JPH0744037A - Method for regenerating heat fixing device - Google Patents

Abstract

PURPOSE:To prolong the life of the heat fixing device and to reduce its cost by regenerating a lubricating protective film consisting of a carbon film formed on a heater or film of the heat fixing device when this carbon film is partially peeled or flawed. CONSTITUTION:The carbon film (DLC film) of the heat fixing device having the lubricating protective film consisting of the carbon film on at least one of the insulating protective film on the exothermic resistor on the film of the heater sliding with the film in contact therewith is removed by ashing and thereafter the fresh carbon film is formed by an ECR plasma CVD device having, for example, a plasma chamber 20, a microwave oscillator 25, a vacuum chamber 27, etc.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heater used in an image forming apparatus such as a copying machine or a laser beam printer, and more particularly to a heater used for heat fixing an unfixed image.

[0002]

2. Description of the Related Art In recent years, Japanese Patent Laid-Open No. 63-313182 proposes a heating device using a fixed heater and a thin film that slides on the heater.

A schematic view of such a heater is shown in FIGS.
Shown in. The heater 1 is an elongated substrate 2 having electrical insulation, heat resistance, and low heat capacity, and electric heat generation formed in a straight strip shape along the length of the substrate at the central portion in the substrate width direction on one side (front side) of the substrate 2. Body 3, electrode terminals (connecting terminals) 4 and 5 formed on the surface of the substrate by electrically connecting both ends of the energization heating resistor, and a heater surface protective layer covering the surface of the substrate 2 on which the energization heating resistor is formed. And an electrically insulating protective layer 6 such as glass, and a temperature detecting element 7 such as a thermistor provided on the other surface side (back surface side) of the substrate 2. The substrate 2 is, for example, Al ₂ having a width of 10 mm, a thickness of 1 mm, and a length of 240 mm.
It is a ceramic plate such as O ₃ , AlN, or SiC. The energization heating resistor 3 has, for example, a thickness of 10 μm and a width of 1 mm,
It is a pattern layer formed by baking in air such as Ag / Pd (silver-palladium alloy), RuO ₂ or Ta ₂ N coated by screen printing. The electrode terminals (connection terminals) 4 and 5 are pattern layers formed by normally baking 10 μm thick Ag coated by screen printing or the like in the atmosphere.
Normally, a wire is connected via a connector (not shown) to supply power.

In the heater 1, in order to control and control the temperature of the fixing surface, in the cross section of the apparatus, the energizing heat generating resistor 3 is fixed to the fixing nip portion 15 (joining nip portion, pressure portion) (see FIG. 6).
The structure is located substantially in the center of the width region of the. The insulating protective layer 6 side of the heater 1 is the film contact sliding surface side. The heater 1 is provided with electrode terminals 4 at both ends of the energization heating resistor 3.
A voltage is applied from the AC power supply AC between 5 and the energization heating resistor 3 generates heat to raise the temperature.

The temperature of the heater 1 is detected by the temperature detecting element 7 on the back surface of the substrate, and the detected information is used as the energization control circuit CT.
Is fed back to the heater 1 and the heater 1 is temperature controlled to a predetermined temperature. The temperature detecting element 7 of the heater 1 has a fixing surface having the best thermal response, that is, a substrate rear surface partial position (corresponding to a position directly below the energization heating resistor 3) corresponding to the formation position of the energization heating resistor 3 on the heater substrate surface side. It is arranged at the substrate rear side partial position).

[0006]

In order to fix an unfixed image, the heat of the heater is transferred through the insulating protective layer on the heater and the film contact sliding surface to fix the image. However, the abrasion of the film becomes severe when the contact sliding distance reaches about 60 km due to abrasion at the time of sliding contact between the insulating protective layer and the film. The abrasion powder generated at this time adheres unevenly to the roller that drives the film, so that the driving speed of the film becomes irregular, and as a result, the unfixed image is not fixed uniformly. The glassy layer used for the insulating protective film is formed by printing and baking low softening point glass. It is considered that the abrasion of the film occurs due to the difference in surface shape (coefficient of friction) and the difference in hardness between the glassy layer and the film. Therefore, in order to prevent abrasion of the heat-resistant film such as polyimide, the polyimide film is mixed with a filler, or Teflon (registered trademark) coating is applied to reduce the friction coefficient with the insulating protective film. Not effective.

The present inventor has previously proposed to solve the above problems by forming a carbon film having a high hardness and a low friction coefficient on the insulating protective layer of the heater or the heating resistor, or on the film. There is. However, the usage environment,
Depending on the conditions of use, the formed carbon film may be partially peeled off or scratches may be included, so that the heating and fixing device may not be used in the subsequent fixing operation.

Therefore, the object of the present invention is to improve the durability (long life) and low cost by regenerating the lubricating protective film on the heater or the film in which the carbon film is partially peeled or damaged as described above. It is to provide a heat fixing device.

[0009]

The present invention is directed to ashing (oxidation treatment) of a carbon film having a high hardness and a low friction coefficient, which is formed as a lubrication protective film on an insulating protective film or a heating resistor of a heater or on a film. ), The carbon film is formed again, and the above-mentioned problem is solved.

The present invention will be described in detail below. The carbon film according to the present invention includes a hydrogenated amorphous carbon film (hereinafter, aC: H film), a diamond-like carbon film (hereinafter, D).
LC film) and hard carbon film. Furthermore, Ta, W, Mo,
AC: H film containing at least one element of Nb, Ti, Cr, Fe, B, Si or fluorine, D
An LC film is also included. The aC: H film and the DLC film have a thermal conductivity of 200 to 600 W / m · k, an electric resistance (volume resistivity) of 10 ⁸ to 10 ¹¹ Ωcm, and a hardness of 2000 to 5000 k.
It has physical properties represented by g / mm ² and a friction coefficient of less than 0.2. Further, the hard carbon film has a hardness of 2000 to 5000 kg / mm ² , a friction coefficient μ
<0.2, electric resistance (volume resistivity) 10 ⁵ to 10 ¹¹ Ωc
It has physical properties represented by m and the like.

A-C: H film or DL used in the present invention
C film is formed by microwave plasma CVD method, direct current plasma C
VD method, high frequency plasma CVD method, magnetic field microwave plasma CVD method, ion beam sputtering method, ion beam evaporation method, ion plating method, reactive plasma sputtering method, ion implantation method, laser plasma CVD
It is formed by the method. The raw material gas used to form the aC: H film or the DLC film is methane, which is a carbon-containing gas,
Hydrocarbons such as ethane, propane, ethylene, benzene and acetylene; halogenated hydrocarbons such as methylene chloride, carbon tetrachloride, chloroform and trichloroethane; alcohols such as methyl alcohol and ethyl alcohol; (C
H ₃ ) ₂ CO, (C ₆ H ₅ ) ₂ CO and other ketones; C
Gases such as O and CO ₂ and N ₂ , H ₂ ,
A mixture of gases such as O ₂ , H ₂ O and Ar can be used. As the solid carbon source, high-purity graphite or glassy carbon can be used. Further, Ta, W, Mo, Nb, T added to the aC: H film or the DLC film.
Elements such as i, Cr, Fe, B, and Si are added by solid metal or semiconductor, or organometallic gas containing these elements, silane gas, higher order silane gas, diborane gas, or higher order borane gas. Fluorine is the above-mentioned a
In the method of forming a C: H film or a DLC film, a fluorine-containing gas such as CF ₄ , C ₆ H _6-m (m = 0) is used as a source gas.
~ 6) and the like, a method of fluorinating the surface of the film by exposing it to a plasma of a fluorine-containing gas such as CF ₄ after forming an aC: H film and a DLC film, and a method of ion-implanting fluorine ions. Is added.

The hard carbon film is formed by a plasma sputtering method, an ion beam sputtering method, an ion beam vapor deposition method, an ion beam mixing method, an ion plating method, a cluster ion beam method, an ion implantation method, an arc discharge method,
It is formed by a laser deposition method or the like. Examples of the solid carbon source used at this time include high-purity graphite and glassy carbon. Alternatively, hydrocarbons such as methane, ethane, propane, ethylene, benzene, and acetylene, which are carbon-containing gases as a gaseous carbon source; halogenated hydrocarbons such as methylene chloride, carbon tetrachloride, chloroform, trichloroethane; methyl alcohol, ethyl alcohol, etc. Alcohols; (CH ₃ ) ₂ CO, (C ₆ H
₅ ) Ketones such as ₂ CO; When CO, CO ₂ or the like is used, it is used as a carbon ion beam after mass separation. In addition, as a raw material gas for assisted ion beam, H
e, N ₂ , H ₂ , O ₂ , H ₂ O, Ar, Ne, Kr, X
Examples of the gas include e.

The aC: H film or the DLC film contains several tens of atom% of hydrogen in the film, and the properties of the film greatly differ depending on the hydrogen content. For example, hydrogen is 50
The film containing more than atom% has a large optical band gap and is transparent and has high electric resistance, but it is a polymer-like film having low film hardness and low thermal conductivity. On the other hand, hydrogen is 10 to 45
The film containing atom% has a Vickers hardness of 2000 to 50.
Extremely hard at 00 kg / mm ^2, with an electrical resistance of 10 ⁸ Ωc
It is a film having a high thermal conductivity, a high insulation property, and a high hardness, which is larger than m, has a thermal conductivity of more than 200 W / m · k, and has a friction coefficient of less than 0.2. It is considered that these properties are derived from sp ³ bonds existing in 40 to 70% in the membrane. Therefore, what is used as the protective film of the present invention is that the hydrogen content is 10 to 45 atom%.
-C: H film or DLC film. It is difficult to clearly distinguish the aC: H film and the DLC film. Each film is macroscopically amorphous, contains hydrogen in the film, is composed of sp ² -bonded carbon and sp ³ -bonded carbon, and its physical properties are similar as described above. The DLC film referred to in the present invention has a crystal structure of diamond when viewed microscopically, for example, a diffraction pattern specified as diamond by electron beam diffraction.

The friction coefficient of the aC: H film or the DLC film is as low as μ to 0.02 in a vacuum or in a dry nitrogen atmosphere, but the friction coefficient increases as the relative humidity increases. Tends to become. The friction coefficient in the normal state is μ <0.2, but the friction coefficient deteriorates as the relative humidity increases and the contact sliding distance increases. On the other hand, Ta, W, Mo, Nb, Ti, Cr,
The a-C: H film or DLC film containing Fe, B, Si or fluorine at 30 at% or less has a constant friction coefficient regardless of humidity and contact sliding distance. It is not clear why the friction coefficient of these films is constant regardless of the environment (particularly humidity) and the usage situation (contact sliding distance), but the aC: H film and D
It is presumed that the dangling bonds existing in the LC film are terminated by the added element, so that the dangling bonds are reduced and the film becomes stable with respect to the environment and the situation of use.

The hard carbon film of the present invention is macroscopically composed of carbon having an amorphous structure and having sp ² and sp ³ bonds, and contains almost no hydrogen. Even if it is contained, its amount is less than 1 at%. The density of the hard carbon film is in a range higher than that of graphite (2.26 g / cm ³ ) and lower than that of diamond (3.51 g / cm ³ ).

The thickness of the carbon film formed on the insulating protective film of the heater or the heating resistor may be in the range of several nm to several tens of μm, and particularly preferably several tens nm to several μm. This is because when the film thickness is thinner than several nm, sufficient lubricating performance and insulating performance cannot be obtained, and when it is thicker than several tens of μm, the film easily peels from the substrate due to film stress.
When it is formed directly on the heating resistor, it is necessary to use a film having a high electric resistance capable of ensuring sufficient insulation. When formed on a film, several nm to several 100
A film thickness of nm is suitable. This is because when the film thickness is thinner than several nm, sufficient lubricating performance cannot be obtained, and when it is thicker than several 100 nm, the film peels from the film or the film curls due to the film stress. Even when the film is formed in the above-described preferable film thickness range, when the film curls, the carbon films may be formed on both surfaces of the film.

According to the present invention, when the carbon film formed on the heater or the film of the heat fixing device is worn due to contact wear at the time of fixing, the remaining carbon film is removed by oxidation treatment without impairing the state of the substrate. After that, the carbon film is formed again.

As a method of oxidation treatment, the above-mentioned aC:
A microwave plasma CVD method, a direct current plasma CVD method, a high frequency plasma CVD method, a magnetic field microwave plasma CVD method, which is a manufacturing method of an H film, a DLC film, and a hard carbon film,
An ion beam / sputtering method, an ion beam vapor deposition method, an ion plating method or the like is used. Oxygen is used as a reaction gas, oxygen plasma or oxygen ion beam is generated, and the carbon film is oxidatively removed (ashing) by irradiating or exposing the carbon film. The reaction gas is oxygen, H ₂ , N ₂ , Air,
Ar, may be mixed CF ₄ or the like. Further, after the oxidation treatment, the substrate after ashing may be etched by plasma such as H ₂ , N ₂ , Ar, CF ₄ or an ion beam. The ashing state can be known by monitoring the plasma during ashing by emission spectroscopy. This method can be used to determine the end point of ashing.

After that, the carbon film is formed again by the above-mentioned film forming method to regenerate the lubricating protective film of the heater or the film. At this time, ashing and regeneration may be continuously performed by the same apparatus, or a washing process using an organic solvent may be added after ashing.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Specific embodiments of the present invention will be described below with reference to the drawings.

<Embodiment 1> FIG. 3 is a partially enlarged sectional view of a heat fixing device using a heater according to an embodiment of the present invention.
The heater 1 is fixedly supported by a heater supporting portion 9 via a heat insulating heater holder 8. Reference numeral 10 denotes an endless belt-shaped or long web-shaped heat-resistant film such as polyimide having a thickness of about 40 μm, and 11 denotes a rotary pressure roller as a pressure member for pressing the film against the heater 1. The film 10 is brought into contact with the edge portion of the heater holder 8 at a predetermined speed in the direction of the arrow by a driving member (not shown) or by the rotational force of the pressure roller 11, and the heater 1 is in close contact with the heater 1 surface. Rotate or move while sliding on a surface. The heater 1 is heated to a predetermined temperature by energizing the energization heating resistor 3 of the heater 1, and the recording material 16 is used as a material to be heated in the fixing nip portion 15 in a state where the film 10 is moved and driven. The recording material 16 is brought into close contact with the surface of the film 10 and moves through the fixing nip portion 15 together with the film 10, and the recording material 16 is transferred from the heater 1 through the film 10 in the course of the movement. Heat energy is applied to 16 and recording material 1
The unfixed toner image 17 on 6 is heated and fused and fixed.

FIG. 4 is a schematic sectional view of the heater section showing the first embodiment. In the figure, 1 is a heater, 2 is a ceramic substrate, 3 is a heating resistor made of Ag / Pd, and 4 and 5 are C.
u is an electrode terminal portion, 6 is a vitreous insulating protective layer, 1
8 is a DLC film to which a metal element is added, 8 is a heater holder, 12 is an electrode tab, 13 is a brazing material made of AuSi,
14 is a wire.

In the heater of this embodiment, the Al ₂
A paste made of Ag / Pd was applied on the O ₃ substrate by screen printing so as to form the heating resistor 3, and baked in the atmosphere. After measuring the resistance value, trimming was performed to obtain a desired resistance value. Next, a Cu paste was applied by screen printing, and the electrode terminal portions 4 and 5 were fired and formed while paying attention to the oxygen partial pressure ((a) of FIG. 4). After that, a lead silicate-based low softening point glass was applied by screen printing as an insulating protective film and baked in the air ((b) of FIG. 4). Next, the DLC film 18 is subjected to ECR-plasma CV.
It was formed to 400 nm by the D method ((c) of FIG. 4). Figure 5
Is the ECR plasma C used to form the DLC film.
It is a schematic diagram of a VD device. In the figure, 20 is a cavity resonator type plasma chamber, 21 is a gas introduction system, 22 is a microwave introduction window, 23 is a microwave waveguide, 24 is an electromagnet, 25 is a microwave oscillator, 26 is a substrate, and 27 is a vacuum chamber. 28 are exhaust systems. Similarly, DLC containing Si at 10 at%
400 nm thick film and DLC film containing 10 at% of fluorine
Formed. The hydrogen content, Si content, fluorine content, film hardness, and friction coefficient of these DLC films were measured by HFS.
(Hydrogen Forwardscatteri
ng Spectrometry) method, EPMA method, R
BS (Rutherford Backscatter)
ing Spectrometry) method, thin film hardness tester,
It was evaluated by the pin-on-disk method. The coefficient of friction was evaluated in air with a relative humidity of 45%, and a ball (diameter 5 mm) of bearing steel (SUJ2) was used as a pin at a load of 1.2 N and a sliding speed of 0.04 m / s. The results are shown in Table 1.

[0024]

[Table 1]

Next, the brazing material 13 made of AuSi is used to form the electrode tab 12 made of a copper alloy and the ceramic substrate 2.
And were brazed ((c) of FIG. 4). Subsequently, the wire 14 was pressed against the electrode tab 12 to bond the heater 1 to the heater holder 8 ((d) and (e) of FIG. 4). In addition,
By flash plating the surface Au of the electrode terminal portions 4 and 5 when manufacturing the heater 1, the wettability of the brazing material during brazing was improved and stable connection reliability could be obtained. As the electrode tab material, a metal such as Kovar, 42 alloy, phosphor bronze or the like can be used in addition to the copper alloy. The brazing material preferably has a melting point of 250 ° C. or higher, and AuGe, AuSu or the like can be used in addition to AuSi. Further, for the purpose of preventing surface oxidation and contamination before brazing on the surface of the Cu electrode terminal portion, Au, Ni, Au / Ni are formed by flash plating or the like, whereby more stable brazing can be realized. At this time, the purpose of forming the Ni layer is to prevent excessive diffusion of Cu in the brazing material.

Using the heat-fixing device equipped with the heater manufactured as described above, unfixed images were continuously fixed on 300,000 sheets. As a result, partial peeling was observed in all the heaters. , Was reproduced as follows.

A heater was installed in the ECR-PCVD apparatus used for forming the carbon film, the vacuum chamber was evacuated to 1 × 10 ^-7 Torr, and then O ₂ : 100 sccm was introduced from the gas introduction system to a gas pressure of 3 It was set to × 10 ^-3 Torr. Subsequently, a microwave of 2.45 GHz was input at 1.0 kW to generate oxygen plasma in the plasma chamber. At this time, an ECR condition of 1500 Gauss at the introduction window and 875 Gauss at the cavity resonator exit was set by the electromagnet, and 6 at the substrate position.
An external magnetic field was formed to be 50 Gauss. In this state, the carbon film on the insulating protective layer was ashed. At this time, the end point of the ashing was determined by monitoring the temporal change in the intensity of the ultraviolet light having a wavelength of 297.7 nm, which is the light emission from the electronically excited CO in the plasma, by the plasma emission spectroscopy. The electrode portion was masked so that the electrode portion was not oxidized during the ashing.

When the ashing was completed, the heater was taken out, and the DLC film was formed again by the same method and conditions as described above. When the hydrogen content, Si content, fluorine content, film hardness, and friction coefficient of the regenerated DLC film were evaluated, the same values as before the reproduction were obtained. This heater was again installed in the heat fixing device to perform heat fixing of the recording material. As a result, the same stable fixing and durability as before reproduction were obtained. Ta, W, Mo, Nb, Ti, Cr, F other than Si
As a result of conducting the same examination for the DLC film containing e, B, the same result as the DLC film containing Si was obtained.

Example 2 Al ₂ O ₃ similar to Example 1
A groove for forming a heating resistor layer was mechanically processed on the substrate.
The shape of the groove was 350 mm × 2 mm × 12 μm. A paste of Ag / Pd was applied to this groove by screen printing so as to form the heating resistor 3 by 11 μm and baked in the air. After measuring the resistance value, trimming was performed to obtain a desired resistance value. Next, the substrate was placed in a sputtering device (not shown), and W was formed in a thickness of 1 μm on the resistor layer. W
Was formed for the purpose of preventing mutual diffusion of Ag / Pd and C. Subsequently, using an ion beam deposition apparatus (hereinafter referred to as an IBD apparatus) shown in FIG.
nm formed. In FIG. 6, 30 is a vacuum chamber, 31 is an ion beam source, 32 is an ionization chamber, 33 is a gas introduction system, 34 is an ion beam extraction electrode, 35 is a substrate, and 36 is an exhaust system. After evacuating the vacuum chamber to 1 × 10 ⁻⁷ Torr, CH ₄ : 15 ccm and H ₂ : 30 ccm were introduced from the gas introduction system, and the gas pressure was 3.0 × 10 ⁻⁴ Torr to generate plasma in the plasma chamber. . 0.8k for extraction electrode
A voltage of V was applied and an ion beam was extracted to irradiate the substrate to form an aC: H film. As a result of HFS analysis of the hydrogen content in the aC: H film, the hydrogen concentration in the film was 30 atom%. In addition, as a result of evaluating the film hardness and the friction coefficient in the same manner as in Example 1, the result was 300 each.
It was 0 kg / mm ² and 0.11.

Using the heating and fixing device equipped with the heater obtained as described above, the recording material was thermally fixed in the same manner as in Example 1. As a result, partial peeling occurred. Played back. The heater part is IB in FIG.
After being installed in the D device and evacuating the vacuum chamber to 1 × 10 ⁻⁷ Torr, O ₂ : 30 sccm was introduced from the gas introduction system to set the gas pressure to 3 × 10 ⁻⁴ Torr and generate oxygen plasma in the plasma chamber. . A voltage of 0.5 kV was applied to the extraction electrode to extract an oxygen ion beam and irradiate the carbon film on the heater with ashing. Following ashing, Ar: 30 sccm was introduced from the gas introduction system, the gas pressure was 3 × 10 ⁻⁴ Torr, and the extraction voltage was 0.5 kV.
The r ion beam was extracted, and the heating resistor layer and the ceramic substrate were etched by 5 nm. After etching,
An aC: H film was re-formed in the same manner as described above. The regenerated aC: H film had the same film quality as that before the reproduction. As a result of re-installing this heater in the heat fixing device and performing heat fixing of the recording material, stable fixing and durability similar to those before reproduction were obtained.

<Embodiment 3> S is applied to a polyimide film.
An aC: H film containing i was formed to a thickness of 25 nm. For film formation, the ECR-PCVD apparatus of FIG. 5 was used in which an extraction electrode (grid) was provided at the exit of the cavity resonator.
After evacuating the vacuum chamber to 1 × 10 ⁻⁷ Torr, C ₆ H ₆ : 30 sccm, H ₂ : 15 sccm from the gas introduction system,
SiH ₄ : 10 sccm was introduced and the gas pressure was 4.1 × 1.
After setting to 0 ⁻⁴ Torr, a microwave of 2.45 GHz was input at 1.5 kW to generate plasma in the plasma chamber. At this time, 1200 Gaus in the introduction window by the electromagnet
s, an ECR condition of 875 Gauss was set at the exit of the cavity resonator, and an external magnetic field was formed so that 650 Gauss was set at the substrate position. Furthermore, by applying a voltage of -500V to the extraction electrode (not shown) provided in the cavity resonator outlet, pull out the ion beam _{a-C 1-x Si x} : to form a H film. At this time, the range of x was 0 ≦ x ≦ 0.4. When the obtained film was evaluated in the same manner as in Example 1, the film hardness was 2500.
kg / mm ² , friction coefficient is 0.05, hydrogen concentration is 20a
Tom% and Si concentration were 15 at%.

Using the heat-fixing device equipped with the film obtained as described above, the recording material was heat-fixed in the same manner as in Example 1. As a result, partial peeling occurred, so that reproduction was performed as follows. went. ECR-
It was installed in a PCVD apparatus, the vacuum chamber was evacuated to 1 × 10 ⁻⁷ Torr, and then O ₂ : 100 sccm was introduced from the gas introduction system to set the gas pressure to 3.0 × 10 ⁻³ Torr and oxygen plasma was introduced into the plasma chamber. The film was irradiated with oxygen plasma in a state where no voltage was applied to the extraction electrode, and ashing was performed. After ashing, C from the gas introduction system
F ₄ : 30 sccm was introduced and the gas pressure was 3 × 10 ⁻⁴ To.
The film was irradiated with CF ₄ plasma at rr to perform 5 nm etching. Then, according to the method and conditions described above, a-
A C _1-x Si _x : H film was formed again. The regenerated film had the same film quality as that before the regeneration. The film was again set in the heat fixing device to thermally fix the recording material, and as a result, the same stable fixing and durability as those before the reproduction were obtained.

<Embodiment 4> In the same manner as in Embodiment 1, a hard carbon film having a thickness of 300 nm was formed as a lubricating protection film on the insulating protection layer. FIG. 7 shows D used to form a hard carbon film.
It is a schematic diagram of a C magnetron sputtering apparatus.
In the figure, 40 is a vacuum chamber, 41 is a substrate, and 42 is a purity of 99.99.
% Graphite target, 43 is gas introduction system, 4
4 is a DC power supply, and 45 is an exhaust system. 1 x 10 vacuum chamber
After exhausting to ^-7 Torr, Ar was introduced from the gas introduction system to adjust the gas pressure to 0.9 Pa. At this time, the substrate temperature is room temperature, the discharge power is 50 W, the substrate target distance is 40 m.
m. In addition, prior to film formation, 20 W at 300 W
n. The target was pre-sputtered. When the obtained film was evaluated in the same manner as in Example 1, the film hardness was 2
100 kg / mm ² , coefficient of friction 0.12, density 2.
It was 8 g / cm ³ .

Using the heat-fixing device equipped with the heater obtained as described above, the recording material was heat-fixed in the same manner as in Example 1. As a result, partial peeling occurred. Played back. The heater part was installed in the RF plasma CVD apparatus shown in FIG. In the figure, 50 is a vacuum chamber, 51 is a gas introduction system, 52 is an electrode, 53 is a substrate, 54
Is an exhaust system and 55 is an RF power source. Vacuum chamber 1 × 10 ^-7
After exhausting to Torr, O ₂ : 80s from the gas introduction system
ccm, CF ₄ : 20 sccm was introduced to adjust the gas pressure to 3.
RF plasma was formed by applying 0 kW of 1 kW from an RF power source at 0 × 10 ^-2 Torr. A heater having a hard carbon film formed thereon was exposed to this RF plasma to perform ashing. Subsequently, a hard carbon film was re-formed by the method and conditions described above. The regenerated film had the same film quality as that before the regeneration. This heater was again installed in the heat fixing device to perform heat fixing of the recording material. As a result, the same stable fixing and durability as before reproduction were obtained.

[0035]

As described above, according to the present invention, in the heat fixing heater used in the image forming apparatus by heat fixing, on the insulating protective layer or the heat generating resistor layer of the heater which comes into contact with the film and slides, or A heating and fixing device having excellent wear resistance and sliding characteristics by removing a carbon film having a high hardness and a low friction coefficient formed on a film as a lubrication protective film by an oxidation treatment and then forming the carbon film again. Can be provided over a long period of time. According to the present invention, the fixing speed can be increased, the fixing size can be increased, and the running cost can be reduced.

[Brief description of drawings]

FIG. 1 is a front side plan view of a heater according to the present invention.

FIG. 2 is a rear side plan view of the heater according to the present invention.

FIG. 3 is a sectional view of a fixing device using a heater according to an embodiment of the present invention.

FIG. 4 is a partial cross-sectional view of a heater according to an embodiment of the present invention.

FIG. 5 is an EC used for forming a DLC film in an example of the present invention.
The schematic diagram of an R plasma CVD apparatus.

FIG. 6 is a schematic diagram of an ion beam vapor deposition apparatus used for forming an aC: H film in an example of the present invention.

FIG. 7: D used for forming a hard carbon film in the example of the present invention
The schematic diagram of a C magnetron sputtering apparatus.

FIG. 8 is a schematic diagram of an RF plasma CVD apparatus used for ashing a hard carbon film in an example of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Heater 2 ... Ceramic substrate 3 ... Heating resistor 4 ... Electrode terminal part 5 ... Electrode terminal part 6 ... Insulation protective layer 7 ... Temperature measuring element 8 ... Heater holder 9 ... Back heat insulation layer 10 ... Heat resistant film 11 ... Pressurization Roller 12 ... Electrode tab 13 ... Brazing material 14 ... Wire 15 ... Fixing nip 16 ... Recording material 17 ... Unfixed toner 18 ... DLC film 20 ... Plasma chamber 21 ... Gas introduction system 22 ... Microwave introduction window 23 ... Microwave waveguide 24 ... Electromagnet 25 ... Microwave oscillator 26 ... Substrate 27 ... Vacuum tank 28 ... Exhaust system 30 ... Vacuum tank 31 ... Ion beam source 32 ... Ionization chamber 33 ... Gas introduction system 34 ... Ion beam extraction electrode 35 ... Substrate 36 ... Exhaust system 40 ... Vacuum tank 41 ... Substrate 42 ... Target 43 ... Gas introduction system 44 ... DC power supply 45 ... Exhaust system 50 ... Vacuum tank 51 ... Gas Irikei 52 ... electrode 53 ... substrate 54 ... exhaust system 54 ... RF power

Claims (3)

[Claims] 1. A heating and fixing device used in an image forming apparatus, comprising a heating resistor provided on an insulating substrate and generating heat when energized, and a film that is brought into contact with and sliding on the heating resistor. In a heat fixing device having an insulating protective film of a heater that slides in contact with a film, a heating resistor, or a lubricating protective film made of a carbon film on at least one of the films, after removing the carbon film by ashing, Method for regenerating a heat fixing device, which comprises forming a transparent carbon film. 2. The method for regenerating a heat fixing device according to claim 1, wherein the carbon film is a hydrogenated amorphous carbon film, a diamond-like carbon film, or a hard carbon film. 3. The hydrogenated amorphous carbon film and diamond-like carbon film are Ta, W, Mo, Nb, Ti, C.
2. The method of regenerating a heat fixing device according to claim 1, further comprising at least one element selected from r, Fe, B, Si and fluorine.