JPH0933344A - Quantity-of-light measuring device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a quantity-of-light measuring device in which exposure distribution can be measured in a scanning exposing device. SOLUTION: A controller 18 scans a wafer stage 15 and emits a light from a pulse light source 1 to expose an illuminance meter 17 having a plurality of light emitting elements arranged in a row in the scanning direction. The output value of each light receiving element of the illuminance meter 17 is integrated for every pulse during the exposure, the correction coefficient of sensitivity dispersion of each light receiving element stored in a memory 19 is read after the end of the exposure, and the measurement value of the corresponding light receiving element is subtracted to remove the influence on the measurement Value by the sensitivity dispersion between each light Receiving element. Thus, the measurement value of every light receiving element arranged in a row in the scanning direction can be provided as the exposure distribution in the scanning direction of the exposed area.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light amount measuring device, and more particularly, to giving an appropriate light exposure amount to a wafer by measuring the light amount distribution in an exposure area of one shot using this light amount measuring device. The present invention relates to a scanning type exposure apparatus capable of performing the above.

[0002]

2. Description of the Related Art When a semiconductor device is manufactured using a photolithography technique, a projection exposure apparatus is used which exposes a reticle pattern onto a wafer coated with a photoresist through a projection optical system. In recent years, a chip pattern per semiconductor device tends to be larger and finer, and therefore a projection exposure apparatus having a large exposure area and high resolution is required.

In response to the demand for a larger exposure area,
A scanning type exposure apparatus has been developed in which a reticle and a wafer are synchronously scanned with respect to a slit-shaped illumination area to expose and transfer a reticle pattern larger than the illumination area onto the wafer.

On the other hand, the realization of high resolution is made by shortening the wavelength of the light source, and excimer laser is about to be used instead of the mercury lamp which is the conventional light source. The excimer laser has a high output in the far-ultraviolet region, but is different from the conventional light source in that it is a pulsed laser.

[0005]

In a scanning type exposure apparatus using a pulse laser such as an excimer laser as a light source,
The exposure amount distribution in the scanning direction of the exposure area changes due to various factors such as output fluctuation of the light source, deviation of light emission timing, and positional deviation of the stage. Therefore, in the scanning type exposure apparatus, it is an important subject to measure the exposure amount distribution in the scanning direction and control the exposure amount given to the wafer from the measurement result to suppress the exposure unevenness in the exposure region.

To measure the exposure dose with a scanning type exposure apparatus,
A method using an illuminance meter mounted on a conventional stepper or the like can be considered. The illuminance meter is a light intensity detector having a minute aperture in the light receiving portion, and is installed on the wafer stage so that the height of the light receiving portion and the height of the wafer surface match.

By exposing the illuminometer once to perform exposure, the exposure amount in one minute area can be measured.
Next, the illuminance meter is moved to another position in the scanning direction, scanning exposure is performed again, and the exposure amount is measured. By repeating this operation, it is possible to measure the exposure amount of a plurality of minute regions in a matrix or a line.

However, as described above, the output of the excimer laser fluctuates with each emission of light, so that the exposure amount in a minute area changes every scanning exposure. In the above method, since scanning exposure is performed a plurality of times in measuring the exposure amount, the range in which the exposure amount varies can be measured, but the exposure amount distribution in the exposure region cannot be measured. Therefore, in order to measure the exposure dose distribution, the exposure dose must be measured in one scan.

In view of the above problems, it is an object of the present invention to provide a scanning type exposure apparatus capable of measuring the exposure dose distribution on a wafer.

[0010]

In order to achieve the above object, the first invention of the present application is to provide a light intensity measuring means composed of a plurality of light receiving elements, and the light intensity measuring means relative to an area to be measured. Scanning means for scanning, and the scanning means scans the light intensity measuring means relative to the region to be measured, and stores the light intensity sequentially received by the plurality of light receiving elements for each light receiving element. A light quantity measuring device, characterized in that the light quantity is stored in a means and the light quantity is measured using the information stored in the storage means.

With the light quantity measuring device of the first invention of the present application, the light quantity distribution can be measured in an apparatus having a scanning illumination system such as a scanning type exposure apparatus.

A second invention of the present application is characterized in that a plurality of light receiving elements are relatively scanned with respect to an illumination region, and a sensitivity variation of each light receiving element is detected from a measurement value of each light receiving element. This is a variation detection method.

By the sensitivity variation detecting method of the second invention of the present application, data for correcting the sensitivity variations of a plurality of light receiving elements can be obtained, and the light intensity can be accurately detected.

A third invention of the present application is an exposure apparatus characterized in that an exposure amount is measured by using the light amount measuring apparatus of the first invention of the present application.

According to a fourth aspect of the present invention, there is provided a light source and a scanning means for scanning an illumination area of the light emitted from the light source relative to the mask and the wafer, and the mask is wider than the illumination area. An exposure apparatus for illuminating an illuminated area on a wafer and exposing and transferring a transfer pattern formed on the mask onto the wafer, wherein the exposure apparatus has an exposure amount distribution measuring unit.

According to a fifth aspect of the present invention, there is provided a pulse light source, and a scanning means for relatively scanning an illumination area formed by a plurality of pulsed lights emitted from the pulse light source with respect to the mask and the wafer. Areas are overlapped while relatively displacing on the mask and the wafer, and an illuminated area on the mask and the wafer, which is wider than the illuminated area, is illuminated, and the transfer pattern formed on the mask is exposed and transferred to the wafer. In the exposure apparatus described above, at least the light intensity measuring means including a plurality of light receiving elements arranged in the scanning direction is provided, and the light intensity measuring means illuminates while relatively scanning the illumination area, The light intensity of the plurality of pulsed lights sequentially received by the elements is stored in the storage means for each light receiving element, and the exposure amount distribution of the illuminated region is used by using the information stored in the storage means. An exposure device and obtaining.

According to a sixth aspect of the present invention, there is provided a pulse light source and a scanning means for relatively scanning an illumination area formed by a plurality of pulsed light emitted from the pulse light source with respect to the mask and the wafer. Areas are overlapped while relatively displacing on the mask and the wafer, and an illuminated area on the mask and the wafer, which is wider than the illuminated area, is illuminated, and the transfer pattern formed on the mask is exposed and transferred to the wafer. In the exposure apparatus, which has at least a light intensity measuring unit composed of a plurality of light receiving elements arranged in the scanning direction, the light intensity measuring unit is illuminated stationary with respect to the illumination region,
The light intensity of the pulsed light incident on each light receiving element is stored in the storage unit for each pulsed light, and the light intensity stored in the storage unit is determined according to the relative displacement amount of the illumination area during actual exposure. The exposure apparatus is characterized in that the exposure amount distribution of the illuminated region is obtained by shifting the amount and adding up.

A seventh invention of the present application is a device manufacturing method characterized by manufacturing a device using the scanning exposure apparatus of the third to sixth inventions of the present application.

By using the exposure apparatus of the third to sixth inventions of the present application and the device manufacturing method of the seventh invention of the present application, I
Semiconductor devices such as C and LSI, liquid crystal devices, CCD
It is possible to accurately manufacture an image pickup device such as the above and a device such as a magnetic head.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a diagram of a scanning type exposure apparatus that best represents the features of the present invention. Reference numeral 1 is a pulse light source such as an excimer laser. Reference numeral 2 denotes a beam shaping optical system including a cylindrical lens, a beam expander, etc. for adjusting the beam shape of the pulsed light emitted from the pulsed light source 1. Reference numeral 3 is a light-reducing means such as an ND filter for adjusting the amount of pulsed light from the pulsed light source 1. 4 reduces the coherence of the pulsed light from the pulsed light source 1,
An incoherent homogenizing optical system for uniformly illuminating the reticle 11.

Reference numeral 5 is a beam splitter which allows a part of the pulsed light to enter the photodetector 16 and to transmit most of it. 6
Is a first relay lens for uniformly illuminating the field stop 7, and the light receiving surface of the photodetector 16 and the field stop 7 have a conjugate relationship. Reference numeral 7 is a field stop that narrows the light flux into a rectangular shape, 8 is a second relay lens, 9 is a mirror for bending the optical path, and 1 is a mirror.
0 is a condenser lens. The reticle 11 is uniformly illuminated by 8, 9, 10 and the field stop 7 has a conjugate relationship with the reticle 11. The reticle 11 has a pattern to be transferred at the time of actual exposure. In the present embodiment, however, the reticle having no pattern is drawn because the light intensity distribution in the illumination area and the exposure amount distribution in the exposure area are measured. It is mounted on the reticle stage 12. Alternatively, the reticle 11 is removed. 13 is a reticle 1
It is a projection lens for reducing and projecting the pattern 1 on the wafer 14.

Reference numeral 15 is a wafer stage on which the wafer 14 is mounted. An illuminance meter 17 measures the light intensity distribution in the illumination area and the exposure amount distribution in the exposure area. The light receiving section of the illuminance meter 17 employs light receiving elements arranged one-dimensionally in the scanning direction. The light receiving unit has an illuminometer 17 installed on the wafer stage 15 so that the height of the light receiving unit coincides with that of the wafer surface. Reference numeral 18 is a controller that takes in the outputs from the photodetector 16 and the illuminance meter 17, performs calculations, controls the reticle stage 12 and the wafer stage 15, and controls the light emission timing of the pulse light source 1, and 19 is the controller 1
8 is a memory for storing 8 data.

With the above configuration, when measuring the light intensity distribution in the illumination area, as shown in FIG.
The position of the wafer stage 15 is controlled by the controller 18 so that the light receiving element of the illuminance meter 17 is positioned to cover the length of the illumination area in the scanning direction, and the pulse light source 1 is caused to emit light. Then, the correction coefficient of the sensitivity variation of each light receiving element stored in the memory 19 (how to obtain the correction coefficient will be described later) is read out, and the measurement value of the corresponding light receiving element is divided to obtain each light receiving element. Eliminate the influence of the sensitivity variation between the two on the measured value. In this way,
The measured value for each light receiving element arranged in a line in the scanning direction is obtained as a light intensity distribution in the scanning direction of the illumination region. Further, by repeating the above-described measurement at the position where the light receiving element is moved in the direction perpendicular to the scanning direction, the light intensity distribution over the entire illumination area can be obtained.

Also, when the exposure amount distribution in the scanning direction of the exposure area is measured, as shown in FIG. 2B, the light receiving element of the illuminance meter 17 is located at a position where it can cover the length of the exposure area in the scanning direction. Controller 18 stops wafer stage 15 at the scanning start position. The controller 18 scans the wafer stage 15, causes the pulse light source 1 to emit light, and exposes the illuminance meter 17. During the exposure, the output value of each light receiving element of the illuminance meter 17 is integrated for each pulse, and after the exposure shown in FIG. 2C, the sensitivity variation of each light receiving element stored in the memory 19 is corrected. Read the coefficient, divide the measured value of the corresponding light receiving element,
The influence of the sensitivity variation between the light receiving elements on the measurement value is removed. In this way, the measured value for each light receiving element arranged in a line in the scanning direction is obtained as the exposure amount distribution in the scanning direction of the exposure region.

A method of correcting the sensitivity variation between the light receiving elements of the illuminance meter 17 will be described below.

This correction method is a method of obtaining a correction coefficient for the sensitivity variation from the difference in the output of the light receiving element by giving the same light exposure amount to each light receiving element. In order to give an equal exposure amount to each light receiving element, the amount of displacement of the illuminance meter 17 in the scanning direction for each pulse is an integral multiple of the element interval and is shorter than the length of the entire light receiving element, or an integer amount of the element interval. The pulse exposure may be performed at each distance. Then, the output fluctuation of the pulse light source is corrected, and the exposure amount obtained by integrating the light intensity of the cross section in the scanning direction of the illumination region is given to each light receiving element.

Examples of the light receiving element include a CCD line sensor and a photodiode array. In this embodiment, one having a length in the scanning direction of 30 mm or more is used. Further, in order to be able to sufficiently decompose the exposure dose distribution, a device interval of 20 μm and a width of about 20 μm in the direction perpendicular to the scanning direction can be considered.

The procedure for obtaining the correction coefficient of the sensitivity variation between the respective light receiving elements when the light receiving elements having the number M of elements and the element spacing p is adopted in the illuminance meter 17 will be described below with reference to the flowchart of FIG. It demonstrates using.

In step 1, first, as shown in FIG. 4A, all the light receiving elements are made to stand still at a position where they do not cover the illumination area. As an initial value, the distance from the first light receiving element to the illumination area is L0, the interval at which the wafer stage 15 scans while the pulse light source 1 emits light once is P, and the scanning until all the light receiving elements pass through the illumination area. Let the distance be L. That is, the scanning range and scanning conditions of the stage are set to correct the sensitivity unevenness of the line sensor.

Here, L0 is a distance sufficient for the wafer stage 15 to start scanning and reach a constant speed, and P is a distance which is an integral multiple of the element interval p or is an integer fraction.

In step 2, the controller 18 starts scanning the wafer stage 15.

In step 3, it is determined whether the wafer stage 15 has reached a certain speed. If No, go to Step 4, and if Yes, go to Step 5.

In step 4, the speed is adjusted so that the wafer stage 15 has a desired speed.

In step 5, the controller 18 causes the pulse light source 1 to emit light for the first time before the light receiving element reaches the illuminated area. At this time, the number of times of light emission of the pulse light source 1 is set to i = 1, and thereafter the controller 18 counts i. Then, the controller 18 outputs the output from the photodetector 16 that monitors the output of part of the pulse light source 1.
And the measured value E1 is stored in the memory 19.

In step 6, when the wafer stage 15 moves by a constant value P (an integer multiple or an integer fraction of the element spacing) determined by the light receiving element spacing p, the pulse light source 1 is caused to emit light for the second time. The output Vk2 of each light receiving element (k is the order position of the light receiving element: 1 ≦ k ≦ M) and the output E from the photodetector 16
2 is taken in by the controller 18 and stored in the memory 19.

After that, the wafer stage 15 is moved to P for a predetermined interval.
The pulse light source 1 is caused to emit light (i is the number of times of light emission) each time the scanning is performed, and the output Vki of each light receiving element and the output Ei of the photodetector 16 are taken into the controller 18 and stored in the memory 19.

In step 7, as shown in FIG. 4B, if the wafer stage 15 scans by the scanning distance L until the light receiving element passes through the illumination area, step 8 follows.
Proceed to.

At step 8, Ei, V are read from the memory 19.
Call ki. A correction coefficient αi = Ei / E1 for the output variation of the pulse light source is obtained with E1 as a reference. V with αi
When ki is divided, the fluctuation of Vki due to the influence of the output variation of the pulse light source 1 is removed.

Next, the integrated value of the output of the k-th light receiving element can be expressed as Σ (Vki / αi). Where Σ (Vki / α
i) is a value obtained by integrating the light intensity distribution of the cross section of the illumination area in the scanning direction, and is an integrated value Σ (V1i / αi), ..., Σ (V
Mi / αi) becomes equal if there is no sensitivity variation among the light receiving elements. That is, the difference in the values of Σ (Vki / αi) corresponds to the sensitivity variation. Therefore, by standardizing the integrated value of the other light receiving elements with the first integrated value Σ (V1i / αi) of the light receiving elements (k = 1), the correction coefficient βk = Σ (Vki / Α
i) / Σ (V1i / αi) is obtained. Then, these correction coefficients are stored in the memory 19.

In step 9, the procedure for obtaining the correction coefficient ends.

Further, in the above-described embodiment, when the sensitivity variation correction coefficient of the line sensor is obtained, the illuminance meter 17 is scanned and measured. However, the illuminance meter 17 is measured by scanning the wafer stage by an integral multiple or a fraction of the element interval. It is also possible to obtain the sensitivity variation correction coefficient of the line sensor by the operation of moving and moving and stopping the pulse exposure. In addition, if the exposure is performed a plurality of times at the stopped position to perform the integrated exposure, an effect of averaging the influence of the output fluctuation of the light source is produced.

Regarding the present embodiment, whether the shape of the illumination area on the wafer surface is rectangular as shown in FIG. 2 or the shape of the illumination area as shown in FIG. While the length of the illumination area in the right angle direction is about 30 mm, the width of the light receiving element of the illuminometer 17 in the direction perpendicular to the scanning direction is very small at 20 μm, so that the illuminance distribution is independent of the shape of the illumination area. , And the exposure dose distribution can be measured.

In the above embodiment, the length of the light receiving element is set to a length (30 mm or more) capable of covering the exposure area in the scanning direction, but this length is covered by the length of the illumination area in the scanning direction (about 5 mm). The exposure dose distribution can be measured even if the length is shortened. In this case, the illuminance meter is not scanned and exposure is performed in a state where the illuminance meter is stationary at a position covering the illumination area in the scanning direction, and the illuminance distribution of the illumination area is measured. Save the measured value of the output from each light receiving element for each pulse exposure,
After the exposure is completed, the exposure amount distribution is obtained by shifting the measured values for each pulse by the number of elements corresponding to the displacement amount of the wafer stage for each pulse emission at the time of actual exposure and integrating the measured values.

Further, as shown in FIG. 6, the light intensity distribution shape of the cross section of the illumination area in the scanning direction is rectangular (see FIG. 6).
(A)), trapezoidal shape (FIG. 6 (b)), Gaussian distribution shape (FIG. 6 (c)), the width of the illumination area in the scanning direction is about 5 mm. On the other hand, since the width of the light receiving element of the timepiece 17 in the scanning direction is as small as 20 μm, the change in each light distribution shape can be sufficiently resolved,
It is possible to measure the light intensity distribution and the exposure amount distribution of the illumination region regardless of the shape of the light intensity distribution of the cross section in the scanning direction of the illumination region.

In the above embodiment, the pulsed light source is used as the light source. However, even when a continuous light source such as a mercury lamp or a YAG laser is used, the correction coefficient for the sensitivity variation between the light receiving elements is obtained. Method and an exposure apparatus capable of measuring the exposure dose distribution in the exposure area without being affected by fluctuations in the output of the light source, by using the illuminance meter employing a one-dimensionally arranged light receiving element in the light receiving section Can be realized.

In the above embodiments, the light receiving elements arranged one-dimensionally in the scanning direction are adopted in the illuminometer, but the light receiving elements arranged two-dimensionally in the scanning direction and the direction perpendicular to the scanning direction are adopted. Also, by using the method for correcting the sensitivity variation between the light receiving elements described above, it is possible to realize an exposure apparatus that can measure the exposure dose distribution in the exposure region under the same conditions as the actual exposure.

Next, an embodiment of a method of manufacturing a semiconductor device using the projection exposure apparatus of FIG. 1 will be described. FIG. 7 shows a manufacturing flow of semiconductor devices (semiconductor chips such as IC and LSI, liquid crystal panels and CCDs). In step 71 (circuit design), the circuit of the semiconductor device is designed. Step 7
In 2 (mask manufacturing), a mask (reticle 11) on which the designed circuit pattern is formed is manufactured. Step 7
In 3 (wafer manufacturing), a wafer (wafer 14) is manufactured using a material such as silicon. Step 74 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by the lithography technique using the mask and the wafer prepared above. The next step 75 (assembly) is called a post-process, and is a process of forming a chip using the wafer created in step 74. Including. Step 76 (inspection)
Then, inspections such as an operation confirmation test and a durability test of the semiconductor device created in step 75 are performed. Through these steps, the semiconductor device is completed and shipped (step 77).

FIG. 8 shows a detailed flow of the wafer process. In step 81 (oxidation), a wafer (wafer 1
4) The surface is oxidized. In step 82 (CVD), an insulating film is formed on the surface of the wafer. In step 83 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 84 (ion implantation), ions are implanted in the wafer. In step 85 (resist processing), a resist (photosensitive material) is applied to the wafer. In step 86 (exposure), the projection exposure apparatus exposes the wafer with an image of the circuit pattern of the mask (reticle 11). In step 87 (development), the exposed wafer is developed. In step 88 (etching), parts other than the developed resist are removed. In step 89 (resist stripping), the resist that is no longer needed after etching is removed. By repeating these steps, a circuit pattern is formed on the wafer.

By using the manufacturing method of this embodiment, it becomes possible to manufacture a highly integrated semiconductor device, which has been difficult in the past.

[0050]

As described above, by using the light quantity measuring apparatus of the present invention in the scanning type exposure apparatus, it is possible to measure the exposure amount distribution in the scanning direction of the exposure area, which is impossible with the conventional scanning type exposure apparatus. Can be measured under the same conditions as the actual exposure, an appropriate exposure amount can be given to the wafer, and uniform exposure can be performed.

[Brief description of drawings]

FIG. 1 is a system configuration diagram of an entire scanning exposure apparatus to which the present invention is applied.

FIG. 2 is an explanatory diagram for measuring a light intensity distribution in an illumination area and an exposure amount distribution in an exposure area.

FIG. 3 is a flowchart for obtaining a correction coefficient for sensitivity variation between light receiving elements.

FIG. 4 is an explanatory diagram of an operation when obtaining a correction coefficient of sensitivity variation between light receiving elements and a correction coefficient.

FIG. 5 is a diagram showing an arcuate illumination area.

FIG. 6 is a diagram showing a shape of a light intensity distribution of a cross section in the scanning direction of an illumination region.

FIG. 7 is a diagram showing a manufacturing process of a semiconductor device.

FIG. 8 is a diagram showing details of a wafer process during the step of FIG. 7;

[Explanation of symbols]

 1 pulse light source 2 beam shaping optical system 3 dimming means 4 incoherent / uniformizing optical system 5 beam splitter 6 first relay lens 7 field stop 8 second relay lens 9 mirror 10 condenser lens 11 reticle 12 reticle stage 13 projection lens 14 Wafer 15 Wafer stage 16 Photodetector 17 Illuminance meter 18 Controller 19 Memory

Claims (16)

[Claims] 1. A light intensity measuring means comprising a plurality of light receiving elements, and a scanning means for scanning the light intensity measuring means relative to an area to be measured. The light intensity measuring means by the scanning means. The light intensity sequentially received by the plurality of light receiving elements while scanning relative to the measured region is stored in the storage means for each light receiving element, and the light amount is calculated using the information stored in the storage means. A light quantity measuring device characterized by measuring. 2. The light quantity measuring device according to claim 1, wherein the plurality of light receiving elements are arranged at least in the scanning direction. 3. A correction means for correcting sensitivity variations among the plurality of light receiving elements is provided.
2. The light quantity measuring device according to 2. 4. A method for detecting a variation in sensitivity, wherein a plurality of light receiving elements are relatively scanned with respect to an illumination area, and a variation in sensitivity of each light receiving element is detected from a measured value of each light receiving element. . 5. The illumination area is formed by pulsed light, and when the element spacing in the scanning direction of the plurality of light receiving elements is sufficiently smaller than the width of the illumination area in the scanning direction, the plurality of light receiving elements of the plurality of light receiving elements are formed. A relative displacement amount for each pulsed light with respect to the illumination region is an integral multiple of an element interval in the scanning direction of the plurality of light receiving elements, and is smaller than a length in the scanning direction of the plurality of light receiving elements. The method for detecting a variation in sensitivity according to claim 4. 6. When the illumination area is formed by pulsed light, a relative displacement amount of each of the plurality of light receiving elements with respect to the illumination area for each pulsed light is an element in a scanning direction of the plurality of light receiving elements. 5. The method for detecting variation in sensitivity according to claim 4, wherein the interval is 1 / integral. 7. An exposure apparatus, wherein the exposure amount is measured by using the light amount measuring apparatus according to claim 1. 8. A light source and a scanning means for scanning an illumination area of light emitted from the light source relative to the mask and the wafer, and the object on the mask and the wafer wider than the illumination area. An exposure apparatus for illuminating an illumination area and exposing and transferring a transfer pattern formed on the mask onto the wafer, comprising an exposure amount distribution measuring unit. 9. The exposure amount distribution measuring means illuminates the light intensity measuring means composed of a plurality of light receiving elements and scans the light intensity measuring means relative to the illumination area to illuminate the plurality of light receiving elements. 9. A storage unit for storing, for each light receiving element, the intensity of light sequentially received by the element.
The exposure apparatus described. 10. The exposure apparatus according to claim 9, wherein the plurality of light receiving elements are arranged at least in the scanning direction. 11. A mask comprising a pulsed light source and a scanning means for relatively scanning an illumination area formed by a plurality of pulsed lights emitted from the pulsed light source with respect to a mask and a wafer, the illumination area being the mask. And an exposure apparatus for illuminating the mask and an illuminated area on the wafer that are wider than the illumination area while overlapping them while relatively displacing on the wafer, and exposing and transferring the transfer pattern formed on the mask onto the wafer. A light intensity measuring unit including at least a plurality of light receiving elements arranged in the scanning direction, illuminating the light intensity measuring unit while scanning relative to the illumination area, and the plurality of light receiving elements sequentially receiving light. The light intensity of the plurality of pulsed lights is stored in the storage means for each light receiving element, and the exposure amount distribution of the illuminated area is obtained using the information stored in the storage means. Characteristic exposure equipment. 12. A mask comprising: a pulse light source; and a scanning unit that scans an illumination area formed by a plurality of pulsed lights emitted from the pulse light source sequentially with respect to a mask and a wafer, the illumination area being the mask. And an exposure apparatus for illuminating the mask and an illuminated area on the wafer that are wider than the illumination area while overlapping them while relatively displacing on the wafer, and exposing and transferring the transfer pattern formed on the mask onto the wafer. , Light of the pulsed light having a light intensity measuring unit composed of at least a plurality of light receiving elements arranged in the scanning direction, illuminating the light intensity measuring unit stationary with respect to the illumination area, and entering each light receiving element. The intensity is stored in the storage means for each pulsed light, and the light intensity stored in the storage means is shifted by an amount corresponding to the relative displacement amount of the illumination area at the time of actual exposure and integrated. An exposure apparatus, wherein an exposure amount distribution of the illuminated area is obtained. 13. A correction means for correcting sensitivity variations among the plurality of light receiving elements is provided.
13. The exposure apparatus according to any one of 1 to 12. 14. The exposure apparatus according to claim 8, wherein the light intensity measuring means is a one-dimensional line sensor. 15. The exposure apparatus according to claim 8, wherein the light intensity measuring means is a two-dimensional area sensor. 16. A device manufacturing method comprising manufacturing a device using the exposure apparatus according to claim 8.