCセ
ラミック素子1に200Vを通電したところ、突入電流
は70mAであった。この素子を図6に示すように、x
=7mmのところに切断溝を設け、通電したところ、突
入電流は表面温度70°Cの突入電流46mA以下の4
5mAとなり、表面温度は、68°Cであり、70°C
を超えることはなかった。
Example 2 When 200 V was applied to the 15 mm × 25 mm × 2.5 mm PTC ceramic element 1 shown in FIG. 1, the inrush current was 70 mA. This element is shown in FIG.
= 7 mm, a cutting groove was provided, and when energized, the inrush current was 4 mA below the inrush current of 46 mA at a surface temperature of 70 ° C.
5mA, surface temperature is 68 ° C, 70 ° C
Never exceeded.

【0028】実施例3 実施例2と同様にして、PTCセラミック素子1に20
0Vを通電したところ、突入電流は51mAであった。
この素子を図8に示すようにy=9mmの所に斜めの切
断溝を設け、通電すると突入電流は43mAとなり、表
面温度は、65°Cであり、70°Cを超えることはな
かった。
Example 3 In the same manner as in Example 2, 20 PTC ceramic elements 1
When an electric current of 0 V was applied, the inrush current was 51 mA.
When this device was provided with an oblique cutting groove at a position of y = 9 mm as shown in FIG. 8 and energized, the inrush current was 43 mA, and the surface temperature was 65 ° C. and did not exceed 70 ° C.

【0029】[0029]

【発明の効果】本発明の効果は、次のとおりである。The effects of the present invention are as follows.

【0030】(1) 本発明は、従来の抵抗値に代えて
突入電流を選別の基準とするのでPTCセラミック素子
が正確に選別でき、異常昇温しない加熱特性が揃ったP
TCセラミック素子が得られ、従来の抵抗値で選定した
場合に生じる所定温度以上に異常昇温するPTCセラミ
ック素子がなくなる。
(1) In the present invention, the inrush current is used as a reference for selection instead of the conventional resistance value, so that the PTC ceramic element can be accurately selected, and the heating characteristics that prevent abnormal temperature rise are consistent with P.
A TC ceramic element is obtained, and there is no PTC ceramic element that abnormally rises in temperature to a predetermined temperature or higher, which occurs when the conventional resistance value is selected.

【0031】(2) 本発明は、突入電流の調整が電極
に切断溝を形成するだけであるから、従来の抵抗値調整
のように電極を剥がすのと異なり、手間がかからない。
また、微調整の場合、斜めの切断溝を形成するので、P
TCセラミック素子の端部が欠損することなく簡単にで
きる。
(2) In the present invention, the adjustment of the rush current only forms the cut groove in the electrode, and therefore, unlike the conventional resistance value adjustment in which the electrode is peeled off, no labor is required.
Also, in the case of fine adjustment, since an oblique cutting groove is formed, P
This can be easily done without damaging the end of the TC ceramic element.

【図面の簡単な説明】[Brief description of drawings]

【図1】PTCセラミック素子の斜視図。FIG. 1 is a perspective view of a PTC ceramic element.

【図2】PTCセラミック素子の斜視図。FIG. 2 is a perspective view of a PTC ceramic element.

【図3】PTCセラミック素子の斜視図。FIG. 3 is a perspective view of a PTC ceramic element.

【図4】PTCセラミック素子を組み込んだパネルヒー
ターの測定装置の説明図。
FIG. 4 is an explanatory diagram of a panel heater measuring device incorporating a PTC ceramic element.

【図5】PTCセラミック素子の時間ー電流特性のグラ
フ。
FIG. 5 is a graph of time-current characteristics of a PTC ceramic device.

【図6】本発明により切断溝を形成して突入電流を調整
した図1記載のPTCセラミック素子の斜視図。
6 is a perspective view of the PTC ceramic element shown in FIG. 1 in which a cut groove is formed according to the present invention to adjust an inrush current.

【図7】切断溝形成中に端部が破損したPTCセラミッ
ク素子の斜視図。
FIG. 7 is a perspective view of a PTC ceramic element whose end portion is damaged during formation of a cutting groove.

【図8】本発明により切断溝を形成して突入電流を微調
整したPTCセラミック素子の斜視図。
FIG. 8 is a perspective view of a PTC ceramic element in which a cutting groove is formed according to the present invention to finely adjust an inrush current.

【図9】PTCセラミック素子の抵抗ー温度特性に及ぼ
す電圧の影響を示すグラフ。
FIG. 9 is a graph showing the effect of voltage on the resistance-temperature characteristics of a PTC ceramic element.

【図10】従来の抵抗値の調整方法の説明図。FIG. 10 is an explanatory diagram of a conventional resistance value adjusting method.

【図11】本発明により切断溝を形成して突入電流を微
調整した図2記載のPTCセラミック素子の斜視図。
11 is a perspective view of the PTC ceramic element shown in FIG. 2 in which a cutting groove is formed according to the present invention to finely adjust the inrush current.

【図12】本発明により切断溝を形成して突入電流を微
調整した図3記載のPTCセラミック素子の斜視図。
FIG. 12 is a perspective view of the PTC ceramic element shown in FIG. 3 in which a cutting groove is formed according to the present invention to finely adjust the inrush current.

【図13】本発明により両側に切断溝を形成して突入電
流を微調整した図1記載のPTCセラミック素子の斜視
図。
13 is a perspective view of the PTC ceramic element shown in FIG. 1 in which cutting grooves are formed on both sides according to the present invention to finely adjust an inrush current.

【符号の説明】[Explanation of symbols]

1 PTCセラミック素子、 2、2′、2a、2b、
2b′、2c 電極、3 切断溝、 4 欠損部、 5
断熱材、 6 放熱板、 7熱電対、 8絶縁板
1 PTC ceramic element, 2, 2 ', 2a, 2b,
2b ', 2c electrodes, 3 cutting grooves, 4 missing parts, 5
Heat insulating material, 6 heat sink, 7 thermocouple, 8 insulating board

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 所定の表面温度に対応する突入電流を設
定し、前記設定値の範囲を超えない突入電流を有するP
TCセラミック素子を選定することを特徴とする加熱特
性がほぼ同一のPTCセラミック素子の選別及びその製
造方法。
1. A P having a rush current corresponding to a predetermined surface temperature and having a rush current which does not exceed the range of the set value.
A method of selecting and manufacturing PTC ceramic elements having substantially the same heating characteristics, which is characterized by selecting TC ceramic elements.
【請求項2】 所定の定常電流範囲にあるPTCセラミ
ック素子を選定することを特徴とする請求項1記載のP
TCセラミック素子の選別方法。
2. The P according to claim 1, wherein a PTC ceramic element within a predetermined steady current range is selected.
TC ceramic element selection method.
【請求項3】 一方の面に間隔を隔てて形成された一対
の電極、もしくは相対する面に一対の電極が形成された
PTCセラミック素子において、両方もしくはもう一方
の電極に切断溝を設けて突入電流及び定常電流の調整を
行い、設定値の範囲にある突入電流及び定常電流を有す
るPTCセラミック素子を選定することを特徴とする請
求項1又は2記載のPTCセラミック素子選別及びその
製造方法。
3. A PTC ceramic element having a pair of electrodes formed on one surface at a distance, or a pair of electrodes formed on opposite surfaces, with both or the other electrode provided with a cutting groove and protruding. The PTC ceramic element selection and the manufacturing method thereof according to claim 1 or 2, wherein the PTC ceramic element having an inrush current and a steady current within a set value range is selected by adjusting the current and the steady current.
【請求項4】 一方の面に間隔を隔てて一対の電極が形
成され、他方の面に一つの電極が形成されたPTCセラ
ミック素子において、前記他方の面に形成された電極に
切断溝を設けて突入電流及び定常電流の調整を行い、設
定値の範囲を超えない突入電流及び定常電流を有するP
TCセラミック素子を選定することを特徴とする請求項
1又は2記載のPTCセラミック素子選別及びその製造
方法。
4. A PTC ceramic element having a pair of electrodes formed on one surface at a distance and one electrode formed on the other surface, wherein a cut groove is provided in the electrode formed on the other surface. P has a rush current and a steady current that do not exceed the set value range by adjusting the rush current and the steady current.
The PTC ceramic element selection and manufacturing method thereof according to claim 1 or 2, wherein a TC ceramic element is selected.
【請求項5】 前記切断溝は一方の面に間隔を隔てて形
成される一対の電極直下にあたる他方の面に形成された
電極に設けることを特徴とする請求項1、2又は4記載
のPTCセラミック素子の選別及びその製造方法。
5. The PTC according to claim 1, 2 or 4, wherein the cut groove is provided in an electrode formed on the other surface immediately below the pair of electrodes formed on one surface with a space therebetween. Ceramic element selection and manufacturing method thereof.
【請求項6】 前記切断溝は他方の面の電極の相隣る二
辺を斜めに横切って三角形が形成されるように設けられ
ることを特徴とする請求項1、2、3、4又は5記載の
PTCセラミック素子の選別及びその製造方法。
6. The cutting groove is provided so that a triangle is formed by diagonally crossing two adjacent sides of an electrode on the other surface. A method for selecting a PTC ceramic element described above and a method for manufacturing the same.
JP07243444A 1995-09-21 1995-09-21 Selection of PTC ceramic element and method of manufacturing the same Expired - Fee Related JP3121531B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP07243444A JP3121531B2 (en) 1995-09-21 1995-09-21 Selection of PTC ceramic element and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07243444A JP3121531B2 (en) 1995-09-21 1995-09-21 Selection of PTC ceramic element and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JPH0992504A true JPH0992504A (en) 1997-04-04
JP3121531B2 JP3121531B2 (en) 2001-01-09

Family

ID=17103975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP07243444A Expired - Fee Related JP3121531B2 (en) 1995-09-21 1995-09-21 Selection of PTC ceramic element and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JP3121531B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005081270A1 (en) * 2004-02-25 2005-09-01 Murata Manufacturing Co.,Ltd. Ptc element screening method
JP2005243827A (en) * 2004-02-25 2005-09-08 Murata Mfg Co Ltd Screening method of ptc element
JP2005243826A (en) * 2004-02-25 2005-09-08 Murata Mfg Co Ltd Screening method of ptc element

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005081270A1 (en) * 2004-02-25 2005-09-01 Murata Manufacturing Co.,Ltd. Ptc element screening method
JP2005243827A (en) * 2004-02-25 2005-09-08 Murata Mfg Co Ltd Screening method of ptc element
JP2005243826A (en) * 2004-02-25 2005-09-08 Murata Mfg Co Ltd Screening method of ptc element
US7605352B2 (en) 2004-02-25 2009-10-20 Murata Manufacturing Co., Ltd. Method for sorting positive temperature coefficient (PTC) elements
JP4501458B2 (en) * 2004-02-25 2010-07-14 株式会社村田製作所 PTC element selection method

Also Published As

Publication number Publication date
JP3121531B2 (en) 2001-01-09

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