JPH0950969A - Beam facing plate for semiconductor manufacturing device and its manufacture - Google Patents
Beam facing plate for semiconductor manufacturing device and its manufactureInfo
- Publication number
- JPH0950969A JPH0950969A JP7199659A JP19965995A JPH0950969A JP H0950969 A JPH0950969 A JP H0950969A JP 7199659 A JP7199659 A JP 7199659A JP 19965995 A JP19965995 A JP 19965995A JP H0950969 A JPH0950969 A JP H0950969A
- Authority
- JP
- Japan
- Prior art keywords
- beam facing
- plate
- carbon
- semiconductor manufacturing
- heat sink
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 239000004065 semiconductor Substances 0.000 title claims description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 230000001681 protective effect Effects 0.000 claims abstract description 14
- 239000003575 carbonaceous material Substances 0.000 claims description 13
- 238000005219 brazing Methods 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 12
- 230000003628 erosive effect Effects 0.000 abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052709 silver Inorganic materials 0.000 abstract description 5
- 229910052802 copper Inorganic materials 0.000 abstract description 4
- 229910052719 titanium Inorganic materials 0.000 abstract description 4
- 229910000838 Al alloy Inorganic materials 0.000 abstract description 3
- 229910000881 Cu alloy Inorganic materials 0.000 abstract description 3
- 229910052763 palladium Inorganic materials 0.000 abstract description 3
- 229910052790 beryllium Inorganic materials 0.000 abstract description 2
- 229910052735 hafnium Inorganic materials 0.000 abstract description 2
- 229910052758 niobium Inorganic materials 0.000 abstract description 2
- 239000010935 stainless steel Substances 0.000 abstract description 2
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 2
- 229910052721 tungsten Inorganic materials 0.000 abstract description 2
- 229910052720 vanadium Inorganic materials 0.000 abstract description 2
- 229910052726 zirconium Inorganic materials 0.000 abstract description 2
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 239000002131 composite material Substances 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 238000010298 pulverizing process Methods 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000004898 kneading Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005087 graphitization Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910017944 Ag—Cu Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910021383 artificial graphite Inorganic materials 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007750 plasma spraying Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229910017489 Cu I Inorganic materials 0.000 description 1
- 229910017566 Cu-Mn Inorganic materials 0.000 description 1
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910017871 Cu—Mn Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007723 die pressing method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- -1 pitch Chemical compound 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000011269 tar Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体製造装置
（イオン注入装置、高エネルギー注入装置等）におい
て、電子ビーム、イオンビーム等のアパーチャー、ビー
ム電流モニター又は保護板として利用される半導体製造
装置用ビーム対向板及びその製造法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus (ion implantation apparatus, high-energy implantation apparatus, etc.) which is used as an aperture for an electron beam, an ion beam or the like, a beam current monitor or a protective plate. TECHNICAL FIELD The present invention relates to a beam facing plate and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】イオン注入装置、高エネルギー注入装置
等の半導体製造装置において、電子ビーム、イオンビー
ム等のアパーチャー及び保護板には、カーボン材料が使
用されている。カーボン材は耐熱性が高く、エロージョ
ンが少ないので使用されているが、装置の熱負荷の増大
にともない、エロージョンの増大が問題となり始めてい
る。カーボン材は、不活性雰囲気では、３０００℃の耐
熱性を有するが、高真空中では、２０００℃以上で昇華
が始まり、さらにイオン、電子に照射される雰囲気で
は、１０００℃以上で照射により促進された昇華が起こ
ることが知られている。2. Description of the Related Art In semiconductor manufacturing equipment such as ion implanters and high energy implanters, carbon materials are used for apertures and protective plates for electron beams and ion beams. Carbon materials are used because they have high heat resistance and little erosion, but as the heat load of the device increases, the increase in erosion is becoming a problem. The carbon material has a heat resistance of 3000 ° C. in an inert atmosphere, but sublimation starts at 2000 ° C. or higher in a high vacuum, and is accelerated by irradiation at 1000 ° C. or higher in an atmosphere irradiated with ions and electrons. Sublimation is known to occur.
【０００３】カーボン製の保護板は、一般にボルト等で
装置内に取り付けられているが、ビームにより加熱さ
れ、高温になり、損耗する。カーボン材の熱容量は、体
積あたり１．３Ｊ／Ｋ・ｃｍ3と小さく、表面温度が簡
単に上昇してしまい、かつ、ボルトで締結された部分
は、接触熱抵抗があるため、その熱を除去するのが容易
でない。The protective plate made of carbon is generally attached to the inside of the apparatus with bolts or the like, but it is heated by the beam, becomes high in temperature, and is worn. The heat capacity of the carbon material is as small as 1.3 J / K · cm 3 per volume, the surface temperature easily rises, and the portion fastened with bolts has contact thermal resistance, so the heat is removed. Not easy to do.
【０００４】[0004]
【発明が解決しようとする課題】請求項１記載の発明
は、エロージョン対策として、熱負荷による表面温度上
昇を抑制した半導体製造装置用ビーム対向板を提供する
ものである。請求項２記載の発明は、請求項１記載の発
明の解決する課題のほかに金属との接合性に優れる半導
体製造装置用ビーム対向板を提供するものである。請求
項３記載の発明は、エロージョン対策として、熱負荷に
よる表面温度上昇を抑制した半導体製造装置用ビーム対
向板の製造法を提供するものである。As a measure against erosion, the invention according to claim 1 provides a beam facing plate for a semiconductor manufacturing apparatus in which an increase in surface temperature due to a heat load is suppressed. In addition to the problem to be solved by the invention described in claim 1, the invention described in claim 2 provides a beam facing plate for a semiconductor manufacturing apparatus, which has excellent bondability with a metal. As a measure against erosion, the invention according to claim 3 provides a method of manufacturing a beam facing plate for a semiconductor manufacturing apparatus in which a surface temperature rise due to a heat load is suppressed.
【０００５】[0005]
【課題を解決するための手段】本発明は、ビーム対向面
とするカーボン保護板の裏面に金属のヒートシンクが接
合されてなる半導体製造装置用ビーム対向板に関する。
また本発明は、前記ビーム対向面とするカーボン保護板
が、熱膨張率が４×１０-6／℃〜１５×１０-6／℃のカ
ーボン材である半導体製造装置用ビーム対向板に関す
る。さらに本発明は、ビーム対向面とするカーボン保護
板の裏面に金属をヒートシンクとして冶金的に接合する
ことを特徴とする半導体製造装置用ビーム対向板の製造
法に関する。The present invention relates to a beam facing plate for a semiconductor manufacturing apparatus in which a metal heat sink is bonded to the back surface of a carbon protective plate serving as a beam facing surface.
Further, the present invention relates to a beam facing plate for a semiconductor manufacturing apparatus, wherein the carbon protective plate serving as the beam facing surface is a carbon material having a coefficient of thermal expansion of 4 × 10 −6 / ° C. to 15 × 10 −6 / ° C. Further, the present invention relates to a method of manufacturing a beam facing plate for a semiconductor manufacturing apparatus, characterized in that metal is metallurgically bonded as a heat sink to a back surface of a carbon protective plate which is a beam facing surface.
【０００６】[0006]
【発明の実施の形態】本発明は、ビーム対向面としてカ
ーボン材を用いる。用いるカーボン材は、一般に知られ
ている等方性や異方性の人造黒鉛材、炭素繊維強化炭素
複合材（Ｃ／Ｃ複合材）等の炭素材料からなるものであ
り、特に制限はない。一般に知られる人造黒鉛材は、コ
ークス粉、黒鉛粉、カーボンブラック等の骨材、ター
ル、ピッチ等の結合材を材料として用い、一般に捏和、
粉砕、成形、焼成、黒鉛化の各工程を経て製造される。BEST MODE FOR CARRYING OUT THE INVENTION The present invention uses a carbon material as a beam facing surface. The carbon material used is made of a generally known carbon material such as isotropic or anisotropic artificial graphite material and carbon fiber reinforced carbon composite material (C / C composite material), and is not particularly limited. Generally known artificial graphite materials include coke powder, graphite powder, aggregates such as carbon black, tar, binders such as pitch, and the like, which are generally kneaded,
It is manufactured through each process of crushing, molding, firing, and graphitization.
【０００７】捏和は、一般に双腕型ニーダー等を用い
て、各材料を、好ましくは２００〜２５０℃で、好まし
くは５〜１０時間混練することにより行われる。粉砕
は、捏和で得られたものを、各種粉砕機を用いて平均粒
子径が２０〜３０μｍになるように粉砕することにより
行われる。成形は、粉砕により得られた粉体を、金型プ
レス、ラバープレス等の方法で付形することにより行わ
れる。圧力は１０００〜１５００ｋｇ／ｃｍ2が好まし
い。The kneading is generally carried out by using a double-arm kneader or the like to knead each material at preferably 200 to 250 ° C. for preferably 5 to 10 hours. The pulverization is performed by pulverizing the product obtained by kneading using various pulverizers so that the average particle diameter becomes 20 to 30 μm. The molding is performed by shaping the powder obtained by the pulverization by a method such as a mold press, a rubber press and the like. The pressure is preferably 1000 to 1500 kg / cm 2 .
【０００８】焼成は、成形により得られた成形体を、還
元雰囲気下、好ましくは８００〜１０００℃に昇温して
行うことができる。焼成時間は、３００〜５００時間が
好ましい。還元雰囲気下で焼成する方法としては、成形
体のまわりに炭素の詰め粉を詰めて焼成する方法等があ
る。黒鉛化は、焼成により得られたものを、好ましくは
２５００〜３０００℃に昇温して行うことができる。黒
鉛化の時間は、４０〜７０時間が好ましい。さらに本発
明においては、ハロゲンガス中で、２０００〜２８００
で高純度化処理したものが好ましい。またさらに、好ま
しくは１×１０-2ｔｏｒｒ以下の真空下で、好ましくは
１０００〜２０００℃でベーキングすると、放出ガスが
少なくなり、半導体装置内を清浄に保つことができるの
で好ましい。The firing can be carried out by heating the molded body obtained by molding under a reducing atmosphere, preferably at 800 to 1000 ° C. The firing time is preferably 300 to 500 hours. As a method of firing in a reducing atmosphere, there is a method of firing by filling a powder of carbon around a compact. Graphitization can be performed by heating the product obtained by firing, preferably to 2500 to 3000 ° C. The graphitization time is preferably 40 to 70 hours. Further, in the present invention, in a halogen gas, 2000-2800
Those which have been subjected to a high-purification treatment are preferred. Furthermore, baking is preferably performed at a vacuum of 1 × 10 -2 torr or less, preferably at 1000 to 2000 ° C., because the amount of released gas is reduced and the inside of the semiconductor device can be kept clean, which is preferable.
【０００９】本発明におけるビーム対向面に用いられる
カーボン材は熱膨張率が４×１０-6／℃〜１５×１０-6
／℃であるのが金属との接合性に優れるので好ましい。
本発明において熱膨張率は、ビーム対向面に平行方向を
長軸とする５ｍｍ×５ｍｍ×１５ｍｍの直方体を試料と
し、その長軸方向（長さ１５ｍｍの方向）の線膨張率を
２０〜７００℃で測定した値とする。熱膨張率は、熱膨
張係数測定装置により測定できる。上記カーボン材は、
機械加工によりビーム対向面とするカーボン保護板に加
工される。The carbon material used for the beam facing surface in the present invention has a coefficient of thermal expansion of 4 × 10 −6 / ° C. to 15 × 10 −6.
It is preferable that the temperature is / ° C., because the bondability with a metal is excellent.
In the present invention, the coefficient of thermal expansion is a rectangular parallelepiped of 5 mm × 5 mm × 15 mm whose major axis is in the direction parallel to the beam facing surface, and the linear expansion coefficient in the major axis direction (direction of length 15 mm) is 20 to 700 ° C. Use the value measured in. The coefficient of thermal expansion can be measured by a thermal expansion coefficient measuring device. The carbon material is
It is machined into a carbon protective plate that will be the beam facing surface.
【００１０】金属製のヒートシンクを構成する金属とし
ては、銅、銅合金、アルミニウム、アルミニウム合金、
ステンレススチールなどが挙げられる。ヒートシンクを
構成する金属しては、熱容量が３．１Ｊ／Ｋ・ｃｍ3で
ある銅、２．４Ｊ／Ｋ・ｃｍ3であるアルミニウム、銅
合金又はアルミニウム合金であり、熱容量がカーボン材
の１．８〜３倍あるものが好ましい。さらに、ビームに
よる熱負荷が長時間になるものは、そのヒートシンク材
に水冷却またはガス冷却のジャケットを設けて、ヒート
シンク自体を冷却すると、さらに冷却効果が大きいので
好ましい。As the metal constituting the metal heat sink, copper, copper alloy, aluminum, aluminum alloy,
Examples include stainless steel. The metal constituting the heat sink is copper having a heat capacity of 3.1 J / K · cm 3 , aluminum having a heat capacity of 2.4 J / K · cm 3 , a copper alloy or an aluminum alloy, and the heat capacity of the carbon material is 1. It is preferably 8 to 3 times. Further, when the heat load by the beam is long, it is preferable to provide a water cooling or gas cooling jacket on the heat sink material to cool the heat sink itself, because the cooling effect is further large.
【００１１】ビーム対向面とするカーボン保護板（カー
ボン板）の裏面に上記金属製のヒートシンクを接合して
ビーム対向板を製造する方法としては、カーボン板の裏
面に金属のヒートシンクを冶金的に接合する方法が好ま
しい。これには、ろう付けによる接合、拡散接合等が挙
げられるが、本発明においては比較的低温で接合が可能
なろう付けによる接合が好ましい。ろう付けにはＡｇ、
Ａｇ−Ｃｕ、Ｐｄ、Ｐｄ−Ａｇ、Ｐｄ−Ａｇ−Ｃｕ、Ｎ
ｉ、Ｍｎ、Ｎｉ−Ｃｕ、Ｃｕ−Ｍｎ、Ａｇ−Ｃｕ−Ｉ
ｎ、Ａｇ−Ｃｕ−Ｓｎ等のろう材が用いられる。なお上
記のろう材にＴｉ、Ｚｒ、Ｈｆ、Ｂｅ、Ｗ、Ｖ、Ｎｂ、
Ｔａ等の活性金属を添加したものを用いるとろう材の濡
れ性が向上するので好ましい。ろう付けの条件は、用い
るろう材により適宜選定できる。As a method of manufacturing the beam facing plate by bonding the above-mentioned metal heat sink to the back surface of the carbon protective plate (carbon plate) to be the beam facing surface, a metal heat sink is metallurgically bonded to the back surface of the carbon plate. Is preferred. Examples of the bonding include brazing, diffusion bonding, and the like. In the present invention, brazing is preferable because it can be bonded at a relatively low temperature. Ag for brazing,
Ag-Cu, Pd, Pd-Ag, Pd-Ag-Cu, N
i, Mn, Ni-Cu, Cu-Mn, Ag-Cu-I
A brazing material such as n or Ag-Cu-Sn is used. In addition, Ti, Zr, Hf, Be, W, V, Nb,
It is preferable to use a material to which an active metal such as Ta is added, because the brazing material has improved wettability. The brazing conditions can be appropriately selected depending on the brazing material used.
【００１２】また、ろう付けの前に、例えばチタンを含
む銅粉末等をカーボン材に溶射し、表面をメタライズす
ると、接合性にさらに優れるので好ましい。メタライズ
する方法としては、プラズマ溶射、イオンプレーティン
グ、金属粉末又は金属ペーストの加熱融着等の方法があ
る。半導体製造装置用ビーム対向板には、必要に応じて
ベースメタルに固定するためのボルト穴を設けることが
できる。Further, it is preferable to spray copper powder containing titanium, for example, onto a carbon material before brazing to metallize the surface, because the bondability is further excellent. As a method for metallizing, there are methods such as plasma spraying, ion plating, and heat fusion of metal powder or metal paste. The beam facing plate for a semiconductor manufacturing apparatus may be provided with a bolt hole for fixing it to the base metal, if necessary.
【００１３】[0013]
実施例１ 日立化成工業（株）製の等方性黒鉛（商品名 ＰＤ−６
００）を４０ｍｍ×４０ｍｍ×１０ｍｍの寸法に機械加
工した。ビーム対向面に平行方向を長軸とする５ｍｍ×
５ｍｍ×１５ｍｍの直方体を試料とし、石英製の熱膨張
係数測定装置で、その長軸方向（１５ｍｍ）の線膨張率
を２０〜７００℃で測定したところ、熱膨張率５．５×
１０-6／℃であった。チタン１０重量％を含有する銅粉
末をプラズマスプレーで溶射し、４０ｍｍ×４０ｍｍの
一表面をメタライズした。それと無酸素銅板（４０ｍｍ
×４０ｍｍ×１０ｍｍ）を銀ロウ箔（材質名ＢＡｇ−
８）を介して、８００℃、１×１０-4ｔｏｒｒ以下の真
空度でロウ付し、銅接合カーボン板を得た。Example 1 Isotropic graphite (trade name PD-6 manufactured by Hitachi Chemical Co., Ltd.)
00) was machined to dimensions of 40 mm x 40 mm x 10 mm. 5 mm x with the major axis parallel to the beam facing surface
A 5 mm × 15 mm rectangular parallelepiped was used as a sample, and its linear expansion coefficient in the major axis direction (15 mm) was measured at 20 to 700 ° C. with a thermal expansion coefficient measuring device made of quartz.
It was 10 -6 / ° C. Copper powder containing 10% by weight of titanium was sprayed by plasma spraying to metallize one surface of 40 mm × 40 mm. Oxygen-free copper plate (40mm)
Silver wax foil (material name BAg-
Through 8), brazing was performed at 800 ° C. at a vacuum degree of 1 × 10 −4 torr or less to obtain a copper-bonded carbon plate.
【００１４】実施例２ 日立化成工業（株）製のＣ／Ｃ複合材（商品名 ＰＣＣ
−２Ｓ）を４０ｍｍ×４０ｍｍ×１０ｍｍの寸法に機械
加工した。実施例１と同様にして熱膨張率を測定したと
ころ、９×１０-6／℃であった。Ｃ／Ｃ複合材上に、チ
タン箔、銀ロウ箔（材質名ＢＡｇ−８）の順にのせ、９
００℃、１×１０-4ｔｏｒｒ以下の圧力で加熱溶融さ
せ、放冷し、メタライズしたＣ／Ｃ複合材を得た。その
Ｃ／Ｃ複合材を４０ｍｍ×４０ｍｍ×１０ｍｍのアルミ
ニウム板とハンダを介して、３００℃の大気中で接合
し、アルミニウム接合カーボン板を得た。Example 2 C / C composite material (trade name PCC manufactured by Hitachi Chemical Co., Ltd.)
-2S) was machined to dimensions of 40 mm x 40 mm x 10 mm. When the coefficient of thermal expansion was measured in the same manner as in Example 1, it was 9 × 10 −6 / ° C. Titanium foil and silver brazing foil (material name BAg-8) were placed on the C / C composite material in this order, and 9
A metallized C / C composite material was obtained by heating and melting at 00 ° C. under a pressure of 1 × 10 −4 torr or less and allowing to cool. The C / C composite material was bonded to an aluminum plate of 40 mm × 40 mm × 10 mm through a solder in the air at 300 ° C. to obtain an aluminum bonded carbon plate.
【００１５】評価 実施例１及び２の金属接合カーボン板を電子ビームで加
熱し、温度上昇を測定した（電子ビーム照射条件：熱負
荷 ５ｋＷ／ｃｍ2、照射面積 直径１５ｍｍの円、照
射時間 ５秒）。比較例１及び２として、実施例１及び
２における金属を接合しないものを用いた。また、照射
後の照射前に対する損耗量を測定した。Evaluation The metal-bonded carbon plates of Examples 1 and 2 were heated by an electron beam and the temperature rise was measured (electron beam irradiation conditions: heat load 5 kW / cm 2 , irradiation area diameter 15 mm circle, irradiation time 5 seconds. ). As Comparative Examples 1 and 2, those in which the metals in Examples 1 and 2 were not joined were used. Further, the amount of wear after irradiation and before irradiation was measured.
【００１６】[0016]
【表１】 [Table 1]
【００１７】[0017]
【発明の効果】請求項１記載の半導体製造装置用ビーム
対向板は、熱負荷による表面温度上昇が抑制され、エロ
ージョンの低減されたものである。請求項２記載の半導
体製造装置用ビーム対向板は、請求項１記載の半導体製
造装置用ビーム対向板の効果を奏し、さらに金属との接
合性に優れる。請求項３記載の半導体製造装置用ビーム
対向板の製造法によれば、熱負荷による表面温度上昇が
抑制され、エロージョンの低減された半導体製造装置用
ビーム対向板が製造できる。The beam facing plate for a semiconductor manufacturing apparatus according to the first aspect of the present invention suppresses an increase in surface temperature due to a heat load and reduces erosion. A beam facing plate for a semiconductor manufacturing apparatus according to a second aspect has the effect of the beam facing plate for a semiconductor manufacturing apparatus according to the first aspect, and further has excellent bondability with a metal. According to the method of manufacturing a beam facing plate for a semiconductor manufacturing apparatus described in claim 3, it is possible to manufacture a beam facing plate for a semiconductor manufacturing apparatus in which an increase in surface temperature due to a heat load is suppressed and erosion is reduced.
【図１】本発明半導体製造装置用ビーム対向板の一例の
断面図である。FIG. 1 is a sectional view of an example of a beam facing plate for a semiconductor manufacturing apparatus according to the present invention.
【図２】従来の半導体製造装置用ビーム対向板の断面図
である。FIG. 2 is a sectional view of a conventional beam facing plate for a semiconductor manufacturing apparatus.
１ カーボン板 ２ 接合面 ３ 金属製ヒートシンク ４ 固定ボルト ５ ベースメタル 1 Carbon plate 2 Bonding surface 3 Metal heat sink 4 Fixing bolt 5 Base metal
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成７年８月２２日[Submission date] August 22, 1995
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００７[Correction target item name] 0007
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【０００７】捏和は、一般に双腕型ニーダー等を用い
て、各材料を、好ましくは２００〜２５０℃で、好まし
くは５〜１０時間混練することにより行われる。粉砕
は、捏和で得られたものを、各種粉砕機を用いて平均粒
子径が２０〜３０μｍになるように粉砕することにより
行われる。成形は、粉砕により得られた粉体を、金型プ
レス、ラバープレス等の方法で賦形することにより行わ
れる。圧力は１０００〜１５００kg/cm2が好ましい。The kneading is generally carried out by using a double-arm kneader or the like to knead each material at preferably 200 to 250 ° C. for preferably 5 to 10 hours. The pulverization is performed by pulverizing the product obtained by kneading using various pulverizers so that the average particle diameter becomes 20 to 30 μm. Molding a powder obtained by milling, die pressing is carried out by shaping a method such as a rubber press. The pressure is preferably 1000 to 1500 kg / cm 2 .
───────────────────────────────────────────────────── フロントページの続き (72)発明者 中山 憲一 茨城県日立市鮎川町三丁目３番１号 日立 化成工業株式会社山崎工場内 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Kenichi Nakayama 3-3-1, Ayukawa-cho, Hitachi-shi, Ibaraki Hitachi Chemical Co., Ltd. Yamazaki factory
Claims (3)
面に金属のヒートシンクが接合されてなる半導体製造装
置用ビーム対向板。1. A beam facing plate for a semiconductor manufacturing apparatus, in which a metal heat sink is bonded to a back surface of a carbon protective plate which is a beam facing surface.
熱膨張率が４×１０-6／℃〜１５×１０-6／℃のカーボ
ン材である請求項１記載の半導体製造装置用ビーム対向
板。2. A carbon protective plate serving as a beam facing surface,
The beam facing plate for a semiconductor manufacturing apparatus according to claim 1, which is a carbon material having a thermal expansion coefficient of 4 × 10 −6 / ° C. to 15 × 10 −6 / ° C.
面に金属をヒートシンクとして冶金的に接合することを
特徴とする半導体製造装置用ビーム対向板の製造法。3. A method of manufacturing a beam facing plate for a semiconductor manufacturing apparatus, wherein metal is metallurgically bonded as a heat sink to a back surface of a carbon protective plate which is a beam facing surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7199659A JPH0950969A (en) | 1995-08-04 | 1995-08-04 | Beam facing plate for semiconductor manufacturing device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7199659A JPH0950969A (en) | 1995-08-04 | 1995-08-04 | Beam facing plate for semiconductor manufacturing device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0950969A true JPH0950969A (en) | 1997-02-18 |
Family
ID=16411510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7199659A Pending JPH0950969A (en) | 1995-08-04 | 1995-08-04 | Beam facing plate for semiconductor manufacturing device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0950969A (en) |
-
1995
- 1995-08-04 JP JP7199659A patent/JPH0950969A/en active Pending
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