JPH06140617A - Solid-state image sensing device - Google Patents

Abstract

PURPOSE:To prevent smear and improve sensitivity by changing a shape and layout position of an aperture provided on a shielding film on a sensor of a solid-state image sensing device. CONSTITUTION:In a solid-state imaging 10 providing an aperture 18 at a light shielding film 17 provided at the upper part of a sensor 12 arranged between signal lines 13, 14 to which a high bias is applied during the period other than the vertical transfer period and signal lines 15, 16 to which a low bias is applied during the period other than the vertical transfer period, the aperture 18 in the side of signal lines 13, 14 to which a high bias is applied is formed wider than the aperture 18 in the side of the signal lines 15, 16 to which a low bias is applied. Or, an electrode connected to the signal line 15 is formed in the proximity to the side portion of the aperture 18. Otherwise, the paper ture 18 is also formed so that the distance between the aperture 18 and signal line 16 is set shorter than the distance between the aperture 18 and signal line 14.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device having a light-shielding film having an opening formed on a sensor.

[0002]

2. Description of the Related Art A conventional CCD (Charge-Coupled Devic)
e) For solid-state imaging devices, as a means for preventing smear,
A dimensional margin is provided between the opening on the sensor formed on the light-shielding film made of aluminum and the poly-Si signal line or the poly-Si electrode, and the signal charge is provided below the poly-Si signal line or the poly-Si electrode. The smear component generated due to the mixture of the was prevented. The dimensional allowances are set so as to sandwich the opening, and the opposing dimensional allowances are set to have the same length.

[0003]

However, in the smear preventing means having the above-described structure, the opening portion on the sensor portion and the p-shaped portion are not formed.
A dimensional margin is required between the poly-Si signal line and the poly-Si electrode. Therefore, the size of the opening on the sensor is reduced, so that the amount of light incident on the sensor is reduced and the sensitivity characteristic is degraded.

It is an object of the present invention to provide a solid-state image pickup device which prevents smear and has excellent sensitivity characteristics.

[0005]

SUMMARY OF THE INVENTION The present invention is a solid-state imaging device made to achieve the above object. That is,
A light-shielding film is provided, and an opening is provided in the light-shielding film above the sensor between the signal line to which a high bias is applied except during vertical transfer and the signal line to which a low bias is applied during other than vertical transfer. In the solid-state imaging device, the opening on the signal line side to which a high bias is applied is formed wider than the opening on the signal line side to which a low bias is applied. Alternatively, the electrode connected to the signal line to which the low bias is applied is formed in a state of being brought close to the side of the opening. Alternatively, the opening is formed such that the distance between the opening and the signal line to which the low bias is applied is shorter than the distance between the opening and the signal line to which the high bias is applied.

The opening on the signal line side to which the high bias is applied is formed wider than the opening on the signal line side to which the low bias is applied, and the opening and the signal line to which the low bias is applied are formed. The opening is formed such that the distance is shorter than the distance between the opening and the signal line to which the high bias is applied. Alternatively, the electrode connected to the signal line to which the low bias is applied is formed in a state of being brought close to the side portion of the opening, and the distance between the opening and the signal line to which the low bias is applied is set to The opening is formed in a state shorter than the distance to the signal line to which the high bias is applied.

[0007]

In the solid-state image pickup device having the above structure, the dimensional margin between the opening on the sensor section and the signal line can be provided only in a necessary portion. As a result, the area of the opening is enlarged, so that the amount of light incident on the sensor is increased.
Therefore, the sensitivity characteristic of the sensor is improved. Further, since a dimensional margin is provided between the opening and the signal line on the side of the signal line to which a high bias that easily causes smear is applied, the occurrence of smear is prevented.

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described with reference to the layout diagram shown in FIG. As shown in FIG.
The sensors 12 are arranged in a matrix. A signal line 13, (or 14) to which a high bias is applied to one side of each sensor 12 except during vertical transfer [hereinafter signal line 1
3 (or signal line 14)] is formed.
Further, on the other side of each sensor 12, a signal line 15 (or 16) [hereinafter referred to as signal line 15 (or signal line 16)] to which a low bias is applied except during vertical transfer is formed. Further, a light-shielding film 1 is provided through an interlayer insulating film (not shown).
7 is deposited.

An opening 18 is formed in the light shielding film 17 on each sensor 12. This opening 18 is for the signal line 1
Signal line 15 (or 16) from the 3 (or 14) side
The sides are wider. That is, it is formed in a substantially convex shape. The solid-state imaging device 10 is configured as described above. The illustration of the diffusion layer region of the charge transfer portion formed on the substrate 11, the channel stopper region, and the like are omitted.

The shape of the opening 18 may be any shape as long as it satisfies the above conditions, and it may be formed into, for example, a substantially trapezoidal shape or a substantially triangular shape. Since the opening 18 is normally formed by photolithography and etching, the corners are rounded.

In the solid-state image pickup device 10 having the above-mentioned structure, the width of the opening 18 on the signal line 15 (or 16) side to which a low bias is applied is set to be high except during vertical transfer in which smear is unlikely to occur. A signal line 13 to which a bias is applied,
By forming the opening 18 wider than the (or 14) side, the area of the opening 18 is enlarged. As a result, the amount of light incident on the sensor increases, so that the sensitivity characteristic of the sensor is improved. At the same time, since a sufficient dimensional margin is provided between the signal line 13 (or 14) and the opening 18, smear is less likely to occur.

Next, a second embodiment will be described with reference to the layout diagram of FIG. The same components as those connected in FIG. 1 are designated by the same reference numerals. As shown in FIG.
The sensors 12 are arranged in a matrix. A signal line 13, (or 14) to which a high bias is applied to one side of each sensor 12 except during vertical transfer [hereinafter signal line 1
3 (or signal line 14)] is formed.
Further, on the other side of each sensor 12, a signal line 15 (or 16) [hereinafter referred to as signal line 15 (or signal line 16)] to which a low bias is applied except during vertical transfer is formed. Further, a light-shielding film 1 is provided through an interlayer insulating film (not shown).
7 is deposited.

An opening 18 is formed in the light shielding film 17 on each sensor 12. In addition, the signal line 15 has an electrode 2
1, 22 are connected to each other, and the electrodes 21, 22 are arranged in a state of being brought close to the side portion of the opening 18. For example, the dimensional margin a1 is hardly set between the electrodes 21 and 22 and the opening 18. Even if the dimensional margin a1 is set, its value is, for example, 0.0 μm to 0.
It is about 5 μm. On the other hand, the electrode 2 is connected to the signal line 14.
3, 24 are connected, and a sufficient dimensional margin a2 is set between each of the electrodes 23, 24 and the side of the opening 18 so that smear does not occur. For example, the dimensional margin is 0. The distance is set to about several μm to 1.0 μm. The solid-state imaging device 20 is configured as described above.
The illustration of the diffusion layer region of the charge transfer portion formed on the substrate 11, the channel stopper region, and the like are omitted.

In the solid-state image pickup device 20 having the above structure, the electrodes 21 and 22 are arranged in the state of being brought close to the side portions of the opening 18, so that the amount of charge handled by the vertical register increases. The amount of charge that can be accumulated increases. For this reason, the saturation signal amount increases, and for example
The ratio becomes higher.

Next, a third embodiment will be described with reference to the layout diagram of FIG. The same components as those connected in FIG. 1 are designated by the same reference numerals. As shown in FIG.
The sensors 12 are arranged in a matrix. A signal line 13, (or 14) to which a high bias is applied to one side of each sensor 12 except during vertical transfer [hereinafter signal line 1
3 (or signal line 14)] is formed.
Further, on the other side of each sensor 12, a signal line 15 (or 16) [hereinafter referred to as signal line 15 (or signal line 16)] to which a low bias is applied except during vertical transfer is formed. Further, a light-shielding film 1 is provided through an interlayer insulating film (not shown).
7 is deposited.

An opening 18 is formed in the light shielding film 17 on each sensor 12. The opening 18 and the signal line 1
Between 6 and 6, there is almost no dimensional margin b1. Even if the dimensional margin b1 is set, its value is, for example, about 0.0 μm to 0.5 μm. On the other hand, a sufficient dimensional margin b2 that does not generate smear is set between the signal line 14 and the signal line 14. This dimensional margin b2 is, for example, 0. It is set to about several μm to 1.0 μm. The solid-state imaging device 30 is configured as described above. The illustration of the diffusion layer region of the charge transfer portion formed on the substrate 11, the channel stopper region, and the like are omitted.

In the solid-state imaging device 30 having the above structure, the dimensional margin b1 on the signal line 16 side where smear is less likely to occur is almost eliminated, and the dimensional margin b on the signal line 14 side where smear is likely to occur.
By providing 2 and forming the opening 18, smear is less likely to occur.

Next, a fourth embodiment will be described with reference to the layout diagram of FIG. The same components as those connected in FIG. 1 are designated by the same reference numerals. As shown in FIG.
The sensors 12 are arranged in a matrix. A signal line 13, (or 14) to which a high bias is applied to one side of each sensor 12 except during vertical transfer [hereinafter signal line 1
3 (or signal line 14)] is formed.
Further, on the other side of each sensor 12, a signal line 15 (or 16) [hereinafter referred to as signal line 15 (or signal line 16)] to which a low bias is applied except during vertical transfer is formed. Further, a light-shielding film 1 is provided through an interlayer insulating film (not shown).
7 is deposited.

An opening 18 is formed in the light shielding film 17 on each sensor 12. The opening 18 is provided in the signal line 14
The signal line 16 side is formed wider than the side. That is, the opening 18 is formed in a substantially convex shape. Moreover, there is almost no dimensional margin b1 between the opening 18 and the signal line 16. Even if the dimensional margin b1 is set, its value is, for example, 0.0.
It is about μm to 0.5 μm. On the other hand, a sufficient dimensional margin b2 that does not generate smear is set between the signal line 14 and the signal line 14. This dimensional margin b2 is, for example, 0. Several μm
It is set to about 1.0 μm. The solid-state imaging device 40 is configured as described above. The illustration of the diffusion layer region of the charge transfer portion formed on the substrate 11, the channel stopper region, and the like are omitted.

In the solid-state image pickup device 40 having the above structure, the width of the opening 18 on the signal line 16 side to which a low bias is applied except during vertical transfer is set to the signal line 14 side to which a high bias is applied during other than vertical transfer. By forming the opening 18 wider than the above, the area of the opening 18 is enlarged. As a result, the amount of light incident on the sensor 12 increases, so that the sensitivity characteristic of the sensor 12 improves. At the same time, since a sufficient dimensional margin b2 is provided between the signal line 14 and the opening 18, smear is less likely to occur.

Next, a fifth embodiment will be described with reference to the layout diagram of FIG. The same components as those connected in FIG. 1 are designated by the same reference numerals. As shown in FIG.
The sensors 12 are arranged in a matrix. A signal line 13, (or 14) to which a high bias is applied to one side of each sensor 12 except during vertical transfer [hereinafter signal line 1
3 (or signal line 14)] is formed.
Further, on the other side of each sensor 12, a signal line 15 (or 16) [hereinafter referred to as signal line 15 (or signal line 16)] to which a low bias is applied except during vertical transfer is formed. Further, a light-shielding film 1 is provided through an interlayer insulating film (not shown).
7 is deposited.

An opening 18 is formed in the light shielding film 17 on each sensor 12. In addition, the signal line 15 has an electrode 2
1, 22 are connected to each other, and the electrodes 21, 22 are arranged in a state of being brought close to the side portion of the opening 18. For example, the dimensional margin a1 is hardly set between the electrodes 21 and 22 and the opening 18. Even if the dimensional margin a1 is set, its value is, for example, 0.0 μm to 0.
It is about 5 μm. On the other hand, the electrode 2 is connected to the signal line 14.
3, 24 are connected, and a sufficient dimensional margin a2 is set between each of the electrodes 23, 24 and the side of the opening 18 so that smear does not occur. For example, the dimensional margin is 0. The distance is set to about several μm to 1.0 μm.

Moreover, there is almost no dimensional margin b1 between the opening 18 and the signal line 16. Even if the dimensional margin b1 is set, its value is, for example, about 0.0 μm to 0.5 μm. On the other hand, a sufficient dimensional margin b2 that does not generate smear is set between the signal line 14 and the signal line 14. This dimensional margin b2 is, for example, 0. It is set to about several μm to 1.0 μm. The solid-state imaging device 50 is configured as described above. The illustration of the diffusion layer region of the charge transfer portion formed on the substrate 11, the channel stopper region, and the like are omitted.

In the solid-state image pickup device 50 having the above structure, the electrodes 21 and 22 are arranged in the state of being brought close to the side of the opening 18, so that the amount of electric charge handled by the vertical register increases, so that the sensor 12 is provided. The amount of charge that can be accumulated increases. For this reason, the saturation signal amount increases, and for example
The ratio becomes higher. Moreover, since the dimensional margin b1 on the signal line 16 side is almost eliminated and the dimensional margin b2 is provided on the signal line 14 side to form the opening 18, smear is less likely to occur.

[0025]

As described above, according to the present invention,
It becomes possible to provide a dimensional margin between the opening on the sensor and the signal line or the electrode only in a portion necessary for preventing the occurrence of smear. As a result, the area of the opening is enlarged, so that the amount of light incident on the sensor is increased. Therefore, the sensitivity characteristic of the sensor is improved. Further, since a dimensional margin is provided between the opening and the signal line on the signal line side to which a high bias is applied, which is likely to cause smear, the smear can be prevented. In this case, since the opening is provided in a state where there is almost no dimensional margin between the signal line to which a low bias is applied in which smear is less likely to occur and the opening, the area of the opening is not reduced. Therefore, it is possible to maintain a predetermined sensitivity.

[Brief description of drawings]

FIG. 1 is a layout diagram of a first embodiment.

FIG. 2 is a layout diagram of a second embodiment.

FIG. 3 is a layout diagram of a third embodiment.

FIG. 4 is a layout diagram of a fourth embodiment.

FIG. 5 is a layout diagram of a fifth embodiment.

[Explanation of symbols]

 10 solid-state imaging device 12 sensor 13 signal line 14 signal line 15 signal line 16 signal line 17 light-shielding film 18 opening 20 solid-state imaging device 21 electrode 22 electrode 30 solid-state imaging device 40 solid-state imaging device 50 solid-state imaging device

Claims (5)

[Claims] 1. A light-shielding film provided above a sensor between a signal line to which a high bias is applied except during vertical transfer and a signal line to which a low bias is applied during other than vertical transfer. In the solid-state imaging device having an opening in the solid-state imaging device, the opening on the signal line side to which the high bias is applied is formed wider than the opening on the signal line side to which the low bias is applied. Imaging device. 2. A light-shielding film provided above the sensor between a signal line to which a high bias is applied except during vertical transfer and a signal line to which a low bias is applied during other than vertical transfer. In the solid-state image pickup device having an opening, the solid-state image pickup device is formed such that an electrode connected to the signal line to which the low bias is applied is brought close to a side portion of the opening. 3. A light-shielding film provided above the sensor between a signal line to which a high bias is applied except during vertical transfer and a signal line to which a low bias is applied during other than vertical transfer. In the solid-state imaging device having an opening, the distance between the opening and the signal line to which the low bias is applied is shorter than the distance between the opening and the signal line to which the high bias is applied. A solid-state imaging device having an opening formed therein. 4. A light-shielding film provided above the sensor between a signal line to which a high bias is applied except during vertical transfer and a signal line to which a low bias is applied during other than vertical transfer. In the solid-state imaging device having an opening, the opening on the signal line side to which the high bias is applied is formed wider than the opening on the signal line side to which the low bias is applied, and The solid-state imaging device, wherein the opening is formed such that the distance to the signal line to which the low bias is applied is shorter than the distance between the opening and the signal line to which the high bias is applied. 5. A light-shielding film provided above the sensor between a signal line to which a high bias is applied except during vertical transfer and a signal line to which a low bias is applied during other than vertical transfer. In a solid-state imaging device having an opening in, while forming an electrode connected to the signal line to which the low bias is applied close to the side of the opening,
The opening is formed such that the distance between the opening and the signal line to which the low bias is applied is shorter than the distance between the opening and the signal line to which the high bias is applied. Solid-state imaging device.