JPH097956A - Electric resistance heater for heat treating semiconductor - Google Patents
Electric resistance heater for heat treating semiconductorInfo
- Publication number
- JPH097956A JPH097956A JP7171591A JP17159195A JPH097956A JP H097956 A JPH097956 A JP H097956A JP 7171591 A JP7171591 A JP 7171591A JP 17159195 A JP17159195 A JP 17159195A JP H097956 A JPH097956 A JP H097956A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- silicon carbide
- base material
- carbide film
- heating element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Resistance Heating (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体熱処理用装置特に
エピタキシャル成長装置に用いられる発熱体に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor heat treatment apparatus, and more particularly to a heating element used in an epitaxial growth apparatus.
【０００２】[0002]
【従来の技術】従来から使用されている気相成長装置
は、例えば特開平５−１５２２０７号に示されている。
ウエハはウエハ保持部材で支持して、該ウエハ保持部材
の下方に配置する発熱体により加熱して、ウエハ表面に
気相成長膜を形成する。2. Description of the Related Art A conventional vapor phase growth apparatus is disclosed in, for example, Japanese Unexamined Patent Publication No. 5-152207.
The wafer is supported by a wafer holding member and heated by a heating element arranged below the wafer holding member to form a vapor phase growth film on the wafer surface.
【０００３】上記の気相成長装置においては、ベースの
下面に上方に向かって伸びる中空円筒体が取付けられ、
その上端に発熱体支えが取付けられており、その上方に
は皿状の反射板が配置され、その内部に発熱体を収容す
ると共に上端に均熱板が取付けられている。上記皿状の
反射板の上端は上記均熱板の上方に位置し、この上端に
はリング状のサセプタが嵌着されている。サセプタの内
周側にはザグリが形成され、この内にウエハが配置され
る。反応室内は５０〜４００Ｔｏｒｒの減圧雰囲気が形
成され、ガス導入口からジクロルシラン等の原料ガスと
水素等のキャリアガスが多量に導入され、気相成長が行
われる。ウエハ温度は１１５０℃程度に加熱される。In the above vapor phase growth apparatus, a hollow cylindrical body extending upward is attached to the lower surface of the base,
A heating element support is attached to the upper end thereof, and a dish-shaped reflecting plate is arranged above the heating element support, and the heating element is accommodated inside and a soaking plate is attached to the upper end. The upper end of the dish-shaped reflection plate is located above the heat equalizing plate, and a ring-shaped susceptor is fitted on the upper end. A counterbore is formed on the inner peripheral side of the susceptor, and a wafer is placed in this. A reduced pressure atmosphere of 50 to 400 Torr is formed in the reaction chamber, and a large amount of a raw material gas such as dichlorosilane and a carrier gas such as hydrogen are introduced from the gas introduction port to perform vapor phase growth. The wafer temperature is heated to about 1150 ° C.
【０００４】上記のような従来の気相成長装置において
は、発熱体として、高純度化処理された炭素材料あるい
はこの炭素材料の表面に炭化珪素質膜をコーティングし
た材料が用いられていた。In the conventional vapor phase growth apparatus as described above, as the heating element, a highly purified carbon material or a material obtained by coating the surface of this carbon material with a silicon carbide film is used.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、このよ
うな気相成長装置においても、大量生産性が重要課題で
あり、そのためにウエハの急熱、急冷が加速され、ま
た、製造過程において処理するウエハの挿入間隔が短縮
化されてきている。However, also in such a vapor phase growth apparatus, mass productivity is an important issue, and therefore rapid heating and quenching of wafers are accelerated, and wafers to be processed in the manufacturing process. Insertion intervals have been shortened.
【０００６】従って、従来使用されていた炭化珪素質膜
をコーティングした炭素からなる発熱体では、最近の急
熱急冷の過酷な使用条件下で熱膨張の違いから使用時の
炭化珪素質膜と炭素基材との強度が重要になってきた。
炭化珪素質膜の強度が５０〜４００ＭＰａで炭素基材の
強度が２０〜６０ＭＰａと少ない為に、高温の過酷な使
用条件下で基材から膜にクラックが発生しやすくなり、
充分な寿命が確保できなかった。Therefore, in the conventional heating element made of carbon coated with a silicon carbide film, the silicon carbide film and the carbon at the time of use are different from each other due to the difference in thermal expansion under the severe conditions of recent rapid heating and quenching. The strength with the substrate has become important.
Since the strength of the silicon carbide film is as low as 50 to 400 MPa and the strength of the carbon base material is as low as 20 to 60 MPa, cracks easily occur in the base material under high temperature and severe use conditions.
We could not secure a sufficient life.
【０００７】本発明の目的は、使用条件下で十分な強度
を確保できる半導体熱処理用電気抵抗発熱体を提供する
ことである。An object of the present invention is to provide an electric resistance heating element for semiconductor heat treatment, which can secure sufficient strength under use conditions.
【０００８】[0008]
【課題を解決するための手段】本発明は、ウエハをウエ
ハ保持部材で支持し、ウエハを加熱して、ウエハ表面に
気相成長膜を形成する気相成長装置において、ウエハを
加熱するための発熱体が、炭素基材と、その表面に設け
た炭化珪素質膜からなり、炭化珪素質膜の熱膨張係数よ
りも炭素基材の熱膨張係数を高くし、その炭素基材の熱
膨張係数を４．３〜６．０×１０-6／℃（２０℃〜４５
０℃）にすることを特徴とする半導体熱処理用電気抵抗
発熱体を要旨とする。According to the present invention, there is provided a vapor phase growth apparatus for supporting a wafer by a wafer holding member and heating the wafer to form a vapor phase growth film on the wafer surface. The heating element is composed of a carbon base material and a silicon carbide based film provided on the surface of the carbon base material, and the thermal expansion coefficient of the carbon base material is made higher than that of the silicon carbide based film. 4.3 to 6.0 × 10 −6 / ° C. (20 ° C. to 45 ° C.)
The gist is an electric resistance heating element for semiconductor heat treatment, which is characterized in that the temperature is 0 ° C.).
【０００９】好ましくは、炭化珪素質膜がβ−ＳｉＣ結
晶粒子の中にα−ＳｉＣを筋状に介在させた複合組織の
ものである。Preferably, the silicon carbide film has a complex structure in which α-SiC intersperses in β-SiC crystal grains in a streak pattern.
【００１０】[0010]
【実施例】本発明による発熱体は、ウエハをウエハ保持
部材で支持し、ウエハ保持部材の下方に配置する発熱体
によりウエハを加熱して、ウエハ表面に気相成長膜を形
成する気相成長装置に用いる。発熱体が、炭素基材と、
その表面に設けた炭化珪素質膜からなる。DESCRIPTION OF THE PREFERRED EMBODIMENTS A heating element according to the present invention is a vapor phase growth method in which a wafer is supported by a wafer holding member, and the heating element placed below the wafer holding member heats the wafer to form a vapor growth film on the wafer surface. Used in equipment. The heating element is a carbon base material,
It is made of a silicon carbide film provided on the surface thereof.
【００１１】発熱体は、熱膨張係数が４．３〜６．０×
１０-6／℃（２０℃〜４５０℃）である等方性炭素を基
材として使用し、その炭素基材の表面にＣＶＤコーティ
ング法により炭化珪素質膜を形成し、炭素基材が炭化珪
素質膜で覆われている。炭化珪素質膜の熱膨張係よりも
炭素基材の熱膨張係数を高くする。これにより、膜に残
留応力が残るようになり、高温の過酷な使用条件下で充
分な寿命が確保できる。なお、本発明の炭化珪素質膜の
熱膨張係数は、３．８×１０-6／℃（２０℃〜４５０
℃）である。The heating element has a coefficient of thermal expansion of 4.3 to 6.0 ×.
Isotropic carbon having a temperature of 10 −6 / ° C. (20 ° C. to 450 ° C.) is used as a base material, and a silicon carbide film is formed on the surface of the carbon base material by a CVD coating method. It is covered with a membrane. The coefficient of thermal expansion of the carbon base material is made higher than the coefficient of thermal expansion of the silicon carbide film. As a result, residual stress remains in the film, and a sufficient life can be secured under high temperature and severe use conditions. The coefficient of thermal expansion of the silicon carbide film of the present invention is 3.8 × 10 −6 / ° C. (20 ° C. to 450 ° C.).
° C).
【００１２】炭化珪素質膜は、β−ＳｉＣとα−ＳｉＣ
の複合組織であって、かつ少量のα−ＳｉＣがβ−Ｓｉ
Ｃの中に点在している状態にする。たとえば、α−Ｓｉ
Ｃは炭化珪素質膜全体の中で０．０１〜５容量％、好ま
しくは約０．１〜２容量％を占めるようにする。The silicon carbide film is composed of β-SiC and α-SiC.
And a small amount of α-SiC is β-Si
The state is scattered in C. For example, α-Si
C accounts for 0.01 to 5% by volume, preferably about 0.1 to 2% by volume, of the entire silicon carbide film.
【００１３】図２は、炭化珪素質膜のＸ線回析スペクト
ルを示しており、粉末のほとんどがβ−ＳｉＣ（白丸で
示している）であるが、トレース程度のα−ＳｉＣ（黒
丸で示す６Ｈ及び１５Ｒ）が存在する形で検出されてい
る。FIG. 2 shows an X-ray diffraction spectrum of the silicon carbide film, and most of the powder is β-SiC (shown by white circles), but α-SiC of trace level (shown by black circles). 6H and 15R) have been detected.
【００１４】図３は結晶構造を示す走査透過電子顕微鏡
像で、筋状の黒線部分がα−ＳｉＣ結晶である。FIG. 3 is a scanning transmission electron microscope image showing the crystal structure. The streak black line portion is the α-SiC crystal.
【００１５】図４は結晶構造を示すＴＥＭ高分解能像で
ある。横縞部分がα−ＳｉＣ結晶である。FIG. 4 is a TEM high-resolution image showing the crystal structure. The horizontal stripes are α-SiC crystals.
【００１６】図５は結晶構造を示す制限視野電子回析像
である。白く流れる線の存在がα−ＳｉＣ結晶を示す。FIG. 5 is a selected area electron diffraction image showing the crystal structure. The presence of white flowing lines indicates α-SiC crystals.
【００１７】図６は約３０００倍のＳｉＣ膜の模式図で
ある。FIG. 6 is a schematic view of an about 3000 times SiC film.
【００１８】このような結晶構成にすることにより高温
における変形が少なくなり、耐浸食性が向上するなど高
温安定性が向上する。By adopting such a crystal structure, deformation at high temperature is reduced, erosion resistance is improved, and high temperature stability is improved.
【００１９】炭化珪素質膜は炉内部を高純度処理しか
つ、従来の温度（たとえば約１３００℃）よりも高温
（たとえば１６００〜１９００℃）でＣＶＤコーティン
グ法により形成する。The silicon carbide film is formed by high-purity treatment inside the furnace and by a CVD coating method at a temperature (for example, 1600 to 1900 ° C.) higher than the conventional temperature (for example, about 1300 ° C.).
【００２０】本発明の発熱体は、炭化珪素質膜の厚みを
４５〜３００μｍにするのが望ましい。In the heating element of the present invention, it is desirable that the silicon carbide film has a thickness of 45 to 300 μm.
【００２１】ＣＶＤコーティング法により形成された結
晶炭化珪素質膜が前述のようにβ−ＳｉＣとα−ＳｉＣ
の特別な複合組織で構成されていて、１４００℃以上の
非酸化性雰囲気においてβ−ＳｉＣ結晶の昇華を抑制で
き高寿命となる。As described above, the crystalline silicon carbide film formed by the CVD coating method has β-SiC and α-SiC.
It is composed of a special composite structure of 1), and the sublimation of the β-SiC crystal can be suppressed in the non-oxidizing atmosphere at 1400 ° C. or higher, and the life becomes long.
【００２２】図示例 以下に本発明の図示例について説明する。[0022] For the illustrated example of the present invention will illustrated example will be described.
【００２３】図１において、ベース１０の下面には上方
に向かって伸びる中空円筒体１１が取付けられ、その上
端にヒータ支え１２が取付けられている。ヒータ支え１
２には絶縁棒１３、反射板１４及び絶縁棒１５を介して
ヒータ１６が取付けられている。中空円筒体１１の下端
はフタ１８によって閉じられ、中空円筒体１１の内部に
はフタ１８を貫通してヒータ１６に接続された給電用配
線１７が設けられている。In FIG. 1, a hollow cylindrical body 11 extending upward is attached to the lower surface of the base 10, and a heater support 12 is attached to the upper end thereof. Heater support 1
A heater 16 is attached to 2 via an insulating rod 13, a reflector 14 and an insulating rod 15. The lower end of the hollow cylindrical body 11 is closed by a lid 18, and inside the hollow cylindrical body 11, a power supply wiring 17 penetrating the lid 18 and connected to a heater 16 is provided.
【００２４】中空円筒体１１の周囲を囲むように中空回
転軸２０が設けられ、中空回転軸２０はベアリング２１
により中空円筒体１１と無関係に回転自在にベース１０
に取付けられている。中空回転軸２０にはプーリ２２が
取付けられ、ベルト２３により図示しないモータにより
回転を与えられるようになっている。A hollow rotary shaft 20 is provided so as to surround the hollow cylindrical body 11, and the hollow rotary shaft 20 has a bearing 21.
Allows the base 10 to rotate freely regardless of the hollow cylindrical body 11.
Mounted on A pulley 22 is attached to the hollow rotary shaft 20, and is rotated by a belt 23 by a motor (not shown).
【００２５】中空回転軸２０の上端は、一部のみを示す
ベルジャ２４によってベース１０の上面上方に形成され
る反応室２５内に伸び、その上端にはキー２６を介して
炭素製の支持円盤２７が固着されている。支持円盤２７
には石英ガラス、炭素又はセラミックス製の支持リング
２８が支持円盤２７と一体的に回転可能に取付けられて
いる。The upper end of the hollow rotary shaft 20 extends into a reaction chamber 25 formed above the upper surface of the base 10 by a bell jar 24 showing only a part, and the upper end of the hollow support shaft 27 is made of carbon through a key 26. Is stuck. Support disk 27
A support ring 28 made of quartz glass, carbon, or ceramics is rotatably attached to the support disk 27 integrally with the support disk 27.
【００２６】支持リング２８は、ヒータ支え１２、反射
板１４及びヒータ１６の外周を囲んで、ヒータ１６より
上方へ伸びている。支持リング２８の内周面の上方寄り
の途中には段部２９が形成され、段部２９に加熱板３０
が嵌着されている。加熱板３０はヒータ１６と間隔を置
いてほぼ平行に配置され、ヒータ１６に非接触で加熱さ
れるようになっている。The support ring 28 surrounds the outer periphery of the heater support 12, the reflection plate 14 and the heater 16 and extends above the heater 16. A step 29 is formed in the upper part of the inner peripheral surface of the support ring 28, and the heating plate 30 is formed on the step 29.
Is fitted. The heating plate 30 is arranged substantially in parallel with the heater 16 with a space therebetween, and is heated in a non-contact manner with the heater 16.
【００２７】支持リング２８の上端には段部３１が形成
され、段部３１にリング状のウエハ保持板３２が嵌着さ
れ、ウエハ保持板３２の上面内周寄りに形成された段部
３３内にウエハＷを保持するようになっている。ウエハ
保持板３２に支持されたウエハＷは、加熱板３０と好ま
しくは３ｍｍ以上の所定の間隔Ｃを有するように置かれ
る。A step portion 31 is formed on the upper end of the support ring 28, and a ring-shaped wafer holding plate 32 is fitted in the step portion 31, and inside a step portion 33 formed near the inner circumference of the upper surface of the wafer holding plate 32. The wafer W is held on the wafer. The wafer W supported by the wafer holding plate 32 is placed so as to have a predetermined distance C from the heating plate 30 which is preferably 3 mm or more.
【００２８】支持リング２８の外周には所定の隙間をも
って円筒状の保温筒４０が同心状に配置されている。A cylindrical heat retaining cylinder 40 is concentrically arranged on the outer periphery of the support ring 28 with a predetermined gap.
【００２９】次いで前述の気相成長装置の作用について
説明する。Next, the operation of the above vapor phase growth apparatus will be described.
【００３０】ヒータ１６に給電し、加熱板３０を加熱す
ると共に、中空回転軸２０を回転させ、加熱板３０、ウ
エハ保持板３２及びウエハＷを回転させる。ウエハＷと
ウエハ保持板３２は加熱板３０によって加熱される。Power is supplied to the heater 16 to heat the heating plate 30, and the hollow rotary shaft 20 is rotated to rotate the heating plate 30, the wafer holding plate 32, and the wafer W. The wafer W and the wafer holding plate 32 are heated by the heating plate 30.
【００３１】ウエハ保持板３２は、間隔Ｃを所定値に保
つようにウエハＷを支持すると共に、加熱板３０によっ
て加熱され、ウエハＷの外周を加熱して該外周の温度低
下を抑え、ウエハＷの中心から外周までの全域にわた
り、均一な温度分布とする役目を有している。The wafer holding plate 32 supports the wafer W so as to keep the interval C at a predetermined value, and is heated by the heating plate 30 to heat the outer circumference of the wafer W to suppress the temperature decrease of the outer circumference. Has the role of providing a uniform temperature distribution from the center to the outer periphery.
【００３２】[0032]
【発明の効果】ヒータが、前述のような特別な発熱体で
形成されていると、次のような効果が得られる。すなわ
ち、炭素基材の表面に形成した炭化珪素質膜の強度が顕
著である。とくに高温の使用条件下で膜の強度が安定し
ており、粒子の形状が乱されない。特に渦巻形状等の複
雑な形状の場合に効果がある。膜形成時の条件を適切に
選択して気相成長の条件下で炭化珪素質膜に所望の残留
応力が残るようにすると、強度がさらに大となる。膜に
残留応力が残るようになり、高温の過酷な使用条件下で
充分な寿命が確保できる。When the heater is formed of the special heating element as described above, the following effects can be obtained. That is, the strength of the silicon carbide film formed on the surface of the carbon substrate is remarkable. In particular, the strength of the film is stable under high temperature use conditions, and the shape of the particles is not disturbed. It is particularly effective in the case of a complicated shape such as a spiral shape. Strength is further increased by appropriately selecting the conditions during film formation so that the desired residual stress remains in the silicon carbide film under the conditions of vapor phase growth. Residual stress remains in the film, and a sufficient life can be secured under high temperature and severe use conditions.
【図１】本発明の第１実施例を示す図。FIG. 1 is a diagram showing a first embodiment of the present invention.
【図２】β−ＳｉＣ中にα−ＳｉＣが点在している状態
を示すＸ線強度スペクトルのグラフ。FIG. 2 is an X-ray intensity spectrum graph showing a state in which α-SiC is scattered in β-SiC.
【図３】結晶構造を示す走査透過電子顕微鏡像である。FIG. 3 is a scanning transmission electron microscope image showing a crystal structure.
【図４】結晶構造を示すＴＥＭ高分解能像である。FIG. 4 is a TEM high-resolution image showing a crystal structure.
【図５】結晶構造を示す制限視野電子回析像である。FIG. 5 is a selected area electron diffraction image showing a crystal structure.
【図６】約３０００倍のＳｉＣ膜の模式図である。FIG. 6 is a schematic view of a SiC film having a magnification of about 3000 times.
１０ ベース １１ 中空円筒体 １２ ヒータ支え １３，１５ 絶縁棒 １４ 反射板 １６ ヒータ １７ 給電用配線 １８ フタ ２０ 中空回転軸 ２１ ベアリング ２２ プーリ ２３ ベルト ２４ ベルジャ ２５ 反応室 ２７ 支持円盤 ２８ 支持リング ２９ 段部 ３０ 加熱板 ３１，３３ 段部 ３２ ウエハ保持板 ４０ 保温筒 Ｗ ウエハ 10 Base 11 Hollow Cylindrical Body 12 Heater Support 13, 15 Insulating Rod 14 Reflector 16 Heater 17 Power Supply Wiring 18 Lid 20 Hollow Rotating Shaft 21 Bearing 22 Pulley 23 Belt 24 Belger 25 Reaction Chamber 27 Support Disk 28 Support Ring 29 Step Section 30 Heating plate 31, 33 Step portion 32 Wafer holding plate 40 Insulating cylinder W wafer
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成７年６月３０日[Submission date] June 30, 1995
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１０[Correction target item name] 0010
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００１０】[0010]
【実施例】本発明による発熱体は、ウエハをウエハ保持
部材で支持し、ウエハ保持部材の下方に配置する発熱体
によりウエハを加熱して、ウエハ表面に気相成長膜を形
成する気相成長装置に用いる。発熱体は、炭素基材と、
その表面に設けた炭化珪素質膜からなる。炭化珪素質膜
の熱膨張係数よりも炭素基材の熱膨張係数を高くする。
炭素基材の熱膨張係数は、４．３〜６．０×１０−６／
℃（２０℃〜４５０℃）で、炭化珪素質膜の熱膨張係数
は、３．８×１０−６／℃（２０℃〜４５０℃）にする
のが好ましい。DESCRIPTION OF THE PREFERRED EMBODIMENTS A heating element according to the present invention is a vapor phase growth method in which a wafer is supported by a wafer holding member, and the heating element placed below the wafer holding member heats the wafer to form a vapor growth film on the wafer surface. Used in equipment. The heating element is a carbon base material,
It is made of a silicon carbide film provided on the surface thereof. The coefficient of thermal expansion of the carbon base material is made higher than the coefficient of thermal expansion of the silicon carbide film.
The thermal expansion coefficient of the carbon base material is 4.3 to 6.0 × 10 −6 /
C. (20.degree. C. to 450.degree. C.), the coefficient of thermal expansion of the silicon carbide film is preferably 3.8.times.10.sup.- 6 / .degree. C. (20.degree. C. to 450.degree. C.).
【手続補正２】[Procedure amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】００１７[Correction target item name] 0017
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【００１７】図６は約３，０００倍のＳｉＣ膜の模式図
である。図４、図５及び図６から明らかなように、α−
ＳｉＣがβ−ＳｉＣ結晶粒子の中に筋状に介在されてい
る。FIG. 6 is a schematic view of a SiC film of about 3,000 times. As is clear from FIGS. 4, 5 and 6, α−
SiC is interspersed linearly in the β-SiC crystal particles.
Claims (3)
ハを加熱して、ウエハ表面に気相成長膜を形成する気相
成長装置において、ウエハを加熱するための発熱体が、
炭素基材と、その表面に設けた炭化珪素質膜からなり、
炭化珪素質膜の熱膨張係数よりも炭素基材の熱膨張係数
を高くし、炭素基材の熱膨張係数を４．３〜６．０×１
０-6／℃（２０℃〜４５０℃）にすることを特徴とする
半導体熱処理用電気抵抗発熱体。1. In a vapor phase growth apparatus for supporting a wafer with a wafer holding member and heating the wafer to form a vapor phase growth film on the wafer surface, a heating element for heating the wafer comprises:
Consisting of a carbon base material and a silicon carbide film provided on its surface,
The thermal expansion coefficient of the carbon base material is made higher than that of the silicon carbide film, and the thermal expansion coefficient of the carbon base material is set to 4.3 to 6.0 × 1.
An electric resistance heating element for semiconductor heat treatment, characterized in that the temperature is set to 0 -6 / ° C (20 ° C to 450 ° C).
ハを加熱して、ウエハ表面に気相成長膜を形成する気相
成長装置において、ウエハを加熱するための発熱体が、
炭素基材と、その表面に設けた炭化珪素質膜からなり、
炭化珪素質膜がβ−ＳｉＣ結晶粒子の中にα−ＳｉＣを
筋状に介在させた複合組織であることを特徴とする半導
体熱処理用電気抵抗発熱体。2. In a vapor phase growth apparatus for supporting a wafer by a wafer holding member and heating the wafer to form a vapor phase growth film on the wafer surface, a heating element for heating the wafer comprises:
Consisting of a carbon base material and a silicon carbide film provided on its surface,
An electrical resistance heating element for semiconductor heat treatment, wherein the silicon carbide film has a complex structure in which α-SiC is interspersed linearly in β-SiC crystal grains.
が残るように炭化珪素質膜が炭素基材の表面に形成され
ている請求項１〜２のいずれか１項に記載の半導体熱処
理用電気抵抗発熱体。3. The semiconductor heat treatment according to claim 1, wherein the silicon carbide film is formed on the surface of the carbon base material so that a residual stress of −50 to −400 MPa remains at room temperature. Electric resistance heating element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7171591A JPH097956A (en) | 1995-06-15 | 1995-06-15 | Electric resistance heater for heat treating semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7171591A JPH097956A (en) | 1995-06-15 | 1995-06-15 | Electric resistance heater for heat treating semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH097956A true JPH097956A (en) | 1997-01-10 |
Family
ID=15926006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7171591A Pending JPH097956A (en) | 1995-06-15 | 1995-06-15 | Electric resistance heater for heat treating semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH097956A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10212181A (en) * | 1997-01-30 | 1998-08-11 | Toyo Tanso Kk | Carbon composite material for furnace with atmosphere of ammonia |
| US6541344B2 (en) | 2000-10-19 | 2003-04-01 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and semiconductor device manufacturing method |
| JP2006156686A (en) * | 2004-11-29 | 2006-06-15 | Chemitoronics Co Ltd | Heat treatment system |
| CN111501004A (en) * | 2020-05-09 | 2020-08-07 | 北京北方华创微电子装备有限公司 | Temperature control method and system, and semiconductor device |
-
1995
- 1995-06-15 JP JP7171591A patent/JPH097956A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10212181A (en) * | 1997-01-30 | 1998-08-11 | Toyo Tanso Kk | Carbon composite material for furnace with atmosphere of ammonia |
| US6541344B2 (en) | 2000-10-19 | 2003-04-01 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and semiconductor device manufacturing method |
| JP2006156686A (en) * | 2004-11-29 | 2006-06-15 | Chemitoronics Co Ltd | Heat treatment system |
| CN111501004A (en) * | 2020-05-09 | 2020-08-07 | 北京北方华创微电子装备有限公司 | Temperature control method and system, and semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI232891B (en) | SiC material, semiconductor device fabricating system and SiC material forming method | |
| US5904769A (en) | Epitaxial growth method | |
| TW200845145A (en) | Microbatch deposition chamber with radiant heating | |
| JPH1012563A (en) | Member for heat treatment of high-purity cvd-sic semiconductor and its manufacture | |
| JP3984820B2 (en) | Vertical vacuum CVD equipment | |
| JP3317781B2 (en) | Method of manufacturing susceptor for heat treatment of semiconductor wafer | |
| US5882807A (en) | Jig for heat treatment and process for fabricating the jig | |
| KR100251877B1 (en) | Chemical vapor deposition apparatus | |
| EP1416520B1 (en) | Heating apparatus with electrostatic attraction function and method for producing it | |
| JPH0758040A (en) | Susceptor for phase growth apparatus | |
| JPH09219369A (en) | Equipment and method for manufacturing semiconductor device | |
| JPH097956A (en) | Electric resistance heater for heat treating semiconductor | |
| JP3693739B2 (en) | High frequency induction furnace | |
| JP3694985B2 (en) | Vapor growth equipment | |
| JP3110978B2 (en) | Heating element for vapor phase growth equipment | |
| TW202217091A (en) | Method for growing single crystals | |
| JPH0658884B2 (en) | Vapor phase epitaxial growth system | |
| JPH0722342A (en) | Vapor growth device | |
| JP2764416B2 (en) | Susceptor | |
| JP2008260665A (en) | Method and apparatus for producing silicon carbide single crystal | |
| JP3230162B2 (en) | Vapor phase growth equipment | |
| JP2021031362A (en) | Method for manufacturing silicon carbide polycrystal substrate | |
| JP3810752B2 (en) | Vapor growth apparatus and vapor growth method | |
| US20020071803A1 (en) | Method of producing silicon carbide power | |
| JP2020178035A (en) | Susceptor, regeneration method of the same, and film formation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 8 Free format text: PAYMENT UNTIL: 20071105 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 9 Free format text: PAYMENT UNTIL: 20081105 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091105 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 10 Free format text: PAYMENT UNTIL: 20091105 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 11 Free format text: PAYMENT UNTIL: 20101105 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101105 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111105 Year of fee payment: 12 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111105 Year of fee payment: 12 |