JPH0945865A - Hybrid integrated circuit device - Google Patents
Hybrid integrated circuit deviceInfo
- Publication number
- JPH0945865A JPH0945865A JP19508795A JP19508795A JPH0945865A JP H0945865 A JPH0945865 A JP H0945865A JP 19508795 A JP19508795 A JP 19508795A JP 19508795 A JP19508795 A JP 19508795A JP H0945865 A JPH0945865 A JP H0945865A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- opening
- resistance element
- substrate
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Details Of Resistors (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Semiconductor Integrated Circuits (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は混成集積回路装置に
関し、更に詳しく言えば、電流検出などに用いられる抵
抗が備えられた混成集積回路装置の改善に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid integrated circuit device, and more particularly to improvement of a hybrid integrated circuit device provided with a resistor used for current detection or the like.
【０００２】[0002]
【従来の技術】以下で、従来例に係る混成集積回路装置
について説明する。この混成集積回路装置は、電流検出
抵抗を搭載したものである。例えばモータの駆動回路を
搭載した混成集積回路装置では、モータに過電流が流れ
た場合にはモータを保護するために回路の駆動を停止し
てしまうなどというように、モータに流れる電流を検出
しつつ、駆動制御を行うことが多い。2. Description of the Related Art A conventional hybrid integrated circuit device will be described below. This hybrid integrated circuit device is equipped with a current detection resistor. For example, in a hybrid integrated circuit device equipped with a motor drive circuit, when the overcurrent flows in the motor, the circuit drive is stopped to protect the motor. However, drive control is often performed.
【０００３】この場合には、モータの接続端子に電流検
出抵抗を接続し、モータに流れる電流を電流検出抵抗で
電圧変換し、アンプで増幅したのちに制御回路に帰還さ
せることにより、モータに流れる電流を検出するという
方法が用いられていた。このような電流検出に用いる抵
抗素子（ＲＢ）として、図４に示すようにシリコン基体
（１）の上にシリコン酸化膜（２）が形成され、その上
に銅とマンガンの合金材であるマンガニン材等の合金材
からなる抵抗体（３）が形成され、かつその中央部に開
口が形成された抵抗素子（以下これを中空構造の抵抗素
子と称する）が用いられてきている。In this case, a current detection resistor is connected to the connection terminal of the motor, the current flowing through the motor is converted into a voltage by the current detection resistor, amplified by an amplifier, and then fed back to the control circuit to flow to the motor. The method of detecting an electric current was used. As a resistance element (RB) used for such current detection, a silicon oxide film (2) is formed on a silicon substrate (1) as shown in FIG. 4, and manganin, which is an alloy material of copper and manganese, is formed thereon. A resistance element (hereinafter referred to as a hollow structure resistance element) in which a resistor (3) made of an alloy material such as a material is formed and an opening is formed in the central portion thereof has been used.
【０００４】この抵抗体（３）の材料となる合金材は、
温度上昇による抵抗値の変動が少なく、抵抗値のばらつ
きも少なく、かつ低抵抗なので、高精度が要求される電
流検出抵抗の抵抗体として用いるには非常に適した材質
である。また、この抵抗素子（ＲＢ）は、中央部に開口
が形成され、その両端から電流（Ｉ）を供給すると、図
５に示すように電流（Ｉ）は抵抗体（３）の内部でほぼ
均一に流れ、抵抗体（３）の一部で局所的に電流が流れ
て発熱することを抑止できるので、均熱性に優れた特性
をもつ抵抗である。The alloy material used for the resistor (3) is
It is a material that is very suitable for use as a resistor for a current detection resistor that requires high accuracy because it has little fluctuation in resistance value due to temperature rise, has little variation in resistance value, and has low resistance. Further, this resistance element (RB) has an opening formed in the central portion, and when a current (I) is supplied from both ends of the resistance element (RB), the current (I) is substantially uniform inside the resistor (3) as shown in FIG. Since it is possible to prevent the current from flowing locally to a portion of the resistor (3) to generate heat, it is a resistor having excellent characteristics of uniform heating.
【０００５】図６に、このような中空構造の抵抗を電流
検出抵抗として用いた混成集積回路装置の一部を示す。
この混成集積回路装置は図６に示すように、アルミ基板
（７）上に酸化アルミニウム膜（８）が形成されてなる
厚膜基板上に、抵抗素子（ＲＢ）、銅箔からなる回路配
線（５，６）、ＩＣアンプ（４）が形成されている。FIG. 6 shows a part of a hybrid integrated circuit device using such a hollow structure resistance as a current detection resistance.
As shown in FIG. 6, this hybrid integrated circuit device has a circuit wiring (resistive element (RB), copper foil) formed on a thick film substrate in which an aluminum oxide film (8) is formed on an aluminum substrate (7). 5, 6) and an IC amplifier (4) are formed.
【０００６】回路配線（５，６）は、この抵抗（ＲＢ）
への電流供給用の端子であって、抵抗体（３）の一端と
回路配線（５）とはボンディングワイヤ（９Ａ）で接続
され、抵抗体（３）の他端と回路配線（６）とはボンデ
ィングワイヤ（９Ｂ）で接続されている。また、抵抗体
（３）の両端とＩＣアンプ（４）とはボンディングワイ
ヤ（９Ｃ，９Ｄ）で接続されている。The circuit wiring (5, 6) has this resistance (RB).
A terminal for supplying current to the resistor (3), one end of the resistor (3) and the circuit wiring (5) are connected by a bonding wire (9A), and the other end of the resistor (3) and the circuit wiring (6). Are connected by a bonding wire (9B). Further, both ends of the resistor (3) and the IC amplifier (4) are connected by bonding wires (9C, 9D).
【０００７】抵抗（ＲＢ）に電流を供給すると、その電
流は回路配線（５）→ボンディングワイヤ（９Ａ）→抵
抗体（３）→ボンディングワイヤ（９Ｂ）→回路配線
（６）といった経路で流れ、抵抗体（３）の両端にかか
る電位差がボンディングワイヤ（９Ｃ，９Ｄ）でＩＣア
ンプ（４）に伝達される。抵抗体（３）は非常に低抵抗
でその両端にかかる電圧は微小なので、この微小な電圧
がＩＣアンプ（４）で増幅され、ボンディングワイヤ
（９Ｅ，９Ｆ）で不図示の制御回路に伝達されて電流が
検出される。When a current is supplied to the resistor (RB), the current flows through a route of circuit wiring (5) → bonding wire (9A) → resistor (3) → bonding wire (9B) → circuit wiring (6), The potential difference applied to both ends of the resistor (3) is transmitted to the IC amplifier (4) by the bonding wires (9C, 9D). Since the resistor (3) has a very low resistance and the voltage applied to both ends thereof is minute, this minute voltage is amplified by the IC amplifier (4) and transmitted to the control circuit (not shown) by the bonding wires (9E, 9F). Current is detected.
【０００８】[0008]
【発明が解決しようとする課題】しかしながら、上記従
来の混成集積回路装置では、図５に示すように、開口構
造の抵抗素子（ＲＢ）と、その検出電圧を増幅するＩＣ
アンプ（４）とは別の領域に形成されており、開口構造
の抵抗素子（ＲＢ）内の開口部にはなにも形成されてい
なかったので、この開口の領域の有効活用が図れずに集
積化の妨げになるという問題が生じていた。However, in the above-mentioned conventional hybrid integrated circuit device, as shown in FIG. 5, a resistance element (RB) having an opening structure and an IC for amplifying the detection voltage thereof are provided.
Since it is formed in a region different from that of the amplifier (4) and nothing is formed in the opening in the resistance element (RB) having an opening structure, it is not possible to effectively utilize this opening region. There was a problem that it hinders integration.
【０００９】[0009]
【課題を解決するための手段】本発明は上記従来の欠点
に鑑み成されたもので、図１に例示するように、基体上
に絶縁膜を介して抵抗体が形成され、前記抵抗体の中央
を貫通して形成された開口が形成され、かつ前記開口内
に、モノリシックＩＣが配置されたことにより、従来活
用できなかった開口の領域の有効活用を図り、集積化が
可能となる混成集積回路装置の提供を目的とする。The present invention has been made in view of the above-mentioned drawbacks of the prior art. As illustrated in FIG. 1, a resistor is formed on a substrate through an insulating film, and the resistor of the resistor is formed. By forming an opening formed through the center and arranging a monolithic IC in the opening, it is possible to effectively utilize the area of the opening that could not be utilized in the past and to achieve integration. It is intended to provide a circuit device.
【００１０】以下で本発明の作用について説明する。本
発明によれば図１に例示するように、従来使用していな
かった抵抗素子の開口内にモノリシックＩＣが配置され
ているので、開口の領域を有効に活用でき、モノリシッ
クＩＣの形成領域の分だけ集積化が可能になる。なお、
本発明において抵抗素子は、電流検出用の抵抗であっ
て、かつモノリシックＩＣは抵抗素子に電流を流すこと
で生じる電圧を増幅するアンプであることが望ましい。The operation of the present invention will be described below. According to the present invention, as illustrated in FIG. 1, since the monolithic IC is arranged in the opening of the resistance element which has not been used conventionally, the area of the opening can be effectively utilized and the area where the monolithic IC is formed is divided. Only integration becomes possible. In addition,
In the present invention, the resistance element is preferably a resistance for current detection, and the monolithic IC is preferably an amplifier that amplifies a voltage generated by flowing a current through the resistance element.
【００１１】抵抗素子とアンプとの結線が長くなると、
抵抗素子に電流を流して得られる微小電圧に外部からの
ノイズが混入しやすくなり、これがアンプで増幅される
ことで電流の検出精度が低下するので、抵抗素子とアン
プとはなるべく近い位置に配置し、両者の結線を短くす
ることが望まれるが、本発明では抵抗素子の開口内にア
ンプを配置しており結線は非常に短くてすむため、電流
検出精度が低下することを抑止することができ、本発明
において特に有効な効果を奏する。If the connection between the resistance element and the amplifier becomes long,
Noise from the outside easily mixes into the minute voltage obtained by passing a current through the resistance element, and the amplification of this noise reduces the current detection accuracy.Therefore, place the resistance element and the amplifier as close to each other as possible. However, it is desirable to shorten the wire connection between the two, but in the present invention, since the amplifier is arranged in the opening of the resistance element and the wire connection can be very short, it is possible to prevent the current detection accuracy from decreasing. It is possible to achieve particularly effective effects in the present invention.
【００１２】[0012]
【発明の実施の形態】以下で、本発明の一実施形態に係
る混成集積回路装置について図面を参照しながら説明す
る。図１は本実施形態の混成集積回路装置の要部を説明
する図であって、図２は図１のＡ−Ａ線断面図である。
この混成集積回路装置は、モータの駆動回路を搭載し、
モータに流れる電流を検出する電流検出抵抗を搭載した
ものであって、その電流検出抵抗の抵抗体としては図４
に示すように、基体の一例であるシリコン基体（１）の
上に絶縁膜の一例であるシリコン酸化膜（２）が形成さ
れ、その上に銅とマンガンの合金材であるマンガニン材
からなる抵抗体（３）が形成され、かつその中央のＳｉ
基材（１）上に開口が形成された抵抗素子（以下これを
開口構造の抵抗素子と称する）が用いられている。DETAILED DESCRIPTION OF THE INVENTION A hybrid integrated circuit device according to an embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a view for explaining a main part of the hybrid integrated circuit device of this embodiment, and FIG. 2 is a sectional view taken along the line AA of FIG.
This hybrid integrated circuit device is equipped with a motor drive circuit,
The current detection resistor for detecting the current flowing through the motor is mounted, and the resistor of the current detection resistor is shown in FIG.
As shown in FIG. 3, a silicon oxide film (2), which is an example of an insulating film, is formed on a silicon substrate (1), which is an example of a substrate, and a resistor made of a manganin material that is an alloy material of copper and manganese is formed on the silicon oxide film (2). The body (3) is formed and Si in the center
A resistance element having an opening formed on a base material (1) (hereinafter referred to as a resistance element having an opening structure) is used.
【００１３】本実施形態に係る混成集積回路装置は図１
に示すように、アルミ基板（１７）上に酸化アルミニウ
ム膜（１８）が形成された厚膜基板上に、開口を有する
抵抗素子（ＲＢ）、銅箔からなる回路配線（１５Ａ，１
５Ｂ）が形成され、モノリシックＩＣの一例であるＩＣ
アンプ（１４）が抵抗素子（ＲＢ）の開口内に形成され
ている。ここで回路配線（１５Ａ，１５Ｂ）や銅箔より
成るランドは、接着剤で固定、または全面に貼られた樹
脂と熱圧着されている。従って抵抗素子はランド上に半
田を介して固定されている。The hybrid integrated circuit device according to this embodiment is shown in FIG.
As shown in FIG. 3, a resistor element (RB) having an opening and a circuit wiring (15A, 1
5B) is formed and is an example of a monolithic IC
The amplifier (14) is formed in the opening of the resistance element (RB). Here, the circuit wiring (15A, 15B) and the land made of copper foil are fixed by an adhesive or thermocompression-bonded with a resin stuck on the entire surface. Therefore, the resistance element is fixed on the land via the solder.
【００１４】回路配線（１５Ａ，１５Ｂ）は、この抵抗
（ＲＢ）への電流供給用の端子であって、抵抗体（３）
の一端と回路配線（１５Ａ）とはボンディングワイヤ
（１９Ａ）で接続され、抵抗体（３）の他端と回路配線
（１５Ｂ）とはボンディングワイヤ（１９Ｂ）で接続さ
れている。また、抵抗体（３）の両端とＩＣアンプ（１
４）とはボンディングワイヤ（１９Ｃ，１９Ｄ）で接続
されている。The circuit wiring (15A, 15B) is a terminal for supplying a current to this resistor (RB), and is a resistor (3).
Is connected to the circuit wire (15A) by a bonding wire (19A), and the other end of the resistor (3) is connected to the circuit wire (15B) by a bonding wire (19B). Also, both ends of the resistor (3) and the IC amplifier (1
4) is connected with bonding wires (19C, 19D).
【００１５】抵抗（ＲＢ）に電流を供給すると、その電
流は回路配線（１５Ａ）→ボンディングワイヤ（１９
Ａ）→抵抗体（３）→ボンディングワイヤ（１９Ｂ）→
回路配線（１５Ｂ）といった経路で流れ、抵抗体（３）
の両端にかかる電圧がボンディングワイヤ（１９Ｃ，１
９Ｄ）でＩＣアンプ（１４）に伝達される。抵抗体
（３）は非常に低抵抗でその両端にかかる電位差は微小
なので、この微小な電位差がＩＣアンプ（１４）で増幅
され、ボンディングワイヤ（１９Ｅ，１９Ｆ）で不図示
の制御回路に伝達されることで電流が検出される。When a current is supplied to the resistor (RB), the current is changed from the circuit wiring (15A) to the bonding wire (19).
A) → resistor (3) → bonding wire (19B) →
The resistor (3) flows through a route such as circuit wiring (15B).
The voltage applied to both ends of the bonding wire (19C, 1
9D) and is transmitted to the IC amplifier (14). Since the resistor (3) has a very low resistance and the potential difference applied to both ends thereof is minute, this minute potential difference is amplified by the IC amplifier (14) and transmitted to the control circuit (not shown) by the bonding wires (19E, 19F). By doing so, the current is detected.
【００１６】上記の混成集積回路装置によれば、図１，
図２に示すように抵抗素子（ＲＢ）に形成された開口内
にＩＣアンプ（１４）が配置されているので、従来使用
していなかった抵抗素子の開口の領域を有効に活用する
ことができ、ＩＣアンプ（１４）の形成領域の分だけの
集積化が可能になる。また、抵抗素子（ＲＢ）とＩＣア
ンプ（１４）とのボンディングワイヤ（１９Ｃ，１９
Ｄ）が長くなると、そこから外部のノイズが混入しやす
くなり、抵抗素子（ＲＢ）に電流を流して得られる微小
電圧にノイズが乗り、これがＩＣアンプ（１４）で増幅
されることで電流の検出精度が低下するので、このよう
な場合に抵抗素子（ＲＢ）とＩＣアンプ（１４）とはな
るべく近い位置に配置することが望まれるが、本発明で
は抵抗素子の開口内にアンプを配置しており、ボンディ
ングワイヤ（１９Ｃ，１９Ｄ）は非常に短くてすむの
で、電流検出精度が低下することを抑止でき、有効であ
る。According to the above hybrid integrated circuit device, as shown in FIG.
As shown in FIG. 2, since the IC amplifier (14) is arranged in the opening formed in the resistance element (RB), it is possible to effectively utilize the opening area of the resistance element which has not been used conventionally. , The IC amplifier (14) can be integrated in the area where the IC amplifier (14) is formed. Further, the bonding wires (19C, 19C) for connecting the resistance element (RB) and the IC amplifier (14).
When D) becomes long, external noise easily mixes in from there, and noise is applied to a minute voltage obtained by passing a current through the resistance element (RB), and this is amplified by the IC amplifier (14), so that the current In such a case, it is desirable to dispose the resistance element (RB) and the IC amplifier (14) as close to each other as possible because the detection accuracy decreases. However, in the present invention, the amplifier is arranged in the opening of the resistance element. Since the bonding wires (19C, 19D) are very short, it is possible to prevent the current detection accuracy from decreasing and it is effective.
【００１７】なお、本形態では抵抗素子の中央を開口し
た抵抗素子を用いているが、本発明はこれに限らず、例
えば図３に示すように、Ｓｉ基材の上にＩＣアンプを設
けずに、Ｓｉ基材の中にＩＣアンプ（１４）を設けて
も、同様の効果を奏する。また、本形態では抵抗体
（３）の材料としてマンガニン材等の合金材を用いてい
るが本発明はこれに限らず、カーボンやセラミックなど
を用いた、一般的な抵抗体を用いても同様の効果を奏す
る。In this embodiment, a resistance element having an opening in the center of the resistance element is used, but the present invention is not limited to this, and as shown in FIG. 3, for example, an IC amplifier is not provided on a Si base material. Further, even if the IC amplifier (14) is provided in the Si base material, the same effect can be obtained. Further, in the present embodiment, an alloy material such as manganin material is used as the material of the resistor (3), but the present invention is not limited to this, and the same applies even if a general resistor using carbon or ceramic is used. Produce the effect of.
【００１８】また、本形態では電流検出抵抗として用い
る際の抵抗素子について説明しているが本発明はこれに
限らず、他の箇所に用いられる抵抗に適用しても、同様
の効果を奏する。さらに、本形態ではモノリシックＩＣ
としてＩＣアンプ（１４）を例にとって説明しているが
本発明はこれに限らず、例えばコンパレータなどのモノ
リシックＩＣならばどのようなものであっても同様の効
果を奏する。Further, in the present embodiment, the resistance element when used as a current detection resistance has been described, but the present invention is not limited to this, and the same effect can be obtained even when applied to a resistance used in other places. Furthermore, in this embodiment, a monolithic IC
However, the present invention is not limited to this, and any monolithic IC such as a comparator will have the same effect.
【００１９】[0019]
【発明の効果】以上説明したように本発明に係る混成集
積回路装置によれば、基体上に絶縁膜を介して抵抗体が
形成され、前記基体，絶縁膜及び抵抗体の中央を貫通す
る開口が形成されてなる抵抗素子を備え、開口内に、モ
ノリシックＩＣが配置されているので、従来使用してい
なかった抵抗素子の開口の形成領域を有効活用すること
ができ、モノリシックＩＣの形成領域の分だけ集積化が
可能になる。As described above, according to the hybrid integrated circuit device of the present invention, the resistor is formed on the substrate via the insulating film, and the opening penetrating the center of the substrate, the insulating film and the resistor. Since the monolithic IC is arranged in the opening by providing the resistance element formed by, the formation area of the opening of the resistance element, which has not been used conventionally, can be effectively used, and the formation area of the monolithic IC can be improved. It is possible to integrate as much.
【００２０】なお、本発明において抵抗素子は、電流を
流して電流検出する抵抗であって、かつモノリシックＩ
Ｃは抵抗素子に電流を流すことで生じる電位差を増幅す
るアンプであることが望ましい。抵抗素子とアンプとは
なるべく近い位置に配置し、結線を短くすることが望ま
れるが、本発明では抵抗素子の開口内にアンプを配置し
ているので結線は非常に短くてすむので、電流検出精度
が低下することもなく、本発明は特に有効である。In the present invention, the resistance element is a resistance for flowing a current and detecting the current, and is a monolithic I
It is desirable that C is an amplifier that amplifies a potential difference generated by passing a current through the resistance element. It is desirable to arrange the resistance element and the amplifier as close to each other as possible and shorten the connection.However, since the amplifier is arranged in the opening of the resistance element in the present invention, the connection can be very short, so that the current detection The present invention is particularly effective without lowering the accuracy.
【図１】本発明の一実施形態に係る混成集積回路装置を
説明する図である。FIG. 1 is a diagram illustrating a hybrid integrated circuit device according to an embodiment of the present invention.
【図２】本発明の一実施形態に係る混成集積回路装置を
説明する第１の断面図である。FIG. 2 is a first cross-sectional view illustrating a hybrid integrated circuit device according to an embodiment of the present invention.
【図３】本発明の一実施形態に係る混成集積回路装置を
説明する第２の断面図である。FIG. 3 is a second sectional view illustrating the hybrid integrated circuit device according to the embodiment of the present invention.
【図４】中空構造の抵抗を説明する第１の図面である。FIG. 4 is a first drawing illustrating resistance of a hollow structure.
【図５】中空構造の抵抗を説明する第２の図面である。FIG. 5 is a second drawing illustrating resistance of a hollow structure.
【図６】従来例に係る混成集積回路装置を説明する図で
ある。FIG. 6 is a diagram illustrating a hybrid integrated circuit device according to a conventional example.
【符号の説明】 （１） シリコン基体（基体） （２） シリコン酸化膜（絶縁膜） （３） マンガニン材（抵抗体） （１４） ＩＣアンプ（モノリシックＩＣ） （１５Ａ） 第１の回路配線 （１５Ｂ） 第２の回路配線 （１５Ｃ） 第３の回路配線 （１６） 銅板 （１７） アルミ基板 （１８） アルミ酸化膜 （１９Ａ，１９Ｂ）ボンディングワイヤ （１９Ｃ，１９Ｄ）ボンディングワイヤ （１９Ｅ，１９Ｆ）ボンディングワイヤ （ＲＢ） 抵抗素子[Explanation of reference signs] (1) Silicon substrate (substrate) (2) Silicon oxide film (insulating film) (3) Manganin material (resistor) (14) IC amplifier (monolithic IC) (15A) First circuit wiring ( 15B) Second circuit wiring (15C) Third circuit wiring (16) Copper plate (17) Aluminum substrate (18) Aluminum oxide film (19A, 19B) Bonding wire (19C, 19D) Bonding wire (19E, 19F) Bonding Wire (RB) resistance element
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０５Ｋ 1/18 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical indication H05K 1/18
Claims (3)
属より成る配線および／またはランドが設けられ、この
配線および／またはランドに受動素子および能動素子が
電気的に接続されて、所定の回路を達成する混成集積回
路装置に於いて前記受動素子の中の抵抗体は、基体上に
絶縁膜を介して形成され、前記抵抗体の中央を貫通して
形成された開口であり、且つ前記基体上にモノリシック
ＩＣが形成され、前記モノリシックＩＣと抵抗体の電気
的接続が、実質基体上で達成されることを特徴とする混
成集積回路装置。1. An insulating or insulating-treated substrate is provided with wirings and / or lands made of metal, and passive elements and active elements are electrically connected to the wirings and / or lands to form a predetermined circuit. In the hybrid integrated circuit device for achieving the above, the resistor in the passive element is an opening formed through the insulating film on the base body and penetrating the center of the resistor body, and the base body A hybrid integrated circuit device, wherein a monolithic IC is formed thereon, and electrical connection between the monolithic IC and the resistor is achieved substantially on a substrate.
膜はシリコン酸化膜からなることを特徴とする請求項１
記載の混成集積回路装置。2. The substrate is made of silicon, and the insulating film is made of a silicon oxide film.
A hybrid integrated circuit device as described.
って、かつ前記モノリシックＩＣは前記抵抗素子に電流
を流すことで生じる電圧を増幅するアンプであることを
特徴とする請求項１または請求項２記載の混成集積回路
装置。3. The resistance element is a resistance for current detection, and the monolithic IC is an amplifier that amplifies a voltage generated by flowing a current through the resistance element. The hybrid integrated circuit device according to claim 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19508795A JPH0945865A (en) | 1995-07-31 | 1995-07-31 | Hybrid integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19508795A JPH0945865A (en) | 1995-07-31 | 1995-07-31 | Hybrid integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0945865A true JPH0945865A (en) | 1997-02-14 |
Family
ID=16335333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19508795A Pending JPH0945865A (en) | 1995-07-31 | 1995-07-31 | Hybrid integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0945865A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002086919A1 (en) * | 2001-04-20 | 2002-10-31 | Sanken Electric Co., Ltd. | Solenoid drive apparatus and drive method |
| JP2004022710A (en) * | 2002-06-14 | 2004-01-22 | Dowa Mining Co Ltd | Metal ceramic joined body and method for manufacturing the same |
| US7573274B2 (en) | 2006-08-04 | 2009-08-11 | Denso Corporation | Current sensor |
-
1995
- 1995-07-31 JP JP19508795A patent/JPH0945865A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002086919A1 (en) * | 2001-04-20 | 2002-10-31 | Sanken Electric Co., Ltd. | Solenoid drive apparatus and drive method |
| US7336470B2 (en) | 2001-04-20 | 2008-02-26 | Sanken Electric Co., Ltd. | Solenoid drive apparatus and drive method |
| JP2004022710A (en) * | 2002-06-14 | 2004-01-22 | Dowa Mining Co Ltd | Metal ceramic joined body and method for manufacturing the same |
| US7573274B2 (en) | 2006-08-04 | 2009-08-11 | Denso Corporation | Current sensor |
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