JPH0961830A - Production of liquid crystal element - Google Patents

Production of liquid crystal element

Info

Publication number
JPH0961830A
JPH0961830A JP21785095A JP21785095A JPH0961830A JP H0961830 A JPH0961830 A JP H0961830A JP 21785095 A JP21785095 A JP 21785095A JP 21785095 A JP21785095 A JP 21785095A JP H0961830 A JPH0961830 A JP H0961830A
Authority
JP
Japan
Prior art keywords
liquid crystal
electrode substrates
pair
heating
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21785095A
Other languages
Japanese (ja)
Inventor
Toshifumi Yoshioka
利文 吉岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP21785095A priority Critical patent/JPH0961830A/en
Priority to US08/687,990 priority patent/US5942066A/en
Publication of JPH0961830A publication Critical patent/JPH0961830A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To prevent such problems that enough adhesion strength of adhesive beads can not be obtd. and that a long time is required for the hardening treatment of a sealing agent for a liquid crystal cell. SOLUTION: A heat generating body 4 is attached with buffer materials 2a, 2b and heat plates 3a, 3b to a pair of electrode substrates 1a, 1b to transfer the heat generating from the heat generating body 4 through the heat plates 3a, 3b and the buffer materials 2a, 2b to the pair of electrode substrates 1a, 1b. Thus, the electrode substrates are heated at 1.0-4.0 deg.C/min. rising rate to harden a sealing agent 7 for a liquid crystal cell and adhesive beads 8.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、液晶素子の製造方
法に係り、特に対向する一対の電極基板間に液晶を封入
する液晶セル用シール剤及び一対の電極基板を接着する
接着剤ビースの硬化工程を有する液晶素子の製造方法に
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a liquid crystal element, and more particularly, to a liquid crystal cell sealant for enclosing a liquid crystal between a pair of opposing electrode substrates and a curing agent bead for adhering the pair of electrode substrates. The present invention relates to a method for manufacturing a liquid crystal element having steps.

【0002】[0002]

【従来の技術】従来、一対の電極基板を接着する液晶セ
ル用シール剤及び接着剤ビースの硬化方法は、一対の電
極基板を重ね合わせ、アライメントした後、加熱時の熱
膨張による電極基板の歪みを抑えるために電極基板全面
を、0.1〜5.0kg/cm2 の圧力で加圧しながら10
0〜200℃に設定されたオーブンの中で硬化させると
いう方法が一般的であった。
2. Description of the Related Art Conventionally, a method for curing a liquid crystal cell sealant and an adhesive bead for adhering a pair of electrode substrates has been such that a pair of electrode substrates are superposed and aligned, and then the electrode substrates are distorted due to thermal expansion during heating. In order to suppress the pressure, press the entire surface of the electrode substrate with a pressure of 0.1 to 5.0 kg / cm 2 and
A general method is to cure in an oven set to 0 to 200 ° C.

【0003】この時の電極基板の歪みを抑えるための加
圧方法としては、例えば、電極基板全面に加重を印加す
るおもりによる加圧方法やエアー圧、バネ荷重等を利用
した加圧治具による方法などがある。
As a pressing method for suppressing the distortion of the electrode substrate at this time, for example, a pressing method using a weight for applying a weight to the entire surface of the electrode substrate or a pressing jig using air pressure, spring load, etc. is used. There are ways.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、電極基
板の歪みを抑えるためのおもりやエアー圧、バネ荷重を
利用する加圧治具はそれ自体の熱容量が大きいため、例
えば160℃に設定のオーブン中に投入したエアー加圧
治具内の電極基板の温度が150℃に達するには約3時
間を要する。
However, since the weight, the air pressure, and the spring-loaded pressing jig for suppressing the distortion of the electrode substrate have a large heat capacity, the heating jig has a large heat capacity. It takes about 3 hours for the temperature of the electrode substrate in the air pressurizing jig introduced in step 1 to reach 150 ° C.

【0005】このように、オーブンでの昇温レートは、
使用する基板サイズ、処理枚数と、加える圧力や加圧治
具の仕様によって異なるが、例えば、500×500m
m角レベルの大基板を処理する場合には、一般に0.3
〜0.7℃/min 程度である。
Thus, the rate of temperature rise in the oven is
Depending on the size of the substrate to be used, the number of substrates to be processed, the pressure applied and the specifications of the pressure jig, for example, 500 x 500 m
When processing a large substrate of m-square level, generally 0.3
It is about 0.7 ° C./min.

【0006】そして、従来のように、昇温時間が非常に
遅い温度プロファイルでの硬化には以下のような問題が
あった。
Further, there is the following problem in the curing in the temperature profile in which the temperature rising time is very slow as in the conventional case.

【0007】(1)ホットメルトタイプの接着剤ビース
が十分に溶ける以前に、接着剤ビース中の硬化剤とエポ
キシ接着剤の硬化反応が進んでしまい、電極基板との界
面にいわゆる濡れが生じず、十分な接着強度が得られな
くなる。このような状態では、とりわけ強誘電性液晶素
子においては耐衝撃性が低下する恐れがある。
(1) Before the hot-melt type adhesive bead is sufficiently melted, the curing reaction between the curing agent and the epoxy adhesive in the adhesive bead proceeds, and so-called wetting does not occur at the interface with the electrode substrate. However, sufficient adhesive strength cannot be obtained. In such a state, impact resistance may be lowered particularly in the ferroelectric liquid crystal element.

【0008】(2)液晶セル用シール剤の硬化には約1
50〜160℃で、約1時間の熱処理が必要であるが、
上述した従来の硬化方法では、硬化のための熱処理時間
(約1時間)と、昇温時間(約3時間)、さらに冷却時
間必要であり、電極基板の投入から取り出しまでの処理
時間に長時間を要する。
(2) About 1 is required to cure the liquid crystal cell sealant.
Heat treatment at 50 to 160 ° C for about 1 hour is required,
In the above-mentioned conventional curing method, a heat treatment time (about 1 hour) for curing, a temperature raising time (about 3 hours) and a cooling time are required, and it takes a long time to process the electrode substrate until it is taken out. Requires.

【0009】更に、加圧治具内に電極基板を設置し、そ
れをオーブンに投入という従来の硬化方法では、大面積
の電極基板の加圧、加熱処理に、大型の加圧治具とオー
ブンが必要となるためにコストが高くなる。
Further, according to the conventional curing method in which an electrode substrate is placed in a pressure jig and is put in an oven, a large pressure jig and an oven are used for pressurizing and heating a large area electrode substrate. Therefore, the cost becomes high.

【0010】そこで、本発明は、液晶セル用シール剤の
硬化処理時間の短縮化と、十分な接着剤ビースの接着強
度を得ることができる液晶素子の製造方法を提供するこ
とを目的とする。
Therefore, it is an object of the present invention to provide a method of manufacturing a liquid crystal element, which can shorten the curing treatment time of a liquid crystal cell sealant and obtain a sufficient adhesive strength of an adhesive bead.

【0011】[0011]

【課題を解決するための手段】本発明は、上述事情に鑑
みなされたものであって、液晶がその間に注入される対
向する一対の電極基板の貼り合わせ面に、前記一対の電
極基板とそれ自身とで前記液晶を封入する液晶セル用シ
ール剤、及び前記一対の電極基板を接着する接着剤ビー
スを取り付けて前記一対の電極基板を貼り合わせ、前記
一対の電極基板を加熱、加圧して前記液晶セル用シール
剤及び接着剤ビースを硬化させる硬化工程を少なくとも
有する液晶素子の製造方法において、前記硬化工程に
て、前記一対の電極基板に発熱体を取り付け、前記発熱
体の発熱により前記一対の電極基板を1.0 〜4.0 ℃/mi
n の昇温速度で加熱して前記接着剤ビースを硬化させる
ことを特徴としている。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, in which the pair of electrode substrates and the pair of electrode substrates are provided on the bonding surfaces of the pair of opposing electrode substrates into which liquid crystal is injected. A liquid crystal cell sealant for enclosing the liquid crystal with itself, and an adhesive bead for adhering the pair of electrode substrates are attached to bond the pair of electrode substrates, and the pair of electrode substrates are heated and pressurized to In a method of manufacturing a liquid crystal element having at least a curing step for curing a liquid crystal cell sealant and an adhesive bead, in the curing step, a heating element is attached to the pair of electrode substrates, and the pair of electrodes is heated by the heating element. Electrode substrate 1.0 to 4.0 ℃ / mi
It is characterized in that the adhesive bead is cured by heating at a temperature rising rate of n 2.

【0012】また、好ましくは、前記発熱体を面状に形
成し電極基板に対応した大きさにする。
Further, preferably, the heating element is formed in a planar shape and has a size corresponding to the electrode substrate.

【0013】また、好ましくは、前記発熱体を、前記一
対の電極基板上の両面に均熱用のヒータプレートと緩衝
材を介して取り付ける。
Further, preferably, the heating element is attached to both surfaces of the pair of electrode substrates through a heater plate for soaking and a cushioning material.

【0014】[0014]

【発明の実施の形態】以下、図面に基づいて本発明の実
施の形態について説明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0015】図1は、本発明の実施の形態に係る液晶素
子の製造方法におけるシール剤及び接着剤ビースの硬化
工程を示す概略断面図である。
FIG. 1 is a schematic cross-sectional view showing a step of curing a sealant and an adhesive bead in a method of manufacturing a liquid crystal element according to an embodiment of the present invention.

【0016】この図に示すように、多段に設置された複
数の各一対の電極基板1a,1b間には、それぞれ下か
ら順に緩衝材2a、ヒートプレート3a、面状の発熱体
4、ヒートプレート3b、緩衝材2bが設置されてい
る。ヒートプレート3a、面状の発熱体4は、電極基板
1a,1bよりもやや大きく形成されており、緩衝材2
a,2b、ヒートプレート3bは、電極基板1a,1b
とほぼ同じ大きさで形成されている。
As shown in this figure, between each of the plurality of pairs of electrode substrates 1a, 1b arranged in multiple stages, the cushioning material 2a, the heat plate 3a, the planar heating element 4, and the heat plate are arranged in order from the bottom. 3b and cushioning material 2b are installed. The heat plate 3a and the planar heating element 4 are formed to be slightly larger than the electrode substrates 1a and 1b, and the cushioning material 2
a, 2b, the heat plate 3b, the electrode substrate 1a, 1b
It is formed with almost the same size as.

【0017】また、最上部に位置する電極基板1a,1
bの上部には、緩衝材2a、ヒートプレート3a、発熱
体4、ヒートプレート3b、緩衝材2bを介して加圧用
のアルミ材等からなるおもり5が載置され、最下部に位
置する電極基板1a,1bの下部にも、加圧台6との間
に緩衝材2a、ヒートプレート3a、発熱体4、ヒート
プレート3b、緩衝材2bが設置されている。
Further, the uppermost electrode substrates 1a, 1a
A weight 5 made of an aluminum material for pressurization is placed on the upper part of b via the cushioning material 2a, the heat plate 3a, the heating element 4, the heat plate 3b, and the cushioning material 2b, and the electrode substrate located at the lowermost position. The cushioning material 2a, the heat plate 3a, the heating element 4, the heat plate 3b, and the cushioning material 2b are also installed between the pressure table 6 and the lower portions of the lamas 1a and 1b.

【0018】対向して配置された一対の電極基板1a,
1bの、対向する面の少なくともどちらか一方側には、
それ自身とで液晶セルを封入するための一液型熱硬化性
エポキシ接着剤を含む液晶セル用シール剤7、及び電極
基板1a,1bを点接着する熱硬化性エポキシ接着剤を
含むホットメルトタイプの接着剤ビース8が取り付けら
れている。
A pair of electrode substrates 1a arranged to face each other,
On at least one side of the facing surface of 1b,
A liquid crystal cell sealant 7 containing a one-pack type thermosetting epoxy adhesive for encapsulating a liquid crystal cell by itself, and a hot melt type containing a thermosetting epoxy adhesive for spot-bonding the electrode substrates 1a and 1b. Adhesive beads 8 are attached.

【0019】緩衝材2a,2bは薄く形成されており、
各電極基板1a,1bが受けるおもり5による加圧力を
均一化するために設置されている。
The cushioning materials 2a and 2b are thinly formed,
It is installed in order to equalize the pressure applied by the weights 5 to the electrode substrates 1a and 1b.

【0020】ヒートプレート3a,3bは、その間に配
置される面状の発熱体4の発熱を電極基板1a,1bに
対して均一に伝熱するためのものであり、伝熱性のよい
アルミ材等で形成されている。
The heat plates 3a, 3b are for uniformly transmitting the heat generated by the planar heating element 4 arranged between them to the electrode substrates 1a, 1b, such as an aluminum material having good heat conductivity. Is formed by.

【0021】また、ヒートプレート3a,3bには温度
センサ(図示省略)が接続され、発熱体4には温調器
(図示省略)が接続されており、温度センサ(図示省
略)の温度情報に基づいて温調器(図示省略)を制御す
ることにより、発熱体4の発熱による電極基板1a,1
bの昇温速度を調整することができる。
A temperature sensor (not shown) is connected to the heat plates 3a and 3b, and a temperature controller (not shown) is connected to the heating element 4, and the temperature information of the temperature sensor (not shown) is connected to the temperature information. By controlling a temperature controller (not shown) based on the above, the electrode substrates 1a, 1
The temperature rising rate of b can be adjusted.

【0022】本発明では、発熱体4の発熱による電極基
板1a,1bの昇温速度を、1.0 〜4.0 ℃/min の範囲
に設定するようにしている。
In the present invention, the temperature rising rate of the electrode substrates 1a and 1b due to the heat generated by the heating element 4 is set within the range of 1.0 to 4.0 ° C./min.

【0023】このように、本発明の実施の形態に係る液
晶素子の製造方法における液晶セル用シール剤及び接着
剤ビースの硬化工程では、貼り合わせた各電極基板1
a,1bをおもり5で加圧しながら、各発熱体4の発熱
をヒートプレート3a,3b、緩衝材2a,2bを介し
て各電極基板1a,1bに伝熱して、液晶セル用シール
剤7及び接着剤ビース8を硬化させる。
As described above, in the curing process of the liquid crystal cell sealant and the adhesive bead in the method for manufacturing a liquid crystal element according to the embodiment of the present invention, the electrode substrates 1 bonded together are bonded.
While pressing the weights a and 1b with the weight 5, the heat generated by the heating elements 4 is transferred to the electrode substrates 1a and 1b through the heat plates 3a and 3b and the cushioning materials 2a and 2b, and the liquid crystal cell sealant 7 and The adhesive bead 8 is cured.

【0024】この時の発熱体4の発熱による電極基板1
a,1bの昇温速度は、例えば3.0℃/min に設定され
る。
Electrode substrate 1 due to heat generation of heating element 4 at this time
The temperature rising rate of a and 1b is set to 3.0 ° C./min, for example.

【0025】尚、緩衝材2a,2bは薄く形成され、ヒ
ートプレート3a,3bは伝熱性がよいので、発熱体4
の発熱をほとんど逃がすことなく電極基板1a,1bに
伝熱することができる。
Since the cushioning materials 2a and 2b are formed thin and the heat plates 3a and 3b have good heat conductivity, the heating element 4
It is possible to transfer heat to the electrode substrates 1a and 1b with almost no escape of heat.

【0026】次に、本発明の実施例を挙げて詳細に説明
する。
Next, examples of the present invention will be described in detail.

【0027】[0027]

【実施例】【Example】

(実施例1)上述した液晶セル用シール剤及び接着剤ビ
ースの硬化工程において、各一対の電極基板1a,1b
を構成する一方のガラス基板(一辺が500mmの正方形
で板厚は1.1mm)上に、スクリーン印刷法にて液晶セ
ル用シール剤(例えば、三井東圧化学社製、商品名:ス
トラクトボンドXN−21−F)を印刷し、その後、平
均粒径5.6μm 程度の接着剤ビース(例えば、東レ社
製、商品名:トレパールタイプIII )を1mm2 当たり平
均170個の密度で散布した。
(Example 1) In the curing process of the above-mentioned liquid crystal cell sealant and adhesive bead, each pair of electrode substrates 1a, 1b
On one of the glass substrates (a square with a side of 500 mm and a plate thickness of 1.1 mm) that composes the above, a sealant for liquid crystal cells (for example, Mitsui Toatsu Chemical Co., Ltd., trade name: Struct Bond XN) by screen printing -21-F) was printed, and thereafter, an adhesive bead having an average particle size of about 5.6 μm (for example, Toray Industries, Inc., trade name: Trepearl Type III) was sprayed at an average density of 170 pieces per 1 mm 2 .

【0028】また、一対の電極基板1a,1bを構成す
る他方のガラス基板(一辺が500mmの正方形で板厚は
1.1mm)上に平均粒径1.04μm 程度のスペーサー
(例えば、触媒化成工業社製、商品名:シリカマイクロ
ビーズ)を1mm2 当たり平均300個の密度で散布し
た。
On the other glass substrate (a square having a side of 500 mm and a plate thickness of 1.1 mm) which constitutes the pair of electrode substrates 1a and 1b, a spacer having an average particle size of about 1.04 μm (for example, Catalyst Chemical Industry) is used. (Trade name: silica microbeads, manufactured by the company) was sprayed at an average density of 300 pieces per 1 mm 2 .

【0029】そして、この2枚のガラス基板を貼り合わ
せて、一対の電極基板1a,1bを作成した。
Then, the two glass substrates were bonded together to form a pair of electrode substrates 1a and 1b.

【0030】そして、図1に示すように、加圧台6上に
設けた緩衝材(例えば、ブリジストン社製、商品名:エ
バーライトスコットフェルト、厚さ:1mm)2a、ヒー
トプレート(板厚が1mmのアルミ板)3a、面状の発熱
体(例えば、坂口電熱社製、商品名:サミコン230、
ワット密度:1W/cm2 )4、ヒートプレート(板厚が3
mmのアルミ板)3b、緩衝材(緩衝材2aと同じもの)
2bの上に最下部に位置する電極基板1a,1bを載置
し、最上部に位置する電極基板1a,1bとの間に設置
される複数の各電極基板1a,1b間にも同様の緩衝材
2a、ヒートプレート3a、発熱体4、ヒートプレート
3b、緩衝材2bを設け、更に、最上部に位置する電極
基板1a,1b上に設けた緩衝材2a、ヒートプレート
3a、発熱体4、ヒートプレート3b、緩衝材2bの上
におもり(板圧が8mmのアルミ板)5を載置する。
As shown in FIG. 1, a cushioning material (for example, manufactured by Bridgestone Co., trade name: Everlight Scott Felt, thickness: 1 mm) 2a provided on the pressure table 6 and a heat plate (plate thickness: 1 mm aluminum plate 3a, planar heating element (for example, Sakaguchi Dentsu Co., Ltd., trade name: Samicon 230,
Watt density: 1W / cm 2 ) 4, Heat plate (thickness is 3
mm aluminum plate) 3b, cushioning material (same as cushioning material 2a)
The lowermost electrode substrate 1a, 1b is placed on 2b, and a similar buffer is provided between the plurality of electrode substrates 1a, 1b installed between the uppermost electrode substrate 1a, 1b. The material 2a, the heat plate 3a, the heating element 4, the heat plate 3b, and the buffer material 2b are provided, and further, the buffer material 2a, the heat plate 3a, the heating element 4, and the heat provided on the uppermost electrode substrates 1a and 1b. A weight (aluminum plate having a plate pressure of 8 mm) 5 is placed on the plate 3b and the cushioning material 2b.

【0031】そして、これらをエアー加圧式の治具(図
示省略)内にセットし、各電極基板1a,1bに対して
おもり5で加圧すると共に、エアー圧(1kg/cm2)で加
圧し、各発熱体4に通電して発熱させ、ヒートプレート
3a,3b、緩衝材2a,2bを介して電極基板1a,
1bを加熱する。
Then, these are set in an air pressure type jig (not shown), and pressure is applied to each electrode substrate 1a, 1b by the weight 5 and air pressure (1 kg / cm 2 ). The heating elements 4 are energized to generate heat, and the electrode plates 1a, 3b, 3b
Heat 1b.

【0032】この時、温度センサ(図示省略)の温度情
報に基づいて温調器(図示省略)を制御することによ
り、発熱体4の発熱による電極基板1a,1bの昇温速
度を調整し、図2に示すように、ヒートプレート3a,
3b(電極基板1a,1b)を室温(25℃)から16
0℃まで3.0 ℃/min 昇温し(この間の昇温時間は約4
5分)、その後、160℃で約1時間保持してから冷却
(例えば、自然冷却)を行い、冷却終了後にこの電極基
板1a,1bを治具(図示省略)から取り出す。ところ
で、この加圧、加熱時に、電極基板1a,1bの温度を
急速に高めると(5.0 ℃/min 以上の昇温速度)、昇温
による電極基板1a,1b内の空気膨張速度が液晶セル
用シール剤の開口部(液晶注入口)から抜ける空気の速
度より速くなって、電極基板1a,1b内の圧力が上昇
し、電極基板1a,1b内の空気が前記開口部以外の部
分を破ってしまう恐れがある。このシール破れは、その
後の液晶注入工程において、注入不良の原因となり、製
造歩留りを低下させる。
At this time, the temperature controller (not shown) is controlled on the basis of the temperature information of the temperature sensor (not shown) to adjust the temperature rising rate of the electrode substrates 1a, 1b due to the heat generation of the heating element 4, As shown in FIG. 2, the heat plate 3a,
3b (electrode substrate 1a, 1b) from room temperature (25 ℃) to 16
3.0 ° C / min heating up to 0 ° C
5 minutes), after that, it is kept at 160 ° C. for about 1 hour and then cooled (for example, natural cooling), and after completion of cooling, the electrode substrates 1a and 1b are taken out from a jig (not shown). By the way, when the temperature of the electrode substrates 1a and 1b is rapidly increased (pressurization rate of 5.0 ° C./min or more) during the pressurization and heating, the air expansion rate in the electrode substrates 1a and 1b due to the temperature rise is for liquid crystal cells. The pressure in the electrode substrates 1a, 1b rises as the velocity of the air that escapes from the opening (liquid crystal injection port) of the sealant rises, and the air in the electrode substrates 1a, 1b breaks the parts other than the openings. There is a risk that This breakage of the seal causes a defective injection in the subsequent liquid crystal injection step, and reduces the manufacturing yield.

【0033】そこで、この時の歩留りを調べるために、
同じ条件で50枚の電極基板を作成したが、液晶セル用
シール剤の硬化時の圧力上昇によるシール破れは発生し
なかった。
Therefore, in order to check the yield at this time,
Fifty electrode substrates were prepared under the same conditions, but no seal breakage due to pressure increase during curing of the liquid crystal cell sealant did not occur.

【0034】更に、この電極基板1a,1bを35mm角
にカットして、接着剤ビース8の接着強度を剪断法によ
って測定した。表1は、この時の接着剤ビース8の接着
強度を示す測定結果である。
Further, the electrode substrates 1a and 1b were cut into a 35 mm square, and the adhesive strength of the adhesive bead 8 was measured by the shearing method. Table 1 shows the measurement results showing the adhesive strength of the adhesive bead 8 at this time.

【0035】[0035]

【表1】 そして、上述した本実施例で作成された電極基板1a,
1bとの比較を行うために、図3に示すように、比較サ
ンプルであるこの実施例と同様に作成された電極基板
(ヒートプレート3a,3b)に対して、加熱時に室温
(25℃)から160℃までを5.0 ℃/min で昇温した
(この間の昇温時間は約30分)。他の条件は上述した
実施例1と同様である。
[Table 1] Then, the electrode substrate 1a manufactured in the above-described embodiment,
In order to make a comparison with 1b, as shown in FIG. 3, an electrode substrate (heat plates 3a, 3b) made in the same manner as this example, which is a comparative sample, was heated from room temperature (25 ° C.) to room temperature (25 ° C.). The temperature was raised up to 160 ° C. at 5.0 ° C./min (heating time during this period was about 30 minutes). Other conditions are the same as those in the above-described first embodiment.

【0036】そして、この加圧、加熱時の歩留りを調べ
るために、同じ条件で50枚の電極基板を作成したとこ
ろ、18枚の電極基板に液晶セル用シール剤の硬化時の
圧力上昇によるシール破れが発生した。
Then, in order to examine the yield at the time of pressurization and heating, 50 electrode substrates were prepared under the same conditions. As a result, 18 electrode substrates were sealed by the pressure increase during curing of the liquid crystal cell sealant. A tear occurred.

【0037】更に、この電極基板を35mm角にカットし
て、接着剤ビースの接着強度を剪断法によって測定し
た。表2は、5.0 ℃/min の昇温速度で加熱した時の接
着剤ビースの接着強度を示す測定結果である。
Further, this electrode substrate was cut into a 35 mm square and the adhesive strength of the adhesive bead was measured by the shearing method. Table 2 shows the measurement results showing the adhesive strength of the adhesive bead when heated at a heating rate of 5.0 ° C./min.

【0038】[0038]

【表2】 この比較結果から明らかなように、表1に示す実施例1
の3.0 ℃/min の昇温速度における接着剤ビースの接着
強度は、表2に示す比較例の5.0 ℃/min の昇温速度に
おける接着剤ビースの接着強度とほとんど差はなく、昇
温速度を5.0 ℃/min から3.0 ℃/min に下げても接着
剤ビースの接着強度に問題はなかった。また、昇温速度
を1.0 〜4.0 ℃/min の範囲に設定して同様に接着剤ビ
ースの接着強度を測定してみた(図示省略)が、表1に
示す実施例1とほとんど変わらず、また、液晶セル用シ
ール剤の硬化時の圧力上昇によるシール破れの発生もな
かった。
[Table 2] As is clear from this comparison result, Example 1 shown in Table 1
The adhesive strength of the adhesive bead at the temperature rising rate of 3.0 ° C./min was almost the same as the adhesive strength of the adhesive bead at the temperature rising rate of 5.0 ° C./min of the comparative example shown in Table 2. Even if the temperature was lowered from 5.0 ° C / min to 3.0 ° C / min, there was no problem in the adhesive strength of the adhesive bead. Also, the adhesive strength of the adhesive bead was measured in the same manner by setting the temperature rising rate in the range of 1.0 to 4.0 ° C./min (not shown), but there is almost no difference from Example 1 shown in Table 1, and Also, there was no occurrence of breakage of the seal due to an increase in pressure during curing of the liquid crystal cell sealant.

【0039】このように、加熱時の昇温速度が5.0 ℃/
min (あるいは5.0 ℃/min 前後以上)では、液晶セル
用シール剤の硬化時の圧力上昇によってシール破れが発
生するが、1.0 〜4.0 ℃/min の範囲に昇温速度に設定
すると液晶セル用シール剤の硬化時の圧力上昇によるシ
ール破れの発生もなく、且つ十分な接着強度を得ること
ができる。
Thus, the heating rate during heating is 5.0 ° C. /
At min (or around 5.0 ℃ / min or more), the seal breaks due to the pressure rise during the curing of the liquid crystal cell sealant, but when the temperature rising rate is set in the range of 1.0 to 4.0 ℃ / min, the liquid crystal cell seal It is possible to obtain sufficient adhesive strength without causing breakage of the seal due to pressure increase during curing of the agent.

【0040】また、電極基板の加熱を、ヒートプレート
3a,3b、緩衝材2a,2bを介して接続している発
熱体4の発熱によって行うことにより、昇温速度を1.0
〜4.0 ℃/min の範囲で容易に制御することができる。
Further, the heating of the electrode substrate is performed by the heat generation of the heating element 4 connected through the heat plates 3a and 3b and the cushioning materials 2a and 2b, so that the temperature rising rate is 1.0.
It can be easily controlled in the range of up to 4.0 ° C / min.

【0041】尚、1.0 〜4.0 ℃/min の昇温速度は、従
来のオーブン加熱による昇温速度よりも速いので昇温時
間の短縮化を図ることができる。
Since the rate of temperature rise of 1.0 to 4.0 ° C./min is higher than the rate of temperature rise by conventional oven heating, the temperature rise time can be shortened.

【0042】更に、大面積の電極基板に対してもそれに
合わせた発熱体を使用するだけでよいので、従来のよう
に電極基板を加熱するための大型のオーブン等の設備が
不要となり、コストの低減を図ることができる。
Furthermore, since it is only necessary to use a heating element suitable for a large-area electrode substrate, there is no need for conventional equipment such as a large oven for heating the electrode substrate, which results in cost reduction. It can be reduced.

【0043】(実施例2)本実施例では、図1におい
て、各一対の電極基板1a,1bを構成する一方のガラ
ス基板(一辺が500mmの正方形で板厚は1.1mm)上
に、スクリーン印刷法にて液晶セル用シール剤(例え
ば、三井東圧化学社製、商品名:ストラクトボンドXN
−21−F)を印刷し、その後、平均粒径5.6μm 程
度の接着剤ビース(例えば、東レ社製、商品名:トレパ
ールタイプIII )を1mm2 当たり平均170個の密度で
散布した。
(Embodiment 2) In this embodiment, in FIG. 1, a screen is formed on one glass substrate (each side having a square of 500 mm and a plate thickness of 1.1 mm) which constitutes a pair of electrode substrates 1a and 1b. Sealant for liquid crystal cells by printing method (for example, Mitsui Toatsu Chemical Co., Ltd., trade name: Structbond XN
-21-F) was printed, and thereafter, an adhesive bead having an average particle size of about 5.6 μm (for example, Toray Industries, Inc., trade name: Trepearl Type III) was sprayed at an average density of 170 pieces per 1 mm 2 .

【0044】また、各一対の電極基板1a,1bを構成
する他方のガラス基板(板厚は1.1mm)上に平均粒径
1.04μm 程度のスペーサー(例えば、触媒化成工業
社製、商品名:シリカマイクロビーズ)を1mm2 当たり
平均300個の密度で散布した。
A spacer having an average particle size of about 1.04 μm (for example, a product name manufactured by Catalyst Kasei Kogyo Co., Ltd.) is formed on the other glass substrate (thickness is 1.1 mm) constituting each pair of electrode substrates 1a and 1b. : Silica micro beads) were sprayed at an average density of 300 per 1 mm 2 .

【0045】そして、この2枚のガラス基板を貼り合わ
せて、一対の電極基板1a,1bを作成した。
Then, the two glass substrates were bonded together to form a pair of electrode substrates 1a and 1b.

【0046】そして、この電極基板1a,1bを実施例
1と同様の方法で加圧、加熱して硬化処理した後、下記
の相転移温度を示すピリミジン系の強誘電性液晶を注入
して液晶パネルを20枚作成した。
The electrode substrates 1a and 1b were pressed and heated in the same manner as in Example 1 to be cured, and then a pyrimidine-based ferroelectric liquid crystal having the following phase transition temperature was injected to inject liquid crystals. 20 panels were prepared.

【0047】 そして、これらの20枚の液晶パネルは、上述した実施
例1と同様に液晶セル用シール剤の硬化時の圧力上昇に
よるシール破れの発生もなく、液晶注入にも問題はなか
った。
[0047] These 20 liquid crystal panels did not cause seal breakage due to pressure increase during curing of the liquid crystal cell sealant as in Example 1 described above, and had no problem in liquid crystal injection.

【0048】また、これらの液晶パネルに電気実装を施
した後、耐衝撃試験として50Gの落下試験を行った
が、液晶の配向に乱れは生じなかった。
After electrical mounting on these liquid crystal panels, a drop test of 50 G was performed as a shock resistance test, but the liquid crystal orientation was not disturbed.

【0049】そして、上述した本実施例に係る液晶パネ
ルとの比較を行うために、実施例1の比較サンプルとし
て作成した電極基板(加熱条件が図3に示したように、
室温(25℃)から160℃まで5.0 ℃/min で昇温
し、その後、160℃で約1時間保持してから冷却す
る)により実施例2と同様の方法で比較サンプルの液晶
パネルを20枚作成した。
Then, in order to make a comparison with the liquid crystal panel according to the present embodiment described above, an electrode substrate prepared as a comparative sample of the embodiment 1 (heating conditions as shown in FIG.
20 liquid crystal panels as comparative samples were prepared in the same manner as in Example 2 by raising the temperature from room temperature (25 ° C.) to 160 ° C. at 5.0 ° C./min, and then holding at 160 ° C. for about 1 hour and then cooling. Created.

【0050】そして、これらの20枚の液晶パネルのう
ちの8枚には、液晶セル用シール剤の硬化時の圧力上昇
によるシール破れが発生し、このため液晶注入時に注入
不良となってしまった。
Then, 8 of these 20 liquid crystal panels suffered from seal breakage due to pressure increase during curing of the liquid crystal cell sealant, resulting in injection failure during liquid crystal injection. .

【0051】また、耐衝撃試験(50Gの落下試験)を
行ったが、液晶の配向に乱れは生じなかった。
Further, an impact resistance test (drop test of 50 G) was conducted, but the alignment of the liquid crystal was not disturbed.

【0052】このように、本実施例による液晶パネル
は、液晶注入不良による製造歩留りもなく、また、耐衝
撃性にも優れている。
As described above, the liquid crystal panel according to the present embodiment has no manufacturing yield due to defective liquid crystal injection and is excellent in impact resistance.

【0053】[0053]

【発明の効果】以上説明したように、本発明によると、
液晶セル用シール剤及び接着剤ビースの硬化工程におい
て、一対の電極基板に発熱体を取り付け、発熱体の発熱
により一対の電極基板を1.0 〜4.0 ℃/min の昇温速度
で加熱して液晶セル用シール剤及び接着剤ビースを硬化
させることにより、液晶セル用シール剤の硬化時の圧力
上昇によるシール破れを発生させることなく硬化処理時
間が短縮化されることによって液晶素子の製造効率の向
上を図ることができ、且つ、十分な接着剤ビースの接着
強度も確保することができる。
As described above, according to the present invention,
In the curing process of the liquid crystal cell sealant and adhesive bead, the heating elements are attached to the pair of electrode substrates, and the pair of electrode substrates are heated by the heat generated by the heating elements at a temperature rising rate of 1.0 to 4.0 ° C / min to produce a liquid crystal cell. By curing the adhesive sealant and adhesive bead, the curing process time can be shortened without causing seal breakage due to the pressure rise during the curing of the liquid crystal cell sealant, thus improving the manufacturing efficiency of liquid crystal elements. The adhesive strength of the adhesive bead can be ensured.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施の形態に係る液晶セル用シール剤
及び接着剤ビースの硬化工程を示す概略断面図。
FIG. 1 is a schematic cross-sectional view showing a step of curing a liquid crystal cell sealant and an adhesive bead according to an embodiment of the present invention.

【図2】本発明の実施例に係る液晶セル用シール剤及び
接着剤ビースの硬化時の加熱条件を示す図。
FIG. 2 is a diagram showing heating conditions during curing of a liquid crystal cell sealant and an adhesive bead according to an example of the present invention.

【図3】本発明の実施例に対する比較サンプルにおける
加熱条件を示す図。
FIG. 3 is a diagram showing heating conditions in a comparative sample with respect to an example of the present invention.

【符号の説明】[Explanation of symbols]

1a,1b 電極基板 2a,2b 緩衝材 3a,3b ヒートプレート 4 発熱体 5 おもり 7 液晶セル用シール剤 8 接着剤ビース 1a, 1b Electrode substrate 2a, 2b Buffer material 3a, 3b Heat plate 4 Heating element 5 Weight 7 Liquid crystal cell sealant 8 Adhesive bead

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 液晶がその間に注入される対向する一対
の電極基板の貼り合わせ面に、前記一対の電極基板とそ
れ自身とで前記液晶を封入する液晶セル用シール剤、及
び前記一対の電極基板を接着する接着剤ビースを取り付
けて前記一対の電極基板を貼り合わせ、前記一対の電極
基板を加熱、加圧して前記液晶セル用シール剤及び接着
剤ビースを硬化させる硬化工程を少なくとも有する液晶
素子の製造方法において、 前記硬化工程にて、前記一対の電極基板に発熱体を取り
付け、前記発熱体の発熱により前記一対の電極基板を1.
0 〜4.0 ℃/min の昇温速度で加熱して前記接着剤ビー
スを硬化させる、 ことを特徴とする液晶素子の製造方法。
1. A sealant for a liquid crystal cell, which seals the liquid crystal between the pair of electrode substrates and itself on a bonding surface of a pair of opposite electrode substrates into which liquid crystal is injected, and the pair of electrodes. A liquid crystal device having at least a curing step of attaching an adhesive bead for adhering substrates and bonding the pair of electrode substrates together, and heating and pressurizing the pair of electrode substrates to cure the liquid crystal cell sealant and the adhesive bead. In the manufacturing method, in the curing step, a heating element is attached to the pair of electrode substrates, and the pair of electrode substrates is heated by the heat generated by the heating element to 1.
A method for manufacturing a liquid crystal element, comprising: heating the adhesive bead by heating at a temperature rising rate of 0 to 4.0 ° C./min.
【請求項2】 前記発熱体は、面状に形成され前記電極
基板に対応した大きさである、 請求項1記載の液晶素子の製造方法。
2. The method for manufacturing a liquid crystal element according to claim 1, wherein the heating element is formed in a planar shape and has a size corresponding to the electrode substrate.
【請求項3】 前記発熱体は、前記一対の電極基板上の
両面に均熱用のヒータプレートと緩衝材を介して取り付
けられる、 請求項1又は2記載の液晶素子の製造方法。
3. The method of manufacturing a liquid crystal element according to claim 1, wherein the heating element is attached to both surfaces of the pair of electrode substrates via a heater plate for soaking and a buffer material.
【請求項4】 前記電極基板は、多段に複数設置されて
いる、 請求項1乃至3のいずれか1項記載の液晶素子の製造方
法。
4. The method for manufacturing a liquid crystal element according to claim 1, wherein a plurality of the electrode substrates are installed in multiple stages.
【請求項5】 前記シール剤は、一液型熱硬化性エポキ
シ接着剤を含んでいる、 請求項1記載の液晶素子の製造方法。
5. The method for manufacturing a liquid crystal element according to claim 1, wherein the sealant contains a one-component thermosetting epoxy adhesive.
【請求項6】 前記接着剤ビースは、前記一対の電極基
板を点接着する熱硬化性エポキシ接着剤を含むホットメ
ルトタイプである、請求項1記載の液晶素子の製造方
法。
6. The method of manufacturing a liquid crystal element according to claim 1, wherein the adhesive bead is a hot-melt type including a thermosetting epoxy adhesive for spot-bonding the pair of electrode substrates.
JP21785095A 1995-07-28 1995-08-25 Production of liquid crystal element Pending JPH0961830A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP21785095A JPH0961830A (en) 1995-08-25 1995-08-25 Production of liquid crystal element
US08/687,990 US5942066A (en) 1995-07-28 1996-07-29 Process for producing liquid crystal device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21785095A JPH0961830A (en) 1995-08-25 1995-08-25 Production of liquid crystal element

Publications (1)

Publication Number Publication Date
JPH0961830A true JPH0961830A (en) 1997-03-07

Family

ID=16710750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21785095A Pending JPH0961830A (en) 1995-07-28 1995-08-25 Production of liquid crystal element

Country Status (1)

Country Link
JP (1) JPH0961830A (en)

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