JPH0951086A - Solid state image sensor - Google Patents
Solid state image sensorInfo
- Publication number
- JPH0951086A JPH0951086A JP7201949A JP20194995A JPH0951086A JP H0951086 A JPH0951086 A JP H0951086A JP 7201949 A JP7201949 A JP 7201949A JP 20194995 A JP20194995 A JP 20194995A JP H0951086 A JPH0951086 A JP H0951086A
- Authority
- JP
- Japan
- Prior art keywords
- transfer electrode
- shunt wiring
- light receiving
- buffer film
- receiving region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、固体撮像素子に関
し、特にはシャント配線を有するＣＣＤ固体撮像素子に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image sensor, and more particularly to a CCD solid-state image sensor having shunt wiring.
【０００２】[0002]
【従来の技術】図４には、ＨＤＴＶ（High Definition
Television）に用いられるようなシャント配線を有する
ＣＣＤ固体撮像素子の要部平面図を示し、図５には図４
の平面図におけるＡ−Ａ’断面図を示す。尚、これらの
図においては、基板，絶縁膜，層間絶縁膜及び遮光膜を
断面図のみに示して平面図での図示を省略してある。こ
れらの図に示すように、固体撮像素子４の基板２１の表
面側には、複数の受光領域１１が配列形成されている。
これらの受光領域１１が形成された基板２１の表面は絶
縁膜２２で覆われ、各受光領域１１脇の絶縁膜２２上に
は、表面が絶縁膜２３で覆われたポリシリコンからなる
第１転送電極１２（図中破線で示す）と第２転送電極１
３（図中一点鎖線で示す）とが配置されている。これら
の第１転送電極１２と第２転送電極１３とは、図中矢印
で示した電荷の転送方向Ａに沿って、各受光領域１１に
対して一組の第１転送電極１２と第２転送電極１３とが
交互に配置され、さらに各第１転送電極１２の両端部上
にはこれに隣接して配置される各第２転送電極１３の端
部が積層された状態で配置されている。また、転送方向
Ａとほぼ直交する方向に配列された受光領域１１間に配
置される各第１転送電極１２は、受光領域１１間におい
て接続されている。第２転送電極１３間も、これと同様
の状態に接続されている。2. Description of the Related Art FIG. 4 shows an HDTV (High Definition
FIG. 5 is a plan view of a main part of a CCD solid-state image sensor having shunt wiring as used in Television.
A sectional view taken along the line AA ′ in FIG. In these figures, the substrate, the insulating film, the interlayer insulating film, and the light shielding film are shown only in the cross-sectional views and are not shown in the plan view. As shown in these figures, a plurality of light receiving regions 11 are formed in an array on the front surface side of the substrate 21 of the solid-state imaging device 4.
The surface of the substrate 21 on which these light receiving regions 11 are formed is covered with an insulating film 22, and on the insulating film 22 beside each light receiving region 11, the first transfer made of polysilicon whose surface is covered with an insulating film 23. Electrode 12 (shown by a broken line in the figure) and second transfer electrode 1
3 (indicated by an alternate long and short dash line in the figure) are arranged. The first transfer electrode 12 and the second transfer electrode 13 are connected to each light receiving region 11 along the charge transfer direction A shown by an arrow in the figure, and a pair of the first transfer electrode 12 and the second transfer electrode 12 are provided. The electrodes 13 are alternately arranged, and further, the ends of the second transfer electrodes 13 adjacent to the first transfer electrodes 12 are stacked on both ends of each of the first transfer electrodes 12. Further, the first transfer electrodes 12 arranged between the light receiving regions 11 arranged in a direction substantially orthogonal to the transfer direction A are connected between the light receiving regions 11. The second transfer electrodes 13 are also connected in the same state.
【０００３】また、第１転送電極１２及び第２転送電極
１３上には、表面が絶縁膜２４で覆われたポリシリコン
かならなる緩衝膜１４が電荷の転送方向と平行に配置さ
れている。そして、この緩衝膜１４上には層間絶縁膜２
５を介してアルミニウムのような抵抗の低い材質からな
るシャント配線１５が形成されている。これらの緩衝膜
１４及びシャント配線１５は、一定の幅で形成されてい
る。さらに、緩衝膜１４と第１転送電極１２または第２
転送電極１３との間の絶縁膜２３には、緩衝膜１４と第
１転送電極１２または第２転送電極１３とを接続するた
めの第１コンタクト部１６が形成されている。一方、緩
衝膜１４とシャント配線１５との間の絶縁膜２４及び層
間絶縁膜２５には緩衝膜１４とシャント配線１５とを接
続するための第２コンタクト部１７が形成されている。Further, on the first transfer electrode 12 and the second transfer electrode 13, a buffer film 14 made of polysilicon, the surface of which is covered with an insulating film 24, is arranged in parallel with the charge transfer direction. The interlayer insulating film 2 is formed on the buffer film 14.
A shunt wiring 15 made of a material having a low resistance such as aluminum is formed through the wiring 5. The buffer film 14 and the shunt wiring 15 are formed with a constant width. Further, the buffer film 14 and the first transfer electrode 12 or the second
A first contact portion 16 for connecting the buffer film 14 and the first transfer electrode 12 or the second transfer electrode 13 is formed in the insulating film 23 between the transfer electrode 13. On the other hand, a second contact portion 17 for connecting the buffer film 14 and the shunt wiring 15 is formed in the insulating film 24 and the interlayer insulating film 25 between the buffer film 14 and the shunt wiring 15.
【０００４】そして、シャント配線１５を覆う状態の層
間絶縁膜２６が層間絶縁膜２５上に形成され、上記各構
成要素が形成された基板２１上は、受光領域１１上に開
口部２８ａを有する遮光膜２８が形成されている。この
遮光膜２８は、アルミニウムのような遮光性に優れた材
質からなるものである。また、上記遮光膜２８が形成さ
れた基板２１の上方には、各受光領域１１に光ｈを集光
するための集光レンズ（図示せず）が配置されている。Then, an interlayer insulating film 26 covering the shunt wiring 15 is formed on the interlayer insulating film 25, and on the substrate 21 on which the above-mentioned components are formed, a light shield having an opening 28a on the light receiving region 11 is formed. The film 28 is formed. The light shielding film 28 is made of a material having excellent light shielding properties such as aluminum. Further, a condenser lens (not shown) for condensing the light h in each light receiving region 11 is arranged above the substrate 21 on which the light shielding film 28 is formed.
【０００５】上記構成の固体撮像素子４では、低抵抗の
シャント配線１５を第１転送電極１２や第２転送電極１
３に接続させたことによって高速動作が可能になってい
る。また、第１転送電極１２または第２転送電極１３と
シャント配線１５とは緩衝膜１４を介して接続されるた
め、シャント配線１５を構成するアルミニウムがコンタ
クト部において、第１転送電極１２または第２転送電極
１３と接触することにより生じるポテンシャルシフトを
防止できる。In the solid-state image pickup device 4 having the above structure, the low resistance shunt wiring 15 is connected to the first transfer electrode 12 and the second transfer electrode 1.
By connecting to No. 3, high-speed operation is possible. Further, since the first transfer electrode 12 or the second transfer electrode 13 and the shunt wiring 15 are connected via the buffer film 14, the aluminum forming the shunt wiring 15 is in the contact portion the first transfer electrode 12 or the second transfer electrode 12. It is possible to prevent potential shift caused by contact with the transfer electrode 13.
【０００６】[0006]
【発明が解決しようとする課題】しかし、上記構成の固
体撮像素子では、シャント配線を設けたことによって受
光領域の側周壁が高くなっている。そして、特に、図５
の断面図に示した第１転送電極１２と第２転送電極１３
との積層部分は、他の部分と比較して側周壁が高いた
め、シャント配線１５や緩衝膜１４の肩部を覆う遮光膜
２８の張り出し部ｂが受光領域１１の側周壁の高い位置
に配置される。このため、一定の入射角度で受光領域１
１に入射した光ｈが張り出し部ｂで反射するいわゆる
“けられ”が発生し易くなっている。この“けられ”が
発生すると、受光領域１１に入射する光ｈの量が減少す
ることから、各受光領域１１の感度が低下する。However, in the solid-state image pickup device having the above structure, the side peripheral wall of the light receiving region is raised due to the provision of the shunt wiring. And, in particular, FIG.
The first transfer electrode 12 and the second transfer electrode 13 shown in the sectional view of FIG.
Since the side peripheral wall of the laminated portion with is higher than that of other portions, the protruding portion b of the light shielding film 28 covering the shoulders of the shunt wiring 15 and the buffer film 14 is arranged at a position higher than the side peripheral wall of the light receiving region 11. To be done. For this reason, the light receiving area 1 is formed at a constant incident angle.
The so-called "vignetting" in which the light h incident on the beam No. 1 is reflected by the protruding portion b is likely to occur. When this "vignetting" occurs, the amount of light h incident on the light receiving regions 11 decreases, and the sensitivity of each light receiving region 11 decreases.
【０００７】また、プロセスのぱらつきの問題から、第
１転送電極１２と第２転送電極１３との形成位置に対し
てシャント配線１５や緩衝膜１４の形成位置にずれが生
じると、各受光領域１１の側周壁において、上記張り出
し部ｂの受光領域１１側への張り出し量にばらつきが生
じて“けられ”の発生し易さが不均一になる。このた
め、各受光領域１１毎の感度にばらつきが生じてしま
う。上記感度の低下やばらつきの要因となる“けられ”
の発生を防止するためには、シャント配線１５や緩衝膜
１４全体の線幅を細くして上記張り出し部ｂの張り出し
を抑え、光ｈの実効的な集光角度を広くする必要があ
る。しかし、シャント配線１５や緩衝膜１４の線幅を細
くすると、コンタクト部（１６，１７）に対する緩衝膜
１４やシャント配線１５の合わせ余裕が少なくなる。こ
のための製造バラツキに対して余裕がなくなってしま
う。Further, due to the problem of process variation, if the formation positions of the shunt wiring 15 and the buffer film 14 deviate from the formation positions of the first transfer electrode 12 and the second transfer electrode 13, the respective light receiving regions 11 are formed. In the side peripheral wall of the above, the amount of protrusion of the protrusion b toward the light receiving region 11 side varies, and the likelihood of occurrence of "vignetting" becomes uneven. Therefore, the sensitivities of the respective light receiving regions 11 vary. "Keke" that causes the above-mentioned sensitivity deterioration and variation
In order to prevent the occurrence of the above, it is necessary to reduce the line width of the shunt wiring 15 and the buffer film 14 as a whole to suppress the protrusion of the protrusion b and widen the effective converging angle of the light h. However, if the line widths of the shunt wiring 15 and the buffer film 14 are reduced, the alignment margin of the buffer film 14 and the shunt wiring 15 with respect to the contact portions (16, 17) is reduced. There is no room for manufacturing variations due to this.
【０００８】[0008]
【課題を解決するための手段】そこで、本発明は、受光
領域脇の基板上に端部を積層する状態で配置された複数
の転送電極とこの上部に配置されるシャント配線とを有
するＣＣＤ固体撮像素子において、シャント配線及びこ
の下の緩衝膜の少なくとも何方か一方を、転送電極の積
層部上に位置する部分の線幅をその他の部分の線幅より
も細く形成したものとすることを特徴としている。上記
構成の固体撮像素子では、転送電極の積層部上でシャン
ト配線や緩衝膜の線幅が細くなっていることから、上記
受光領域の側周壁において上記積層部上のシャント配線
や緩衝膜の受光領域側へ張り出しが抑えられる。このた
め、受光領域に入射される光が、上記の張り出し部分で
“けられ”ることが防止される。In view of the above, the present invention provides a CCD solid having a plurality of transfer electrodes arranged on the substrate beside the light receiving region in a state where the end portions are laminated and a shunt wiring arranged above the transfer electrodes. In the image pickup device, at least one of the shunt wiring and the buffer film below the shunt wiring is formed such that the line width of a portion located on the laminated portion of the transfer electrodes is thinner than the line width of the other portions. I am trying. In the solid-state imaging device having the above configuration, since the line width of the shunt wiring or the buffer film is thin on the laminated portion of the transfer electrodes, the shunt wiring or the buffer film on the laminated portion on the side peripheral wall of the light receiving region receives light. Overhang is suppressed to the area side. Therefore, it is possible to prevent the light incident on the light receiving region from being “viked” at the above-mentioned protruding portion.
【０００９】[0009]
【発明の実施の形態】以下、図面に基づいて、本発明の
実施の形態を説明する。図１〜図３は、本発明における
請求項１の固体撮像素子の構成を説明するための図であ
り、先ず、これらの図を用いて請求項１記載の固体撮像
素子の一例を説明する。尚、図１は固体撮像素子の要部
平面図であり、図２は図１におけるＢ−Ｂ’断面図，図
３は図１におけるＣ−Ｃ’断面図である。これらの図に
おいては、基板，絶縁膜，層間絶縁膜及び遮光膜を断面
図のみに示して平面図での図示を省略してある。また、
各構成要素には従来例と同一の符号を付し、重複する構
成部分に関しては説明を省略する。Embodiments of the present invention will be described below with reference to the drawings. 1 to 3 are diagrams for explaining the configuration of the solid-state image sensor according to claim 1 of the present invention. First, an example of the solid-state image sensor according to claim 1 will be described with reference to these drawings. 1 is a plan view of an essential part of the solid-state imaging device, FIG. 2 is a sectional view taken along the line BB ′ in FIG. 1, and FIG. 3 is a sectional view taken along the line CC ′ in FIG. In these figures, the substrate, the insulating film, the interlayer insulating film, and the light shielding film are shown only in the cross-sectional views and are not shown in the plan view. Also,
The same reference numerals as in the conventional example are given to the respective constituent elements, and the description of the overlapping constituent parts will be omitted.
【００１０】上記各図に示すように、従来の固体撮像素
子（４）と本実施形態に示す固体撮像素子１との異なる
点は、緩衝膜１４の形状にある。すなわち、緩衝膜１４
は、図３のＣ−Ｃ’断面に示す第１転送電極１２及び第
２転送電極１３が積層された部分（以下、積層部と記
す）上に配置される部分の幅Ｗ1 が、その他の部分、つ
まり図２のＢ−Ｂ’断面に示す第１転送電極１２と第２
転送電極１３とが積層されない部分（以下、単層部と記
す）の幅Ｗ2 よりも細く形成されてなるものである。As shown in the above figures, the difference between the conventional solid-state image pickup device (4) and the solid-state image pickup device 1 shown in this embodiment lies in the shape of the buffer film 14. That is, the buffer film 14
Is the width W 1 of the portion arranged on the portion where the first transfer electrode 12 and the second transfer electrode 13 are laminated (hereinafter, referred to as a laminated portion) shown in the CC ′ cross section of FIG. Part, that is, the first transfer electrode 12 and the second transfer electrode 12 shown in the BB ′ cross section of FIG.
The transfer electrode 13 is formed to have a width smaller than the width W 2 of a portion where the transfer electrode 13 is not laminated (hereinafter, referred to as a single layer portion).
【００１１】上記積層部上の幅Ｗ1 は、シャント配線１
５の幅よりも大きい範囲で、かつ上記単層部上の幅Ｗ2
よりも細く設定される。そして、例えば、少なくともシ
ャント配線１５の上方の肩部と第２転送電極１３の上方
の肩部とを結ぶ線よりも内側に緩衝膜１４の上方の肩部
が位置する程度に、上記積層部上の幅Ｗ1 が設定され
る。また、上記単層部上の幅Ｗ2 は、従来と同程度であ
り、第１転送電極１２及び第２転送電極１３の幅よりも
小さくシャント配線１５の幅よりも大きい範囲で、かつ
絶縁膜２３に形成される第１コンタクト部１６に対する
当該緩衝膜１４の合わせ余裕を加味した値に設定されて
いる。The width W 1 on the laminated portion is equal to the shunt wiring 1
The width W 2 in the range larger than the width of 5 and above the single layer portion.
It is set thinner than. Then, for example, to the extent that the upper shoulder portion of the buffer film 14 is located inside the line connecting at least the upper shoulder portion of the shunt wiring 15 and the upper shoulder portion of the second transfer electrode 13, the above-mentioned laminated portion is formed. Width W 1 is set. In addition, the width W 2 on the single layer portion is about the same as the conventional one, and is smaller than the widths of the first transfer electrode 12 and the second transfer electrode 13 and larger than the width of the shunt wiring 15 and the insulating film. The value is set in consideration of the alignment margin of the buffer film 14 with respect to the first contact portion 16 formed in 23.
【００１２】また、ここで重要となるのは、上記第１コ
ンタクト部１６と第２コンタクト部１７とを、単層部上
における各絶縁膜２３，２４及び層間絶縁膜２５に配置
することである。これによって、固体撮像素子１を製造
する際の第１コンタクト部１６に対する緩衝膜１４の合
わせ余裕及び緩衝膜１４に対する第２コンタクト部１７
の合わせ余裕を確保し、プロセスのバラツキに起因する
歩留まりの劣化を防止する。Further, what is important here is to dispose the first contact portion 16 and the second contact portion 17 in the respective insulating films 23 and 24 and the interlayer insulating film 25 on the single layer portion. . Accordingly, the alignment margin of the buffer film 14 with respect to the first contact portion 16 and the second contact portion 17 with respect to the buffer film 14 when manufacturing the solid-state imaging device 1.
The alignment margin is secured to prevent the yield from deteriorating due to process variations.
【００１３】上記構成の固体撮像素子１では、低抵抗の
シャント配線１５を各第１転送電極１２と各第２転送電
極１３とに接合させたことによって高速動作が確保され
る。また、シャント配線１５と第１転送電極１２または
第２転送電極１３とは緩衝膜１４を介して接続されるた
め、シャント配線１５を構成するアルミニウムが各転送
電極のコンタクト部分で第１転送電極１２、または第２
転送電極１３と接触することにより生じるポテンシャル
シフトを防止できる。そして、第１転送電極１２と第２
転送電極１３との積層部上における緩衝膜１４の線幅Ｗ
1 は、その他の単層部上における緩衝膜１４の線幅Ｗ1
よりも細く設定されている。このことから、上記積層部
分では、緩衝膜１４を覆う遮光膜２８の肩部ｂの張り出
しが小さくなり、受光領域１１に集光される光ｈがこの
部分で“けられ”ることが防止される。したがって、受
光領域１１の側周壁が他の部分と比較して特に高い上記
積層部において、受光領域１１に対する実効的な集光角
度を広げることができる。In the solid-state image pickup device 1 having the above structure, high-speed operation is ensured by bonding the low resistance shunt wiring 15 to each first transfer electrode 12 and each second transfer electrode 13. Further, since the shunt wiring 15 and the first transfer electrode 12 or the second transfer electrode 13 are connected via the buffer film 14, the aluminum forming the shunt wiring 15 is connected to the first transfer electrode 12 at the contact portion of each transfer electrode. Or second
It is possible to prevent potential shift caused by contact with the transfer electrode 13. Then, the first transfer electrode 12 and the second
Line width W of the buffer film 14 on the laminated portion with the transfer electrode 13
1 is the line width W 1 of the buffer film 14 on the other single layer portion
It is set thinner than. Therefore, in the laminated portion, the protrusion of the shoulder portion b of the light shielding film 28 covering the buffer film 14 becomes small, and the light h focused on the light receiving region 11 is prevented from being “viked” at this portion. It Therefore, the effective converging angle with respect to the light receiving region 11 can be widened in the above-mentioned laminated portion in which the side peripheral wall of the light receiving region 11 is particularly higher than the other portions.
【００１４】上記第１例では、緩衝膜１４の線幅のみを
上記積層部上で細くする場合を説明した。しかし、本発
明では、緩衝膜１４とシャント配線１５との両方を、上
記積層部上でその他の部分よりも細く設定しても良い。
この際、上記積層部上におけるシャント配線１５の線幅
は、例えばシャント配線１５自体の導電性を保てる程度
の範囲内で細くする。また、上記積層部上における緩衝
膜１４の線幅は、当該積層部におけるシャント配線１５
の線幅を越えない範囲で細くする。この際、遮光膜２８
として用いるアルミニウムの成膜の特性を考慮すること
も重要になる。すなわち、一般的に行われているスパッ
タ成膜によってアルミニウムからなる遮光膜２８を成膜
した場合、当該遮光膜２８は下地のエッジ部分が強調さ
れた表面形状になる。このため、緩衝膜１４及びシャン
ト配線１５からの第２転送電極１３の上方の肩部の張り
出しが大きい場合には、第２転送電極１３の上方の肩部
が特に強調される場合がある。このため、積層部上にお
ける緩衝膜１４とシャント配線１５との線幅は、第２転
送電極１３の上方の肩部が特に強調されることのない範
囲で細くする。この場合、緩衝膜１４の第１コンタクト
部１６に対する合わせ余裕と、シャント配線１５の第２
コンタクト部１７に対する合わせ余裕とを確保した状態
で、上記積層部分における光の“けられ”を減少させて
受光領域１１に対する集光角度を広げることが可能にな
る。In the first example, the case where only the line width of the buffer film 14 is thinned on the laminated portion has been described. However, in the present invention, both the buffer film 14 and the shunt wiring 15 may be set to be thinner than the other portions on the laminated portion.
At this time, the line width of the shunt wiring 15 on the laminated portion is narrowed within a range in which the conductivity of the shunt wiring 15 itself can be maintained. In addition, the line width of the buffer film 14 on the laminated portion is the shunt wiring 15 on the laminated portion.
Make it thin within the line width of. At this time, the light shielding film 28
It is also important to consider the characteristics of the aluminum film used as the film. That is, when the light-shielding film 28 made of aluminum is formed by the commonly used sputter film formation, the light-shielding film 28 has a surface shape in which the edge portion of the base is emphasized. Therefore, when the shoulder portion above the second transfer electrode 13 overhangs from the buffer film 14 and the shunt wiring 15 is large, the shoulder portion above the second transfer electrode 13 may be particularly emphasized. For this reason, the line width between the buffer film 14 and the shunt wiring 15 on the stacked portion is narrowed within a range in which the shoulder above the second transfer electrode 13 is not particularly emphasized. In this case, the alignment margin of the buffer film 14 with respect to the first contact portion 16 and the second margin of the shunt wiring 15
In the state where the alignment margin with respect to the contact portion 17 is secured, it is possible to reduce the “vignetting” of light in the above-mentioned laminated portion and widen the light collection angle with respect to the light receiving region 11.
【００１５】また、本発明では、上記の２例の他にも、
シャント配線１５の線幅のみを上記積層部分上で細く設
定した場合でも上記と同様の効果が得られる。これは、
例えばポリシリコンの上面に上記ポテンシャルシフトを
防止するためのバリアメタルを形成してなる第１転送電
極１２及び第２転送電極１３を用いる構成の固体撮像素
子にも同様に適用される。このような固体撮像素子で
は、シャント配線１５と第１転送電極１２及び第２転送
電極１３との間に緩衝膜１４が配置されないため、上記
積層部分上にはシャント配線１５のみが配置される。そ
して、このような構成の固体撮像素子において、上記積
層部上におけるシャント配線１５部分の線幅をその他部
分の線幅よりも狭くした場合でも、上記と同様の効果が
えられる。In the present invention, in addition to the above two examples,
Even when only the line width of the shunt wiring 15 is set thin on the laminated portion, the same effect as described above can be obtained. this is,
For example, it is similarly applied to a solid-state image sensor having a structure in which a first transfer electrode 12 and a second transfer electrode 13 each having a barrier metal for preventing the above potential shift are formed on the upper surface of polysilicon. In such a solid-state imaging device, since the buffer film 14 is not arranged between the shunt wiring 15 and the first transfer electrode 12 and the second transfer electrode 13, only the shunt wiring 15 is arranged on the laminated portion. Then, in the solid-state imaging device having such a configuration, even when the line width of the shunt wiring 15 portion on the laminated portion is made narrower than the line width of the other portion, the same effect as above can be obtained.
【００１６】[0016]
【発明の効果】以上説明したように本発明の固体撮像素
子によれば、シャント配線を有するＣＣＤ固体撮像素子
において、シャント配線及びこの下の緩衝膜の少なくと
も何方か一方を転送電極の積層部上に位置する部分の線
幅をその他の部分の線幅よりも細く形成したものとする
ことで、受光領域の側周壁において上記積層部上のシャ
ント配線や緩衝膜の受光領域側へ張り出しを抑え、受光
領域に入射される光が上記の張り出し部分を覆う遮光膜
の肩部で“けられ”ることを防止することが可能にな
る。このため、各受光領域の感度を向上させることが可
能になると共に各受光領域毎の感度の均一性を確保する
ことが可能になる。As described above, according to the solid-state image pickup device of the present invention, in the CCD solid-state image pickup device having the shunt wiring, at least one of the shunt wiring and the buffer film below the shunt wiring is formed on the laminated portion of the transfer electrodes. By forming the line width of the portion located in the thinner than the line width of the other portion, in the side peripheral wall of the light-receiving region to suppress the shunt wiring on the laminated portion and the protrusion of the buffer film to the light-receiving region side, It is possible to prevent the light incident on the light receiving region from being “violated” at the shoulder portion of the light shielding film that covers the protruding portion. For this reason, it is possible to improve the sensitivity of each light receiving region and to ensure the uniformity of the sensitivity of each light receiving region.
【図１】本発明の固体撮像素子の一例を示す要部平面図
である。FIG. 1 is a plan view of an essential part showing an example of a solid-state imaging device of the present invention.
【図２】図１におけるＢ−Ｂ’断面図である。FIG. 2 is a sectional view taken along the line B-B ′ in FIG.
【図３】図１におけるＣ−Ｃ’断面図である。3 is a cross-sectional view taken along the line C-C ′ in FIG.
【図４】従来の固体撮像素子を示す要部平面図である。FIG. 4 is a main part plan view showing a conventional solid-state imaging device.
【図５】図４におけるＡ−Ａ’断面図である。5 is a cross-sectional view taken along the line A-A ′ in FIG.
１ 固体撮像素子 １１ 受光領域 １２ 第１転送電極（転送電極） １３ 第２転送電極（転送電極） １４ 緩衝膜 １５ シャント配線 ２１ 基板 ２８ 遮光膜 ２８ａ 開口部 1 Solid-State Image Sensor 11 Light-Receiving Area 12 First Transfer Electrode (Transfer Electrode) 13 Second Transfer Electrode (Transfer Electrode) 14 Buffer Film 15 Shunt Wiring 21 Substrate 28 Light-Shielding Film 28a Opening
Claims (2)
端辺を互いに積層させた状態で前記受光領域脇の前記基
板上に配列された複数の転送電極と、当該転送電極上に
緩衝膜を介して形成されたシャント配線と、前記受光領
域上に開口部を有し前記転送電極，緩衝膜及びシャント
配線を覆う状態で前記基板上に形成された遮光膜とを備
えてなる固体撮像素子において、 前記緩衝膜及び前記シャント配線のうちの少なくとも何
方か一方は、前記転送電極の積層部上に位置する部分の
線幅が、その他の部分の線幅よりも細く形成されたもの
であることを特徴とする固体撮像素子。1. A light-receiving region formed on the front surface side of a substrate,
A plurality of transfer electrodes arranged on the substrate beside the light receiving region in a state where the edges are stacked on each other, a shunt wiring formed on the transfer electrodes via a buffer film, and an opening on the light receiving region. A solid-state imaging device comprising a transfer electrode, a buffer film, and a light-shielding film formed on the substrate in a state of covering the shunt wire and at least one of the buffer film and the shunt wire. The solid-state imaging device is characterized in that the line width of a portion located on the laminated portion of the transfer electrodes is formed to be narrower than the line width of other portions.
端辺を互いに積層させた状態で前記受光領域脇の前記基
板上に配列された複数の転送電極と、当該転送電極上に
形成されたシャント配線と、前記受光領域上に開口部を
有し前記転送電極及びシャント配線を覆う状態で前記基
板上に形成された遮光膜とを備えてなる固体撮像素子に
おいて、 前記シャント配線は、前記転送電極の積層部上に位置す
る部分の線幅がその他の部分の線幅よりも細く形成され
たものであることを特徴とする固体撮像素子。2. A light receiving region formed on the front surface side of the substrate,
A plurality of transfer electrodes arranged on the substrate at the side of the light receiving region in a state where the edges are stacked on each other, shunt wiring formed on the transfer electrodes, and an opening on the light receiving region. In a solid-state imaging device comprising a transfer electrode and a light-shielding film formed on the substrate in a state of covering the shunt wiring, the shunt wiring has a line width other than that of a portion located on a stacked portion of the transfer electrodes. A solid-state image sensor characterized by being formed thinner than the line width of a part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20194995A JP3365159B2 (en) | 1995-08-08 | 1995-08-08 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20194995A JP3365159B2 (en) | 1995-08-08 | 1995-08-08 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0951086A true JPH0951086A (en) | 1997-02-18 |
| JP3365159B2 JP3365159B2 (en) | 2003-01-08 |
Family
ID=16449454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20194995A Expired - Fee Related JP3365159B2 (en) | 1995-08-08 | 1995-08-08 | Solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3365159B2 (en) |
-
1995
- 1995-08-08 JP JP20194995A patent/JP3365159B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP3365159B2 (en) | 2003-01-08 |
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