JPH09296272A - Gas phase reaction device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent decrease in the quality of the film product caused by a counter flow of air or the like when a nonoxide coating film is formed in a multlchamber type PCVD device, by providing the evacuating system of the reaction chamber with an evacuating pump and a pressure control valve. SOLUTION: For example, when a non-single crystal silicon film is formed on the surface of a substrate l by plasma vapor phase reaction in a multlchamber system, the substrate 1 is moved from a preparation room 10 to a first reaction chamber 101 of the device, while atmospheric pressure holding gas 23 such as hydrogen, nitrogen, etc., and a source gas such as silane gas 24 and methyl silane 25 is supplied from a doping system 50 to the reaction chamber 101. Plasma discharge is caused between a negative pole 61 and a positive pole 61 by supplying power from a high-frequency power supply 14 to form a P-type noncrystal semiconductor on the substrate 1. In this case, the evacuation system 52 of the reaction chamber 101 is provided with a turbomolecular pump 87, a vacuum pump 36 and a pressure controlling valve 72 between these pumps to control the pressure in the reaction chamber 101. Thus, oxidation of the film on the substrate by the counter flow of air from the vacuating system 52 and decrease in the quality can be prevented.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and method for producing a vapor phase reaction coating. In the present invention, when a film is formed using a reactive gas, a non-oxide film is formed by performing a gas phase reaction (hereinafter referred to as CVD) using a turbo molecular pump in an exhaust system. The present invention relates to a gas phase reaction apparatus for controlling the concentration of oxygen in the coating film to 5 × 10 ¹⁸ cm ⁻³ or less, and a method for producing a coating film using the apparatus.

In the present invention, in the production of a non-oxygen or non-oxide coating, in order to prevent backflow of the atmosphere from the exhaust system,
Oil rotary rotary pump, mechanical booster
Instead of using only a discontinuous rotary type rough vacuum pump such as a pump (hereinafter simply referred to as a rotary pump or RP), a continuous exhaust type composite molecular pump or turbo molecular pump (hereinafter simply referred to as a turbo molecular pump). Molecular pump or TP)
Is interposed between the reaction vessel and the vacuum pump to prevent backflow of the atmosphere from the exhaust system.

In forming a non-oxide film of the present invention, for example, non-single-crystal silicon, using silane (SinH _{2n + 2} n> 1) which is a reactive gas, the amount of oxygen in the film is 5 × 10 5. ¹⁸
The purpose of the present invention is to prevent the backflow of the atmosphere from the exhaust system in order to make it equal to or less than cm ^−3, preferably 1 × 10 ¹⁸ cm ⁻³ or less.

According to the present invention, the exhaust system is provided between the reaction chamber and VP through a valve for adjusting the pressure during the reaction, so that the plasma gas phase in the reaction chamber is in the pressure range of 0.05 to 10 torr. A film is formed using a reaction (referred to as PCVD), a photo CVD (referred to as Photo CVD), or a combination of these methods (hereinafter, simply referred to as a CVD method), and a pressure adjusting valve (also referred to as a control valve or a butterfly valve) is used. It is controlled. Therefore, the purpose is to form a high-quality non-oxide film by preventing the reverse flow of the oil component from the RP and the reverse flow of the atmosphere mixed with the oil when the RP rotates.

Further, according to the present invention, when evacuating the reaction vessel before carrying out the gas phase reaction, the TP and the reaction vessel can be connected by a pipe having a large diameter, and the TP can be further connected to the reaction vessel. . Therefore, the pressure inside the reaction vessel can be made 3 × 10 ⁻⁸ torr or lower (3 × 10 ⁻⁸ to 1 × 10 ⁻¹⁰ torr) using the same TP. In other words, the device of the present invention evacuates the reaction vessel to 10 ^-8 torr or less and CV
The pressure of 0.01 to 10 torr required for film formation by the method D was made possible by using the same TP, in addition to controlling the backflow of oxygen.

Further, according to the present invention, a plurality of reaction chambers are connected to each other in the plasma CVD apparatus, the formed film is used as a semiconductor, and a P-type non-single crystal semiconductor, an I-type non-single crystal semiconductor and an N-type non-single crystal semiconductor are used in each reaction chamber. By stacking single crystal semiconductors on the substrate,
The present invention relates to an apparatus and a method for manufacturing a semiconductor device forming a PIN junction.

[0007]

2. Description of the Related Art Conventionally, in a CVD apparatus such as a PCVD apparatus, since the pressure of the reaction system is as high as 0.01 to 10 torr, only RP is used for the exhaust system, etc., and TP etc. which generate a higher vacuum degree. It was completely impossible to provide.

[0008]

However, the present inventor has found that in such a PCVD apparatus, the exhaust system from the exhaust system at atmospheric pressure, which is in contact with air, has a discontinuous rotational motion when the exhaust system is only RP. It was found that the atmospheric air (especially oxygen) flows backward, and a part of the atmospheric air is mixed in the oil and re-vaporizes from here to flow back into the reaction vessel. Further, for this reason, oxygen is mixed into the film formed by the backflow. For example, when a silicon film is formed, oxygen is mixed into the film at a concentration of 3 × 10 ^{19 to} 2.5 × 10 ²⁰ cm ^-3 . .

For this reason, hydrogen or fluorine is added to such a film, so that what should be a silicon semiconductor is a lower silicon oxide.

The present invention aims to prevent such drawbacks.

Furthermore, the present invention provides TP in order to prevent such drawbacks.
And a pressure regulating valve is provided between TP and RP. That is, if the pressure regulating valve is
And the inner diameter of this valve is generally 1 to 2 inches. Therefore, even if the valve is fully opened, the conductance at the valve portion is low, and it takes a long time even if the inside of the reaction vessel is set to the background level (3 × 10 ⁻⁸ torr or less). In addition, this valve
When the diameter is as large as 10 inches, there is a disadvantage that the pressure cannot be adjusted with sufficient accuracy.

[0012]

In order to eliminate these drawbacks, the present invention uses a composite molecular pump capable of vacuuming even 0.01 to 10 torr as TP, and additionally, a pressure regulating valve is provided between TP and RP, The pressure was controlled both inside the TP and the reaction vessel.

[0013]

EXAMPLES A gas phase reactor according to the present invention will be described below by plasma CVD.
The case where a PIN junction is provided by the device is shown below.

[Embodiment 1] FIG. 1 shows an outline of the apparatus of the present invention. That is, a doping system for introducing a reactive gas
It has (50), a reaction container (51), and an exhaust system (52). The reaction container has a semiconductor layer formed as a double reaction container type having a reaction space in which an inner surface is formed of an insulator, and further includes a P-type semiconductor (system I in the drawing) and an I-type semiconductor (system III in the drawing).
) And an N-type semiconductor to form a bond on a substrate, each reaction container is separated into separate parts (system I in the drawing).
A multi-chamber type CVD apparatus, especially a PCVD apparatus, connected via I) is proposed as shown in FIG.

According to the present invention, by forming a non-single-crystal semiconductor layer to which hydrogen or a halogen element is added, a semiconductor layer having P, I and N type conductivity types having a small recombination center density is formed, and a stacking boundary thereof is formed. To form a PIN junction, and to prevent impurities from other adjacent semiconductor layers from mixing into each semiconductor layer and deteriorating the junction characteristics. The present invention relates to a plasma gas phase reaction for performing continuous production in which an interlayer insulating material is not formed by oxidizing a part of a semiconductor by touching.

Furthermore, the present invention relates to a so-called mass production method in which a large number of substrates are simultaneously increased in film growth rate in a multi-chamber plasma reaction method in which a large number of such reaction vessels are connected independently in each reaction. .

In the present invention, a substrate having a distance of 10 to 50 cm, for example, 20 cm in the electrode direction and a width of 15 to 120 cm, for example, 30 cm (15 cm × 30 cm arranged in 10 batches) was used.

In FIG. 1, a means for introducing a reactive gas (5
0), having an exhaust means (52), these are provided with a supply nozzle and an exhaust nozzle, and a pair of electrodes (61), (61 ') or (62), facing the inside of the insulating hood, (62 ') and reactive gas supply nozzles (17), (18) and exhaust nozzle (17'), (1
8 ') was installed. That is, the structures (38) and (39 ') were formed by wrapping the outside of the electrode with a hood insulator. In order to confine the reaction space between the hoods, the outer periphery was surrounded by insulators (38) and (38 ').

Although not shown, opening / closing doors were provided in front of and behind the reaction vessel, and a substrate heating means such as a halogen lamp was provided on the inner surface of the door.

In this drawing, PIN junction, PIP junction, NIN junction or PINPIN ...
Semiconductor layers of different conductivity types or different materials but different in the main component or stoichiometric ratio of the formed semiconductor are not affected (mixed) by the semiconductor layers formed in the preceding process. It is an apparatus for automatically and continuously forming multiple layers to be laminated on each other.

In the drawing, a part of a plurality of reaction systems forming a PIN junction is shown. That is, two of the three reaction systems (I,
II), a first preparatory chamber, and a buffer chamber (II) for transfer, which are examples of a multi-chamber type plasma vapor phase reactor.

The systems I, II, and III in the drawing have two reaction vessels (101) and (103) and a buffer chamber (102), and separation sections (44) and (45) are provided between the respective reaction vessels. , (46), (47).

This device has a first auxiliary chamber (10
0), and two substrates (1) each having two surfaces to be formed were inserted from the door (42) to two surfaces of the substrate holder (2). Then, insert this holder (3) into the outer frame jig (only
8), (38 ')). That is, the substrate having the surface on which the film is to be formed is in contact with the substrate holder (2) on the back side on which no film is formed, and the two substrates and the substrate holder are used as one holder (3) for 6 cm ± 0.5 cm.
It was planted in an insulating outer frame jig with a gap of m. As a result, 10 15 cm × 30 cm substrates could be simultaneously formed. Thus, the reaction space (6), (8) with a height of 55 cm, a depth of 40 cm, and a width of 40 cm is surrounded by insulators (39), (39 ') on the upper and lower sides, and the side periphery is an insulating outer frame jig (38). , (38 ') was electrically enclosed and surrounded by an insulator.

The first preparatory chamber (100) was evacuated by RP (35) through TP (86), stop valve (71). this
As the TP, a compound molecular pump TG550 manufactured by Osaka Vacuum was used. This composite molecular pump has a constant speed of 400 rps (revolutions per second) and N ₂ , SiH ₄ has an evacuation speed of 500 liters / s. Furthermore, it is possible to exhaust at 0.01 to 10 torr, and even at 10 torr, it is possible to exhaust at 10 liters / sec. Especially at 0.1 to 1 torr, which is generally used for gas phase reaction, 450 liter / sec to 4
It is possible to exhaust 40 liters / sec. The present invention is such a T
The rotation speed of P is variable. Therefore, even when the reaction vessel was at atmospheric pressure, the rotation speed of the TP was lowered to a fixed value of 100 to 200 rps, and the rotation was continued. And TP was not damaged. Therefore, the reactor is valved RP at atmospheric pressure (71)
The vacuum was able to be drawn while opening the and driving the vacuum with TP. As a result, TP prevents the backflow of oil components from RP,
It has the feature that the substrate surface is not contaminated with oil components.

After this, the pressure regulating valve (72) and the gate valve (85) are made to have the same inner diameter as the inner diameter of TP (VG150, that is, using a JIS B2290 vacuum lunge), and the gate valve (8
5) Fully opened, 3 × 10 ^-8 by TP (also using TG550)
A reaction vessel (10
A gate valve (44) (opening 35 cm × 30 cm) for separation from 1) was opened, and the substrate held by the outer frame jig (38) was transferred. For example, the substrate is moved from the preliminary chamber (100) to the first reaction vessel (101), and the substrate is moved to the first reaction vessel (101) by closing the gate valve (44).

At this time, the substrate (1) and the like held in the first reaction vessel (101) are preliminarily or simultaneously prepared in the buffer chamber (10).
2), the jig and the substrate (2) held in the buffer chamber (102) are stored in the second reaction vessel (103), and the substrate held in the second reaction vessel (103) is stored in the second reaction vessel (103). Buffer room
Although not shown in (104), the substrate and the jig in the third reaction chamber are provided with a gate valve in the second preliminary chamber on the outlet side.
(45), (46), and (47) are opened and moved. After this, the gate valve (4
4), (45), (46), (47) were closed.

The case where the P-type semiconductor layer is formed by the PCVD method in the first reaction vessel (101) of the system I is shown below.
The reaction system I (including the reaction vessel (101)) was 0.01 to 10 torr, preferably 0.01 to 1 torr, for example, 0.1 torr.

That is, with the pressure adjusting valve (72) closed, the pressure inside the reaction vessel and TP (87), (101) is particularly 0.05 to 1 torr out of 0.01 to 10 torr, and the vacuum degree is TP (87). It controls the opening and closing of the lower pressure adjustment valve (72), and
It is fulfilled as 100 rps. The reason why the rotation speed of the TP was reduced was that the pressure control of the pressure regulating valve was easily performed by reducing the compression ratio of the TP from a constant of 10 ⁷ to 10 ⁸ to 10 ² to 10 ³ . Since the present invention operates this continuous exhaust TP, it is possible to prevent, for the first time, the reverse diffusion of the polymerized oil of the RP (36) and the reverse flow of the exhaust air impregnated in the oil, particularly oxygen. did it.

The reactive gas was supplied from the system I doping system (50). That is, silane (SinH _{2n + 2} n) purified as silicide gas (24) and further filled in a stainless steel cylinder
≧ 1 Especially SiH ₄ or Si ₂ H ₆ ) Silicon fluoride (SiF ₄ or Si
F ₂₎ was used. Here, an ultra-high-purity silane (purity 99.99%, water and oxygenates of 0.1 PPM or less), which is easy to handle, was used.

In order to form SixC _1-x (0 <x <1) of the present embodiment, methylsilane (56) having a Si--C bond in advance as a carbide gas (25), that is, MMS (H Si (CH ₃ ) ₃ ) Or DMS
(Dimethylsilane (SiH ₂ (CH ₃ ) ₂ purity 99.99%) was used.

For silicon carbide (Si _x C _1-x 0 <x <1), boron as a P-type impurity was added together with silane from a cylinder (24) in which monosilane was mixed at a concentration of 0.5%. Supplied.

If necessary, hydrogen (purity 7N or more) or nitrogen (purity 7N or more) was supplied from the time (23) when the reaction chamber was brought to atmospheric pressure. Each of these reactive gases is flow meter (33)
And a valve (32), a reactive gas was supplied from a supply nozzle (17) to a reaction space (6) via a negative electrode (61) of a high frequency power supply (14).

The reactive gas was supplied into the cylindrical space (6) surrounded by the holder (38), and a film was formed on the substrate (1) constituting this space. Further, electric energy, for example, high frequency energy (13.56 MHz) (14) was applied between the negative electrode (61) and the positive electrode (61 ') to cause plasma reaction, and a reaction product was formed on the substrate.

The substrate is an infrared heater placed at 100 to 400 ° C., for example 200 ° C., before and after the reaction vessel (103) shown in FIG.
It was heated by the same means as in the above.

As the infrared heater, a near infrared halogen lamp (constant emission wavelength 1 to 3 μ) or a far infrared ceramic heater (emission wavelength 8 to 25 μ) is used, and a holder in the reaction vessel is used. 210 enclosed cylindrical space
It is set within ± 10 ° C, preferably within ± 5 ° C.

After that, as described above, the reactive gas described above was introduced into this container, and high frequency energy (14) was further supplied to 5 to 100 W, for example, 20 W to cause a plasma reaction.

Thus, the P-type semiconductor layer has B ₂ H ₆ / SiH ₄ = 0.5.
%, MS / (SiH ₄ + MS) = 20%, this reaction system I
Was formed as a thin film having an average film thickness of 30 to 300Å, for example, about 200Å. Eg = 2.15 eVσ = 1 × 10 ^{-6 to} 3 × 10 ^-5
(Ωcm) ^-1 .

The substrate is a conductor substrate (stainless steel, titanium, aluminum, other metal), semiconductor (silicon, germanium), insulator (glass, organic thin film) or composite substrate (glass or translucent organic resin). A transparent conductive film, such as tin oxide to which fluorine is added, a conductive film of ITO or the like is formed as a single layer or a two-layer film in which SnO ₂ is formed on ITO is used. In this example, a composite substrate was used.

Thus, the plasma vapor phase reaction was carried out for 1 to 5 minutes to form a silicon carbide film to which boron was added as a P-type impurity in a thickness of about 200 Å. Further, the gate (45) was opened on the substrate on which the first semiconductor layer was formed, and the substrate was moved to the buffer chamber (102) according to the above-described operation sequence, and the gate (45) was closed. The buffer chamber (102) is previously evacuated to 10 ^-8 torr or less, for example, 4 × 10 ^-10 torr by a cryopump (88).

Similarly to the system III, this substrate was subjected to TP (89) in a reaction container kept at 3 × 10 ^-8 torr or less to obtain a gate (4
6) It was relocated after opening and closing.

That is, in the reaction system III in FIG. 1, ultrahigh-purity monosilane or disilane (water or silicon oxide, the concentration of the oxide gas is 0.1 PPM) is used as the reactive gas of the semiconductor.
From below) (28), also for adding 10 ¹⁷ cm ^-3 or less of boron, hydrogen, a B ₂ H ₆ diluted to 0.5 ～30PPM by silane from (27), also according to the carrier gas necessary ((2
Supplied from 6).

After reacting the reactive gas in the reaction vessel, it passes through the gate valve (84) and then to the TP (89), and then the control valve (7).
4), to RP (34).

SiH ₄ 60 cc / min at a thickness of 7,000 Å, film formation speed 2.5 Å / sec, substrate (20 cm x 60 cm 20 sheets, total area 24
000 cm ² ) and the pressure was 0.1 torr. When Si ₂ H ₆ was used, the film formation rate was 28 ° / sec.

Thus, the P-type semiconductor layer was formed in the first reaction chamber by the plasma vapor phase method, and then the I-type semiconductor layer was formed by the PCVD method to form the PI junction.

After being formed in System III to a thickness of about 7,000 Å, the substrate was subjected to the above-mentioned operation, and the next buffer chamber (1
02) and moved to the reaction chamber next to it
An N-type semiconductor layer was formed by the PCVD process.

For this N-type semiconductor layer, silane having PH ₃ / SiH ₄ = 1.0% as fossin and hydrogen as a carrier gas were supplied as SiH ₄ / H ₂ = 20% by the PCVD method, and the same as in the system I. to form a polycrystalline semiconductor layer having a microcrystalline or fibrous structure of the N-type to a thickness of about 500 Å Te, further Si _x C ₁ silicon carbide on the upper surface thereof as _{MS / (SiH 4 + MS)} = 0.2 _-x (0
It is formed by laminating N-type semiconductor layers represented by <x <1) to a thickness of 10 to 200 mm, for example, a thickness of 50 mm. Other reactors are the same as in system I.

After this step, PI is placed outside the second preliminary chamber.
An ITO having a thickness of 100 to 1500 mm is further formed on the substrate formed by forming the N junction and a reflective or sublimable metal electrode such as an aluminum electrode is formed thereon to a thickness of about 1 μm by a vacuum evaporation method. (ITO + SnO ₂ ) surface electrode ─ (PI
N semiconductor) ─ (backside electrode).

The characteristics of the photoelectric conversion device are 8 to 10%.
AM1 (100mW / cm ² ) on a 10cm x 10cm substrate with an average of 8.5%
The NEDO panel with a 40 cm x 60 cm glass substrate, which has intrinsic efficiency characteristics under the conditions of and is integrated into a hybrid type, was able to obtain 5.7% with an effective efficiency.

As a result, the open circuit voltage of one element is 0.85 to
0.9V (0.87 ± 0.02V), but short circuit current is 18 ± 2 mA
/ Cm ^2, and the FF is as large as 0.60 to 0.70, and its variation is small within the panel and within the batch. Thus, it has been found that the method of the present invention is extremely effective industrially.

FIG. 2 shows the results of measurement by SIMS (using Cameca 3F) of the concentration distribution of oxygen and carbon impurities in the semiconductor in the PIN photoelectric conversion device manufactured by the present invention and the conventional method.

The drawing shows the aluminum-ITO-back electrode (9
4), N-type semiconductor (93), I-type semiconductor (92), P-type semiconductor (9
1) shows a tin oxide translucent conductive film (90) on a substrate.

In the exhaust method of the conventional method using only the RP pump, since TP of the continuous exhaust system is not used, carbon contains a high concentration of impurities shown by the curve (95) and oxygen contains a high concentration of impurities shown by the curve (96). Was there.

Particularly, oxygen is 5 × 10 ¹⁹ to 2 × 10 ²⁰ cm ^-3
Type semiconductor (92) had. The drawing is 5 × 10 ¹⁹ cm ^-3
Of oxygen. In addition, the carbon had 5 × 10 ¹⁹ to 4 × 10 ²⁰ cm ^-3 due to the backflow of the oil component from the oil rotary pump. The drawing is for a case having 1 × 10 ²⁰ cm ⁻³ .

On the other hand, the exhaust system as shown in the present invention has a carbon concentration of 1 × 10 ^{17 to} 5 × 10 ¹⁸ cm ^-3 , and generally contains only 1 × 10 ¹⁸ cm ^-3 or less. In addition, oxygen is 5 × 10
¹⁸ cm ⁻³ or less Generally, it is 1 × 10 ¹⁸ cm ⁻³ or less, and FIG. 2 shows the case of 2 × 10 ¹⁸ cm ⁻³ .

In FIG. 2, the aluminum of the back surface electrode (94) has 3 to 6 × 10 ²⁰ cm ^-3 of oxygen. For this reason, this oxygen is used for SIMS (secondary ion analysis) (Kameka 3F
It is considered that in the measurement, the background oxygen was used, and the oxygen in the N-type semiconductor (93) was 10 ¹⁸ to 10 ²⁰ cm ⁻³ .

Oxygen in the P-type semiconductor and oxide impurities such as water are present in MS, and the starting material is purified in the same manner as silane to obtain oxygen or oxide of 0.1 PPM or less. The possibility of lowering the oxygen concentration can be estimated.

Regarding the types of semiconductors to be formed, not only Si but also other group IV Ge, Si _x C _1-x (0 <x <1), Si _x Ge
_1-x (0 <x <1), Si _x Sn _1-x (0 <x <1) Single layer or multi-layer, GaAs, GaAlAs, B
It goes without saying that it may be a non-oxygenated compound semiconductor such as P or CdS.

The present invention has shown a PCVD method in a multi-chamber system using three reaction vessels. However, this was used as one reaction vessel, where silicon nitride was converted to silane (Si
It is effective to form the film by a PCVD reaction between H ₄ or Si ₂ H ₆ ) and ammonia (NH ₃ ).

Further, one reaction of the present invention, for example, the reaction of the system I is carried out by the photo-CVD method by mixing MS and Si ₂ H ₆ with B ₂ H _6, and at the same time, the TP and the pressure adjusting valve of the present invention are exhausted. It is effective to use in a system.

Further, in the present invention, one reaction vessel is used and TiCl 2 is used.
₄ and PCVD reaction with SiH _4, MoCl _5, WF ₅ or Ti by reaction thereof with _{silicide, TiSi 2, Mo, MoSi 2} , W, equally effective in the production of non-oxygenates coating such as WSi ₂ is there.

In the present invention, the separating portion may be formed by omitting the system II and merely using a gate valve.

It goes without saying that the plasma CVD apparatus of the present invention can be applied to a single chamber or multi-chamber system having another structure.

The embodiment of the present invention is the multi-chamber system shown in FIG. 1, and the PCVD method is supplied to all the reaction vessels. However, if necessary, a part or all of the composite coating may be formed by using an optical CVD method that does not use plasma, an LT CVD method (also called a HOMO CVD method), or a low pressure CVD method.

[0064]

According to the present invention, the exhaust system is provided with TP, reaction chamber and VP.
By interposing a valve for adjusting the pressure during the reaction between and, the inside of the reaction chamber has a pressure range of 0.05 to 10 torr.
The film is formed using the CVD method and controlled by the pressure adjusting valve. Therefore, a high-quality non-oxide film can be formed by preventing the backflow of the oil component from the RP and the backflow of the atmosphere mixed with the oil when the RP rotates.

Further, according to the present invention, when the reaction vessel is evacuated before performing the gas phase reaction, the TP and the reaction vessel can be connected by a pipe having a large diameter, and the TP can be further connected to the reaction vessel. . Therefore, the pressure inside the reaction vessel can be made 3 × 10 ⁻⁸ torr or lower (3 × 10 ⁻⁸ to 1 × 10 ⁻¹⁰ torr) using the same TP. In other words, the device of the present invention evacuates the reaction vessel to 10 ^-8 torr or less and CV
The pressure of 0.01 to 10 torr required for film formation by the method D was made possible by using the same TP, in addition to controlling the backflow of oxygen.

[Brief description of drawings]

FIG. 1 is a diagram showing an outline of an apparatus for producing a film for plasma vapor phase reaction for carrying out the present invention.

FIG. 2 is a diagram showing distribution of impurities in a semiconductor device manufactured by the present invention and a conventional method.

[Explanation of symbols]

1 Substrate 2 Substrate Holder 3 Holder 6, 8 Reaction Space 14 High Frequency Power Supply 17, 18 Reactant Gas Supply Nozzle 17 ', 18' Exhaust Nozzle 23 Hydrogen or Nitrogen 24 Silicide Gas, Silicon Carbide 25 Carbide Gas 26 Carrier Gas 27 B ₂ H ₆ 28 Monosilane or disilane 32 Valve 33 Flow system 34, 35, 36, 37 RP 38, 38 'Insulator 39, 39' Hood insulator 42 Door 44, 45, 46, 47 Separation part 50 Introduce reaction gas Doping system 51 Reaction vessel system 52 Exhaust system 61, 61 'Pair of electrodes 62, 62' Pair of electrodes 71 Stop valve 72, 74 Pressure adjusting valve 84, 85 Gate valve 86, 87, 89 TP 88 Cryo pump 100 First Preparatory chamber 101 First reaction vessel 102 First buffer chamber 103 Second reaction vessel 1 04 Second buffer room

Claims (1)

[Claims] 1. A vacuum pump for roughing, comprising a reaction gas introducing means and a means for evacuating an unnecessary product in a reaction vessel, and a means for evacuating the reaction vessel via a complex molecular pump or a turbo molecular pump. A gas phase reaction apparatus comprising a pressure regulating valve between the composite molecular pump or turbo molecular pump and the roughing vacuum pump.