JPH09319323A - Constant current driving circuit - Google Patents

Constant current driving circuit

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Publication number
JPH09319323A
JPH09319323A JP13302996A JP13302996A JPH09319323A JP H09319323 A JPH09319323 A JP H09319323A JP 13302996 A JP13302996 A JP 13302996A JP 13302996 A JP13302996 A JP 13302996A JP H09319323 A JPH09319323 A JP H09319323A
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connected
output
mis transistor
constant current
terminal
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JP13302996A
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Japanese (ja)
Inventor
Yasunori Iwamoto
Atsuhito Sugiura
恭典 岩本
篤仁 杉浦
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Toshiba Corp
Toshiba Microelectron Corp
東芝マイクロエレクトロニクス株式会社
株式会社東芝
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Abstract

PROBLEM TO BE SOLVED: To make the output current not fluctuate even when an external load to be connected to the output terminal of a constant current circuit is changed, and to obtain a constant current even in the low saturation area of voltage, and also to set the output voltage low by providing a variable resistor whose resistance value is varied by a prescribed signal linked with output signal.
SOLUTION: The variable resistor R performing a prescribed operation by being linked with an output signal to be outputted from the output terminal of a constant current driving circuit 190 is connected to between the drain terminal and the gate terminal of the MIS transistor of an input side. Then, the resistance value of the variable resistor R is changed by the output of the constant current driving circuit 190 via a level shifting means. As a result, even though the external load connected to the output terminal of the circuit 19 is changed and the output voltage of the circuit 190 is fluctuated, the fluctuation can be compensated and the constant current 190 driving circuit 190 whose output current does not fluctuate is obtained.
COPYRIGHT: (C)1997,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は定電流回路に関するもので、特に発光ダイオード(LED)等を駆動する定電流駆動回路に使用されるものである。 BACKGROUND OF THE INVENTION The present invention relates to a constant current circuit, and is used in the constant current driving circuit for particular driving a light emitting diode (LED) or the like.

【0002】 [0002]

【従来の技術】従来の定電流回路を図7に示した。 BACKGROUND ART The conventional constant current circuit shown in FIG. 図7 Figure 7
に示すように、定電流回路1は、二つの同じチャンネル導電型のMOSトランジスタM1、M2から構成されるカレントミラー回路2と、このカレントミラー回路2に電流を供給する定電流源Iで構成されている。 As shown in the constant current circuit 1 includes a current mirror circuit 2 composed of MOS transistors M1, M2 of the two of the same channel conductivity type, a constant current source I supplies current to the current mirror circuit 2 ing.

【0003】この定電流回路1から出力される出力電流I2は、定電流源Iからカレントミラー回路2に入流する電流I1と、カレントミラー回路2を構成する二つのMOSトランジスタM1、M2のチャネル幅W1、W2 [0003] The output current I2 output from the constant current circuit 1 includes a current I1 that Iriryu to the current mirror circuit 2 from the constant current source I, the channel width of the two MOS transistors M1, M2 constituting the current mirror circuit 2 W1, W2
により、下式で決定される。 Accordingly, as determined by the following equation. I2=(W2/W1)×I1 (式1) 上式から分かるように、MOSトランジスタM1、M2 I2 = (W2 / W1) × I1 as can be seen from equation (1) where, MOS transistors M1, M2
のチャンネル幅W1、W2を調節する事で、容易に入力電流の実数倍の出力電流を得る事が出来る。 By adjusting the channel widths W1, W2, and it is possible to obtain a real number times the output current of easily input current.

【0004】この定電流回路1の出力電圧Vo対出力電流Ioの特性(以下、出力特性と言う)は、MOSトランジスタM2の出力特性で決定される。 [0004] characteristics of the output voltage Vo versus output current Io of the constant current circuit 1 (hereinafter, referred to as output characteristic) is determined by the output characteristic of the MOS transistor M2. MOSトランジスタM2の出力特性を図8に示した。 The output characteristics of the MOS transistor M2 shown in FIG. 図8に示すように、MOSトランジスタが飽和領域(図参照)で動作するように設計すれば、出力電圧Voに変動しにくい安定した出力電流Ioを得る事が出来る。 As shown in FIG. 8, be designed as MOS transistor operates in a saturation region (see Fig.), It is possible to obtain an output current Io that is hardly stable change in the output voltage Vo. しかし、実際、飽和領域ではチャネル長変調効果により、傾きdIo/d However, in practice, the channel length modulation effect is in the saturation region, the gradient DIO / d
Voを有している。 Has a Vo.

【0005】これは、定電流回路1に接続される外部負荷(図示せず)が変化し、出力電圧Voが変動した場合、出力電流Ioも変動してしまう事を示している。 [0005] This is because, when the external load connected to the constant current circuit 1 (not shown) is changed, the output voltage Vo is varied, shows that the output current Io also varies. この問題を解消するため、カレントミラー回路を積み重ねたカスコード定電流回路(図9(1)参照)や、出力側にトランジスタを挿入したウィルソン型定電流回路(図9(2)参照)等が考案されている。 To solve this problem, it cascode constant current circuit stacked current mirror circuit (Fig. 9 (1) refer) and, like Wilson type constant current circuit inserted transistor (see FIG. 9 (2)) is designed on the output side It is.

【0006】次に、図10に、図9(1)に示されるカスコード定電流回路の出力特性を示した。 [0006] Next, in FIG. 10, showing the output characteristic of the cascode constant current circuit shown in FIG. 9 (1). 図10に示されるように、飽和領域における特性の傾きが緩和され、 As shown in FIG. 10, the slope of the characteristic in the saturation region is relaxed,
平坦になっている事が解る。 It can be seen that the flat.

【0007】しかし、出力特性における飽和領域の傾きが平坦になる一方で、定電流源として使用できる飽和領域S1は、従来使用されていた飽和領域S2よりも狭くなってしまう。 However, while the slope of the saturation region of the output characteristic becomes flat, saturation region S1, which can be used as a constant current source, becomes smaller than the saturation region S2 which has been conventionally used.

【0008】また、出力側にトランジスタを直列に接続するため、出力電圧Voのダイナミックレンジが制約され、また、大電流においては消費電力が大きくなってしまっていた。 [0008] In order to connect the transistor in series with the output side, it is restricted dynamic range of the output voltage Vo, also, in the large current incorrectly increases power consumption.

【0009】 [0009]

【発明が解決しようとする課題】外部負荷の変動によるカレントミラー回路の出力電流の変動を抑えるため、カレントミラー回路の出力側にトランジスタを直列に接続していた。 To suppress the fluctuation of the output current of the current mirror circuit according to variation in the external load [0005], was connected to the transistor in series with the output side of the current mirror circuit. しかしながら、定電流源として使用できる飽和領域が狭くなってしまったり、出力電圧が上昇し消費電力が増大すると言う問題があった。 However, or have become narrower saturation region can be used as a constant current source, the output voltage there is a problem that the increased power consumption is increased.

【0010】そこで、本発明は、以上の様な問題を鑑み、定電流回路の出力端子に接続される外部負荷が変化しても、出力電流が変動しない定電流駆動回路を提供すると共に、電圧の低い飽和領域においても安定した定電流を提供し、かつ、出力電圧を低く設定できる定電流駆動回路を提供する事を目的とする。 [0010] Therefore, the present invention has been made in view of the above such problems, even if the external load connected to the output terminal of the constant current circuit is changed to provide a constant current drive circuit output current does not vary, voltage also it provides a stable constant current in the low saturation region, and an object to provide a constant current driving circuit can be set low output voltage.

【0011】 [0011]

【課題を解決するための手段】以上の問題を解決するために、本発明は、カレントミラー回路を構成する二つの一電導チャネル型MISトランジスタの内、ドレイン端子とゲート端子とが短絡した方(入力側)のMISトランジスタにおいて、この定電流駆動回路の出力端子から出力される出力信号に連動し、所定の動作をする可変抵抗器を、この入力側のMISトランジスタのドレイン端子とゲート端子との間に接続する。 In order to solve the above problems SUMMARY OF THE INVENTION The present invention, among the two single conductivity channel type MIS transistors constituting the current mirror circuit, Write a drain terminal and a gate terminal are short-circuited ( in MIS transistor on the input side), in conjunction with the output signal from the output terminal of the constant current driving circuit, a variable resistor for a predetermined operation, the drain terminal and the gate terminal of the MIS transistor of the input side connected between.

【0012】ここで、出力信号に連動した所定の動作とは、出力信号が所定の電位よりも低くなったときはこの可変抵抗器の抵抗値が増加し、所定の電位よりも高くなったときには可変抵抗器の抵抗値が減少する動作の事を言う。 [0012] Here, the predetermined operation interlocked with the output signal, when the output signal is when it becomes lower than the predetermined potential increased resistance value of the variable resistor, becomes higher than a predetermined potential resistance value of the variable resistor say that behavior to decrease.

【0013】以上のように、本発明によれば、本発明の定電流駆動回路は出力電圧の変動に連動した可変抵抗器が内蔵されているので、定電流駆動回路の出力端子に接続された外部負荷が変化し、定電流駆動回路の出力電圧が変動しても、その変動を補償する事が出来る。 [0013] As described above, according to the present invention, the constant current driving circuit of the present invention, since the variable resistor interlocked with the variation of the output voltage is built, which is connected to the output terminal of the constant current driving circuit external load changes, even if the output voltage of the constant current driving circuit is varied, it is possible to compensate for the variations.

【0014】この為、定電流回路の出力端子に接続される外部負荷が変化しても、出力電流が変動しない定電流駆動回路を提供する事が出来る。 [0014] Therefore, even if the external load connected to the output terminal of the constant current circuit is changed, it is possible to provide a constant current drive circuit output current does not vary. また、従来の定電流回路の様に出力側にトランジスタを直列に接続する事が無いので、本発明の定電流駆動回路は、電圧の低い飽和領域においても安定した定電流を提供する事が出来、かつ、出力側に直列に接続したトランジスタの存在による出力電圧の上昇に伴った定電流駆動回路の消費電力の増大を抑制した定電流駆動回路を提供する事が出来る。 Further, since it is not connecting the transistor in series with the output side as in the conventional constant current circuit, constant-current driving circuit of the present invention, it is possible to provide a stable constant current even at low saturation region Voltage and, it is possible to provide a constant current drive circuit which suppresses increase in power consumption of the constant current driving circuit with a rise in the output voltage due to the presence of transistors connected in series to the output side.

【0015】 [0015]

【発明の実施の形態】本発明の実施形態を図を用いて詳細に説明する。 It will be described in detail with reference to the drawings an embodiment of the embodiment of the present invention. 図1は本発明の概念回路図を、図2は図1の詳細回路図を示している。 Figure 1 is a conceptual circuit diagram of the present invention, FIG 2 shows a detailed circuit diagram of FIG. 図1に示される様に、本発明に係る定電流駆動回路190は、二つのNチャンネルMISトランジスタ(特に、以下NMOSトランジスタと言う)NT1、NT2から構成されたカレントミラー回路100と、このカレントミラー回路100に定電流を供給するための定電流源Iと、出力端子OUTから出力された信号のレベルを変換するレベルシフト手段と、NMOSトランジスタNT2のドレイン端子N1と接点N2の間に接続され、レベルシフト手段から変換された信号に依存して抵抗値が変化する可変抵抗器Rとから構成される。 As shown in FIG. 1, a constant current drive circuit 190 according to the present invention, two N-channel MIS transistor (especially, hereinafter referred NMOS transistor) NT1, a current mirror circuit 100 constructed from NT2, the current mirror a constant current source I for supplying a constant current to the circuit 100, a level shift means for converting the level of a signal output from the output terminal OUT, and is connected between the drain terminal N1 and the node N2 of the NMOS transistor NT2, composed of a variable resistor R whose resistance value depending on the converted signal from the level shift means is changed.

【0016】次に、図1に示した回路の詳細回路図を図2に示した。 Next, it showed detailed circuit diagram of the circuit shown in FIG. 1 in FIG. 図2に示されるように、可変抵抗器はNM As shown in FIG. 2, the variable resistor NM
OSトランジスタNT3で、レベルシフト手段は二段に接続された反転増幅回路110及び120で構成される。 In OS transistor NT3, the level shift means is composed of the inverting amplifier circuit 110 and 120 are connected in two stages.

【0017】次に、この回路の動作を説明する。 [0017] Next, the operation of this circuit. 図2中の出力端子OUTに接続されたNMOSトランジスタN NMOS transistor N connected to the output terminal OUT in FIG. 2
T1の出力特性を図3に、NMOSトランジスタNT2 The output characteristics of T1 in FIG. 3, NMOS transistor NT2
の出力特性を図4に示した。 It showed the output characteristic in FIG.

【0018】今、この定電流駆動回路190に含まれるNMOSトランジスタNT1が動作点A(図3参照)で動作し、かつ、NMOSトランジスタNT2が動作点C [0018] Now, this operates in the constant current driving circuit NMOS transistor NT1 operating point contained in the 190 A (see FIG. 3), and, the NMOS transistor NT2 operating point C
(図4参照)で動作していると仮定する。 Assume operating in (see FIG. 4).

【0019】この時、出力端子OUTに接続される負荷(図示せず)が変化した場合、定電流駆動回路190の出力電圧Voutが△V1だけ、出力電流Ioutが△ [0019] At this time, if the load connected to the output terminal OUT (not shown) is changed, the output voltage Vout of the constant current driving circuit 190 only △ V1, the output current Iout △
I1だけ減少(図3における動作点B)したとする。 Reduced by I1 and the (operating point B in FIG. 3).

【0020】この出力電圧の減少により、接点N3の電圧VN3は△VN3だけ減少する。 [0020] due to a decrease in the output voltage, voltage VN3 of the node N3 is decreased by △ VN3. この為、NMOSトランジスタNT3のON抵抗を増加させ、接点N1の電位VN1は△V2だけ減少する。 Therefore, to increase the ON resistance of the NMOS transistor NT3, potential VN1 of the node N1 is decreased by △ V2.

【0021】また、接点N1に流れる電流IN1は、定電流源Iにより決定され、一定であるので、NMOSトランジスタNT2の動作点はC点からD点に移動する(図4参照)。 [0021] The current IN1 flowing through the node N1 is determined by the constant current source I, since it is constant, the operating point of the NMOS transistor NT2 is moved from point C to point D (see FIG. 4).

【0022】この為、ゲート電圧はVG1からVG2に増加し、接点N4の電位を増加させるので、NMOSトランジスタNT1のドレイン電流、ドレイン電圧すなわち出力電流Ioutを増加させる。 [0022] Therefore, the gate voltage is increased to VG2 from VG1, because it increases the potential of the contact N4, the drain current of the NMOS transistor NT1, increasing the drain voltage or the output current Iout.

【0023】また、出力電圧Voutが増加した場合、 [0023] In addition, if the output voltage Vout is increased,
上記とは逆に、レベルシフト手段により接点N3の電位は増加し、NMOSトランジスタNT1のON抵抗は減少する。 Contrary to the above, increasing the potential of the node N3 by the level shift means, ON resistance of the NMOS transistor NT1 is reduced. この為、接点N1の電位は増加し、接点N4の電位は減少する。 For this reason, the potential of the contact N1 is increased, the potential of the contact N4 is reduced. この結果、出力電流Ioutを減少する。 As a result, to reduce the output current Iout.

【0024】この定電圧駆動回路190において、NM [0024] In the constant voltage driver circuit 190, NM
OSトランジスタNT1は、出力電圧Voutが増加した場合に抵抗値が減少し、出力電圧Voutが減少した場合に抵抗値が増加する可変抵抗器として作用している。 OS transistor NT1, the resistance value decreases when the output voltage Vout increases, the output voltage Vout is acting as a variable resistor whose resistance value increases when reduced.

【0025】また、レベルシフト手段は、出力電圧Vo [0025] In addition, the level shift means, the output voltage Vo
utをNMOSトランジスタNT1のゲート端子に印加するのに適した電圧レベルにシフトさせる作用を有している。 It has the effect of shifting the ut to a voltage level suitable for application to the gate terminal of the NMOS transistor NT1.

【0026】以上の様にして、出力電圧Voutが増加もしくは減少した場合、出力電圧Voutに連動した可変抵抗器(NMOSトランジスタNT3)を接点N1とN2の間に接続する事により、出力電圧Vout(出力電流Iout)の変動を補償する事が出来る。 [0026] In the above manner, when the output voltage Vout is increased or decreased, by connecting a variable resistor in conjunction with the output voltage Vout to (NMOS transistor NT3) between nodes N1 and N2, the output voltage Vout ( possible to compensate for variations in the output current Iout) can be.

【0027】また、次に、出力電圧Vout(出力電流Iout)を補償した場合のVout対Iout特性を図5に示した。 Further, then, it showed Vout vs. Iout characteristics when compensating for the output voltage Vout (the output current Iout) in FIG. ただし、定電圧源VD1及びVD2を共に3.236Vとし、抵抗R10、R11、R12、R However, a constant voltage source VD1 and VD2 both a 3.236V, resistors R10, R11, R12, R
13をそれぞれ13.039KΩ、0.372KΩ、1 13 each 13.039KΩ, 0.372KΩ, 1
0KΩ、10KΩとした。 0KΩ, was 10KΩ.

【0028】また、図6は、出力電圧Voutの変動を補償した場合C1と、補償しない場合(すなわち、レベルシフト手段とNMOSトランジスタNT1を使用しない場合)C2のVout対Iout特性を比較したものである。 [0028] FIG. 6 is a C1 case of compensating for variations in the output voltage Vout, if not compensated (i.e., when not using the level shift means and the NMOS transistor NT1) a comparison of Vout versus Iout characteristics of C2 is there.

【0029】図5及び図6からかわるように、本発明に係る定電流駆動回路は、可変抵抗器とレベルシフト手段とを用いて、出力電圧Voutが変動しても一定の電流を出力する事が出来る。 [0029] As alternative from FIGS. 5 and 6, a constant current drive circuit according to the present invention, by using the variable resistor and the level shift means, that the output voltage Vout is output a constant current be varied It can be.

【0030】この為、従来技術のように出力側にトランジスタを直列に接続する必要がないので、出力側の電位が上昇し、消費電力が上昇する事は無い。 [0030] For this reason, since there is no need to connect a transistor in series with the output side, as in the prior art, it is not the potential of the output side is increased, power consumption is increased. また、図6からわかるように、飽和領域の広範囲に渡って定電流が得られているので、電位の低い飽和領域においても安定した定電流を供給する事が出来る。 Moreover, as can be seen from FIG. 6, the constant current over a wide range of the saturation region is obtained, it is possible also to supply a stable constant current in the low saturation region potential.

【0031】また、本実施形態では、カレントミラーを構成するMOSトランジスタにNMOSトランジスタを、可変抵抗器にNMOSトランジスタを使用しているが、その逆、すなわちカレントミラーを構成するMOS Further, in the present embodiment, MOS the NMOS transistor in a MOS transistor constituting a current mirror, the use of the NMOS transistors in the variable resistor, which constitute the reverse, i.e. a current mirror
トランジスタにPMOSトランジスタを、可変抵抗器にPMOSトランジスタを使用してもよい。 The PMOS transistor in the transistor may be used PMOS transistors to the variable resistor.

【0032】 [0032]

【発明の効果】本発明によれば、本発明の定電流駆動回路は出力電圧の変動に連動した可変抵抗器が内蔵されているので、定電流駆動回路の出力端子に接続された外部負荷が変化し、定電流駆動回路の出力電圧が変動しても、その変動を補償する事が出来、安定した出力電流及び出力電圧を供給する事が出来る。 According to the present invention, since the constant current driving circuit of the present invention is a variable resistor is incorporated in conjunction to the variation of the output voltage, an external load connected to the output terminal of the constant current driving circuit changes, be varied the output voltage of the constant current driving circuit, it is possible to compensate for the variation, it is possible to supply a stable output current and output voltage.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明に係る定電流駆動回路の概念回路図を示したものである。 [1] shows a conceptual circuit diagram of a constant current driving circuit according to the present invention.

【図2】本発明に係る定電流駆動回路の詳細回路図を示したものである。 [2] shows a detailed circuit diagram of a constant current driving circuit according to the present invention.

【図3】本発明に係る定電流駆動回路の出力特性を示したものである。 [3] shows the output characteristic of the constant current driving circuit according to the present invention.

【図4】本発明に係る定電流駆動回路の接点N1における電圧対電流特性をを示したものである。 4 is a voltage-current characteristic at the node N1 of the constant current driving circuit according to the present invention shows the.

【図5】本発明に係る定電流駆動回路の出力特性をグラフ化したものである。 [5] The output characteristic of the constant current driving circuit according to the present invention is obtained by graphing.

【図6】本発明にかかる定電流駆動回路の出力特性と従来にかかる定電流駆動回路の出力特性を比較した図である。 6 is a graph comparing the output characteristic of the output characteristic and the constant current drive circuit according to the conventional constant-current driving circuit according to the present invention.

【図7】従来技術にかかる定電流駆動回路である。 7 is a constant current drive circuit according to the prior art.

【図8】従来技術にかかる定電流駆動回路の出力特性を示したものである。 8 shows the output characteristic of the constant current driving circuit according to the prior art.

【図9】従来技術にかかる定電流駆動回路の出力特性を補償する回路図を示したものである。 9 shows a circuit diagram for compensating the output characteristics of the constant current driving circuit according to the prior art.

【図10】従来技術にかかる定電流駆動回路の出力特性を補償する回路の出力特性をを示したものである。 [10] shows the output characteristics of the circuit for compensating the output characteristics of the constant current driving circuit according to the prior art.

【符号の説明】 DESCRIPTION OF SYMBOLS

NT1、NT2 NMOSトランジスタ R 可変抵抗器 I 定電流源 110、120 反転増幅回路 190 定電流駆動回路 NT1, NT2 NMOS transistor R variable resistor I constant current source 110 and 120 inverting amplifier circuit 190 constant-current driver

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl. 6識別記号 庁内整理番号 FI 技術表示箇所 H03F 3/343 H03F 3/343 A ────────────────────────────────────────────────── ─── front page continued (51) Int.Cl. 6 identification symbol Agency Docket No. FI art display portion H03F 3/343 H03F 3/343 a

Claims (5)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 ゲート端子とドレイン端子が接続されている接点を有する第一のMISトランジスタと前記MI [Claim 1] A first MIS transistor having a contact gate terminal and the drain terminal is connected the MI
    Sトランジスタと同じチャンネル導電型を有する第二のMISトランジスタとから構成されるカレントミラー回路に於いて、 前記接点と、前記接点に接続されたドレイン端子の間に接続され、出力信号に連動した所定の信号により抵抗値が変動する可変抵抗器を有する事を特徴とする定電流駆動回路。 In and a second MIS transistor having the same channel conductivity type as S transistor in the current mirror circuit formed, predetermined for the contact point, is connected between a drain terminal connected to the contact, interlocked with the output signal constant current drive circuit having a resistance value, characterized in that it has a variable resistor which varies with the signal.
  2. 【請求項2】 ゲート端子とドレイン端子が接続されている接点を有する第一のMISトランジスタと前記MI Wherein said a first MIS transistor having a contact gate terminal and the drain terminal is connected MI
    Sトランジスタと同じチャンネル導電型を有する第二のMISトランジスタとから構成されるカレントミラー回路と、前記第二のMISトランジスタのドレイン端子に接続された出力端子とを有する半導体集積回路に於いて、 前記接点と、前記接点に接続されたドレイン端子の間に接続され、前記出力端子から出力された出力信号が所定の電位よりも高い電位になった時に抵抗値が減少し、出力信号が所定の電位よりも低い電位になった時に抵抗値が増加する可変抵抗器とを有する事により、前記出力端子の電位の変動を補償する事を可能にした定電流駆動回路。 In a semiconductor integrated circuit having a current mirror circuit comprised of a second MIS transistor having the same channel conductivity type as S transistor, and an output terminal connected to the drain terminal of the second MIS transistor, wherein contact and is connected between a drain terminal connected to the contact, the resistance value decreases when the output signal outputted from the output terminal becomes a higher potential than the predetermined potential, the output signal is a predetermined potential constant current driving circuit in which the resistance value is by having a variable resistor to increase, it possible to compensate for variations in potential of the output terminal when it becomes a potential lower than.
  3. 【請求項3】 ゲート端子とドレイン端子が接続されている接点を有する第一のMISトランジスと、前記第一のMISトランジスタと同じチャネル導電型を有する第二のMISトランジスタとから構成されるカレントミラー回路において、 前記第二のMISトランジスタのドレイン端子に接続された出力端子と、 前記接点と、前記接点に接続されたドレイン端子の間に接続され、前記出力端子から出力された出力信号が所定の値よりも高くなった時に前記第一のMIS型トランジスタのゲート端子の電位を減少させ、出力信号が所定の値よりも低くなった時に前記第一のMISトランジスタのゲート端子の電位を上昇させる為の電位制御手段とを有する事を特徴とする定電流駆動回路。 A current mirror composed of a first MIS transistor having a 3. A contact gate terminal and the drain terminal is connected, a second MIS transistor having the same channel conductivity type as said first MIS transistor in the circuit, an output terminal connected to the drain terminal of the second MIS transistor, and the contact is connected between a drain terminal connected to the contact, the output signal outputted from the output terminal of a predetermined reduce the potential of the gate terminal of said first MIS transistor when it becomes higher than the value, for raising the potential of the gate terminal of said first MIS transistor when the output signal is lower than a predetermined value constant current driving circuit, characterized in that it has a potential control means.
  4. 【請求項4】 ゲート端子とドレイン端子が接続されている接点を有する第一のMISトランジスと、 前記第一のMISトランジスタと同じチャネル導電型を有する第二のMISトランジスタと、 前記接点に接続された定電流源と、 前記第一及び第二のMISトランジスタのソース端子に接続された電源電圧端子と、 前記第二のMISトランジスタのドレイン端子に接続された出力端子と、 前記接点と、前記第一のMISトランジスタのドレイン端子との間に接続され、前記第一及び第二のMISトランジスタと同じチャネル導電型を有する第三のMISトランジスタと、 前記第三のMISトランジスタと前記出力端子の間に接続され、前記出力端子から出力された出力信号が所定の電位よりも高い電位になった時に前記第三のMISトラ A first MIS transistor having a wherein contact gate terminal and the drain terminal is connected, and a second MIS transistor having the same channel conductivity type as said first MIS transistor being connected to the contact and a constant current source, said first and second sources connected to power supply voltage terminal pin of the MIS transistor, and an output terminal connected to the drain terminal of the second MIS transistor, and the contact, the first It is connected between the drain terminal of one MIS transistor, and a third MIS transistor having the same channel conductivity type as said first and second MIS transistors, between the output terminal and the third MIS transistor is connected, said third MIS tiger when the output signal outputted from the output terminal becomes a higher potential than the predetermined potential ンジスタのON抵抗の値を減少させ、出力信号が所定の電位よりも低い電位になった時に前記第三のMISトランジスタのON抵抗の値を増加させる為のON抵抗制御手段とを有する事を特徴とする定電流駆動回路。 Decreasing the value of the ON resistance of Njisuta, wherein the output signal to have a and ON resistance control means for increasing the value of the ON resistance of said third MIS transistor turns ON when the potential lower than the predetermined potential constant current driving circuit to.
  5. 【請求項5】 前記ON抵抗制御手段が非反転増幅回路である事を特徴とする請求項3記載の定電流駆動回路。 5. The constant current driving circuit according to claim 3, wherein a said ON resistance control means is a non-inverting amplifier circuit.
JP13302996A 1996-05-28 1996-05-28 Constant current driving circuit Pending JPH09319323A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13302996A JPH09319323A (en) 1996-05-28 1996-05-28 Constant current driving circuit

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Application Number Priority Date Filing Date Title
JP13302996A JPH09319323A (en) 1996-05-28 1996-05-28 Constant current driving circuit

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JPH09319323A true true JPH09319323A (en) 1997-12-12

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JPWO2004097543A1 (en) * 2003-04-25 2006-07-13 株式会社半導体エネルギー研究所 Semiconductor device
US7091938B2 (en) 2002-03-26 2006-08-15 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2006221241A (en) * 2005-02-08 2006-08-24 Denso Corp Reference voltage circuit
US7102161B2 (en) 2001-10-09 2006-09-05 Semiconductor Energy Laboratory Co., Ltd. Switching element, display device using the switching element, and light emitting device
US7145379B2 (en) 2003-07-29 2006-12-05 Matsushita Electric Industrial Co., Ltd. Current driver and display device
KR100675318B1 (en) * 2000-12-23 2007-01-26 엘지.필립스 엘시디 주식회사 Driving Circuit For Electro Luminescence Panel
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US7265495B2 (en) 2002-12-19 2007-09-04 Matsushita Electric Industrial Co., Ltd. Display driver
US7477094B2 (en) 2003-05-12 2009-01-13 Panasonic Corporation Current driving device and display device
US7489310B2 (en) 2001-08-02 2009-02-10 Seiko Epson Corporation Supply of a programming current to a pixel
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US7561147B2 (en) 2003-05-07 2009-07-14 Toshiba Matsushita Display Technology Co., Ltd. Current output type of semiconductor circuit, source driver for display drive, display device, and current output method
US7576574B2 (en) 2007-03-14 2009-08-18 Ricoh Company, Ltd. Constant current circuit and light emitting diode drive circuit
US7629611B2 (en) 2001-11-09 2009-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, electronic device
US7679353B2 (en) 2007-01-18 2010-03-16 Ricoh Company, Ltd. Constant-current circuit and light-emitting diode drive device therewith
US7817149B2 (en) 2002-04-26 2010-10-19 Toshiba Matsushita Display Technology Co., Ltd. Semiconductor circuits for driving current-driven display and display
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US8575999B2 (en) 2009-07-07 2013-11-05 Fujitsu Limited Constant current circuit and semiconductor integrated circuit
CN103455072A (en) * 2012-06-05 2013-12-18 国民技术股份有限公司 Adaptive bias circuit and voltage stabilizing circuit
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US9223334B2 (en) 2010-06-29 2015-12-29 Ricoh Company, Ltd. Constant current circuit and light emitting diode driving device using the same
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KR100675318B1 (en) * 2000-12-23 2007-01-26 엘지.필립스 엘시디 주식회사 Driving Circuit For Electro Luminescence Panel
JP2003005710A (en) * 2001-06-25 2003-01-08 Nec Corp Current driving circuit and image display device
US7489310B2 (en) 2001-08-02 2009-02-10 Seiko Epson Corporation Supply of a programming current to a pixel
US7102161B2 (en) 2001-10-09 2006-09-05 Semiconductor Energy Laboratory Co., Ltd. Switching element, display device using the switching element, and light emitting device
US9117913B2 (en) 2001-11-09 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, electric circuit, display device and light-emitting device
US7629611B2 (en) 2001-11-09 2009-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, electronic device
US7091938B2 (en) 2002-03-26 2006-08-15 Semiconductor Energy Laboratory Co., Ltd. Display device
US7817149B2 (en) 2002-04-26 2010-10-19 Toshiba Matsushita Display Technology Co., Ltd. Semiconductor circuits for driving current-driven display and display
WO2003091977A1 (en) * 2002-04-26 2003-11-06 Toshiba Matsushita Display Technology Co., Ltd. Driver circuit of el display panel
US7265495B2 (en) 2002-12-19 2007-09-04 Matsushita Electric Industrial Co., Ltd. Display driver
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JPWO2004097543A1 (en) * 2003-04-25 2006-07-13 株式会社半導体エネルギー研究所 Semiconductor device
KR101045242B1 (en) * 2003-04-30 2011-06-30 소니 주식회사 Display Apparatus
US7561147B2 (en) 2003-05-07 2009-07-14 Toshiba Matsushita Display Technology Co., Ltd. Current output type of semiconductor circuit, source driver for display drive, display device, and current output method
US7477094B2 (en) 2003-05-12 2009-01-13 Panasonic Corporation Current driving device and display device
US7649528B2 (en) 2003-07-29 2010-01-19 Panasonic Corporation Display device comprising display driver having display driving section formed between transistors providing electric current thereto
US7145379B2 (en) 2003-07-29 2006-12-05 Matsushita Electric Industrial Co., Ltd. Current driver and display device
JP2006221241A (en) * 2005-02-08 2006-08-24 Denso Corp Reference voltage circuit
US7679353B2 (en) 2007-01-18 2010-03-16 Ricoh Company, Ltd. Constant-current circuit and light-emitting diode drive device therewith
US7576574B2 (en) 2007-03-14 2009-08-18 Ricoh Company, Ltd. Constant current circuit and light emitting diode drive circuit
JP2009038747A (en) * 2007-08-03 2009-02-19 Sharp Corp Driving circuit
US8575999B2 (en) 2009-07-07 2013-11-05 Fujitsu Limited Constant current circuit and semiconductor integrated circuit
JP2011150561A (en) * 2010-01-22 2011-08-04 Rohm Co Ltd Semiconductor integrated circuit, differential amplifier using the same, and buffer amplifier
US9223334B2 (en) 2010-06-29 2015-12-29 Ricoh Company, Ltd. Constant current circuit and light emitting diode driving device using the same
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