JPH0964475A - Light emitting element and electron-beam-excited laser - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting element whose color purity is excellent and whose light-emitting efficiency is high and to provide an electron-beam- excited laser whose oscillation threshold input power is small and whose light- emitting efficiency is high by a method wherein electron-hole pairs and light are confined in a very small laser medium. SOLUTION: A light-emitting body 2 in which a light reflecting film 3 has been formed on one face is formed to be island-shaped, and a gap length between islands is set at 1/4 or higher of a wavelength. Alternatively, a light reflecting film is formed on the side face of every island.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device ranging from infrared to ultraviolet region, and particularly, it has high emission brightness and efficiency and various emission wavelengths can be selected. The present invention relates to a laser light emitting element and an electron beam excitation laser that can be applied to.

[0002]

2. Description of the Related Art Conventionally, III-V light emitting devices have been used.
LEDs that emit light by passing a current through the pn junction of group III compound semiconductors, and II-VI doped with light-emitting impurities
2. Description of the Related Art Electroluminescent devices in which a dielectric thin film is formed on both sides of a light emitting thin film made of a group compound semiconductor and an electric field is applied by electrodes provided outside the dielectric thin film to emit light are widely used. Also, a semiconductor laser has been developed in which a heterojunction having a structure for confining carriers is formed using a III-V group compound semiconductor and a laser is oscillated by passing a current through the junction. Also, the thickness is several tens of μm.
An electron-beam-excited laser that emits a powerful laser beam by irradiating the II-VI group compound semiconductors of the above with an electron beam of several tens of kV has also been prepared [Journal of Crystal
Grouse (Journal of Crystal Growth), 117, (1992) 104
0].

[0003]

However, the conventional laser device using a semiconductor has the problems of low emission efficiency and low emission output. Regarding injection type semiconductor lasers, green and blue lasers using II-VI group compound semiconductors have been actively studied, but their emission efficiency is poor and they have not been put to practical use. Although red and infrared semiconductor lasers using III-V group compound semiconductors are already on the market, elements having a large light emission output have not been put to practical use. Electron-excited lasers have been experimentally manufactured that emit red, green, and blue light, but their efficiency is extremely low and they generate a large amount of heat, so they have the problem that they need to be cooled with liquid nitrogen or the like.

As described above, it has been especially desired to realize a laser that efficiently emits a short wavelength light such as blue light or ultraviolet light, and a laser having a large oscillation power in the infrared to red regions, but it is put to practical use. I haven't arrived.

In order to solve the above-mentioned conventional problems, the present invention is capable of emitting light in the wavelength range from infrared to ultraviolet light, has a high luminous efficiency, and has a large emission output, a light emitting element for laser light, and an electron beam excitation laser. The purpose is to provide.

[0006]

In order to achieve the above-mentioned object, a light emitting device of the present invention has a light emitting body having opposing surfaces and a light reflecting film on at least one of the opposing surfaces on a substrate. A formed light-emitting element for infrared, visible, or ultraviolet laser light, in which the light-emitting body is separated and formed in an island shape, and the gap length between the islands is 1/4 or more of the emission wavelength. It is characterized by A light-emitting element for emitting infrared, visible, or ultraviolet laser light, which has a light-emitting body having a surface facing each other and having a light-reflecting film on at least one of the surfaces facing each other, The body is separated and formed into islands,
It is characterized in that a light reflecting film is provided on the side surface of the island.

In the above structure, it is preferable that the light emitter has a plate-like single crystal or thin film shape. Further, it is preferable that the energy gap of the light emitter corresponds to the energy of infrared light, visible light, and ultraviolet light.

In the light emitting device of the present invention, it is preferable that at least one opposing surface or side surface of the island-shaped light emitting body is covered with a barrier material having an energy gap larger than that of the light emitting body.

Further, in the light emitting device of the present invention, it is preferable that the energy gap of the barrier material is small at the interface with the light emitting body and changes so as to increase as the distance from the interface increases.

Further, in the light emitting device of the present invention, it is preferable that the light reflecting film is formed of a material having a refractive index smaller than that of the light emitting body, a multilayer dielectric film, or a metal.

Further, in the light emitting device of the present invention, the light emitting body is diamond, silicon carbide, a III-V group compound, or II.
It is preferable that at least one compound selected from b-VI group compounds, IIa-VI group compounds, chalcopyrite compounds, and manganese chalcogenide compounds is contained as a main component.

In the light emitting device of the present invention, it is preferable that the barrier material contains at least one selected from magnesium fluoride, calcium fluoride, strontium fluoride, and barium fluoride as a main component.

Next, the electron beam excitation laser of the present invention has infrared, visible, or visible light having a light-emitting body having opposing surfaces and having a light-reflecting film on at least one of the opposing surfaces. A light emitting element for ultraviolet light, wherein a light emitting body is formed in an island shape, and a gap length between the islands is 1/4 of an emission wavelength.
At least the light emitting element described above, an electron gun for irradiating the light emitting element with an accelerated electron beam, and a vacuum container accommodating these are provided, and the direction substantially vertical to the surface of the light emitting element by electron beam irradiation. It is characterized by oscillating a laser beam. A light-emitting element in which a light-emitting body having opposing surfaces and having a light-reflecting film on at least one of the opposing surfaces is formed on a substrate, and the light-emitting bodies are formed in an island shape, and the side surface of the island is formed. A light-emitting element having a light-reflecting film on its surface, an electron gun for irradiating the light-emitting element with an accelerated electron beam, and a vacuum container accommodating these are provided at least for the surface of the light-emitting element by electron beam irradiation. It is characterized in that laser light is oscillated in a substantially vertical direction.

In the structure of the light emitting material and the electron beam excitation laser of the present invention, a transparent material is used as the substrate, and the thickness of 10 nm or more and 500 n is provided on the electron beam irradiation side of the light emitting device.
It is preferable to provide a metal film having a thickness of m or less.

[0015]

According to the structure of the light emitting device of the present invention, the light emitted from the light emitting body can be confined in the island without propagating in the in-plane direction and emitted in one direction perpendicular to the thin film surface. The light output can be increased, and the electrons and holes are simultaneously confined in the islands, so that the threshold excitation power for laser oscillation is reduced and the light emission efficiency is increased.

According to the structure of the electron beam excitation laser of the present invention, the electrons and holes generated by the electron beam irradiation are confined in the island-shaped light emitting body, and the population inversion of carriers is formed. A proportion of the light generated in this situation is reflected by the surface of the light emitter. This reflected light causes stimulated emission light from the light emitter, which is amplified and causes laser oscillation. In the conventional electron beam excitation laser, since the laser oscillation medium (light emitter) has a continuous plate shape or a thin film shape, the light is not confined in the in-plane direction, so that the light loss is large, and a large oscillation threshold input is required. Was necessary, but
It is considered that the present invention has solved these problems and obtained an electron beam excitation laser having excellent characteristics.

The light reflecting film is formed on the side surface of the island-shaped light emitting body by
It is effective to make light confinement, which is one point of the present invention, more reliable. Further, the formation of the barrier layers on the surface of the island-shaped light-emitting body, particularly on both main surfaces is effective in ensuring the confinement of electrons and holes, which is another point of the present invention.

Further, the electron beam of this electron beam excitation laser is C
By scanning like RT, when used as a laser projection tube for a display, each island can function as each pixel. For example, three laser projection tubes of blue, red, and green are used to form the same screen. When an image is projected onto the image, the pixel array can be manufactured with high precision by the photolithography technique, so that there is no image blurring or color shift due to pixel shift, and a projection type display with excellent display quality can be configured.

[0019]

【Example】

(Embodiment 1) A light emitting device according to a first embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a sectional view showing the structure of a light emitting device according to the first embodiment of the present invention. On the glass substrate 1, square plate-shaped single crystal cadmium sulfide (CdS) 2 having a side of 40 μm and a thickness of 10 μm is arranged in a matrix with a gap 4 of 10 μm. In addition, a multilayer interference light reflection film 3 that selectively reflects light of 510 nm is formed on the single crystal cadmium sulfide 2.

The light emitting device 10 is manufactured as follows. First, one surface of a single crystal cadmium sulfide substrate having a thickness of 0.3 mm is polished to form an optically flat surface. After that, heat treatment is performed at 500 ° C. for 30 minutes in an inert gas atmosphere, the surface is further etched with dilute sulfuric acid, and then the polished surface is bonded to the glass substrate 1 with an epoxy resin. In this state, the thickness of the single crystal cadmium sulfide substrate is 10 μm.
Similarly, the other surface is polished and etched until it becomes.

Next, a multilayer interference light reflection film 3 composed of a titanium oxide layer and a silicon oxide layer was formed on the surface of the single crystal cadmium sulfide substrate which was not adhered to the glass substrate by the electron beam evaporation method. After that, by photolithography technology,
By removing the gap 4 by etching, the light emitting element is processed into an island shape to complete the light emitting element 10.

The single crystal cadmium sulfide 2 is excited in the light-emitting element formed as described above from the side of the light reflecting film 3 with ultraviolet rays of 325 nm to pass through the glass substrate 1 at 520.
It was possible to oscillate a green laser beam of nm. Further, the laser light of 520 nm could be oscillated through the glass substrate 1 also by exciting with an electron beam of 50 kV from the light reflecting film 3 side.

Comparison of the oscillation thresholds of this light emitting device and a conventional device in which the light emitting body was not processed into an island shape by etching revealed that the conventional device was 200 kW / cm ² and 150 kW under ultraviolet excitation and electron beam excitation, respectively. / Cm ²
However, in the device of the present invention,
It was W / cm ² and 80 kW / cm ² , and it was found that it was reduced to about 1/2. It is considered that this is because the gap is provided so that the side surface reflects light due to the difference in refractive index between the island-shaped light emitting body and air or vacuum, and the light confinement effect is increased. Further, when the distance of the gap 4 becomes 1/4 or less of the emission wavelength, some of the light propagates to the adjacent island due to the light bleeding effect, so that the light confinement is reduced and the oscillation threshold is reduced. Was found to be smaller. Further, if the gap 4 is increased to about the island arrangement period, the effect of reducing the oscillation threshold value can be obtained, but the ratio of the pixel area to the element area is reduced, so that the average luminance of the display is reduced.

(Embodiment 2) FIG. 2 is a sectional view showing the structure of a light emitting device according to a second embodiment of the present invention. In FIG. 2, one side is 40 μm and the thickness is 5 on the sapphire substrate 11.
μm square plate single crystal zinc cadmium sulfide (ZnC
The island-shaped light emitting body 12 made of dS) has a gap 14 of 1 μm.
Are arranged in a matrix. Further, a light reflection film 13 made of a silver thin film having a thickness of 150 nm is formed on the surface and the side surface of the island-shaped light emitting body 12, and a light absorption layer is formed on the surface of the sapphire substrate 11 in the gap 14 in order to improve the display quality. 15 is formed.

The light emitting device 20 is manufactured as follows. First, one surface of a single crystal cadmium zinc sulfide substrate having a thickness of 0.3 mm is polished to form an optically flat surface. After that, heat treatment is performed in an inert gas atmosphere containing carbon disulfide at 580 ° C. for 30 minutes, the surface is further etched with dilute sulfuric acid, and then the polished surface is bonded to the sapphire substrate 11 with an epoxy resin. In this state, the single crystal zinc cadmium sulfide substrate is similarly polished and etched on the other surface until the thickness thereof becomes 5 μm. After that, the light emitting body is processed into an island shape by etching away the gap portion by a photolithography technique.

Then, before removing the photoresist used when the luminous body was processed into an island shape as described above, 200 n
The light absorption layer 15 is formed by depositing m-thick manganese dioxide in the gap portion. After removing the photoresist, electron beam evaporation of silver is performed thereon, and the light reflection film 1 is formed.
The light emitting element 20 is completed by creating 3.

A 490 nm blue laser beam could be oscillated through the sapphire substrate 11 by exciting the light-emitting element formed as described above from the side of the light reflection film 13 with electron beam irradiation of 30 kV. Comparison of the oscillation thresholds of this light emitting device and the conventional device in which the light emitting body was not processed into an island shape by etching revealed that, also in this device, the threshold current density was about 1/2 as in the first embodiment. It turned out to be decreasing. In the present embodiment, the light absorption layer 15 is effective in ensuring the separation of light from each island and increasing the image contrast when the respective island-shaped light emitting bodies are sequentially oscillated by laser oscillation and an image is projected on the screen.

(Embodiment 3) FIG. 3 is a sectional view showing the structure of a light emitting device according to a third embodiment of the present invention. The structure of the light emitting device 30 shown in FIG. 3 is almost the same as that of the light emitting device 10 in the first embodiment shown in FIG. 1, but the surface of the island-shaped light emitting body 22 made of cadmium sulfide has a band gap larger than that of cadmium sulfide. Is about 1 eV and has the same lattice constant, and is covered with a barrier material 26 made of zinc magnesium selenide sulfide (ZnMgSSe) having a thickness of 0.3 μm.

This coating can be produced by the molecular beam epitaxial growth (MBE) method, and the coating is preferably performed on the entire surface, but the effect can be obtained only on both main surfaces or side surfaces. It is effective. It is considered that this is because the electron-hole pairs created by electron beam irradiation do not recombine non-radiatively on the surface of the light-emitting body but recombine (emits light) inside the light-emitting body.

The composition ratio of the barrier material magnesium zinc selenide selenide is changed so that the energy gap thereof is substantially equal to the energy gap of the light emitting body at the interface with the light emitting body, and becomes larger (Mg or Mg By increasing the ratio of S) in the film thickness direction, the electron-hole pairs formed in the barrier material by electron beam irradiation are also diffused into the light emitter and then recombined, so that the light emission efficiency is improved. Can be increased.

(Embodiment 4) FIG. 4 is a sectional view showing the structure of a light emitting device according to a fourth embodiment of the present invention. In FIG. 4, a multilayer interference light reflection film 38 that selectively reflects light of 350 nm is formed on a glass substrate 31, and a square plate-shaped single crystal sulfide having a side of 20 μm and a thickness of 5 μm is formed thereon. Luminescent bodies 32 made of zinc (ZnS) are arranged in a matrix with a gap of 3 μm. A light reflection film 33 made of an aluminum thin film having a thickness of 0.2 μm is formed on the light emitting body 32.

The light emitting device 40 is manufactured as follows. First, single crystal zinc sulfide having a thickness of 5 μm is epitaxially grown on a GaAs (100) substrate (not shown) by a metal organic chemical vapor deposition (MOCVD) method, and titanium oxide that selectively reflects light of 350 nm is formed on the substrate. A multilayer interference light reflection film 38 including a layer and a silicon oxide thin film layer is formed by an electron beam evaporation method. The multilayer interference light reflection film 38
Had a reflectance of 92%. Then, the surface on which the multilayer interference light reflection film 38 is deposited is adhered to the glass substrate 1 with an epoxy resin. Then, the GaAs substrate is removed by mechanical polishing and wet etching, and the light emitting body is processed into an island shape by etching away the gap portion by a photolithography technique. The light absorption layer 35 is formed by vacuum-depositing manganese dioxide in the gap portion before removing the photoresist used for processing the island shape. After removing the photoresist, aluminum is electron beam evaporated on the photoresist to form the light reflecting film 33, thereby completing the light emitting device 40.

By exciting this device with electron beam irradiation of 30 kV from the light reflecting film 13 side, it was possible to oscillate a 350 nm ultraviolet laser beam through the glass substrate 31. Comparing the oscillation thresholds of this light emitting device and a conventional device in which the light emitting body was not processed into an island shape by etching, it was found that the threshold current density was also reduced to about 1/2 in this device.

Although the green, blue and ultraviolet lasers have been described in the first to fourth embodiments, visible light and infrared light also oscillate by the constitution of the present invention by selecting the material of the light emitting body. It turned out to be possible. For example,
By using Zn _x Cd _{(1-x )} Se as a light-emitting body and changing the x value, the energy gap can be changed to a value corresponding to the energy of infrared light and visible light, and blue, green, red Laser oscillation can be performed with visible light or infrared light. Further, as the light emitter, diamond, silicon carbide, III-V group compound, IIb-VI group compound, IIa-VI group compound, chalcopyrite compound,
Alternatively, a semiconductor material containing one or more of manganese chalcogenide compounds as a main component can be used.

A laser having particularly excellent characteristics can be produced from a semiconductor containing at least one of these internal zinc sulfide, zinc selenide, cadmium sulfide, and gallium nitride as a main component. At this time, as the barrier material, an energy gap such as a material containing at least one of magnesium fluoride, calcium fluoride, strontium fluoride, and barium fluoride as a main component or a IIb-VI group compound containing Mn or Mg is used. Was larger than the energy gap of the luminescent material and the lattice constant was close to the lattice constant of the luminescent material.
In particular, Group IIa fluorides can be used as a light-emitting body by selecting an arbitrary lattice constant by changing the mixed crystal ratio.
Since it has a large difference in refractive index from the IIb-VI group compound and a large energy gap, it was excellent as a barrier material.

A laser having a smaller oscillation threshold input power was obtained in a thin film having a light emitting material having a low defect density and excellent crystallinity. That is, it can be said that both the emitter thin film and the barrier thin film are preferably epitaxial thin films in order to produce a better laser.

As the light reflecting film, the multilayer interference reflecting film made of a metal thin film or a dielectric has been described in the above embodiment,
A material having a smaller refractive index than the luminescent material was also effective. The Group IIa fluoride, which was effective as a barrier material, was also effective as a material having a small refractive index and a smaller refractive index than the light emitting body, or as a multilayer interference reflection film material.

(Embodiment 5) FIG. 5 shows the structure of a light emitting device used in an electron beam excitation laser according to a fifth embodiment of the present invention.
FIG. 6 is a diagram showing a schematic structure for explaining the electron beam excitation laser. This laser is roughly divided into three parts, that is, a light emitting element 50, an electron gun 52, and a vacuum container 51. Hereinafter, the structure of the light emitting element 50 shown in FIG. 5 will be described together with a manufacturing method.

On a GaAs (100) single crystal substrate (not shown), the band gap is about 0.5e from ZnSSe.
A barrier material 46 made of ZnMgSSe having a large V and an equal lattice constant is epitaxially grown to a thickness of 100 nm by the MBE method, a light emitting body 42 made of a ZnSSe thin film having a thickness of 6 μm is epitaxially grown thereon, and ZnMgSSe is further formed thereon. Barrier material 47
00 nm is epitaxially grown. On the barrier material 47, a multilayer interference light reflection film 48 made of a titanium oxide layer and a silicon oxide thin film layer that selectively reflects light of 465 nm is formed by an electron beam evaporation method. The reflectance of the multilayer interference light reflection film 48 was 93%.

Thereafter, the surface on which the multilayer interference light reflection film 48 is deposited is adhered to the glass substrate 41 with an epoxy resin, the GaAs substrate is removed by mechanical polishing and wet etching, and the gap portion is removed by etching by photolithography. By doing so, the light emitting body 42 and the barrier material 4
6, 47 and the light reflection film 48 are separated into islands. The shape of the island is a square with 25 μm on each side, and the gap width is 2
μm. Before removing the photoresist used for processing the island shape, 0.2 μm-thick manganese dioxide is vacuum-deposited on the gap to form the light absorption layer 45. After removing the photoresist, silver having a thickness of 150 nm is electron beam evaporated on the surface and the side surface of the island to form the light reflecting film 43, thereby completing the light emitting device 40.

The electron beam excitation laser shown in FIG. 6 uses the same manufacturing process as a normal cathode ray tube to produce a light emitting device 50.
Is fixed in the vacuum container 51 together with the electron gun 52, the light reflection film 43 and the anode button 53 are connected, and then vacuum exhaust is performed to complete the electron beam excitation laser.

By operating the electron gun 52 and irradiating the surface of the light reflection film 43 of the light emitting element 50 with an electron beam having a beam diameter of 20 μm accelerated to 40 kV, a blue laser having a wavelength of 465 nm was oscillated. At this time, the oscillation threshold current density of the laser was 15 A / cm ² .

Although the blue light laser has been described in the present embodiment, it was found that ultraviolet light and infrared light can also be lased by the constitution of the present invention by selecting the material of the light emitting body. Laser oscillation was possible even when the light reflection film was not formed on the electron beam irradiation side and the glass substrate side, but it was stable by forming the light reflection film on the electron beam irradiation side with a metal thin film and setting it to the anode potential. The obtained oscillation was obtained. If the thickness of this metal thin film is less than 10 nm, the light reflectance is low, and if it is 500 nm or more, the electron transmittance is low.
Those having a thickness of 0 nm or more and 500 nm or less were effective.
When irradiating with electrons accelerated by 10 to 40 kV, 10
Particularly high efficiency was obtained at 0 nm or more and 300 nm or less.

[0045]

Industrial Applicability As described above, the present invention provides a light-emitting element capable of lasing infrared to ultraviolet light by exciting ultraviolet rays or electron beams, and having high luminous efficiency and output, and an electron-beam excited laser. It can be applied to the display field, high-density optical disk memory field, optical communication field, etc., and its practical value is great.

[Brief description of drawings]

FIG. 1 is a sectional view showing the structure of a light emitting device according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing a structure of a light emitting device according to a second embodiment of the present invention.

FIG. 3 is a sectional view showing the structure of a light emitting device according to a third embodiment of the present invention.

FIG. 4 is a sectional view showing a structure of a light emitting device according to a fourth embodiment of the present invention.

FIG. 5 is a sectional view showing a structure of a light emitting device according to a fifth embodiment of the present invention.

FIG. 6 is a schematic sectional view of an electron beam excitation laser according to a fifth embodiment of the present invention.

[Explanation of symbols]

 10, 20, 30, 40, 50 Light-emitting element 1, 11, 21, 31, 41 Substrate 2, 12, 22, 32, 42 Light-emitting body 3, 13, 23, 33, 38, 43, 48 Light-reflecting film 4, 14 Gap 15, 35, 45 Light absorption layer 26, 46, 47 Barrier material 51 Vacuum container 52 Electron gun 53 Anode button

 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Ichiro Tanahashi 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Yuo Manabe, 1006 Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd.

Claims (13)

[Claims] 1. A light emitting device comprising a substrate, a light emitting body formed in an island shape on the substrate, and a light reflection film formed on a surface of the light emitting body, wherein the light emitting element is formed in an island shape. A light emitting device, wherein the island-to-island gap length of the light emitter is 1/4 or more of the emission wavelength. 2. A light emitting device comprising a substrate, a light emitting body formed in an island shape on the substrate, and a light reflecting film formed on a surface of the light emitting body, wherein the light emitting element is formed in an island shape. A light-emitting device having a light-reflecting film formed on a side surface of a light-emitting body. 3. A light emitting device comprising a substrate, a light emitting body formed in an island shape on the substrate, and a light reflection film formed on a surface of the light emitting body, wherein the light emitting element is formed in an island shape. A light-emitting element, wherein a light-reflecting film is formed on a side surface of the light-emitting body, and a gap length between islands of the light-emitting body formed in an island shape is 1/4 or more of an emission wavelength. 4. A light absorption layer is formed in a gap of an island-shaped light emitting body on a substrate.
The light-emitting element according to any one of the above. 5. A barrier having an energy gap larger than an energy gap of the light emitter on a surface of the light emitter that contacts the substrate, a surface that contacts the light reflection film of the light emitter, or at least one of the side surfaces of the light emitter. The light emitting element according to claim 1, wherein a material layer is formed. 6. The light emitting device according to claim 5, wherein the barrier material layer is configured such that an energy gap of the barrier material layer increases with distance from an interface with the light emitting body. 7. The light reflecting film is formed of a material having a refractive index smaller than that of the light emitting body, a multilayer dielectric film, or a metal, according to claim 1. Light emitting element. 8. The luminous body is diamond, silicon carbide, or III.
-V group compound, IIb-VI group compound, IIa-VI group compound,
7. The light emitting device according to claim 1, which contains at least one compound selected from a chalcopyrite compound and a manganese chalcogenide compound as a main component. 9. The light emission according to claim 5, wherein the barrier material contains at least one selected from magnesium fluoride, calcium fluoride, strontium fluoride, and barium fluoride as a main component. element. 10. A light emitting device comprising a substrate, a light emitting body formed in an island shape on the substrate, and a light reflection film formed on a surface of the light emitting body, wherein the light emitting element is formed in an island shape. A light emitting element in which the gap length between islands of the light emitting body is 1/4 or more of the emission wavelength, an electron gun for irradiating the light emitting element with an accelerated electron beam, and the light emitting element and the electron gun are housed. An electron beam excitation laser comprising a vacuum container and emitting laser light in a direction perpendicular to the surface of the light emitting element by electron beam irradiation from the electron gun. 11. A light emitting device comprising a substrate, a light emitting body formed in an island shape on the substrate, and a light reflection film formed on a surface of the light emitting body, wherein the light emitting element is formed in an island shape. A light emitting device in which a light reflecting film is formed on a side surface of the light emitting body; an electron gun for irradiating the light emitting device with an accelerated electron beam; and a vacuum container for housing the light emitting device and the electron gun An electron beam excitation laser, which emits laser light in a direction perpendicular to the surface of the light emitting element by irradiation of an electron beam from an electron gun. 12. A light emitting device comprising a substrate, a light emitting body formed in an island shape on the substrate, and a light reflecting film formed on a surface of the light emitting body, wherein the light emitting element is formed in an island shape. A light-reflecting film is formed on the side surface of the light-emitting body, and the island-to-island gap length of the light-emitting body formed in an island shape is 4
One or more light emitting elements, an electron gun for irradiating the light emitting elements with an accelerated electron beam, and a vacuum container accommodating the light emitting elements and the electron gun. Electron beam irradiation from the electron gun An electron beam excitation laser which emits laser light in a direction perpendicular to the surface of the light emitting device by means of the above. 13. The substrate according to claim 10, wherein the substrate is a translucent material, and a metal film having a thickness of 10 nm or more and 500 nm or less is provided on the electron beam irradiation side of the light emitting element. Electron beam excitation laser.