JPH0936338A - Solid-state image sensing device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To simplify manufacturing process and effectively reduce manhour, by making it possible to cope with the correction for various optical systems by using one mask for correction, when the sensitivity shading of a solid-state image sensing device is corrected. SOLUTION: In an image sensing region 3 of a solid-state image sensing device, many photodetection parts are separately formed on a silicon substrate 1, and condenser microlenses 9 corresponding to the respective photodetection parts are formed on the image sensing region 3. The condensor microlenses 9 are arranged at the positions where a light L entering the image sensing regions 3 is converged in the corresponding photodetection parts by the respective condenser microlenses 9. In this case, the convergence magnification of an exposure light is adjusted on the basis of specific parameters, in the expoure process to a film for mask formation for forming the condenser microlenses 9, and the forming positions of the condenser microlenses 9 which are formed on the basis of a resist pattern of the film for mask formation are so corrected that the entering light L through the condenser microlenses 9 are converged in the photodetection parts.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device suitable for improving sensitivity characteristics of the solid-state image pickup device and a method for manufacturing the same.

[0002]

2. Description of the Related Art A signal charge accumulated in a light receiving portion composed of a solid-state image pickup device, for example, a pn photodiode
C which transfers to the output side by the charge transfer unit composed of CD
In the CD solid-state imaging device, when the relationship between the signal charge and noise in the CCD and the image plane illuminance is observed, the influence of noise (shot noise) due to fluctuations of the signal charge and dark noise may increase on the low illuminance side. Are known.

In order to reduce the shot noise, it is sufficient to increase the aperture ratio of the light receiving portion, but there is a limit to the increase of the aperture ratio due to the recent trend of miniaturization. Therefore, at present, a structure in which a micro condenser lens is formed on the light receiving portion has been proposed and put into practical use.

In the case of the structure in which the micro condensing lens is formed, the utilization factor of light is increased, the sensitivity in the light receiving portion can be improved, and it is effective in reducing the shot noise (note that the micro condensing lens is used). Regarding the method of forming the lens, for example, JP-A-60-53073 and JP-A-1
-10666 gazette).

In a conventional CCD solid-state image sensor, as shown in FIG. 11, a transfer electrode 103 made of a polycrystalline silicon layer is selectively formed on a silicon substrate 101 via a gate insulating film 102 made of SiO ₂ or the like. The Al light-shielding film 105 is formed on these transfer electrodes 103 via the interlayer insulating film 104.
Are selectively formed, an interlayer film 106 for flattening is further laminated on the entire surface including the Al light shielding film 105, and a micro condenser lens 107 is formed on the interlayer film 106.

Here, a portion where the transfer electrode 103 is not formed is a light receiving portion 108, and the Al light shielding film 105 is removed on the light receiving portion 108, and further, the micro light corresponding to each light receiving portion 108 is formed. Condenser lens 10
7 is formed.

In this case, as shown in FIG. 12, each micro condenser lens 107 is formed at a position where the center of the light receiving portion 108 and the center (optical axis) of the micro condenser lens 107 are substantially coincident with each other. There is. In FIG. 12, the transfer electrode 103 and the Al light shielding film 105 shown in FIG.
A laminated film such as the above is described as the transfer electrode portion 109.

However, especially in the peripheral portion of the image pickup area,
Since the condensing position of the micro condensing lens 9 with respect to the light L incident from the subject through the diaphragm 110 and the position of the light receiving unit 108 are different from each other, the incident light L is incident on the light receiving unit 10.
The so-called "shading" (for example, indicated by reference numeral 111) in which a part of the light is shielded by the Al light-shielding film 105 formed in the periphery of 8 causes a decrease in sensitivity in the periphery of the imaging region.

Therefore, conventionally, the converging position of each micro condensing lens 107 is measured, and the optimum forming position of each micro condensing lens 107 is calculated (sensitivity shading correction). Based on this, a mask for forming position correction is prepared, and the micro-focusing lens 107 is formed on the image pickup area using this correction mask.

[0010]

By the way, the above-mentioned CCD
Sensitivity shading correction in the solid-state image sensor employs a method in which the micro condenser lens 107 is subjected to minute scaling with the effective pixel center as the center.

Conventionally, as a method of applying the micro-scaling, a method of exposing the micro-lens pattern using a correction mask in which the micro-scaling is applied to the entire area of the pixel pattern by a calculation process using a computer has been used.

However, with this method, the correction amount is always constant, and it is not possible to deal with the change in the exit pupil distance, that is, the change in the correction amount due to the difference in the optical system. In order to make it correspond, a plurality of correction masks are required, but since it is very difficult to make this correction mask, a method that can cope with one mask has been desired.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a solid-state image pickup device capable of improving the sensitivity over the entire image pickup region.

Another object of the present invention is to perform correction for sensitivity shading of a solid-state image pickup device by using a single correction mask for correction of various optical systems, simplifying the manufacturing process and reducing man-hours. It is an object of the present invention to provide a method for manufacturing a solid-state imaging device, which can effectively reduce the amount of the solid-state imaging device.

[0015]

According to the present invention, a condenser lens is formed corresponding to each of the above-mentioned light receiving portions on an image pickup area formed by separating a large number of light receiving portions on a semiconductor substrate. In the solid-state image pickup device, the condenser lenses are arranged and arranged at positions where the light incident on the image pickup area is condensed by the corresponding light receiving portions of the condenser lenses.

As a result, first, when the incident light from the subject enters the light receiving portion, signal charges corresponding to the amount of the incident light are accumulated in the light receiving portion, and when viewed from the entire imaging area, the image of the subject is obtained. The signal charge corresponding to is stored in each light receiving portion.

In this case, usually, in the peripheral part of the image pickup area, the condensing position of the condensing lens and the position of the light receiving part are different from each other, so that the incident light is shielded by the light shielding film formed around the light receiving part. The so-called “vignetting” occurs, and the sensitivity in the periphery of the imaging area is reduced.

However, in the present invention, the condenser lenses are arrayed at the positions where the light incident on the image pickup area is condensed by the respective condenser lenses to the corresponding light receiving portions. As a result, the position where the incident light is condensed through the condenser lens and the position of the light receiving unit are substantially the same in the entire image pickup area, and the sensitivity of the solid-state image pickup element is improved.

Further, in the method of manufacturing a solid-state image pickup device according to the present invention, a step of forming a material film for forming a condenser lens on a semiconductor substrate on which a light receiving portion is formed via a flattening film, and the condenser lens. A step of forming a mask forming film on the forming material film, and exposing and developing the mask forming film,
And a step of forming a resist pattern by the mask forming film, and a step of etching away the condensing lens forming material film exposed through the resist pattern to form a condensing lens. During the exposure / development process, the condensing magnification of the exposure light is adjusted based on a predetermined parameter, and the formation position of the condensing lens formed on the basis of the resist pattern formed by the mask forming film is passed through the condensing lens. Correction is performed so that the incident light is focused on the light receiving portion.

That is, first, a condensing lens forming material film is formed on a semiconductor substrate having a light receiving portion formed thereon through a flattening film, and then a mask forming film is formed on the condensing lens forming material film. Then, the mask forming film is exposed to light.
After development is performed to form a resist pattern by the mask forming film, the condensing lens forming material film exposed through the resist pattern is removed by etching to form a condensing lens. In this case, during the exposure / development process for the mask forming film, the condensing magnification of the exposure light is adjusted based on a predetermined parameter to form a condensing lens formed based on the resist pattern formed by the mask forming film. The position is corrected so that the incident light passing through the condenser lens is condensed on the light receiving portion.

Usually, especially in the peripheral portion of the imaging area,
Since the condensing position of the condensing lens and the position of the light receiving unit are different from each other, a so-called “vignetting” occurs in which the incident light is blocked by the light shielding film formed around the light receiving unit. The sensitivity will decrease.
Therefore, conventionally, sensitivity shading correction is performed to suppress the deterioration of the sensitivity, but a plurality of correction masks are required depending on the type of optical system.

According to the present invention, the optical path of exposure through the correction mask changes in a direction of expanding or narrowing by adjusting the condensing magnification of the exposure light, and the light collecting position of the light passing through the correction mask changes appropriately. Will be done.

Therefore, while the comparison between the position where the light from the subject is condensed in the image pickup area through the condenser lens and the position of the light receiving portion is measured by, for example, a simulation, the condensing magnification of the exposure light is adjusted to obtain the optimum value. It is possible to make the position, that is, the position where the light from the subject is condensed in the imaging region through the condensing lens and the position of the light receiving unit, in the entire imaging region.

In this case, shading correction for various optical systems can be performed with one mask, and the manufacturing process can be simplified and the number of steps can be effectively reduced.

[0025]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a CCD solid-state image pickup device according to the present invention (hereinafter referred to as CCD solid-state image pickup device according to embodiments) will be described below with reference to FIGS.

As shown in FIG. 1, the CCD solid-state image pickup device according to this embodiment has a pn array on the surface of a silicon substrate 1.
It has an imaging region 3 (see FIGS. 2 and 3) formed by arranging a large number of light receiving portions 2 formed of photodiodes in a matrix. Further, on the silicon substrate 1, SiO
_A transfer electrode 5 made of a polycrystalline silicon layer is selectively formed via a gate insulating film 4 made of ₂ or the like. The transfer electrode 5 is formed so as to avoid the light receiving section 2.

An Al light-shielding film 7 is selectively formed on these transfer electrodes 5 with an interlayer insulating film 6 interposed therebetween.
The flattening interlayer film 8 is laminated on the entire surface including the above, and the micro condenser lens 9 is further formed on the interlayer film 8 to form the CCD solid-state imaging device according to the present embodiment. In FIG. 1, impurity diffusion regions other than the light receiving portion, such as vertical registers and channel stopper regions, are omitted.

In the CCD solid-state image pickup device according to the present embodiment, as shown in FIG. 2, the position where each micro condenser lens 9 is formed is the diaphragm 1 which is incident on the image pickup region 3.
The light L from the subject passing through 0 is focused on the corresponding light receiving portion 2 by each micro focusing lens 9. In FIG. 2, the laminated film including the transfer electrode 5 and the Al light shielding film 7 shown in FIG. 1 is described as the transfer electrode portion 11.

Next, an example of a method of manufacturing the CCD solid-state image pickup device according to this embodiment will be described with reference to FIGS.

First, as shown in FIG. 4A, after forming a gate insulating film 4 made of SiO ₂ on a silicon substrate 1,
A transfer electrode 5 made of a polycrystalline silicon layer is selectively formed on the gate insulating film 4 by, for example, a CVD method, and p-type impurities and a p-type impurity are formed on the surface of the silicon substrate 1 where the transfer electrode 5 is not formed. The light receiving portion 2 including a pn photodiode is selectively formed by ion implantation of n-type impurities.

After that, an interlayer insulating film 6 is formed on the entire surface, and then an Al light-shielding film 7 is selectively formed on a portion of the interlayer insulating film 6 corresponding to the transfer electrode 5. After that, an interlayer film 8 for flattening is formed on the entire surface, and then a lens material film 12 for forming a micro condenser lens 9 on the entire surface of the interlayer film 8.
Are stacked by, for example, a CVD method, and then, for example, a SiO ₂ film 13 used as a mask for etching is formed by, for example, C
Laminate by the VD method.

Next, as shown in FIG. 4B, after forming a photoresist film 14 on the entire surface, the photoresist film 14 is formed.
In contrast, exposure is performed while performing sensitivity shading correction described later. At this time, a pattern latent image 14a for forming a micro condenser lens is formed on the photoresist film 14 at a position corresponding to the position where the micro condenser lens 9 is formed.

After that, as shown in FIG. 5A, the photoresist film 14 is subjected to a development treatment to form a resist pattern RP1 of the micro condenser lens 9 by the photoresist film 14 on the SiO ₂ film 13. That is, since the latent image portion 14a due to exposure is hardened, the portions other than the latent image portion 14a are dissolved in the subsequent developing process, and as a result, the resist pattern MP formed by the photoresist film 14 is formed only on the lens forming portion. Will remain.

Next, as shown in FIG. 5B, the lower layer SiO ₂ film 13 exposed through the resist pattern RP is removed by, for example, RIE (reactive ion etching), and the lens with the SiO ₂ film 13 is formed on the lens forming portion. A resist pattern RP2 for formation is formed.

After that, as shown in FIG. 6A, after removing the resist pattern RP1 by the photoresist film 14, the lower lens material film 12 exposed through the resist pattern RP2 by the SiO ₂ film 13 is removed by etching. At this time, the resist pattern RP2 is formed by combining anisotropic etching and isotropic etching.
The lens material film 12 immediately below is processed into a convex lens shape in which the cross-sectional shape is tapered, and the micro focusing lens 9 is formed by the lens material film 12.

Then, as shown in FIG. 1, the resist pattern RP2 formed by the SiO ₂ film 13 remaining in the upper layer is removed by using, for example, a hydrofluoric acid solution to obtain the CCD solid-state image pickup device according to the present embodiment.

Next, another example of the method of manufacturing the CCD solid-state image pickup device according to the present embodiment will be described with reference to FIGS. The same reference numerals are given to those corresponding to those in FIGS. 4 to 6.

First, as shown in FIG. 7A, after forming the gate insulating film 4 made of SiO ₂ on the silicon substrate 1,
A transfer electrode 5 made of a polycrystalline silicon layer is selectively formed on the gate insulating film 4 by, for example, a CVD method, and p-type impurities and a p-type impurity are formed on the surface of the silicon substrate 1 where the transfer electrode 5 is not formed. The light receiving portion 2 including a pn photodiode is selectively formed by ion implantation of n-type impurities.

After that, an interlayer insulating film 6 is formed on the entire surface, and then an Al light-shielding film 7 is selectively formed on a portion of the interlayer insulating film 6 corresponding to the transfer electrode 5. After that, an interlayer film 8 for flattening is formed on the entire surface, and then a dyeing film 21 (color filter) is formed on the interlayer film 8. In addition, C for black and white
In the case of a CD solid-state image sensor, the formation of this dyeing film 21 is omitted.

Thereafter, a lens material film (organic material film) 12 for forming the micro condenser lens 9 is laminated on the entire surface of the dyeing film 21 by, for example, the CVD method.

Next, as shown in FIG. 7B, after forming a photoresist film 14 on the entire surface, the photoresist film 14 is formed.
On the other hand, exposure through the mask 22 is performed while performing sensitivity shading correction described later. At this time, a portion of the photoresist film 14 irradiated with the exposure light L through the mask 22 is melted, and as a result, the portion of the photoresist film 14 corresponding to the position where the micro condenser lens 9 is formed is melted. Pattern latent image 1 for forming a micro condenser lens
4a will be formed.

Next, as shown in FIG. 8A, a developing process is performed to remove the exposed portion (melted portion) of the photoresist film 14 exposed to the exposure light, and a resist pattern RP1 for forming a micro condenser lens is formed. Form.

Next, as shown in FIG. 8B, heat treatment is performed to reflow the resist pattern RP1. At this time, the corners of the resist pattern RP1 are softened by heat and are formed into a convex lens shape as a whole.

Next, as shown in FIG. 9, RIE is performed on the entire surface.
Anisotropic etching such as (reactive ion etching) is performed. At this time, the convex lens shape of the resist pattern RP1 is transferred to the lens material film 12 in the lower layer, and the convex lens, that is, the micro condenser lens 9 is formed by the lens material film 12. As a result, the CCD solid-state image sensor according to this embodiment is obtained.

Next, the sensitivity shading correction performed at the time of exposure will be described. In the normal sensitivity shading correction method, since a position-corrected pattern is formed on the window opening mask itself for forming the micro condenser lens 9, a certain CCD solid-state image sensor has various exit pupil distances. When used in an optical system, a corresponding number of position-corrected masks are required.

Therefore, the sensitivity shading correction according to the present embodiment is newly devised to perform the correction corresponding to the change in the exit pupil distance due to the difference in the optical system, and the exit pupil distance is shortened. This is an improvement of the method of correcting the so-called sensitivity shading, which is the occurrence of "vignetting" near the periphery of the imaging area caused by the above.

That is, in the process of forming the micro-condensing lens 9 of the CCD solid-state image pickup device consisting of one chip per exposure area, the stepper magnification correction is used during the exposure, and light is received on all the light receiving portions 2 in the image pickup area 3. It is characterized by optimizing the position of the micro condenser lens 9 so that the light is condensed.

In the method using the stepper magnification correction, since the position correction is performed by changing the magnification of the pattern exposed on the CCD solid-state image pickup device (chip) when the window is opened, the stepper is used for various exit pupil distances. This can be dealt with by changing the magnification correction amount. Therefore, it is possible to realize the formation of the micro condensing lens 9 for CCD solid-state image pickup devices having different exit pupil distances with one mask.

Here, as shown in FIG. 10, the magnification correction mechanism of the stepper is one of the projection lens groups 31 composed of a large number of lenses, such as a zoom lens of a video camera or an optical camera. Focusing lens 3
By making 2 movable, the mechanism is such that the magnification is changed. Note that some steppers employ a method of changing the optical refractive index to change the magnification by changing the pressure in the front and rear spaces in the focusing lens 32.

The data for correcting the magnification by the stepper (that is, the correction of the position where the micro condenser lens 9 is formed) can be obtained by a simulation performed at the time of designing the CCD solid-state image pickup device and at the time of trial manufacture. The data for the magnification correction is mainly obtained as follows.

Design parameters of each CCD solid-state image pickup device (for example, distance from the formation position of the micro condenser lens 9 to the formation position of the light receiving portion 2, radius of curvature of the micro condenser lens 9, chip size, etc.) and use Based on the parameters of the optical system (for example, the exit pupil distance) to be performed, the condensed state and the optical path on the light receiving unit 2 are calculated.

The optimum magnification correction amount is found by changing the formation position of the micro condenser lens 9 and the exit pupil distance. By repeating this for the required number of times, the magnification correction amount for a certain number of exit pupil distances can be obtained.

In other words, the optical path of exposure through the correction mask changes to a direction in which it expands or narrows depending on the adjustment of the focusing ratio of the exposure light emitted from the stepper,
The light condensing position through the correction mask will be changed appropriately. Therefore, while adjusting the condensing magnification of the exposure light while measuring the comparison between the position where the light L from the subject is condensed on the imaging region 3 through the micro condensing lens 9 and the position of the light receiving unit 2 by, for example, a simulation, Know the best position. This makes it possible to set the position where the light L from the subject is focused on the imaging region 3 through the micro condenser lens and the position of the light receiving unit 2 in the entire imaging region 3.

The various parameters to be inputted may be, for example, design values or data obtained from the cross section of the prototype, but it is more realistic and accurate to use the data obtained from the prototype. Various simulations are possible.

Then, the magnification correction value obtained by the simulation is selected according to the exit pupil distance of the optical system used for the CCD solid-state image pickup device, and the selected magnification correction value is input to the stepper during the exposure. To do. The stepper moves, for example, the focusing lens 32 shown in FIG. 10 so as to match the input magnification correction value,
Change the magnification of the exposure light. Thereby, when the micro condenser lens 9 is formed at the optimum position of the photoresist film 14, the light L from the subject passes through the micro condenser lens 9 in the entire image pickup area 3.
The pattern latent image 14a (see FIG. 4B) is formed at the position where the position where the light is focused on the position of the light receiving unit 2 and the position of the light receiving unit 2 match.

Therefore, in the subsequent process, the interlayer film 8
When the micro condenser lens 9 is formed on the upper side, the imaging area 3
The light condensing lenses 9 that are incident on the subject are arrayed at the positions where the light condensing lenses 2 condense on the corresponding light receiving portions 2.

Here, in FIG. 3, the formation positions of micro-condensing lenses 9 formed by ordinary exposure (hereinafter simply referred to as normal forming positions a) and the exposure by the magnification correction according to the present embodiment are formed. The relationship with the formation position of the micro condenser lens 9 (hereinafter, simply referred to as magnification correction formation position b) is shown. When magnification correction is applied at the time of exposure by the stepper with the center of the effective image pickup area in the image pickup area 3 as the exposure center, the micro-condensing lens 9 is formed at a position indicated by the magnification correction formation position b with respect to the normal formation position a It will be. In this case, since the magnification at the time of exposure can be freely changed, it is possible to form the micro-focusing lens 9 with the optimum shading correction. It should be noted that the magnification correction may apply a reverse magnification depending on the optical system used.

As described above, the CCD according to the above embodiment
In the solid-state imaging device, since the stepping magnification correction function is used to form the micro-condensing lens 9 that is subjected to minute scaling for sensitivity shading correction, the magnification correction amount can be arbitrarily determined. It is possible to perform shading correction for optical systems having various exit pupil distances with one correction mask.

Further, since the optimum sensitivity shading correction can be freely performed according to the exit pupil distance, the optimum shading correction amount can be easily maintained by feeding back the correction result.

[0060]

As described above, according to the solid-state image pickup device of the present invention, a plurality of light receiving portions are separately formed on a semiconductor substrate, and the corresponding light receiving portions are formed on the image pickup area. In a solid-state image sensor having a condensing lens formed therein, the condensing lenses are arrayed at positions where the light incident on the imaging area is condensed on the corresponding light receiving portions of the condensing lenses. Since this is done, it is possible to improve the sensitivity over the entire imaging region.

Further, according to the method of manufacturing a solid-state image sensor according to the present invention, the condensing magnification of the incident light is adjusted based on a predetermined parameter during the exposure process for the condensing lens forming material film, The position of the latent image formed on the material film,
When the latent image is used as a condensing lens, the incident light passing through the condensing lens is corrected so as to be condensed on the light receiving portion. Therefore, when performing the sensitivity shading correction of the solid-state imaging device, various corrections are made. The correction for the optical system can be performed with one correction mask, and the manufacturing process can be simplified and the number of steps can be effectively reduced.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a main part of an embodiment of a CCD solid-state imaging device according to the present invention, particularly a light receiving part and its peripheral part.

FIG. 2 is a schematic cross-sectional view showing a formation position of a micro focusing lens of the CCD solid-state imaging device according to the present embodiment.

FIG. 3 is a view showing a forming position (normal forming position a) of a micro condensing lens 9 formed by normal exposure and a forming position (magnification of a micro condensing lens 9 formed by exposure by magnification correction according to the present embodiment. It is a top view which shows the relationship with correction formation position b).

FIG. 4 is a process diagram (1) showing an example of a method of manufacturing the CCD solid-state imaging device according to the present embodiment.

FIG. 5 is a process diagram (2) showing the example of the method for manufacturing the CCD solid-state imaging device according to the present embodiment.

FIG. 6 is a process diagram (3) showing the example of the method of manufacturing the CCD solid-state imaging device according to the present embodiment.

FIG. 7 is a process chart (No. 1) showing another example of the method for manufacturing the CCD solid-state imaging device according to the present embodiment.

FIG. 8 is a process diagram (No. 2) showing another example of the method for manufacturing the CCD solid-state imaging device according to the present embodiment.

FIG. 9 is a process drawing (3) showing another example of the method for manufacturing the CCD solid-state imaging device according to the present embodiment.

FIG. 10 is a configuration diagram showing an example of a magnification correction mechanism of a stepper.

FIG. 11 is a sectional view showing a main part of an embodiment of a CCD solid-state imaging device according to a conventional example, particularly a light receiving part and its peripheral part.

FIG. 12 is a schematic cross-sectional view showing a formation position of a micro focusing lens of a CCD solid-state imaging device according to a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Silicon substrate 2 Light receiving part 3 Imaging area 4 Gate insulating film 5 Transfer electrode 6 Interlayer insulating film 7 Al light shielding film 8 Interlayer film for planarization 9 Micro focusing lens 22 Mask

Claims (3)

[Claims] 1. A solid-state imaging device comprising a semiconductor substrate and a plurality of light-receiving portions formed separately from each other on an imaging region, and condensing lenses are formed corresponding to the respective light-receiving portions. A solid-state image pickup device, wherein each of the condenser lenses is arranged in an array at a position where the light incident on the condenser lens is condensed by the corresponding condenser lens to a corresponding light receiving portion. 2. A step of forming a condensing lens forming material film on a semiconductor substrate having a light receiving portion formed thereon through a planarizing film, and a mask forming film formed on the condensing lens forming material film. And a step of exposing and developing the mask forming film to form a resist pattern by the mask forming film, and etching away the condensing lens forming material film exposed through the resist pattern. A step of forming a condenser lens, and adjusting the condensing magnification of the exposure light based on a predetermined parameter during the exposure / development step for the mask forming film, and based on the resist pattern formed by the mask forming film. A method for manufacturing a solid-state imaging device, comprising: correcting the formation position of the condensing lens formed as described above so that the incident light passing through the condensing lens is condensed on the light receiving portion. 3. The solid-state image sensor according to claim 2, wherein the predetermined parameter is at least the distance from the condenser lens to the light receiving portion, the radius of curvature of the condenser lens, the chip size, and the exit pupil distance. Manufacturing method.