JPH0945223A - Electron emitting element, and electron beam generator, and image forming device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electron emitting element which can perform stable forming with low voltage. SOLUTION: An electron emitting element has a pair of electrodes 2 and 3 on an insulating substrate 1, and a fine particle film 5 electrically connects that electrodes 2 and 3 in a pair in the gap L between those electrodes. At this time, the angle Φ between the end faces of the electrodes 2 and 3 facing that gap and the insulating substrate 1 is 0 <ϕ<=80 deg..

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron-emitting device, particularly a surface conduction electron-emitting device used as an electron-emitting source, and an electron beam generator and an image display device using the electron-emitting device.

[0002]

2. Description of the Related Art Conventionally, as a device capable of emitting electrons with a simple structure, for example, MI Elinson (M.
I. A cold cathode device announced by Elinson et al. Is known [Radio Engineering Electron Physics (Radio Eng.
Tron Phys. ) Volume 10, 1290-1296
P. 1965].

Such an element utilizes a phenomenon in which an electron emission occurs when a current is applied in parallel to a thin film having a small area formed on a substrate, and is generally called a surface conduction electron-emitting element. being called.

As the surface conduction electron-emitting device, one using a SnO ₂ (Sb) thin film developed by Elinson et al., One using an Au thin film [G Didtomer "Sin Solid Films" (G. Dittm) is used.
er: “Thin Solid Films”) No. 9
Vol. 317, 1972), by ITO thin film [M. Hartwell and C. G. von Stat "IEE Trans Edie Conference" (M. Hartwell and C.
G. FIG. Fonstad: “IEEE Trans ED
Conf. ") 519, 1975], by carbon thin film [Hiraki Araki, et al .:" Vacuum ", Vol. 26, No. 1,
22 (1983)] and the like are reported.

FIG. 5 shows a typical device configuration of these surface conduction electron-emitting devices. In the figure, 2 and 3 are electrodes for obtaining electrical connection, 15 is a thin film formed of an electron emitting material, 1 is a substrate, and 4 is an electron emitting portion.

Conventionally, in these surface conduction electron-emitting devices, the electron-emitting portion 4 is formed in advance by an electric heating process called forming before the electron emission.
That is, by applying a voltage between the electrodes 2 and 3,
The thin film 15 is energized, and the thin film 15 is locally destroyed, deformed or altered by the Joule heat generated thereby, and the electron emitting portion 4 in an electrically high resistance state is formed to obtain an electron emitting function. There is.

The electrically high resistance state means the thin film 1
A discontinuous state film having a crack of 0.5 to 5 μm in part of 5 and having a so-called island structure inside the crack. The island structure generally has fine particles with a diameter of several tens to several μm on the substrate 1,
Each fine particle is a film that is spatially discontinuous and electrically continuous.

Conventionally, in the surface conduction electron-emitting device, a voltage is applied to the high resistance discontinuous film by the electrodes 2 and 3 and a current is caused to flow on the surface of the device so that electrons are emitted from the fine particles. .

However, the above-described conventional electron-emitting device manufactured by the forming process by electric heating has the following problems. That is, since it is impossible to design an island structure that will serve as an electron-emitting portion, it is difficult to improve the elements, and variations among the elements are likely to occur. The island structure has a short life and is poor in stability. Since the forming voltage, which is the minimum voltage required to make an electrically high resistance state, is large, and the Joule heat generated during the forming process is large, it is easy to break the substrate and it is difficult to make multiple substrates. The material of the island structure is limited to gold, silver, SnO ₂ , ITO and the like, and materials having a small work function cannot be used, so that a large current cannot be obtained.

Therefore, the surface conduction electron-emitting device has the advantage that the device structure is simple,
It has not been applied positively in industry. Therefore, the inventors of the present invention proposed a new surface conduction electron-emitting device in Japanese Patent Laid-Open No. 2-56822 in which a fine particle film is arranged between electrodes and an electron-emitting portion is provided by applying an electric current to the fine particle film. There is.

The characteristics of this electron-emitting device are as follows. That is, since it is possible to reduce the amount of heat at the time of forming, it is possible to prevent film cracking and substrate cracking, and it is possible to select an island material, and by using a fine particle film as an electron emitting material, the voltage required for the forming step (Forming voltage) can be small.

As a method for producing the above-mentioned fine particle film, a gas deposition method, a dispersion coating method, or the like is used. Among them, a dispersion liquid of fine particles of a desired material is spin-coated or is coated on a substrate by a technique such as dipping. The dispersion coating method in which the solvent, binder, etc. are then removed by heat treatment is the simplest.

When this device is used as an electron-emitting device, in order to fly an electron beam, 1 × 10 ^-5 to 1 × 1
A vacuum of 0 ^-7 Torr is suitable. That is, the surface conduction electron-emitting device is placed in a vacuum container, a face plate is provided vertically above the device to form an electron-emitting device, a voltage is applied between the electrodes, and an electron beam obtained from the electron-emitting portion is fluorescent. It emits light by irradiating the body.

When manufacturing such an electron-emitting device,
The above-mentioned element is provided in a container, a vacuum is applied, and then the sealing frit is melted and sealed at a high temperature of about 450 ° C. or higher to form the vacuum container.

[0015]

However, when the electron-emitting device is placed inside a vacuum container, heated to about 450 ° C. or higher, and sealed by a sealing frit glass to form a vacuum container, the electrons inside the vacuum container are formed. The element resistance of the emission element is
There was something that increased the resistance.

FIG. 2 is a schematic view showing this conventional electron-emitting device, FIG. 2 (a) is a perspective view of the electron-emitting device, and FIG. 2 (b) is a sectional view taken along the line BB. Therefore, when a cross section of the electrode-electrode gap-electrode portion as shown in FIG. 2A is observed with a field emission scanning electron microscope (FE-SEM), a high resistance element is shown in FIG. 2B. As described above, it was found that the fine particle film 5 which is the electron emitting material does not completely cover the electrode end surface 15 which is the surface of the electrode end portion.

Further, the angle θ formed by the end face of the device electrode facing the electrode gap of the device having high resistance and the surface of the insulating substrate was θ = 90 °. That is, since the angle θ formed between the device electrode end surface and the surface of the substrate is substantially vertical, the electron emitting material cannot cover the electrode end surface, so that part of the electrode end surface is oxidized during sealing and the device has high resistance. However, there is a problem that the voltage required for forming (forming voltage) increases.

For example, in an electron-emitting device in which the electron-emitting material as shown in FIG. 2B could not cover the electrode end surface 15, the forming voltage was about 4 V when the sealing heating step was not performed. On the other hand, in the case of passing through the sealing and heating step, the voltage increased to about 10 V and required twice or more electric power. Due to this increase in the forming voltage, when a large number of electron-emitting devices are arranged on the same wiring, the larger the number of arranged electron-emitting devices, the more power is required, and the image display device using the multi-electron-emitting devices, etc. It becomes a big problem at the time of manufacturing. That is, a large power supply is required, the number of electron-emitting devices arranged on the same line is limited to the power supply performance limit, and a large amount of power is applied to the device substrate, causing local heating due to Joule heat. The problem is that the substrate cracks.

Further, in order to reduce the rise in the energization heat treatment voltage in the sealing heating step, precise control such as lowering the heating temperature in the sealing heating step or shortening the heating time is performed, but the productivity is improved. Considering the above, a simpler countermeasure is required.

The present invention has been made in view of the above problems, and when the surface-conduction type electron-emitting device is formed inside the vacuum container and the frit seal is formed at a high temperature in the vacuum container, the device is It is possible to provide an electron-emitting device having uniform brightness, an electron beam generator in which a plurality of the devices are arranged, and an image display device by preventing the resistance from becoming high and enabling stable forming at a lower voltage. To aim.

[0021]

The present inventors have paid attention to the relationship between the cross-sectional shape of the element electrode and the coverage of the fine particle film so that the fine particle film completely covers the element electrode particularly in the electrode gap portion. As a result of intensive studies, the present invention has been achieved as follows.

That is, the present invention provides an electron-emitting device having a pair of electrodes on an insulating substrate and a fine particle film for electrically connecting the pair of electrodes to an electrode gap between the electrodes.
The electron emitting device is characterized in that an angle θ formed by the end face of the electrode facing the electrode gap and the insulating substrate is 0 <θ ≦ 80 °.

Further, the present invention is characterized by comprising at least an electron source in which a plurality of the above-mentioned electron-emitting devices of the present invention are arranged, and a modulation means for modulating an electron beam emitted from the electron source. It is a line generator.

Furthermore, the present invention provides an electron source in which at least a plurality of the above-mentioned electron-emitting devices of the present invention are arranged, a modulating means for modulating an electron beam emitted from the electron source, and an image by irradiating the electron beam. An image display device comprising an image forming member to be formed.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings. FIG. 1 is a schematic view showing an example of the electron-emitting device of the present invention, FIG. 1 (a) is a perspective view of the electron-emitting device, and FIG. 1 (b) is a sectional view taken along the line AA.

In these figures, 1 is an insulating substrate, 2 and 3 are electrodes, 4 is an electron emitting portion, 5 is a fine particle film, L is an electrode gap which is an electrode interval, and θ is the electrodes 2 and 3. It is an angle formed by the end face and the insulating substrate 1.

In the present invention, as the material of the fine particle film, borides such as LaB ₆ , C ₈ B ₆ , YB ₄ and GdB ₄ , carbides such as TiC, ZrC, HfC, TaC, SiC and WC, TiN, Nitride such as ZrN, HfN, N
b, Mo, Rh, Hf, Ta, W, Re, Ir, Pt,
Ti, Au, Ag, Cu, Cr, Al, Co, Ni, F
e, Pb, Pd, Ca, Ba and other metals, In ₂ O ₃ ,
Metal oxides such as SnO ₂ and Sb ₂ O ₃ , semiconductors such as Si and Ge, carbon, AgMg, and the like can be used, but are not limited thereto.

As the electrode material, a general conductive material, A
In addition to metals such as u, Ag and Pt, oxide conductive materials such as SnO ₂ and ITO can be used. The width of the electrode is several μm
〜Several mm is suitable. The electrode gap (L in FIG. 1) which is the minimum distance between the electrodes is suitably several μm to several hundred μm, and is formed so as to be electrically connected to at least the fine particle film.

As a method for forming the fine particle film, a gas deposition method or the like can be used, but in the method for producing the electron-emitting device of the present invention, the dispersion coating method, which is the simplest forming method, is used. There is.

In this dispersion coating method, a dispersion liquid of fine particles of the above-mentioned material is applied to a substrate or the like by a method such as spin coating or dipping, and a solvent, a binder and the like are removed by heat treatment.

As the dispersion liquid, it is possible to use fine particles and an additive for promoting dispersion of the fine particles added to an organic solvent such as butyl acetate or alcohol, and the dispersion liquid of fine particles is prepared by stirring or the like.

Further, as a chemical method for dispersing and forming fine particles, there is also used a method in which a solvent of an organometallic compound is applied on a substrate, and then metal oxide of a semiconductor or fine particles of metal is formed by thermal decomposition. be able to. As an example, tin caprylate (C ₇ H ₁₅ COO) ₂ Sn, diisoacyloxyethoxyantimony C ₂ H ₅ O (C ₅ H
_By thermal decomposition of ₁₁ O) ₂ Sb, SnO ₂ and S
Examples include forming fine particles of b ₂ O ₃ and forming Pd fine particles from an organopalladium compound.

When the fine particle film is formed in this manner, the sheet resistance of the fine particle film is 5 × 10 ³ to 1 × 10 ⁷ Ω.
It is preferable that it be / □.

Such an element is placed inside a vacuum container, a face plate is provided above the element, baking is performed at 450 ° C. for about 30 minutes, and the element is sealed and used as an electron source or an image display device. The influence of the angle θ between the end faces of the electrodes 2 and 3 and the insulating substrate 1 will be described.

When 0 <θ ≦ 80 ° C., as shown in FIG. 1 (b), the end faces of the electrodes 2 and 3 are completely covered with the fine particle film 5, and the fine particle film 5 and the electrodes 2 and 3 are completely covered.
Since the electrical contact of the element is completely removed, the resistance of the element does not increase even after the sealing heating process, and for example, θ = 50.
When the temperature was set to 0, the resistance value was 500 Ω before the heating for sealing and was 520 Ω after the heating for sealing, showing almost no increase in resistance.
Further, the forming voltage was 4 V before the sealing and heating, but it could be formed at a low voltage of 4.5 V after the heating.

Furthermore, when at least a plurality of elements satisfying the above conditions are arranged and a modulation electrode face plate is added and sealed and sealed to produce an image display device, when electrons are emitted, a uniform luminance is obtained among the plurality of elements. Was obtained.

When 80 ° <θ ≦ 100 ° FIG. 2 shows an embodiment of this condition, and FIG.
Is a sectional view taken along the line BB. 1 is an insulating substrate,
Reference numerals 2 and 3 are electrodes, 4 is an electron emission portion, 5 is a fine particle film, L is an electrode gap, and θ is an angle formed between the electrode end surface 16 of the electrodes 2 and 3 and the surface of the substrate 1.

When θ satisfies 80 ° <θ ≦ 100 °,
As shown in FIG. 2B, the fine particle film 5 did not completely cover the ends of the electrodes 2 and 3. For this reason, the resistance of the element was increased after the sealing and heating process. For example,
When θ = 90 °, the resistance value which was 450Ω before the sealing heating was increased to 20 KΩ after the sealing heating, and the forming voltage was also increased to 12V.

Then, the end portions of the electrodes 2 and 3 are completely covered with the fine particle film 5.
The present inventors believe that the above-mentioned condition that the film was not covered with the above condition was not covered with the following condition. That is, 0
Under the condition of &thgr; ≤80 °, the upper part of the electrode end has a protruding shape as shown in FIG. 1 (b). Therefore, when the fine particle film 5 is formed by the dispersion coating method. , The structure is such that the dispersion liquid is likely to accumulate in the electrode gap, and the tension at the interface with the electrode material further causes the dispersion liquid surface near the interface to rise more easily than that outside the interface, so it is considered that the coverage is improved. .

On the other hand, under the condition of 80 ° <θ ≦ 100 °, since the cross section of the electrode is almost vertical, the dispersion liquid is relatively hard to collect in the electrode gap, and the step coverage is further deteriorated. It is speculated that this is happening.

Furthermore, after sealing and heating the element of,
Electrode gap-A cross section of the electrode is taken with a transmission electron microscope (T
As a result of observation with EM), in the element, as shown in FIG. 2B, the electrodes 2 and 3 are not completely covered with the fine particle film 5, and further, the electrodes 2 and 3 in the part where the fine particle film is not completely covered. The surface of the element is oxidized to form the oxidized portion 7 of the element electrode, which is presumed to have led to the increase of the element resistance.

When 100 ° <θ ≦ 180 °, an element was formed under the above conditions, and a cross section was observed in the same manner as in, but it was found that there was coverage, but the abdominal thickness of the electrode end was thinner than when. Therefore, after the sealing and heating, the resistance became about twice as high as that before the heating, and the forming voltage increased from 4V to about 5.5V.

For the above reasons, the structure of the present electron-emitting device, the electron source using the same, and the image display device are suitable. That is, the angle θ formed between the electrode end surface and the insulating substrate
Is set to 0 <θ ≦ 80 °, the electrode is completely covered with the fine particle film, the resistance is not increased by oxidation even after sealing, and the electrode is stable at a low voltage during forming. I was able to form.

[0044]

EXAMPLES The present invention will be specifically described below with reference to examples.

Example 1 First, a method of manufacturing an electron-emitting device of this example will be described with reference to FIG.

A blue plate substrate was used as the insulating substrate 1, which was thoroughly washed with an organic solvent or the like, and electrodes 2 and 3 were formed by a vacuum deposition technique and a photolithography technique. Any material may be used as the material of the electrode as long as it has conductivity, but in the present embodiment, it was formed using Ni metal.

At this time, the cross-sectional shape of the electrode was made into an inverse taper shape. The cross-sectional shape of the electrode is reversely tapered by forming a tapered resist film and lifting off, or by slightly etching with an etchant to cause side etching, but in the present embodiment, The former was used.

Further, it is desirable that the electrode interval is practically set to 0.5 μm to 20 μm. In this embodiment, the electrode interval is 3 μm and the film thickness is 2000 Å.

Next, Cr was deposited in a thickness of 2000Å as a mask in a region other than the region where the fine particle film 5 is to be formed. 1.0 g of SnO ₂ particles and an organic solvent (methyl ethyl ketone: cyclohexane = 3: 1,80)
0 cc) of each material was stirred with a glass bead for 24 hours on a paint shaker, and the resulting dispersion was spin-coated and baked at 250 ° C. for 10 minutes. After that, the previously deposited Cr was etched out. Thereby, the fine particle film 5 was formed.

When the cross section of one electrode gap portion of the element thus obtained is observed by FE-SEM, the angle θ formed between the electrodes 2 and 3 and the substrate 1 is about 70 ° C., and SnO ₂
The fine particles were formed so as to completely cover the electrodes.

An element having such a shape is placed in a vacuum container,
A face plate (not shown) was placed on the top, and heating for sealing was performed. After that, when the resistance value is measured, it is 2 KΩ,
It was about 1.2 times that before heating for sealing.

Further, when forming was performed while the container was evacuated to about 1.0 × 10 ^-6 torr, the forming voltage was 9 V, which was about 1.1 times as high as before the sealing and heating. It was Furthermore, by applying Va = 1 kV to the face plate above this device, stable electron emission was obtained. By thus setting the angle θ between the electrode end face and the insulating substrate to be 0 <θ ≦ 80 °, it was possible to prevent the resistance from becoming high at the time of sealing and to perform the forming stably without variation.

Embodiment 2 FIG. 3 is a schematic constitutional view showing an electron beam generator in this embodiment, in which a plurality of line electron emitting devices in which a plurality of electron emitting devices of the present invention are linearly arranged are provided. In the figure, 1 is a substrate,
Reference numerals 2a and 3a are element electrodes, 5 is a fine particle film, 8 is a wiring electrode, and 9 is an electron source made of this. Further, 10 is a modulation electrode, and 11 is an electron passage hole.

The electron beam generator of this embodiment is manufactured as follows. First, in the same manner as in Example 1, a plurality of device electrodes 2a and 3a and a fine particle film 5 arranged linearly were formed. Next, the wiring electrode 8 was formed as the electron source 9 in the same manner as the case where the device electrodes 2a and 3a were formed thereon. Further, the modulation electrode 10 composed of a grid electrode is formed through an insulator (not shown) by using a normal photolithography process.

These were placed in a vacuum vessel and sealed at 450 ° C., and after vacuum evacuating to a vacuum degree of 1 × 10 ^-6 torr,
Upon sealing and measuring the resistance value, the joint resistance of 1 line before sealing was 13Ω, which was 1.3 times that of 13Ω. When a voltage was applied between the device electrodes 2 and 3 to perform forming, stable forming was performed at 7 V, which was 1.1 times the forming voltage before the sealing and heating.

Further, a driving voltage 1 is applied between the device electrodes 2a and 3a.
4V was applied, and then a voltage according to the information signal was applied to the modulation electrode 10. That is, the electron beam could be off-controlled at 0 V or less, and on-controlled at +30 V or more. Also, 30 to 0
The electron amount of the electron beam could be continuously changed between V. As a result, an electron beam was emitted from a line electron emission element composed of a plurality of elements according to an information signal for one line. By sequentially performing the above operation on the adjacent electron beam emitting devices, electron beam emission corresponding to all information signals was obtained.

In the electron beam generator of this embodiment, the angle θ between the element electrodes 2a and 3a of the electron source and the insulating substrate 1 is 0 <.
By setting θ ≦ 80 °, the element electrode 2 of the fine particle film 5 is formed.
It was possible to improve the coverage to a and 3a and prevent the element resistance from increasing after the sealing heating. From this fact, there is an effect that the forming can be performed uniformly and stably at a low voltage at the time of forming each element, and further, the variation of the electron beam emitted from each element is extremely small and a uniform electron beam can be obtained.

Embodiment 3 FIG. 4 shows a schematic structure of an image display device in this embodiment having an electron source in which a large number of electron-emitting devices of the present invention are arranged. In the figure, 13 is an image forming plate, and 12 is a phosphor which is an image forming member, and emits light when electrons collide. 14 is a bright spot of the phosphor. In this figure, the same reference numerals as those used in the electron beam generator shown in FIG. 3 denote the same members, and a repetitive description thereof will be omitted.

In this image display device, XY matrix driving is performed by the electron source 9 in which a plurality of elements are arranged between the wiring electrodes 8 and the modulation electrode 10 composed of a grid electrode, and electrons are emitted to the phosphor 12 on the image forming plate 13. It is a device that forms an image by colliding.

In the image display device of this example, first, an electron beam generator was prepared in the same manner as in example 2, placed in a vacuum container and sealed at 450 ° C., and the degree of vacuum was 1 × 10 ⁻⁶ torr.
After vacuum vacuuming and sealing, the resistance value was measured and found to be about 1.2 to 1.5 times that before sealing as in Example 2. Forming was performed by applying a voltage between the device electrodes 2 and 3. At this time, stable forming was possible at 7V.

Next, the image forming plate 13 having the phosphor 12 was placed vertically above the electron beam generator, and a voltage of 5 KV was applied. As a result, the bright spot 14 on the image forming body 13 was one electron-emitting device. In addition to showing uniform brightness in the interior, uniform brightness was obtained among a plurality of elements arranged in parallel.

As described above, the image display apparatus using the electron source in which a plurality of electron-emitting devices of the present invention are arranged can prevent the increase of the resistance of the element after the heating for the sealing, and makes it uniform during the forming of the element. Moreover, stable forming was possible at a low voltage. Furthermore, the bright spots on the image forming plate 13 have little variation in luminance, and an image with more uniform luminance can be obtained.

[0063]

As described above, according to the present invention, the following effects can be obtained. The angle θ between the end surface of the electron electrode and the insulating substrate is 0 <θ
By setting ≦ 80 °, the coverage by the fine particle film on the end face of the electrode is improved, the element does not have a high resistance even after the heating for sealing, and the forming can be performed uniformly and at a low voltage, and the electron emission element has a good yield. Can be produced.

It is possible to obtain an electron beam generator which can perform stable forming at a low voltage, has a very small variation in the electron beam emitted from each element, and generates a uniform electron beam.

Since stable forming can be performed at a low voltage, uniform bright spots without variations can be obtained among a plurality of elements, and the image display device using the electron-emitting device of the present invention has a more uniform brightness. An image is obtained.

[Brief description of drawings]

FIG. 1 is a schematic view showing an example of an electron-emitting device of the present invention.

FIG. 2 is a schematic view showing a conventional electron-emitting device.

FIG. 3 is a schematic view showing an example of an electron beam generator of the present invention.

FIG. 4 is a schematic view showing an example of an image display device of the present invention.

FIG. 5 is an explanatory diagram showing a typical device configuration of a conventional surface conduction electron-emitting device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Insulating substrate 2, 3 Element electrode 2a, 3a Element electrode 4 Electron emission part 5 Fine particle film 7 Element electrode oxidized part 8 Wiring electrode 9 Electron source 10 Modulation electrode 11 Electron passing hole 12 Fluorescent plate 13 Image forming plate 14 Bright spot 15 Thin film 16 Electrode end face L Electrode gap

Front page continued (72) Inventor Kazuhiro Michi 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Shinichi Kawate 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Incorporated (72) Inventor Toshihiko Takeda 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Ichiro Nomura 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc.

Claims (4)

[Claims] 1. An electron-emitting device having a pair of electrodes on an insulating substrate and a fine particle film for electrically connecting the pair of electrodes to an electrode gap between the electrodes, the electrode facing the electrode gap. The angle θ between the end surface and the insulating substrate is 0 <
An electron-emitting device characterized in that θ ≦ 80 °. 2. The electron-emitting device according to claim 1, wherein the fine particle film is a film formed by a dispersion coating method. 3. An electron beam generator comprising: an electron source having at least a plurality of the electron-emitting devices according to claim 1 arranged therein; and a modulation means for modulating an electron beam emitted from the electron source. 4. An electron source in which at least a plurality of the electron-emitting devices according to claim 1 are arranged, a modulation means for modulating an electron beam emitted from the electron source, and an image forming member for forming an image by irradiation of the electron beam. An image display device comprising: