JPH09330991A - Leadless ceramic multilayered substrate - Google Patents

Leadless ceramic multilayered substrate

Info

Publication number
JPH09330991A
JPH09330991A JP15202496A JP15202496A JPH09330991A JP H09330991 A JPH09330991 A JP H09330991A JP 15202496 A JP15202496 A JP 15202496A JP 15202496 A JP15202496 A JP 15202496A JP H09330991 A JPH09330991 A JP H09330991A
Authority
JP
Japan
Prior art keywords
substrate
wiring layer
hole
pads
leadless
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP15202496A
Other languages
Japanese (ja)
Inventor
Takeshi Saito
剛 斉藤
Osamu Izumi
修 和泉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Engineering Ltd
Original Assignee
NEC Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Engineering Ltd filed Critical NEC Engineering Ltd
Priority to JP15202496A priority Critical patent/JPH09330991A/en
Publication of JPH09330991A publication Critical patent/JPH09330991A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0296Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
    • H05K1/0298Multilayer circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • H05K3/3431Leadless components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/36Assembling printed circuits with other printed circuits
    • H05K3/368Assembling printed circuits with other printed circuits parallel to each other
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/403Edge contacts; Windows or holes in the substrate having plural connections on the walls thereof

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent the occurrence of a nonconducting state which occurs when a metal is eroded by solder at the time of mounting and connecting a leadless ceramic multilayered substrate on and to a device. SOLUTION: When soldering 4 is performed at the corner edge section of a substrate 1 between a rear-surface pad 12 and an open through hole 11 on the side face of a through hole 11, the hole 11 is eroded by the solder 4, but, since the pad 12 is electrically connected to the hole through a via hole 15 and a wiring layer 16 in the substrate 1, the electrical connection between the pad 12 and hole 11 can be maintained even when disconnection occurs at the edge of the substrate 11 due to the erosion.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明はリードレスセラミッ
ク多層基板に関し、特に携帯電話機等の小形化が要求さ
れる通信機器に使用されるパワーアンプ用マルチチップ
集積回路(MCIC)のリードレスセラミック多層基板
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a leadless ceramic multilayer substrate, and more particularly, to a leadless ceramic multilayer substrate for a power amplifier multi-chip integrated circuit (MCIC) used in a communication device such as a mobile phone which requires miniaturization. It is about.

【0002】[0002]

【従来の技術】携帯電話機等に使用されるパワーアンプ
のMCICは、低電圧化や低消費電力化等と共に、パッ
ケージ小型化が要求される。この要求に対する一つの手
段としてリードレス化がある。図2にセラミック多層基
板を用いたリードレスタイプのMCICの外観図を示し
ており、(A)は上面斜視図、(B)は裏面斜視図であ
る。
2. Description of the Related Art A power amplifier MCIC used in a mobile phone or the like is required to have a smaller package as well as a lower voltage and lower power consumption. There is leadless as one means to meet this demand. 2A and 2B are external views of a leadless type MCIC using a ceramic multilayer substrate. FIG. 2A is a top perspective view and FIG. 2B is a rear perspective view.

【0003】図2において、リードレス多層基板1の裏
面(一主表面)上には複数のパッド12とグランドメタ
ル層14とが形成されており、これ等各ハッド12,グ
ランドメタル層14に夫々対応して側面上に沿って電気
的接続用のオープンスルーホール(半円筒状の溝部)1
1,13が設けられている。尚、2は上面カバーであ
る。
In FIG. 2, a plurality of pads 12 and a ground metal layer 14 are formed on the back surface (one main surface) of the leadless multi-layer substrate 1. These pads 12 and ground metal layer 14 are respectively formed. Correspondingly, an open through hole (semi-cylindrical groove) for electrical connection along the side surface 1
1, 13 are provided. In addition, 2 is a top cover.

【0004】図2から判る様に、基板から飛び出す様に
形成されていた従来のリードをなくして小型化を図った
ものである。
As can be seen from FIG. 2, the conventional leads, which are formed so as to project from the substrate, are eliminated to achieve miniaturization.

【0005】尚、図3はこのリードレス多層セラミック
基板1を側面から内部を透視する様にして描いた透視図
であり、本例では、グランドメタル層14を含んで計5
層構造のセラミック基板となっており、これ等層間接続
はビアホール15を介して行われる。
FIG. 3 is a perspective view of the leadless multilayer ceramic substrate 1 as seen through the inside from the side surface. In this example, a total of 5 layers including the ground metal layer 14 are included.
It is a ceramic substrate having a layered structure, and these interlayer connections are made through via holes 15.

【0006】この様なリードをなくしたリードレスタイ
プの基板において、外部インタフェースとの接続方法に
ついて説明する。図4に示す如く、外部インタフェース
(装置)3の部品搭載面上に、このリードレスMCIC
を、裏面が載置される様に搭載せしめる。そして、MC
IC1の側面上の各オープンホール11に半田付け4を
行って、外部インタフェース3上の対応する回路部分に
電気的接続を行うようになっている。
A method of connecting to an external interface in a leadless type substrate without such a lead will be described. As shown in FIG. 4, the leadless MCIC is mounted on the component mounting surface of the external interface (device) 3.
, So that the back side is placed. And MC
Each open hole 11 on the side surface of the IC 1 is soldered 4 to electrically connect to a corresponding circuit portion on the external interface 3.

【0007】この様に、基板1と外部インタフェース部
3との電気的導通の主体となるのは、オープンスルーホ
ール11部分の半田付け4であり、よってオープンスル
ーホール11には、半田付け可能な様にメタライズが施
されている。この場合の金属としては、銀パラジウム
(AgPd)が用いられている。
As described above, the main component of electrical conduction between the substrate 1 and the external interface section 3 is the soldering 4 of the open through hole 11, and therefore the open through hole 11 can be soldered. Is metalized like this. Silver palladium (AgPd) is used as the metal in this case.

【0008】[0008]

【発明が解決しようとする課題】図4の○印部分である
基板1のエッジ部分の拡大図を図5に示す。オープンス
ルーホール11と裏面パッド12との電気的接続は、図
5(A)の如く、基板外周面上で銀パラジウムメタル層
をもって行われることになり、基板エッジ近傍でのメタ
ル層の厚さに着目すると、このエッジ部分(角部)が最
も薄くなることが判る。
FIG. 5 shows an enlarged view of the edge portion of the substrate 1 which is the circled portion in FIG. The electrical connection between the open through hole 11 and the back surface pad 12 is made with a silver-palladium metal layer on the outer peripheral surface of the substrate, as shown in FIG. Focusing on this, it can be seen that this edge portion (corner) is the thinnest.

【0009】この様な構造で、電気的接続のための半田
付け4が行われるわけであるが、この部分のメタルであ
る銀パラジウムはメタルの中でも特に半田に侵食され易
い性質がある。そのために、基板エッジ部分の厚さの薄
いメタル部分で侵食が生ずると、その部分で断線が生じ
易くなり、電気的導通不良を起こす危険性がある。
With such a structure, the soldering 4 for electrical connection is performed. The metal of this portion, silver palladium, has a property of being particularly apt to be eroded by the solder. Therefore, if corrosion occurs in the thin metal portion of the substrate edge portion, disconnection is likely to occur in that portion, and there is a risk of electrical failure.

【0010】当該侵食作用について以下に詳述する。金
属と半田とが反応して合金が形成されると(図5(B)
の5参照)、多層基板の層間絶縁物(セラミック)に接
着しない現象が生じ、この状態は半田の金属への過度侵
食であるといえる。
The erosion effect will be described in detail below. When the metal reacts with the solder to form an alloy (FIG. 5B)
5), the phenomenon of not adhering to the interlayer insulator (ceramic) of the multilayer substrate occurs, and this state can be said to be excessive erosion of the solder to the metal.

【0011】絶縁物に接着された金属と融解した半田と
を反応させるとき、過度侵食を促進する要因について次
の,2つの点から考える。
Factors that promote excessive erosion when reacting the metal adhered to the insulator and the molten solder will be considered from the following two points.

【0012】金属表面について; 要因A:金属の種類(半田と反応し易い金属) 要因B:金属の反応能力に不適切な多量の半田 絶縁物裏面について; 要因A:絶縁物と金属の接着方法及び接着強度 要因B:絶縁物と合金との接着能力。Regarding metal surface: Factor A: Kind of metal (metal that easily reacts with solder) Factor B: Large amount of solder unsuitable for reaction ability of metal Regarding back surface of insulator; Factor A: Adhesion method between insulator and metal And adhesive strength Factor B: Adhesive ability between an insulator and an alloy.

【0013】以上の侵食促進要因の対策を以下に示す。
但し、要因−Bについては、人為的に操作することは
困難であるので、要因−A,−B,−Aについて
考えると、「金属の選択」,「適切な半田量の選択」及
び「金属と絶縁物との接着方法の選択」の3つが挙げら
れる。
The countermeasures against the above erosion promoting factors are shown below.
However, since it is difficult to artificially operate the factor-B, considering the factors-A, -B, and -A, "selection of metal", "selection of appropriate amount of solder", and "metal" are considered. And the selection of the method of adhering the insulating material ”.

【0014】第1の「金属の選択」はコスト面から選択
肢がなく、また第3の「接着方法の選択」は基板メーカ
の技術的な問題から選択肢がないので、第2の「半田量
の選択」に絞ることにする。
The first "selection of metal" has no option in terms of cost, and the third "selection of bonding method" has no option due to technical problems of the board maker. I will narrow down to "selection".

【0015】この場合、大量生産ラインにおいて組立て
の際に用いられる半田ペーストはその量がほぼ決まって
いる。従って、逆に金属の量(厚さと面積)に着目して
考察し、その結果を以下に示す。
In this case, the amount of solder paste used during assembly in a mass production line is almost fixed. Therefore, conversely, the amount of metal (thickness and area) is considered and considered, and the result is shown below.

【0016】金属(AgPd)の厚さを8μmから15
μmとしたとき、半田ディップ(240℃,10秒の条
件)で、裏面パッドと側面のオープンスルーホール部と
の導通試験をした結果、オープン(非導通)になるまで
の回数が、3回から5回に向上した。しかし、この方法
では、コスト面で不利であるばかりか、完全にオープン
スルーホールと裏面パッドとの非導通化を防止すること
ができない。
The thickness of the metal (AgPd) is changed from 8 μm to 15
When it is set to μm, the continuity test between the back surface pad and the open through hole on the side surface is conducted by solder dip (240 ° C., 10 seconds condition). Improved to 5 times. However, this method is not only disadvantageous in terms of cost, but also cannot completely prevent non-conduction between the open through hole and the back surface pad.

【0017】本発明の目的は、オープンスルーホールと
裏面パッドとの非導通化を防止することができるように
したリードレスセラミック多層基板を提供することであ
る。
An object of the present invention is to provide a leadless ceramic multilayer substrate capable of preventing non-conduction between the open through hole and the back surface pad.

【0018】[0018]

【課題を解決するための手段】本発明によれば、複数層
の多層配線層と、この多層配線層の一主面上に設けられ
た複数のパッドと、前記多層配線層の側面上に形成され
かつ前記パッドの各々に対応して設けられて対応パッド
と電気的に接続された複数の金属配線層とを含み、前記
パッドが設けられている前記一主面を装置の基板搭載面
に搭載せしめ、前記金属配線層の各々と前記基板搭載面
上の回路との接続を半田付けにてなすようにしたリード
レスセラミック多層基板であって、前記パッドの各々と
対応金属配線層との電気的接続用配線を内部に有するこ
とを特徴とするリードレスセラミック多層基板が得られ
る。
According to the present invention, a plurality of multilayer wiring layers, a plurality of pads provided on one main surface of the multilayer wiring layer, and a plurality of pads formed on side surfaces of the multilayer wiring layer are formed. And a plurality of metal wiring layers provided corresponding to each of the pads and electrically connected to the corresponding pads, and the one main surface on which the pads are provided is mounted on a substrate mounting surface of the device. At least, it is a leadless ceramic multilayer substrate in which each of the metal wiring layers and the circuit on the substrate mounting surface are connected by soldering, and the electrical connection between each of the pads and the corresponding metal wiring layer is performed. A leadless ceramic multilayer substrate having a connection wiring therein can be obtained.

【0019】[0019]

【発明の実施の形態】本発明の作用について述べる。DESCRIPTION OF THE PREFERRED EMBODIMENTS The operation of the present invention will be described.

【0020】多層配線の内層の一部にパッドを作成し、
オープンスルーホールと接続する。このパッドを基板内
部の回路とまた、裏面パッドとビアホールにて接続す
る。これにより、基板エッジ部の銀パラジウムが半田に
侵食されてオープンスルーホールと裏面パッドとが非導
通状態になっても、オープンスルーホールは中間層のパ
ッドと接続されているので、外部インタフェースと基板
内部の回路が非導通になることはなくなる。
A pad is formed on a part of the inner layer of the multilayer wiring,
Connect with open through holes. This pad is connected to the circuit inside the substrate and also to the back surface pad by a via hole. As a result, even if the silver-palladium on the edge of the board is eroded by the solder and the open through hole and the back surface pad become non-conductive, the open through hole is connected to the pad of the intermediate layer, so that the external interface and the board are not connected. The internal circuit will never become non-conductive.

【0021】実際、240℃,10秒の半田ディップ
で、裏面パッドと側面のオープンスルーホール部の導通
試験をした結果、5回〜6回でエッジ部の銀パラジウム
は半田侵食されたが、裏面,側面間は非導通にならなか
った(目標回数で100%導通)。
Actually, a solder dip at 240 ° C. for 10 seconds was used to conduct a continuity test between the back surface pad and the side open through holes. , There was no non-conduction between the sides (100% conduction in the target number of times).

【0022】以上から客先において装置への自動搭載が
可能になり非導通不良が低減することから、工数削減及
び歩留まり向上の効果が得られる。
As described above, since the customer can automatically mount the apparatus on the apparatus and the non-conducting defects are reduced, the effect of reducing the man-hours and improving the yield can be obtained.

【0023】以下、図面を用いて本発明の実施例につい
て説明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0024】図1は本発明の実施例の一部断面図であ
り、図2〜図5と同等部分は同一符号にて示されてい
る。図1を参照すると、裏面パッド12とそれに対応す
る側面オープンスルーホール11とが基板1の外周面で
接続されており、これは従来例と同様である。尚、この
オープンスルーホール11は銀パラジウム(AgPd)
のメタル層であるものとする。
FIG. 1 is a partial sectional view of an embodiment of the present invention, in which the same parts as those in FIGS. 2 to 5 are designated by the same reference numerals. Referring to FIG. 1, a back surface pad 12 and a side open through hole 11 corresponding to the back surface pad 12 are connected to each other on the outer peripheral surface of the substrate 1, which is similar to the conventional example. The open through hole 11 is silver palladium (AgPd).
It is assumed to be a metal layer of.

【0025】また、基板1の内部においても、パッド1
2とオープンスルーホール11とをビアホール15及び
基板内部中間層の回路配線層により接続する。
Also inside the substrate 1, the pad 1
2 and the open through hole 11 are connected by the via hole 15 and the circuit wiring layer of the intermediate layer inside the substrate.

【0026】基板エッジ部分の銀パラジウムが、外部イ
ンタフェース3との接続のための半田4により侵食を受
けて、オープンスルーホール11と裏面パッド12とが
非導通になっても、基板内部の中間層配線とビアホール
とにより、接続されているので、非導通となることはな
い。
Even if the silver palladium on the edge portion of the substrate is corroded by the solder 4 for connecting to the external interface 3 and the open through hole 11 and the back surface pad 12 become non-conducting, the intermediate layer inside the substrate. Since it is connected by the wiring and the via hole, it does not become non-conductive.

【0027】[0027]

【発明の効果】この様に、本発明によれば、基板内部に
も裏面パッドとオープンスルーホールとを接続する回路
を設けたので、半田侵食作用による両者の非導通が防止
できるという効果がある。
As described above, according to the present invention, since the circuit for connecting the back surface pad and the open through hole is provided inside the substrate as well, there is an effect that the non-conduction of both due to the solder erosion effect can be prevented. .

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例を示す一部断面図である。FIG. 1 is a partial cross-sectional view showing an embodiment of the present invention.

【図2】(A)はMCICの上面斜視図、(B)はその
裏面斜視図である。
2A is a top perspective view of the MCIC, and FIG. 2B is a rear perspective view thereof.

【図3】MCICの多層セラミック基板の側面透視図で
ある。
FIG. 3 is a side perspective view of a multilayer ceramic substrate of an MCIC.

【図4】多層セラミック基板と外部インタフェースとの
接続関係を示す図である。
FIG. 4 is a diagram showing a connection relationship between a multilayer ceramic substrate and an external interface.

【図5】(A)は図4の一部拡大図、(B)は半田侵食
を説明する図である。
5A is a partially enlarged view of FIG. 4, and FIG. 5B is a diagram illustrating solder erosion.

【符号の説明】[Explanation of symbols]

1 リードレス多層セラミック基板 2 カバー 3 外部インタフェース 4 半田 11 オープンスルーホール 12 裏面パッド 15 ビアホール 16 配線層 1 Leadless Multilayer Ceramic Substrate 2 Cover 3 External Interface 4 Solder 11 Open Through Hole 12 Backside Pad 15 Via Hole 16 Wiring Layer

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 複数層の多層配線層と、この多層配線層
の一主面上に設けられた複数のパッドと、前記多層配線
層の側面上に形成されかつ前記パッドの各々に対応して
設けられて対応パッドと電気的に接続された複数の金属
配線層とを含み、前記パッドが設けられている前記一主
面を装置の基板搭載面に搭載せしめ、前記金属配線層の
各々と前記基板搭載面上の回路との接続を半田付けにて
なすようにしたリードレスセラミック多層基板であっ
て、前記パッドの各々と対応金属配線層との電気的接続
用配線を内部に有することを特徴とするリードレスセラ
ミック多層基板。
1. A multi-layered wiring layer, a plurality of pads provided on one main surface of the multi-layered wiring layer, and a plurality of pads formed on a side surface of the multi-layered wiring layer and corresponding to each of the pads. A plurality of metal wiring layers provided and electrically connected to corresponding pads, the one main surface on which the pads are provided is mounted on a substrate mounting surface of the device, and each of the metal wiring layers A leadless ceramic multilayer substrate in which a circuit on a substrate mounting surface is connected by soldering, and a wiring for electrical connection between each of the pads and a corresponding metal wiring layer is provided inside. And leadless ceramic multilayer board.
【請求項2】 前記電気的接続用配線は、一端部が前記
パッドと接続され前記多層配線層の中間層まで伸びたビ
アホールと、このビアホールの他端と前記金属配線層と
を接続する接続層とからなることを特徴とする請求項1
記載のリードレスセラミック多層基板。
2. The electrical connection wiring has a via hole having one end connected to the pad and extending to an intermediate layer of the multilayer wiring layer, and a connection layer connecting the other end of the via hole and the metal wiring layer. And consisting of:
Leadless ceramic multilayer substrate as described.
【請求項3】 前記金属配線層は、前記多層配線層の側
面上に設けられたオープンスルーホールの内周面に被着
形成されていることを特徴とする請求項1または2記載
のリードレスセラミック多層基板。
3. The leadless according to claim 1, wherein the metal wiring layer is adhered to an inner peripheral surface of an open through hole provided on a side surface of the multilayer wiring layer. Ceramic multilayer substrate.
【請求項4】 前記金属配線層はAgPdであり、前記
多層配線層の層間絶縁物はセラミックであることを特徴
とする請求項1〜3いずれか記載のリードレスセラミッ
ク多層基板。
4. The leadless ceramic multilayer substrate according to claim 1, wherein the metal wiring layer is AgPd, and the interlayer insulating material of the multilayer wiring layer is ceramic.
JP15202496A 1996-06-13 1996-06-13 Leadless ceramic multilayered substrate Withdrawn JPH09330991A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15202496A JPH09330991A (en) 1996-06-13 1996-06-13 Leadless ceramic multilayered substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15202496A JPH09330991A (en) 1996-06-13 1996-06-13 Leadless ceramic multilayered substrate

Publications (1)

Publication Number Publication Date
JPH09330991A true JPH09330991A (en) 1997-12-22

Family

ID=15531400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15202496A Withdrawn JPH09330991A (en) 1996-06-13 1996-06-13 Leadless ceramic multilayered substrate

Country Status (1)

Country Link
JP (1) JPH09330991A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013045842A (en) * 2011-08-23 2013-03-04 Sharp Corp Light-emitting device
CN111599789A (en) * 2020-05-13 2020-08-28 中国电子科技集团公司第十三研究所 Ceramic leadless chip type packaging structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013045842A (en) * 2011-08-23 2013-03-04 Sharp Corp Light-emitting device
CN111599789A (en) * 2020-05-13 2020-08-28 中国电子科技集团公司第十三研究所 Ceramic leadless chip type packaging structure

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