JPH09311566A - Thermal fixing device and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve wear resistance and sliding property by forming a film having two independent amorphous structures comprising a carbon network structure stabilized with hydrogen and a silicon network structure stabilized with oxygen on a heat generating resistor or on an insulating protective film of a heater. SOLUTION: The film having two independent amorphous structures comprising a carbon network structure stabilized with hydrogen and a silicon network structure stabilized with oxygen is formed on a heat generating resistor 3 or on an insulating protective film 6 of a heater 1. The heater 1 is fixed and held by a heater supporting part with a heat insulating heater holder 8. A heat-resistant film 10 is rotated or travelled by a driving member or pressure roller 11 at a specified speed in the direction shown as an arrow in the figure while the film touches the edge part of the holder and slides on the heater 1 in contact with the heater 1. By applying a current on the heat generating resistor 2, the temp. of the heater 1 is raised to a specified value.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heater used in an image forming apparatus such as a copying machine or a laser beam printer, and more particularly to a heater used for heat fixing an unfixed image.

[0002]

2. Description of the Related Art In recent years, Japanese Unexamined Patent Publication No. 63-313182 proposes a heating device using a fixed heater and a thin film that slides with this heater.

A schematic view of such a heater is shown in FIGS.
Shown in The heater 1 is formed of an elongated ceramic substrate 2 having electrical insulation, heat resistance, and low heat capacity, and a linear strip along the substrate length at the center of the ceramic substrate 2 on one surface side (front surface side) in the substrate width direction. The heating resistor 3, the electrode terminals (connection terminals) 4 and 5 formed on the substrate surface by electrically connecting both ends of the heating resistor 3, and the ceramic substrate 2
1. An insulating protective layer 6 made of glass or the like as a heater surface protective layer covering the surface for forming the current-generating heating resistor, and a temperature detecting element 7 such as a thermistor provided on the other surface side (back surface side) of the ceramic substrate 2 . The ceramic substrate 2 is, for example, Al ₂ having a width of 10 mm, a thickness of 1 mm, and a length of 240 mm.
It is a ceramic plate such as O ₃ , AlN, or SiC. The heating resistor 3 is, for example, a pattern layer having a thickness of 10 μm and a width of 1 mm, which is formed by baking Ag / Pd (silver-palladium alloy), RuO ₂ , and Ta ₂ N coated by screen printing or the like in the atmosphere. The electrode terminals (connection terminals) 4 and 5 are pattern layers formed by normally baking Ag having a thickness of 10 μm and applied by screen printing or the like to the atmosphere.
Normally, a wire is connected via a connector (not shown) to supply power.

In the heater 1, in order to control and control the temperature of the fixing surface, the heating resistor 3 is provided in the center of the width region of the fixing nip portion 15 (coupling nip portion, pressure portion) in the cross section of the apparatus. It has a structure to be located. The insulating protective layer 6 side of the heater 1 is the film contact sliding surface side. The heater 1 is heated by a voltage applied from the AC power source 12 between the electrode terminals 4 and 5 of the heating resistor 3 and the heating resistor 3 generates heat.

The temperature of the heater 1 is detected by the temperature detecting element 7 on the back surface of the substrate, and the detected information is used as the energization control circuit 13.
The heater 1 is temperature-controlled to a predetermined temperature by feeding back to the heating resistor 3 by being fed back to the heating resistor 3. The temperature detecting element 7 of the heater 1 is the fixing surface having the best thermal response, that is, the substrate rear side partial position corresponding to the position where the heating resistor 3 is formed on the heater substrate surface side (the substrate rear face immediately below the heating resistor 3). (Side portion position).

[0006]

In order to fix an unfixed image, heat of the heater is transferred through the insulating protective layer on the heater and the film contact sliding surface to fix the image. However, when the contact sliding distance reaches about 60 km, the film is abraded due to the abrasion during the sliding contact between the insulating protective layer and the film. The abrasion powder generated at this time adheres unevenly to the roller that drives the film, so that the driving speed of the film becomes irregular, and as a result, the unfixed image is not fixed uniformly.
The glassy layer used for the insulating protective film is formed by printing and baking low softening point glass. It is considered that the abrasion of the film occurs due to the difference in surface shape (coefficient of friction) and the difference in hardness between the glassy layer and the film. Therefore, in order to prevent wear of the endless belt made of polyimide or the like, or the heat-resistant film in the form of a long web, a filler is mixed in the polyimide film for the purpose of reducing the friction coefficient with the vitreous insulating protective layer. , Teflon coating, etc. are applied. However, the abrasion of the fixing film due to the sliding of the fixing film and the heater has not been solved yet.

Further, it is necessary that the heating resistor of the heater has excellent high temperature stability and chemical resistance. However, the Ag / Pd (silver-palladium alloy) resistor coated by screen printing or the like diffuses into the insulating protective layer during firing when forming an insulating protective layer made of glass or the like, and lowers the insulating property. There was a problem of letting it. Further, since the process of forming the heating resistor layer has a limitation in controlling the film thickness, it is difficult to make the heating resistor layer thin and the film quality thereof is unstable.

As described above, at present, it is not possible to cope with the higher speed of fixing and the increase of the fixing volume by the heat fixing method, and it is necessary to make the life (contact sliding distance) of the heater as long as possible. There is.

[0009]

SUMMARY OF THE INVENTION The present invention has two independent amorphous structures, a hydrogen-stabilized carbon network structure and an oxygen-stabilized silicon network structure, on a heating resistor of a heater or an insulating protective film. The above problem is solved by forming a film having a structure.

That is, according to the present invention, in a heat fixing heater used in an image forming apparatus by heat fixing, a hydrogen-stabilized carbon network is formed on an insulating protective film or a heating resistor of a heater which is in sliding contact with a film. The present invention provides a heat fixing device in which a film composed of two independent amorphous structures of a structure and a silicon network structure stabilized by oxygen is formed. In the heat fixing device of the present invention, it is preferable that a metal element or ceramics is present in the film, and further, in a heat fixing heater used in an image forming apparatus by heat fixing, a heating resistor of a heater that slides in contact with a film. Consists of two independent amorphous structures, a hydrogen-stabilized carbon network structure and an oxygen-stabilized silicon network structure, and contains a metal element so that the volume resistivity is less than 10 ^-3 Ωcm. It is preferable.

The present invention further provides a method for manufacturing the above heat fixing device.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail. The lubricating protective film according to the present invention has a double structure of a hydrogen-stabilized carbon network a- (C: H) and an oxygen-stabilized silicon network a- (Si: O). The a- (C: H) structure and the a- (Si: O) structure exist independently of each other, and no C-Si bond or the like exists. Since this film has a small internal stress, it has good adhesion to the substrate, excellent chemical stability against acids and alkalis, hardness of 2000 kg / mm ² , and a friction coefficient in air of 0.03 to. It has a feature of being as small as 0.1 and having excellent wear resistance.

As a method for forming this film, plasma CV is used.
It is formed by a combined method of the ion beam such as the D method and the ion beam sputtering method or the ion beam vapor deposition method. As the plasma CVD method, DC-plasma CVD method, R
F-plasma CVD method, microwave plasma CVD method,
ECR-plasma CVD method, photo CVD method, laser CV
D method and the like.

As the gas used for forming the film, hydrocarbons such as methane, ethane, propane, ethylene, benzene and acetyl which are carbon-containing gases; halogenated hydrocarbons such as methylene chloride, carbon tetrachloride, chloroform and trichloroethane. Alcohols such as methyl alcohol and ethyl alcohol; ketones such as (CH ₃ ) ₂ CO and (C ₆ H ₅ ) ₂ CO; gases such as CO and CO ₂ ; SiH ₄ and Si ₂ H
₆ , SiCl ₄ , TEOS (Si (OC ₂ H ₂ ) ₄ ),
_{C 2 H 5 Si (OC 2} H 5) 3, Si (OC 3 H 7)
₄ , (C ₃ H ₇ ) ₃ SiH, SiHCl ₃ , SiH ₂ C
_{l 2, SiF 4, SiF 6} , SiI 4 , etc. of gas, and N _2, H ₂ in these _{gases, O 2, H 2 O,} Ar, include a mixture of gases such as He. Examples of the solid Si source include high-purity Si, SiO, and SiO ₂ . Further, as a metal element to be doped, Fe which is a transition metal,
Co, Ni, Ru, Rh, Pd, Os, Ir, Pt and 1B (Cu, Ag, Au), IIB (Zn), II of the periodic table
IB (Al, Ga, In) is Si, B, Al, which is a raw material of the ceramics to be doped, and IVA group (T
i, Zr, Hf), VA group (V, Nb, Ta), VIA group (Cr, Mo, W) metals or their carbides, nitrides, borides, and the like.

Conventionally, as a material for protecting lubrication,
Hard diamond-like carbon film (hereinafter abbreviated as DLC) or hydrogenated amorphous carbon film (hereinafter a-)
C: H) is known. DLC or aC: H
Has an amorphous structure containing H in the film and has sp ³ bonds and sp ² bonds, but the internal stress was large and there was a problem with the adhesion to the substrate. In particular, the adhesion to glass as an insulating material is low, and it has been difficult to form a thick film in order to improve wear resistance.

On the other hand, the film of the present invention has a high hardness and a low friction coefficient as described above, and at the same time, has a small internal stress and thus has a good adhesion to the substrate, and is a glass material as an insulating material. Adhesion with the substrate is also good. Therefore, the wear resistance can be improved by increasing the film thickness.
Furthermore, if the film is doped with a metal element or ceramics,
Randomly dispersed in the film, third network,
Alternatively, it can be present as a bulk and the dopant can increase the structural stability. In addition,
If the metal content is 50 atm% or less, no carbide is generated. In particular, the volume resistivity can be changed to 10 ¹³ to 10 ^-4 Ωcm depending on the doping amount of the metal element. Therefore,
By controlling the doping amount of the metal element, it is possible to continuously form an insulating layer also serving as lubrication protection from the heating resistor layer. Unlike the DLC and aC: H, the film of the present invention does not change the friction coefficient with humidity.

The film structure of the present invention was confirmed by ESCA, wide area absorption fine structure analysis (EXAFS), chemical etching method and the like. The film thickness is 200 nm to 10 μm
The thickness may be about the same, and 500 nm to 2 μm is particularly preferable. If the film thickness is too thin, sufficient abrasion resistance cannot be obtained, and if the film thickness is too thick, it takes time to form the film, leading to an increase in cost.

On the other hand, when the film of the present invention is used as a heating resistor, it is necessary to control the doping amount of the metal element to be doped. The electric resistance required for the heating resistor of the heater is several Ω to several tens Ω. For example, a resistance of several tens Ω is 2μ
m ⁻⁴ to obtain a heating resistor layer of 10 ⁻⁴ Ωcm
The volume resistivity may be of the order. FIG. 3 shows the relationship between the Ti addition amount and the volume resistivity when the film of the present invention is doped with Ti. Therefore, it is understood that Ti should be added at 45 atm% or more in order to obtain the volume resistivity on the order of 10 ⁻⁴ Ωcm. The thickness of the heating resistor layer of the heater may be in the range of 100 nm to 10 μm, and in particular, several 100 nm to several μm is preferable. Film thickness is 100 nm
When it is thinner, there is a problem in current resistance, and when it exceeds 10 μm, there is a problem that the manufacturing time required for forming a thick film becomes longer, and the thickness of the lubricating insulating layer formed on the heating resistor layer becomes thicker. .

According to the present invention, a film having two independent amorphous structures, that is, a hydrogen-stabilized carbon network structure and an oxygen-stabilized silicon network structure is formed on a heating resistor of a heater or an insulating protective film. By doing so, the abrasion resistance between the heater and the film and the sliding property are improved, and a long-life heater is realized. At the same time, by adding a metal element to the film of the present invention, it is possible to continuously and consistently manufacture the heating resistor layer to the lubricating insulating protective layer with the same film material.

[0020]

Embodiments of the present invention will be described below with reference to the drawings.

Embodiment 1 FIG. 4 is a partially enlarged sectional view of a heat fixing device using a heater according to an embodiment of the present invention. The heater 1 is fixedly supported by the heater supporting portion via a heat insulating heater holder 8. Reference numeral 10 denotes an endless belt-shaped or long web-shaped heat-resistant film such as polyimide having a thickness of about 40 μm, and 11 denotes a pressure roller that rotates as a pressure member that presses this film against the heater 1.
The heat-resistant film 10 is brought into contact with the edge of the heater holder 8 in a direction of an arrow at a predetermined speed by a driving member (not shown) or the rotational force of the pressure roller 11 while being in close contact with the heater 1 surface. Rotate or run while rolling on one side of the heater. By energizing the heating resistor 3 of the heater 1 to raise the temperature of the heater 1 to a predetermined temperature, and the heat-resistant film 10 is moved and driven, the recording material 16 is used as a heated material in the fixing nip portion 15 as an unfixed toner image. By introducing the surface with the heat-resistant film 10 side, the recording material 16 is brought into close contact with the heat-resistant film 10 surface and moves through the fixing nip portion 15 together with the heat-resistant film 10,
In the process of moving and passing, the heater 1 to the heat resistant film 10
Thermal energy is applied to the recording material 16 via the recording material 16 to heat and fuse the unfixed toner image 17 on the recording material 16.

FIG. 5 is a schematic sectional view of the heater portion showing the first embodiment. In the figure, 1 is a heater, 2 is a ceramic substrate, 3 is a heating resistor made of Ag / Pd, and 4 and 5 are C.
u is an electrode terminal, 6 is a glassy insulating protective layer, 8 is a heater holder, 12 is an electrode tab, 19 is a brazing material made of AuSi, 14 is a wire, and 18 is a lubricating protective film formed with the film of the present invention. is there.

In the heater of this embodiment, the Al ₂
A paste made of Ag / Pd was applied on the O ₃ substrate by screen printing so as to form the heating resistor 3, and baked in the atmosphere. After measuring the resistance value, trimming was performed to obtain a desired resistance value. Next, a Cu paste was applied by screen printing, and the electrode terminals 4 and 5 were fired and formed while paying attention to the oxygen partial pressure. After that, a lead silicate-based low softening point glass was applied as an insulating protective film by screen printing and fired in the atmosphere to form the film.

Next, the brazing material 19 made of AuSi is used to form the electrode tab 12 made of a copper alloy and the ceramic substrate 2.
And brazed. Subsequently, the wire 14 was pressed against the electrode tab 12 to bond the heater 1 to the heater holder 8. By flash-plating Au on the surfaces of the electrode terminals 4 and 5 when the heater holder 8 was manufactured, the wettability of the brazing material during brazing was improved and stable connection reliability could be obtained. As the electrode tab material for the AC power source, a metal such as Kovar, 42 alloy, or phosphor bronze can be used in addition to the copper alloy. The brazing material has a melting point of 250 ° C.
The above is preferable, and AuGe, A in addition to AuSi
uSu or the like can be used. Further, for the purpose of preventing surface oxidation and contamination before brazing on the surface of the Cu electrode terminal portion, by forming Au, Ni, Au / Ni by flash plating or the like, more stable brazing can be realized. At this time, the purpose of forming the Ni layer is to Cu in the brazing material.
Is to prevent excessive diffusion.

FIG. 6 is a schematic view of a film forming apparatus used for forming the film of the present invention on a glassy insulating protective layer.
In the figure, 25 is a vacuum chamber, 26 is a heater, 27 is an ion source,
28 is an ionization chamber, 29 is an extraction electrode, 30 is a gas introduction system, 31 is a microwave power supply, 32 is a waveguide, 33 is a gas introduction system, 34 is a microwave introduction window, 35 is an external magnetic field,
36 is a cavity resonator type ECR plasma generation chamber;
, A sputtering target; and 38, an exhaust system. First,
After exhausting the inside of the apparatus to 1 × 10 ⁻⁶ Torr, Ar: 20 sccm was introduced into the ion source from the gas supply system 30, and the gas pressure was set to 2 × 10 ⁻⁴ Torr. Next, the ionization chamber 28
Ar plasma is formed on the substrate and the extraction electrode 29 causes 50
An Ar ion beam of 0 eV was extracted to clean the surface of the insulating protective layer for 3 minutes. After that, CH ₄ : 15 sccm, H ₂ : 30 s in the gas supply system 30 of the ion source 27.
While introducing ccm, O ₂ : 40 sccm and Ar: 25 s from the gas introduction system 33 to the ECR plasma generation chamber 36.
Ccm was introduced and the gas pressure was set to 4.5 × 10 ⁻⁴ Torr. An ion beam having an ion energy of 800 eV was extracted by the extraction electrode 29 of the ion source 27 and was irradiated onto the insulating protective layer. At the same time, a microwave of 1.5 kW was introduced from the microwave power source 31 of 2.45 GHz to form oxygen ECR plasma, and the Si sputter target 37 having a purity of 99.99% was irradiated. At this time, the external electromagnet 35 provided on the outer periphery of the plasma chamber 36 formed a divergent magnetic field at an ECR point of 2000 Gauss in the microwave introduction window 34 and 875 Gauss in the sputter target 37. A hydrogen-stabilized carbon network a- (C: H) structure is formed by the ion source 27, and E
A film of a silicon network a- (Si: O) structure stabilized with oxygen by a CR plasma sputtering device
nm formed. At this time, the mold base material was at room temperature. When the film of the present invention prepared in the same manner was first ashed by oxygen plasma, only a network having an a- (Si: O) structure remained, and conversely, etching with a 10% HF solution resulted in a-
Only the network of (C: H) structure remained. ESCA
As a result of the depth direction analysis by, in the film of the present invention,
No C-Si bond was observed. The hardness of this film was measured with a thin film hardness tester, and as a result, converted into Vickers hardness of 2000.
It was kg / mm ² . In addition, the friction characteristics were evaluated by the pin-on-disk method. The measurement was carried out in air, and a bearing steel (SUJ2) sphere (diameter 5 mm) was used as the pin, with a load of 2.2 N and a sliding speed of 0.04 m / s. As a result, the friction coefficient was 0.08. . At this time, the moving speed of the film was 1 m / min. , Deposition rate is 0.5 nm / s
ec. And

The heat-fixing device obtained as described above does not generate abrasion powder of the film even when friction between the heater and the film and sliding, and can maintain stable sliding performance for a long period of time. did it.

Example 2 After the heating resistor layer was formed in the same manner as in Example 1, the film of the present invention was formed as an insulating protective layer. FIG.
It is a cross-sectional schematic diagram of the heater part which shows an Example. In the figure, 1 is a heater, 2 is a ceramic substrate, 3 is a heating resistor made of Ag / Pd, 4 and 5 are electrode terminals made of Cu, and 6 '.
Is an insulating protective layer made of the film of the present invention, and 8 is a heater holder. FIG. 8 is a schematic view of a film forming apparatus used for forming the film of the present invention as a lubricating insulating protective layer on a heating resistor. After the heating resistor layer was cleaned with Ar ions in the same manner as in Example 1, CH ₄ and H ₂ were introduced into the ion source from the gas supply system under the same conditions as in Example 1. Furthermore, the vacuum tank 4
O ₂ : 45 sccm and Ar: 20 sccm were introduced into 2 and the chamber internal pressure was set to 3.5 × 10 ⁻⁴ Torr. In the opposite target type sputtering apparatus of FIG. 8, a Si sputtering target 39 having a purity of 99.99% is used.
Then, a voltage of 600 V was applied to sputter Si on the heating resistor layer. A film of a carbon network a- (C: H) structure stabilized by hydrogen by the ion source 27 and a silicon network a- (Si: O) structure stabilized by oxygen by a facing target type sputtering apparatus. With a thickness of 5 μm. The film hardness of the sample prepared in the same manner was measured with a thin film hardness meter, and the result was 2000 kg / mm ² in terms of Vickers hardness. Also, pin on
Friction characteristics were evaluated by the disk method. The measurement is performed in air with a relative humidity of 60%, and bearing steel (SUJ
The friction coefficient was 0.1 as a result of using the sphere of 2) (diameter 5 mm) and applying a load of 2.2 N and a sliding speed of 0.04 m / s. Also, the result of measuring the volume resistivity is 2 × 10 ⁹ Ω
In cm, sufficient insulation was obtained.

Using the heat-fixing device equipped with the heater obtained as described above, the recording material was heat-fixed in the same manner as in Example 1. As a result, the same stable fixing and durability as in Example 1 were obtained. Was obtained.

Example 3 In the same manner as in Example 1, the film of the present invention was formed on the glassy insulating protective layer. The film of the present invention was formed on the upper surface of the insulating protective layer by the film forming apparatus shown in FIG. In the figure, 43 is a vacuum chamber, 44
Is a heater, 45 is an electron gun, 46 is an RF coil, 47 is a DC bias power supply, 48 is a high frequency power supply for ion plating, and 49 is an exhaust port. First, from the gas inlet A
After r: 30 sccm was introduced into the ionization chamber for ionization, a voltage of 450 V was applied to the ion beam extraction grid to extract the ion beam and irradiate the insulating protective layer for 5 minutes to clean the molding surface. Next, CH ₄ : 15sc
cm, Ar: 20 sccm is introduced into the ionization chamber to form a hydrogen-stabilized carbon network a- (C: H) structure at a gas pressure of 2.8 × 10 ⁻⁴ Torr, and at the same time, the electron gun 45 forms 99. Binary deposition of 99% Si and 99.9% Ti was performed. At this time, the film formation rate on the Si side is 100 nm.
/ Min, the film formation rate on the Ti side was 20 nm / min. When depositing Si and Ti, O ₂ : 80 scc
m, N _2: 70 sccm was introduced into the vacuum chamber and is introduced to 1kW of power by the high frequency power source, the substrate -7
A bias voltage of 00 V was applied and the ion source was simultaneously operated while performing so-called ion plating. As a result, the oxygen-stabilized silicon network a- (Si: O) structure by the electron gun and the a- (C:
A film containing TiCN was formed to a thickness of 800 nm in the H) structure film. When the content of TiCN of the sample prepared under the same conditions was examined by ESCA, it was 18 at%. Further, the film hardness and the friction coefficient were evaluated in the same manner as in Example 1, and the results were 2200 kg / mm ² and 0.11.

Using the heat fixing device equipped with the heater thus obtained, the recording material was heat-fixed in the same manner as in Example 1, and as a result, the same stable fixing and durability as in Example 1 were obtained. Was obtained.

Example 4 A heating resistor layer was formed on the substrate of Example 1 using the film forming apparatus shown in FIG. FIG. 10 is a schematic cross-sectional view of the heater part showing the fourth embodiment. In the figure, 1 is a heater, 2 is a ceramic substrate, 3'is a heating resistor made of a metal-doped film of the present invention, 4 and 5 are electrode terminals made of Cu, 6'is an insulating protective layer made of the film of the present invention, 8 is a heater holder. After cleaning the substrate surface in the same manner as in Example 3, the ion source 27 and the electron gun 45 used 99.99% Si and 99.
9% Ti was binary vapor deposited. At this time, the film formation rate on the Si side is 100 nm / min, and the film formation rate on the Ti side is 50 nm.
/ Min. The thickness of the heating resistor layer was 2 μm.
At the time of vapor deposition of Si and Ti, O ₂ : 100 sccm was introduced into the vacuum chamber, 1 kW of power was introduced by a high frequency power source, and a bias voltage of −700 V was applied to the substrate at the same time while performing so-called ion plating. Operated the ion source. A sample prepared in the same way is EP
As a result of MA analysis, the Ti content in the film was 45.
At at%, the volume resistivity was 1 × 10 ⁻⁴ Ωcm. Next, stop the vapor deposition of Ti, only vapor deposit Si,
Hydrogen-stabilized carbon network a- (C: H) structure and oxygen-stabilized silicon network a- (S
An insulating protective layer having an i: O) structure was formed to a thickness of 4 μm. Similarly,
Metal elements W, Fe, C other than Ti as the heating resistor layer
A heater doped with o, Ni, Cu, Al, Au or the like was produced. The additive ratio of the additive metal is W: 50 at%, F
e: 42 at%, Co: 40 at%, Ni: 40 at
%, Cu: 35 at%, Al: 38 at%, Au: 35
It was set to at%.

Using the heat fixing device equipped with the eight kinds of heaters obtained as described above, the heat fixing of the recording material was performed in the same manner as in Example 1, and as a result, the stable fixing as in Example 1 was obtained. Durability was obtained.

[0033]

As described above, according to the present invention, two independent carbon network structures, hydrogen-stabilized carbon network structure and oxygen-stabilized silicon network structure, are formed on the heating resistor of the heater or the insulating protective film. By forming a film having an amorphous structure, it is possible to improve wear resistance and flutterability between the heater and the film and realize a long-life heater. At the same time, by adding a metal element to the film of the present invention, it is possible to continuously and consistently manufacture the heating resistor layer to the lubricating insulating protective layer with the same film material.

According to the heater of the present invention, a heater having excellent reliability and durability, which maintains stable sliding characteristics without causing abrasion of the film against contact and sliding generated between the heater and the film. Can be provided. As a result, the fixing speed can be increased, the fixing size can be increased, and the running cost can be reduced.

[Brief description of drawings]

FIG. 1 is a plan view of a heater according to the present invention.

FIG. 2 is a plan view of a heater according to the present invention.

FIG. 3 is a diagram showing a relationship between an additive metal concentration and a volume resistivity according to the present invention.

FIG. 4 is a sectional view of a heat fixing device using a heater according to an embodiment of the present invention.

FIG. 5 is a partial cross-sectional view of a heater according to an embodiment of the present invention.

FIG. 6 is a schematic diagram of a film forming apparatus used for forming a film in an example of the present invention.

FIG. 7 is a cross-sectional view of a heat fixing device using a heater according to an embodiment of the present invention.

FIG. 8 is a schematic view of a film forming apparatus used for film formation in an example of the present invention.

FIG. 9 is a schematic view of a film forming apparatus used for film formation in an example of the present invention.

FIG. 10 is a sectional view of a heat fixing device using a heater according to an embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Heater 2 Ceramics substrate 3 Heating resistor 3'Heating resistor made of the film of the present invention 4 Electrode terminal 5 Electrode terminal 6 Insulation protection layer 6'Insulation protection layer made of the film of the present invention 7 Temperature detection element 8 Heater holder 9 Back heat insulation layer 10 Heat Resistant Film 11 Pressure Roller 12 Electrode Tab 13 Energization Control Circuit 14 Wire 15 Fixing Nip Area 16 Recording Material 17 Unfixed Toner Image 18 Lubrication Protective Film 19 of the Invention 19 Brazing Material 25 Vacuum Tank 26 Heater 27 Ion Source 28 Ionization Chamber 29 Extraction electrode 30 Gas introduction system 31 Microwave power supply 32 Waveguide 33 Gas introduction system 34 Microwave introduction window 35 External magnetic field 36 ECR plasma generation chamber 37 Sputter target 38 Evacuation system 39 Sputter target 40 Heater 41 High frequency power supply 42 Vacuum Tank 43 Vacuum tank 44 Ta 45 electron gun 46 RF coil 47 bias power supply 48 high-frequency power source 49 outlet

Claims (6)

[Claims] 1. A heat fixing heater used in an image forming apparatus by heat fixing, comprising a hydrogen-stabilized carbon network structure and oxygen on an insulating protective film of a heater which slides in contact with a film or a heating resistor. A heat fixing device characterized in that a film composed of two independent amorphous structures of a stabilized silicon network structure is formed. 2. The heat fixing device according to claim 1, wherein a metal element or a ceramic is present in the film. 3. A heat fixing heater used in an image forming apparatus using heat fixing, wherein a heating resistor of the heater which is in sliding contact with the film has a hydrogen-stabilized carbon network structure and oxygen-stabilized silicon. The heat fixing device characterized by comprising two independent amorphous structures of the above network structure and containing a metal element so that the volume resistivity is smaller than 10 ^-3 Ωcm. 4. A heat fixing heater used in an image forming apparatus using heat fixing, comprising a hydrogen-stabilized carbon network structure and oxygen on an insulating protective film or a heating resistor of a heater which is in sliding contact with a film. A method of manufacturing a heat fixing device, comprising forming a film composed of two independent amorphous structures of a stabilized silicon network structure. 5. The method of manufacturing a heat fixing device according to claim 1, wherein a metal element or a ceramic is present in the film. 6. A heat fixing heater used in an image forming apparatus using heat fixing, wherein a heating resistor of the heater which is in sliding contact with the film has a hydrogen-stabilized carbon network structure and oxygen-stabilized silicon. 2. A method of manufacturing a heat fixing device, comprising forming two independent amorphous film structures having a network structure and containing a metal element so that the volume resistivity is less than 10 ⁻³ Ωcm.