JPH0941131A - Production of high purity iridium or ruthenium sputtering target - Google Patents
Production of high purity iridium or ruthenium sputtering targetInfo
- Publication number
- JPH0941131A JPH0941131A JP21422095A JP21422095A JPH0941131A JP H0941131 A JPH0941131 A JP H0941131A JP 21422095 A JP21422095 A JP 21422095A JP 21422095 A JP21422095 A JP 21422095A JP H0941131 A JPH0941131 A JP H0941131A
- Authority
- JP
- Japan
- Prior art keywords
- purity
- ingot
- target
- raw material
- sputtering target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、高純度Ｉｒ薄膜
またはＲｕ薄膜を形成するための高純度ＩｒまたはＲｕ
スパッタリングターゲットの製造方法に関するものであ
る。TECHNICAL FIELD The present invention relates to a high-purity Ir or Ru thin film for forming a high-purity Ir thin film or Ru thin film.
The present invention relates to a method for manufacturing a sputtering target.
【０００２】[0002]
【従来の技術】従来、高集積度半導体メモリーのキャパ
シタの電極にはスパッタリングにより形成されたＰｔ膜
が使用されていた。しかし、Ｐｔ膜はドライエッチング
による加工性が悪いことおよび誘電体である（ＢａＳ
ｒ）ＴｉＯ3 のＴｉとＳｉ基板のＳｉがＰｔ膜に拡散し
て複合化合物を形成し、キャパシタ特性を変化させるな
どの欠点があるために、近年、半導体メモリーのキャパ
シタ用電極にＩｒまたはＲｕ膜を使用することが検討さ
れはじめている。2. Description of the Related Art Conventionally, a Pt film formed by sputtering has been used as an electrode of a capacitor of a highly integrated semiconductor memory. However, the Pt film has poor workability due to dry etching and is a dielectric (BaS).
r) Ti of TiO 3 and Si of a Si substrate diffuse into a Pt film to form a complex compound, which causes a change in capacitor characteristics. Therefore, in recent years, an Ir or Ru film has been used for a capacitor electrode of a semiconductor memory. The use of is beginning to be considered.
【０００３】このキャパシタ用電極となるＩｒまたはＲ
ｕ膜は、Ｉｒ粉末またはＲｕ粉末をそれぞれホットプレ
スして得られたホットプレスＩｒターゲットまたはホッ
トプレスＲｕターゲットをスパッタリングすることによ
り得られるが、一方、ＩｒまたはＲｕを溶解したのち熱
間圧延して得られた溶解Ｉｒターゲットまたは溶解Ｒｕ
ターゲットを用いてスパッタリングすることにより形成
することもできる。Ir or R to be the electrode for this capacitor
The u film can be obtained by sputtering a hot-pressed Ir target or a hot-pressed Ru target obtained by hot-pressing Ir powder or Ru powder, respectively, while melting the Ir or Ru and then hot-rolling it. Obtained dissolved Ir target or dissolved Ru
It can also be formed by sputtering using a target.
【０００４】ホットプレスＩｒターゲットを用いて形成
されたＩｒ膜と溶解Ｉｒターゲットを用いて形成された
Ｉｒ膜を比較すると、溶解Ｉｒターゲットを用いて形成
されたＩｒ膜の方が膜質が優れている。またホットプレ
スＲｕターゲットを用いて形成されたＲｕ膜よりも溶解
Ｒｕターゲットを用いて形成されたＲｕ膜の方が膜質が
優れている。したがって、近年の高集積度半導体メモリ
ーのキャパシタ電極用Ｉｒ膜またはＲｕ膜は、それぞれ
溶解Ｉｒターゲットまたは溶解Ｒｕターゲットを用いて
スパッタリングを行うことにより形成している。Comparing an Ir film formed using a hot-pressed Ir target and an Ir film formed using a dissolved Ir target, the Ir film formed using a dissolved Ir target is superior in film quality. . Further, the film quality of the Ru film formed using the molten Ru target is superior to that of the Ru film formed using the hot-pressed Ru target. Therefore, the Ir film or Ru film for the capacitor electrode of the recent highly integrated semiconductor memory is formed by sputtering using a dissolved Ir target or a dissolved Ru target, respectively.
【０００５】溶解Ｉｒターゲットまたは溶解Ｒｕターゲ
ットは、市販の純度９９．９〜９９．９９重量％（３Ｎ
〜４Ｎ）のＩｒ原料またはＲｕ原料を溶解してＩｒイン
ゴットまたはＲｕインゴットを作製し、これらインゴッ
トを大気中で熱間圧延することにより製造する。The dissolved Ir target or the dissolved Ru target has a commercially available purity of 99.9 to 99.99% by weight (3N).
~ 4N) Ir raw material or Ru raw material is melted to prepare an Ir ingot or Ru ingot, and these ingots are hot-rolled in the atmosphere for production.
【０００６】Ｉｒ原料またはＲｕ原料の溶解は、通常、
電気ビーム溶解またはプラズマアーク溶解により行なわ
れるが、電子ビーム溶解ではＩｒインゴットまたはＲｕ
インゴット内部に気泡が発生しやすく、この気泡がイン
ゴットの熱間圧延時のクラック発生の原因となるため
に、通常はプラズマアーク溶解により行なわれている。The dissolution of Ir raw material or Ru raw material is usually performed by
It is performed by electric beam melting or plasma arc melting, but in electron beam melting, Ir ingot or Ru is used.
Bubbles are likely to be generated inside the ingot, and these bubbles cause cracks during hot rolling of the ingot. Therefore, plasma arc melting is usually performed.
【０００７】上記プラズマアーク溶解して得られた溶解
Ｉｒターゲットまたは溶解Ｒｕターゲットは、市販のＩ
ｒ原料またはＲｕ原料の純度と同じ９９．９〜９９．９
９重量％（３Ｎ〜４Ｎ）の純度を有している。The melted Ir target or the melted Ru target obtained by plasma arc melting is a commercially available I target.
99.9 to 99.9, which has the same purity as the r raw material or the Ru raw material
It has a purity of 9% by weight (3N to 4N).
【０００８】[0008]
【発明が解決しようとする課題】しかし、高集積度半導
体メモリーのキャパシタ用電極としてのＩｒ膜またはＲ
ｕ膜は高純度であるほど好ましく、そのために一層高純
度の溶解Ｉｒターゲットまたは溶解Ｒｕターゲットが求
められていた。However, an Ir film or R as an electrode for a capacitor of a highly integrated semiconductor memory is used.
The higher the purity of the u film, the more preferable it is. Therefore, a higher purity of a dissolved Ir target or a dissolved Ru target has been demanded.
【０００９】[0009]
【課題を解決するための手段】かかる観点から本発明者
等も一層高純度の溶解Ｉｒターゲットまたは溶解Ｒｕタ
ーゲットの製造方法を開発すべく研究を行っていたとこ
ろ、 （ａ） Ｉｒ原料またはＲｕ原料を電子ビーム溶解して
得られたＩｒインゴットまたはＲｕインゴットには内部
に気泡が生成するが、Ｉｒ原料またはＲｕ原料よりも不
純物含有量が少なくなり、純度９９．９重量％（３Ｎ）
のＩｒ原料またはＲｕ原料を電子ビーム溶解して得られ
たＩｒインゴットまたはＲｕインゴットは純度：９９．
９９９重量％（５Ｎ）以上まで向上する。From this point of view, the inventors of the present invention have been conducting research to develop a method for producing a higher purity dissolved Ir target or a dissolved Ru target. (A) Ir raw material or Ru raw material Bubbles are generated in the Ir ingot or Ru ingot obtained by electron beam melting, but the impurity content is smaller than that of the Ir raw material or Ru raw material, and the purity is 99.9% by weight (3N).
The Ir ingot or Ru ingot obtained by electron beam melting of the Ir raw material or Ru raw material of No. 3 has a purity of 99.
Improve to 999% by weight (5N) or more.
【００１０】（ｂ） 電子ビーム溶解して得られた９
９．９９９重量％以上のＩｒインゴットまたはＲｕイン
ゴットには気泡が含まれているが、これらＩｒインゴッ
トまたはＲｕインゴットを金属容器に入れて熱間圧延す
ると、熱間圧延中の割れは全く発生しない。などの知見
を得たのである。(B) 9 obtained by electron beam melting
The Ir ingot or Ru ingot of 9.999% by weight or more contains air bubbles, but when these Ir ingot or Ru ingot are hot-rolled in a metal container, cracking during hot rolling does not occur at all. We have obtained such knowledge.
【００１１】この発明は、かかる知見に基づいてなされ
たものであって、 （１） Ｉｒ原料を電子ビーム溶解し、得られたＩｒイ
ンゴットを金属容器に入れて熱間圧延する純度：９９．
９９９重量％以上の高純度Ｉｒスパッタリングターゲッ
トの製造方法。The present invention has been made on the basis of such findings. (1) The Ir raw material is melted by electron beam, and the obtained Ir ingot is put into a metal container and hot-rolled. Purity: 99.
A method for producing a high-purity Ir sputtering target of 999% by weight or more.
【００１２】（２） Ｒｕ原料を電子ビーム溶解し、得
られたＲｕインゴットを金属容器に入れて熱間圧延する
純度：９９．９９９重量％以上の高純度Ｒｕスパッタリ
ングターゲットの製造方法、に特徴を有するものであ
る。(2) A method for producing a high-purity Ru sputtering target in which a Ru raw material is melted by an electron beam and the obtained Ru ingot is placed in a metal container and hot-rolled. The purity is 99.999% by weight or more. I have.
【００１３】[0013]
実施例１ 市販のＩｒ原料を用意し、このＩｒ原料の不純物濃度お
よび純度を測定し、それらの測定結果を表１に示した。Example 1 A commercially available Ir raw material was prepared, the impurity concentration and the purity of this Ir raw material were measured, and the measurement results are shown in Table 1.
【００１４】[0014]
【表１】 [Table 1]
【００１５】表１に示される純度のＩｒ原料を、電圧：
１０ＫＶ、電流値：０．８Ａ、雰囲気：１×１０-5Torr
の条件で電子ビーム溶解し、水冷ハース内で凝固させ
て、直径：１５０mm、厚さ：２０mmの寸法を有するＩｒ
円盤状インゴットを作製した。Ir raw materials having the purities shown in Table 1 were charged at a voltage of:
10KV, current value: 0.8A, atmosphere: 1 × 10 -5 Torr
Electron beam melted under the conditions of No. 1 and solidified in a water-cooled hearth, and Ir having a size of diameter: 150 mm, thickness: 20 mm
A disc-shaped ingot was produced.
【００１６】この電子ビーム溶解して得られたＩｒ円盤
状インゴット（以下、ＥＢＩｒ円盤状インゴットとい
う）の不純物濃度および純度を測定し、その結果を表２
に示した。The impurity concentration and the purity of the Ir disk-shaped ingot (hereinafter referred to as EBIr disk-shaped ingot) obtained by the electron beam melting were measured, and the results are shown in Table 2.
It was shown to.
【００１７】[0017]
【表２】 [Table 2]
【００１８】このＥＢＩｒ円盤状インゴットを内部にＢ
Ｎ離型剤を塗布したＳＵＳ３１０Ｓステンレス鋼製の缶
に入れ、缶の内部をロータリーポンプで１Torr以下の真
空に引き、吸引した口を潰して封じ込め、１２５０℃に
加熱して熱間圧延し、機械加工によりステンレス缶を除
去し、直径：３００mm、厚さ：５mmの寸法の溶解Ｉｒタ
ーゲットを作製した。上記機械加工によりステンレス缶
を除去して圧延されたＩｒターゲットの表面を目視によ
り観察したが、圧延時の割れは全く見られなかった。The EBIr disc-shaped ingot is internally B
Put it in a can made of SUS310S stainless steel coated with N release agent, evacuate the inside of the can to a vacuum of 1 Torr or less with a rotary pump, crush the suctioned mouth and confine it, heat it to 1250 ° C, hot roll it, machine The stainless can was removed by processing, and a molten Ir target having a diameter of 300 mm and a thickness of 5 mm was prepared. The surface of the Ir target rolled by removing the stainless steel can by the above-mentioned machining was visually observed, but no cracks were observed during rolling.
【００１９】従来例１ 実施例１で用意したＩｒ原料をＡｒ雰囲気中のプラズマ
アーク溶解し、水冷ハース内で凝固させて直径：１５０
mm、厚さ：２０mmの寸法を有するＩｒ円盤状インゴット
を作製し、このプラズマアーク溶解して得られたＩｒ円
盤状インゴット（以下、ＰＡＩｒ円盤状インゴットとい
う）の不純物濃度および純度を測定し、その結果を表３
に示した。Conventional Example 1 The Ir raw material prepared in Example 1 was plasma arc melted in an Ar atmosphere and solidified in a water-cooled hearth to have a diameter of 150.
mm, thickness: An Ir disk-shaped ingot having a size of 20 mm was prepared, and the impurity concentration and the purity of the Ir disk-shaped ingot (hereinafter referred to as PAIr disk-shaped ingot) obtained by melting this plasma arc were measured. The results are shown in Table 3.
It was shown to.
【００２０】[0020]
【表３】 [Table 3]
【００２１】このＰＡＩｒ円盤状インゴットを温度：１
２５０℃に加熱し、大気中で熱間圧延し、直径：３００
mm、厚さ：５mmの寸法の溶解Ｉｒターゲットを作製し、
その表面を観察したが、圧延時の割れは全く見られなか
った。The PAIr disc-shaped ingot was heated at a temperature of 1
Heated to 250 ℃, hot rolled in air, diameter: 300
mm, thickness: A molten Ir target having a size of 5 mm was prepared,
The surface was observed, but no cracks were observed during rolling.
【００２２】上記実施例１および従来例１に示される結
果から、ＰＡＩｒ円盤状インゴットの純度はＩｒ原料と
ほぼ同じであるが、ＥＢＩｒ円盤状インゴットはＩｒ原
料に比べて不純物濃度が極めて少なく高純度化し、ＥＢ
Ｉｒ円盤状インゴットを缶に封入して熱間圧延すること
により従来のような圧延中の割れも全く見られなくなる
ことが分る。From the results shown in the above-mentioned Example 1 and Conventional Example 1, the purity of the PAIr disc-shaped ingot is almost the same as that of the Ir raw material, but the EBIr disc-shaped ingot has an extremely small impurity concentration and a high purity as compared with the Ir raw material. EB
It can be seen that when the Ir disk-shaped ingot is enclosed in a can and hot-rolled, cracks during rolling as in the conventional case are not seen at all.
【００２３】実施例２ 市販のＲｕ原料を用意し、このＲｕ原料の不純物濃度お
よび純度を測定し、それらの測定結果を表４に示した。Example 2 A commercially available Ru raw material was prepared, the impurity concentration and the purity of this Ru raw material were measured, and the measurement results are shown in Table 4.
【００２４】[0024]
【表４】 [Table 4]
【００２５】表４に示される純度のＲｕ原料を実施例１
と同じ条件の電子ビーム溶解し、水冷ハース内で凝固さ
せて、直径：１５０mm、厚さ：２０mmの寸法を有するＲ
ｕ円盤状インゴット（以下、ＥＢＲｕ円盤状インゴット
という）を作製し、このＥＢＲｕ円盤状インゴットの不
純物濃度および純度を測定し、その結果を表５に示し
た。The Ru raw material having the purity shown in Table 4 was used in Example 1.
Electron beam melted under the same conditions as above, solidified in a water-cooled hearth, and has a diameter of 150 mm and a thickness of 20 mm.
A u-disc-shaped ingot (hereinafter referred to as an EBRu disc-shaped ingot) was prepared, and the impurity concentration and purity of this EBRu disc-shaped ingot were measured. The results are shown in Table 5.
【００２６】[0026]
【表５】 [Table 5]
【００２７】このＥＢＲｕ円盤状インゴットを実施例１
と同じ缶に封入し、温度１３００℃の熱間圧延により直
径：３００mm、厚さ：５mmの寸法を有する溶解Ｒｕター
ゲットを作製したが圧延時の割れは全く見られなかっ
た。This EBRu disc-shaped ingot is used in Example 1.
A molten Ru target having a diameter of 300 mm and a thickness of 5 mm was prepared by enclosing it in the same can and hot-rolling it at a temperature of 1300 ° C., but no cracks were observed during rolling.
【００２８】従来例２ 一方、実施例２で用意したＲｕ原料をＡｒ雰囲気中のプ
ラズマアーク溶解し、水冷ハース内で凝固させて直径：
１５０mm、厚さ：２０mmの寸法を有するＲｕ円盤状イン
ゴットを作製し、このプラズマアーク溶解して得られた
Ｒｕ円盤状インゴット（以下、ＰＡＲｕ円盤状インゴッ
トという）の不純物濃度および純度を測定し、その結果
を表６に示した。Conventional Example 2 On the other hand, the Ru raw material prepared in Example 2 was plasma-arc melted in an Ar atmosphere and solidified in a water-cooled hearth to have a diameter:
A Ru disc-shaped ingot having a size of 150 mm and a thickness of 20 mm was prepared, and the impurity concentration and the purity of the Ru disc-shaped ingot (hereinafter, referred to as PARu disc-shaped ingot) obtained by plasma arc melting were measured, and the Ru disc-shaped ingot was measured. The results are shown in Table 6.
【００２９】[0029]
【表６】 [Table 6]
【００３０】このＰＡＲｕ円盤状インゴットを大気中温
度：１２５０℃の熱間圧延により直径：３００mm、厚
さ：５mmの寸法を有する溶解Ｒｕターゲットを作製し、
その表面を観察したが、圧延時の割れは全く見られなか
った。This PARu disc-shaped ingot was hot-rolled at an atmospheric temperature of 1250 ° C. to produce a molten Ru target having a diameter of 300 mm and a thickness of 5 mm.
The surface was observed, but no cracks were observed during rolling.
【００３１】上記実施例２および従来例２に示される結
果から、ＰＡＲｕ円盤状インゴットの純度はＲｕ原料と
ほぼ同じであるが、ＥＢＲｕ円盤状インゴットの純度は
Ｒｕ原料に比べて高純度化し、またＥＢＲｕ円盤状イン
ゴットを缶に封入して熱間圧延することにより従来のよ
うな圧延中の割れは発生しないことが分る。From the results shown in the above Example 2 and Conventional Example 2, the purity of the PARu disc-shaped ingot is almost the same as that of the Ru raw material, but the purity of the EBRu disc-shaped ingot is higher than that of the Ru raw material, and It can be seen that, by enclosing the EBRu disc-shaped ingot in a can and performing hot rolling, cracking during rolling unlike the conventional case does not occur.
【００３２】[0032]
【発明の効果】この発明によると、公知の電子ビーム溶
解法を使用することにより、従来よりも高純度の溶解Ｉ
ｒターゲットまたは溶解Ｒｕターゲットを製造すること
ができ、半導体産業の発展に大いに貢献しうるものであ
る。According to the present invention, by using the known electron beam melting method, the melting I having a higher purity than ever can be obtained.
An r target or a molten Ru target can be manufactured, which can greatly contribute to the development of the semiconductor industry.
Claims (2)
Ｉｒインゴットを金属容器に入れて熱間圧延することを
特徴とする高純度Ｉｒスパッタリングターゲットの製造
方法。1. A method for producing a high-purity Ir sputtering target, which comprises melting an Ir raw material with an electron beam, placing the obtained Ir ingot in a metal container, and hot rolling.
Ｒｕインゴットを金属容器に入れて熱間圧延することを
特徴とする高純度Ｒｕスパッタリングターゲットの製造
方法。2. A method for producing a high-purity Ru sputtering target, which comprises subjecting a Ru raw material to electron beam melting, placing the obtained Ru ingot in a metal container, and hot rolling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21422095A JPH0941131A (en) | 1995-07-31 | 1995-07-31 | Production of high purity iridium or ruthenium sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21422095A JPH0941131A (en) | 1995-07-31 | 1995-07-31 | Production of high purity iridium or ruthenium sputtering target |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0941131A true JPH0941131A (en) | 1997-02-10 |
Family
ID=16652205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21422095A Pending JPH0941131A (en) | 1995-07-31 | 1995-07-31 | Production of high purity iridium or ruthenium sputtering target |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0941131A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999066099A1 (en) * | 1998-06-17 | 1999-12-23 | Tanaka Kikinzoku Kogyo K.K. | Target material for spattering |
| WO1999066098A1 (en) * | 1998-06-16 | 1999-12-23 | Tanaka Kikinzoku Kogyo K.K | Method for preparation of target material for spattering |
| WO2000004202A1 (en) * | 1998-07-14 | 2000-01-27 | Japan Energy Corporation | Method for preparing high purity ruthenium sputtering target and high purity ruthenium sputtering target |
| US6036741A (en) * | 1997-07-31 | 2000-03-14 | Japan Energy Corporation | Process for producing high-purity ruthenium |
| JP2002105631A (en) * | 2000-09-28 | 2002-04-10 | Sumitomo Metal Mining Co Ltd | High-purity ruthenium sputtering target and manufacturing method |
| JP2002322559A (en) * | 2001-04-23 | 2002-11-08 | Sumitomo Metal Mining Co Ltd | High purity iridium sputtering target and production method therefor |
| US6875324B2 (en) | 1998-06-17 | 2005-04-05 | Tanaka Kikinzoku Kogyo K.K. | Sputtering target material |
| WO2007043215A1 (en) * | 2005-10-14 | 2007-04-19 | Nippon Mining & Metals Co., Ltd. | HIGH-PURITY Ru ALLOY TARGET, PROCESS FOR PRODUCING THE SAME AND SPUTTERED FILM |
| KR100856758B1 (en) * | 2006-11-30 | 2008-09-05 | 희성금속 주식회사 | Manufacturing method of the iridium and ruthenium sputtering target having a fine grain size |
-
1995
- 1995-07-31 JP JP21422095A patent/JPH0941131A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6036741A (en) * | 1997-07-31 | 2000-03-14 | Japan Energy Corporation | Process for producing high-purity ruthenium |
| US6309529B1 (en) | 1998-06-16 | 2001-10-30 | Tanaka Kikinozoku Kogyo K.K. | Method for producing sputtering target material |
| WO1999066098A1 (en) * | 1998-06-16 | 1999-12-23 | Tanaka Kikinzoku Kogyo K.K | Method for preparation of target material for spattering |
| GB2343683B (en) * | 1998-06-16 | 2003-04-23 | Tanaka Precious Metal Ind | Method for producing sputtering target material |
| GB2343683A (en) * | 1998-06-16 | 2000-05-17 | Tanaka Precious Metal Ind | Method for preparation of target material for spattering |
| DE19981314C2 (en) * | 1998-06-17 | 2003-07-03 | Tanaka Precious Metal Ind | sputter target |
| GB2343684A (en) * | 1998-06-17 | 2000-05-17 | Tanaka Precious Metal Ind | Target material for spattering |
| GB2343684B (en) * | 1998-06-17 | 2003-04-23 | Tanaka Precious Metal Ind | Sputtering target material |
| WO1999066099A1 (en) * | 1998-06-17 | 1999-12-23 | Tanaka Kikinzoku Kogyo K.K. | Target material for spattering |
| US6875324B2 (en) | 1998-06-17 | 2005-04-05 | Tanaka Kikinzoku Kogyo K.K. | Sputtering target material |
| US6284013B1 (en) | 1998-07-14 | 2001-09-04 | Japan Energy Corporation | Method for preparing high-purity ruthenium sputtering target and high-purity ruthenium sputtering target |
| WO2000004202A1 (en) * | 1998-07-14 | 2000-01-27 | Japan Energy Corporation | Method for preparing high purity ruthenium sputtering target and high purity ruthenium sputtering target |
| JP2002105631A (en) * | 2000-09-28 | 2002-04-10 | Sumitomo Metal Mining Co Ltd | High-purity ruthenium sputtering target and manufacturing method |
| JP2002322559A (en) * | 2001-04-23 | 2002-11-08 | Sumitomo Metal Mining Co Ltd | High purity iridium sputtering target and production method therefor |
| WO2007043215A1 (en) * | 2005-10-14 | 2007-04-19 | Nippon Mining & Metals Co., Ltd. | HIGH-PURITY Ru ALLOY TARGET, PROCESS FOR PRODUCING THE SAME AND SPUTTERED FILM |
| JP4800317B2 (en) * | 2005-10-14 | 2011-10-26 | Ｊｘ日鉱日石金属株式会社 | High purity Ru alloy target, method for producing the same, and sputtered film |
| KR100856758B1 (en) * | 2006-11-30 | 2008-09-05 | 희성금속 주식회사 | Manufacturing method of the iridium and ruthenium sputtering target having a fine grain size |
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