JPH0961811A - Liquid crystal panel - Google Patents
Liquid crystal panelInfo
- Publication number
- JPH0961811A JPH0961811A JP23783695A JP23783695A JPH0961811A JP H0961811 A JPH0961811 A JP H0961811A JP 23783695 A JP23783695 A JP 23783695A JP 23783695 A JP23783695 A JP 23783695A JP H0961811 A JPH0961811 A JP H0961811A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- pixel electrode
- shielding film
- light
- crystal panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 24
- 230000002093 peripheral effect Effects 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract 2
- 239000010408 film Substances 0.000 claims description 76
- 239000000758 substrate Substances 0.000 claims description 33
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000010409 thin film Substances 0.000 claims description 10
- 239000011368 organic material Substances 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 18
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000000049 pigment Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000001023 inorganic pigment Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は液晶パネルに関し、
特に、薄膜トランジスタを用いたアクティブマトリクス
型液晶パネルに関するものである。The present invention relates to a liquid crystal panel,
In particular, it relates to an active matrix type liquid crystal panel using thin film transistors.
【０００２】[0002]
【従来の技術】アクティブマトリクス型液晶パネルで
は、各画素を分離してコントラストを向上させるため
に、ＴＦＴ基板上あるいは対向電極基板上または両基板
上に遮光膜が形成される。図４を用いて、特開平２−１
６６４２２号公報にて提案された、ＴＦＴ基板上に遮光
膜を形成する例について説明する。2. Description of the Related Art In an active matrix type liquid crystal panel, a light-shielding film is formed on a TFT substrate, a counter electrode substrate or both substrates in order to separate each pixel and improve contrast. With reference to FIG.
An example of forming a light-shielding film on a TFT substrate proposed in Japanese Patent No. 66422 will be described.
【０００３】ガラス基板２１上には、ＴＦＴのゲート電
極２２およびゲート絶縁膜２３が形成され、その上には
アンドープアモルファスシリコン層（以下、ｉ型ａ−Ｓ
ｉ層と記す）２４が形成され、さらにそのソース領域お
よびドレイン領域上にはこれらの領域とオーミックコン
タクトをとるためのリン（Ｐ）が高濃度にドープされた
アモルファスシリコン層（以下、ｎ+ 型ａ−Ｓｉ層と記
す）２５が形成されている。ゲート絶縁膜２３上にはま
たインジウム・スズ酸化物（ＩＴＯ）からなる画素電極
２６が形成されている。ｎ+ 型ａ−Ｓｉ層２５上には信
号線に接続されたドレイン電極２７と画素電極２６に接
続されたソース電極２８とが形成されている。A gate electrode 22 of a TFT and a gate insulating film 23 are formed on a glass substrate 21, and an undoped amorphous silicon layer (hereinafter, i-type aS) is formed on the gate electrode 22.
An i-layer 24 is formed, and an amorphous silicon layer (hereinafter referred to as n + type) highly doped with phosphorus (P) for making ohmic contact with these regions is formed on the source region and the drain region. An a-Si layer) 25 is formed. A pixel electrode 26 made of indium tin oxide (ITO) is also formed on the gate insulating film 23. A drain electrode 27 connected to the signal line and a source electrode 28 connected to the pixel electrode 26 are formed on the n + type a-Si layer 25.
【０００４】ドレイン電極２７、ソース電極２８および
画素電極２６上にはパッシベーション膜である絶縁膜２
９が形成されており、その上には、画素電極２６上の領
域を除いて、黒色顔料を含むネガ・フォトレジストから
なる有機遮光膜３０が形成されている。このＴＦＴ基板
は、対向電極の形成された対向電極基板と狭い間隙を隔
てて接着される。そして、両基板の間隙内に液晶が充填
されて、液晶パネルが製作される。An insulating film 2 which is a passivation film is formed on the drain electrode 27, the source electrode 28 and the pixel electrode 26.
9 is formed, and an organic light-shielding film 30 made of a negative photoresist containing a black pigment is formed thereon except the region on the pixel electrode 26. This TFT substrate is bonded to a counter electrode substrate having a counter electrode formed thereon with a narrow gap. Then, the liquid crystal is filled in the gap between the substrates to manufacture the liquid crystal panel.
【０００５】[0005]
【発明が解決しようとする課題】上述した従来例では、
画素電極と信号線（ドレイン電極に接続されている）と
が同層に形成されているため、両者間の接触を防止する
ために画素電極を信号線から後退させて形成する必要が
あり、そのため開口率の低下を招いていた。また、画素
電極と有機遮光膜との間にすきまができると、そのすき
まの領域上の液晶を制御することができず光漏れが生じ
るため、対向電極基板上に遮光膜（ブラックマトリク
ス）を設けない場合には画素電極と有機遮光膜とをオー
バラップさせなければならないが、有機遮光膜のパター
ニング精度は数μｍ程度と低いため、開口率のばらつき
が大きくなるという問題点があった。さらに、有機遮光
膜は、特に現像時間が長い場合、パターン端部の形状に
荒れが起こりやすい。また、金属遮光膜と異なり十分な
遮光性を確保するためには厚い膜厚の遮光膜が必要とな
る。パターン端部に荒れが生じたりあるいは端部での段
差が大きい場合、その付近の画素電極領域内に液晶の配
向不良が生じ、黒表示時にこの部分に明点の表示が現れ
るため、コントラストの低下を招く。In the above-mentioned conventional example,
Since the pixel electrode and the signal line (connected to the drain electrode) are formed in the same layer, the pixel electrode needs to be formed so as to recede from the signal line in order to prevent contact between the two. This has caused a decrease in aperture ratio. In addition, if a gap is formed between the pixel electrode and the organic light-shielding film, the liquid crystal in the region of the gap cannot be controlled and light leakage occurs. Therefore, a light-shielding film (black matrix) is provided on the counter electrode substrate. If not, the pixel electrode and the organic light-shielding film must be overlapped, but since the patterning accuracy of the organic light-shielding film is as low as several μm, there is a problem that the aperture ratio varies greatly. Furthermore, the organic light-shielding film is apt to be roughened in the shape of the end portion of the pattern particularly when the developing time is long. Further, unlike a metal light-shielding film, a thick light-shielding film is required to secure a sufficient light-shielding property. When the pattern edge is rough or the step at the edge is large, the liquid crystal alignment defect occurs in the pixel electrode area in the vicinity, and the display of a bright point appears in this portion during black display, which lowers the contrast. Invite.
【０００６】したがって、この発明の目的とするところ
は、第１に、開口率をばらつきなく大きくできるように
することであり、第２に、高いコントラスト比の液晶パ
ネルを提供しうるようにすることである。Therefore, an object of the present invention is to firstly increase the aperture ratio without variation, and secondly to provide a liquid crystal panel with a high contrast ratio. Is.
【０００７】[0007]
【課題を解決するための手段】上記の目的を達成するた
めの本発明による液晶パネルは、第１の透明基板上
に、複数の走査線とこれと直交する複数の信号線とが形
成され、走査線と信号線とによって形成される格子目ご
とに走査線と信号線とに接続された薄膜トランジスタと
該薄膜トランジスタに接続された画素電極とが形成され
てなるＴＦＴ基板と、第２の透明基板上に対向電極が
形成されてなる対向電極基板と、が液晶を挟持して対向
配置されているものであって、前記ＴＦＴ基板上の前記
画素電極と前記信号線とが絶縁膜を介して層間分離さ
れ、前記画素電極の外周縁部上にゲート電極を構成する
金属と同層の金属により第１の遮光膜が形成され、か
つ、前記画素電極上に開口端が前記第１の遮光膜上にあ
る開口が形成されている第１の遮光膜が前記ＴＦＴ基板
上を被覆していることを特徴としている。In order to achieve the above object, a liquid crystal panel according to the present invention has a plurality of scanning lines and a plurality of signal lines orthogonal to the scanning lines formed on a first transparent substrate. On a second transparent substrate, a TFT substrate in which a thin film transistor connected to the scanning line and the signal line and a pixel electrode connected to the thin film transistor are formed for each grid formed by the scanning line and the signal line. A counter electrode substrate having a counter electrode formed on the TFT substrate and a counter electrode substrate which are opposed to each other with a liquid crystal interposed therebetween, and the pixel electrode and the signal line on the TFT substrate are separated from each other via an insulating film. A first light-shielding film is formed on the outer peripheral edge of the pixel electrode by a metal in the same layer as the metal forming the gate electrode, and an opening end is formed on the pixel electrode on the first light-shielding film. First with an opening formed Shielding film is characterized in that it covers the TFT on the substrate.
【０００８】[0008]
【発明の実施の形態】次に、本発明の実施の形態につい
て図面を参照して説明する。図１は、本発明の第１の実
施例の平面図であり、図２はそのＡ−Ａ線の断面図であ
る。図１に示されるように、走査線１２と信号線１３と
が直交して形成されており、走査線と信号線とによって
形成される格子目には画素電極２が形成されている。各
画素電極２は薄膜トランジスタに接続されるが、薄膜ト
ランジスタは、走査線１２から突起して形成されたゲー
ト電極３と、信号線１３から突起して形成されたドレイ
ン電極７と、画素電極２に接続されたソース電極８と、
ｉ型ａ−Ｓｉ層５を構成要素として有している。Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a plan view of a first embodiment of the present invention, and FIG. 2 is a sectional view taken along the line AA. As shown in FIG. 1, the scanning lines 12 and the signal lines 13 are formed orthogonally to each other, and the pixel electrodes 2 are formed in the lattice formed by the scanning lines and the signal lines. Each pixel electrode 2 is connected to a thin film transistor, and the thin film transistor is connected to the pixel electrode 2 and the gate electrode 3 formed by protruding from the scanning line 12, the drain electrode 7 formed by protruding from the signal line 13. Source electrode 8 and
The i-type a-Si layer 5 is included as a constituent element.
【０００９】画素電極２の外周縁部には金属遮光膜１１
が形成されている。また、ＴＦＴ基板上は画素電極２上
に開口を有する有機遮光膜９によって被覆されている。
この有機遮光膜９の開口端は金属遮光膜１１上に設定さ
れている。図２に示されるように、ゲート電極３とｉ型
ａ−Ｓｉ層５との間にはゲート絶縁膜４が形成されてお
り、ｉ型ａ−Ｓｉ層５とドレイン電極７およびソース電
極８との間にはソース・ドレイン領域とのオーミックコ
ンタクトのためにｎ+ 型ａ−Ｓｉ層６が形成されてい
る。ゲート電極３は、透明導電膜３ａと金属膜３ｂとに
よって構成されている。A metal light-shielding film 11 is formed on the outer peripheral edge of the pixel electrode 2.
Are formed. The TFT substrate is covered with the organic light-shielding film 9 having an opening on the pixel electrode 2.
The open end of the organic light shielding film 9 is set on the metal light shielding film 11. As shown in FIG. 2, the gate insulating film 4 is formed between the gate electrode 3 and the i-type a-Si layer 5, and the i-type a-Si layer 5, the drain electrode 7, and the source electrode 8 are formed. An n + -type a-Si layer 6 is formed between them for ohmic contact with the source / drain regions. The gate electrode 3 is composed of a transparent conductive film 3a and a metal film 3b.
【００１０】このＴＦＴ基板は次のようにして作製され
る。ガラスのような透明絶縁基板１上にＩＴＯ等からな
る透明導電膜とＣｒ等からなる金属膜を成膜し、この２
層膜をパターニングして、画素電極２、ゲート電極３お
よび走査線１２を形成する。次に、画素電極２上の金属
膜を外周縁部分を残して除去して金属遮光膜１１を形成
する。続いて、プラズマＣＶＤ法により、ゲート絶縁膜
４、ｉ型ａ−Ｓｉ層５およびｎ+ 型ａ−Ｓｉ層６を連続
して成膜する。This TFT substrate is manufactured as follows. A transparent conductive film made of ITO or the like and a metal film made of Cr or the like are formed on a transparent insulating substrate 1 such as glass.
The layer film is patterned to form the pixel electrode 2, the gate electrode 3 and the scanning line 12. Next, the metal film on the pixel electrode 2 is removed except the outer peripheral edge portion to form the metal light shielding film 11. Subsequently, the gate insulating film 4, the i-type a-Si layer 5 and the n + -type a-Si layer 6 are continuously formed by the plasma CVD method.
【００１１】次に、ポジ型フォトレジストを用いたフォ
トリソグラフィによりｎ+ 型ａ−Ｓｉ層６およびｉ型ａ
−Ｓｉ層５をパターニングして薄膜トランジスタ形成個
所に島状のアモルファスシリコン膜を形成する。続い
て、画素電極２上のゲート絶縁膜４を除去する。次に、
Ｃｒ等の金属膜を成膜しこれをパターニングしてドレイ
ン電極７、ソース電極８を形成するとともにドレイン電
極に接続された信号線１３を形成する。続いて、露出し
たｎ+ 型ａ−Ｓｉ層６をエッチング除去する。Next, the n + type a-Si layer 6 and the i type a are formed by photolithography using a positive type photoresist.
The Si layer 5 is patterned to form an island-shaped amorphous silicon film at the thin film transistor formation portion. Then, the gate insulating film 4 on the pixel electrode 2 is removed. next,
A metal film of Cr or the like is formed and patterned to form the drain electrode 7 and the source electrode 8 and the signal line 13 connected to the drain electrode. Subsequently, the exposed n + type a-Si layer 6 is removed by etching.
【００１２】次に、黒色の顔料を含むネガ型フォトレジ
ストを塗布し、露光・現像を行って有機遮光膜９を形成
する。この有機遮光膜は、走査線１２および信号線１３
を完全に覆い、画素電極２の外周縁部と一部重なり、か
つ金属遮光膜１１上にパターンの端部がくるように形成
される。フォトレジストに含有される黒色の顔料には種
々の有機・無機顔料、あるいはそれらの混合物が用いら
れる。有機遮光膜は、非感光性の有機材料を用いて形成
してもよい。この場合、ポリアニリンや黒色の顔料を分
散させた有機材料を塗布・乾燥させた後、ポジ型フォト
レジストを塗布し、露光・現像を行って同時に有機遮光
膜をパターニングし、その後にフォトレジストを剥離除
去することによって形成することができる。Next, a negative photoresist containing a black pigment is applied, exposed and developed to form an organic light-shielding film 9. This organic light-shielding film is provided with the scanning line 12 and the signal line 13.
Is completely covered with, and partially overlaps with the outer peripheral edge portion of the pixel electrode 2, and the end portion of the pattern is formed on the metal light shielding film 11. As the black pigment contained in the photoresist, various organic / inorganic pigments or a mixture thereof is used. The organic light shielding film may be formed using a non-photosensitive organic material. In this case, an organic material in which polyaniline or a black pigment is dispersed is applied and dried, then a positive photoresist is applied, exposure and development are performed to simultaneously pattern the organic light-shielding film, and then the photoresist is peeled off. It can be formed by removing.
【００１３】形成されたＴＦＴ基板は配向処理が施され
た後、狭い間隙を隔てて対向電極基板と接着される。そ
して、接着された両基板の間隙内に液晶が封入されて液
晶パネルに組み立てられる。なお、本実施例の液晶パネ
ルにおいては、対向電極基板側に通常形成される遮光膜
（ブラックマトリクス）は形成されていない。このよう
に構成されたＴＦＴ基板では、画素電極と信号線とが別
々の層に形成されており、画素電極を信号線の方向に広
げても信号線との短絡が起こらないため、画素電極を広
くとることができ、開口率を高くすることができる。さ
らに金属遮光膜が画素電極上にあり、その外周縁部を覆
っているので、有機遮光膜のパターンの端部付近で起こ
る配向不良をこの金属遮光膜で隠すことができ、コント
ラストの低下を抑制することができる。さらに、形成さ
れる有機遮光膜の開口パターンにばらつきがあっても開
口率にばらつきが生じることはなく均一の品質の液晶パ
ネルを提供することができる。The formed TFT substrate is subjected to orientation treatment and then bonded to the counter electrode substrate with a narrow gap. Then, the liquid crystal is sealed in the gap between the two substrates that are adhered to each other and assembled into a liquid crystal panel. In the liquid crystal panel of this embodiment, the light shielding film (black matrix) that is usually formed on the counter electrode substrate side is not formed. In the TFT substrate thus configured, the pixel electrode and the signal line are formed in different layers, and even if the pixel electrode is expanded in the direction of the signal line, a short circuit with the signal line does not occur. It can be wide and the aperture ratio can be increased. Further, since the metal light-shielding film is on the pixel electrode and covers the outer peripheral edge of the pixel electrode, the metal light-shielding film can hide misalignment that occurs near the end of the pattern of the organic light-shielding film, and suppress the deterioration of contrast. can do. Furthermore, even if the opening pattern of the formed organic light-shielding film varies, the aperture ratio does not vary, and a liquid crystal panel of uniform quality can be provided.
【００１４】図３は、本発明の第２の実施例を示す断面
図である。本実施例の構造は、ドレイン電極７、ソース
電極８および信号線１３と有機遮光膜９との間に絶縁膜
１０が形成されている。この構造によれば、ソース電極
とドレイン電極間、および信号線間が絶縁膜１０によっ
て絶縁されることになるので、抵抗が低い、カーボン・
ブラックを黒色顔料として含む有機遮光膜を形成するこ
とができ、薄い膜厚でも高い遮光性が得られるため、こ
の有機遮光膜の端部付近の段差による配向不良を低減で
きる。また、本実施例では、画素電極上の金属膜（第１
金属膜）の除去をソース・ドレイン電極を形成する第２
金属膜のパターニング時に同時に行っている。これによ
り、フォトリソグラフィ工程およびエッチング工程を先
の実施例の場合よりも少なくすることができる。FIG. 3 is a sectional view showing a second embodiment of the present invention. In the structure of this embodiment, the insulating film 10 is formed between the drain electrode 7, the source electrode 8 and the signal line 13 and the organic light shielding film 9. According to this structure, the insulating film 10 insulates the source electrode and the drain electrode and the signal line from each other.
Since an organic light-shielding film containing black as a black pigment can be formed and a high light-shielding property can be obtained even with a thin film thickness, it is possible to reduce alignment defects due to a step near the end of the organic light-shielding film. In addition, in this embodiment, the metal film (first
Second removal of metal film to form source / drain electrodes
It is performed at the same time when the metal film is patterned. Thereby, the photolithography process and the etching process can be reduced as compared with the case of the previous embodiment.
【００１５】[0015]
【発明の効果】以上説明したように、本発明によるＴＦ
Ｔ基板は、従来同層にあった画素電極と信号線を絶縁膜
によって層間分離したものであるので、画素電極と信号
線との短絡の恐れがなくなり、画素電極を広げることが
できるため、開口率を向上させることができる。さら
に、画素電極上の外周縁部に金属遮光膜を設けたので、
有機遮光膜のパターニング精度が数μｍであっても有機
遮光膜の端部は金属遮光膜上に留まり画素電極上に至る
ことはなくなる。したがって、有機遮光膜の端部に大き
な段差が形成されたりパターンに荒れが生じることがあ
っても、液晶の配向配向の乱れを金属遮光膜によって遮
光することができ、光漏れによるコントラストの低下を
防ぐことができる。さらに、開口率のばらつきを防止し
て均一の品質の液晶パネルを提供することができる。As described above, the TF according to the present invention
Since the T substrate has the pixel electrode and the signal line in the same layer conventionally separated by an insulating film, there is no risk of a short circuit between the pixel electrode and the signal line, and the pixel electrode can be widened. The rate can be improved. Furthermore, since the metal light-shielding film is provided on the outer peripheral portion on the pixel electrode,
Even if the patterning accuracy of the organic light-shielding film is several μm, the end portion of the organic light-shielding film remains on the metal light-shielding film and does not reach the pixel electrode. Therefore, even if a large step is formed at the end of the organic light-shielding film or the pattern is roughened, the disorder of the alignment of the liquid crystal can be shielded by the metal light-shielding film, and the deterioration of the contrast due to light leakage can be prevented. Can be prevented. Furthermore, it is possible to provide a liquid crystal panel of uniform quality by preventing variations in aperture ratio.
【図１】本発明の第１の実施例の平面図。FIG. 1 is a plan view of a first embodiment of the present invention.
【図２】本発明の第１の実施例の断面図。FIG. 2 is a sectional view of the first embodiment of the present invention.
【図３】本発明の第２の実施例の断面図。FIG. 3 is a sectional view of a second embodiment of the present invention.
【図４】従来例の断面図。FIG. 4 is a sectional view of a conventional example.
１ 透明絶縁基板 ２、２６ 画素電極 ３、２２ ゲート電極 ３ａ 透明導電膜 ３ｂ 金属膜 ４、２３ ゲート絶縁膜 ５、２４ ｉ型ａ−Ｓｉ層 ６、２５ ｎ+ 型ａ−Ｓｉ層 ７、２７ ドレイン電極 ８、２８ ソース電極 ９、３０ 有機遮光膜 １０、２９ 絶縁膜 １１ 金属遮光膜 １２ 走査線 １３ 信号線 ２１ ガラス基板1 transparent insulating substrate 2, 26 pixel electrode 3, 22 gate electrode 3a transparent conductive film 3b metal film 4, 23 gate insulating film 5, 24 i-type a-Si layer 6, 25 n + -type a-Si layer 7, 27 drain Electrode 8, 28 Source electrode 9, 30 Organic light-shielding film 10, 29 Insulating film 11 Metal light-shielding film 12 Scan line 13 Signal line 21 Glass substrate
Claims (5)
と、これと交差して形成された複数の信号線と、走査線
と信号線とによって形成される格子目ごとに走査線と信
号線とに接続されて形成された薄膜トランジスタと、各
格子目ごとに前記薄膜トランジスタに接続されて形成さ
れた画素電極とを有するＴＦＴ基板と、（ｂ）対向電極
を有する対向電極基板と、が液晶を挟持して対向配置さ
れている液晶パネルにおいて、前記ＴＦＴ基板上の前記
画素電極と前記信号線とが絶縁膜を介して層間分離さ
れ、前記画素電極の外周縁部上に第１の遮光膜が形成さ
れ、かつ、前記画素電極上に開口端が前記第１の遮光膜
上にある開口が形成されている第２の遮光膜が前記ＴＦ
Ｔ基板上を被覆していることを特徴とする液晶パネル。1. (a) A plurality of scanning lines formed in parallel, a plurality of signal lines formed intersecting with the scanning lines, and a scanning line for each grid formed by the scanning lines and the signal lines. A thin film transistor connected to a signal line, a TFT substrate having a pixel electrode formed to be connected to the thin film transistor for each grid, and (b) a counter electrode substrate having a counter electrode In the liquid crystal panel, which is opposed to the pixel electrode on the TFT substrate, the pixel electrode and the signal line on the TFT substrate are separated from each other via an insulating film, and a first light-shielding film is formed on the outer peripheral edge of the pixel electrode. And a second light-shielding film having an opening whose opening end is on the first light-shielding film is formed on the pixel electrode is the TF.
A liquid crystal panel characterized in that it covers a T substrate.
構成する金属膜と同層の金属膜により形成されているこ
とを特徴とする液晶パネル。2. The liquid crystal panel, wherein the first light-shielding film is formed of a metal film in the same layer as the metal film forming the gate electrode.
する材料により形成されていることを特徴とする液晶パ
ネル。3. The liquid crystal panel, wherein the second light-shielding film is formed of a material mainly composed of an organic material.
が絶縁膜を介して前記第２の遮光膜によって被覆されて
いることを特徴とする液晶パネル。4. The liquid crystal panel, wherein the signal line and the thin film transistor are covered with the second light shielding film with an insulating film interposed therebetween.
ト絶縁膜により層間分離されていることを特徴とする液
晶パネル。5. A liquid crystal panel, wherein the pixel electrode and the signal line are separated from each other by the gate insulating film.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23783695A JP2882319B2 (en) | 1995-08-24 | 1995-08-24 | LCD panel |
| TW085110385A TW334522B (en) | 1995-08-24 | 1996-08-24 | Active matrix liquid crystal panel having thin film transistors |
| KR1019960035293A KR970011976A (en) | 1995-08-24 | 1996-08-24 | Active matrix liquid crystal panel with thin film transistor |
| US08/702,949 US5723878A (en) | 1995-08-24 | 1996-08-26 | Active matrix liquid crystal panel having thin film transistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23783695A JP2882319B2 (en) | 1995-08-24 | 1995-08-24 | LCD panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0961811A true JPH0961811A (en) | 1997-03-07 |
| JP2882319B2 JP2882319B2 (en) | 1999-04-12 |
Family
ID=17021139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23783695A Expired - Fee Related JP2882319B2 (en) | 1995-08-24 | 1995-08-24 | LCD panel |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5723878A (en) |
| JP (1) | JP2882319B2 (en) |
| KR (1) | KR970011976A (en) |
| TW (1) | TW334522B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100486686B1 (en) * | 2002-05-17 | 2005-05-03 | 엘지.필립스 엘시디 주식회사 | Liquid Crystal Display and Fabricating Method Thereof |
| KR100646780B1 (en) * | 1999-08-12 | 2006-11-17 | 삼성전자주식회사 | thin film transistor panels for liquid crystal display and manufacturing method thereof |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3856889B2 (en) | 1997-02-06 | 2006-12-13 | 株式会社半導体エネルギー研究所 | Reflective display device and electronic device |
| KR100268895B1 (en) * | 1997-12-27 | 2000-10-16 | 김영환 | Thin-film transistor and manufacturing method thereof |
| TWI382264B (en) | 2004-07-27 | 2013-01-11 | Samsung Display Co Ltd | Thin film transistor array panel and display device including the same |
| KR101610846B1 (en) | 2009-09-08 | 2016-04-11 | 삼성디스플레이 주식회사 | Display device and manufacturing method thereof |
| KR101972463B1 (en) * | 2011-02-18 | 2019-08-19 | 삼성디스플레이 주식회사 | Organic light emitting display and method of manufacturing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07181515A (en) * | 1993-12-22 | 1995-07-21 | Fujitsu Ltd | Production of liquid crystal display device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0270323B1 (en) * | 1986-11-29 | 1999-11-03 | Sharp Kabushiki Kaisha | Method of manufacture of a thin-film transistor |
| JP2514731B2 (en) * | 1990-02-05 | 1996-07-10 | シャープ株式会社 | Active matrix display |
| JP2518510B2 (en) * | 1993-04-22 | 1996-07-24 | 日本電気株式会社 | Thin film transistor array |
-
1995
- 1995-08-24 JP JP23783695A patent/JP2882319B2/en not_active Expired - Fee Related
-
1996
- 1996-08-24 TW TW085110385A patent/TW334522B/en not_active IP Right Cessation
- 1996-08-24 KR KR1019960035293A patent/KR970011976A/en active Search and Examination
- 1996-08-26 US US08/702,949 patent/US5723878A/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07181515A (en) * | 1993-12-22 | 1995-07-21 | Fujitsu Ltd | Production of liquid crystal display device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100646780B1 (en) * | 1999-08-12 | 2006-11-17 | 삼성전자주식회사 | thin film transistor panels for liquid crystal display and manufacturing method thereof |
| KR100486686B1 (en) * | 2002-05-17 | 2005-05-03 | 엘지.필립스 엘시디 주식회사 | Liquid Crystal Display and Fabricating Method Thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR970011976A (en) | 1997-03-29 |
| US5723878A (en) | 1998-03-03 |
| TW334522B (en) | 1998-06-21 |
| JP2882319B2 (en) | 1999-04-12 |
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