JPH0943288A - Electric field sensor - Google Patents

Electric field sensor

Info

Publication number
JPH0943288A
JPH0943288A JP19527895A JP19527895A JPH0943288A JP H0943288 A JPH0943288 A JP H0943288A JP 19527895 A JP19527895 A JP 19527895A JP 19527895 A JP19527895 A JP 19527895A JP H0943288 A JPH0943288 A JP H0943288A
Authority
JP
Japan
Prior art keywords
electric field
field sensor
optical waveguide
substrate
optical fiber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19527895A
Other languages
Japanese (ja)
Inventor
Yuichi Togano
祐一 戸叶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokin Corp filed Critical Tokin Corp
Priority to JP19527895A priority Critical patent/JPH0943288A/en
Publication of JPH0943288A publication Critical patent/JPH0943288A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a highly reliable photoelectric field sensor. SOLUTION: This electric field sensor includes a receiving antenna 1, an electric field sensor head 2, an incoming optical fiber 3 and an outgoing optical fiber 4, a light source 5 and a photo detector 6. The electric field sensor head 2 has a substrate 7, an optical waveguide 8 and a modulation electrode 9. The waveguide 8 has an incoming optical waveguide 10, two phase shift optical waveguides 11 and an outgoing optical waveguide 12. The modulation electrode is formed near at least one of the two phase shift optical waveguides 11 and moreover, has a high resistance conductive film 16 formed on the surface of the substrate 7 so as not to be connected to the optical waveguide 8 and the modulation electrode 9.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、放射電磁波等の電
界強度の測定するために用いる電界センサに関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electric field sensor used for measuring the electric field strength of radiated electromagnetic waves and the like.

【0002】[0002]

【従来の技術】電界センサを構成する光変調器は、例え
ば1例として、電気光学効果を持つ光学結晶基板の上
に、入射光を2分岐した後、合波させる構造の光導波路
を形成し、分岐された2本のそれぞれの光導波路近傍に
変調用電極を配置する構造を有している。自然または強
制発生した電界は、アンテナ部を通して前記電極に伝わ
り、電気光学効果によって電極の近傍の光導波路を伝搬
する光に位相変調を起こさせる。この後合波された光
は、干渉して強度変調を起こすため、電界の強さに応じ
た光強度を得られる特徴を有している。光変調器への印
加電圧による出力光強度は横軸に印加電圧をとり、縦軸
に出力光強度をとると、三角関数となる。電界センサに
使用する光変調器は、変調用電極への印加電圧が0Vで
ある場合の出力光強度が最大値と最小値の間の直線部分
の中点にあることが望ましい。このような光学バイアス
位置にあれば微少な電圧変化も光強度変化として顕著に
現れるため、電界センサの感度の向上にもつながる。
2. Description of the Related Art As an example of an optical modulator constituting an electric field sensor, an optical waveguide having a structure in which incident light is split into two and then combined is formed on an optical crystal substrate having an electro-optical effect. The modulation electrode is arranged near each of the two branched optical waveguides. The natural or forcibly generated electric field is transmitted to the electrode through the antenna section and causes phase modulation in the light propagating in the optical waveguide near the electrode due to the electro-optic effect. The lights combined after this interfere with each other to cause intensity modulation, and thus have the feature that the light intensity corresponding to the strength of the electric field can be obtained. The output light intensity due to the applied voltage to the optical modulator is a trigonometric function, where the horizontal axis represents the applied voltage and the vertical axis represents the output light intensity. The optical modulator used for the electric field sensor is preferably located at the midpoint of the straight line portion between the maximum value and the minimum value of the output light intensity when the voltage applied to the modulation electrode is 0V. At such an optical bias position, even a slight voltage change significantly appears as a light intensity change, which leads to an improvement in the sensitivity of the electric field sensor.

【0003】[0003]

【発明が解決しようとする課題】従来の電界センサにお
いては、光変調器はLiNbO3 の結晶基板が多く用い
られている。このLiNbO3 の結晶基板は、焦電気効
果を有し外部環境温度変化や変調電極間に蓄積する電荷
によって、その屈折率を変化させてしまうため、前述光
学バイアス位置を変動させてしまう。すなわち、変調電
極にDC電圧が印加されたような特性を示すようにな
る。このような光学バイアス位置の変動は、前述したと
おり電界センサの感度を劣化させるだけでなく、発生す
る電荷が不安定であるため、測定中でもその変動は収ま
らず、正確な電界強度測定はできなくなるという問題が
ある。このため、基板の表面に導電膜を形成する方法が
考えられるが、光導波路の近傍の変調電極部に直接に導
電膜が形成されることにより、周波数共振が起こること
がある。
In the conventional electric field sensor, a LiNbO 3 crystal substrate is often used as an optical modulator. This LiNbO 3 crystal substrate has a pyroelectric effect and changes its refractive index due to changes in the external environment temperature and electric charges accumulated between the modulation electrodes, and thus changes the optical bias position. That is, the characteristics are such that a DC voltage is applied to the modulation electrode. Such a change in the optical bias position not only deteriorates the sensitivity of the electric field sensor as described above, but also the generated electric charge is unstable, so that the change does not subside even during measurement, and accurate electric field strength measurement cannot be performed. There is a problem. Therefore, a method of forming a conductive film on the surface of the substrate is conceivable, but frequency resonance may occur due to the conductive film being formed directly on the modulation electrode portion near the optical waveguide.

【0004】本発明の目的は、温度環境の変化による光
学バイアス点の変動を大幅に低減して信頼性の高い光電
界センサを提供することにある。
An object of the present invention is to provide a highly reliable optical electric field sensor in which fluctuations in the optical bias point due to changes in temperature environment are significantly reduced.

【0005】[0005]

【課題を解決するための手段】本発明は、前記課題を解
決するために、入力信号を受ける受信用アンテナと、こ
の受信用アンテナで受ける前記入力信号の電界強度に応
じて透過する光の強度が変化するように構成された電界
センサヘッドと、この電界センサヘッドに接続された入
射光ファイバおよび出射光ファイバと、前記入射光ファ
イバの一端に接続されこの入射光ファイバに光を放射す
る光源と、前記電界センサヘッドからの透過光を前記出
射光ファイバを介して受けて前記透過光を検出する光検
出器とを具備する電界センサにおいて、前記電界センサ
ヘッドは、基板と、前記入射光ファイバに接続されるよ
うに前記基板の表面に形成された光導波路と変調電極と
を有し、この光導波路は、前記基板の表面の1端部に形
成された入射光導波路と、この入射光導波路より分岐す
るように形成され電界の強度に応じて屈折率が変化する
2つの位相シフト光導波路と、前記出射光ファイバに接
続され前記2つの位相シフト光導波路が合流するように
前記基板の表面の他端部に形成された出射光導波路とを
有し、前記変調電極は前記2つの位相シフト光導波路の
うち少なくとも一方の近傍に形成され、さらに前記光導
波路と前記変調電極とに接続しないように前記基板の表
面に形成された高抵抗導電膜を有することを特徴とす
る。
In order to solve the above problems, the present invention provides a receiving antenna that receives an input signal, and the intensity of light that is transmitted by the receiving antenna according to the electric field strength of the input signal. An electric field sensor head configured to change, an incident optical fiber and an outgoing optical fiber connected to the electric field sensor head, and a light source connected to one end of the incident optical fiber to emit light to the incident optical fiber. An electric field sensor that receives transmitted light from the electric field sensor head via the emission optical fiber and detects the transmitted light, wherein the electric field sensor head includes a substrate and an incident optical fiber. It has an optical waveguide and a modulation electrode formed on the surface of the substrate so as to be connected to each other, and the optical waveguide is an incident optical waveguide formed on one end of the surface of the substrate. A path, two phase shift optical waveguides formed so as to be branched from the incident optical waveguide and having a refractive index varying according to the strength of an electric field, and the two phase shift optical waveguides connected to the emission optical fiber and joined together. And an emission optical waveguide formed on the other end of the surface of the substrate, the modulation electrode is formed in the vicinity of at least one of the two phase shift optical waveguides, and the optical waveguide and the modulation are provided. A high resistance conductive film is formed on the surface of the substrate so as not to connect to the electrodes.

【0006】[0006]

【発明の実施の形態】次に、本発明の実施例を図面に基
いて詳細に説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described in detail with reference to the drawings.

【0007】図1は、本発明の第1の実施例を示す正面
図である。図2は、本発明の第1の実施例の要部を拡大
して示す斜面図である。図1および図2に示すように、
本発明の電界センサは、受信用アンテナ1と、電界セン
サヘッド2と、入射光ファイバ3と、出射光ファイバ4
と、光源5と、光検出器6とを具備している。
FIG. 1 is a front view showing a first embodiment of the present invention. FIG. 2 is an enlarged perspective view showing a main part of the first embodiment of the present invention. As shown in FIGS. 1 and 2,
The electric field sensor of the present invention comprises a receiving antenna 1, an electric field sensor head 2, an incident optical fiber 3, and an outgoing optical fiber 4.
And a light source 5 and a photodetector 6.

【0008】前記受信用アンテナ1は、入力信号を受け
る。前記電界センサヘッド2は、前記受信用アンテナ1
に接続されている。前記電界センサヘッド2は、前記受
信用アンテナ1からの入力信号を受け電界強度に応じて
透過する光の強度が変化するように構成されている。前
記入射光ファイバ3および前記出射光ファイバ4は、前
記電界センサヘッド2に接続されている。前記光源5
は、前記入射光ファイバ4の一端に接続されこの入射光
ファイバ3に光を放射する。前記光検出器6は、前記電
界センサヘッド2からの透過光を前記出射光ファイバ4
を介して受けて前記透過光を検出する。
The receiving antenna 1 receives an input signal. The electric field sensor head 2 includes the reception antenna 1
It is connected to the. The electric field sensor head 2 is configured to receive the input signal from the receiving antenna 1 and to change the intensity of the transmitted light according to the electric field intensity. The incident optical fiber 3 and the outgoing optical fiber 4 are connected to the electric field sensor head 2. The light source 5
Is connected to one end of the incident optical fiber 4 and emits light to the incident optical fiber 3. The photodetector 6 transmits the transmitted light from the electric field sensor head 2 to the emission optical fiber 4
The transmitted light is detected by receiving the light through.

【0009】前記電界センサヘッド2は、基板7と、光
導波路8と、2つの変調電極9とを有している。前記光
導波路8は、入射光導波路10と、2つの位相シフト光
導波路11と、出射光導波路12とを有する。前記入射
光導波路10は、前記入射光ファイバ3に接続されるよ
うに前記基板7の表面の1端部に形成されている。前記
2つの位相シフト光導波路11は、前記入射光導波路1
0より分岐するように前記基板7の表面に形成され、か
つ、電界の強度に応じて屈折率が変化する。前記出射光
導波路12は、前記出射光ファイバ4に接続され前記2
つの位相シフト光導波路11が合流するように前記基板
7の表面の他端部に形成されている。前記変調電極9
は、前記2つの位相シフト光導波路11の近傍に形成さ
れている。前記受信用アンテナ1は、変調電極11の電
極パッド13にリード線14を介して接続されている。
The electric field sensor head 2 has a substrate 7, an optical waveguide 8 and two modulation electrodes 9. The optical waveguide 8 has an incident optical waveguide 10, two phase shift optical waveguides 11 and an outgoing optical waveguide 12. The incident optical waveguide 10 is formed at one end of the surface of the substrate 7 so as to be connected to the incident optical fiber 3. The two phase shift optical waveguides 11 are the same as the incident optical waveguides 1.
It is formed on the surface of the substrate 7 so as to branch from 0, and the refractive index changes according to the strength of the electric field. The output optical waveguide 12 is connected to the output optical fiber 4 and
The two phase shift optical waveguides 11 are formed at the other end of the surface of the substrate 7 so as to merge. The modulation electrode 9
Are formed in the vicinity of the two phase shift optical waveguides 11. The receiving antenna 1 is connected to the electrode pad 13 of the modulation electrode 11 via a lead wire 14.

【0010】前記基板7は、c軸に垂直に切りだしたニ
オブ酸リチウム単結晶板からなる。この基板7上にチタ
ンを拡散して前記入射光導波路10と前記位相シフト光
導波路11および前記出射光導波路12が形成されてい
る。前記入射光ファイバ3からの入射光は、入射光導波
路10に入射した後、2つの位相シフト光導波路11に
分岐される。受信用アンテナ1が入力信号を受ける時に
この入力信号より変調電極9に電圧が誘起されて2つの
位相シフト光導波路11の中には深さ方向に互いに反対
向きの電界成分が生じる。
The substrate 7 is composed of a lithium niobate single crystal plate cut out perpendicularly to the c-axis. On the substrate 7, titanium is diffused to form the incident optical waveguide 10, the phase shift optical waveguide 11 and the outgoing optical waveguide 12. The incident light from the incident optical fiber 3 is incident on the incident optical waveguide 10 and then split into two phase shift optical waveguides 11. When the receiving antenna 1 receives an input signal, a voltage is induced in the modulation electrode 9 by this input signal, and electric field components in opposite directions in the depth direction are generated in the two phase shift optical waveguides 11.

【0011】この結果、2つの位相シフト光導波路11
に電気光学効果により屈折率変化が生じて2つの位相シ
フト光導波路11が伝搬する光の間には印加電界の大き
さに応じた位相差が生じ、それらの光が合流して出射光
導波路12で結合して出射光となる時に干渉により光強
度が変化する。すなわち、印加される電界強度に応じて
出射光ファイバ12に出射する出射光の強度は変化する
ことになり、その光強度の変化を光検出器6で測定する
ことにより印加電界の強度を測定できる。
As a result, the two phase shift optical waveguides 11
A phase difference corresponding to the magnitude of the applied electric field is generated between the lights propagating through the two phase shift optical waveguides 11 due to the change in the refractive index due to the electro-optic effect, and the lights are merged to form the output optical waveguide 12. The light intensity changes due to the interference when the light is combined with each other to form emitted light. That is, the intensity of the outgoing light emitted to the outgoing optical fiber 12 changes according to the applied electric field intensity, and the intensity of the applied electric field can be measured by measuring the change in the optical intensity with the photodetector 6. .

【0012】前記電界センサヘッド2は、さらに前記光
導波路8に接触せず前記変調電極9を覆うように形成さ
れた電気絶縁体板15と、前記基板7と前記電気絶縁体
板15の表面に前記光導波路8に接触しないように形成
された高抵抗導電膜16を有している。前記電気絶縁体
板15は、例えばセラミック板からなり、電極パッド1
3を少し露出させて、接着剤によって接着されている。
前記高抵抗導電膜16は、例えば厚さがほぼ100オン
グストロームであるCrの薄膜からなる。
The electric field sensor head 2 further includes an electric insulator plate 15 formed so as to cover the modulation electrode 9 without coming into contact with the optical waveguide 8, and a surface of the substrate 7 and the electric insulator plate 15. It has a high resistance conductive film 16 formed so as not to contact the optical waveguide 8. The electric insulator plate 15 is made of, for example, a ceramic plate, and the electrode pad 1
3 is exposed a little and adhered by an adhesive.
The high resistance conductive film 16 is formed of a Cr thin film having a thickness of, for example, about 100 angstroms.

【0013】なお、前記電気絶縁体板15を設けない
で、高抵抗導電16を膜前記光導波路8と前記変調電極
9とに接続しないように前記基板7の表面に形成しても
よい。また、前記受信用アンテナと前記変調電極とを接
続するリード線を前記高抵抗導電膜に接続してもよい。
It should be noted that the high-resistance conductor 16 may be formed on the surface of the substrate 7 so as not to connect the film optical waveguide 8 and the modulation electrode 9 without providing the electric insulator plate 15. Further, a lead wire connecting the receiving antenna and the modulation electrode may be connected to the high resistance conductive film.

【0014】[0014]

【発明の効果】本発明によれば、基板中に生じた電荷を
結晶軸方向に短絡させて中和させることができるから、
温度環境の変化による光学バイアス点の変動を大幅に低
減して信頼性の高い光電界センサを提供することができ
る。
According to the present invention, the charge generated in the substrate can be short-circuited in the crystal axis direction to be neutralized.
A highly reliable optical electric field sensor can be provided by significantly reducing the fluctuation of the optical bias point due to the change of the temperature environment.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の1実施例を示す正面図である。FIG. 1 is a front view showing one embodiment of the present invention.

【図2】図1の1実施例の要部を拡大して示す斜視図で
ある。
FIG. 2 is an enlarged perspective view showing a main part of one embodiment of FIG.

【符号の説明】[Explanation of symbols]

1 受信用アンテナ 2 電界センサヘッド 3 入射光ファイバ 4 出射光ファイバ 5 光源 6 光検出器 7 基板 8 光導波路 9 変調電極 10 入射光導波路 11 位相シフト光導波路 12 出射光導波路 13 電極パッド 14 リード線 15 電気絶縁板 16 高抵抗導電膜 1 reception antenna 2 electric field sensor head 3 incident optical fiber 4 emission optical fiber 5 light source 6 photodetector 7 substrate 8 optical waveguide 9 modulation electrode 10 incident optical waveguide 11 phase shift optical waveguide 12 emission optical waveguide 13 electrode pad 14 lead wire 15 Electrical insulation board 16 High resistance conductive film

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 入力信号を受ける受信用アンテナと、こ
の受信用アンテナで受ける前記入力信号の電界強度に応
じて透過する光の強度が変化するように構成された電界
センサヘッドと、この電界センサヘッドに接続された入
射光ファイバおよび出射光ファイバと、前記入射光ファ
イバの一端に接続されこの入射光ファイバに光を放射す
る光源と、前記電界センサヘッドからの透過光を前記出
射光ファイバを介して受けて前記透過光を検出する光検
出器とを具備する電界センサにおいて、前記電界センサ
ヘッドは、基板と、前記入射光ファイバに接続されるよ
うに前記基板の表面に形成された光導波路と変調電極と
を有し、この光導波路は、前記基板の表面の1端部に形
成された入射光導波路と、この入射光導波路より分岐す
るように形成され電界の強度に応じて屈折率が変化する
2つの位相シフト光導波路と、前記出射光ファイバに接
続され前記2つの位相シフト光導波路が合流するように
前記基板の表面の他端部に形成された出射光導波路とを
有し、前記変調電極は前記2つの位相シフト光導波路の
うち少なくとも一方の近傍に形成され、さらに前記光導
波路と前記変調電極とに接続しないように前記基板の表
面に形成された高抵抗導電膜を有することを特徴とする
電界センサ。
1. A receiving antenna for receiving an input signal, an electric field sensor head configured to change the intensity of light passing therethrough according to the electric field strength of the input signal received by the receiving antenna, and the electric field sensor. An incident optical fiber and an outgoing optical fiber connected to the head, a light source connected to one end of the incident optical fiber to radiate light to the incident optical fiber, and transmitted light from the electric field sensor head through the outgoing optical fiber. In the electric field sensor, the electric field sensor head comprises a substrate and an optical waveguide formed on the surface of the substrate so as to be connected to the incident optical fiber. A modulation electrode, and the optical waveguide is formed so as to branch from the incident optical waveguide formed at one end of the surface of the substrate and the incident optical waveguide. The two phase shift optical waveguides whose refractive index changes according to the strength of the field, and the two phase shift optical waveguides connected to the emission optical fiber and formed on the other end of the surface of the substrate so as to merge. An emission optical waveguide, the modulation electrode is formed in the vicinity of at least one of the two phase shift optical waveguides, and further formed on the surface of the substrate so as not to be connected to the optical waveguide and the modulation electrode. An electric field sensor having a high resistance conductive film.
【請求項2】 請求項1に記載の電界センサにおいて、
前記電界センサヘッドは、さらに前記光導波路に接触せ
ず前記変調電極を覆うように形成された電気絶縁体板
と、前記基板と前記電気絶縁体板の表面に前記光導波路
に接触しないように形成された高抵抗導電膜を有するこ
とを特徴とする電界センサ。
2. The electric field sensor according to claim 1, wherein:
The electric field sensor head further includes an electric insulator plate formed so as to cover the modulation electrode without coming into contact with the optical waveguide, and surfaces of the substrate and the electric insulator plate formed so as not to come into contact with the optical waveguide. Electric field sensor having a high resistance conductive film.
【請求項3】 請求項1または請求項2に記載の電界セ
ンサにおいて、前記受信用アンテナと前記変調電極とを
接続するリード線を前記高抵抗導電膜に接続したことを
特徴とする電界センサ。
3. The electric field sensor according to claim 1 or 2, wherein a lead wire connecting the receiving antenna and the modulation electrode is connected to the high resistance conductive film.
JP19527895A 1995-07-31 1995-07-31 Electric field sensor Pending JPH0943288A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19527895A JPH0943288A (en) 1995-07-31 1995-07-31 Electric field sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19527895A JPH0943288A (en) 1995-07-31 1995-07-31 Electric field sensor

Publications (1)

Publication Number Publication Date
JPH0943288A true JPH0943288A (en) 1997-02-14

Family

ID=16338508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19527895A Pending JPH0943288A (en) 1995-07-31 1995-07-31 Electric field sensor

Country Status (1)

Country Link
JP (1) JPH0943288A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006242840A (en) * 2005-03-04 2006-09-14 Nec Tokin Corp Photoelectric field sensor and directivity adjusting method for the same
CN106124870A (en) * 2016-06-12 2016-11-16 中国科学院电子学研究所 Electrode type electric-field sensor potted element and application thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006242840A (en) * 2005-03-04 2006-09-14 Nec Tokin Corp Photoelectric field sensor and directivity adjusting method for the same
CN106124870A (en) * 2016-06-12 2016-11-16 中国科学院电子学研究所 Electrode type electric-field sensor potted element and application thereof
CN106124870B (en) * 2016-06-12 2019-12-20 中国科学院电子学研究所 Electrode type electric field sensor package element and use thereof

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